JP2756363B2 - Adhesive element - Google Patents
Adhesive elementInfo
- Publication number
- JP2756363B2 JP2756363B2 JP2312080A JP31208090A JP2756363B2 JP 2756363 B2 JP2756363 B2 JP 2756363B2 JP 2312080 A JP2312080 A JP 2312080A JP 31208090 A JP31208090 A JP 31208090A JP 2756363 B2 JP2756363 B2 JP 2756363B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- bonding
- metal
- bonded
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Crystals, And After-Treatments Of Crystals (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Ceramic Products (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、一方の被接着部に設けた孔部に選択堆積法
によって金属単結晶を結晶成長させ、結果としてアンカ
ー効果を持たせた後、接着時、金属単結晶のフアセツト
部を他方の被接着面に押し付ける事によって塑性変形さ
せ、両者の間隙を原子間引力の作用する付近まで近づけ
て接着を可能とする常温接着に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method in which a metal single crystal is crystal-grown in a hole provided in one of the bonded portions by a selective deposition method, and as a result has an anchor effect. At the time of bonding, the present invention relates to room-temperature bonding in which a metal single crystal facet is pressed against the other surface to be bonded to cause plastic deformation, and a gap between the two is brought close to the vicinity where an atomic attractive force acts to enable bonding.
従来、常温接着に於いて高分子接着剤を用いない場
合、一般に摩擦圧接による手法が用いられており、この
摩擦圧接法の中でも特に超音波接着法は良く知られてい
る。この超音波接着は、被接着部を高い周波数で振動さ
せるので大きな加速度を伴うため、微小部材を接着する
場合、結果として接着部以外の個所を破壊し易い。そこ
で、電気的、熱的あるいは音波等を用いないで、単に静
的荷重を印加するだけで接着を可能とする常温接着法が
あるが、微小荷重印加のみで接着力を増すためには、塑
性変形能の大きな金属単結晶を用いる必要があり、か
つ、接着部分を凸型の形状にする必要があった（日本金
属学会誌；第46巻、第９号、超高真空中におけるAl単結
晶の常温圧接に及ぼす接合面での変形の影響について
（1982）P.935〜943）。すなわち、微小領域にアスペク
ト比の大きい金属単結晶を作る事は極めて困難であり、
かつ接着部分を凸型形状にする事は極めて手間の要する
作業であり、極めて困難であった。さらに最近、真空中
に於ける接合技術の応用についての研究（トライボロジ
スト；第34巻、第12号（1989）P.12〜17、真空中に於け
る摩擦現象の接合技術への応用）結果からも接着部材を
テーパ状に加工することによって、接着力の増加を確認
している。しかし、いずれの場合も、マイクロな接着素
子をテーパ状に加工する事は極めて困難である。Conventionally, when a polymer adhesive is not used in room-temperature bonding, a friction welding method is generally used, and among these friction welding methods, an ultrasonic bonding method is particularly well known. Since this ultrasonic bonding vibrates the part to be bonded at a high frequency and thus accompanies a large acceleration, when bonding a small member, as a result, parts other than the bonding part are easily broken. Therefore, there is a room temperature bonding method that enables bonding by simply applying a static load without using electrical, thermal, or sound waves.However, in order to increase the bonding force only by applying a small load, plastic bonding is required. It was necessary to use a metal single crystal having a large deformability, and it was necessary to make the bonding part a convex shape (Journal of the Japan Institute of Metals; Vol. 46, No. 9, Al single crystal in ultra-high vacuum) Of deformation at the joint surface on room temperature pressure welding of steel (1982) pp. 935-943). In other words, it is extremely difficult to make a metal single crystal with a large aspect ratio in a minute area,
In addition, it is extremely laborious and extremely difficult to make the bonding portion convex. More recently, research on application of joining technology in vacuum (Tribologist, Vol. 34, No. 12 (1989), pp. 12-17, Application of friction phenomena in vacuum to joining technology) Also, it has been confirmed that the adhesive force is increased by processing the adhesive member into a tapered shape. However, in any case, it is extremely difficult to process the micro adhesive element into a tapered shape.
従来から、常温での接着は高分子接着剤を用いない場
合、常温圧接による手法によって可能であるが、接着部
の酸化皮膜を除去し清浄表面にした後、互いに接着面同
士を突き合わせて、大きな荷重を印加する必要があっ
た。そして、この常温圧接による手法を用いる場合、平
面同士の部材を接着するためには大きな押し付け力を必
要としていた。一方、上記従来例と同様な方法で金属単
結晶同士を接着する場合、接着部材の片方を凸型の形状
にした方が、平板状の部材同士を接着する場合に比較し
て、少ない押し付け力で接着が可能となり、かつ接着力
も大きい。さらにこの接着力の大きさに大きなバラツキ
が無く、安定した接着が得られる。しかしながら、上記
従来例では出来るだけ小さな押し付け力で微小部材同士
を接着するためには、それなりに小さな形状をした金属
単結晶が必要であり、かつ金属単結晶の接着部を凸型形
状にする為の加工をする必要があった。しかし、マイク
ロマシーンを製造及び組立てる時、あるいはマイクロな
部品同士の接着によってさらに高機能の機能機素を製作
する時、極めて小さい、すなわちミクロンあるいはサブ
ミクロンオーダーの接着素子の接着部を上記同様に凸型
形状に加工する事は細かい作業であるので、極めて困難
である。さらに、極めて小さい接着素子の接着部を凸型
形状に加工する場合、金属単結晶表面の加工変質層の生
成という様な、接着に対して悪影響を及ぼす新たな要因
が出てくる場合がある。従って、従来、極めて小さいす
なわち接着部に於いてミクロンあるいはサブミクロンサ
イズの凸型形状の接着素子を製作する事は極めて困難で
あった。そこで、本発明は従来製作困難とされていたマ
イクロサイズの接着素子を提供するものである。Conventionally, bonding at room temperature can be performed by a normal pressure welding method when a polymer adhesive is not used.However, after removing the oxide film of the bonding portion to make it a clean surface, the bonding surfaces are joined to each other, It was necessary to apply a load. When using the normal temperature pressure welding method, a large pressing force is required to bond the members between the flat surfaces. On the other hand, when metal single crystals are bonded to each other in the same manner as in the above-described conventional example, it is preferable that one of the bonding members has a convex shape, compared with the case where the flat members are bonded to each other, with a smaller pressing force. And the adhesive strength is high. Further, there is no large variation in the magnitude of the adhesive force, and stable adhesion can be obtained. However, in the above-described conventional example, in order to bond the minute members to each other with as small a pressing force as possible, a metal single crystal having a relatively small shape is required, and the bonding portion of the metal single crystal is formed into a convex shape. Had to be processed. However, when manufacturing and assembling a micro machine, or when manufacturing a more advanced functional element by bonding micro parts, the bonding portion of a bonding element of an extremely small, that is, micron or submicron order bonding element is convex as described above. Processing into a mold is a very difficult task, and is extremely difficult. Further, when the bonding portion of an extremely small bonding element is processed into a convex shape, there may be a new factor that adversely affects the bonding, such as generation of a work-affected layer on the surface of the metal single crystal. Therefore, conventionally, it has been extremely difficult to manufacture an extremely small, ie, micron- or submicron-size, convex-shaped bonding element at the bonding portion. Accordingly, the present invention provides a micro-sized adhesive element which has been conventionally difficult to manufacture.
本発明によれば、撰択堆積法を用いる事により微小領
域の微小な穴の中に金属単結晶を結晶成長させ、そして
結晶成長の最終段階で形成されたフアセツト部を接着素
子として作用させることができる。すなわち、ある任意
のアスペクト比でミクロンあるいはサブミクロンの幅あ
るいは径に加工された絶縁体の穴の中で、導電性単結晶
から成る底面から撰択堆積法によって前記絶縁体に設け
られた穴の形状に沿って金属単結晶は結晶成長する。According to the present invention, a metal single crystal is crystal-grown in a minute hole of a minute region by using a selective deposition method, and a facet formed at the final stage of the crystal growth acts as an adhesive element. Can be. That is, in a hole of an insulator machined to a width or diameter of micron or submicron with an arbitrary aspect ratio, a hole provided in the insulator by selective deposition from the bottom surface made of a conductive single crystal. The metal single crystal grows along the shape.
そして、前記穴を全て埋めた状態、すなわち絶縁体表
面と結晶成長して来た金属単結晶表面との間の段差がな
くなった状態から、さらに結晶成長する過程でフアセツ
トを形成し、その後結晶成長は極めて遅くなりやがて殆
ど停止状態となる。この様に、本撰択堆積法によると金
属単結晶の結晶成長は導電性物質表面で生ずるが、絶縁
体表面では生じない。従って、絶縁体に設けた穴に沿っ
てのみ金属単結晶が結晶成長する。そして、本結晶成長
の終了段階で凸型のフアセツトが形成されるため、前記
の様に改めて凸部を作るための加工を必要としないので
便利である。すなわち、本撰択堆積法の使用により、絶
縁体に設ける穴の径あるいは幅をミクロンあるいはサブ
ミクロンに加工するならば、ミクロンあるいはサブミク
ロンの径あるいは幅をした柱状の金属単結晶及びフアセ
ツトを得る事ができる。この様に、本撰択堆積法による
と、上記フアセツトを有する金属単結晶の形状及び寸法
は、前記フアセツト部以外、殆ど絶縁体に設けられた穴
の形状及び寸法に依存する。よって、絶縁体に設ける穴
の径あるいは幅の寸法を次第に小さく加工して行くに従
って、柱状晶の金属単結晶の径あるいは幅は微小にな
り、結果として、極めて微小なすなわちマイクロマシー
ン組立て用のマイクロな接着素子を提供できる。尚、絶
縁体に穴を設ける工程は、半導体製作技術として現在用
いられているリソグラフイー及びCVD等の手法によって
可能である。Then, from the state where all the holes are filled, that is, the state in which the step between the surface of the insulator and the surface of the metal single crystal on which the crystal has grown has disappeared, a facet is formed in the process of further growing the crystal, and then the crystal is grown. Becomes extremely slow, and almost stops. As described above, according to the selective deposition method, crystal growth of the metal single crystal occurs on the surface of the conductive material, but does not occur on the surface of the insulator. Therefore, the metal single crystal grows only along the holes provided in the insulator. Then, since a convex facet is formed at the end of the main crystal growth, it is convenient because the processing for forming the convex portion is not necessary as described above. That is, if the diameter or width of the hole provided in the insulator is processed to micron or submicron by using the selective deposition method, a columnar metal single crystal and a face having a diameter or width of micron or submicron are obtained. Can do things. As described above, according to the selective deposition method, the shape and size of the metal single crystal having the above-mentioned facet mostly depend on the shape and size of the hole provided in the insulator except for the above-mentioned facet portion. Therefore, as the diameter or width of the hole provided in the insulator is gradually reduced, the diameter or width of the columnar crystal single crystal becomes smaller, and as a result, the columnar crystal single crystal becomes extremely small, that is, a micrometer for micromachine assembly. It is possible to provide a simple bonding element. The step of providing a hole in the insulator can be performed by a technique such as lithography and CVD currently used as a semiconductor manufacturing technique.
さて、本撰択堆積法によって、接着素子の両側に上記
と同様に柱状の金属単結晶を成長させた場合、この接着
素子の両側にそれぞれ異種物質の接着を可能とする。す
なわち、結果として、接着素子を介在して異種物質同士
の接着を可能とする。この場合、上記の金属単結晶とし
てAl単結晶を接着素子として用いた場合、Al単結晶はア
ルミナセラミツクス、サフアイヤ、銅、Si基板等の物質
の組合せに於いても接着が可能であった。Now, when columnar metal single crystals are grown on both sides of the adhesive element by the selective deposition method in the same manner as described above, it is possible to bond different kinds of substances to both sides of the adhesive element. That is, as a result, the dissimilar substances can be adhered to each other through the adhesive element. In this case, when the Al single crystal was used as the bonding element as the metal single crystal, the Al single crystal could be bonded even with a combination of substances such as alumina ceramics, sapphire, copper, and Si substrate.
一方、断面を短冊形状としたリング状のAl単結晶から
なる接着素子を真空封入する時のガスケツトとして使用
するならば、この接着素子はマイクロな真空槽のパツキ
ングの働きをする蓋としても利用できる。On the other hand, if an adhesive element made of a ring-shaped Al single crystal having a rectangular cross section is used as a gasket when vacuum-sealing, this adhesive element can also be used as a lid that acts as a packing for a micro vacuum chamber. .
実施例１ 第１図、第２図、第３図、第４図、第５図、第６図、
第７図、第８図、第９図は本発明の特徴を最も良く表わ
す図面である。すなわち、第１図、第２図、第３図、第
４図の１はSi単結晶からなる被接着部材、第１図、第２
図、第３図、第５図、第６図、第７図、第８図、第９図
の２−１は接着部となるフアセツトからなるAl単結晶、
第３図の２−２はAl単結晶２−１と結合しているAl単結
晶層、第１図、第２図、第３図、第４図、第５図、第６
図、第７図、第８図、第９図の３−１は絶縁体からなり
かつAl単結晶２−１を撰択堆積法により埋込む為の微小
な穴を有するSiO2層、第３図の３−２は絶縁体からなり
かつAl単結晶２−２を撰択堆積法により埋込む為の微小
な穴を有するSiO2層、第１図、第２図、第５図、第８図
の４はAl単結晶２−１を撰択堆積法によって結晶成長さ
せる為の導電体であるSi単結晶、第３図の４はAl単結晶
２−２を撰択堆積法によって結晶成長させる為の導電体
であるSi単結晶であることから前記第１、２、５、８、
図の４と同様である。第４図の２′−１は接着時の荷重
Ｐの印加によって塑性変形したAl単結晶である。Example 1 FIG. 1, FIG. 2, FIG. 3, FIG. 4, FIG. 5, FIG.
FIGS. 7, 8, and 9 are drawings that best illustrate the features of the present invention. That is, 1 in FIGS. 1, 2, 3, and 4 is a member to be bonded made of a single crystal of Si, and FIGS.
2-1 in FIG. 3, FIG. 3, FIG. 5, FIG. 6, FIG. 7, FIG. 8, and FIG.
2-2 in FIG. 3 is an Al single crystal layer bonded to the Al single crystal 2-1; FIG. 1, FIG. 2, FIG. 3, FIG. 4, FIG.
3-1 of FIG. 7, FIG. 7, FIG. 8, and FIG. 9 is an SiO 2 layer made of an insulator and having minute holes for embedding the Al single crystal 2-1 by selective deposition. FIG. 3-2 shows a SiO 2 layer made of an insulator and having minute holes for embedding the Al single crystal 2-2 by selective deposition, FIGS. 1, 2, 5 and 8; FIG. 4 shows a Si single crystal which is a conductor for crystal growth of the Al single crystal 2-1 by the selective deposition method, and FIG. 4 shows a crystal growth of the Al single crystal 2-2 by the selective deposition method. The first, second, fifth, eighth, because it is a Si single crystal which is a conductor for
It is the same as 4 in FIG. 2′-1 in FIG. 4 is an Al single crystal that has been plastically deformed by application of a load P during bonding.
尚、第１図はSi単結晶から成る被接着部材１及びフア
セツトを有する金属単結晶２−１からなる接着素子を立
体的に示したものである。この場合、第１図のＡ−Ａ矢
視図、すなわち接着部の断面形状は第２図のフアセツト
を有するAl単結晶２−１となるが、あるいは第３図の様
にフアセツトを有するAl単結晶２−１の下引層としてAl
単結晶２−２を新たに設けても良い。そして、第２図、
第３図のフアセツトを有するAl単結晶２−１、及び第３
図の下引層としてのAl単結晶層２−２の紙面に直角な断
面形状は、円形あるいは多角形でも良い。FIG. 1 shows a three-dimensional view of an adhesive element comprising a member to be bonded 1 made of a Si single crystal and a metal single crystal 2-1 having a face. In this case, the cross-sectional shape of the bonded portion is an Al single crystal 2-1 having a facet shown in FIG. 2, or an Al single crystal having a facet as shown in FIG. Al as an undercoat layer of crystal 2-1
Single crystal 2-2 may be newly provided. And FIG. 2,
An Al single crystal 2-1 having a facet shown in FIG.
The cross-sectional shape of the Al single crystal layer 2-2 as a subbing layer in the drawing, which is perpendicular to the paper surface, may be circular or polygonal.
さて、接着時、第１図、第２図、第３図に於ける被接
着素子１と２、３、４からなる接着素子は外荷重Ｐで互
いに押し付けられることによって、Al単結晶２−１のフ
アセツト部は塑性変形し、第４図の２′−１となる。こ
の塑性変形過程で前記被接着素子１と２、３、４から成
る接着素子は互いに接着する。この接着過程に於いて、
電圧印加あるいは加熱等一切加えられていない。この接
着時に印加した荷重はmgオーダーであり、極めて微小で
ある。そして接着後の引剥がし荷重はAl単結晶の破断応
力に近い値、すなわち数kg/mm2であった。尚、この接着
前に両方の接着表面、すなわち第１図、第２図、第３図
に於いて被接着素子およびフアセツトを有するAl単結晶
２−１の表面をAr+イオンシヤワーで清浄化した。By the way, at the time of bonding, the bonded elements composed of the bonded elements 1 and 2, 3, and 4 in FIGS. 1, 2 and 3 are pressed against each other by an external load P, thereby forming the Al single crystal 2-1. 4 is plastically deformed to become 2'-1 in FIG. In this plastic deformation process, the bonded elements 1 and the bonded elements composed of 2, 3, and 4 are bonded to each other. In this bonding process,
No voltage or heating was applied. The load applied during this bonding is on the order of mg and extremely small. The peeling load after bonding was a value close to the breaking stress of the Al single crystal, that is, several kg / mm 2 . Prior to this bonding, both bonding surfaces, that is, the surface of the Al single crystal 2-1 having the element to be bonded and the facet in FIGS. 1, 2 and 3 were cleaned with an Ar + ion shower. .
さて一方、第５図、第６図、第７図に見る様に、１つ
の接着素子の中に占めるフアセツトを有するAl単結晶２
−１の個数は４個、すなわち複数個でも良い。そして、
第５図に於いて、接着素子のフアセツトを有するAl単結
晶２−１の平面形状、すなわちＢ−Ｂ矢視図である第６
図、第７図に於いてフアセツトを有するAl単結晶の形状
は、円形あるいは多角形状でも良い。さらに、第８図に
見る様に、接着素子のフアセツトを有するAl単結晶２−
１は、連続した線状でも良く、そしてＣ−Ｃ矢視図であ
る第９図に於いて、接着素子のフアセツトを有するAl単
結晶２−１の紙面に直角な断面形状は、第２図のフアセ
ツトを有するAl単結晶２−１あるいは、第３図のフアセ
ツトを有するAl単結晶２−１そして下引層としてのAl単
結晶２−２を設けたものでも良い。On the other hand, as shown in FIGS. 5, 6, and 7, an Al single crystal 2 having a facet occupying in one adhesive element 2
The number of -1 may be four, that is, plural. And
In FIG. 5, there is shown a plan view of the Al single crystal 2-1 having a facet of the adhesive element, that is, a view taken in the direction of arrow BB in FIG.
In FIG. 7 and FIG. 7, the shape of the aluminum single crystal having a face may be circular or polygonal. Further, as shown in FIG. 8, the Al single crystal 2-
1 may be a continuous linear shape, and in FIG. 9 which is a view taken in the direction of arrows CC, the cross-sectional shape of the Al single crystal 2-1 having a facet of the adhesive element, which is perpendicular to the plane of FIG. Or an Al single crystal 2-1 having a facet as shown in FIG. 3 and an Al single crystal 2-2 as an undercoat layer may be provided.
実施例２ 第10図、第11図、第12図、第13図、第14図、第15図、
第16図、第17図、第18図、第19図は本発明の特徴を最も
良く表わす図面である。すなわち、第19図は本発明の立
体図であり、この立体図の断面すなわちＤ−Ｄ矢視図が
第11図であり、接着前の前記Ｄ−Ｄ矢視図が第10図であ
る。Example 2 FIG. 10, FIG. 11, FIG. 12, FIG. 13, FIG. 14, FIG.
FIG. 16, FIG. 17, FIG. 18, and FIG. 19 are drawings showing the features of the present invention best. That is, FIG. 19 is a three-dimensional view of the present invention, and a cross-sectional view of the three-dimensional view, that is, a view taken along the line DD is FIG. 11, and a view taken along the line DD before bonding is FIG.
そして、第12図、第13図、第14図、第15図、第16図、
第17図、第18図は、第10図に於いてそれぞれＥ、Ｆ、
Ｇ、Ｈ、Ｉ、Ｊ、Ｋ矢視図である。さて、第10図、第11
図、第12図、第13図、第14図、第15図、第16図、第17
図、第18図に於いて、２−１はフアセツトを有するAl単
結晶、３−１は絶縁体からなりかつAl単結晶２−１を撰
択堆積法によって埋込む為の微小な穴を有するSiO2層、
４はAl単結晶２−１を撰択堆積法によって結晶成長させ
る為の導電体であるSi単結晶、５はサフアイア、6Alは
導電膜、７はAl導電膜からなるグリツド、８はアルミナ
からなる絶縁体、９は電子放出素子である。さてこの電
子放出素子を内蔵したマイクロな真空槽の製作について
以下に説明することにする。まず、第10図に於いて、接
着に先立って予め、それぞれ接着の対をなす面、すなわ
ちサフアイア５及び導電膜６とフアセツトを有するAl単
結晶２−１の表面、そしてアルミナセラミックス８の両
表面及びアルミナセラミツクス８の両表面に相対向した
位置にある二組の接着素子のフアセツトを有するAl単結
晶２−１の各表面を真空中に於いてAr+イオンシヤワー
あるいは中性粒子で清浄化した。この後、引き続いて、
第11図に見る様に外荷重Ｐの印加によって、前記した様
な対をなす接着面は、それぞれフアセツトを有するAl単
結晶２−１の塑性変形によって接着する。この様な一連
の表面清浄化及び接着は真空中で行うので、上記の接着
後、ただちに第11図に見る様な電子放出電極を有するマ
イクロ真空槽を得る事ができた。このように、溶接、ガ
スケツト及びネジ止めによる真空シール等の手法を用い
ないで、単純に接着部を押し付けるだけの接着手法であ
る為、単純な構造を持つマイクロな真空槽の組立及び製
作が可能となった。（但し、この場合、Al導電体からな
るグリツド７とアルミナからなる絶縁体８との接着は、
前記各パーツを組み立てる前に先立って、行ったもので
ある。尚この部分の接着は２組のアルミナからなる絶縁
体８の表面にAl7を蒸着した後、Al蒸着面同士を互いに
突き合わせた状態で加熱により接着したものである。） 実施例３ 実施例１と同様な撰択堆積法をAlに代わってAuで行っ
た例である。本実施例に於いても実施例１と同様に金属
単結晶のフアセツトから成る接着素子を得ることが可能
であった。すなわち、第１図、第２図に於いて金属単結
晶２−１をAu単結晶とした場合でも、Si単結晶から成る
被接着部材１とAu単結晶２−１との間の接着が可能であ
った。さらに、被接着部材１をSi単結晶からAl2O3セラ
ミツクスに変えた場合でも、Al2O3セラミツクスから成
る被接着部材１とAu単結晶２−１との間の接着が可能で
あった。And FIG. 12, FIG. 13, FIG. 14, FIG. 15, FIG.
FIG. 17 and FIG. 18 show E, F,
It is a G, H, I, J, K arrow view. Now, Fig. 10, Fig. 11
FIG. 12, FIG. 13, FIG. 13, FIG. 14, FIG. 15, FIG. 16, FIG.
In FIG. 18 and FIG. 18, 2-1 is an aluminum single crystal having a facet, 3-1 is made of an insulator, and has minute holes for embedding the Al single crystal 2-1 by selective deposition. SiO 2 layer,
4 is an Si single crystal which is a conductor for growing the Al single crystal 2-1 by selective deposition, 5 is a sapphire, 6Al is a conductive film, 7 is a grid made of an Al conductive film, and 8 is an alumina. The insulator 9 is an electron-emitting device. Now, the manufacture of a micro vacuum chamber incorporating this electron-emitting device will be described below. First, in FIG. 10, prior to bonding, the surfaces forming the bonding pair, that is, the surface of the Al single crystal 2-1 having the sapphire 5 and the conductive film 6 and the facet, and both surfaces of the alumina ceramics 8 are formed in advance. Each surface of the Al single crystal 2-1 having two sets of adhesive element facets at positions opposing each other on both surfaces of the alumina ceramics 8 was cleaned with Ar + ion shower or neutral particles in a vacuum. . After this,
As shown in FIG. 11, when the external load P is applied, the pair of bonding surfaces as described above are bonded by plastic deformation of the Al single crystal 2-1 having a facet. Since such a series of surface cleaning and bonding are performed in a vacuum, a microvacuum tank having an electron emission electrode as shown in FIG. 11 could be obtained immediately after the above bonding. In this way, it is possible to assemble and manufacture a micro vacuum chamber with a simple structure because it is a bonding method that simply presses the bonding part without using a method such as welding, gasket and vacuum sealing by screwing. It became. (However, in this case, the adhesion between the grid 7 made of Al conductor and the insulator 8 made of alumina is
This was performed before assembling the parts. Note that the bonding of this portion is such that Al7 is vapor-deposited on the surface of the insulator 8 made of two sets of alumina, and then the aluminum-deposited surfaces are adhered to each other by heating with the Al-deposited surfaces facing each other. Example 3 Example 3 is an example in which the same selective deposition method as in Example 1 was performed using Au instead of Al. In this embodiment, as in the case of the first embodiment, it was possible to obtain an adhesive element made of a metal single crystal facet. That is, even when the metal single crystal 2-1 is an Au single crystal in FIGS. 1 and 2, the bonding between the member 1 to be bonded composed of a Si single crystal and the Au single crystal 2-1 is possible. Met. Furthermore, even when the bonded member 1 was changed from Si single crystal to Al 2 O 3 ceramics, bonding between the bonded member 1 made of Al 2 O 3 ceramics and the Au single crystal 2-1 was possible. .
実施例４ 実施例１に於いて、Si単結晶から成る被接着部材１と
Al単結晶２−１との間の接着性は、Al単結晶の低指数面
で比較した場合、｛100｝面で最も良かった。Example 4 In Example 1, a member 1 to be bonded made of a Si single crystal was used.
The adhesiveness with the Al single crystal 2-1 was best on the {100} plane when compared on the low index plane of the Al single crystal.
実施例５ 実施例１に於いて、被接着部材１をCuとした場合、Cu
から成る被接着部材１とAl単結晶２−１との間の接着が
可能であった。Example 5 In Example 1, when the member to be bonded 1 was Cu, Cu was used.
Can be bonded between the member 1 to be bonded and the Al single crystal 2-1.
第１図は本発明を実施した接着素子及び被接着板の立体
図、 第２図は第１図のＡ−Ａ断面矢視図、 第３図は第２図とは異なる形状をした接着素子の断面
図、 第４図は接着後の接着素子と被接着板の断面図、 第５図は複数の接着部を有する接着素子、 第６図は第５図のＢ−Ｂ矢視図、 第７図は第６図と同様であるが接着部の平面形状を角型
とした場合の接着素子、 第８図は接着部を連続の線状とした接着素子、 第９図は第８図のＣ−Ｃ矢視図、 第10図はマイクロ真空槽の立体図である第19図の接着前
のＤ−Ｄ断面矢視図、 第11図はマイクロ真空槽の立体図である第19図の接着後
のＤ−Ｄ断面図、 第12図は第10図のＥ矢視図、 第13図は第10図のＦ矢視図、 第14図は第10図のＧ矢視図、 第15図は第10図のＨ矢視図、 第16図は第10図のＩ矢視図、 第17図は第10図のＪ矢視図、 第18図は第10図のＫ矢視図、 第19図は本発明を実施したマイクロ真空槽の立体図であ
る。 １……Si単結晶からなる被接着部材 ２−１……フアセツトを有するAl単結晶 ２−２……Al単結晶 ３−１……絶縁体であるSiO2 ３−２……絶縁体であるSiO2 ４……導電体であるSi単結晶層 ５……サフアイアからなる被接着部材 ６……Al導電膜 ７……Al導電層から成るグリツド電極 ８……アルミナから成る絶縁体 ９……電子放出電極1 is a three-dimensional view of an adhesive element and a plate to be bonded according to the present invention, FIG. 2 is a cross-sectional view taken along the line AA of FIG. 1, and FIG. 3 is an adhesive element having a shape different from that of FIG. FIG. 4 is a cross-sectional view of the bonded element and the bonded plate after bonding, FIG. 5 is a bonded element having a plurality of bonded portions, FIG. 6 is a view taken in the direction of arrows BB in FIG. FIG. 7 is the same as FIG. 6 except that the bonding portion has a square planar shape. FIG. 8 is a bonding device having a continuous linear bonding portion. FIG. 9 is a drawing of FIG. FIG. 10 is a three-dimensional view of the micro vacuum chamber. FIG. 10 is a three-dimensional view of the micro vacuum chamber. FIG. 19 is a three-dimensional view of the micro vacuum chamber. FIG. 11 is a three-dimensional view of the micro vacuum chamber. FIG. 12 is a sectional view taken along line DD in FIG. 10 after bonding, FIG. 12 is a view from arrow E in FIG. 10, FIG. 13 is a view from arrow F in FIG. 10, FIG. 14 is a view from arrow G in FIG. The figure is a view taken in the direction of arrow H in FIG. 10, FIG. 16 is a view taken in the direction of arrow I in FIG. FIG. 10 is a view taken in the direction of the arrow J in FIG. 10, FIG. 18 is a view taken in the direction of the arrow K in FIG. 10, and FIG. 19 is a three-dimensional view of the micro vacuum chamber embodying the present invention. Is SiO 2 3-2 ...... insulator is Al single crystal 2-2 ...... Al single crystal 3-1 ...... insulator having a bonded component 2-1 ...... Fuasetsuto consisting 1 ...... Si single crystal SiO 2 4 ... Si single crystal layer as a conductor 5 ... Adhered member made of sapphire 6 ... Al conductive film 7 ... Grid electrode made of Al conductive layer 8 ... Insulator made of alumina 9 ... Electron Emission electrode
フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) C04B 37/02 B23K 20/00 C30B 33/06Continuation of front page (58) Field surveyed (Int.Cl. 6 , DB name) C04B 37/02 B23K 20/00 C30B 33/06
Claims (7)
意の個所に金属単結晶を結晶成長させ、前記金属単結晶
の結晶面を他方の被接着面上に押し付けることにより接
着させることを特徴とする接着素子。1. A method of forming a single crystal of a metal at an arbitrary position on one surface to be bonded by a selective deposition method, and bonding the single crystal by pressing the crystal surface of the single crystal on the other surface to be bonded. Characteristic adhesive element.
て形成されることを特徴とする請求項１に記載の接着素
子。2. The adhesive element according to claim 1, wherein the metal single crystal is formed of one of Al and Au.
｛100｝面とするような、面方位であることを特徴とす
る請求項２に記載の接着素子。3. The bonding element according to claim 2, wherein the plane orientation of the metal single crystal is such that the bonding surface is a {100} plane.
分を接着部とすることを特徴とする請求項２に記載の接
着素子。4. The bonding element according to claim 2, wherein the convex portion of the metal single crystal is used as a bonding portion.
変形させる様な低加重印加により接着することを特徴と
する請求項１に記載の接着素子。5. The bonding element according to claim 1, wherein the metal single crystal is bonded by applying a low load so as to plastically deform only a facet portion.
が、同種金属、異種金属、セラミツクス同士、半導体同
士、セラミツクス−金属、セラミツクス−半導体、金属
−半導体のうちのいずれかの組み合わせであることを特
徴とする請求項５に記載の接着素子。6. The combination of materials constituting the surface to be bonded is any combination of the same metal, different metal, ceramics, semiconductors, ceramics-metal, ceramics-semiconductor, and metal-semiconductor. The adhesive element according to claim 5, wherein
場合、すなわち結晶成長方向の逆方向から見た場合に円
形状、多角形状、あるいは線状であることを特徴とする
請求項４に記載の接着素子。7. The metal single crystal has a circular, polygonal, or linear shape when viewed from the bonding surface, that is, when viewed from the direction opposite to the crystal growth direction. 5. The adhesive element according to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2312080A JP2756363B2 (en) | 1990-11-17 | 1990-11-17 | Adhesive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2312080A JP2756363B2 (en) | 1990-11-17 | 1990-11-17 | Adhesive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04182364A JPH04182364A (en) | 1992-06-29 |
| JP2756363B2 true JP2756363B2 (en) | 1998-05-25 |
Family
ID=18024997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2312080A Expired - Fee Related JP2756363B2 (en) | 1990-11-17 | 1990-11-17 | Adhesive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2756363B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60323314D1 (en) * | 2002-10-04 | 2008-10-16 | Nexans | High temperature metal-ceramic superconductor composite and method of bonding a ceramic high temperature superconductor to a metal |
-
1990
- 1990-11-17 JP JP2312080A patent/JP2756363B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04182364A (en) | 1992-06-29 |
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