JPS63317666A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPS63317666A JPS63317666A JP15201687A JP15201687A JPS63317666A JP S63317666 A JPS63317666 A JP S63317666A JP 15201687 A JP15201687 A JP 15201687A JP 15201687 A JP15201687 A JP 15201687A JP S63317666 A JPS63317666 A JP S63317666A
- Authority
- JP
- Japan
- Prior art keywords
- target
- solder
- sputtering
- backing plate
- soldered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title abstract description 8
- 239000013077 target material Substances 0.000 claims description 19
- 238000005477 sputtering target Methods 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 19
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 230000035515 penetration Effects 0.000 abstract 2
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001007 puffing effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、スパッタリング用ターゲットの構造に閃する
。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to the structure of a sputtering target.
現在、スパッタリングによる薄膜の量産が多く行なわれ
るようになってきた。このような量産を行なうため、ス
パッタリングI!、ひいては、スパッ・タリング用ター
ゲットの大型化も進行している。スパッタリング用ター
ゲット材がセラミックス、金屑間化合物等の脆い材料で
あったりする場合1枚のターゲット材を作ることは困難
であり、ターゲット大型化の手段として複数個の分割さ
れたターゲット材を1枚のバッキングプレートに継ぎ合
わせ、はんだ付けする方法がとられている。Nowadays, mass production of thin films by sputtering is increasingly performed. In order to carry out such mass production, sputtering I! Furthermore, sputtering targets are also becoming larger. When the target material for sputtering is a brittle material such as ceramics or intermetallic compounds, it is difficult to make a single target material, and as a means of increasing the target size, multiple pieces of target material are divided into one sheet. The method used is to join the backing plate and solder it.
第2図に継ぎ合わせを使用したターゲットの1例を示す
0図中3個のターゲット材201が1枚のバッキングプ
レート202にはんだ付けされている。FIG. 2 shows an example of a target using splicing, in which three target materials 201 are soldered to one backing plate 202.
〔発明が解決しようとするr!41!lI点〕しかし、
前述の従来技術においては、ターゲット材の瞬ぎ目から
、はんだ材が毛細管現象によって吸い上がり、スパッタ
リングにより成膜した薄膜にはんだ材が混入するという
問題点を存する。[What the invention attempts to solve! 41! lI point] However,
The above-mentioned conventional technology has a problem in that the solder material is sucked up by capillary action when the target material blinks, and the solder material is mixed into the thin film formed by sputtering.
第3図に1.従来の技術による継ぎ目部の主要断面図を
示す、バッキングプレート303上にターゲット材30
1がはんだ材302を介しで接合されている。ターゲッ
ト材の継ぎ口部304にはんだ材が毛細管現象にて上昇
している。Figure 3 shows 1. A target material 30 is placed on a backing plate 303, showing a main cross-sectional view of a seam according to the prior art.
1 are connected via solder material 302. Solder material is rising to the joint portion 304 of the target material due to capillary action.
上述の問題点に対して、ターゲット材の間隔を広くとる
と毛細管現象は生じな(なるが、このとき継ぎ口部のエ
ローシコンが他の二ローションより早く進行したり、ま
た継ぎ口部のすき間を通じて、はんだ材あるいは、バッ
キングプレート材がスバフクされるという問題点が新た
に生ずる。Regarding the above-mentioned problem, if the spacing between the target materials is wide, the capillary phenomenon will not occur (but in this case, the erosion at the joint will progress faster than the other two lotions, and the erosion will occur through the gap at the joint). A new problem arises in that the solder material or the backing plate material is frayed.
そこで本発明は、このような問題点を解決するもので、
その目的とするところは、スパッタリング時に、はんだ
材、パフキングプレート材がスバフタされない分割、継
ぎ合わせターゲットを提供するところにある。Therefore, the present invention aims to solve these problems.
The purpose is to provide a splitting and splicing target in which solder material and puffing plate material are not blown away during sputtering.
本発明のスパッタリング用ターゲットは、分割された複
数ターゲット材を同一バッキングプレートにはんだ付け
し、一枚の板状とする種類のもので、ターゲット材の1
部分がターゲット材の他の1部分と接する継ぎ口部の接
面を、はんだ材の付着張力が低くなるように処理したこ
とを特徴とする。The sputtering target of the present invention is a type in which a plurality of divided target materials are soldered to the same backing plate to form a single plate.
It is characterized in that the contact surface of the joint part where the part contacts another part of the target material is treated so that the adhesion tension of the solder material is reduced.
本発明の上記の措成によれば、付着張力が低くなれば、
それに比例して、毛管上昇高さも低くなる。According to the above features of the present invention, if the adhesion tension becomes low,
The capillary rise height also decreases proportionally.
第1図は、本発明の実施例における断ぎ口部の主要断面
図である。ターゲット材101ははんだ材102を介し
てパフキングプレート103にはんだ付けされている。FIG. 1 is a main sectional view of a cutting edge in an embodiment of the present invention. Target material 101 is soldered to puffing plate 103 via solder material 102.
本実施例においては、ターゲット材101としてFeタ
ーゲットを用い、継ぎ口部の接面104に(1)Alを
蒸着、(2)Crを蒸着、(3)Tiを171f、(4
)Na蒸着、5)何もせず、以上5通りの表面処理を行
なった後、はんだ材としてInxバッキングプレートと
して銅を用い、真空雰囲気において、フラックスを用い
ず加熱はんだ付けを行なった。真空度は2X10−’T
orr1熱処理条件は220℃で20分間保温後、真空
雰囲気中で除冷を行なった。なお毛管上昇高さは、継ぎ
口部のすき間の長さに反比例するが、本実施例において
は、治具を用いターゲット材を左右から押して、すき間
がないように設計した。しかし実際には、加工精度の点
より、0〜O,1mm程度のすき間のばらつきがある。In this example, an Fe target is used as the target material 101, and on the contact surface 104 of the joint part, (1) Al is evaporated, (2) Cr is evaporated, (3) Ti is 171f, (4
) Na evaporation, and 5) nothing else. After performing the above five types of surface treatment, heat soldering was performed in a vacuum atmosphere without using flux, using copper as the Inx backing plate as the solder material. Vacuum degree is 2X10-'T
The orr1 heat treatment condition was to keep the temperature at 220° C. for 20 minutes and then slowly cool it in a vacuum atmosphere. The capillary rise height is inversely proportional to the length of the gap at the joint, but in this example, a jig was used to push the target material from the left and right so that there was no gap. However, in reality, due to processing accuracy, there is a variation in the gap of about 0 to 1 mm.
以上の6水準のターゲットの継ぎ口部を破壊して面10
6の高さを基準の毛管上昇高さをfi1表に示す。Destroy the joint part of the target of the above 6 levels and face 10
The height of capillary rise based on the height of No. 6 is shown in table fi1.
第1表
以上の結果より表面の処理の効果が明らかに認められる
。以上の効果はいずれも蒸着した金属が酸化物、あるい
は水酸化物を作った結果、付着張力が低くなったと考え
られる。このため、ターゲット自身の表面を酸化される
手段も有効である。From the results shown in Table 1 and above, the effect of surface treatment is clearly recognized. All of the above effects are thought to be due to the fact that the deposited metal forms oxides or hydroxides, which lowers the adhesion tension. For this reason, it is also effective to oxidize the surface of the target itself.
以上述べたように本発明によれば、分割された複数のタ
ーゲット材を同一パッキングプレートにはんだ付けをし
、1枚の板状とするスパッタリング用ターゲットにおい
て、ターゲット材の1部分がターゲット材の他の1部分
と接する継ぎ口部の接面をはんだ材の付着張力が低(な
るように処理したことにより、はんだ材が継ぎ口部を上
昇し、しみ出さないという効果を有する。As described above, according to the present invention, in a sputtering target in which a plurality of divided target materials are soldered to the same packing plate to form a single plate, one part of the target material is other than the target material. By treating the contact surface of the joint part that is in contact with a portion of the joint part so that the adhesion tension of the solder material is low, the solder material rises up the joint part and has the effect of not seeping out.
第1図は本発明のターゲットの継ぎ口部の主要断面図。
第2図は継ぎ合わせを使用したターゲットの1例を示す
図
第3図は従来のターゲットの継ぎ口部の主要断面図
以 上
出圀人 セイコーエプソン株式会社
代理人 弁理士 最 上 務 他1名/・ ゛FIG. 1 is a main cross-sectional view of the joint portion of the target of the present invention. Figure 2 shows an example of a target using splicing. Figure 3 is a main sectional view of the spliced part of a conventional target. /・ ゛
Claims (1)
トにはんだ付けし、一枚の板状とするスパッタリング用
ターゲットにおいて、ターゲット材の一部分がターゲッ
ト材の他の一部分と接する継ぎ目部の接面をはんだ材の
付着力が低くなるように処理したことを特徴とするスパ
ッタリング用ターゲット。In a sputtering target in which a plurality of divided target materials are soldered to the same backing plate to form a single plate, the contact surface of the joint where one part of the target material contacts another part of the target material is soldered. A sputtering target characterized by being treated to reduce adhesion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15201687A JPS63317666A (en) | 1987-06-18 | 1987-06-18 | Target for sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15201687A JPS63317666A (en) | 1987-06-18 | 1987-06-18 | Target for sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63317666A true JPS63317666A (en) | 1988-12-26 |
Family
ID=15531217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15201687A Pending JPS63317666A (en) | 1987-06-18 | 1987-06-18 | Target for sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63317666A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6428663B1 (en) * | 2000-07-03 | 2002-08-06 | Applied Materials, Inc. | Preventing defect generation from targets through applying metal spray coatings on sidewalls |
-
1987
- 1987-06-18 JP JP15201687A patent/JPS63317666A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6428663B1 (en) * | 2000-07-03 | 2002-08-06 | Applied Materials, Inc. | Preventing defect generation from targets through applying metal spray coatings on sidewalls |
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