JPS63143258A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPS63143258A JPS63143258A JP28990986A JP28990986A JPS63143258A JP S63143258 A JPS63143258 A JP S63143258A JP 28990986 A JP28990986 A JP 28990986A JP 28990986 A JP28990986 A JP 28990986A JP S63143258 A JPS63143258 A JP S63143258A
- Authority
- JP
- Japan
- Prior art keywords
- target
- cooling plate
- alloy
- sputtering
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims description 3
- 238000001816 cooling Methods 0.000 claims abstract description 30
- 229910001370 Se alloy Inorganic materials 0.000 claims abstract description 10
- 229910001215 Te alloy Inorganic materials 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 abstract description 13
- 238000005219 brazing Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000000945 filler Substances 0.000 abstract description 3
- 238000005304 joining Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract 2
- 238000003825 pressing Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005266 casting Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004663 powder metallurgy Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
〔産業上の利用分野〕
この発明は1例えば光ディスクの記録媒体薄膜をスパッ
タリングにより形成するに際して用いられる。Te、T
e合金、またはSe合金からなり、かつ冷却板にろう付
けされている薄い板状のターゲットに関するものである
。
〔従来の技術〕
上記のような光ディスクの記録媒体薄膜の形成に用いら
れるスパッタリング用ターゲットを1532するTe
、 Te合金、およびSe合金は、脆くて展延性がない
ため、これらに塑性加工を施すことができず、したがっ
て、このターゲットの製造には、溶解鋳造法および粉末
冶金法が用いられ、それによって製造された薄い板状の
ターゲットは、スパッタリング中過闇に加熱されるのを
防ぐため、InnIn合金、Sn + Sn合金等のろ
う材によって冷却板にろう付けされた状態で使用されて
いる。
〔発明が解決しようとする問題点〕
ところが近年においては、光ディスクの急激な需要増に
基づく量産化に対応する必要があるところから、ターゲ
ットの大型化が要望されているけれども−Te * T
e合金、およびSe合金は元来非常に脆い結晶からでき
ているうえに、このようなターゲットは通常3〜6mの
ような薄い板状に形成される2め割れ易く、シたがって
上記の溶解鋳造法では、製置されたターゲットが非常に
脆い鋳造組織で構成されているので、直径:125mの
寸法を越すターゲットを製造することは困難であl]。
またホットプレスのような粉末冶金法によっても。
500 yes X 500−の寸法を越える焼結ター
ゲットを製造することは困難であり、さらにターゲット
が大型Cヒするほど、tJrI工中のクラック発生等に
よる個数歩留りの低下も顕著になるので、現在では、上
記の要望に応えるに足る大型ターゲットはまだ得ら飢で
いない状況にある。
〔研究に基づく知見事項〕
そこで1本発明者等は、このような状況に鑑みて種々研
究を重ねた結果。
製作が容易な比較的小型のターゲット、すなわち薄い板
状のターゲット要素複数枚を、互にそれらの対向する側
部端面で当接または嵌合させるこ七によ[Industrial Application Field] The present invention is used, for example, when forming a recording medium thin film of an optical disk by sputtering. Te, T
The present invention relates to a thin plate-shaped target made of e-alloy or Se-alloy and brazed to a cooling plate. [Prior Art] A sputtering target used for forming a recording medium thin film of an optical disk as described above is a 1532 Te
, Te alloys, and Se alloys cannot be plastically worked due to their brittleness and non-ductility, so melt casting and powder metallurgy methods are used to manufacture this target, thereby The produced thin plate-shaped target is used while being brazed to a cooling plate with a brazing material such as InnIn alloy or Sn+Sn alloy to prevent it from being excessively heated during sputtering. [Problem to be solved by the invention] However, in recent years, there is a need to respond to mass production based on the rapid increase in demand for optical discs, so there is a demand for larger targets.
E-alloys and Se-alloys are originally made of very brittle crystals, and such targets are usually formed into thin plate shapes of 3 to 6 m. In the casting method, the cast target is composed of a very brittle cast structure, so it is difficult to manufacture a target larger than 125 m in diameter. Also by powder metallurgy methods such as hot pressing. It is difficult to manufacture a sintered target exceeding the dimensions of 500 yes However, there is still no shortage of large-scale targets that can meet the above demands. [Findings based on research] In view of this situation, the present inventors have conducted various studies. A relatively small target that is easy to manufacture, that is, a plurality of thin plate-like target elements, is brought into contact or fitted with each other at their opposing side end surfaces.
この発明は、上記知見に基づいて発明されたもので、従
来のターゲットと同様に、ターゲットに付随しているろ
う材ぢよび冷却板にスパッタリングを起すことなく、専
らターゲットのみがスパッタリングされる大型のターゲ
ットを提供することを目的とし。
Te 、 Te合金、またはSe合金からなl)、かつ
冷却板にろう付けされている薄い板状のスパッタリング
用タフゲットであって、前記ターゲットが、互に対向す
る側部端面で当接または嵌合し合うことによりつなぎ合
わされて、冷却板上に配置され。
かつその冷却板にろう付けされた複数枚の薄い板状のタ
ーゲット要素から構成され、そしてこのターゲット要素
の前記側部端面には、冷却板に対して傾斜した平面、屈
曲した平面、まtは曲面が形成されていることを特徴と
するものである。
〔発明の詳細な説明〕
1 ターゲットの材質
この発明のターゲットはTe 、 Te合金、またはS
e合金からな0.このうちTe合金およびSe合金は。
合金成分として1例えば、 Te + Se 、 Cu
+ Ag * Au +Zn r Cd * Ga
t In + I7 + Ct Ge r Sn *
Pb + As + Sb +B++およびSのうちの
l踵または2種以上を8宵するものであり、特にTeg
O8e10やT’e80se20のようなTe−Se合
金から構成される。
2 ターゲット要素
ターゲット要素とは、これらを互につなぎ合わせること
によってこの発明のターゲットを形成させるための、薄
板状ターゲットであって、これは従来の溶解鋳造法や粉
末冶金法などのどのような方法によって製置してもよく
、それが大きすぎると、材料が脆いため、前述のように
個数歩留(Jが低下し、一方それが小さ過ぎると、大型
のターゲットを作るのに多くの個数を必要として手数と
手間がかかり、生産性が低下するので、このターゲット
要素の寸法は1例えば、それが正方形の溶解鋳造品であ
る場合には、−辺を50〜1Oo−とし、また焼結材料
である場合には、−辺を100〜300■とするのがよ
く、その形状は特に制約されないが、ターゲットは通常
長方形または円形の形で使用されるので、一般に長方形
、ま2は分割された円形とするのカー好ましい。
2、 ターゲット要素のつなぎ合わされる側部端面の形
状
この発明のターゲットにおいては、第2図〜第4図に示
されるように、互につなぎ合わされるターゲット要素l
の側部端面1a+ laに1例えばシート状のろう2お
よび冷却板3に対して傾斜した平面(第2図)、屈曲し
た平面(第3図の(イ)およびICF) ) 11およ
び曲面(84図)が形成され、それらの端面1aとla
とが互に当接または嵌合し合っているので、スパッタリ
ング中に、これらのターゲット要素のつなぎ目から、ろ
う材や冷却板構成材がスパッタリングされて、成膜中に
目的元素以外の元素が混入してくるというトラブルを防
止することができる。
一般に、第3図に示した屈曲した平面および第4図に示
した曲面をターゲツト材要素の側部端面に形成させて、
これらを互に嵌合させるよりは。
第2図に示したような、冷却板に対して傾斜した平面を
前記端面に形成させて、これらを互に当接させる方が、
その端面の加工が容易である点で好ましいけれども、こ
の傾斜した角度θが小さすぎると、ろう材および冷却板
構成材(一般に銅または銅合金)がそのつなぎ目から放
散するおそれが生じ、一方その角度が大きすぎると、タ
ーゲツト材の材質が脆いtめ、そのような加工が困難と
なることから、この角度θは一般にlθ〜6(lj’で
あるのが好ましい。
〔実迩例〕
ついで、この発明を実施例によI】比較例と対比しなが
ら説明する。
通常の粉末冶金法によって焼結されf: −T”eQO
seiO(数字は原子%、以下同様)の組成および20
0rm X 200■X厚さ=6mの寸法を有するター
ゲラ)W素lを5枚つなぎ合わせることによって第【図
の平面図(イ)に示されるような大型ターゲットを製造
するために、前記ターゲット要素lのつなぎ目の側部端
面を、第1図のto)に部分拡大断面図で示されるよう
に、ろう2および冷却板3に対して30°の角度で傾斜
した平面1a、laに加工し。
ついでこれらのターゲット要素lを、前記傾斜した平面
を互に当接させた状態で、ただしこの傾斜面の加工誤差
に基づく隙間が1部分的にO,1〜0、2 mの間隔で
形成されている状態で、220n+mX1020+mX
厚さ:10閣の寸法を有する銅製冷却板(バッキングプ
レート)3上に、 In70Sn30からなる組成を有
する厚さ30μのろう2を用い一真空中、温度140℃
でろう付けすることによって1本発明ターゲットを製造
した。
さらに比較のため、前記ターゲット要素lの側部端面を
傾斜面とする加工を施さずに、すなわちこの側部端面1
a+laが冷却板3の表面に対して垂直となっている点
だけを除いて、前記と全く同様な方法により、前記本発
明ターゲットと同一の寸法を有する比較ターゲットを製
造した。
ついで、この結果得られた各ターゲットの特性を調査す
るため、これらのターゲットから、マグネトロンスパッ
タリングにより、最大出力=2.0W/、および薄膜形
成速度:200人/順において、直径:、3’00mm
の寸法を有するポリカーボネート製基体上に厚さ: 0
.1 fiの’re90selo薄膜を形成させ、その
薄膜中に混入したろう材および冷却板材(銅)の量を測
定したところ1本発明ターゲットでは、検知できるほど
の汚染物が見当らなかったのに対し、比較ターゲットで
は、汚染物が不均一:二分布し、全体として、ろうおよ
び冷却板に由来する汚染元素をO,1%含んでいた。
〔発明の効果〕
実施例の結果から1本発明ターゲットでは、ターゲット
のつなぎ目の側部端面を、冷却板に対してa6 M斜し
t平面に形成したために、スパッタリング中、ろうおよ
び冷却板に由来する汚染元素がスパッタリング膜中に混
入することがないのに対し、前記側部端面を単なる垂直
面とじt比較ターゲットでは、ターゲットのつなぎ目を
介して前記汚染元素が成膜中にスパッタリングされるこ
とがわかる。
以上述べた説明から明らかなように、この発明によると
、ろうおよび冷却板を構成する成分で汚染されないスパ
ッタリング嘆を形成できるTe、Te合金、またはSe
合金製の大型ターゲットを容易に。
かつ歩留りよく提供できるという、産業上互用な効果が
得られる。This invention was invented based on the above-mentioned knowledge, and, like conventional targets, it is a large-sized sputtering device in which only the target is sputtered without causing sputtering to the brazing material and cooling plate attached to the target. Aimed to serve the target. A thin plate-shaped sputtering tough target made of Te, Te alloy, or Se alloy and brazed to a cooling plate, wherein the targets abut or fit at mutually opposing side end surfaces. They are joined together by squeezing each other and placed on a cooling plate. The target element is composed of a plurality of thin plate-like target elements brazed to the cooling plate, and the side end surface of the target element has a plane inclined to the cooling plate, a bent plane, or a bent plane. It is characterized by a curved surface. [Detailed description of the invention] 1. Target material The target of this invention is Te, Te alloy, or S.
Made of e-alloy 0. Among these, Te alloy and Se alloy. As an alloy component, for example, Te + Se, Cu
+ Ag * Au + Zn r Cd * Ga
t In + I7 + Ct Ger Sn *
One or more of Pb + As + Sb + B++ and S is used for 8 nights, especially Teg
It is composed of a Te-Se alloy such as O8e10 or T'e80se20. 2 Target element Target element is a thin plate-like target that is used to form the target of the present invention by joining them together, and can be formed by any method such as conventional melt casting method or powder metallurgy method. If it is too large, the material will be brittle and the number yield (J) will decrease as mentioned above, while if it is too small, a large number of pieces will be required to make a large target. Since this requires time and effort and reduces productivity, the dimensions of this target element should be 1. For example, if it is a square melted casting, the sides should be 50 to 1 Oo, and the sintered material should be In this case, it is best to set the -side to 100 to 300 mm, and the shape is not particularly restricted, but since the target is usually used in a rectangular or circular shape, it is generally rectangular or divided into two. It is preferable that the shape be circular. 2. Shape of the side end faces of the target elements to be joined In the target of the present invention, as shown in FIGS. 2 to 4, the target elements to be joined to each other are
On the side end surface 1a+la of 1, for example, a plane inclined with respect to the sheet-shaped solder 2 and the cooling plate 3 (Fig. 2), a bent plane ((A) and ICF in Fig. 3) 11 and a curved surface (84). ) are formed, and their end faces 1a and la
During sputtering, the brazing filler metal and cooling plate constituent materials may be sputtered from the joints of these target elements, and elements other than the target elements may be mixed in during film formation. This can prevent problems such as Generally, the curved plane shown in FIG. 3 and the curved surface shown in FIG. 4 are formed on the side end surfaces of the target material elements;
Rather than having them fit together. As shown in FIG. 2, it is better to form a plane on the end face that is inclined with respect to the cooling plate and to make these abut against each other.
Although this is preferable because the end face can be easily machined, if the inclined angle θ is too small, there is a risk that the filler metal and the cooling plate component (generally copper or copper alloy) will dissipate from the joint; If θ is too large, such machining becomes difficult due to the brittle nature of the target material. Therefore, it is generally preferable that this angle θ is between lθ and 6 (lj'). The invention will be explained by way of examples and in comparison with comparative examples.
Composition of seiO (numbers are atomic %, same below) and 20
In order to manufacture a large target as shown in the plan view (a) of Fig. 1 by connecting five target elements (W elements) having dimensions of 0rm x 200cm x thickness = 6m, the target element The side end faces of the joints 1 and 1 are processed into flat surfaces 1a and 1a that are inclined at an angle of 30° with respect to the solder 2 and the cooling plate 3, as shown in the partially enlarged sectional view in t) of FIG. Next, these target elements 1 are placed in a state in which the inclined planes are brought into contact with each other, but gaps are partially formed at intervals of 0.1 to 0.2 m based on machining errors of the inclined surfaces. 220n+mX1020+mX
Thickness: On a copper cooling plate (backing plate) 3 having dimensions of 10 mm, a wax 2 having a thickness of 30 μ and having a composition of In70Sn30 was used at a temperature of 140°C in a vacuum.
One inventive target was manufactured by brazing. Furthermore, for comparison, without processing the side end surface of the target element l into an inclined surface, that is, this side end surface 1
A comparison target having the same dimensions as the target of the present invention was manufactured in the same manner as described above, except that a+la was perpendicular to the surface of the cooling plate 3. Next, in order to investigate the characteristics of each target obtained as a result, these targets were subjected to magnetron sputtering with a maximum output of 2.0 W/, a thin film formation rate of 200 persons/in order, and a diameter of 3'00 mm.
Thickness on a polycarbonate substrate with dimensions: 0
.. When a 1 fi 're90selo thin film was formed and the amount of brazing material and cooling plate material (copper) mixed into the thin film was measured, no detectable contaminants were found in the target of the present invention. The comparison target had a non-uniform distribution of contaminants, with an overall content of O,1% of contaminant elements originating from the wax and the cold plate. [Effects of the Invention] From the results of the examples, 1. In the target of the present invention, since the side end face of the joint of the target is formed in the t-plane oblique to the cooling plate, there is no possibility that during sputtering, there will be problems caused by the wax and the cooling plate. In contrast, when the side end faces are simply vertically connected to the comparative target, the contaminant elements are not likely to be sputtered during film formation through the joints of the targets. Recognize. As is clear from the above description, according to the present invention, Te, Te alloy, or Se can be used to form a sputtering layer that is not contaminated by the components constituting the solder and the cooling plate.
Easily handle large alloy targets. In addition, it can be provided at a high yield, which is an industrially compatible effect.
第1図はこの発明のターゲットの一例を示す図であって
、その(イ)は平面図、そしてその10)は(イ)に示
されたターゲットのつなぎ目を拡大して示す部分断面図
、第2図、第3図の(イ)および(ロ)、並びに第4図
はこの発明のターゲットのつなぎ目部分の別々の態様を
それぞれ拡大して示す部分断面図である。 図において
l ・ターゲットi素、 2・・・ろう。
3・・・冷却板。FIG. 1 is a diagram showing an example of the target of the present invention, in which (A) is a plan view, FIG. FIGS. 2, 3(a) and 3(b), and FIG. 4 are enlarged partial sectional views showing different aspects of the joint portion of the target of the present invention. In the figure, l ・Target i element, 2... Wax. 3...Cooling plate.
Claims (1)
にろう付けされている薄い板状のスパッタリング用ター
ゲットであつて、前記ターゲットが、互に対向する側部
端面で当接または嵌合し合うことによりつなぎ合わされ
て、冷却板上に配置され、 かつその冷却板にろう付けされた複数枚の薄い板状のタ
ーゲット要素から構成され、そしてこのターゲット要素
の前記側部端面には、冷却板に対して傾斜した平面、屈
曲した平面、または曲面が形成されていることを特徴と
する、前記ターゲット。[Scope of Claim] A thin plate-shaped sputtering target made of Te, Te alloy, or Se alloy and brazed to a cooling plate, wherein the target is in contact with mutually opposing side end surfaces. Consisting of a plurality of thin plate-like target elements connected by contacting or fitting together, placed on a cooling plate and brazed to the cooling plate, and said side end surface of said target element The target is characterized in that the target has a plane that is inclined with respect to the cooling plate, a plane that is bent, or a curved plane.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28990986A JPS63143258A (en) | 1986-12-05 | 1986-12-05 | Sputtering target |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28990986A JPS63143258A (en) | 1986-12-05 | 1986-12-05 | Sputtering target |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63143258A true JPS63143258A (en) | 1988-06-15 |
Family
ID=17749336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28990986A Pending JPS63143258A (en) | 1986-12-05 | 1986-12-05 | Sputtering target |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63143258A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003027227A (en) * | 2001-07-23 | 2003-01-29 | Dainippon Printing Co Ltd | Sputtering target |
EP1332512A2 (en) * | 2000-11-09 | 2003-08-06 | Williams Advanced Materials Inc. | Ion beam deposition targets having an interlocking interface and a replaceable insert |
WO2006127221A3 (en) * | 2005-05-24 | 2007-02-01 | Applied Materials Inc | Sputtering target tiles having structured edges separated by a gap |
US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
WO2012036079A1 (en) * | 2010-09-15 | 2012-03-22 | シャープ株式会社 | Manufacturing method for semiconductor device |
GB2485603A (en) * | 2010-11-22 | 2012-05-23 | Plastic Logic Ltd | Segmented target for vapour deposition process |
WO2013003065A3 (en) * | 2011-06-30 | 2013-04-18 | View, Inc. | Sputter target and sputtering methods |
JP2014114498A (en) * | 2012-12-12 | 2014-06-26 | Ulvac Japan Ltd | Sputtering apparatus |
JP2017108142A (en) * | 2011-11-29 | 2017-06-15 | 株式会社半導体エネルギー研究所 | Semiconductor device manufacturing method |
US9771646B2 (en) | 2011-04-21 | 2017-09-26 | View, Inc. | Lithium sputter targets |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57203771A (en) * | 1981-06-10 | 1982-12-14 | Mitsubishi Metal Corp | Manufacture of target for vapor-deposition |
JPS59133369A (en) * | 1983-01-21 | 1984-07-31 | Hitachi Ltd | Structural body for sputtering target |
JPS60131963A (en) * | 1983-12-21 | 1985-07-13 | Nippon Mining Co Ltd | Target plate for sputtering |
JPS60251272A (en) * | 1984-05-29 | 1985-12-11 | Hitachi Metals Ltd | Target for sputtering |
JPS6155811A (en) * | 1984-08-27 | 1986-03-20 | 株式会社日立製作所 | Sputtering target for forming transparent conductive film |
JPS61166964A (en) * | 1985-01-18 | 1986-07-28 | Tokuda Seisakusho Ltd | Target for sputtering |
JPS61227167A (en) * | 1985-03-29 | 1986-10-09 | Mitsubishi Metal Corp | Sintered alloy target material |
-
1986
- 1986-12-05 JP JP28990986A patent/JPS63143258A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57203771A (en) * | 1981-06-10 | 1982-12-14 | Mitsubishi Metal Corp | Manufacture of target for vapor-deposition |
JPS59133369A (en) * | 1983-01-21 | 1984-07-31 | Hitachi Ltd | Structural body for sputtering target |
JPS60131963A (en) * | 1983-12-21 | 1985-07-13 | Nippon Mining Co Ltd | Target plate for sputtering |
JPS60251272A (en) * | 1984-05-29 | 1985-12-11 | Hitachi Metals Ltd | Target for sputtering |
JPS6155811A (en) * | 1984-08-27 | 1986-03-20 | 株式会社日立製作所 | Sputtering target for forming transparent conductive film |
JPS61166964A (en) * | 1985-01-18 | 1986-07-28 | Tokuda Seisakusho Ltd | Target for sputtering |
JPS61227167A (en) * | 1985-03-29 | 1986-10-09 | Mitsubishi Metal Corp | Sintered alloy target material |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1332512A2 (en) * | 2000-11-09 | 2003-08-06 | Williams Advanced Materials Inc. | Ion beam deposition targets having an interlocking interface and a replaceable insert |
US6755944B2 (en) | 2000-11-09 | 2004-06-29 | Williams Advanced Materials, Inc. | Ion beam deposition targets having an interlocking interface and a replaceable insert |
JP2003027227A (en) * | 2001-07-23 | 2003-01-29 | Dainippon Printing Co Ltd | Sputtering target |
WO2006127221A3 (en) * | 2005-05-24 | 2007-02-01 | Applied Materials Inc | Sputtering target tiles having structured edges separated by a gap |
US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
US8753921B2 (en) | 2010-09-15 | 2014-06-17 | Sharp Kabushiki Kaisha | Manufacturing method for semiconductor device |
WO2012036079A1 (en) * | 2010-09-15 | 2012-03-22 | シャープ株式会社 | Manufacturing method for semiconductor device |
GB2485603A (en) * | 2010-11-22 | 2012-05-23 | Plastic Logic Ltd | Segmented target for vapour deposition process |
GB2485603B (en) * | 2010-11-22 | 2017-06-14 | Flexenable Ltd | Segmented target for vapour deposition process |
US9556509B2 (en) | 2010-11-22 | 2017-01-31 | Flexenable Limited | Vapour deposition |
US10125419B2 (en) | 2011-04-21 | 2018-11-13 | View, Inc. | Lithium sputter targets |
US9771646B2 (en) | 2011-04-21 | 2017-09-26 | View, Inc. | Lithium sputter targets |
EP2726642A4 (en) * | 2011-06-30 | 2014-11-05 | View Inc | Sputter target and sputtering methods |
EP2726642A2 (en) * | 2011-06-30 | 2014-05-07 | View, Inc. | Sputter target and sputtering methods |
CN103717782A (en) * | 2011-06-30 | 2014-04-09 | 唯景公司 | Sputter target and sputtering methods |
US9831072B2 (en) | 2011-06-30 | 2017-11-28 | View, Inc. | Sputter target and sputtering methods |
WO2013003065A3 (en) * | 2011-06-30 | 2013-04-18 | View, Inc. | Sputter target and sputtering methods |
CN109097746A (en) * | 2011-06-30 | 2018-12-28 | 唯景公司 | sputtering target and sputtering method |
US10615011B2 (en) | 2011-06-30 | 2020-04-07 | View, Inc. | Sputter target and sputtering methods |
JP2017108142A (en) * | 2011-11-29 | 2017-06-15 | 株式会社半導体エネルギー研究所 | Semiconductor device manufacturing method |
JP2014114498A (en) * | 2012-12-12 | 2014-06-26 | Ulvac Japan Ltd | Sputtering apparatus |
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