JPS57203771A - Manufacture of target for vapor-deposition - Google Patents

Manufacture of target for vapor-deposition

Info

Publication number
JPS57203771A
JPS57203771A JP8826381A JP8826381A JPS57203771A JP S57203771 A JPS57203771 A JP S57203771A JP 8826381 A JP8826381 A JP 8826381A JP 8826381 A JP8826381 A JP 8826381A JP S57203771 A JPS57203771 A JP S57203771A
Authority
JP
Japan
Prior art keywords
lot
deposition
vapor
vacuum
target materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8826381A
Other languages
Japanese (ja)
Inventor
Kosaburo Suehiro
Shoichi Kiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP8826381A priority Critical patent/JPS57203771A/en
Publication of JPS57203771A publication Critical patent/JPS57203771A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To efficiently obtain a lot of target materials for vapor-deposition, which have the same shape and the same performance, and can be handled easily, by filling an elastic substance vessel with a prescribed alloy pulverulent body, sealing it up to a vacuum, pressing it by cold-hydrostatic pressure, and after that, machining it. CONSTITUTION:An oxide, a sulfide, a selenide, and seleneum or a seleneum containing alloy pulverulent body are degassed in a vacuum, and after that, an elastic substance vessel of rubber, etc. is filled with them and is sealed up to a vacuum. It is put into a cold-hydrostatic pressure press, is pressed, also the obtained high density mold body is heat-treated as necessary, and the density of the molded body is elevated. Subsequently, machining such as grinding, cutting, polishing, etc. is performed, by which a lot of target materials are manufactured. According to this method, it is possible to obtain a lot of target materials for vapor-deposition having the same shape and the same performance, without variations, simultaneously from 1 lot.
JP8826381A 1981-06-10 1981-06-10 Manufacture of target for vapor-deposition Pending JPS57203771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8826381A JPS57203771A (en) 1981-06-10 1981-06-10 Manufacture of target for vapor-deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8826381A JPS57203771A (en) 1981-06-10 1981-06-10 Manufacture of target for vapor-deposition

Publications (1)

Publication Number Publication Date
JPS57203771A true JPS57203771A (en) 1982-12-14

Family

ID=13937992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8826381A Pending JPS57203771A (en) 1981-06-10 1981-06-10 Manufacture of target for vapor-deposition

Country Status (1)

Country Link
JP (1) JPS57203771A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124565A (en) * 1984-11-20 1986-06-12 Mitsubishi Metal Corp Manufacture of tellurium or tellurium alloy target material
JPS61227167A (en) * 1985-03-29 1986-10-09 Mitsubishi Metal Corp Sintered alloy target material
JPS6289863A (en) * 1985-10-16 1987-04-24 Hitachi Metals Ltd Target member
JPS6289862A (en) * 1985-10-16 1987-04-24 Hitachi Metals Ltd Target member
JPS62148362A (en) * 1985-12-24 1987-07-02 三菱マテリアル株式会社 Manufacture of target material for sputtering
JPS62186511A (en) * 1986-02-12 1987-08-14 Hitachi Metals Ltd Target member
JPS63143258A (en) * 1986-12-05 1988-06-15 Mitsubishi Metal Corp Sputtering target
JPH02213465A (en) * 1988-11-14 1990-08-24 Xerox Corp Partial crystallization-inhibiting method for chalcogenide alloy

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61124565A (en) * 1984-11-20 1986-06-12 Mitsubishi Metal Corp Manufacture of tellurium or tellurium alloy target material
JPH0355547B2 (en) * 1984-11-20 1991-08-23
JPS61227167A (en) * 1985-03-29 1986-10-09 Mitsubishi Metal Corp Sintered alloy target material
JPH0372153B2 (en) * 1985-03-29 1991-11-15 Mitsubishi Materials Corp
JPS6289863A (en) * 1985-10-16 1987-04-24 Hitachi Metals Ltd Target member
JPS6289862A (en) * 1985-10-16 1987-04-24 Hitachi Metals Ltd Target member
JPS62148362A (en) * 1985-12-24 1987-07-02 三菱マテリアル株式会社 Manufacture of target material for sputtering
JPS62186511A (en) * 1986-02-12 1987-08-14 Hitachi Metals Ltd Target member
JPS63143258A (en) * 1986-12-05 1988-06-15 Mitsubishi Metal Corp Sputtering target
JPH02213465A (en) * 1988-11-14 1990-08-24 Xerox Corp Partial crystallization-inhibiting method for chalcogenide alloy

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