JPS62148362A - Manufacture of target material for sputtering - Google Patents

Manufacture of target material for sputtering

Info

Publication number
JPS62148362A
JPS62148362A JP60290958A JP29095885A JPS62148362A JP S62148362 A JPS62148362 A JP S62148362A JP 60290958 A JP60290958 A JP 60290958A JP 29095885 A JP29095885 A JP 29095885A JP S62148362 A JPS62148362 A JP S62148362A
Authority
JP
Japan
Prior art keywords
powder
vacuum
target material
sputtering target
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60290958A
Other languages
Japanese (ja)
Inventor
正俊 福島
末広 幸三郎
福井 総一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP60290958A priority Critical patent/JPS62148362A/en
Publication of JPS62148362A publication Critical patent/JPS62148362A/en
Pending legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Press-Shaping Or Shaping Using Conveyers (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、例えば光ディスクの記録媒体薄膜をスパッ
タリングにより形成するに際して用いられるターゲット
材の製造法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for producing a target material used, for example, in forming a recording medium thin film of an optical disk by sputtering.

[従来の技術〕 一般に、例えば光ディスクの記録媒体薄膜が、Teおよ
びTe酸化物(以下、TeO□で示す)のうちの1種ま
たは2種を50重量%以上含有し、残りがd203I 
5b203. Bi、Q3. Qa2Q3. GeO□
、 In2O3゜PbO* MgO+ SiO、Ta 
O、SnO□、およびZnOからなる群のうちの1種ま
たは2種以上の酸化物からなるTe系複合材料で構成さ
れ、かつこの記録媒体薄膜がスパッタリングにより形成
され、したがってこれに用いられるターゲット材が前記
のTe系複合材料からなり、さらにこのターゲット材が
ホットプレス法により製造されることも良く知られると
ころである。
[Prior Art] Generally, for example, a recording medium thin film of an optical disk contains 50% by weight or more of one or two of Te and Te oxide (hereinafter referred to as TeO□), and the remainder is d203I.
5b203. Bi, Q3. Qa2Q3. GeO□
, In2O3゜PbO* MgO+ SiO, Ta
The recording medium thin film is formed by sputtering, and is made of a Te-based composite material consisting of one or more oxides from the group consisting of O, SnO□, and ZnO, and therefore the target material used for this is It is also well known that the target material is made of the above-mentioned Te-based composite material and that this target material is manufactured by a hot pressing method.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、上記のホットプレス法は、Te粉末および/ま
たはTeO□粉末と、酸化物粉末の混合粉末からなる原
料粉末を、上下または左右の2方回から加圧しながら焼
結する方法であるため、その形状に制限を受け、大型の
焼結体を製造するのが困難であるばかりでなく、焼結体
がプレス容器から汚染されたり、残留酸素によって酸化
されたり、さらに吸着ガスの揮発によって密度は不均一
が生じた()するために、品質の安定した均質のターゲ
ット材を大信生産することが不可能であり、したがって
この結果得られたターゲット材を用いて記録媒体薄膜を
形成した場合には、模写や表面平滑さ、さらに電気的特
性にバラツキが生じるようになるなどの問題点がある。
However, the above-mentioned hot press method is a method in which raw material powder consisting of a mixed powder of Te powder and/or TeO□ powder and oxide powder is sintered while being pressed from both the top and bottom or left and right directions. Not only is it difficult to manufacture large-sized sintered bodies due to restrictions on their shape, but the sintered bodies may be contaminated from the press container, oxidized by residual oxygen, and the density may decrease due to volatilization of adsorbed gas. Due to the non-uniformity (), it is impossible to produce a homogeneous target material with stable quality, and therefore, when a recording medium thin film is formed using the target material obtained as a result, However, there are problems such as variations in copyability, surface smoothness, and electrical characteristics.

〔問題点を解決するための手段〕[Means for solving problems]

そこで、本発明者等は、上述のような観点から、上記の
従来ターゲット材の製造法のもつ問題点を解決すべく研
究を行なった結果、 (at  原料粉末として、Te粉末および/またはT
eO□粉末と、酸化物粉末とをボールミルなどの混合機
で均一に混合粉砕した混合粉末を用い、この場合、前記
原料粉末をふるい分けして60〜635メツシュ、好ま
しくは100〜635メツシュの範囲の粒度をもつよう
に調整し、 この原料粉末をゴムやウレタンなどの弾性物質の容器に
詰めて真空密封し、この真空密封容器を冷間静水圧プレ
スにかけると、前記冷間静水圧プレスは全方向からの均
一加圧となるために、高密度で均質な圧粉体を成形する
ことができるばかりでなく、その寸法にほとんど制限を
受けず、例えば直径: 600Wφ×長さ:1000m
の大容量の圧粉体の成形を可能とし、さらに常温での成
形となるため、蒸気圧の高い原料粉末を用いても、従来
のホットプレス法の場合には高温のために揮発して組成
にずれが生じていたが、その組成にずれが生ずることが
ないこと。
Therefore, from the above-mentioned viewpoint, the present inventors conducted research to solve the problems of the conventional target material manufacturing method described above, and found that (at) Te powder and/or T
A mixed powder is used, in which eO□ powder and oxide powder are uniformly mixed and ground using a mixer such as a ball mill. This raw material powder is packed into a container made of an elastic material such as rubber or urethane, vacuum-sealed, and the vacuum-sealed container is subjected to a cold isostatic press. Because the pressure is applied uniformly from all directions, not only can a high-density and homogeneous green compact be formed, but there are almost no restrictions on its dimensions, such as diameter: 600Wφ x length: 1000m.
It is possible to mold a large-capacity green compact, and since the molding is performed at room temperature, even if raw material powder with high vapor pressure is used, it will volatilize due to the high temperature and the composition will be reduced. However, there should be no deviation in the composition.

(b)シかも、この結果得られた圧粉体は、上記のよう
に均質にして高密度および高強度を有するので、平滑度
を出すための平面研削加工や真円変を出すための円筒研
削、さらに一定の厚みのものを多数個切りだすためのダ
イヤモンドカッターやバンドソー加工などのほとんどの
機樟加工を適用することができることから、寸法精度の
高いターゲット材の8i緘υロエが可能となり、かつ弾
性物質製容器からの汚染も少なく、例え汚染があったと
しても圧粉体の表面部に限定されるので、後工程におけ
る機械υロエや脱脂、酸洗などの後処理によって汚染さ
れた表面部を容易に取除くことができること。
(b) Since the resulting green compact is homogeneous and has high density and high strength as described above, it may be subjected to surface grinding to achieve smoothness or cylindrical molding to create a perfect circular shape. Since it can be applied to most machine processing such as grinding and cutting out multiple pieces of a certain thickness using a diamond cutter or band saw, it is possible to process 8i width of target material with high dimensional accuracy. In addition, there is little contamination from containers made of elastic materials, and even if there is contamination, it is limited to the surface of the green compact, so it is possible to prevent surfaces contaminated by post-processing such as mechanical roteing, degreasing, and pickling. part can be easily removed.

(c)シたがって、この結果の均質にして高密度および
高強度を有し、取扱いが容易で、高い寸法精度を有し、
かつ簡単な操作での大情生産をコスト安く行なうことが
でき、さらに酸素含有量がきわめて低く、組成のずれの
ないターゲット材を用いれば、スパッタリング条件をタ
ーゲット材毎に設定しなおす必要のない状聾で、バラツ
キのない高品質の記録媒体薄膜を効率的に形成すること
が可能となること。
(c) the result is therefore homogeneous, has high density and high strength, is easy to handle and has high dimensional accuracy;
Moreover, it is possible to perform high-quality production with simple operations at low cost.Furthermore, if target materials with extremely low oxygen content and consistent composition are used, there is no need to reset sputtering conditions for each target material. It is possible to efficiently form a high-quality recording medium thin film without any variation in deafness.

(dl  また、上記の原料粉末は、表面積が非常に大
きく、かつガス吸着性もあるので、上記容器への真空密
封に先だって、真空脱ガス処理を旌してやると、成形さ
れた圧粉体の密度および均質性が一段と向上するように
なり、この場合、真空脱ガス処理条件としては、温度は
100℃〜粉体自体の蒸気圧が1 torrとなる温度
の範囲内の所定温度が最適で、真空度は1 torr以
下、処理時間は1〜5時間でよく、この真空脱ガス処理
は、場合によってはスパッタリング前のターゲット材に
itこともあること。
(dl) Also, since the above raw material powder has a very large surface area and has gas adsorption properties, if vacuum degassing is performed before vacuum-sealing the container, the density of the molded green compact will increase. In this case, the optimal vacuum degassing treatment conditions are a predetermined temperature within the range of 100°C to a temperature at which the vapor pressure of the powder itself is 1 torr. The temperature may be 1 torr or less and the processing time may be 1 to 5 hours, and in some cases, this vacuum degassing treatment may be applied to the target material before sputtering.

(el  さらに、上記の圧粉体を、不活性ガス雰囲気
中で、通常の条件で焼結すると、焼結体の密度が数%〜
10数もの範囲で向上するようになること。
(el Furthermore, when the above green compact is sintered under normal conditions in an inert gas atmosphere, the density of the sintered compact is several percent to
To be able to improve in a range of 10 or more.

以上(a)〜(elに示される知見を得たのである。The findings shown in (a) to (el) have been obtained above.

この発明は、上記知見にもとづいてなされたものであっ
て、 Te@宋および/またはTeO□粉宋を50重量%以上
當有し、残りが酸化物粉末からなる混合粉末で構成され
た原料粉末、あるいは真空脱ガス処理を旌した前記原料
粉末を、弾性物質製容器に詰めて、これを真空密封し、
この真空密封容器に冷間静水圧プレスによる全方回均−
IJD圧を旌して高密度均質圧粉体を成形し、さらにこ
の圧粉体に、必要に応じて通常の不活性雰囲気中での焼
結を屓して轡結体とし、この圧粉体または焼結体からQ
 m T′Jo工によりスパッタリング用ターゲット材
を形成する点に特徴を有するものである。
The present invention has been made based on the above findings, and includes a raw material powder composed of a mixed powder containing 50% by weight or more of Te@Song and/or TeO□ powder SONG, with the remainder being an oxide powder. Alternatively, the raw material powder that has been subjected to vacuum degassing treatment is packed into a container made of an elastic material, and this is vacuum-sealed,
This vacuum-sealed container is then subjected to all-round compression using a cold isostatic press.
A high-density homogeneous green compact is formed by applying IJD pressure, and if necessary, this green compact is sintered in a normal inert atmosphere to form a compact. Or Q from sintered body
This method is characterized in that the sputtering target material is formed by the mT'Jo process.

なお、この発明の方法を実施するに当っては、上記のよ
うに原料粉末の粒度を100〜625メツシュの範囲と
するのが望ましく、これは、原料粉末の粒度が60メツ
シュ以上であった昏1.6゜メツシュ以上の粗粒が原料
粉末中に混入していると、機械加工中やスパッタ中に割
れが生じたり、さらに密度ムラが起きて、スパッタ速度
がばらついたり、スパッタ中に異常放電が生じ、一方、
その粒度が625メツシュ以下の微細であったり、62
5メツシュ以下の細粒が多く混入していると、圧粉体の
密度が低くなるばか番]でなく、成形性も低下するよう
になって脆くなり、機械加工中やスパッタ中に割れが発
生し易くなるという理由によるものであり、この場合、
その粒度な100〜625メツシュにすると、一定の条
件下での密度のバラツキがほとんどなくなり、一段と高
密度および高強闇の圧粉体を成形することができるよう
になる。
In carrying out the method of the present invention, it is preferable that the particle size of the raw material powder is in the range of 100 to 625 meshes, as described above, and this is because the particle size of the raw material powder is 60 meshes or more. If coarse particles with a mesh size of 1.6° or more are mixed into the raw material powder, cracks may occur during machining or sputtering, uneven density may occur, sputtering speed may vary, and abnormal discharge may occur during sputtering. occurs, while
The particle size is fine, 625 mesh or less, or 62
If many fine particles of 5 mesh or less are mixed in, the density of the compact will not only decrease, but also the formability will decrease, making it brittle, and cracks will occur during machining and sputtering. This is because it makes it easier to do so, and in this case,
When the particle size is set to 100 to 625 mesh, there is almost no variation in density under certain conditions, and it becomes possible to mold a green compact with even higher density and higher strength.

〔実施例〕〔Example〕

つぎに、この発明の方法を実施例によ【)具体的に説明
する。
Next, the method of the present invention will be specifically explained using examples.

原料粉末として、いずれも60メツシュ以下の粒度を有
するTe粉宋、TeO2粉末、および各種の酸化物粉末
を用意し、これら原料粉末を第1表に示される配合組成
に配合し、乾式ボールミルを用いて粉砕混合し、ふるい
分けして第1表に示される粒度に調製し、これに1 t
orr以下の真空中、第1表に示される条件で真空脱ガ
ス処理を施した状態、あるいはこれを施さない状態で、
同じく第1表に示される寸法をもった弾性物質製容器で
あるゴム容器に第1表に示される檜の前記原料粉末を詰
め、真空密封した後、第1表に示される圧力で5分間の
冷間静水圧プレスを施して圧粉体を成形し、ついで、こ
の圧粉体から直接、あるいは圧粉体にAr雰囲気中、第
1表に示される条件で焼結を施して得られた焼結体から
、同じく第1表に示される寸法および個数のターゲット
材を機械υロエによ番)型造することによって本発明法
1〜14をそれぞれ実施した。
As raw material powders, Te powder, TeO2 powder, and various oxide powders, all of which have a particle size of 60 mesh or less, were prepared, and these raw material powders were blended into the composition shown in Table 1, using a dry ball mill. 1 t
In a vacuum of orr or less, with or without vacuum degassing treatment under the conditions shown in Table 1,
A rubber container made of an elastic material having dimensions also shown in Table 1 was filled with the raw material powder of cypress shown in Table 1, vacuum-sealed, and then heated at the pressure shown in Table 1 for 5 minutes. A green compact is formed by cold isostatic pressing, and then sintered directly from the green compact or by sintering the green compact in an Ar atmosphere under the conditions shown in Table 1. Methods 1 to 14 of the present invention were carried out by molding target materials having the dimensions and numbers shown in Table 1 from the solid body using a machine υRoe.

また、比較の目的で、それぞれ第2表に示される条件で
従来ホットプレス法1〜5を実施し、この結果得られた
焼結体から機械加工によ()@2表に示される寸法およ
び個数のターゲット材をそれぞれ製遺した。
For the purpose of comparison, conventional hot pressing methods 1 to 5 were carried out under the conditions shown in Table 2, and the resulting sintered bodies were machined to have the dimensions shown in Table 2. A number of target materials were prepared respectively.

つぎに、この本発明法1〜14および従来ホットプレス
法1〜5によって得られたターゲット材について、機械
υロエ後の割れ発生数を観察すると共に、スパッタリン
グ装置に組込み、スパッタによる割れ発生数を観察した
。これらの結果をそれぞれ第1表および第2表に示した
Next, for the target materials obtained by the methods 1 to 14 of the present invention and the conventional hot press methods 1 to 5, the number of cracks generated after mechanical roteing was observed, and the number of cracks generated by sputtering was measured by incorporating it into a sputtering device. Observed. These results are shown in Tables 1 and 2, respectively.

〔発明の効果〕〔Effect of the invention〕

第1表および第2表に示される結果から、本発明法1〜
14によって製造されたターゲット材は、高密度および
高強度を有し、かつ均質性にもすぐれているので、機械
加工やスパッタ中に割れが発生することが皆塀であるの
に対して、従来ホットプレス法1〜5によって製造され
たターゲット材においては、機械加工およびスパッタ中
の割れ発生がきわめて著しいことが明らかである。
From the results shown in Tables 1 and 2, it can be seen that methods 1 to 1 of the present invention
The target material manufactured by No. 14 has high density, high strength, and excellent homogeneity, so it is difficult to crack during machining or sputtering. It is clear that in the target materials manufactured by hot pressing methods 1 to 5, cracking during machining and sputtering is extremely significant.

上述のように、この発明の方法によれば、高密度および
高強度を有し、取扱いが容易で、高い寸法精度を有し、
さらに酸素含有壜がきわめて低く、かつ組成にずれのな
いターゲット材を簡単な操作で、歩留りよく、大川生産
することができ、しかもこの結果のターゲット材によれ
ば、スパッタリング条件をターゲット材毎に設定しな2
す必要なく、バラツキのない高品質の記録媒体薄膜を効
率的に形成することができるなど工業上有用な効果がも
たらされるのである。
As described above, according to the method of the present invention, it has high density and high strength, is easy to handle, has high dimensional accuracy,
Furthermore, target materials with extremely low oxygen content and no deviation in composition can be produced with simple operations and high yields. Moreover, with the resulting target materials, sputtering conditions can be set for each target material. Shina 2
Industrially useful effects such as the ability to efficiently form a uniform, high-quality thin film of a recording medium without the need for further processing are brought about.

Claims (6)

【特許請求の範囲】[Claims] (1)Te粉末およびTe酸化物粉末のうちの1種また
は2種を50重量%以上含有し、残りが酸化物粉末から
なる混合粉末で構成された原料粉末を、弾性物質製容器
に詰めて、これを真空密封し、この真空密封容器に冷間
静水圧プレスによる全方向均一加圧を施して高密度均質
圧粉体を成形し、この圧粉体をスパッタリング用ターゲ
ット材に機械加工することを特徴とするスパッタリング
用ターゲット材の製造法。
(1) A raw material powder composed of a mixed powder containing 50% by weight or more of one or two of Te powder and Te oxide powder, with the remainder being oxide powder, is packed in an elastic material container. , vacuum-seal this, apply uniform pressure in all directions using a cold isostatic press to this vacuum-sealed container to form a high-density homogeneous green compact, and machine this green compact into a sputtering target material. A method for producing a sputtering target material characterized by:
(2)上記原料粉末を、上記容器への真空密封に先だつ
て、真空脱ガス処理することを特徴とする上記特許請求
の範囲第(1)項記載のスパッタリング用ターゲット材
の製造法。
(2) The method for producing a sputtering target material according to claim 1, wherein the raw material powder is subjected to vacuum degassing treatment prior to being vacuum-sealed in the container.
(3)上記原料粉末が、60〜635メッシュの範囲内
の粒度をもつことを特徴とする上記特許請求の範囲第(
1)項または第(2)項記載のスパッタリング用ターゲ
ット材の製造法。
(3) The raw material powder has a particle size within the range of 60 to 635 mesh.
A method for producing a sputtering target material according to item 1) or item (2).
(4)Te粉末およびTe酸化物粉末のうちの1種また
は2種を50重量%以上含有し、残りが酸化物粉末から
なる混合粉末で構成された原料粉末を、弾性物質製容器
に詰めて、これを真空密封し、この真空密封容器に冷間
静水圧プレスによる全方向均一加圧を施して高密度均質
圧粉体とし、ついでこの圧粉体を不活性雰囲気中で焼結
して焼結体とし、この焼結体をスパッタリング用ターゲ
ット材に機械加工することを特徴とするスパッタリング
用ターゲット材の製造法。
(4) A raw material powder composed of a mixed powder containing 50% by weight or more of one or two of Te powder and Te oxide powder, with the remainder being oxide powder, is packed in an elastic material container. This is vacuum-sealed, and this vacuum-sealed container is subjected to uniform pressure in all directions using a cold isostatic press to produce a high-density homogeneous green compact, and then this green compact is sintered in an inert atmosphere. A method for producing a sputtering target material, which comprises forming a sintered body into a solid body, and machining the sintered body into a sputtering target material.
(5)上記原料粉末を、上記容器への真空密封に先だつ
て、真空脱ガス処理することを特徴とする上記特許請求
の範囲第(4)項記載のスパッタリング用ターゲット材
の製造法。
(5) The method for producing a sputtering target material according to claim (4), characterized in that the raw material powder is vacuum degassed prior to being vacuum-sealed in the container.
(6)上記原料粉末が160〜635メッシュの範囲内
の粒度をもつことを特徴とする上記特許請求の範囲第(
4)項または第(5)項記載のスパッタリング用ターゲ
ット材の製造法。
(6) The raw material powder has a particle size within the range of 160 to 635 mesh.
The method for producing a sputtering target material according to item 4) or item (5).
JP60290958A 1985-12-24 1985-12-24 Manufacture of target material for sputtering Pending JPS62148362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60290958A JPS62148362A (en) 1985-12-24 1985-12-24 Manufacture of target material for sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60290958A JPS62148362A (en) 1985-12-24 1985-12-24 Manufacture of target material for sputtering

Publications (1)

Publication Number Publication Date
JPS62148362A true JPS62148362A (en) 1987-07-02

Family

ID=17762662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60290958A Pending JPS62148362A (en) 1985-12-24 1985-12-24 Manufacture of target material for sputtering

Country Status (1)

Country Link
JP (1) JPS62148362A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014129231A (en) * 2005-02-01 2014-07-10 Tosoh Corp Sintered compact and sputtering target

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203771A (en) * 1981-06-10 1982-12-14 Mitsubishi Metal Corp Manufacture of target for vapor-deposition
JPS60131963A (en) * 1983-12-21 1985-07-13 Nippon Mining Co Ltd Target plate for sputtering

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203771A (en) * 1981-06-10 1982-12-14 Mitsubishi Metal Corp Manufacture of target for vapor-deposition
JPS60131963A (en) * 1983-12-21 1985-07-13 Nippon Mining Co Ltd Target plate for sputtering

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014129231A (en) * 2005-02-01 2014-07-10 Tosoh Corp Sintered compact and sputtering target

Similar Documents

Publication Publication Date Title
JPS6025385B2 (en) Manufacturing method of ceramics for cutting tools
KR20050106475A (en) Sputtering target and process for producing the same
JPS61139637A (en) Target for sputter and its manufacture
TWI739865B (en) Mn-Zn-O BASED SPUTTERING TARGET AND PRODUCTION METHOD THEREROR
JP2001098359A (en) MANUFACTURE OF Mg-CONTAINING ITO SPUTTERING TARGET AND Mg-CONTAINING ITO EVAPORATION MATERIAL
JPS62148362A (en) Manufacture of target material for sputtering
JPH0317905B2 (en)
JP4075361B2 (en) Method for producing Mg-containing ITO sputtering target
JPWO2019031105A1 (en) Oxide sintered body and sputtering target
JP3142858B2 (en) Ferrite molded product and its manufacturing method
EP0409646A2 (en) Compound for an injection molding
JPS61124565A (en) Manufacture of tellurium or tellurium alloy target material
JPH06182732A (en) Manufacture of ceramic target
JPS6328987B2 (en)
JP2003055759A (en) METHOD FOR MANUFACTURING Mg-CONTAINING ITO SPUTTERING TARGET
JPS63162863A (en) Manufacture of chromium target for sputtering
JP3665553B2 (en) Conductive low thermal expansion ceramic sintered body
JPH01309961A (en) Cr-cu target material and its production
JP2725331B2 (en) Target material manufacturing method
JPS63290272A (en) Production of rare earth element-transition metal target material
JPS5851402B2 (en) Porcelain for magnetic head structural parts and method for manufacturing the same
JP5115249B2 (en) Vapor deposition material and method for forming a vapor deposition film using the vapor deposition material
JP3472993B2 (en) Sputtering target for forming indium tin oxide film and method for producing the same
JPH01247504A (en) Method for degreasing green compact
JPH03193605A (en) Production of target material for forming oxide superconducting thin film