JPS63162863A - Manufacture of chromium target for sputtering - Google Patents
Manufacture of chromium target for sputteringInfo
- Publication number
- JPS63162863A JPS63162863A JP31057186A JP31057186A JPS63162863A JP S63162863 A JPS63162863 A JP S63162863A JP 31057186 A JP31057186 A JP 31057186A JP 31057186 A JP31057186 A JP 31057186A JP S63162863 A JPS63162863 A JP S63162863A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- vacuum
- target
- sputtering
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims description 12
- 239000011651 chromium Substances 0.000 title description 34
- 229910052804 chromium Inorganic materials 0.000 title description 11
- 239000000843 powder Substances 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000001513 hot isostatic pressing Methods 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 17
- 239000010935 stainless steel Substances 0.000 abstract description 17
- 238000003754 machining Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、フォトマスク材料、ハードディスク用記録
媒体、サーマルプリンタ電極、および乾式メッキ材とし
て利用されるクロム薄膜をスパッタリング法によって形
成するに際して用いられるクロムターゲットの製造方法
に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is used to form a chromium thin film by sputtering, which is used as a photomask material, a hard disk recording medium, a thermal printer electrode, and a dry plating material. The present invention relates to a method for manufacturing a chromium target.
スパッタリング法によって形成されるクロム薄膜は、フ
ォトマスク材料、ハードディスク用記録媒体、サーマル
プリンタ電極、乾式メッキ材、および多層配線下地用材
料として、現在実用化されており、このスパッタリング
法において使用されるクロムターゲットは、塊状のクロ
ムを真空アーク溶解炉で溶解し、それによって生成した
溶湯を鋳型内に注いで板状のクロム鋳塊を形成させる溶
解鋳造法、容器内に充填されたCr粉末を、高温下で二
方向から圧縮するホットプレスによって焼結体とする粉
末焼結法、またはCr粉末をステンレス製の缶に入れて
真空脱気し、このCr粉末をステンレス缶ごと均熱した
後、熱間圧延して、前記Cr粉末を焼結体とする熱間ロ
ール法によって製造されている。Chromium thin films formed by the sputtering method are currently in practical use as photomask materials, hard disk recording media, thermal printer electrodes, dry plating materials, and multilayer wiring base materials. The target is a melting and casting method in which lumpy chromium is melted in a vacuum arc melting furnace and the resulting molten metal is poured into a mold to form a plate-shaped chromium ingot. There is a powder sintering method in which a sintered body is formed by hot pressing, which is compressed from two directions at the bottom, or the Cr powder is placed in a stainless steel can, vacuum degassed, the Cr powder is soaked together with the stainless steel can, and then hot-sintered. It is manufactured by a hot rolling method in which the Cr powder is rolled into a sintered body.
しかしながら、前記の溶解鋳造法では、溶解中にクロム
が激しく揮発するために、得られる鋳塊量が半減して、
歩留りが著しく低く、また前記の粉末焼結法では、プレ
ス容器内でCr粉末を高温にさらしながら二方向から加
圧することによって焼結体を製造しているために、その
寸法はプレス容器の寸法に依存して比較的小形のものし
か得られない上に、焼結体がプレス容器により汚染され
たり、あるいは残留酸素によシ酸化され、さらに吸着ガ
スの揮発によって焼結体あ密度が不均一となυ易く、さ
らに前記熱間ロール法では、一度に多数の焼結体を製造
できないので生産性が悪く、したがって、上記いずれの
方法によっても品質の安定した均質のターゲットを大量
生産するこ七ができず、またこの結果得られたターゲッ
トを用いてスパッタリング膜を形成すると、膜厚、表面
平滑性、および電気的特性にバラツキを生ずるという問
題があった。However, in the above-mentioned melting and casting method, the amount of ingot obtained is reduced by half because chromium is violently volatilized during melting.
The yield is extremely low, and in the powder sintering method described above, the sintered body is manufactured by exposing the Cr powder to high temperature in a press container and pressurizing it from two directions, so the dimensions are limited to the dimensions of the press container. In addition, the sintered body may be contaminated by the press container or oxidized by residual oxygen, and the density of the sintered body may be uneven due to volatilization of the adsorbed gas. Furthermore, the hot rolling method described above has poor productivity because it is not possible to produce a large number of sintered bodies at once. Therefore, it is difficult to mass-produce homogeneous targets with stable quality using any of the above methods. Moreover, when a sputtering film is formed using the target obtained as a result, there is a problem that variations occur in film thickness, surface smoothness, and electrical characteristics.
そこで、本発明者等は、このような状況に鑑みて種々研
究を重ねた結果、
(1) Cr粉末をステンレス製の缶のような金属容
器に詰めて、これを真空密封し、この真空密封容器に熱
間静水圧プレスによる全方向均一の加熱、加圧処理を施
して得た成形体は、吸着ガスを含まないで、密度にむら
がなく、均質であり、しかも上記のような熱間静水圧プ
レス(HIP)によれば、その成形体を酸化したり、あ
るいは成形体に熱歪や加工歪を生ずることなく、例えば
、幅:500隨×長さ=600〜800朋×厚さ:40
0間のような大きな成形体も含めて、種々の大きさの成
形体を製造することができ、したがって、特に大きな成
形体をスライスすれば、均質で大形の板体がまとめて多
数得られるので、均質で大形のターゲットを効率よく製
造できること、(2)前記真空密封に際して、Cr粉末
を詰めた前記金属容器を加熱しながら真空引きすると、
前記金属容器内のCr粉末粒子の間に介在している酸素
、水素、窒素等のガス体は一層完全に除去されるので、
一段と不純物の少ないクロムターゲットが得られること
、
を見出した。In view of this situation, the inventors of the present invention have conducted various studies and found that (1) Cr powder is packed in a metal container such as a stainless steel can, and the container is vacuum-sealed. The molded product obtained by uniformly heating and pressurizing a container in all directions using hot isostatic pressing does not contain adsorbed gas, has uniform density, is homogeneous, and is According to hydrostatic pressing (HIP), for example, width: 500 mm x length = 600 to 800 mm x thickness: 40
It is possible to produce molded bodies of various sizes, including those as large as 0. Therefore, by slicing a particularly large molded body, a large number of homogeneous large-sized plates can be obtained at once. Therefore, a homogeneous and large-sized target can be efficiently manufactured; (2) when vacuum sealing is performed, the metal container filled with Cr powder is evacuated while being heated;
Since gases such as oxygen, hydrogen, and nitrogen interposed between the Cr powder particles in the metal container are more completely removed,
We have discovered that a chromium target with even fewer impurities can be obtained.
この発明は、上記知見に基づいて発明されたもので、純
度が高く、かつ品質の安定した均質のクロムターゲット
を大形の状態でも製造できる、生産性にすぐれたスパッ
タリング用クロムターゲットの製造方法を提供すること
を目的とし、Cr粉末を金属容器に詰めて、これを、必
要に応じて、加熱しながら真空引きして、真空密封し、
この真空密封容器に熱間静水圧プレスによる全方向均一
の加熱、加圧処理を施して、前記Cr粉末を高密度の均
質成形体に成形し、ついで前記容器内から取り出した前
記成形体を所定厚みの板体にスライスした後、これらの
板体に機械加工を施してその板体をスパッタリング用タ
ーゲットとすることを特徴とするものである。This invention was invented based on the above knowledge, and provides a highly productive method for manufacturing a chromium target for sputtering that can manufacture a homogeneous chromium target of high purity and stable quality even in a large size. Cr powder is packed in a metal container, which is vacuum-sealed by heating and vacuuming as needed.
This vacuum-sealed container is subjected to uniform heating and pressure treatment in all directions using a hot isostatic press to form the Cr powder into a high-density homogeneous molded body, and then the molded body taken out from the container is placed in a predetermined shape. The method is characterized in that after slicing into thick plates, these plates are machined and used as sputtering targets.
1、 0r粉末
この発明においては、種々の方法によって製造されたC
r粉末を使用できるが、一般に、電解クロムのスタンピ
ングによって製造された、粒度:40〜250μを有す
るCr粉末が使用される。1.0r powder In this invention, C produced by various methods is used.
Although Cr powder can be used, generally Cr powder with particle size: 40-250μ, produced by electrolytic chromium stamping, is used.
2、真空密封
上記のCr粉末が、金属容器、例えば、洩々の形、状、
寸法を有するステンレス鋼製容器(ステンレス缶)本体
の中央にステンレス管を垂直に取り付けたステンレス缶
の内部に充填された後、前記ステンレス缶の内部を通常
5〜10時間排気して、例えば真空度: I X 10
〜lXl0 Torrtで真空引きする。2. Vacuum sealing The above Cr powder is placed in a metal container, for example, in a leaky shape,
After filling the inside of a stainless steel can with a stainless steel pipe vertically attached to the center of the main body, the inside of the stainless steel can is usually evacuated for 5 to 10 hours to maintain a vacuum level, for example. : IX10
Vacuum at ~lXl0 Torrt.
この真空引きによって、Cr粉末粒子間に介在していた
o2、N2、N2等のガス状不純物は、通常はぼ完全に
除去されるが、金属容器内のCr粉末を例えば400〜
600℃に加熱しながら真空引きすると、容器内の真空
度はl X 10 Torrに達して、前記ガス状不
純物は一7鳴完全に除去されるので、前記真空引きの際
には、必要に応じてCr粉末を加熱する。By this evacuation, gaseous impurities such as O2, N2, and N2 that were present between the Cr powder particles are usually almost completely removed.
When vacuuming is performed while heating to 600°C, the degree of vacuum inside the container reaches 1 × 10 Torr, and the gaseous impurities are completely removed. to heat the Cr powder.
ステンレス缶内の真空度が前記の値に達した後、前記ス
テンレス管の根もとをガスバーナーで加熱圧着すること
によって、Cr粉末はステンレス缶内に真空密封される
。After the degree of vacuum within the stainless steel can reaches the above value, the base of the stainless steel tube is heated and pressed with a gas burner, thereby vacuum-sealing the Cr powder inside the stainless steel can.
3、 熱間静水圧プレス(H工P)
前述のようにCr粉末が真空密封されている金属容器は
、熱間静水圧プレス装置の圧力容器内に収納された後1
通常、温度:1100〜1300℃および圧カニ 80
0〜1200に9/Crrt2の下に30〜180分間
保持され、それによってCr粉末は粒子どうしが隙間な
く融着して高密度の均質成形体に変わる。3. Hot isostatic press (H-P) As mentioned above, the metal container in which the Cr powder is vacuum-sealed is placed in the pressure vessel of the hot isostatic press equipment.
Usually temperature: 1100-1300℃ and pressure crab 80
0 to 1200 for 30 to 180 minutes under 9/Crrt2, whereby the particles of the Cr powder are fused together without any gaps and transformed into a high-density homogeneous molded body.
4、成形体の切断および機械加工
熱間静水圧プレスによって形成された成形体は、そのま
わシの金属容器を、例えばシェーバ−で削シ取ることに
よってその金属容器から取り出され、ついでこの成形体
は、例えばパントン−により、通常6〜10朋の厚さを
有する板体に切断された後、この板体はロータリー サ
ーフェイスまたは平面研削板で加工されて、所定の形状
、寸法を有するターゲットに仕上げられる。4. Cutting and machining of molded body The molded body formed by hot isostatic pressing is removed from the metal container by scraping the metal container with a shaver, for example, and then the molded body is is cut, for example, by a Pantone machine, into a plate with a thickness of usually 6 to 10 mm, and then this plate is processed with a rotary surface or a plane grinding plate to finish it into a target with a predetermined shape and dimensions. It will be done.
ついで、この発明を実施例シてよって説明する。 Next, the present invention will be explained with reference to examples.
肉厚:2Bを有し、かつ内部に縦:zoomxx横:2
50mX高さ:600Igの空間を有する直方体状のス
テンレス缶本体の中央部に外径=12mX長さ: 50
0MtX厚さ:2碩のステンレス管が垂直に取り付けら
れているステンレス缶の前記空間内に、平均粒径:10
0μmを有する純度二99.9%のCr粉末を充填し、
ついでこのCr粉末を温度=400℃に加熱しながら、
前記ステンレス管を通してステンレス缶の内部を8時間
排気することによって、その真空度をI X 10””
Torrまで高めた後、ステンレス管の根もとをガス
バーナで加熱圧着して、前記Cr粉末をステンレス缶内
に真空密封した。Wall thickness: 2B, and internal length: zoomxx width: 2
In the center of a rectangular parallelepiped stainless steel can body with a space of 50 m x height: 600 Ig, outer diameter = 12 m x length: 50
0 Mt
Filled with 299.9% purity Cr powder with 0μm,
Next, while heating this Cr powder to a temperature of 400°C,
By evacuating the inside of the stainless steel can for 8 hours through the stainless steel tube, the degree of vacuum is reduced to I x 10".
After raising the temperature to Torr, the base of the stainless steel pipe was heated and pressed with a gas burner, and the Cr powder was vacuum-sealed inside the stainless steel can.
つぎに、このようにステンレス缶内に真空パックされた
Cr粉末を熱間静水圧プレスの圧力容器内て入れた後、
この圧力容器内の雰囲気を温度:1100℃および圧カ
ニ1000kg/CrIL2に90分間保持して、前記
Cr粉末を相対密度=100%の成形体に変えた。Next, after putting the Cr powder vacuum-packed in the stainless steel can into the pressure vessel of the hot isostatic press,
The atmosphere in this pressure vessel was maintained at a temperature of 1100° C. and a pressure of 1000 kg/CrIL2 for 90 minutes to convert the Cr powder into a compact having a relative density of 100%.
その後、室温まで冷却したステンレス缶をシェーバ−【
よシ取り除込て、縦:18QrutX横:225MX高
さ:54C)ulの寸法を有する成形体を取り出し、そ
してこの成形体をパントン−により、高さ方向に沿って
厚さ二8Bの薄い板体16枚に切断した後、これらの板
体にフライスおよびロータリー サーフェイスにより機
械加工を施して、厚さ二6馴×縦=530鎮X横:21
5mmの寸法を有するターケ゛ット16枚をまとめて製
造した。After that, shave the stainless steel can that has been cooled to room temperature.
Remove it and take out the molded body having the dimensions of Length: 18 Qrut x Width: 225 MX Height: 54 C)ul, and cut this molded body into a thin plate with a thickness of 28 B along the height direction using Pantone. After cutting the body into 16 pieces, these plates were machined using a milling cutter and a rotary surface to a thickness of 26 mm x length = 530 mm x width: 21 mm.
A total of 16 targets with a size of 5 mm were produced.
ついで、このようにして製造した各ターゲットの任意の
場所から切り出した16個の試料について、密度を測定
するとともに、Pb、 All、 Cu、 Fe、0、
C等の不純物含有量を機器分析で調べだところ、いずれ
の試料においても、密度と上記不純物含有量に差異が認
められず、これらの点でターゲットはすべて均質である
ことがわかった。Next, the densities of 16 samples cut out from arbitrary locations on each of the targets produced in this way were measured, and Pb, All, Cu, Fe, 0,
When the content of impurities such as C was investigated by instrumental analysis, no difference was observed in the density and the above impurity content in any of the samples, and it was found that all targets were homogeneous in these respects.
以上述べた説明から明らかなように、この発明において
は、Cr粉末を金属容器内に真空密封して、それに、熱
間静水圧プレスによる全方向均一の加熱、加圧処理を施
しているために、PI)、 AX、 cu、Fe、0、
C等の不純物で汚染されることも、また熱歪や加工歪を
生ずることもない、高密度で均質な成形体が得られ、し
かもターゲットはこのような成形体をスライスすること
によって製造されるので、この発明によると、純度にす
ぐれ、かつ均質で、品質の安定したターゲットを能率よ
く、さらに大形のターゲットでも製造できるという種々
のすぐれた効果が得られる。As is clear from the above description, in the present invention, the Cr powder is vacuum-sealed in a metal container and subjected to uniform heating and pressure treatment in all directions by hot isostatic pressing. , PI), AX, cu, Fe, 0,
A high-density, homogeneous molded body that is neither contaminated with impurities such as C nor caused by thermal distortion or processing distortion can be obtained, and the target is manufactured by slicing such a molded body. Therefore, according to the present invention, various excellent effects such as being able to efficiently produce targets with excellent purity, homogeneity, and stable quality, even large targets can be obtained.
Claims (2)
、この真空密封容器に熱間静水圧プレスによる全方向均
一の加熱、加圧処理を施して、前記Cr粉末を高密度の
均質成形体に成形し、ついで前記容器内から取り出した
前記成形体を所定厚みの板体にスライスした後、これら
の板体に機械加工を施してその板体をスパッタリング用
ターゲットとすることを特徴とする、スパッタリング用
クロムターゲツトの製造方法。(1) Fill a metal container with Cr powder, vacuum-seal the container, and apply uniform heating and pressure treatment in all directions using hot isostatic pressing to the vacuum-sealed container to make the Cr powder into a high-density, homogeneous material. The method is characterized in that the molded body is formed into a molded body, and then the molded body taken out from the container is sliced into plate bodies of a predetermined thickness, and then these plate bodies are subjected to mechanical processing to be used as a target for sputtering. A method for manufacturing a chrome target for sputtering.
属容器を加熱しながら真空引きすることを特徴とする、
特許請求の範囲第(1)項記載の製造方法。(2) During the vacuum sealing, the metal container filled with Cr powder is evacuated while being heated.
A manufacturing method according to claim (1).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31057186A JPS63162863A (en) | 1986-12-25 | 1986-12-25 | Manufacture of chromium target for sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31057186A JPS63162863A (en) | 1986-12-25 | 1986-12-25 | Manufacture of chromium target for sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63162863A true JPS63162863A (en) | 1988-07-06 |
Family
ID=18006839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31057186A Pending JPS63162863A (en) | 1986-12-25 | 1986-12-25 | Manufacture of chromium target for sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63162863A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5718778A (en) * | 1995-03-31 | 1998-02-17 | Hitachi Metals, Ltd. | Chromium target and process for producing the same |
CN103785838A (en) * | 2012-11-01 | 2014-05-14 | 宁波江丰电子材料有限公司 | Chromium target production method |
CN104439246A (en) * | 2013-09-13 | 2015-03-25 | 宁波江丰电子材料股份有限公司 | Chromium target production method |
JP2021006655A (en) * | 2019-06-28 | 2021-01-21 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method of sputtering target |
-
1986
- 1986-12-25 JP JP31057186A patent/JPS63162863A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5718778A (en) * | 1995-03-31 | 1998-02-17 | Hitachi Metals, Ltd. | Chromium target and process for producing the same |
CN103785838A (en) * | 2012-11-01 | 2014-05-14 | 宁波江丰电子材料有限公司 | Chromium target production method |
CN103785838B (en) * | 2012-11-01 | 2016-06-01 | 宁波江丰电子材料股份有限公司 | The making method of chromium target |
CN104439246A (en) * | 2013-09-13 | 2015-03-25 | 宁波江丰电子材料股份有限公司 | Chromium target production method |
JP2021006655A (en) * | 2019-06-28 | 2021-01-21 | 三菱マテリアル株式会社 | Sputtering target and manufacturing method of sputtering target |
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