CN103785838A - Chromium target production method - Google Patents
Chromium target production method Download PDFInfo
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- CN103785838A CN103785838A CN201210429639.2A CN201210429639A CN103785838A CN 103785838 A CN103785838 A CN 103785838A CN 201210429639 A CN201210429639 A CN 201210429639A CN 103785838 A CN103785838 A CN 103785838A
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Abstract
The invention relates to a chromium target production method. The method includes: firstly, providing chromium powder; secondly, placing the chromium powder into a vacuum sheath and vacuumizing; thirdly, performing sintering on the chromium powder in the vacuum sheath by hot isostatic pressing to form a chromium target; fourthly, after sintering is finished, cooling and detaching the vacuum sheath to take the chromium target out. By the chromium target production method, a mould is avoided in use, density and uniformity of internal organizational structure of the formed chromium target are superior to those of a chromium target formed by hot pressing, and purity of the chromium target can satisfy sputtering technology with increasing requirements.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of preparation method of chromium target.
Background technology
Vacuum splashing and plating is to be accelerated to fly under the effect of electric field by electronics in the process of substrate to bump with ar atmo, ionize out a large amount of argon ions and electronics, electronics flies to substrate, argon ion accelerates bombardment target under the effect of electric field, sputter a large amount of target atom, be neutral target atom (or molecule) and be deposited on film forming on substrate, and finally reach the object to substrate surface plated film.
In vacuum splashing and plating process, often can use chromium target.Early stage chromium target obtains by fusion casting, but the density of the chromium target that fusion casting forms is difficult to control.In order to overcome this problem, in industry, occur adopting the method for powder metallurgy to realize processing chromium target, this powder metallurgical technique is by producing chromium powder end (adding or do not add non-metal powder), implemented to be shaped and sintering in chromium powder end, making the processing method of chromium target.Powder metallurgy is because it has unique machinery, physical property, and these performances can realize porous, half fine and close or fully dense material and goods that traditional casting method cannot be made.
Be can also find the more information about powder metallurgical technique processing chromium target in the CN101249564A Chinese patent literature of (open day: on August 27th, 2008) at publication number.
In concrete chromium powder metallurgy process, generally by ready chromium powder end is contained in speciality mould, then be placed in vacuum hotpressing stove, first with certain pressure by chromium powder pressing, then be evacuated down to setting value, then intensification limit, limit pressurization, until pressure and temperature all reaches setting value, cooling with stove after heat-insulation pressure keeping a period of time, come out of the stove.Said process also claims hot pressing (Hot Pressing, HP).
But, realizing in hot pressing, the mould that need to match according to the size design of chromium target, more expensive and the easier loss of this mould, in addition, adopt the uniformity of the internal organizational structure of the chromium target of this method processing more and more higher sputtering technology that cannot meet the demands, purity also cannot meet the sputtering technology more and more higher to purity requirement.
In view of this, be necessary to propose in fact a kind of preparation method of new chromium target, to overcome the defect of prior art.
Summary of the invention
The problem that the present invention solves is to adopt existing heat pressing process in the process of making chromium target, due to the mould that need to match according to the size design of chromium target, and the more expensive and easier loss of this mould, and the uniformity that adopts the internal organizational structure of the chromium target of this method processing more and more higher sputtering technology that cannot meet the demands, purity also cannot meet the problem of the sputtering technology more and more higher to purity requirement.
For addressing the above problem, the invention provides a kind of preparation method of chromium target, comprising:
Chromium powder end is provided;
Chromium powder end is placed into vacuum canning and vacuumizes;
Adopt heat and other static pressuring processes to carry out sinter molding to the chromium powder end in vacuum canning, form chromium target;
Complete after sinter molding, carry out cooling and remove vacuum canning and take out chromium target.
Optionally, chromium powder end is placed into after vacuum canning, before carrying out heat and other static pressuring processes, also shuts described vacuum canning and draw the step of deaeration pipe from described vacuum canning, described in vacuumize step and complete by described deaeration pipe.
Optionally, after vacuumizing, the vacuum in described vacuum canning is less than or equal to 2 × 10
-3pa.
Optionally, the vacuum in described vacuum canning is less than or equal to 2 × 10
-3after Pa, also described vacuum canning is carried out to the step that limit heating edge vacuumizes.
Optionally, the step that described limit heating edge vacuumizes comprises: heat described vacuum canning to temperature and be more than or equal to 250 ℃ and be less than and equal after 500 ℃, be incubated, in described heating and insulating process, continue to vacuumize the vacuum making in vacuum canning and be less than or equal to 2 × 10
-3pa, carries out described sinter molding step afterwards.
Optionally, the time of described insulation is 3 hours～4 hours.
Optionally, described heat and other static pressuring processes design parameter is: the hip temperature that high temperature insostatic pressing (HIP) stove is set is for being more than or equal to 1200 ℃ and be less than or equal to 1300 ℃, the high temperature insostatic pressing (HIP) pressure of high temperature insostatic pressing (HIP) stove is set for being more than or equal to 130MPa and being less than or equal to 150MPa, and pressurize 4 hours～6 hours under this pressure.
Optionally, described vacuum canning adopts the stainless steel welding fabrication that thickness is 1.0mm～2.0mm.
Optionally, described stainless steel is mild steel, 304 stainless steels or 316L stainless steel.
Optionally, the purity at described chromium powder end is for being more than or equal to 99.5% and be less than or equal to 99.99%.
Compared with prior art, technical scheme of the present invention has the following advantages:
Chromium powder end is provided, chromium powder end is inserted and in vacuum canning, carried out high temperature insostatic pressing (HIP), between chromium atom, move, the connectivity gap of chromium intergranule becomes isolated closed pore, then, along with the further migration of chromium atom, the closed pore of chromium intergranule can disappear completely, forms the chromium target that density and intensity all improve.Wherein vacuum canning can make chromium powder end isolate with high temperature insostatic pressing (HIP) stove on the one hand, prevents from mutually polluting between chromium powder end and high temperature insostatic pressing (HIP) stove, to improve the purity of follow-up chromium target; On the other hand, carry out in the process of heat and other static pressuring processes, temperature and pressure is higher, must transmit high temperature insostatic pressing (HIP) power by the plastic deformation of vacuum canning, make the chromium powder end can be densified, otherwise, in the process of making chromium target, chromium powder end is easily pressed loose or is made the chromium target of formation densified inhomogeneous, moreover, can also prevent that chromium target is oxidized in heat and other static pressuring processes.Complete after sinter molding, carry out cooling and remove vacuum canning and take out chromium target, said method forms in chromium target process, avoid use mould, simultaneously, the density of the chromium target forming, the uniformity of internal organizational structure are better than the density of the chromium target that adopts hot pressing formation, the uniformity of internal organizational structure, and purity also can meet the sputtering technology more and more higher to purity requirement.
Accompanying drawing explanation
Fig. 1 is the flow chart of the preparation method of chromium target provided by the invention;
Fig. 2 is that the heat and other static pressuring processes that chromium powder end is carried out of the embodiment of the present invention forms chromium target schematic diagram.
The specific embodiment
Inventor finds and analyzes, and existing heat pressing process is generally that ready chromium powder end is contained in mould.Heat pressing process is unidirectional pressurization, can exceed on the one hand the pressure bearing limit of mould, on the other hand, causes the crystal grain at chromium powder end in all directions discontinuity, and the chromium target internal organizational structure of formation is even not, and crystallite dimension is thick.Moreover, adopt heat pressing process, because graphite jig is frangible, to the process of filling chromium powder end in graphite jig, for repeatedly filling on a small quantity, filling all can pollute chromium powder end at every turn, affects the purity of follow-up chromium target.
Inventor, through creative work, proposes a kind of preparation method of new chromium target, and the flow chart of the preparation method that Fig. 1 is chromium target provided by the invention, please refer to Fig. 1, and the preparation method of chromium target is specially,
Execution step S11, provides chromium powder end;
Execution step S12, is placed into chromium powder end vacuum canning and vacuumizes;
Execution step S13, adopts heat and other static pressuring processes to carry out sinter molding to the chromium powder end in vacuum canning, forms chromium target;
Execution step S14, completes after sinter molding, carries out cooling and removes vacuum canning and take out chromium target.
Below in conjunction with accompanying drawing, by specific embodiment, technical scheme of the present invention is carried out to clear, complete description.
First, execution step S11, provides chromium powder end.
In concrete manufacturing process, the purity of the chromium target forming after considering, preferably provides purity for being more than or equal to 99.5% and be less than or equal to 99.99% chromium powder end in this step.
In follow-up heat and other static pressuring processes, finally meeting produce the migration of chromium atom and form chromium target under surface tension effects.The transition process of chromium atom needs higher activation energy.Can improve activation energy by the granularity that reduces chromium powder end.; the particle diameter of chromium particle is less, and chromium specific area (gross area that specific area has for unit mass material) is larger, and chromium surface energy driving force is just larger; so just increase the motive force of whole technique, shortened chromium atom migration distance and caused the acceleration of whole technical process.
The number of mechanisms such as the migration of chromium atom may be by slippage, climb, diffusion, diffusion creep complete.Wherein, the diffusion for chromium atom playing a major role, the diffusion of chromium atom comprises the diffusion into the surface of chromium atom and the bulk diffusion of chromium atom, only have the bulk diffusion of chromium atom just can make chromium powder densification, diffusion into the surface can only change pore shape and can not cause approaching of particle centre-to-centre spacing, therefore can not realize chromium powder end densification process.Within the subsequent technique time, obtain the chromium target that density is high if want, chromium powder end particle system should meet: Dv/ (2a)
3=1, Dv is the volume diffusion coefficient of particle, and 2a is grain diameter.The order of magnitude of Dv is 10
-12cm
2/ s, chromium powder diameter need to be less than or equal to 1 μ m, and the specific area at chromium powder end need be more than or equal to 1.1m
2/ g.
With reference to figure 2, then, execution step S 12, is placed into chromium powder end vacuum canning 21 and vacuumizes.
On vacuum canning 21, be also provided with cover plate (not shown), if find that in operating process the powder in vacuum canning is inadequate, need to again add chromium powder end time, cover plate can be opened and added.And then pass upper cover plate carries out subsequent operation.
It should be noted that, chromium powder end is disposable packing in vacuum canning preferably, avoids chromium powder end too many and contaminated because packing the number of times of vacuum canning into, thereby improve the purity of follow-up chromium target.This step in concrete implementation, for avoiding powder to be drawn out of and to waste in vacuum, preferred first compacting chromium powder end.
Then, shut described vacuum canning and stay deaeration pipe.The technique of shutting can realize by argon arc welding.The described step that vacuumizes completes by described deaeration pipe.
Then, at room temperature start to vacuumize, to a certain extent, for example vacuum is less than or equal to 2 × 10
-3when Pa, start vacuum canning to heat.Until be heated to uniform temperature, be for example more than or equal to 250 ℃ and be less than or equal to after 500 ℃, carry out incubation step, in described heating and insulating process, continue to vacuumize, keep the vacuum in vacuum canning to be less than or equal to 2 × 10
-3pa.The object that above-mentioned limit heating edge vacuumizes is that heating makes the impurity in chromium powder end become gaseous state, is evacuated equipment discharge vacuum canning, the chromium powder end of having purified.Chromium powder end is after above-mentioned heating and incubation step, and baseset is formed bulk.Because the fusing point of chromium is very high, reach more than 2000 ℃, the inventor has analyzed the impurity in chromium powder end, is preferably greater than or equal to 250 ℃ and be less than or equal to 500 ℃, substantially can remove most impurity, can not cause again excessive power consumption.Secondly, in vacuum, the vacuum that vacuum canning keeps is less, and the density of the chromium target of follow-up formation is more even; If excessive, can cause the density of bulk material in jacket too small, the cost of continuous heat and other static pressuring processes after increasing, and, in subsequent technique, easily make chromium powder end be oxidized.The inventor finds, in the time that temperature retention time is 3 hours～4 hours, can realize and allow the internal temperature of whole material can reach uniformly design temperature, can make the easier formation chromium target of follow-up technique, and, can also save time of subsequent technique.In addition, can guarantee to remove the object of lower boiling impurity.It should be noted that, the vacuum in the present invention is the absolute pressure in given space, different with the concept of the conventional vacuum of understanding.
Continue with reference to figure 2, then, execution step S13, adopts heat and other static pressuring processes to carry out sinter molding to the chromium powder end in vacuum canning 21, forms chromium target.
After insulation in step S12 finishes, take out vacuum canning 21, keep holding one's breath under the state of its inner vacuum continuing, described in hold one's breath and refer to the duct occlusion of holding one's breath, make that vacuum canning is inner forms an airtight vacuum environment.Now the vacuum of vacuum canning is at least 2 × 10
-3pa.Afterwards, the vacuum canning of holding one's breath is placed in high temperature insostatic pressing (HIP) (Hot Isostatic Pressing, HIP) stove 23 and carries out high temperature insostatic pressing (HIP) step.
The inventor finds, adopts heat and other static pressuring processes can avoid on the one hand the grainiess generation gross segregation of the chromium target forming, thereby can improve processing performance and the mechanical performance of the chromium target after moulding.On the other hand, further eliminate the internal voids of chromium target blank, to form the chromium target that density is high, and the chromium target internal organizational structure forming is more even, crystallite dimension is more tiny.
Heat and other static pressuring processes is that with high-pressure inert gas or nitrogen, for example argon gas is medium, and the chromium powder end in vacuum canning is applied to every equal isostatic pressure in the high temperature insostatic pressing (HIP) stove of HTHP sealing.
Set forth the principle of formation chromium target in chromium powder end in the present invention below in conjunction with the principle of heat and other static pressuring processes.
In order to prevent in heat and other static pressuring processes, chromium powder in vacuum canning end is oxidized, and first high temperature insostatic pressing (HIP) stove is vacuumized to the vacuum of processing in high temperature insostatic pressing (HIP) stove and is less than or equal to 100Pa, then in high temperature insostatic pressing (HIP) stove, fills argon gas or nitrogen.The vacuum canning of holding one's breath 21 is directly put into high temperature insostatic pressing (HIP) stove 23 heats up and pressurization, by the vacuum canning of holding one's breath 21 the high temperature of high temperature insostatic pressing (HIP) stove 23 and each etc. all to pressure-acting under (arrow in Fig. 2 in representing high temperature insostatic pressing (HIP) stove 23 each wait all to pressure) generation plastic deformation.This plastic deformation meeting causes the grain boundary area between chromium particle to increase, thereby expand the contact-making surface between chromium particle, surface tension is increased, and then produce a large amount of migrations of chromium atom, the migration of chromium atom equally by dislocation slippage, climb, the number of mechanisms such as diffusion, diffusion creep completes.Wherein, what play a major role is still the diffusion of chromium atom, space between chromium particle is disappeared completely,, make the voidage between chromium target be approximately equal to zero, diffusion stops, and heat and other static pressuring processes finishes, realize the high compaction of chromium target blank, formed density and reach more than 98% evanohm target.
But the concrete technology parameter that will obtain adopting high temperature insostatic pressing (HIP) method to process the chromium target that meets above-mentioned standard but and be not easy.Above-mentioned parameter mainly comprises: the temperature of high temperature insostatic pressing (HIP), the programming rate of high temperature insostatic pressing (HIP), the pressure of hot constant static-pressure and the temperature retention time of high temperature insostatic pressing (HIP), and the disproportionate relation of above-mentioned parameter.But, the inventor is through finding and creative research, this heat and other static pressuring processes design parameter is: hip temperature is for being more than or equal to 1200 ℃ and be less than or equal to 1300 ℃, programming rate is for being more than or equal to 5 ℃/min and being less than or equal to 20 ℃/min, be preferably 10 ℃/min～15 ℃/min, the high temperature insostatic pressing (HIP) pressure producing in high temperature insostatic pressing (HIP) stove is more than or equal to 130Mpa and is less than or equal to 150Mpa, is incubated 4 hours～6 hours under above-mentioned hip temperature and high temperature insostatic pressing (HIP) pressure.
The rising of hip temperature is conducive to the diffusion of chromium atom equally, and the voidage of the chromium target inside of follow-up formation reduces, and density and intensity improve constantly.If but hot pressing temperature exceedes 1300 ℃, not only wastes fuel, very uneconomical, but also can impel the chromium target of follow-up formation be recrystallized and the performance of follow-up chromium target is worsened.If hot pressing temperature is too low, lower than 1200 ℃, chromium target blank is difficult to produce moulding distortion and forms chromium target.
In addition, in the high temperature range of 1200 ℃～1300 ℃, the diffusion of chromium atom is still take bulk diffusion as main, and in the temperature rise period, the diffusion of chromium atom is take diffusion into the surface as main.Therefore the programming rate of the present embodiment is 5 ℃/min～20 ℃/min.If the programming rate of heat and other static pressuring processes is too fast, the furnace temperature of high temperature insostatic pressing (HIP) is not easy diffusion, causes the furnace temperature of high temperature insostatic pressing (HIP) stove inhomogeneous, produces furnace temperature deviation, if the programming rate of heat and other static pressuring processes is excessively slow, heating-up time is long, the adverse effect producing is as follows: chromium powder end is in densified process, because chromium grain surface is subject to uniform surface tension, the space of intergranule is by rhombus, the shapes such as wedge angle type are contracted to final circle gradually, circular space can make the inside homogeneous grain size of the chromium target of follow-up formation, therefore, long meeting of heating-up time makes the diffusion into the surface of chromium atom too much, surface tension unbalance stress and change the shape in the space of chromium target, thereby affect the densified effect of chromium target but also affected the performance of chromium target.Therefore be soon as far as possible warming up to 1200 ℃～1300 ℃ to create the conditions of bulk diffusion.
High temperature insostatic pressing (HIP) pressure adopts the every equal pressure that for example argon gas of inert gas or nitrogen are medium, the diffusion that makes between chromium crystal to produce larger moulding deformation and cause more large-area chromium atom, make follow-up formation chromium target internal structure pile up tightr, therefore heat and other static pressuring processes can carry out densified to chromium powder end.If the high temperature insostatic pressing (HIP) pressure in the present invention is more than or equal to 150MPa, easily produce the waste of process costs; If the pressure that heat and other static pressuring processes adopts deficiency 130MPa, makes chromium powder end be difficult to produce moulding distortion equally.
The present invention need to be incubated 3 hours under the scope of above-mentioned hip temperature and hot constant static-pressure pressure～and 4 hours.If temperature retention time is too short, densification process is difficult for accurately controlling equally; If temperature retention time exceedes 4 hours, again there is recrystallization, crystal grain can be grown up and be exceeded the size of the inner crystal grain of follow-up chromium target, and temperature retention time is long, waste heat energy.
In the heat and other static pressuring processes of the present embodiment, vacuum canning can make chromium powder end isolate with high temperature insostatic pressing (HIP) stove on the one hand, prevents from mutually polluting between chromium powder end and high temperature insostatic pressing (HIP) stove, to improve the purity of follow-up chromium target; On the other hand, carry out in the process of heat and other static pressuring processes, temperature and pressure is higher, must transmit high temperature insostatic pressing (HIP) power by the plastic deformation of vacuum canning, make the chromium powder end can be densified, otherwise, in the process of making chromium target, chromium powder end is easily pressed loose or is made the chromium target of formation densified inhomogeneous, moreover, can also prevent that chromium target is oxidized in heat and other static pressuring processes.
Continue with reference to figure 2, complete after sinter molding, execution step S14, carries out cooling and removes vacuum canning 21 and take out chromium target.
After forming chromium target with heat and other static pressuring processes, the furnace temperature of high temperature insostatic pressing (HIP) stove is down to 200 ℃ of following and pressure releases gradually, opens fire door vacuum canning 21 is taken out.Chilling temperature it should be noted that, if, higher than 200 ℃, can cause damage to high temperature insostatic pressing (HIP) stove when taking-up.
After vacuum canning 21 is taken out, remove vacuum canning 21 and take out chromium target.The dismounting of this step can realize by chemical method or mechanical means.The chromium target taking out also needs through methods such as turning, line cuttings afterwards, thereby makes the chromium target of final needs.Through detecting, adopt the density of the chromium target of above-mentioned steps making to be at least 98%, and internal organizational structure is even, phase is not obviously dominant, grain size (being less than 100 microns) meets the requirement of sputtering technology, and the purity of chromium target also meets the more and more higher sputtering technology of purity requirement.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible variation and modification to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection domain of technical solution of the present invention.
Claims (10)
1. a preparation method for chromium target, is characterized in that, comprising:
Chromium powder end is provided;
Chromium powder end is placed into vacuum canning and vacuumizes;
Adopt heat and other static pressuring processes to carry out sinter molding to the chromium powder end in vacuum canning, form chromium target;
Complete after sinter molding, carry out cooling and remove vacuum canning and take out chromium target.
2. the preparation method of chromium target according to claim 1, it is characterized in that, chromium powder end is placed into after vacuum canning, before carrying out heat and other static pressuring processes, also shut described vacuum canning and draw the step of deaeration pipe from described vacuum canning, described in vacuumize step and complete by described deaeration pipe.
3. the preparation method of chromium target according to claim 1, is characterized in that, after vacuumizing, the vacuum in described vacuum canning is less than or equal to 2 × 10
-3pa.
4. the preparation method of chromium target according to claim 3, is characterized in that, the vacuum in described vacuum canning is less than or equal to 2 × 10
-3after Pa, also described vacuum canning is carried out to the step that limit heating edge vacuumizes.
5. the preparation method of chromium target according to claim 4, it is characterized in that, the step that described limit heating edge vacuumizes comprises: heat described vacuum canning to temperature and be more than or equal to 250 ℃ and be less than and equal after 500 ℃, be incubated, in described heating and insulating process, continue to vacuumize the vacuum making in vacuum canning and be less than or equal to 2 × 10
-3pa, carries out described sinter molding step afterwards.
6. the preparation method of chromium target according to claim 5, is characterized in that, the time of described insulation is 3 hours～4 hours.
7. the preparation method of chromium target according to claim 1, it is characterized in that, described heat and other static pressuring processes design parameter is: the hip temperature that high temperature insostatic pressing (HIP) stove is set is for being more than or equal to 1200 ℃ and be less than or equal to 1300 ℃, the high temperature insostatic pressing (HIP) pressure of high temperature insostatic pressing (HIP) stove is set for being more than or equal to 130MPa and being less than or equal to 150MPa, and pressurize 4 hours～6 hours under this pressure.
8. the preparation method of chromium target according to claim 1, is characterized in that, described vacuum canning adopts the stainless steel welding fabrication that thickness is 1.0mm～2.0mm.
9. the preparation method of chromium target according to claim 8, is characterized in that, described stainless steel is mild steel, 304 stainless steels or 316L stainless steel.
10. the preparation method of chromium target according to claim 1, is characterized in that, the purity at described chromium powder end is for being more than or equal to 99.5% and be less than or equal to 99.99%.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104227000A (en) * | 2014-09-06 | 2014-12-24 | 中信锦州金属股份有限公司 | Production method of chromium target |
| CN104480437A (en) * | 2014-12-30 | 2015-04-01 | 山东昊轩电子陶瓷材料有限公司 | Production method for integrally formed cylindrical target |
| CN105671483A (en) * | 2014-11-20 | 2016-06-15 | 宁波江丰电子材料股份有限公司 | Manufacturing method for tungsten-silicon target material |
| CN111230096A (en) * | 2020-03-23 | 2020-06-05 | 宁波江丰电子材料股份有限公司 | Alloy sputtering target material and preparation method and application thereof |
| CN111763914A (en) * | 2020-06-12 | 2020-10-13 | 厦门虹鹭钨钼工业有限公司 | Method for controlling content of non-metal elements in tungsten-silicon target material |
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| CN111763914A (en) * | 2020-06-12 | 2020-10-13 | 厦门虹鹭钨钼工业有限公司 | Method for controlling content of non-metal elements in tungsten-silicon target material |
| CN111922350A (en) * | 2020-09-22 | 2020-11-13 | 西安斯瑞先进铜合金科技有限公司 | Preparation method of low-hydrochloric-acid-insoluble metal chromium powder |
| CN111922350B (en) * | 2020-09-22 | 2021-01-01 | 西安斯瑞先进铜合金科技有限公司 | Preparation method of low-hydrochloric-acid-insoluble metal chromium powder |
| CN111922351A (en) * | 2020-09-23 | 2020-11-13 | 西安斯瑞先进铜合金科技有限公司 | Preparation method of high-purity low-oxygen metal chromium powder |
| CN111922351B (en) * | 2020-09-23 | 2021-01-01 | 西安斯瑞先进铜合金科技有限公司 | Preparation method of high-purity low-oxygen metal chromium powder |
| CN116460407A (en) * | 2023-04-21 | 2023-07-21 | 西安嘉业航空科技有限公司 | Copper alloy and alloy steel workpiece and hot isostatic pressing diffusion connection method thereof |
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