CN107337355A - TFT substrate film plating process - Google Patents
TFT substrate film plating process Download PDFInfo
- Publication number
- CN107337355A CN107337355A CN201710657168.3A CN201710657168A CN107337355A CN 107337355 A CN107337355 A CN 107337355A CN 201710657168 A CN201710657168 A CN 201710657168A CN 107337355 A CN107337355 A CN 107337355A
- Authority
- CN
- China
- Prior art keywords
- plated film
- tft substrate
- shutter
- metal
- film shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation
Abstract
Present invention is disclosed a kind of TFT substrate film plating process, and plated film shutter is bonded with the coated surface of TFT substrate, and metal edge frame deposition gap is reserved with the plated film shutter；Plate surface, which is blocked, in metal carries out metal film deposition processing；Plated film shutter is removed, the metal edge frame for completing TFT substrate makes.The advantage of the invention is that while metal is plated, plated film is bonded substantially with TFT, directly required figure can be formed on TFT substrate surface, directly around all " gold-tinted processing procedures ", the problems such as construction input, the production capacity that can effectively solve gold-tinted workshop are low, product size is single, pollution, and it is finally reached the effect needed for product.
Description
Technical field
The present invention relates to the ultra-thin liquid crystal substrate manufacturing process of TFT.
Background technology
With the exploitation and utilization of the ultra-thin crystal liquid substrate Metal-border part coated products of TFT, conventional art be
On the basis of the whole face plated film of substrate, superficial film is removed by " gold-tinted " processing procedure, i.e., adopted the whole face plating metal films of TFT substrate
Processed with following processing step：Metal film deposition, light blockage coating, exposure, development, etching, demoulding；Above-mentioned technological process exist with
Lower problem：
1st, gold-tinted processing procedure uses acid solution to handle when removing the Metal of inactive area, and acid solution is conductive to surface ITO
Film layer can produce destruction, and properties of product are impacted；
2nd, " gold-tinted " workshop input cost is high, and processing dimension is more single；
3rd, technological process is complicated, exception easily occurs, and production capacity is low；
4th, production process can produce substantial amounts of sewage (high concentration discards nitric acid), and environmental pollution is serious.
The content of the invention
The technical problems to be solved by the invention are to realize that one kind can reduce production cost, and the high TFT of production efficiency surpasses
Thin crystal liquid substrate production technology.
To achieve these goals, the technical solution adopted by the present invention is：TFT substrate film plating process：
Plated film shutter is bonded with the coated surface of TFT substrate, metal edge frame deposition is reserved with the plated film shutter
Gap；
Plate surface, which is blocked, in metal carries out metal film deposition processing；
Plated film shutter is removed, the metal edge frame for completing TFT substrate makes.
The plated film shutter for hollow out deposition gap metallic plate, it is described deposition gap arrangement with
The metal edge frame shape of TFT substrate is identical.
The deposition slot edge for the binding face that the plated film shutter is bonded with TFT substrate is provided with oblique angle, the deposition seam
The oblique angle of gap both sides forms the open out "eight" shape structure become larger.
The plated film shutter is stainless steel.
The binding face flat smooth of the plated film shutter.
The advantage of the invention is that while metal is plated, plated film is bonded substantially with TFT, can be directly on TFT substrate surface
Figure needed for formation, directly around all " gold-tinted processing procedures ", construction input, the production capacity that can effectively solve gold-tinted workshop are low, product
The problems such as size is single, pollution, and it is finally reached the effect needed for product.
Brief description of the drawings
The content of every width accompanying drawing expression in description of the invention and the mark in figure are briefly described below：
Fig. 1 is plated film type shielding plate structure schematic diagram；
Fig. 2 is the deposition gap close-up schematic view of plated film shutter；
Overall structure diagram when Fig. 3 is plated film；
Mark in above-mentioned figure is：1st, plated film shutter；2nd, gap is deposited.
Embodiment
Plated film shutter 1 (mask) is directly bonded in metal-coated membrane with TFT coated surfaces, shutter and TFT substrate plated film
After the fitting of face, in the non-coated surface of TFT substrate, using strong, soft magnet (soft magnet is), shutter and TFT substrate are consolidated
It is fixed, prevent TFT substrate from being shifted with shutter；Because soft magnet surface is rougher, to prevent magnet from scratching TFT substrate,
It is (overall during plated film to increase the aluminium sheet after flexible the Teflon cloth and 0.5mm of one layer of 0.3mm thickness among magnet and TFT substrate
Structure such as Fig. 3)；TFT substrate does not need plated film part to stop using plated film shutter 1 during plated film, makes film deposition on mask,
Plated film part is needed to be deposited directly to TFT substrate surface through the deposition gap 2 of plated film shutter 1.
Plated film shutter 1 uses stainless steel, and stainless steel intensity is big, is unlikely to deform, and is adapted to process personnel's operation
And recycle, and stainless steel surface is smooth, the generation of TFT glass substrates will not be damaged during be bonded substantially, material
Density is big, and in vacuum coating, discharge quantity is small, survivable vacuum coating environment.
Plated film shutter choice of material is stainless steel 430, and to ensure its intensity, thickness is chosen for 0.4mm -0.6mm, too
Thick and heavy amount is too big, and operation intensity be able to can increase, too thin to be easily deformed, to prevent shutter from deforming, the requirement phase to operating personnel
To higher, shutter storage or turnover are all horizontal positioned with case body special, need to be by shutter and special when personnel need operation
Casing integrally erects, and tilts 83 ° -85 °, and personnel vertically pick up, and guarantee does not deform.
As shown in Fig. 2 to ensure metal coating effects and quality, it is ensured that local Metal-border (metal edge frame)
Precision, the hollow out position of plated film shutter 1 is designed to inclination angle, it is ensured that plating film edge is full.
The present invention is exemplarily described above in conjunction with accompanying drawing, it is clear that present invention specific implementation is not by aforesaid way
Limitation, as long as the improvement of the various unsubstantialities of inventive concept and technical scheme of the present invention progress is employed, or without changing
Enter and the design of the present invention and technical scheme are directly applied into other occasions, within protection scope of the present invention.
Claims (5)
1.TFT substrate film coating methods, it is characterised in that：
Plated film shutter is bonded with the coated surface of TFT substrate, metal edge frame deposition gap is reserved with the plated film shutter；
Plate surface, which is blocked, in metal carries out metal film deposition processing；
Plated film shutter is removed, the metal edge frame for completing TFT substrate makes.
A kind of 2. plated film shutter applied to TFT crystal liquid substrate film plating process, it is characterised in that：The plated film shutter is tool
Have hollow out deposition gap metallic plate, it is described deposition gap arrangement it is identical with the metal edge frame shape of TFT substrate.
3. plated film shutter according to claim 2, it is characterised in that：What the plated film shutter was bonded with TFT substrate
The deposition slot edge of binding face is provided with oblique angle, and the oblique angle of the deposition gap both sides forms open out " eight " become larger
Character form structure.
4. plated film shutter according to claim 3, it is characterised in that：The plated film shutter is stainless steel, no
The thickness for steel material of becoming rusty is 0.4mm -0.6mm, and the size of shutter changes according to the size of converted products.
5. the plated film shutter according to any one of claim 2-4, it is characterised in that：The fitting of the plated film shutter
Face flat smooth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710657168.3A CN107337355A (en) | 2017-08-03 | 2017-08-03 | TFT substrate film plating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710657168.3A CN107337355A (en) | 2017-08-03 | 2017-08-03 | TFT substrate film plating process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107337355A true CN107337355A (en) | 2017-11-10 |
Family
ID=60217730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710657168.3A Pending CN107337355A (en) | 2017-08-03 | 2017-08-03 | TFT substrate film plating process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107337355A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114908317A (en) * | 2022-06-29 | 2022-08-16 | 芜湖长信科技股份有限公司 | TFT-LCD metal frame processing technology |
| CN115739572A (en) * | 2021-09-03 | 2023-03-07 | 曼德电子电器有限公司 | Manufacturing method of mask plating jig, mask plating jig and mask plating method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102234759A (en) * | 2010-04-29 | 2011-11-09 | 亚洲太阳科技有限公司 | Coating method for manufacturing thin film solar cell |
| CN203128642U (en) * | 2013-03-11 | 2013-08-14 | 钱超 | Evaporation cover for OLED (organic light emitting diode) coating |
| CN205856590U (en) * | 2016-06-07 | 2017-01-04 | 光宏光电技术（深圳）有限公司 | A kind of mask plate for being deposited with OLED display panel |
-
2017
- 2017-08-03 CN CN201710657168.3A patent/CN107337355A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102234759A (en) * | 2010-04-29 | 2011-11-09 | 亚洲太阳科技有限公司 | Coating method for manufacturing thin film solar cell |
| CN203128642U (en) * | 2013-03-11 | 2013-08-14 | 钱超 | Evaporation cover for OLED (organic light emitting diode) coating |
| CN205856590U (en) * | 2016-06-07 | 2017-01-04 | 光宏光电技术（深圳）有限公司 | A kind of mask plate for being deposited with OLED display panel |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115739572A (en) * | 2021-09-03 | 2023-03-07 | 曼德电子电器有限公司 | Manufacturing method of mask plating jig, mask plating jig and mask plating method |
| CN114908317A (en) * | 2022-06-29 | 2022-08-16 | 芜湖长信科技股份有限公司 | TFT-LCD metal frame processing technology |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171110 |