TWI671663B - Conductive substrate for touch panel and method for producing conductive substrate for touch panel - Google Patents

Abstract

Provided is a conductive substrate for a touch panel, comprising: an insulator substrate; a bottom metal layer disposed on at least one side of the insulator substrate and containing nickel; a copper thin film layer disposed on the bottom metal layer; and The copper plating film is disposed on the copper thin film layer, and has a surface opposite to the copper thin film layer and another surface on the opposite side to the one surface. In a depth range from the surface of the other surface of the copper plating film to 0.3 μm, the sulfur concentration is 10 mass ppm to 150 mass ppm, and the surface roughness (Ra) of the other surface of the copper plating film is 0.01 μm. It is 0.15 μm or more.

Description

Conductive substrate for touch panel, and manufacturing method of conductive substrate for touch panel

The present invention relates to a conductive substrate for a touch panel and a method for manufacturing a conductive substrate for a touch panel.

The electrostatic capacitance type touch panel detects the change in the electrostatic capacity caused by an object close to the surface of the panel to convert the position information of the close object on the surface of the panel into an electrical signal. Since the conductive substrate for a touch panel used in an electrostatic capacitive touch panel is provided on the surface of a display, the conductive layer material used in the conductive substrate for a touch panel is required to have a low reflectance, and it is difficult to be used. Recognize.

Therefore, as the conductive layer material used in the conductive substrate for a touch panel, a material having a low reflectance and hard to be seen can be used and formed on a transparent substrate or a transparent film. For example, Patent Document 1 discloses a transparent conductive film for a touch panel in which an ITO (indium tin oxide) film is formed on a polymer film as a transparent conductive film.

In recent years, displays equipped with a touch panel are becoming larger. In response to this, a conductive substrate for a touch panel needs to be enlarged. However, because ITO has a high resistance value and causes signal degradation, there is a problem that it is not suitable for large-scale panels.

Therefore, in order to suppress the resistance of the conductive substrate, it is being studied that a metal foil can be used as the conductive layer (for example, Patent Documents 2 and 3).

[Patent Document 1] Japanese Patent Laid-Open No. 2003-151358

[Patent Document 2] Japanese Patent Application Laid-Open No. 2011-018194

[Patent Document 3] Japanese Patent Laid-Open No. 2013-069261

However, when a metal foil such as copper is used as the conductive layer contained in the conductive substrate for a touch panel, the metal foil has a metallic luster, and therefore, the surface reflection of the metal foil may reduce the visibility of the display problem.

In view of the foregoing problems of the prior art, in one aspect of the present invention, it is an object of the present invention to provide a conductive substrate for a touch panel including a conductive layer using a metal and suppressing light reflection caused by the conductive layer.

In order to solve the above problems, according to one aspect of the present invention, a conductive substrate for a touch panel is provided, which includes: an insulator substrate; and a bottom metal layer, which is disposed on at least one side of the insulator substrate and contains nickel; A copper thin film layer disposed on the underlying metal layer; and a copper plating film disposed on the copper thin film layer, having a side opposite to the copper thin film layer and another side on the opposite side to the one surface; In the depth range of 0.3 μm from the surface of the other surface of the copper plating film, the sulfur concentration is 10 mass ppm or more and 150 mass ppm or less, and the surface roughness (Ra) of the other surface of the copper plating film is 0.01 μm or more and 0.15. μm or less.

According to an aspect of the present invention, a conductive substrate for a touch panel including a conductive layer using a metal and suppressing light reflection caused by the conductive layer can be provided.

10A, 10B, 20, 201, 202, 40‧‧‧ conductive substrate for touch panel

11, 111, 112‧‧‧ insulator substrate

11a, 111a, 112a ‧‧‧ 1st main plane

11b, 111b, 112b ‧‧‧ 2nd main plane

12, 121, 122, 22, 221, 222, 421, 422‧‧‧ underlying metal layer

13, 131, 132, 23, 231, 232, 431, 432‧‧‧ copper film layer

14, 141, 142, 24, 241, 242, 441, 442‧‧‧coated copper coating

30‧‧‧Multilayer conductive substrate for touch panel

50‧‧‧Roll-up vacuum coating device

51‧‧‧shell

52‧‧‧ Take-up roll

53‧‧‧ cylindrical roller

54a ~ 54d‧‧‧Sputtered cathode

55a‧‧‧feedforward roller

55b‧‧‧Feedback roller

56a, 56b‧‧‧ tension roller

57‧‧‧ take-up roller

58a ~ 58h‧‧‧Guide roller

59‧‧‧Gas supply means

60a, 60b‧‧‧vacuum pump

61‧‧‧heater

62a, 62b‧‧‧vacuum gauge

[FIG. 1A] A cross-sectional view of a conductive substrate for a touch panel according to an embodiment of the present invention.

[FIG. 1B] A cross-sectional view of a conductive substrate for a touch panel according to an embodiment of the present invention.

[FIG. 2A] A structural explanatory diagram of a patterned conductive substrate for a touch panel according to an embodiment of the present invention.

[Fig. 2B] A cross-sectional view of the A-A 'plane in Fig. 2A.

[FIG. 3A] An explanatory diagram of the structure of a laminated conductive substrate for a touch panel including a grid-shaped wiring according to an embodiment of the present invention.

[Fig. 3B] A cross-sectional view taken along the B-B 'plane in Fig. 3A.

[FIG. 4] A cross-sectional view of a conductive substrate for a touch panel including grid-shaped wirings according to an embodiment of the present invention.

[FIG. 5] An explanatory diagram of a roll-to-roll sputter apparatus according to an embodiment of the present invention.

Hereinafter, an embodiment of a conductive substrate for a touch panel and a method for manufacturing a conductive substrate for a touch panel of the present invention will be described.

(Conductive substrate for touch panel, laminated conductive substrate for touch panel)

The conductive substrate for a touch panel according to the present embodiment may include an insulator substrate, an underlying metal layer, a copper thin film layer, and a copper plating film.

The underlying metal layer is arranged on at least one side of the insulator base material and may contain nickel. The copper thin film layer may be disposed on the underlying metal layer. The copper plating film may be disposed on the copper thin film layer, and may have one surface opposite to the copper thin film layer and the other surface on the opposite side of the one surface.

The sulfur concentration in the depth range from the surface of the other surface of the copper plating film to 0.3 μm can be 10 mass ppm or more and 150 mass ppm or less, and the surface roughness (Ra) of the other surface of the copper plating film can be set. It is set to 0.01 μm or more and 0.15 μm or less.

In addition, the conductive substrate for a touch panel according to this embodiment may be a substrate having a base metal layer and a copper thin film on a surface of an insulator substrate before patterning the base metal layer, a copper thin film layer, and a copper plating film. Layer, and a copper-plated substrate. In addition, the conductive substrate for a touch panel of this embodiment may be a substrate that is a patterned substrate metal layer, a copper thin film layer, and a copper plating film, that is, a wiring substrate. Furthermore, the conductive substrate for a touch panel after patterning the underlying metal layer, the copper thin film layer, and the copper plating film includes an area of the insulator base material that is not covered by the underlying metal layer or the like, that is, the insulator is exposed. Area of the substrate.

Hereinafter, each component included in the conductive substrate for a touch panel according to this embodiment will be described.

The insulator substrate is not particularly limited, and any material such as a glass substrate or various resin substrates can be used. From the viewpoint of usability and the like, the insulator substrate is preferably a resin substrate. Therefore, as the insulator substrate, for example, a polyamide-based film, a polyester-based film (polyethylene terephthalate-based film), or a polynaphthalene-based film can be preferably used. Any of resin substrates selected from polyethylene naphthalate film, cycloolefin film, polyimide film, and polycarbonate film, and the resin substrate is preferably Resin film.

In addition, when the display is arranged on the display, it is preferable that the display has high visibility. Therefore, it is preferable that the insulator substrate has high light transmission. For this reason, the total light transmittance of the insulator substrate is preferably 30% or more, more preferably 60% or more, and even more preferably 90% or more. In addition, the total light transmittance of the insulator base material referred to here means the total light transmittance on the insulator base material alone. The total light transmittance of the insulator substrate can be evaluated in accordance with JISK 7361-1 (2011), for example.

The shape of the insulator base material is not particularly limited, but it is preferably, for example, a plate-like shape. In this case, the insulator substrate may have a main plane and another main plane opposite to the one main plane. The principal plane refers to the widest planar portion of the insulator substrate.

The thickness of the insulator substrate is not particularly limited, and can be arbitrarily selected according to the strength, capacitance, light transmittance, etc. required when the conductive substrate for a touch panel is used. The insulator substrate is preferably a film-like insulator film. Therefore, the thickness of the insulator substrate can be, for example, 10 μm or more and 200 μm or less. In particular, the thickness of the insulator substrate is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. In the case of a use for a touch panel, for example, especially in an application where the entire thickness of a display needs to be thin, the thickness of the transparent substrate is preferably 20 μm or more and 50 μm or less.

Next, the underlying metal layer will be described.

By forming an underlying metal layer between the insulator substrate and a copper layer including a copper thin film layer and a copper plating film, the adhesion between the insulator substrate and the copper layer can be improved. Peeling of the layer from the insulator substrate is suppressed.

In addition, the copper layer may use copper as a main component, and since it has a metallic luster, in a conductive substrate in which a copper layer is directly arranged on an insulator substrate, light incident from the insulator substrate side is reflected on the surface of the copper layer. Case. Therefore, when the When a copper-based conductive substrate is placed on a display, the visibility of the display may be reduced. In contrast, when an underlying metal layer is disposed between the insulator substrate and the copper layer, the underlying metal layer can suppress light reflection caused by the copper layer, and when it is arranged on the display, the display can be suppressed. Visibility is reduced.

The bottom metal layer may be formed on at least one main plane of the insulator substrate. Further, as described later, it may be formed on two principal planes of one principal plane and the other principal plane of the insulator substrate.

The material constituting the underlying metal layer is not particularly limited, and may be based on the adhesion between the insulator substrate and the copper layer, or the degree of suppression of light reflection on the surface of the copper layer, or the use environment (e.g. humidity) of the conductive substrate for a touch panel Or temperature).

As a material constituting the underlying metal layer, a material containing Ni can be preferably used from the viewpoint of improving the adhesion between the insulator substrate and the copper layer and suppressing light reflection on the surface of the copper layer. The Ni-containing material is preferably, for example, a metal containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. The underlying metal layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

Furthermore, the underlying metal layer may contain a metal alloy containing Ni and at least one selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. metal. In this case, the underlying metal layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as a metal alloy that is Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, that is, Ni alloy, For example, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Cu-Ni-Fe alloy, or Ni-Cu-Cr alloy.

As described above, the underlying metal layer may be formed on at least one main plane of the insulator base material. However, in order not to reduce the light transmittance of the conductive substrate for a touch panel, it is preferable that no bonding is arranged between the insulator base material and the underlying metal layer. Agent. That is, the underlying metal layer is preferably formed directly on the insulator base material without interposing an adhesive.

The method for forming the underlying metal layer is not particularly limited, and it is preferable to form the film by a dry plating method. As the dry plating method, for example, a sputtering method, a vapor deposition method, or an ion plating method can be preferably used.

Furthermore, when the underlying metal layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, it is possible to add carbon, oxygen, and carbon atoms to the ambient gas at the time of forming the underlying metal layer in advance. A gas of one or more elements selected from oxygen, hydrogen, and nitrogen is added to the underlying metal layer. For example, when carbon is added to the underlying metal layer, carbon monoxide gas and / or carbon dioxide gas may be added to the ambient gas during dry plating beforehand; when oxygen is added, the environment during dry plating may be added beforehand. Oxygen is added to the gas; in the case of adding hydrogen, hydrogen and / or water can be added in advance to the ambient gas during dry plating; in the case of nitrogen, it can be added to the ambient gas during dry plating in advance. Add nitrogen.

The gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas as an ambient gas gas when performing dry plating. The inert gas is not particularly limited, and for example, argon gas can be preferably used.

By forming the underlying metal layer by a dry plating method, the adhesion between the insulator substrate and the underlying metal layer can be particularly improved. In addition, since the underlying metal layer may contain, for example, a metal as its main component, its adhesion to the copper layer is also high. Therefore, by using Disposing the underlying metal layer formed by the dry plating method between the layers can suppress the peeling of the copper layer from the insulator base material in particular.

The thickness of the underlying metal layer is not particularly limited. For example, it is preferably 3 nm or more and 50 nm or less, more preferably 3 nm or more and 35 nm or less, and still more preferably 3 nm or more and 33 nm or less.

The bottom metal layer has a function of suppressing light reflection of the copper layer, but when the thickness of the bottom metal layer is thin, there may be a case where the light reflection of the copper layer cannot be sufficiently suppressed. Here, in order to more reliably suppress the reflection of the copper layer, as described above, the thickness of the underlying metal layer is preferably 3 nm or more.

The upper limit of the thickness of the underlying metal layer is not particularly limited, but if it is too thick, the film-forming time or the etching time when wiring is formed will be increased, and the cost will increase. Therefore, as described above, the thickness of the underlying metal layer is preferably 50 nm or less, more preferably 35 nm or less, and most preferably 33 nm or less.

Next, the copper thin film layer will be described.

The copper thin film layer may be formed on the underlying metal layer. However, in order not to reduce the light transmittance of the conductive substrate for a touch panel, it is preferable that no adhesive is disposed between the underlying metal layer and the copper thin film layer. That is, the copper thin film layer is preferably formed directly on the underlying metal layer without using an adhesive.

The method for forming the copper thin film layer is not particularly limited, but, for example, it is preferable to form the film by a dry plating method. As the dry plating method, for example, a sputtering method, a vapor deposition method, or an ion plating method can be preferably used. When a copper thin film layer is formed by a dry plating method, it can be directly formed on the underlying metal layer without using an adhesive.

The thickness of the copper thin film layer is not particularly limited, but in order to exert the function as a power supply layer when a copper plating film is formed, the thickness is preferably 10 nm or more, and more preferably 50 nm or more. The upper limit of the thickness of the copper thin film layer is not particularly limited. However, as described above, since the copper thin film layer is formed by, for example, a dry plating method, it is preferably 300 nm or less from the viewpoint of productivity. It is more preferably 200 nm or less.

Next, a copper plating film is demonstrated.

A copper plating film may be formed on a copper thin film layer. The copper plating film is preferably formed directly on the copper thin film layer without an adhesive.

The method for forming the copper plating film is not particularly limited, but, for example, it is preferable to form the film by a wet plating method. As the wet plating method, a plating method is preferably used. Further, as described above, the copper-plated coating film may have one surface facing the copper thin film layer and the other surface located on the opposite side of the one surface.

In addition, the sulfur concentration can be set to 10 mass ppm or more and 150 mass ppm or less in a depth range from the surface of the other surface of the copper plating film to 0.3 μm. The surface roughness (Ra) of the other surface of the copper-plated coating film can be set to be 0.01 μm or more and 0.15 μm or less.

As shown in FIG. 1A described later, the other surface of the copper plating film may be located outside the conductive substrate for a touch panel of this embodiment, for example. In addition, since the main component of the copper-plated coating is copper, when the copper-plated coating is used as a conductive substrate for a touch panel, the other surface of the copper-plated coating will specularly reflect light (orthogonal reflection). Make an impact. Therefore, in the conductive substrate for a touch panel of this embodiment, by making the surface roughness of the other surface of the copper-plated film to be 0.01 μm or more, light on the other surface of the copper-plated film can be diffusely reflected (randomly reflected) ), On the other hand, the gloss of the other surface of the copper-plated coating is eliminated, thereby suppressing the influence on visibility. In particular, from the viewpoint of sufficiently increasing the ratio of the diffuse reflection of the other surface of the copper plating film, the surface roughness of the other surface of the copper plating film is preferably 0.05 μm or more.

The upper limit of the surface roughness of the other surface of the copper-plated film is not particularly limited, but if it is too large, for example, when the copper-plated film is etched, etc., the adhesion between the mask and the copper-plated film It will decrease and it will be difficult to pattern it into the desired shape. Therefore, the surface roughness of the other surface of the copper plating film is preferably 0.15 μm or less, and more preferably 0.1 μm or less.

The surface roughness (Ra) here is based on JIS B 0601. As a measuring method, for example, a stylus method or an optical method can be used for evaluation.

As a method of limiting the surface roughness of the other surface of the copper plating film to the above range, a method of etching the other surface of the copper plating film can be mentioned. In addition, before the etching process, when the sulfur concentration in the depth range from the other surface of the copper plating film to 0.3 μm is 10 mass ppm or more, the other surface of the copper plating film can be etched to etch the copper plating film. The surface roughness (Ra) of the other side of is set in the above range. Among them, if the sulfur concentration in the depth range from the other side of the copper-plated film to 0.3 μm exceeds 150 mass ppm, the copper-plated film may become brittle. In this way, the copper-plated film may collapse or may be removed from the touch panel. It is not preferable that peeling occurs with a conductive substrate. Therefore, as described above, the sulfur concentration in the depth range from the other surface of the copper plating film to 0.3 μm is preferably 10 mass ppm or more and 150 mass ppm or less. In particular, the sulfur concentration in the depth range from the other surface of the copper plating film to 0.3 μm is more preferably 50 mass ppm or more and 100 mass ppm or less.

In addition, by etching the other surface of the copper-plated film, a part of the other surface of the copper-plated film can be removed by etching to form a recess, and the other surface of the copper-plated film is formed. Fine unevenness. Therefore, the sulfur concentration in the depth range of 0.3 μm from the highest portion of the surface of the other surface of the copper plating film, that is, the portion remaining as a convex portion after the etching treatment, preferably satisfies the above range.

In addition, the sulfur concentration of the portion exceeding 0.3 μm from the other surface of the copper plating film is not particularly limited, and for example, the sulfur concentration of the entire copper plating film may be in the above range.

The conditions for the electroplating treatment when forming the copper-plated coating are not particularly limited, and various conditions in common methods can be adopted. The sulfur-containing copper plating film can be formed using, for example, a sulfur-containing copper plating solution, and as the sulfur-containing copper plating solution, for example, a copper plating solution to which an organic compound containing a sulfur atom is added can be used.

In addition, by controlling the content (addition amount) of sulfur atom-containing organic compounds in the copper plating solution as the plating solution, the current density, or the transfer speed, the depth can be from the other side to 0.3 μm. Both formed copper-plated films having the above-mentioned sulfur concentration. The conveying speed here refers to a speed at which an object to be plated (base material) on which an underlayer metal layer and a copper thin film layer are formed on the surface of an insulator base material is supplied and conveyed to a plating tank.

The content of the sulfur atom-containing organic compound in the copper plating solution used in the formation of the copper plating film is not particularly limited. However, for example, it is preferably 2 mass ppm or more and 25 mass ppm or less, more preferably 5 mass. ppm or more and 15 mass ppm or less. The reason is that by setting the content of the sulfur atom-containing organic compound in the copper plating solution to 2 mass ppm or more and 25 mass ppm or less, the depth from the other surface of the copper plating film to 0.3 μm can be more easily achieved. The sulfur concentration within the range is limited to the above range.

There is no particular limitation on the substance that can be used as an organic compound including a sulfur atom. However, for example, 3- (benzothiazolyl-2-thio) propylsulfonic acid can be used. (3- (benzothiazolyl-2-thio) propyl sulfonic acid) and its sodium salt, 3-mercaptopropane-1-sulfonic acid and its sodium salt, ethylene dithiodipropylsulfonic acid and its sodium salt, and bis ( P-sulfophenyl) disulfide and its 2 sodium salts, bis (4-sulfobutyl) disulfide and its 2 sodium salts, bis (3-sulfo-2-hydroxypropyl) disulfide and its 2 Sodium salt, bis (3-sulfopropyl) disulfide and its 2 sodium salt, bis (2-sulfopropyl) disulfide and its 2 sodium salt, methyl- (w-sulfopropyl) sulfide and Its 2 sodium salt, methyl- (w-sulfopropyl) trisulfide and its 2 sodium salt, thioglycolic acid, thiophosphoric acid-o-ethyl-bis (w-sulfopropyl) -ester (thiophosphoric acid -ortho-ethyl-bis (w-sulfopropyl) -ester) and its 2 sodium salts, thiophosphoric acid-tris (w-sulfopropyl) -ester and its 2 sodium salts, thiophosphoric acid-tris (w-sulfopropyl) ) -Esters and their 3 sodium salts and the like.

As described above, after the copper plating film is formed, the surface roughness of the other surface of the copper plating film can be set to the above range by etching the other surface of the copper plating film. The etching method of the other surface of a copper plating film is not specifically limited, For example, it can carry out by using an etchant. The etchant used is not particularly limited, and a soft etchant for copper can be preferably used.

The thickness of the copper layer consisting of a copper thin film layer and a copper plating film formed on the underlying metal layer is not particularly limited, and it can be based on the resistance value required by the conductive substrate for a touch panel or the patterned wiring width, etc. Make any selection. Among them, the thickness of the copper layer composed of the copper thin film layer and the copper plating film is preferably 0.5 μm or more and 4.1 μm or less. The thickness of the copper layer is more preferably 0.5 μm or more and 3 μm or less.

The reason for this is that by setting the thickness of the copper layer to 0.5 μm or more, the resistance value of the conductive substrate for a touch panel can be sufficiently reduced, and the wiring pattern can be suppressed from being higher than expected when the copper layer is patterned. When the width is narrow, or when the wire is disconnected. In addition, by setting the film thickness of the copper layer to 4.1 μm or less, it is possible to suppress the area of the side portion of the copper layer from being reduced, Light reflection from the side of the copper layer. Furthermore, it is possible to suppress "side etching when a copper layer is etched to form a wiring pattern".

Further, an arbitrary layer may be provided on the conductive substrate for a touch panel according to this embodiment. For example, a blackening layer may be provided on the copper-plated film.

By setting the surface roughness of the other surface of the copper-plated coating to the above range, specular reflection on the surface of the copper-plated coating can be suppressed, and the gloss on the other surface of the copper-plated coating can be eliminated, thereby suppressing the influence on visibility. Moreover, by providing a blackening layer, the influence of a copper plating film on visibility can be suppressed further.

From the viewpoint of suppressing light reflection on the surface of the copper-plated coating film, the blackening layer preferably contains nickel. That is, as a material constituting the blackening layer, a material containing Ni (nickel) is preferably used. The Ni-containing material is preferably, for example, a metal containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. The blackening layer may contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

In addition, as a material constituting the blackening layer, a metal alloy may be contained. The metal alloy contains Ni and a material selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. At least one metal. In this case, the blackening layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as the metal alloy containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, that is, Ni alloy, for example, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Cu-Ni-Fe alloy, or Ni-Cu-Cr alloy are preferably used.

The bottom metal layer and the blackening layer may be the same material or different materials. However, as described later, in order to pattern the underlying metal layer, copper layer, and blackened layer by etching, The reactivity of the underlying metal layer, the copper layer, and the blackened layer with respect to the etchant is preferably substantially the same, and more preferably the same. For this reason, it is particularly preferred that the underlying metal layer and the blackening layer are made of the same material.

The method of forming the blackened layer is not particularly limited, and the film can be formed by a dry plating method in the same manner as the underlying metal layer, and can also be formed by a wet plating method.

The thickness of the blackening layer is not particularly limited, and can be arbitrarily selected in accordance with the reflectance (normal reflectance) required for the conductive substrate for a touch panel.

Next, a configuration example of the conductive substrate for a touch panel according to this embodiment will be described.

As described above, the conductive substrate according to this embodiment includes the insulator base material, the underlying metal layer, the copper thin film layer, and the copper plating film, and can be configured as follows: a base metal layer and a copper thin film layer are sequentially laminated on the insulator base material. , Copper-plated coating.

A specific configuration example will be described below with reference to FIGS. 1A and 1B. FIGS. 1A and 1B show examples of cross-sectional views of surfaces of the conductive substrate according to the present embodiment that are parallel to the lamination direction of the insulator substrate, the underlying metal layer, the copper thin film layer, and the copper plating film.

For example, as in the conductive substrate 10A for a touch panel shown in FIG. 1A, a structure may be formed in which a bottom metal layer 12 and a copper thin film are sequentially laminated on the first main plane 11a side of the insulator base material 11 one by one. Layer 13 and copper-plated film 14. In FIG. 1A, the copper-plated coating film 14 has one surface 14 a opposite to the copper thin film layer 13 and the other surface 14 b located on the opposite side of the one surface 14 a.

In addition, as in the conductive substrate 10B for a touch panel shown in FIG. 1B, a structure may be formed in which the first base plane 11a side and the second main plane 11b side of the insulator base material 11 are layer by layer and sequentially Laminate bottom metal layers 121, 122, copper thin film layers 131, 132, plating Copper coatings 141 and 142. In FIG. 1 (B), the copper plating film 141 (142) has a surface 141a (142a) opposite to the copper thin film layer 131 (132), and another surface 141b (142b) located on the opposite side of the surface 141a (142a).

Furthermore, as described above, in the conductive substrate for a touch panel shown in FIGS. 1A and 1B, a blackening layer not shown in the figure may be further provided. When a blackening layer is provided, for example, the conductive substrate for a touch panel of FIG. 1A may be disposed on the other surface 14 b of the copper plating film 14. In the conductive substrate for a touch panel of FIG. 1B, for example, a blackened layer may be disposed on the other surface 141 b of the copper plating film 141 and / or on the other surface 142 b of the copper plating film 142.

In the conductive substrate for a touch panel of the present embodiment, by arranging the underlying metal layer 12 (121, 122) between the insulator base material 11 and the copper thin film layer 13 (131, 132), the slave base material 11 can be aligned. Reflection of light incident on the side copper thin film layers 13 (131, 132) is suppressed. In this case, there is no particular limitation on the normal reflectance of the insulating substrate body 11 of the underlying metal layer 12 (121, 122). However, for example, the average normal reflectance in the range of wavelengths from 400 nm to 700 nm is preferred. It is 30% or less, and more preferably 25% or less.

When the average regular reflectance of light having a wavelength of 400 nm or more and 700 nm or less of the insulating substrate body 11 of the bottom metal layer 12 (121, 122) is 30% or less, for example, when used as a conductive substrate for a touch panel, Reflection of light from the outside or light from the display is sufficiently suppressed. Therefore, it is preferable because the visibility of the display is hardly lowered.

The measurement of the reflectance can be performed by irradiating light to the underlying metal layer 12 (121, 122) from the insulator base material 11 side.

Specifically, for example, as shown in FIG. 1A, the first When the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are laminated in this order on the main plane 11a side, the second metal plane 11b of the insulator base material 11 can be irradiated with light from the base metal layer 12 The side is irradiated with light and measured.

During the measurement, light with a wavelength of 400 nm or more and 700 nm or less is changed, for example, at a wavelength of 1 nm, and the base metal layer 12 (121, 122) is irradiated through the insulating substrate 11 and the average value of the measured values is set. This is the average regular reflectance of light in the range of 400 nm to 700 nm of the insulating substrate body 11 of the underlying metal layer 12 (121, 122).

Moreover, in the conductive substrate for a touch panel of this embodiment, the regular reflectance of the surface of the other surface 14b (141b, 142b) of the copper-plated coating 14 (141, 142) is not particularly limited, and can be determined according to touch The performance required for the conductive substrate for a panel is arbitrarily selected. Among these, the average regular reflectance of the surface of the other surface 14b (141b, 142b) of the copper-plated coating 14 (141, 142) at a wavelength of 400 nm to 700 nm is preferably 30% or less, more preferably 20% the following.

This is because the average regular reflectance of light having a wavelength of 400 nm or more and 700 nm or less on the surface of the other surface 14b (141b, 142b) of the copper-plated coating 14 (141, 142) is 30% or less. When a conductive substrate is used, reflection of light from the outside or light from a display can be sufficiently suppressed. Therefore, it is preferable because the visibility of the display is hardly lowered.

The measurement of the reflectance described above can be performed by irradiating the other surface 14b (141b, 142b) of the copper-plated coating film 14 (141, 142) with light.

Specifically, for example, as shown in FIG. When the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are laminated in this order on the main plane 11a side, the other surface 14b of the copper plating film 14 can be irradiated with light and measured.

The measurement can be performed by changing the light at a wavelength of, for example, 1 nm in a range of 400 nm to 700 nm, and irradiating the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142). Then, the average value of the values measured at this time is taken as the average regular reflectance of light having a wavelength of 400 nm or more and 700 nm or less on the surface of the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142).

As described above, in the conductive substrate for a touch panel according to this embodiment, a blackened layer can be formed on the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142). In addition, the regular reflectance of the surface of the blackened layer is not particularly limited. For example, the average regular reflectance in a range of a wavelength of 400 nm to 700 nm is preferably 30% or less, and more preferably 20% or less.

When the specular reflectance of light having a wavelength of 400 nm or more and 700 nm or less is 30% or less, for example, when used as a conductive substrate for a touch panel, reflection of light from the outside or light from a display can be sufficiently suppressed. . Therefore, it is preferable because the visibility of the display is hardly lowered.

The measurement of the regular reflectance of the blackened layer can be performed by irradiating the blackened layer with light.

Specifically, for example, when a blackened layer is formed on the other surface 14b of the copper plating film 14 in the conductive substrate 10A for a touch panel shown in FIG. 1A, the surface of the blackened layer that faces the copper plating film 14 can be formed. The opposite surface was irradiated with light and measured.

During the measurement, light having a wavelength of 400 nm or more and 700 nm or less can be separated, for example, The wavelength was changed to 1 nm, and the blackened layer was irradiated. The average value of the measured values was set to the average regular reflectance of light in the range of 400 nm to 700 nm in the wavelength of the surface of the blackened layer.

In the conductive substrate for a touch panel of this embodiment, the regular reflectance of light measured on the surface of the underlying metal layer or the surface of the blackened layer is preferably in the above range, and particularly, the surface of the underlying metal layer and black The regular reflectance of light on the surface of the formation layer satisfies the above range.

The conductive substrate for a touch panel according to this embodiment can be used for a touch panel, for example. When used for a touch panel, the underlying metal layer, the copper thin film layer, and the copper plating film included in the conductive substrate for a touch panel according to the present embodiment are preferably patterned. The underlying metal layer, the copper thin film layer, and the copper-plated coating film can be patterned, for example, according to a desired wiring pattern. The underlying metal layer, the copper thin-film layer, and the copper plating film are preferably patterned into the same shape. When a blackening layer is provided, the blackening layer is preferably patterned into the same shape as the underlying metal layer or the like.

So far, the conductive substrate for a touch panel according to this embodiment has been described. However, the above-mentioned conductive substrate for a touch panel may be laminated in a plurality of pieces to form a laminated conductive substrate for a touch panel. When the conductive substrate for a touch panel is laminated, the underlying metal layer, the copper thin film layer, and the copper plating film contained in the conductive substrate for a touch panel are preferably patterned as described above. When a blackening layer is provided, the blackening layer is preferably patterned.

Particularly when used for a touch panel, it is preferable that the conductive substrate for a touch panel or the laminated conductive substrate for a touch panel includes a grid-shaped wiring.

Here, a case where two conductive substrates for a touch panel are laminated to form a laminated conductive substrate having a grid-like wiring is taken as an example, and the laminated front substrate is laminated using FIG. 2A and FIG. 2B. A structural example of the pattern shape of the underlying metal layer, the copper thin film layer, and the copper plating film formed on the conductive substrate for a touch panel will be described.

FIG. 2A shows one of the two conductive substrates for a touch panel, which constitutes a laminated conductive substrate for a touch panel with a grid-shaped wiring, and is connected to the insulator substrate 11 from the upper side. A diagram in which the conductive substrate 20 for a touch panel is viewed in a direction perpendicular to the principal plane. Fig. 2B is a cross-sectional view taken along the line A-A 'in Fig. 2A.

As shown in the conductive substrate 20 for a touch panel shown in FIGS. 2A and 2B, the patterned base metal layer 22, the copper thin film layer 23, and the copper plating film 24 on the insulator substrate 11 may have the same shape. For example, the patterned copper plating film 24 has a plurality of linear patterns (copper plating film patterns 24A to 24G) as shown in FIG. 2A. The plurality of linear patterns may be parallel to the Y axis in the figure and The X-axis directions in the figure are arranged at intervals from each other. At this time, when the insulator base material 11 has a quadrangular shape as shown in FIG. 2 (A), the pattern of the copper plating film (copper plating film patterns 24A to 24G) may be arranged parallel to one side of the insulator substrate 11, for example .

Further, as described above, when the patterned underlying metal layer 22 and the patterned copper thin film layer 23 are patterned into the same shape as the patterned copper plating film 24, the insulator substrate 11 is exposed between the patterns. The first principal plane 11a.

When a blackened layer is disposed on the copper-plated coating film 24, the blackened layer and the underlying metal layer 22 may be patterned in the same shape. In this case, the insulator substrate 11 is exposed between the patterns. First main plane 11a.

The pattern forming method of the patterned bottom metal layer 22, the copper thin film layer 23, and the copper plating film 24 shown in FIGS. 2A and 2B is not particularly limited. For example, forming a copper-plated quilt After the film 24, a mask having a shape corresponding to the pattern formed on the copper-plated coating film 24 can be disposed and etched to form a pattern. The etching solution to be used is not particularly limited, and can be arbitrarily selected according to materials constituting the underlying metal layer, the copper thin film layer, and the copper plating film. For example, the etching solution may be changed for each layer, and the underlying metal layer, the copper thin film layer, and the copper plating film may be simultaneously etched using the same etching solution. The same applies to the case where a blackening layer is provided.

Next, by laminating two patterned conductive substrates for a touch panel such as the above-mentioned bottom metal layer, a laminated conductive substrate for a touch panel can be formed. The laminated conductive substrate for a touch panel will be described with reference to FIGS. 3A and 3B. FIG. 3A is a view of the laminated conductive substrate 30 for a touch panel viewed from the upper side, that is, the upper surface side along the laminated direction of two conductive substrates for a touch panel, and FIG. 3B shows a line BB ′ in FIG. 3A. Section view.

As shown in FIG. 3B, the laminated conductive substrate 30 for a touch panel can be obtained by laminating a conductive substrate 201 for a touch panel and a conductive substrate 202 for a touch panel. In addition, the conductive substrates 201 and 202 for touch panels can be configured as follows: a patterned bottom metal layer 221 (222) is formed on the first main plane 111a (112a) of the insulator base material 111 (112). ), A copper thin film layer 231 (232), and a copper plating film 241 (242). The patterned base metal layers 221 (222), copper thin film layers 231 (232), and copper-plated coatings 241 (242) of the conductive substrates 201 and 202 for touch panels can be electrically conductive with the above-mentioned touch panels. In the case of the flexible substrate 20, patterning is performed in such a manner that it has a plurality of linear patterns.

Next, the laminated conductive substrate for a touch panel shown in FIG. 3B is laminated as follows: a first main plane 111a of an insulator base 111 of a conductive substrate 201 for a touch panel and a conductive substrate for another touch panel Second main body of the insulator substrate 112 of the flexible substrate 202 The plane 112b faces.

Furthermore, the lamination may be performed by inverting one conductive substrate 201 for a touch panel upside down, and touching the second main plane 111b of the insulator substrate 111 of one conductive substrate 201 for a touch panel with another. The second principal plane 112b of the insulator base material 112 of the conductive substrate 202 for a panel faces each other. In this case, the arrangement is the same as that of FIG. 4 described later.

When two conductive substrates for a touch panel are laminated, as shown in FIG. 3A and FIG. 3B, they can be laminated as follows: one patterned copper-plated coating 241 of the conductive substrate 201 for a touch panel and another piece of touch The patterned copper plating film 242 of the panel conductive substrate 202 intersects. Specifically, for example, in FIG. 3A, a patterned copper-plated film 241 of the conductive substrate 201 for a touch panel may be arranged such that the longitudinal direction of the pattern is parallel to the X-axis direction in the figure. Next, another patterned copper-plated film 242 of the conductive substrate 202 for a touch panel may be arranged such that the longitudinal direction of the pattern is parallel to the Y-axis direction in the figure.

Note that FIG. 3A is a view as viewed in the lamination direction of the laminated conductive substrate 30 for a touch panel as described above, so only the uppermost portions of the conductive substrates 201 and 202 for each touch panel are shown. Patterned copper-plated films 241, 242. In the laminated conductive substrate for a touch panel shown in FIGS. 3A and 3B, the patterned underlying metal layers 221 and 222 and the copper thin film layers 231 and 232 are also the same as the patterned copper plating films 241 and 242. picture of. For this reason, the patterned bottom metal layers 221 and 222 and the copper thin film layers 231 and 232 are also grid-like like the patterned copper plating films 241 and 242.

The method of bonding the two laminated conductive substrates for a touch panel is not particularly limited, and for example, bonding and fixing can be performed using an adhesive or the like.

As described above, by laminating one conductive substrate 201 for a touch panel and another conductive substrate 202 for a touch panel, a touch panel for a touch panel having a grid-like wiring as shown in FIG. 3A can be manufactured. Laminated conductive substrate 30.

3A and 3B show examples in which linear wirings are combined to form a grid-like wiring (wiring pattern), but the invention is not limited to this configuration, and the wiring constituting the wiring pattern may have any shape. For example, the shape of the wiring forming the grid-like wiring pattern can be designed into various shapes such as zigzag lines (zigzag straight lines), so that there is no ripple (interference) with the image of the display .

Here, an example of “producing a laminated conductive substrate having a grid-like wiring by laminating two conductive substrates for a touch panel” has been described, but a (laminated) conductive substrate having a grid-like wiring is prepared. The method is not limited to this form. For example, the base metal layers 121 and 122, the copper thin film layers 131 and 132, and the copper-plated films 141 and 142 are formed on the first main plane 11a and the second main plane 11b of the insulator substrate 11 as shown in FIG. 1B. The laminated conductive substrate 10B for a touch panel may be formed as a conductive substrate including grid-shaped wiring.

In this case, for example, the underlying metal layer 121, the copper thin film layer 131, and the copper plating film 141 laminated on the first main plane 11a side of the insulator base material 11 are patterned as "the Y-axis direction in Fig. 1B is the same as A pattern of a plurality of linear shapes parallel to the vertical direction of the paper surface ". Furthermore, the underlying metal layer 122, the copper thin film layer 132, and the copper plating film 142 laminated on the second main plane 11b side of the insulator base material 11 are patterned into a plurality of linear shapes parallel to the X-axis direction in FIG. 1B "picture of. The patterning can be performed by, for example, etching as described above.

Accordingly, as in the conductive substrate 40 for a touch panel shown in FIG. 4, the patterned copper thin film layer 431 is formed on the first main plane 11 a side of the insulator base material 11. The patterned copper thin film layer 432 and the copper plating film 442 formed on the copper plating film 441 and the second main plane 11b side can form a conductive substrate including grid-shaped wiring. Further, as shown in FIG. 4, the underlying metal layers 421 and 422, the copper thin film layers 431 and 432, and the copper plating films 441 and 442 are also in a grid shape.

In addition, FIG. 3 and FIG. 4 show examples in which a blackening layer is not provided. However, as described above, a blackening layer may be provided on the upper surface of the copper plating film, and the blackening layer may be patterned to match the underlying metal layer. Same shape.

As described above, according to the conductive substrate (laminated) for a touch panel of the present embodiment, the surface roughness of the other surface of the copper plating film can be set within a specific range as described above. Therefore, regular reflection of light on the surface of the copper-plated film can be suppressed. In addition, since the underlying metal layer is disposed between the copper thin film layer and the insulator base material, it is possible to suppress regular reflection of the light incident on the copper thin film layer surface through the insulating base material.

Furthermore, the conductive substrate for a touch panel (laminate) of this embodiment has a copper layer consisting of a copper thin film layer and a copper plating film, and this copper layer can function as a conductive layer. In this way, the conductive substrate for a touch panel according to this embodiment can reduce the resistance value by containing a conductive layer using a metal.

(Manufacturing method of conductive substrate for touch panel, manufacturing method of laminated conductive substrate for touch panel)

Next, a method for manufacturing a conductive substrate for a touch panel and a configuration example of a laminated conductive substrate for a touch panel according to this embodiment will be described.

The method for manufacturing a conductive substrate for a touch panel according to this embodiment may include the following steps.

An underlayer metal layer forming step of forming an underlayer metal layer containing nickel on at least one side of an insulator substrate.

A copper thin film layer forming step of forming a copper thin film layer on the underlying metal layer.

A copper plating film forming step of forming a copper plating film on a copper thin film layer, the copper plating film having one surface opposite to the copper thin film layer and the other surface on the opposite side of the one surface.

Next, in a depth range from the surface of the other surface of the copper plating film to 0.3 μm, the sulfur concentration can be set to 10 mass ppm or more and 150 mass ppm or less.

The surface roughness (Ra) of the other surface of the copper-plated coating film can be set to be 0.01 μm or more and 0.15 μm or less.

Hereinafter, a method for manufacturing a conductive substrate for a touch panel and a method for manufacturing a laminated conductive substrate for a touch panel according to this embodiment will be described. However, matters other than those described below can be used in combination with the touch panel described above. In the case of using a conductive substrate and a laminated conductive substrate for a touch panel, the same configuration is used, and therefore description thereof is omitted.

The insulator base material supplied to the underlying metal layer forming step may be prepared in advance. The type of the insulator base material used is not particularly limited, and as described above, any material such as a glass substrate or various resin substrates can be used. Since materials which are particularly suitable for use have already been described, description thereof will be omitted. If necessary, the insulator base material may be cut to an arbitrary size in advance.

Next, the step of forming an underlying metal layer is a step of forming an underlying metal layer containing nickel on an insulator substrate.

As shown in FIG. 1A, the bottom metal layer may be formed on at least one main plane of the insulator substrate 11, for example, the first main plane 11 a. As shown in FIG. 1B, the underlying metal layers 121 and 121 can be formed on both the first main plane 11 a and the second main plane 11 b of the insulator base material 11. 122. When both the first main plane 11a and the second main plane 11b of the insulator base material 11 form an underlying metal layer, the underlying metal layer may be simultaneously formed on both the principal planes. Alternatively, after forming the underlying metal layer on any one of the main planes, the underlying metal layer may be formed on the other main plane.

The material constituting the underlying metal layer is not particularly limited, and may be based on the adhesion of the insulator substrate and the copper layer (copper thin film layer and copper plating film), the degree of suppression of light reflection on the surface of the copper layer, or conductivity with respect to the touch panel The degree of stability of the use environment (for example, humidity or temperature) of the substrate is arbitrarily selected. The materials which can be preferably used as the "material constituting the underlying metal layer" have already been described, and therefore description thereof is omitted here.

The method for forming the underlying metal layer is not particularly limited. For example, as described above, the film can be formed by a dry plating method. As the dry plating method, for example, a sputtering method, a vapor deposition method, or an ion plating method can be preferably used.

When the underlying metal layer contains one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen, the carbon gas, oxygen, and A gas of one or more elements selected from hydrogen and nitrogen is added to the underlying metal layer. For example, when carbon is added to the underlying metal layer, carbon monoxide gas and / or carbon dioxide gas may be added to the ambient gas during dry plating beforehand; when oxygen is added, the dry plating may be added beforehand. Oxygen is added to the ambient gas; in the case of hydrogen, hydrogen and / or water can be added to the ambient gas during dry plating in advance; in the case of nitrogen, the Add nitrogen to the ambient gas.

The gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas as an ambient gas when performing dry plating. The inert gas is not particularly limited, and for example, argon gas can be preferably used.

When the underlying metal layer is formed by a sputtering method, as the target, a target containing a metal type constituting the underlying metal layer can be used. When the underlying metal layer includes an alloy, a target can be used for each metal type contained in the underlying metal layer, and an alloy can be formed on the surface of the film-formed body such as an insulator base material, or the underlying metal layer can be used in advance. Targets in which the contained metal is alloyed.

The underlying metal layer can be preferably formed using, for example, a roll-up vacuum coating apparatus 50 shown in FIG. 5.

Taking the case where the roll-type vacuum coating apparatus 50 is used as an example, the steps for forming the underlying metal layer will be described.

FIG. 5 shows a configuration example of the roll-type vacuum coating apparatus 50.

The roll-type vacuum coating apparatus 50 includes a case 51 that accommodates most of its constituent components.

In FIG. 5, the shape of the casing 51 is shown as a rectangular parallelepiped, but the shape of the casing 51 is not particularly limited. The shape of the casing 51 can be designed into any shape according to the installation location of the device stored in the casing 51 or the pressure resistance performance. For example, the shape of the casing 51 may be a cylindrical shape.

Among them, in order to remove the residual gas irrelevant to film formation at the start of film formation, the inside of the housing 51 is preferably decompressible to 10 ^-3 Pa or less, and more preferably decompressible to 10 ^-4 Pa or less. In addition, the inside of the casing 51 does not need to be fully decompressed to the above-mentioned pressure, and may be configured to "decompress only the lower region in the figure in which the cylindrical roller 53 described later is arranged to be decompressed to the above-mentioned pressure".

Inside the housing 51 can be arranged: a take-off roll 52, a cylindrical roll 53, a sputtering cathode 54a to 54d, a feed-forward roll 55a, a back-feed roll 55b, and a tension roll 56a for supplying a substrate for "forming a bottom metal layer" , 56b, take-up roller 57. In addition, a base material on which a base metal layer is formed In addition to the above-mentioned rollers, a guide roller 58a to 58h, a heater 61, or the like may be arbitrarily provided on the conveying path of the vehicle.

The unwinding roller 52, the cylindrical roller 53, the feedforward roller 55a, and the winding roller 57 may be provided with power generated by a servo motor. The unwinding roller 52 and the take-up roller 57 can maintain the tension balance of the substrate on which the underlying metal layer is formed by torque control of a powder clutch or the like.

The structure of the cylindrical roller 53 is also not particularly limited. For example, the surface of the cylindrical roller 53 is preferably plated with hard chrome, and the refrigerant or the warm medium provided from the outside of the casing 51 can be circulated and adjusted to the inside. Roughly constant temperature.

The tension rollers 56a and 56b are preferably, for example, hard chromium plated on the surface and provided with a tension sensor.

The surfaces of the feedforward roller 55a, the feedforward roller 55b, or the guide rollers 58a to 58h are also preferably plated with hard chromium.

The sputtering cathodes 54 a to 54 d are preferably of a magnetron cathode type and are arranged to face the cylindrical roller 53. The size of the sputtered cathodes 54a to 54d is not particularly limited, but the size of the sputtered cathodes 54a to 54d along the width direction of the substrate on which the underlying metal layer is formed is preferably larger than that of the substrate on which the underlying metal layer is formed. width.

The substrate on which the underlying metal layer is formed is transferred to a roll-type vacuum coating device 50 as a roll-type vacuum film forming device, and the underlying metal layer is formed by sputtering cathodes 54a to 54d opposite to the cylindrical roller 53. Film formation.

In the case where the underlying metal layer is formed using the roll-type vacuum coating device 50, a specific target is mounted on the sputtering cathodes 54a to 54d, and the vacuum pumps 60a and 60b are used to The inside of the apparatus is evacuated. This apparatus is provided with a base material for forming a base metal layer on the unwinding roll 52. Then, a sputtering gas such as argon is introduced into the casing 51 by the gas supply means 59. At this time, it is preferable to adjust the flow rate of the sputtering gas and the opening degree of the pressure adjustment valve provided between the vacuum pump 60b and the casing 51 so that the inside of the device is maintained at, for example, 0.13 Pa to 13 Pa, and film formation is performed. .

The gas supply means 59 may include a liquefied gas cylinder (not shown) that supplies gas according to each gas type of the sputtering gas to be supplied. In addition, the liquefied gas cylinder and the housing 51 may be configured as shown in the figure according to each gas type, for example: a mass flow controller (MFC), a valve, or the like may be provided so as to allow sputtering to be supplied. The gas flow is adjusted.

The housing 51 may be configured, for example, by providing vacuum gauges 62 a and 62 b to vacuum the inside of the housing 51 when the inside of the housing 51 is evacuated or the sputtering gas is supplied to the inside of the housing 51. Degree adjustment.

In this state, the substrate is conveyed from the take-off roll 52 at a speed of, for example, 0.5 m to 10 m per minute, and at the same time, power is supplied by a sputtering DC power source connected to the sputtering cathodes 54a to 54d to perform sputtering. Plating discharge. Accordingly, continuous film formation of a desired underlying metal layer can be performed on the substrate.

By forming the underlying metal layer using the dry plating method as described above, the adhesion between the insulator substrate and the underlying metal layer can be particularly improved. In addition, since the underlying metal layer may contain a metal as a main component, for example, the adhesion to the copper layer is also high. Therefore, by disposing the underlying metal layer between the insulator base material and the copper layer, peeling of the copper layer can be particularly suppressed.

The thickness of the underlying metal layer is not particularly limited, but is preferably 3 nm or more And 50 nm or less, more preferably 3 nm or more and 35 nm or less, still more preferably 3 nm or more and 33 nm or less.

Next, a copper thin film layer forming step will be described.

The copper thin film layer can be formed on the underlying metal layer as described above, and is preferably formed directly on the underlying metal layer without interposing an adhesive.

In the copper thin film layer forming step, the method for forming the copper thin film layer is not particularly limited, and for example, it is preferable to form a film by a dry plating method. When the copper thin film layer is formed by a dry plating method, it can be directly formed on the underlying metal layer without interposing an adhesive.

As the dry plating method, for example, a sputtering method, a vapor deposition method, or an ion plating method can be preferably used. In particular, since it is easy to control the film thickness, a sputtering method is preferably used.

When the copper thin film layer is formed by a sputtering method, for example, it is preferable to perform the film formation using the above-mentioned roll-type vacuum coating apparatus 50. The structure of the roll-type vacuum coating apparatus has already been described, so the description is omitted here.

When the copper thin film layer is formed using the roll-type vacuum coating device 50, a copper target is mounted on the sputtering cathodes 54a to 54d, and an insulator base material in which an underlying metal layer is formed in advance is set on a take-out roll. 52 on. Then, the inside of the apparatus is evacuated by the vacuum pumps 60a and 60b. Thereafter, a sputtering gas is introduced into the casing 51 by the gas supply means 59. At this time, it is preferable to adjust the flow rate of the sputtering gas and the opening degree of the pressure adjustment valve provided between the vacuum pump 60b and the casing 51 to maintain the inside of the device at, for example, 0.13 Pa to 13 Pa, and perform film formation.

In this state, the substrate forming the copper thin film layer is conveyed from the take-off roll 52 at a speed of, for example, 1 m to 20 m per minute, and simultaneously passes through the sputtering cathodes 54a to 54d. The connected sputtering DC power supply is used to supply power for sputtering discharge. Accordingly, continuous film formation of a desired copper thin film layer can be performed on a substrate.

The thickness of the copper thin film layer is not particularly limited, but it is preferably 10 nm or more, and more preferably 50 nm or more, in order to exert the function of a power supply layer when a copper plating film is formed. The upper limit value of the thickness of the copper thin film layer is not particularly limited. However, since the copper thin film layer can be formed by a dry plating method as described above, it is preferably 300 nm or less from the viewpoint of productivity. It is preferably below 200 nm.

Next, a copper plating film formation step is demonstrated.

A copper plating film may be formed on a copper thin film layer. The copper plating film is also preferably formed directly on the copper thin film layer without interposing an adhesive.

The method for forming the copper plating film is not particularly limited, but it is preferable to form the film by a wet plating method, for example.

The conditions in the step of forming the copper-plated film by the wet plating method, that is, the conditions of the electroplating treatment are not particularly limited, and various conditions in common methods can be adopted. For example, the base material on which the copper thin film layer is formed can be supplied into a plating bath having a copper plating solution, and a copper plating film can be formed by controlling the current density or the transfer speed of the base material.

In the conductive substrate for a touch panel according to this embodiment, the copper-plated coating film may have one surface facing the copper thin film layer and the other surface located on the opposite side of the one surface. In addition, in the depth range from the other surface of the copper plating film to 0.3 μm, the sulfur concentration is preferably 10 mass ppm or more and 150 mass ppm or less. The reason is as described above. In the case where the sulfur concentration in the copper-plated coating film satisfies the above-mentioned requirements, the surface roughness of the other surface of the copper-plated coating film can be easily limited to the expected value by etching the other surface after film formation. Range.

There is no particular limitation on the method for forming a copper-plated film so that the sulfur concentration in the copper-plated film satisfies the above-mentioned requirements. For example, the following methods can be mentioned: When a copper-plated film is formed by a wet plating method, An organic compound containing a sulfur atom is added to the plating solution used. As the wet plating method, for example, a plating method can be preferably used.

When the copper plating film is formed by, for example, an electroplating method, the conditions for electroplating are not particularly limited, and various conditions in common methods can be adopted. For example, by controlling the content, current density, or transfer speed of an organic compound containing a sulfur atom in a copper plating solution as a plating solution, the sulfur concentration can be formed from the other surface to a depth of 0.3 μm. Copper-plated coating.

The content of the sulfur atom-containing organic compound in the copper plating solution used when forming the copper plating film is not particularly limited, and is preferably 2 mass ppm or more and 25 mass ppm or less, more preferably 5 mass ppm or more, and 15 mass ppm or less. The reason is that by setting the content of the sulfur atom-containing organic compound in the copper plating solution to be 2 mass ppm or more and 25 mass ppm or less, it is easier to go from the other surface of the copper plating film to a depth of 0.3 μm. The range of sulfur concentration is limited to the above range.

The materials which can be preferably used as the sulfur atom-containing organic compound added to the plating solution have already been described, so the description is omitted here.

In addition, the sulfur concentration in a portion exceeding 0.3 μm from the other surface of the copper plating film is not particularly limited. For example, the sulfur concentration in the entire copper plating film may be in the above range. The copper plating film preferably contains, for example, copper as a main component and further contains sulfur at the above-mentioned concentration; the copper plating film is more preferably composed of copper and sulfur at the above-mentioned concentration. However, when the copper plating film is composed of copper and sulfur, the copper plating film may contain unavoidable components from the plating solution, Or impurities. In addition, the inclusion of copper as a main component means that the content of copper is 90% by weight or more.

Next, in the copper plating film forming step, after the copper plating film is formed (after the copper plating film forming step), it is preferable to perform an etching step of "etching the other surface of the copper plating film". In the etching step, the surface roughness of the other surface of the copper plating film is preferably 0.01 μm or more and 0.15 μm or less. The reason is that by setting the surface roughness of the other surface of the copper-plated coating to 0.01 μm or more and 0.15 μm or less, specular reflection (orthogonal reflection) on the surface of the copper-plated coating can be suppressed, and the copper-plated coating can be maintained. Adhesion between masks used for patterning.

The etching method of the other surface of a copper plating film is not specifically limited, For example, it can implement by using an etchant. The etchant used is not particularly limited, and a soft etchant for copper can be preferably used.

The thickness of the copper layer composed of the copper thin film layer and the copper plating film formed on the underlying metal layer is not particularly limited, and it can be based on the resistance value required for the conductive substrate for a touch panel or the patterned wiring width Wait for any choice. Among them, the thickness of the copper layer composed of the copper thin film layer and the copper plating film is preferably 0.5 μm or more and 4.1 μm or less, and more preferably 0.5 μm or more and 3 μm or less.

The reason is that by setting the thickness of the copper layer to 0.5 μm or more, the resistance value of the conductive substrate for a touch panel can be sufficiently reduced, and when the copper layer is patterned, the wiring pattern can be suppressed from being smaller than expected. Wiring width, and can prevent disconnection. In addition, by setting the film thickness of the copper layer to 4.1 μm or less, the area of the side portion of the copper layer can be suppressed from being reduced, and light reflection at the side portion of the copper layer can be suppressed. Furthermore, it is possible to suppress "side etching when a copper layer is etched to form a wiring pattern".

A copper layer composed of a copper thin film layer and a copper plating film The conductive substrate for a control panel can function as a conductive layer. In this way, the conductive substrate for a touch panel according to this embodiment can reduce the resistance value by containing a conductive layer using a metal.

In addition, in the method for manufacturing a conductive substrate for a touch panel according to this embodiment, an arbitrary step may be added in addition to the above steps.

For example, as described above, in the conductive substrate for a touch panel of the present embodiment, a blackened layer may be disposed on the copper plating film. For this purpose, a blackening layer forming step of forming the blackening layer may be further included.

The material constituting the blackening layer is not particularly limited, but it is preferable that the blackening layer contains Ni (nickel). To this end, the blackening layer forming step may be, for example, a step of forming a nickel-containing blackening layer on a copper plating film.

The materials which can be preferably used as the blackening layer have already been described, so the description is omitted.

In the step of forming the blackened layer, the method of forming the blackened layer is not particularly limited, and the film can be formed by a dry plating method in the same manner as the underlying metal layer, and can also be formed by a wet plating method. .

The thickness of the blackened layer formed in the blackened layer forming step is not particularly limited, and the degree of the reflectance (positive reflectance) required for the conductive substrate for a visible touch panel can be arbitrarily selected.

When the conductive substrate for a touch panel obtained by using the method for manufacturing a conductive substrate for a touch panel according to this embodiment is used for various applications such as a touch panel, the underlying metal layer contained in the conductive substrate for a touch panel , The copper thin film layer, and the copper-plated film are preferably patterned. The underlying metal layer, the copper thin film layer, and the copper-plated film can be patterned according to a desired wiring pattern, for example. It is preferable that the underlying metal layer, the copper thin film layer, and the copper plating film are patterned into the same shape.

Therefore, the method for manufacturing a conductive substrate according to this embodiment may include a patterning step of patterning the underlying metal layer, the copper thin film layer, and the copper plating film. The specific process of the patterning step is not particularly limited, and can be implemented using any process. For example, as shown in FIG. 1A, when a conductive substrate 10A for a touch panel is formed by laminating a base metal layer 12, a copper thin film layer 13, and a copper plating film 14 on an insulator base material 11, first, In the mask arrangement step, a mask having a desired pattern is placed on the other surface 14 b of the copper-plated coating film 14. Next, an etching step is performed in which an etching solution is supplied to the other surface 14 b of the copper-plated coating film 14, that is, the one surface on which the mask is disposed.

There is no particular limitation on the etchant used in the etching step, and the materials constituting the underlying metal layer, the copper thin film layer, and the copper plating film can be arbitrarily selected. For example, the etching solution can be changed for each layer, and the underlying metal layer, the copper thin film layer, and the copper plating film can be simultaneously etched using the same etching solution.

The pattern formed in the etching step is not particularly limited. For example, the underlying metal layer, the copper thin film layer, and the copper plating film can be patterned so as to have a plurality of patterns in a linear shape. In the case of a plurality of patterns that are patterned into a linear shape, as shown in FIGS. 2A and 2B, the patterned underlying metal layer 22, the copper thin film layer 23, and the copper plating film 24 may be parallel to each other and separated from each other. picture of.

Alternatively, a patterning step may be performed, which is performed by laminating the underlying metal layers 121 and 122 and the copper thin film layer 131 on the first main plane 11a and the second main plane 11b of the insulator substrate 11 as shown in FIG. 1B. , 132, and copper plating films 141 and 142 "are used to pattern the conductive substrate 10B for a touch panel. In this case, for example, a mask configuration step may be implemented, that is, A mask having a desired pattern is disposed on the other surfaces 141b and 142b of the copper-plated coatings 141 and 142. Next, an etching step may be performed, in which an etching solution is supplied to the other surfaces 141 b and 142 b of the copper-plated coatings 141 and 142, that is, the one surface on which the mask is disposed.

In the etching step, for example, the underlying metal layer 121, the copper thin film layer 131, and the copper plating film 141 laminated on the first main plane 11a side of the insulator base material 11 may be patterned in the direction of the Y axis in FIG. 1B A pattern of a plurality of linear shapes parallel to a direction perpendicular to the paper surface. In addition, the underlying metal layer 122, the copper thin film layer 132, and the copper plating film 142 laminated on the second main plane 11b side of the insulator base material 11 can be patterned into a plurality of linear shapes parallel to the X-axis direction in FIG. 1B. picture of. Accordingly, as shown in FIG. 4, the patterned copper thin film layer 431 and the copper plating film 441 formed on the first main plane 11 a side of the insulator base material while being held on the insulator base material 11, and formed on the second substrate The patterned copper thin film layer 432 and the copper plating film 442 on the main plane 11b side can form a conductive substrate for a touch panel including grid-shaped wiring.

Furthermore, the case where a blackening layer is not provided as an example has been described so far. However, when a blackening layer is provided on a copper plating film, a mask is also disposed on the blackening layer in the same manner, and a mask is provided to the blackening layer. An etching solution is supplied to one side of the cover, and the blackening layer can be patterned into a desired shape.

Furthermore, a laminated conductive substrate "made by stacking a plurality of conductive substrates for touch panels described so far" can be manufactured. The method for manufacturing a laminated conductive substrate for a touch panel may include a step of laminating, that is, laminating a plurality of conductive substrates obtained by the above-mentioned conductive substrate manufacturing method.

In the lamination step, for example, a plurality of patterned conductive substrates for touch panels shown in FIGS. 2A and 2B may be laminated. Specifically, as shown in FIG. 3A and FIG. 3B, The first main plane 111a of the insulator base material 111 of one conductive substrate 201 for a touch panel and the second main plane 112b of the insulator base material 112 of another conductive substrate 202 for a touch panel can be opposed to each other. Laminate and implement.

After the lamination, the two conductive substrates 201 and 202 for touch panels can be fixed with, for example, an adhesive.

In addition, one conductive substrate 201 for a touch panel may be turned upside down, and the second principal plane 111b of the insulating base material 111 of one conductive substrate 201 for a touch panel may be electrically conductive to another conductive substrate for a touch panel. The insulator substrate 112 of the flexible substrate 202 is laminated so that the second principal plane 112b faces each other.

When the laminated conductive substrate for a touch panel with grid-shaped wiring is used, as shown in FIG. 3A and FIG. 3B, a conductive substrate 201 for a touch panel can be formed in advance in a lamination step. The patterned copper thin film layer 231 and the copper-plated film 241 are laminated with the patterned copper thin-film layer 232 and the copper-plated film 242 formed on the conductive substrate 202 for another touch panel in a manner intersecting with each other.

In FIGS. 3A and 3B, an example of forming a grid-like wiring (wiring pattern) by combining copper layers patterned into a linear shape is shown, but it is not limited to this form. The shape of the wiring constituting the wiring pattern, that is, the patterned copper layer can also be designed to any shape. For example, the shape of the wiring forming the grid-shaped wiring pattern may be designed into various shapes such as a zigzag line (zigzag straight line), so that moire (interference) does not occur with the image of the display.

The conductive substrate for a touch panel and the laminated conductive substrate for a touch panel obtained by using the method for manufacturing a conductive substrate for a touch panel and the method for manufacturing a laminated conductive substrate for a touch panel according to this embodiment, copper plating The surface roughness of the other side of the film is as above The may be limited to a specific range. Therefore, regular reflection of light on the other surface of the copper-plated film can be suppressed. Furthermore, since the underlying metal layer is disposed between the copper thin film layer and the insulator base material, it is also possible to suppress the regular reflection of the light incident on the surface of the copper thin film layer through the edge insulating base material. In addition, since the copper layer is formed of a copper thin film layer and a copper plating film and can function as a conductive layer, the resistance value can also be reduced.

[Example]

Specific examples and comparative examples will be described below, but the present invention is not limited to these examples.

(Evaluation method)

First, the evaluation method of the obtained conductive substrate is demonstrated.

(Sulfur concentration)

The sulfur concentration in the copper plating film was measured using a secondary ion mass spectrometer (Dinamics-Secondary Ion Mass Spectroscopy: D-SIMS).

The secondary ion mass spectrometer was an ims5f secondary ion mass spectrometer (manufactured by CAMECA).

Primary ion conditions: Cs ⁺ , 14.5KeV, 30nA; irradiation area: 150 μm × 150 μm; analysis area: 60μm; secondary ion polarity: negative.

In general, in the case of analysis of elements that are positive for electricity (Li, B, Mg, Ti, Cr, Mn, Fe, Ni, Mo, In, Ta, etc.), the two Detection of secondary ions. On the other hand, in the case of analyzing elements (H, C, O, F, Si, S, Cl, As, Te, Au, etc.) that are negative in electrical properties, cesium ions are irradiated to counter negative secondary ions. The detection is performed so that the measurement can be performed with good sensitivity, and the above conditions are set based on this.

The sample chamber vacuum degree: 8.0 × 10 ^-8 Pa; the sputtering rate: about 22 Å / sec, and the measurement was performed under the above conditions. Using a sample for sputtering rate measurement having the same copper layer as the copper plating film, sputtering was performed under the same sputtering conditions as in the actual analysis, and the average sputtering rate was determined. When analyzing each sample, the depth was calculated from the sputtering time using the sputtering rate.

The measurement of the sulfur concentration was performed after the copper plating film was formed, and the other surface of the copper plating film was etched. In addition, a part of the prepared sample was cut out for measurement of the sulfur concentration.

(Surface roughness)

Optical Profiler- (Zygo, NewView 6200) was used to measure the surface roughness (Ra) of the other surface of the copper-plated coating. The surface roughness (Ra) was measured according to a method specified in JIS B 0651 (2001).

(Reflectivity)

The reflectance (orthogonal reflectance) was measured by installing a reflectance measurement unit in an ultraviolet-visible spectrophotometer (manufactured by Shimadzu Corporation: UV-2550).

The copper plating film surfaces of the conductive substrates for touch panels produced in the following examples and comparative examples were set at an interval of 1 nm, an incident angle of 5 °, and a light receiving angle of 5 °. The irradiation wavelength was 400 nm or more. The reflectance was measured for light having a wavelength of 700 nm or less, and the average value was used as the reflectance (normal reflectance).

In addition, under the same conditions, the base metal layer was irradiated with light having a wavelength of 400 nm or more and 700 nm or less while isolating the edge body substrate, and the reflectance (normal reflectance) of the surface of the base metal layer was measured.

(Evaluation of wiring shape)

With respect to the produced conductive substrate for a touch panel, the underlying metal layer, the copper thin film layer, and the copper plating film were patterned, and then the wiring shape was observed with a laser microscope. When the wiring was fixedly formed with a desired wiring width, the evaluation was ○. When a part of the formed wiring pattern contained a part different from the expected wiring width, it was evaluated as Δ. In addition, when the mask is peeled off during the etching step and cannot be patterned into a desired shape, or when the copper plating film is hardly dissolved and cannot be patterned into a desired shape, it is evaluated as ×.

(Sample production conditions)

As examples and comparative examples, conductive substrates were produced under the conditions described below and evaluated by the above-mentioned evaluation methods.

[Example 1]

(Step of forming a bottom metal layer)

An insulator substrate that is a resin film made of polyethylene terephthalate resin (PET) having a width of 500 mm and a thickness of 100 μm was installed in a roll-type vacuum coating apparatus 50 shown in FIG. 5.

In addition, based on JISK 7361-1 (2011), the evaluation of the total light transmittance of the insulator base made of polyethylene terephthalate resin was used, and it was confirmed that it was 98%.

Next, a roll-type vacuum coating apparatus 50 is used to form a base metal layer on one principal plane of the insulator substrate. As the underlying metal layer, a Ni-Cr alloy layer containing oxygen was formed.

The film formation conditions of the underlying metal layer will be described.

Sputtering cathodes 54a to 54d in the roll-type vacuum coating apparatus 50 shown in FIG. 5 Targets connected to Ni-17 wt% Cr alloy.

The heater 61 of the roll-type vacuum coating apparatus 50 was heated to 60 ° C., and the insulator base material was heated to remove the moisture contained in the insulator base material.

Next, after exhausting the inside of the case 51 to 1 × 10 ^-3 Pa, argon and oxygen were introduced, and the pressure inside the case 51 was adjusted to 1.3 Pa. At this time, the supply amounts of argon and oxygen were adjusted so that the environment in the casing 51 was 30% oxygen by volume ratio and the remainder was argon.

In addition, while carrying the insulator base material from the take-up roll 52, power was supplied by a sputtering DC power source connected to the sputtering cathodes 54a to 54d, and sputtering discharge was performed to perform the desired underlying metal on the base material. Continuous film formation of layers. With this operation, a film was formed on a main plane of the insulator substrate so that the underlying metal layer had a thickness of 20 nm.

(Copper film layer forming step)

The copper thin film layer was formed on the underlying metal layer using a roll-up vacuum coating apparatus 50.

In the copper thin film layer forming step, a copper target is connected to the sputtering cathodes 54a to 54d of the roll-type vacuum coating device 50 shown in FIG. 5 to form a film. As a base material, it is used in the bottom metal layer forming step. A base metal layer is formed on an insulator substrate.

The conditions for forming the metal thin film layer are the same as the steps for forming the underlying metal layer, except that the target is changed as described below and in the following two points.

After exhausting the inside of the case 51 to 1 × 10 ^-3 Pa, argon gas was introduced, and the pressure inside the case 51 was adjusted to a point of 1.3 Pa.

The point where a copper thin film layer was formed so that a film thickness might become 100 nm.

(Copper plating film formation step)

In the copper plating film formation step, a copper plating film was formed to a thickness of 1.0 μm by an electroplating method. Way to form a film.

The copper plating solution used when forming the copper plating film is a copper sulfate solution at a temperature of 27 ° C and a pH of 1 or less. As a sulfur atom-containing organic compound, it contains 8 mass ppm of SPS (BiS (3-sulfopropyl) disulfide). .

The sulfur concentration in the copper-plated film "from the surface of the other surface of the copper-plated film to a depth of 0.3 µm" was measured for the formed copper-plated film by the above method, and it was 60 mass ppm.

In addition, CleanEtch CPE-750 (manufactured by Mitsubishi Gas Chemical Co., Ltd.) as an etching solution for copper was supplied to the entire surface of the other surface of the copper plating film, and the entire surface of the other surface holding the copper plating film was in contact with the etching solution. Etching was performed for 10 seconds.

For the other surface of the copper plating film after etching, the sulfur concentration (the sulfur concentration in the copper plating film from the surface of the other surface to a depth of 0.3 μm), the surface roughness (Ra), and the normal reflectance were measured by the above method. Perform the measurement. The results are shown in Table 1.

In addition, it was confirmed that the regular reflectance of the surface of the underlying metal layer was measured while isolating the edge body substrate, and it was found to be 28%.

(Patterning step)

The obtained conductive substrate for a touch panel was subjected to a patterning step including a mask disposition step and an etching step; the mask disposition step was to place a mask on the copper plating film; and the etching step was to dispose the mask. An etching solution is supplied on the upper surface of the copper plating film of the cover to perform etching. Accordingly, as shown in FIGS. 2A and 2B, a conductive substrate for a touch panel having a linear wiring pattern was produced. When etching is performed, an aqueous copper dichloride solution is used as an etching solution.

The wiring pattern of the produced conductive substrate for a touch panel was implemented. Evaluation of the above-mentioned wiring shape.

In addition, using the same process and conditions as the method described so far, the underlying metal layer, the copper thin film layer, and the copper plating film were laminated on the insulator substrate to produce another sheet whose shape was patterned into the same touch as the above case. A conductive substrate for a panel.

In addition, the two conductive substrates for a touch panel produced were laminated as shown in FIG. 3A and FIG. 3B, and the two conductive substrates were fixed with an adhesive to prepare a laminated layer for a touch panel. Conductive substrate.

[Example 2]

A conductive substrate for a touch panel was produced and evaluated in the same manner as in Example 1 except that the entire surface of the other surface of the copper-plated coating film was contacted with an etchant for 15 seconds in the copper-plated coating film forming step. The evaluation results are shown in Table 1.

In addition, after the formation of the copper-plated film, before etching the other surface of the copper-plated film, the copper plating film from the surface of the other surface of the copper-plated film to a depth of 0.3 μm was subjected to the above method. The sulfur concentration was measured. As a result, it was confirmed that it was the same as the measured value after etching shown in Table 1.

It was confirmed that the regular reflectance of the surface of the underlying metal layer was measured by isolating the edge body substrate, and the result was 28%.

In addition, as in Example 1, two conductive substrates for touch panels fabricated under the same conditions were laminated, and a laminated conductive substrate for touch panels was also produced.

[Example 3]

A touch panel was produced in the same manner as in Example 1 except that an insulator substrate that was a cycloolefin polymer resin resin film with a width of 500 mm and a thickness of 100 μm was used as the insulator substrate. The conductive substrate was evaluated. The evaluation results are shown in Table 1.

The total light transmittance of the cycloolefin polymer resin insulator substrate used was evaluated based on JIS K7361-1 (2011). As a result, it was confirmed to be 92%. In addition, after the formation of the copper plating film, before the other surface of the copper plating film was etched, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm was measured by the method described above. As a result of measurement, it was confirmed that it is the same as the measured value after etching shown in Table 1.

It was confirmed that the regular reflectance of the surface of the underlying metal layer through the edge substrate was isolated, and it was confirmed that it was 25%.

Next, as in Example 1, two conductive substrates for touch panels produced under the same conditions were laminated, and a laminated conductive substrate for touch panels was also produced.

[Example 4]

A conductive substrate for a touch panel was produced in the same manner as in Example 1 except that the SPS added to the copper plating solution was 10 mass ppm and the film thickness of the copper plating film was 4 μm in the copper plating film formation step. And evaluate. The evaluation results are shown in Table 1.

In addition, after the formation of the copper plating film, before the other surface of the copper plating film was etched, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm was measured by the method described above. As a result of measurement, it was confirmed that it is the same as the measured value after etching shown in Table 1.

It was confirmed that the regular reflectance of the surface of the underlying metal layer was measured by isolating the edge body substrate, and the result was 28%.

In addition, as in Example 1, two touch panels made under the same conditions were used. A conductive substrate for a panel is laminated, and a laminated conductive substrate for a touch panel is also produced.

[Example 5]

A conductive film for a touch panel was produced in the same manner as in Example 1 except that the SPS added to the copper plating solution was 5 mass ppm and the film thickness of the copper plating film was 0.4 μm in the copper plating film formation step. And evaluated. The evaluation results are shown in Table 1.

In addition, after the formation of the copper plating film, before the other surface of the copper plating film was etched, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm was measured by the method described above. As a result of measurement, it was found that it was the same as the measured value after etching shown in Table 1.

It was confirmed that the regular reflectance of the surface of the underlying metal layer was measured by isolating the edge body substrate, and the result was 28%.

In addition, in the same manner as in Example 1, two conductive substrates for touch panels fabricated under the same conditions were laminated, and a laminated conductive substrate for touch panels was also produced.

[Example 6]

A touch panel was produced in the same manner as in Example 1 except that the SPS added to the copper plating solution was 5 mass ppm in the copper plating film formation step and the film thickness of the formed copper plating film was 0.3 μm. A conductive substrate was used and evaluated. The evaluation results are shown in Table 1.

In addition, after the formation of the copper plating film, before the other surface of the copper plating film was etched, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm was measured by the method described above. As a result of measurement, it was confirmed that it is the same as the measured value after etching shown in Table 1.

Measure the regular reflectance of the surface of the underlying metal layer by insulating the base material The result can be confirmed as 28%.

In addition, in the same manner as in Example 1, two conductive substrates for touch panels fabricated under the same conditions were laminated, and a laminated conductive substrate for touch panels was also produced.

[Example 7]

A touch panel was produced in the same manner as in Example 1 except that the SPS added to the copper plating solution was 10 mass ppm in the copper plating film formation step and the film thickness of the formed copper plating film was 4.1 μm. A conductive substrate was used and evaluated. The evaluation results are shown in Table 1.

In addition, after the formation of the copper plating film, before the other surface of the copper plating film was etched, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm was measured by the method described above. As a result of the measurement, it was confirmed that the values were the same as those measured after the etching shown in Table 1.

It was confirmed that the regular reflectance of the surface of the underlying metal layer was measured by isolating the edge body substrate, and the result was 28%.

In addition, in the same manner as in Example 1, two conductive substrates for touch panels fabricated under the same conditions were laminated, and a laminated conductive substrate for touch panels was also produced.

[Comparative Example 1]

A conductive substrate for a touch panel was produced and evaluated in the same manner as in Example 1 except that the SPS added to the copper plating solution in the copper plating film formation step was 1 mass ppm. The evaluation results are shown in Table 1.

In addition, after the formation of the copper plating film, before the other surface of the copper plating film was etched, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm was measured by the method described above. As a result of the measurement, it was confirmed that The setting is the same.

The regular reflectance of the surface of the underlying metal layer was measured by insulating the edge body substrate, and it was confirmed that it was 28%.

In addition, in the same manner as in Example 1, two conductive substrates for a touch panel manufactured under the same conditions were laminated, and a laminated conductive substrate for a touch panel was also produced accordingly.

[Comparative Example 2]

A conductive substrate for a touch panel was produced and evaluated in the same manner as in Example 1 except that the SPS added to the copper plating solution was 40 mass ppm in the copper plating film formation step. The evaluation results are shown in Table 1.

In addition, after the formation of the copper plating film, before the other surface of the copper plating film was etched, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm was measured by the method described above. The measurement was performed, and the results were confirmed to be the same as the measured values after etching shown in Table 1.

It was confirmed that the regular reflectance of the surface of the underlying metal layer was measured by isolating the edge body substrate, and the result was 28%.

In addition, in the same manner as in Example 1, two conductive substrates for touch panels fabricated under the same conditions were laminated, and a laminated conductive substrate for touch panels was also produced.

From the results in Table 1, it can be confirmed from Examples 1 to 7 that the surface roughness Ra of the other surface of the copper-plated coating is 0.01 μm or more and 0.15 μm or less, and the reflectance of the other surface of the copper-plated coating is also sufficiently reduced. 30% or less. Moreover, in Examples 1 to 5, it was confirmed that the evaluation of the wiring shape was also ○, and an expected wiring pattern was obtained by the etching step.

Regarding Example 6, the thickness of the copper-plated film was 0.3 μm, and the thickness of the copper layer was relatively thin, at 0.4 μm. Therefore, the obtained wiring pattern had a portion narrower than the expected wiring width. Therefore, the wiring shape was evaluated as Δ.

In Example 7, the film thickness of the copper plating film was 4.1 μm, and the film thickness of the copper layer was relatively thick, which was 4.2 μm. Therefore, in the etching step in the patterning step, the wiring pattern A part of the case has a side etch and contains a portion different from the expected wiring width. Therefore, the wiring shape was evaluated as Δ.

On the other hand, in Comparative Example 1, it was confirmed that the surface roughness Ra of the other surface of the copper-plated film was small, being 0.009 μm, and the reflectance of the other surface of the copper-plated film was high, being 31%. Further, in the etching step in the patterning step, the reactivity with the etchant for the copper plating film was low, and dissolution residues were generated. Therefore, the evaluation of the wiring shape was ×.

Moreover, in Comparative Example 2, it was confirmed that the surface roughness of the other surface of the copper-plated coating film was 0.16 μm, so that the reflectance on the surface of the copper-plated coating film was sufficiently suppressed to 9%. Among them, it was confirmed that a gap occurred between the mask and the other surface of the copper plating film due to the peeling of the mask in the etching step, and the evaluation result of the wiring shape was that the linearity of the formed wiring pattern was deteriorated.

In addition, as shown in FIGS. 3A and 3B, the laminated conductive substrate for a touch panel produced in Examples 1 to 7 was visually confirmed to include a grid-like wiring pattern. On the other hand, in Comparative Example 1, as described above, since the wiring pattern has a dissolution residue, it cannot be used as a laminated conductive substrate for a touch panel containing a grid-like wiring pattern. In Comparative Example 2, the linearity of the wiring pattern was poor, so it could not be used as a laminated conductive substrate for a touch panel having a desired grid-like wiring pattern.

The conductive substrate for a touch panel and the manufacturing method of a conductive substrate for a touch panel have been described above with reference to the embodiments, examples, and the like, but the present invention is not limited to the above-mentioned embodiments and examples. Various modifications and changes can be made within the scope of the gist of the present invention described in the patent application scope.

This application claims priority based on "Japanese Patent Application No. 2014-157061" filed with the Japan Patent Office on July 31, 2014, and incorporates all contents of "Japanese Patent Application No. 2014-157061" Capacity is used for this international application.

Claims (8)

A conductive substrate for a touch panel includes: an insulator substrate; a bottom metal layer: disposed on at least one side of the insulator substrate and containing nickel; a copper thin film layer: disposed on the bottom metal layer; and a copper plating film : Arranged on the copper thin film layer, having one surface opposite to the copper thin film layer and the other surface on the opposite side of the one surface; from a surface of the other surface of the copper plating film to a depth range of 0.3 μm, The sulfur concentration is 10 mass ppm or more and 150 mass ppm or less, and the surface roughness (Ra) of the other surface of the copper plating film is 0.01 μm or more and 0.15 μm or less. For example, the conductive substrate for a touch panel according to item 1 of the patent application range, wherein the insulator base material is a polyamide-based film, a polyester-based film, a polyethylene naphthalate-based film, a cycloolefin-based film, Resin substrate selected from a polyimide-based film and a polycarbonate-based film. For example, the conductive substrate for a touch panel according to item 1 or 2 of the patent application scope, wherein the total light transmittance of the insulator substrate is 90% or more. The conductive substrate for a touch panel according to any one of claims 1 to 3, wherein the underlying metal layer has an average regular reflection in a range of 400 nm or more and 700 nm or less in a wavelength range between 400 nm and 700 nm of the insulator base material. The rate is 30% or less. The conductive substrate for a touch panel according to any one of claims 1 to 4, wherein the thickness of a copper layer composed of the copper thin film layer and the copper plating film is 0.5 μm or more and 4.1 μm. the following. The conductive substrate for a touch panel according to any one of claims 1 to 5, further comprising a blackened layer on the copper plating film, the blackened layer containing nickel. For example, the conductive substrate for a touch panel according to item 6 of the patent application, wherein the average reflectance of the blackened layer in a range of 400 nm to 700 nm is 30% or less. A method for manufacturing a conductive substrate for a touch panel includes the following steps: a step of forming a bottom metal layer: forming a bottom metal layer containing nickel on at least one side of an insulator substrate; a step of forming a copper thin film layer: on the bottom metal layer Forming a copper thin film layer; and forming a copper plating film: forming a copper plating film on the copper thin film layer, the copper plating film having a surface opposite to the copper thin film layer and another surface on an opposite side to the one surface; In a depth range from the surface of the other surface of the copper plating film to 0.3 μm, the sulfur concentration is 10 mass ppm or more and 150 mass ppm or less, so that the surface roughness (Ra) of the other surface of the copper plating film is 0.01 μm. The copper plating film was formed into a film having a thickness of 0.15 μm or less.