JP6531699B2 - Conductive substrate - Google Patents

Description

  The present invention relates to a conductive substrate.

  The capacitive touch panel converts information on the position of the adjacent object on the panel surface into an electrical signal by detecting a change in capacitance caused by the object in proximity to the panel surface. Since the conductive substrate used in the capacitive touch panel is disposed on the surface of the display, the material of the conductive layer of the conductive substrate is required to have a low reflectance and be hard to be recognized.

  Therefore, as a material of the conductive layer of the conductive substrate used in the capacitive touch panel, a material having a low reflectance and which is hard to be recognized is used, and a wiring is formed on a transparent substrate or a transparent film.

  For example, Patent Document 1 discloses a transparent conductive film including a polymer film and a transparent conductive film comprising a metal oxide provided thereon by a vapor deposition method, wherein the transparent conductive film comprises a metal oxide A transparent conductive film comprising a first metal oxide and a transparent conductive film comprising a second metal oxide provided thereon, the transparent conductive film comprising a second metal oxide comprising A transparent conductive film is disclosed which is formed under conditions different from the film forming conditions of a transparent conductive film made of a metal oxide. And it is also disclosed that the transparent conductive film which consists of metal oxides is an indium oxide tin oxide (ITO) film.

  By the way, in recent years, in order to cope with the trend toward larger screens and higher performance of displays equipped with touch panels, instead of ITO having high electrical resistance, metals such as copper are used as the material of the conductive layer. Is being studied (see, for example, Patent Documents 2 and 3). However, since metal has metallic luster, there is a problem that the visibility of the display is lowered by reflection. For this reason, a conductive substrate having a blackening layer made of a black material together with a metal layer such as copper to be a conductive layer has been studied.

Unexamined-Japanese-Patent No. 2003-151358 JP, 2011-018194, A JP, 2013-069261, A

  By the way, in order to obtain a conductive substrate having a desired wiring pattern for a conductive substrate having a metal layer and a blackening layer, the metal layer and the blackening layer are formed on at least one surface of the transparent substrate. After formation, a method of etching the metal layer and the blackening layer is generally used.

  However, when etching a metal layer and a blackening layer, there existed a case where an etching could not be performed uniformly, for example, one part melt | dissolves quicker than another part etc. within a conductive substrate. As described above, if the etching can not be performed uniformly in the conductive substrate, the line width of the formed wiring pattern may vary, which is a problem.

  SUMMARY OF THE INVENTION In view of the problems of the prior art, it is an object of the present invention to provide a conductive substrate excellent in etching uniformity.

In one aspect of the present invention to solve the above problems,
A transparent substrate,
A metal layer disposed on at least one surface of the transparent substrate;
And dry plating blackening layer disposed on the metal layer;
Surface roughness of the dry plating blackening layer facing the surface of the metal layer Ra ([mu] m) is state, and are 1.0 times or more of the thickness of the dry plating blackening layer ([mu] m),
The metal layer provides a conductive substrate that have a metal plating layer.

  According to one aspect of the present invention, a conductive substrate excellent in etching uniformity can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. The top view of the conductive substrate provided with the mesh-like wiring concerning the embodiment of the present invention. Sectional drawing in the AA 'line of FIG.

Hereinafter, an embodiment of a conductive substrate and a method of manufacturing the conductive substrate of the present invention will be described.
(Conductive substrate)
The conductive substrate of the present embodiment can have a transparent substrate, a metal layer disposed on at least one surface of the transparent substrate, and a dry plating blackening layer disposed on the metal layer. The surface roughness Ra (μm) of the surface of the metal layer facing the dry plating blackening layer can be 1.0 or more times the thickness (μm) of the dry plating blackening layer.

  The conductive substrate in this embodiment is a substrate having a metal layer and a dry plating blackening layer on the surface of a transparent base before patterning a metal layer and the like, and a metal layer and the like by patterning. It includes a shaped substrate, ie, a wiring substrate. The conductive substrate after patterning of the metal layer and the dry plating blackening layer can transmit light because the transparent substrate includes a region not covered with the metal layer or the like, and thus becomes a transparent conductive substrate.

  Here, first, each member included in the conductive substrate of the present embodiment will be described below.

  The transparent substrate is not particularly limited, and an insulator film that transmits visible light, a glass substrate, and the like can be preferably used.

  As an insulator film which transmits visible light, 1 type selected from resin films, such as a polyamide system film, a polyethylene terephthalate system film, a polyethylene naphthalate system film, a cycloolefin system film, a polyimide system film, a polycarbonate system film, etc., for example The above can be preferably used. In particular, one or more selected from PET (polyethylene terephthalate), COP (cycloolefin polymer), PEN (polyethylene naphthalate), polyamide, polyimide, polycarbonate, etc. is more preferable as a material of an insulator film transmitting visible light. It can be used.

  The thickness of the transparent substrate is not particularly limited, and can be arbitrarily selected according to the strength, the capacitance, the light transmittance, and the like required in the case of using a conductive substrate. The thickness of the transparent substrate can be, for example, 10 μm or more and 200 μm or less. In particular, when used for touch panel applications, the thickness of the transparent substrate is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. When used for touch panel applications, for example, in applications where it is required to reduce the thickness of the entire display, the thickness of the transparent substrate is preferably 20 μm to 50 μm.

  The total light transmittance of the transparent substrate is preferably high. For example, the total light transmittance is preferably 30% or more, more preferably 60% or more. When the total light transmittance of the transparent substrate is in the above range, the visibility of the display can be sufficiently ensured, for example, when used for a touch panel application.

  In addition, the total light transmittance of a transparent base material can be evaluated by the method prescribed | regulated to JISK7361-1.

  Next, the metal layer will be described.

  The material forming the metal layer is not particularly limited, and a material having electrical conductivity suitable for the application can be selected, but copper is used as the material forming the metal layer because of excellent electrical characteristics and easiness of etching treatment. Is preferred. That is, the metal layer preferably contains copper.

  When the metal layer contains copper, the material constituting the metal layer is, for example, Cu and at least one metal selected from Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, Co, and W. It is preferable that it is a material containing the copper alloy of the above, or copper and one or more metals selected from the above metals. The metal layer can also be a copper layer composed of copper.

  The method of forming the metal layer is not particularly limited. However, in order not to reduce the light transmittance, it is preferable that the adhesive layer is not disposed between the other member and the metal layer. That is, the metal layer is preferably formed directly on the top surface of the other member. The metal layer can be formed on the transparent substrate or on the upper surface of the adhesion layer. For this reason, the metal layer is preferably formed directly on the upper surface of the transparent substrate or the adhesion layer.

  In order to form a metal layer directly on the upper surface of another member, the metal layer preferably has a metal thin film layer deposited using a dry plating method. The dry plating method is not particularly limited. For example, a vapor deposition method, a sputtering method, an ion plating method or the like can be used. In particular, it is preferable to use a sputtering method because control of the film thickness is easy.

  In the case of making the metal layer thicker, dry plating and wet plating can be used. Specifically, for example, a metal thin film layer is formed by dry plating on a transparent substrate, and the metal thin film layer is used as a feeding layer to form a metal plating layer by electrolytic plating, which is a type of wet plating. Can.

  When the metal layer is formed only by the dry plating method as described above, the metal layer can be formed of a metal thin film layer. Moreover, when a metal layer is formed combining the dry plating method and the wet plating method, a metal layer can be comprised by a metal thin film layer and a metal plating layer.

  Forming the metal layer directly on the transparent substrate or the adhesion layer without forming an adhesive agent by forming the metal layer by combining the dry plating method alone or the dry plating method and the wet plating method as described above it can.

  In the conductive substrate of the present embodiment, the surface roughness Ra of the surface of the metal layer facing the dry plating blackening layer is preferably 1.0 or more times the thickness of the dry plating blackening layer. Then, as a method of setting the surface roughness Ra of the surface of the metal layer facing the dry plating blackening layer to a desired value, for example, a method of surface treatment of the formed metal layer, a metal thin film layer The method of selecting the sputtering conditions of the above, the method of selecting the conditions at the time of forming the metal plating layer, and the like can be mentioned. Note that, as a method of selecting the conditions for forming the metal plating layer, for example, PR current (Periodic) in which the direction of the current supplied to the electrode is periodically reversed during the formation of the metal plating layer Plating methods using reverse current), plating methods using low current density to reduce current density, and the like can be mentioned.

  And, according to the method of selecting the conditions for forming the metal plating layer, the surface roughness Ra of the surface of the metal plating layer is particularly easily desired without increasing the number of steps in manufacturing the conductive substrate. It can be a value of Then, it is preferable to make surface roughness Ra of the metal layer surface into a predetermined | prescribed range by the method of selecting the conditions at the time of forming a metal plating layer into a film. For this reason, it is preferable that the metal layer of the conductive substrate of this embodiment has a metal plating layer (wet plating metal layer).

  The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wire, it can be arbitrarily selected according to the magnitude of the current supplied to the wire, the wire width, and the like.

  However, if the metal layer is thick, side etching tends to occur because etching takes time to perform the wiring pattern formation, which may cause problems such as difficulty in forming fine lines. Therefore, the thickness of the metal layer is preferably 5 μm or less, more preferably 3 μm or less.

  Also, in order to set the surface roughness of the surface of the metal layer facing the dry plating blackening layer within a predetermined range, the resistance value of the conductive substrate is further lowered, and a current can be sufficiently supplied. For example, the thickness of the metal layer is preferably 50 nm or more, more preferably 60 nm or more, and still more preferably 150 nm or more.

  In addition, when a metal layer has a metal thin film layer and a metal plating layer as mentioned above, it is preferable that the sum total of the thickness of a metal thin film layer and the thickness of a metal plating layer is the said range.

  The thickness of the metal thin film layer is not particularly limited in either case where the metal layer is constituted of a metal thin film layer or in the case of being constituted of a metal thin film layer and a metal plating layer, for example 50 nm The thickness is preferably 500 nm or less.

  Then, in the conductive substrate of the present embodiment, the surface roughness Ra (μm) of the surface of the metal layer facing the dry plating blackening layer is 1.0 times the thickness (μm) of the dry plating blackening layer It can be more than.

  The inventors of the present invention uniformly etch a conductive substrate in which a metal layer and a dry plating blackening layer are disposed on a transparent substrate so as to obtain a desired wiring pattern, and the conductive substrate is uniformly formed. The cause of the case where etching can not be made has been earnestly studied.

  As a result, it was confirmed that in the case of the conductive substrate which can not be etched uniformly, the etchant penetrates between the metal layer and the dry plating blackening layer in a part of the conductive substrate.

  Since the dry plating blackening layer usually has lower reactivity to the etching solution than the metal layer, the time required for etching the metal layer and the dry plating blackening layer is the time required for etching the dry plating blackening layer Account for a large percentage. Then, as described above, when the etching solution intrudes between the metal layer and the dry plating blackening layer, the dry plating blackening layer is also etched from the metal layer side by the etching solution that has penetrated, so It will be etched earlier compared to the part where there is no penetration. For this reason, the case where it could not etch uniformly in the conductive substrate had arisen. In particular, as the thickness of the dry-plated blackened layer increases, the difference in the time required for etching between the portion where the etching solution intrudes between the metal layer and the dry-plated blackened layer and the other portion increases, and etching occurs. Inhomogeneity was apt to occur.

  Therefore, in the conductive substrate of the present embodiment, the surface roughness Ra (μm) of the surface of the metal layer facing the dry plating blackening layer is 1.0 or more times the thickness (μm) of the dry plating blackening layer According to the thickness of the dry plating blackening layer, the adhesion between the metal layer and the dry plating blackening layer is enhanced, and a conductive substrate excellent in etching uniformity is obtained.

  In addition, although surface roughness Ra of the surface which opposes the dry plating blackening layer of a metal layer can be selected so that ratio with the thickness of a dry plating blackening layer may be satisfy | filled as mentioned above, it is especially preferable. The thickness is preferably 022 μm or more, and more preferably 0.028 μm or more. This is because the etching solution penetrates between the metal layer and the dry plating blackening layer, in particular, by setting the surface roughness Ra of the surface of the metal layer facing the dry plating blackening layer to 0.022 μm or more. It is because it can control.

  The upper limit of the surface roughness Ra of the surface of the metal layer facing the dry plating blackening layer is not particularly limited, but is preferably 0.080 μm or less, and more preferably 0.060 μm or less. This is because when the surface roughness Ra of the surface of the metal layer facing the dry plating blackening layer exceeds 0.080 μm, the dry plating blackening layer may not be uniformly deposited, and the color of the dry plating blackening layer It is because there is a risk of affecting the taste.

  The surface roughness Ra is defined in JIS B 0601 (2013) as an arithmetic average roughness. The surface roughness Ra can be evaluated by a stylus method or an optical method.

  Next, the dry plating blackening layer will be described.

  Since the metal layer has metallic luster, the metal layer reflects light only by forming a wiring in which the metal layer is etched on the transparent substrate, and when used as a wiring substrate for a touch panel, for example, the visibility of the display decreases Had the problem of Therefore, in order to suppress the reflection of light on the surface of the metal layer, in the conductive substrate of the present embodiment, a dry plating blackening layer can be provided on the metal layer.

  The dry plating blackening layer preferably contains, for example, at least one metal selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. In addition, the dry plating blackening layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

  The dry plating blackening layer contains a metal alloy containing at least two or more metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. You can also. Also in this case, the dry plating blackening layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as a metal alloy containing at least two or more metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, a Ni-Cu alloy, Ni-Cu-Cr alloy, Ni-Zn alloy, Ni-Zn-Cu alloy, Cu-Ti-Fe alloy, Cu-Ni-Fe alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy are preferable. It can be used.

  The dry plating blackening layer can be formed by dry plating. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method and the like can be preferably used. In the case of forming a dry plating blackening layer by dry plating, it is more preferable to use a sputtering method because control of the film thickness is easy. As described above, one or more elements selected from carbon, oxygen, hydrogen and nitrogen can be added to the dry plating blackening layer, and in this case, reactive sputtering can be more preferably used.

  When forming a dry plating blackening layer into a film by sputtering method, the target containing metal seed which comprises a dry plating blackening layer can be used. When the dry plating blackening layer contains an alloy, a target may be used for each metal species contained in the dry plating blackening layer, and the alloy may be formed on the surface of a film-forming body such as a substrate. The target which alloyed the metal contained in a metal-plating blackening layer can also be used.

  In addition, a dry plating blackening layer containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is a gas containing an element to be added in the atmosphere when forming the dry plating blackening layer. A film can be formed by adding it. For example, carbon monoxide gas and / or carbon dioxide gas is added when carbon is added to the dry plating blackened layer, oxygen gas is added when oxygen is added, hydrogen gas and / or hydrogen is added when hydrogen is added. Water can be added to the atmosphere at the time of dry plating, when nitrogen is added.

  A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas in dry plating. The inert gas is not particularly limited but, for example, argon can be preferably used.

  The thickness of the dry plating blackening layer is not particularly limited, but is preferably 10 nm or more, and more preferably 15 nm or more. This is because when the thickness of the dry plating blackening layer is thin, the reflection of light on the surface of the metal layer may not be sufficiently suppressed, so the thickness of the dry plating blackening layer is 10 nm or more as described above. It is because it is preferable to comprise so that reflection of the light in the metal layer surface can be suppressed especially by carrying out.

  The upper limit of the thickness of the dry-plated blackened layer is not particularly limited, but even if it is thicker than necessary, the time required for film formation and the time required for etching for forming a wiring become longer, and the cost is increased. Will cause a rise in Therefore, the thickness of the dry plating blackening layer is preferably 50 nm or less, and more preferably 25 nm or less.

  In the conductive substrate of the present embodiment, the reflection of light on the surface of the metal layer can be suppressed as described above by arranging the dry plating blackening layer. For this reason, for example, when using for applications, such as a touch panel, it becomes possible to suppress the fall of the visibility of a display.

  Moreover, the conductive substrate can also provide arbitrary layers other than the above-mentioned transparent base material, a copper layer, and a dry plating blackening layer. For example, an adhesive layer can be provided.

  A configuration example of the adhesion layer will be described.

  As described above, the metal layer can be formed on the transparent substrate, but when the metal layer is formed directly on the transparent substrate, the adhesion between the transparent substrate and the metal layer may not be sufficient. . For this reason, when a metal layer is directly formed on the upper surface of the transparent substrate, the metal layer may peel off from the transparent substrate during the manufacturing process or during use.

  So, in the conductive substrate of this embodiment, in order to improve the adhesiveness of a transparent base material and a metal layer, an adhesion layer can be arranged on a transparent base material.

  By arranging the adhesion layer between the transparent base and the metal layer, the adhesion between the transparent base and the metal layer can be enhanced, and peeling of the metal layer from the transparent base can be suppressed.

  The adhesion layer can also function as a blackening layer. For this reason, it is possible to suppress the reflection of light on the surface of the metal layer by the light from the lower surface side of the metal layer, that is, the transparent substrate side.

  The material constituting the adhesion layer is not particularly limited, and the adhesion between the transparent substrate and the metal layer, the required degree of suppression of light reflection on the surface of the metal layer, and the use of a conductive substrate It can be arbitrarily selected according to the degree of stability to the environment (eg, humidity, temperature) to be used.

  The adhesion layer preferably contains, for example, at least one metal selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. The adhesion layer can further contain one or more elements selected from carbon, oxygen, hydrogen and nitrogen.

  The adhesion layer can also contain a metal alloy containing at least two or more metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Also in this case, the adhesion layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as a metal alloy containing at least two or more metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, a Ni-Cu alloy, Ni-Cu-Cr alloy, Ni-Zn alloy, Ni-Zn-Cu alloy, Cu-Ti-Fe alloy, Cu-Ni-Fe alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy etc are preferable It can be used.

  Although the film-forming method of the adhesion layer is not particularly limited, it is preferable to form a film by dry plating. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method and the like can be preferably used. When the adhesion layer is formed by a dry plating method, it is more preferable to use a sputtering method because control of the film thickness is easy. As described above, one or more elements selected from carbon, oxygen, hydrogen and nitrogen can be added to the adhesion layer, and in this case, reactive sputtering can be more preferably used.

  In the case of forming the adhesion layer by sputtering, a target containing a metal species that constitutes the adhesion layer can be used as the target. When the adhesion layer contains an alloy, a target may be used for each metal species contained in the adhesion layer, and the alloy may be formed on the surface of a film-forming body such as a base material. An alloyed target can also be used.

  In addition, the adhesion layer containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be obtained by adding a gas containing the element to be added to the atmosphere when forming the adhesion layer. It is possible to form a film. For example, carbon monoxide gas and / or carbon dioxide gas when carbon is added to the adhesion layer, oxygen gas when oxygen is added, hydrogen gas and / or water when hydrogen is added, When nitrogen is added, nitrogen gas can be added to the atmosphere at the time of performing dry plating.

  A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas in dry plating. The inert gas is not particularly limited but, for example, argon can be preferably used.

  The adhesion between the transparent substrate and the adhesion layer can be enhanced by forming the adhesion layer by dry plating as described above. And since the adhesion layer can contain, for example, a metal as a main component, the adhesion to the metal layer is also high. For this reason, peeling of a metal layer can be suppressed by arrange | positioning an adhesion layer between a transparent base material and a metal layer.

  The thickness of the adhesion layer is not particularly limited, but is preferably 3 nm to 50 nm, more preferably 3 nm to 35 nm, and still more preferably 5 nm to 33 nm.

  When the adhesion layer is also made to function as a blackening layer, that is, when the reflection of light in the metal layer is suppressed, the thickness of the adhesion layer is preferably 3 nm or more as described above, and more preferably 5 nm or more .

  The upper limit of the thickness of the adhesion layer is not particularly limited, but even if it is thicker than necessary, the time required for film formation and the time required for etching when forming a wiring become longer, and the cost increases. It will incur. Therefore, as described above, the thickness of the adhesive layer is preferably 50 nm or less, more preferably 35 nm or less, and still more preferably 33 nm or less.

  Next, a configuration example of the conductive substrate of the present embodiment will be described.

  As described above, the conductive substrate of the present embodiment can include the transparent substrate, the metal layer, and the dry plating blackening layer.

  A specific configuration example will be described below using FIGS. 1 and 2. FIG. 1:, FIG. 2 has shown the example of sectional drawing in the surface parallel to the lamination direction of a transparent base material, a metal layer, and a dry plating blackening layer of the electroconductive substrate of this embodiment.

  For example, as in the case of the conductive substrate 10A shown in FIG. 1A, laminating the metal layer 12 and the dry plating blackening layer 13 one by one on the one surface 11a side of the transparent substrate 11 Can.

  In the conductive substrate 10A shown in FIG. 1A, the surface opposite to the first metal layer surface 12a and the first metal layer surface 12a is the surface of the metal layer 12 opposite to the transparent substrate 11; That is, the surface of the metal layer 12 facing the dry plating blackening layer 13 disposed on the metal layer 12 can be used as the second metal layer surface 12 b.

  Then, as described above, the second metal layer surface 12 b can be formed such that the surface roughness Ra thereof has a predetermined ratio to the thickness of the dry plating blackening layer 13.

  Further, as in the case of the conductive substrate 10B shown in FIG. 1 (b), metal layers 121 and 122 are provided on the side of one surface 11a of the transparent substrate 11 and the other surface (the other surface) 11b. And the dry plating blackening layers 131 and 132 can be stacked one by one in that order.

  Also in this case, the metal layers 121 and 122 have surfaces facing the transparent substrate 11 as the first metal layer surfaces 121a and 122a and the surfaces opposite to the first metal layer surfaces 121a and 122a as the second Metal layer surfaces 121b and 122b. Then, as described above, the second metal layer surfaces 121b and 122b can be formed such that the surface roughness Ra thereof has a predetermined ratio to the thickness of the dry plating blackening layers 131 and 132, respectively.

  Further, as described above, an adhesion layer may be further provided between the transparent substrate 11 and the metal layer 12.

  For example, as in the case of the conductive substrate 20A shown in FIG. 2A, the adhesion layer 14, the metal layer 12, and the dry plating blackening layer 13 are in this order on one surface 11a side of the transparent substrate 11. It can be stacked. Also in this case, the surface of the metal layer 12 facing the transparent substrate 11 is referred to as a first metal layer surface 12a, and the surface opposite to the first metal layer surface 12a is referred to as a second metal layer surface 12b. Can. Then, as described above, the second metal layer surface 12 b can be formed such that the surface roughness Ra thereof has a predetermined ratio to the thickness of the dry plating blackening layer 13.

  Further, as in the case of the conductive substrate 20B shown in FIG. 2 (b), the adhesion layers 141 and 142 are formed on one surface 11a of the transparent substrate 11 and the other surface (the other surface) 11b, respectively. The metal layers 121 and 122 and the dry plated blackening layers 131 and 132 can be stacked one by one in this order.

  Also in this case, the metal layers 121 and 122 have surfaces facing the transparent substrate 11 as the first metal layer surfaces 121a and 122a and the surfaces opposite to the first metal layer surfaces 121a and 122a as the second Metal layer surfaces 121b and 122b. Then, the second metal layer surfaces 121b and 122b have a surface roughness Ra as described above so as to have a predetermined ratio to the thickness of the dry-plated blackened layers 131 and 132 disposed on the respective metal layers. It can be formed into

  In addition, in FIG.1 (b) and FIG.2 (b), when the metal layer and the dry plating blackening layer are laminated | stacked on both surfaces of a transparent base material, the transparent base material 11 is made into the symmetry plane, and the transparent base material 11 is made. Although the example arrange | positioned so that the layer laminated | stacked on the upper and lower sides may become symmetrical was shown, it is not limited to the form which concerns. For example, in FIG. 2B, the metal layer 12 and the dry plating blackening layer 13 are laminated in that order on the side of the surface 11a of the transparent substrate 11 in the same manner as the structure of FIG. The layers stacked on the upper and lower sides of the transparent substrate 11 may have an asymmetric configuration.

  The conductive substrate of the present embodiment can be preferably used as a conductive substrate for a touch panel. In this case, the conductive substrate can have a mesh-like wiring.

  The conductive substrate provided with the mesh-like wiring can be obtained by etching the metal layer and the dry plating blackening layer of the conductive substrate of the present embodiment described above.

  For example, a two-layer wiring can be used to form a mesh-like wiring. A specific configuration example is shown in FIG. FIG. 3 is a view of the conductive substrate 30 provided with the mesh-like wiring as viewed from the upper surface side in the laminating direction of the metal layer etc., so that the transparent base 11 and the metal layer can be easily understood. Descriptions of layers other than the wirings 311 and 312 formed by patterning are omitted. Further, the wiring 312 which is seen through the transparent substrate 11 is also shown.

  The conductive substrate 30 shown in FIG. 3 has a transparent base 11, a plurality of wires 311 parallel to the Y-axis direction in the figure, and a wire 312 parallel to the X-axis direction. The wirings 311 and 312 are formed by etching a metal layer, and a dry plating blackening layer (not shown) is formed on the upper surface or the lower surface of the wirings 311 and 312. Moreover, the dry plating blackening layer is a transparent base material of the wiring 311, 312 in the cross-sectional shape in a plane parallel to the surface (hereinafter, also described as "main surface") on which the metal layer etc. It is preferable that the etching be performed so as to have the same shape as the cross-sectional shape in a plane parallel to the main surface 11 of FIG.

  The arrangement of the transparent base 11 and the wirings 311 and 312 is not particularly limited. The structural example of arrangement | positioning with the transparent base material 11 and wiring is shown to Fig.4 (a), (b). 4 (a) and 4 (b) correspond to cross-sectional views taken along the line A-A 'of FIG.

  First, as shown in FIG. 4A, the wirings 311 and 312 may be disposed on the upper and lower surfaces of the transparent substrate 11, respectively. In FIG. 4A, on the upper surface of the wiring 311 and the lower surface of the wiring 312, dry etching is performed so that the cross-sectional shape in the plane parallel to the main surface of the transparent substrate 11 becomes the same as the wiring 311 and 312. The plated blackening layers 321 and 322 are disposed.

  Further, as shown in FIG. 4B, using one pair of transparent base materials 111 and 112, the wirings 311 and 312 are disposed on the upper and lower surfaces with one of the transparent base materials 111 in between, and one wiring 312 may be disposed between the transparent substrates 111, 112. Also in this case, dry plating blackening layers 321 and 322 are etched on the upper surfaces of the wirings 311 and 312 so that the cross-sectional shape in the plane parallel to the main surface of the transparent substrate 111 becomes the same as the wiring 311 and 312. It is arranged.

  As described above, the conductive substrate of the present embodiment may have an adhesion layer in addition to the metal layer and the dry plating blackening layer. Therefore, in either case of FIGS. 4A and 4B, for example, an adhesion layer can be provided between the wiring 311 and / or the wiring 312 and the transparent substrate 11 (111, 112). When the adhesion layer is provided, the adhesion layer is also preferably etched so that the cross-sectional shape in a plane parallel to the main surface of the transparent substrate 11 (111, 112) becomes the same as the wiring 311, 312.

  For example, as shown in FIG. 1 (b), the conductive substrate having the mesh-like wiring shown in FIG. 3 and FIG. 4 (a) has metal layers 121 and 122 on both sides of the transparent substrate 11, and a dry plating blackening layer. It can form from the conductive substrate provided with 131,132.

  If the case where it forms using the conductive substrate of FIG.1 (b) is demonstrated to an example, first, the metal layer 121 and dry-plating blackening layer 131 at the side of one surface 11a of the transparent base material 11 will be shown in FIG. 2.) The etching is performed such that a plurality of linear patterns parallel to the middle Y-axis direction are arranged at predetermined intervals along the X-axis direction. The X-axis direction in FIG. 1B means a direction parallel to the width direction of each layer. Further, the Y-axis direction in FIG. 1 (b) means a direction perpendicular to the paper surface in FIG. 1 (b).

  Then, the metal layer 122 on the other surface 11 b side of the transparent substrate 11 and the dry plating blackening layer 132 have a plurality of linear patterns parallel to the X axis direction in FIG. Etching is performed so as to be arranged along the axial direction.

  By the above operation, the conductive substrate having the mesh-like wiring shown in FIG. 3 and FIG. 4A can be formed. In addition, the etching of both surfaces of the transparent base material 11 can also be performed simultaneously. That is, the etching of the metal layers 121 and 122 and the dry plating blackening layers 131 and 132 may be performed simultaneously. Further, in FIG. 4A, the conductive substrate having an adhesion layer patterned in the same shape as the wires 311 and 312 between the wires 311 and 312 and the transparent substrate 11 is shown in FIG. Instead of the conductive substrate 10B shown, the conductive substrate 20B shown in FIG. 2B can be used to perform etching in the same manner.

  The conductive substrate having the mesh-like wiring shown in FIG. 3 can also be formed by using two conductive substrates shown in FIG. 1 (a) or FIG. 2 (a). The case where the conductive substrate of FIG. 1A is formed using two sheets will be described by way of example. For the two conductive substrates shown in FIG. 1A, the metal layer 12 and the dry plating blackening layer 13 are respectively formed. The etching is performed such that a plurality of linear patterns parallel to the X-axis direction are arranged along the Y-axis direction at predetermined intervals. Then, by aligning two conductive substrates in a direction such that the linear patterns formed on the conductive substrates by the above etching process intersect with each other, a conductive substrate provided with a mesh-like wiring is obtained. be able to. The surface to be bonded when bonding the two conductive substrates is not particularly limited. For example, the surface A in FIG. 1 (a) in which the metal layer 12 and the like are laminated and the other surface 11b in FIG. 1 (a) in which the metal layer 12 and the like of the transparent substrate 11 are not laminated The structure shown in FIG. 4 (b) can also be obtained.

  Further, for example, the other surface 11b in FIG. 1 (a) where the metal layer 12 etc. of the transparent substrate 11 is not laminated is also bonded so that the cross section has a structure shown in FIG. 4 (a). it can.

  In FIGS. 4A and 4B, an adhesion layer patterned in the same shape as the wirings 311 and 312 is further provided between the wirings 311 and 312 and the transparent base material 11 (111 and 112). The conductive substrate can be manufactured by using the conductive substrate 20A shown in FIG. 2 (a) instead of the conductive substrate 10A shown in FIG. 1 (a).

  The width of the wires and the distance between the wires in the conductive substrate having the mesh-like wires shown in FIGS. 3 and 4 are not particularly limited, and may be selected according to, for example, the amount of current flowing through the wires. Can.

  Moreover, although the example which formed mesh-like wiring (wiring pattern) combining the wiring of linear shape in FIG. 3, FIG. 4 is shown, it is not limited to the form which concerns, A wiring pattern is comprised The wiring can be of any shape. For example, the shapes of the wires forming the mesh-like wiring pattern may be various shapes such as lines (zigzag straight lines) bent in a jagged manner so as not to generate moire (interference fringes) with the image of the display.

According to the conductive substrate of the present embodiment described above, the adhesion between the metal layer and the dry plating blackening layer is enhanced according to the thickness of the dry plating blackening layer, and the conductivity is excellent in etching uniformity. Substrate can be used.
(Method of manufacturing conductive substrate)
Next, a configuration example of the method of manufacturing the conductive substrate of the present embodiment will be described.

  The method of manufacturing a conductive substrate of the present embodiment can have the following steps.

The metal layer formation process of forming a metal layer on the at least one surface of a transparent base material.
A dry plating blackening layer forming step of forming a dry plating blackening layer on a metal layer by a dry plating method.
Then, in the metal layer forming step, the surface roughness Ra (μm) of the surface of the metal layer facing the dry plating blackening layer is 1.0 or more times the thickness (μm) of the dry plating blackening layer Can form a metal layer. In the dry plating blackening layer formation step, the surface roughness Ra (μm) of the surface of the metal layer facing the dry plating blackening layer is 1.0 times or more the thickness (μm) of the dry plating blackening layer The thickness of the dry plating blackening layer can also be adjusted so that

  Although the manufacturing method of the conductive substrate of this embodiment is described below, since it can set it as the case of the above-mentioned conductive substrate except the point explained below, explanation is omitted.

  First, the metal layer forming process will be described.

  In addition, the transparent base material which is provided to a metal layer formation process can be prepared beforehand (transparent base material preparation process). As the transparent substrate, as described above, for example, an insulator film that transmits visible light, a glass substrate, or the like can be used, and cutting or the like can be performed to any size as needed. In addition, about the insulator film which permeate | transmits visible light which can be used suitably, since it is stated above, description is abbreviate | omitted.

  The metal layer preferably has a metal thin film layer as described above. The metal layer can also have a metal thin film layer and a metal plating layer. Therefore, the metal layer forming step can include a metal thin film layer forming step of forming the metal thin film layer by, for example, dry plating. In the metal layer forming step, a metal thin film layer forming step of forming a metal thin film layer by dry plating method and a metal plating layer by electrolytic plating method which is a kind of wet plating method using the metal thin film layer as a feeding layer. And a metal plating layer forming step.

  As described above, it is preferable to form the metal layer by only the dry plating method or a combination of the dry plating method and the wet plating method, since the metal layer can be directly formed on the transparent substrate or the adhesion layer without intervention of an adhesive. .

  It does not specifically limit as a dry plating method used at a metal thin film layer formation step, For example, a vapor deposition method, sputtering method, or ion plating method etc. can be used. In addition, a vacuum evaporation method can be preferably used as an evaporation method. As a dry plating method used in the metal thin film layer forming step, a sputtering method is preferable because control of the film thickness is particularly easy.

  Next, the conditions for forming the metal plating layer by the wet plating method in the metal plating layer forming step, that is, the conditions for the electrolytic plating treatment are not particularly limited, and various conditions according to the ordinary method may be adopted. For example, a metal plating layer can be formed by supplying a base having a metal thin film layer formed in a plating tank containing a metal plating solution and controlling the current density and the conveyance speed of the base.

  However, in the method for producing a conductive substrate of the present embodiment, the metal layer formed in the metal layer forming step is positioned on the surface of the first metal layer facing the transparent substrate and on the opposite side of the surface of the first metal layer. And the second metal layer surface facing the dry plating blackening layer. And it is preferable to make surface roughness Ra of the 2nd metal layer surface into 1.0 time or more of the thickness of a dry plating blackening layer.

  The method of setting the second metal layer surface to the desired surface roughness Ra is not particularly limited, and any method can be used.

  As a method of setting the surface of the second metal layer to a desired surface roughness, for example, a method of setting the surface of the formed metal layer to a desired surface roughness by surface treatment such as etching, chemical polishing or blast And “The method of surface treatment of the formed metal layer”. In this case, the method of manufacturing a conductive substrate of the present embodiment can further include a surface treatment step of surface treatment of the metal layer after the metal layer formation step.

  Moreover, the method of making surface roughness of the outermost surface of a metal thin film layer into desired surface roughness by selecting sputtering conditions at the time of forming a metal thin film layer into a film (following, "sputtering conditions of a metal thin film layer are selected Method (described also). In addition, when a metal layer is comprised only from a metal thin film layer, the conditions for sputtering can be selected so that the outermost surface of a metal thin film layer becomes a desired surface roughness about a metal layer. In the case where the metal layer has a metal thin film layer and a metal plating layer, when forming a metal plating layer on the metal thin film layer, the surface roughness of the surface of the metal plating layer is desired for the metal layer The conditions of sputtering at the time of forming a metal thin film layer so that it may become surface roughness can be chosen.

  As another method, when the metal layer includes a metal thin film layer and a metal plating layer, the second metal layer surface is desirably roughened by selecting plating conditions for forming the metal plating layer. It can be done.

  Specifically, for example, in the metal plating layer forming step of forming a metal plating layer, PR current (Periodic Reverse current) plating is performed at an arbitrary timing in the latter half, and the surface roughness of the metal layer is made the desired surface roughness and Method (hereinafter, also described as “plating method using PR current”). The PR current plating is a plating method in which the direction of current is reversed at an arbitrary timing when forming a metal plating layer, and the direction of current can be reversed periodically. In PR current plating, part of the formed metal plating is dissolved by reversing the direction of the current. Therefore, the surface roughness of the metal plating layer can be easily adjusted.

  In this case, the metal plating layer forming step is a directional current metal plating layer forming step of supplying an electric current in a predetermined direction to form an initial metal plating layer, and a direction of current after the directional current metal plating layer forming step. And PR current plating step of periodically reversing PR current plating. That is, the metal layer forming step can include a metal thin film layer forming step, a directed current metal plating layer forming step, and a PR current metal plating layer forming step.

  The direct current metal plating layer forming step and the PR current metal plating layer forming step can be performed continuously.

  Moreover, it is preferable that the directional current metal plating layer forming step and the PR current metal plating layer forming step be performed in a single plating tank. This is because, by carrying out in a single plating tank, the crystals in the metal layer can be enlarged and the resistance of the metal layer can be reduced.

  As another method, for example, in the metal plating layer forming step of forming a metal plating layer, the current density (Dk value) is lowered at any timing in the latter half of the time in the latter half of the plating, and metal plating is performed at low current density. A method of forming a layer (hereinafter, also described as “plating method using low current density”) can be mentioned. By depositing the metal plating layer at a low current density, the surface of the deposited metal plating layer can be made rougher than before reducing the current density, so by adjusting the current density, desired surface roughness and can do.

In this case, the metal plating layer forming step is, for example, an initial metal plating layer forming step of forming an initial metal plating layer at a current density of 0.5 A / dm ² or more, and 0.1A after the initial metal plating layer forming step. And forming a roughened metal plated layer at a current density of not less than dm ^{2 and not} more than 0.5 A / dm ² . And a metal plating layer can be comprised with an initial stage metal plating layer and a roughening metal plating layer.

  In this case, the metal layer forming step can include a metal thin film layer forming step, an initial metal plating layer forming step, and a roughened metal plating layer forming step.

  Moreover, while performing each step about an initial stage metal plating layer formation step and a roughening metal plating layer formation step, current density does not need to be fixed and can also be changed.

For example, in the case of the initial metal plating layer forming step, the current density can be gradually increased to the target current density after the start of the step. The maximum current density in the initial metal plating layer forming step is preferably set to be larger than the current density in the roughened metal plating layer forming step described later. The upper limit value of the current density in the initial metal plating layer forming step is determined by the required thickness of the metal plating layer, the plating treatment tank length, the current density performance of the plating bath, etc., and is not particularly limited. It is preferable to set dm ² or less.

  And control of the current density in a roughening metal plating layer formation step is not limited, either, but, for example, a roughening metal plating layer is formed by keeping the current density constant in the roughening metal plating layer formation step set. be able to.

  Note that the initial metal plating layer forming step and the roughened metal plating layer forming step can be performed continuously. In this case, in the initial metal plating layer forming step, for example, the current density can be increased from the start current density at the start to the target maximum current density to form an initial metal plating layer. Then, immediately after reaching the set target maximum current density, or after holding for a predetermined time, the current density is reduced, for example, to the set current density in the roughened metal plating layer forming step, and the roughened metal plating layer forming step is performed. it can.

  Moreover, it is preferable to implement an initial stage metal plating layer formation step and a roughening metal plating layer formation step with a single plating tank. This is because, by carrying out in a single plating tank, the crystals in the metal layer can be enlarged and the resistance of the metal layer can be reduced.

  Above, as a method of making the surface of the second metal layer a desired surface roughness, a method of surface treating the formed metal layer, a method of selecting sputtering conditions of the metal thin film layer, a plating method using PR current, low Although plating methods using current density have been mentioned, these can be implemented by selecting any one method. Alternatively, the second metal layer surface can be made to have a desired surface roughness by selecting and combining two or more methods.

  Next, the dry plating blackening layer forming step will be described.

  In the dry plating blackening layer forming step, the dry plating blackening layer can be formed by the dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method and the like can be preferably used. In the case of forming a dry plating blackening layer by dry plating, it is more preferable to use a sputtering method because control of the film thickness is easy. As described above, one or more elements selected from carbon, oxygen, hydrogen and nitrogen can be added to the dry plating blackening layer, and in this case, reactive sputtering can be more preferably used. .

  When forming a dry plating blackening layer into a film by sputtering method, the target containing metal seed which comprises a dry plating blackening layer can be used. When the dry plating blackening layer contains an alloy, a target may be used for each metal species contained in the dry plating blackening layer, and the alloy may be formed on the surface of a film-forming body such as a substrate. The target which alloyed the metal contained in a metal-plating blackening layer can also be used.

  In addition, a dry plating blackening layer containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is a gas containing an element to be added in the atmosphere when forming the dry plating blackening layer. A film can be formed by adding it. For example, carbon monoxide gas and / or carbon dioxide gas is added when carbon is added to the dry plating blackened layer, oxygen gas is added when oxygen is added, hydrogen gas and / or hydrogen is added when hydrogen is added. Water can be added to the atmosphere at the time of dry plating, when nitrogen is added.

  A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas in dry plating. The inert gas is not particularly limited but, for example, argon can be preferably used.

  In the method of manufacturing a conductive substrate of the present embodiment, an arbitrary step can be further performed in addition to the above-described steps.

  For example, when forming an adhesion layer between a transparent base material and a metal layer, an adhesion layer formation process which forms an adhesion layer on the field which forms a metal layer of a transparent base material can be carried out. When the adhesion layer formation step is carried out, the metal layer formation step can be carried out after the adhesion layer formation step, and in the metal layer formation step, metal is formed on the base on which the adhesion layer is formed on the transparent substrate in this step. Can form a layer.

  In the adhesion layer forming step, the film formation method of the adhesion layer is not particularly limited, but it is preferable to form a film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method and the like can be preferably used. When the adhesion layer is formed by a dry plating method, it is more preferable to use a sputtering method because control of the film thickness is easy. As described above, one or more elements selected from carbon, oxygen, hydrogen and nitrogen can be added to the adhesion layer, and in this case, reactive sputtering can be more preferably used.

  In addition, about the material which can be suitably used for a metal layer, a dry plating blackening layer, an adhesion layer, suitable thickness, etc., since it is as stated in a conductive substrate, description is abbreviate | omitted here.

  The conductive substrate obtained by the method for producing a conductive substrate of the present embodiment can be used, for example, in various applications such as a touch panel. And when using for various uses, it is preferable that the metal layer contained in the conductive substrate of this embodiment and the dry plating blackening layer are patterned. In the case where the adhesion layer is provided, it is preferable that the adhesion layer is also patterned. The metal layer, and the dry plating blackening layer, and optionally the adhesion layer, can be patterned, for example, according to the desired wiring pattern, the metal layer, and the dry plating blackening layer, optionally, the adhesion layer, It is preferable that it is patterned so that the cross section in the surface parallel to the main surface of a transparent base material becomes the same shape.

  So, the manufacturing method of the conductive substrate of this embodiment can have the patterning process of patterning a metal layer and a dry plating blackening layer. When the adhesion layer is formed, the patterning process can be a process of patterning the adhesion layer, the metal layer, and the dry plating blackening layer.

  The specific procedure of the patterning step is not particularly limited, and can be performed by any procedure. For example, in the case of the conductive substrate 10A in which the metal layer 12 and the dry plating blackening layer 13 are laminated on the transparent substrate 11 as shown in FIG. 1A, first, the desired surface A on the dry plating blackening layer 13 is desired. A resist placement step may be performed to place a resist having a pattern. Then, an etching step can be performed in which the etching solution is supplied to the surface A on the dry plating blackening layer 13, ie, the side on which the resist is disposed.

  The etchant used in the etching step is not particularly limited, and can be arbitrarily selected according to the material constituting the layer to be etched. For example, the etching solution can be changed layer by layer, or the metal layer and the dry plating blackening layer, and in some cases, the adhesion layer can be simultaneously etched with the same etching solution.

  Further, as shown in FIG. 1B, patterning is also performed on the conductive substrate 10B in which the metal layers 121 and 122, and the dry plating blackening layers 131 and 132 are stacked on one surface 11a and the other surface 11b of the transparent substrate 11. A patterning process can be performed. In this case, for example, a resist disposing step of disposing a resist having a desired pattern on the surface A and the surface B on the dry plating blackening layers 131 and 132 can be performed. Then, an etching step may be performed in which the etching solution is supplied to the surface A and the surface B on the dry plating blackening layers 131 and 132, that is, the surface on which the resist is disposed.

  The pattern to be formed in the etching step is not particularly limited, and may have an arbitrary shape. For example, in the case of the conductive substrate 10A shown in FIG. 1 (a), as described above, the metal layer 12 and the dry plating blackening layer 13 may include a plurality of straight lines or lines (zigzag straight lines) bent into jagged lines. It can form a pattern.

  In the case of the conductive substrate 10B shown in FIG. 1B, the metal layer 121 and the metal layer 122 can form a pattern so as to form a mesh-like wiring. In this case, it is preferable to perform patterning so that the dry plating blackening layer 131 and the metal layer 121 have the same cross-sectional shape in a plane parallel to the one surface 11 a of the transparent substrate 11. Moreover, it is preferable to pattern so that the dry plating blackening layer 132 and the metal layer 122 may become the same cross-sectional shape in the surface parallel to the other surface 11b of the transparent base material 11.

  For example, after patterning the metal layer 12 etc. about the above-mentioned conductive substrate 10A at a patterning process, the lamination process of laminating two or more conductive substrates patterned can also be carried out. When laminating, for example, by laminating so that the patterns of the metal layers of the respective conductive substrates intersect, it is also possible to obtain a laminated conductive substrate provided with a mesh-like wiring.

  Although the method of fixing the laminated two or more conductive substrates is not particularly limited, for example, it can be fixed by an adhesive or the like.

  According to the conductive substrate obtained by the above method for producing a conductive substrate of the present embodiment, the adhesion between the metal layer and the dry plating blackening layer is enhanced according to the thickness of the dry plating blackening layer, A conductive substrate excellent in etching uniformity can be obtained.

The present invention will be described in more detail by the following specific examples and comparative examples, but the present invention is not limited by these examples.
(Evaluation method)
The evaluation method of the conductive substrate produced in the following experimental examples 1 to 7 will be described.
(1) Surface roughness Ra
In the following examples and comparative examples, the conductive substrate shown in FIG. 2A was produced. Then, when producing the conductive substrate, the surface roughness of the second metal layer surface 12 b of the metal layer 12 was evaluated after forming the metal layer 12 and before forming the dry plating blackening layer 13.

  The surface roughness Ra is measured using a shape analysis laser microscope (model: VK-X150, manufactured by Keyence Corporation), and is shown as Ra in Table 1.

Moreover, it calculated also about Ra / t which divided surface roughness Ra by thickness t of the dry plating blackening layer. The thickness t is 0.02 μm (20 nm) in any of the experimental examples.
(2) Etching time difference An aqueous solution in which 3 mass% ferric chloride and 0.3 mass% hydrochloric acid were mixed was prepared as an etching liquid, and the temperature of the etching liquid was maintained at room temperature (25 ° C.).

  Then, the conductive substrate produced in each of the experimental examples having a width of 40 cm was immersed in the etching solution. Under the present circumstances, when it sees from the surface 13b side of the dry-plating blackening layer 13 of a conductive substrate, a transparent base material is exposed in three points of the both ends of the width direction of a conductive substrate, and the central part of the width direction. The time (seconds) required for the dissolution was measured. In addition, these are located on the same straight line along the width direction. Then, the time required for dissolution was compared at three measurement points, and the difference between the longest time and the short time was calculated as an etching time difference (seconds).

According to the examination of the inventors of the present invention, if the etching time difference is 6 seconds or less, a desired fine wiring pattern can be formed, and it can be said that the substrate is a conductive substrate excellent in etching uniformity. For this reason, when the etching time difference was less than 6 seconds, it evaluated as (circle) and set it as the pass. And when it was longer than 6 seconds, it evaluated as x and made it rejection.
(Conditions of preparation of conductive substrate)
The preparation conditions of the conductive substrate in each experimental example and the evaluation result are shown below. In addition, Experimental example 1-Experimental example 4 become an Example, Experimental example 5-Experimental example 7 become a comparative example.
[Experimental Example 1]
A conductive substrate having the structure shown in FIG. 2 (a) was produced.
(Transparent base material preparation process, adhesion layer formation process)
First, an adhesion layer was formed on one side of a 100 μm thick transparent substrate made of polyethylene terephthalate resin (PET).

  In addition, it was 97% when the visible light transmittance | permeability was evaluated by the method prescribed | regulated to JISK7361-1 about the transparent base material made from the polyethylene terephthalate resin used as a transparent base material.

The adhesion layer was formed by sputtering using a target of a nickel-copper alloy containing 70 wt% of nickel and 30 wt% of copper. In the film formation, the above-mentioned transparent substrate from which moisture has been removed by heating to 60 ° C. in advance is set in the chamber of the sputtering apparatus, the chamber is evacuated to 1 × 10 ⁻⁴ Pa or less, and then oxygen is introduced into the chamber. Oxygen-argon gas containing 30% by volume of gas was introduced, and the pressure in the chamber was 0.3 Pa.

Then, electric power was supplied to the target under such an atmosphere, and an adhesion layer composed of a Ni—Cu alloy containing oxygen was formed on one of the main surfaces of the transparent substrate so as to have a thickness of 20 nm.
(Metal layer formation process)
Subsequently, a metal layer was formed on the adhesion layer of the transparent substrate on which the adhesion layer was formed.

  A metal layer was formed into a film by implementing a metal thin film layer formation step, an initial stage metal plating layer formation step, and a roughening metal plating layer formation step. Each step will be described below.

  The metal thin film layer has a thickness on the upper surface of the adhesion layer in the same manner as in the case of the adhesion layer except that a copper target is used as a target and the inside of the chamber is evacuated and then argon gas is introduced instead of oxygen-argon gas. A copper thin film layer was formed as a metal thin film layer of 80 nm.

  In the initial metal plating layer forming step and the roughened metal plating layer forming step, the base material having the adhesion layer and the metal thin film layer formed on the transparent base material is supplied to the metal plating tank and continuous in a single plating tank It carried out.

As a plating solution, a copper plating solution to which diallyldimethyl ammonium chloride-SO ₂ copolymer was added was used. Specifically, a copper plating solution prepared so that the concentrations of copper, sulfuric acid and chlorine were 30 g / L of copper, 80 g / L of sulfuric acid and 50 mg / L of chlorine was used. The copper plating solution used, DDAC-SO ₂ copolymer above the (diallyl dimethyl ammonium chloride -SO ₂ copolymer) are added to a 20 mg / L as an additive. In addition to DDAC, the plating solution contains 650 mg / L of PEG (polyethylene glycol) as the polymer component and 15 mg / L of SPS (bis (3-sulfopropyl) disulfide) as the brightener component. . The plating solution was adjusted to 30 ° C. and used in the following initial metal plating layer forming step and roughened metal plating layer forming step.

Then, first, as an initial metal plating layer formation step, the current density is started from 0.5 A / dm ² , and the current density is increased to 2.0 A / dm ² as the plating thickness becomes thicker, and held for 2 minutes. The plating layer formation step was completed.

Subsequently, the roughened metal plating layer forming step was performed at a current density of 0.3 A / dm ² . The time for the roughened metal plating layer formation step was 0.5 minutes.

  In addition, the 0.5-micrometer-thick copper plating layer was formed as a metal plating layer by implementing a metal plating layer formation step and a roughening metal plating layer formation step. Therefore, as a metal layer, a copper thin film layer and a copper plating layer were combined to form a 0.58 μm thick copper layer.

After the metal layer forming step, before performing the dry plating blackening layer forming step, the surface roughness of the surface of the second metal layer was evaluated by the method described above. The results are shown in Table 1.
(Dry plating darkening layer formation process)
In the same manner as in the adhesion layer, a nickel-copper alloy layer containing oxygen was formed as a dry plating blackening layer by a dry plating method.
[Experimental Example 2 to Experimental Example 7]
In each experimental example, the time for carrying out the step of forming the roughened metal plating layer was changed, and the surface roughness Ra of the surface of the metal layer facing the dry plating blackening layer was made to be a value shown in Table 1 In the same manner as in Experimental Example 1, production and evaluation of a conductive substrate were performed. The results are shown in Table 1.

表１に示した結果から、実施例であり、金属層の乾式めっき黒化層と対向する面である第２の金属層表面の表面粗さＲａ（μｍ）が、乾式めっき黒化層の厚さ（μｍ）の１．０倍以上である実験例１〜実験例４は、評価が〇になっていることが確認できる。すなわち、エッチング均一性に優れた導電性基板であることが確認できる。

From the results shown in Table 1, which is an example, the surface roughness Ra (μm) of the surface of the second metal layer which is a surface opposite to the dry plating blackening layer of the metal layer is the thickness of the dry plating blackening layer In Experimental Examples 1 to 4 which are 1.0 times or more the height (μm), it can be confirmed that the evaluation is 〇. That is, it can be confirmed that the conductive substrate is excellent in etching uniformity.

  On the other hand, in the comparative example, the surface roughness Ra (μm) of the surface of the second metal layer which is the surface facing the dry plating blackening layer of the metal layer is the thickness (μm) of the dry plating blackening layer In Experimental Examples 5 to 7 which are less than 1.0 times the value of), it can be confirmed that the evaluation is x. Therefore, the conductive substrate produced in Experimental Example 5 to Experimental Example 7 is a conductive substrate having no etching uniformity, and may not have a desired shape when forming a wiring pattern.

10A, 10B, 20A, 20B, 30 Conductive substrate 11, 111, 112 Transparent substrate 12, 121, 122 Metal layer 13, 131, 132, 321, 322 Dry plating blackening layer

Claims (2)

A transparent substrate,
A metal layer disposed on at least one surface of the transparent substrate;
And dry plating blackening layer disposed on the metal layer;
Surface roughness of the dry plating blackening layer facing the surface of the metal layer Ra ([mu] m) is state, and are 1.0 times or more of the thickness of the dry plating blackening layer ([mu] m),
Conductive substrate wherein the metal layer is that having a metal plating layer. 2. The conductive substrate according to claim 1, wherein a surface roughness Ra of a surface of the metal layer facing the dry plating blackening layer is 0.022 μm or more.

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