JP6500746B2 - Method of manufacturing conductive substrate - Google Patents

Description

  The present invention relates to a method of manufacturing a conductive substrate.

  The capacitive touch panel converts information on the position of the adjacent object on the panel surface into an electrical signal by detecting a change in capacitance caused by the object in proximity to the panel surface. Since the conductive substrate used in the capacitive touch panel is disposed on the surface of the display, the wiring material of the conductive substrate is required to have a low reflectance and be hard to be recognized.

  Therefore, as a wiring material used for the capacitive touch panel, a material having a low reflectance and which is hard to be recognized is used, and a wiring is formed on a transparent substrate or a transparent film. For example, Patent Document 1 discloses a transparent conductive film for a touch panel in which an ITO (indium tin oxide) film is formed as a transparent conductive film on a polymer film.

  By the way, in recent years, the screen size of a display provided with a touch panel has been increased, and correspondingly, the area of a conductive substrate such as a transparent conductive film for a touch panel is also required to be increased. However, ITO has a problem of being unsuitable for a large-sized panel because the electrical resistance value is high and the signal is deteriorated.

  For this reason, using metal wiring by copper etc. instead of ITO as disclosed by patent document 2, 3 is examined, for example. However, metal, which is a material of the metal wiring, has a metallic luster, and therefore, there is a problem that the visibility of the display is reduced by the reflection.

  Therefore, after forming a metal layer on a transparent substrate, a blackening layer is formed on the upper surface of the metal layer to suppress light reflection on the surface of the metal layer by dry plating or the like, and the metal layer and the blackening layer are patterned. It has been studied to form a conductive substrate in which a blackening layer is formed on the upper surface of the metal wiring.

Unexamined-Japanese-Patent No. 2003-151358 JP, 2011-018194, A JP, 2013-069261, A

As described above, the conductive substrate having the metal layer and the blackening layer and having the desired wiring pattern is obtained by forming the metal layer and the blackening layer on the transparent substrate, and then forming the black layer and the black layer. The passivation layer can be formed by etching according to the desired wiring pattern. For this reason, the blackened layer is required to have low reflectance and good etchability.
However, a blackened layer having a low reflectance and an excellent etching property has not been known.

  SUMMARY OF THE INVENTION In view of the problems of the prior art, it is an object of the present invention to provide a conductive substrate provided with a blackened layer having a low reflectance and an excellent etching property.

In one aspect of the present invention to solve the above problems,
A metal layer forming step of forming a metal layer which is a copper layer on at least one surface of the transparent substrate;
And b. Forming a blackening layer on the metal layer.
In the blackening layer forming step,
A blackening layer forming step of forming a blackening layer containing nickel, copper and oxygen;
The present invention provides a method for producing a conductive substrate, comprising a surface treatment step of bringing the surface of the blackening layer into contact with an acid-containing aqueous solution.

  According to one aspect of the present invention, it is possible to provide a conductive substrate provided with a blackened layer having a low reflectance and an excellent etching property.

BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. The top view of the conductive substrate provided with the mesh-like wiring concerning the embodiment of the present invention. Sectional drawing in the AA 'line of FIG.

Hereinafter, one embodiment of the manufacturing method of the conductive substrate of the present invention is described.
(Method of manufacturing conductive substrate)
The method for producing a conductive substrate of the present embodiment can have the following steps.

The metal layer formation process of forming a metal layer on the at least one surface of a transparent base material.
Blackening layer formation process which forms a blackening layer on a metal layer.
And a blackening layer formation process can have the following steps further.
A blackening layer forming step of forming a blackening layer containing nickel, copper and oxygen.
A surface treatment step of bringing the surface of the blackening layer into contact with an acid-containing aqueous solution.

  The conductive substrate in the present embodiment refers to a substrate having a metal layer and a blackening layer on the surface of a transparent base before etching a metal layer or the like, and a metal layer or the like according to a desired wiring pattern. It includes an etched substrate, that is, a wiring substrate. The conductive substrate after etching the metal layer and the blackening layer can transmit light because the transparent substrate includes a region not covered by the metal layer or the like, and thus becomes a transparent conductive substrate.

  Here, first, each member included in the conductive substrate will be described below.

  The transparent substrate is not particularly limited, and a transparent substrate such as a resin substrate (resin film) which transmits visible light or a glass substrate can be preferably used.

  As a material of the resin substrate which transmits visible light, for example, resins such as polyamide resin, polyethylene terephthalate resin, polyethylene naphthalate resin, cycloolefin resin, polyimide resin, and polycarbonate resin can be preferably used. In particular, PET (polyethylene terephthalate), COP (cycloolefin polymer), PEN (polyethylene naphthalate), polyamide, polyimide, polycarbonate and the like can be more preferably used as the material of the resin substrate that transmits visible light.

  The thickness of the transparent substrate is not particularly limited, and can be arbitrarily selected according to the strength, the capacitance, the light transmittance, etc. required for the conductive substrate. The thickness of the transparent substrate can be, for example, 10 μm or more and 200 μm or less. In particular, when used for touch panel applications, the thickness of the transparent substrate is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. When used for touch panel applications, for example, in applications where it is required to reduce the thickness of the entire display, the thickness of the transparent substrate is preferably 20 μm to 50 μm.

  The total light transmittance of the transparent substrate is preferably high. For example, the total light transmittance is preferably 30% or more, more preferably 60% or more. When the total light transmittance of the transparent substrate is in the above range, the visibility of the display can be sufficiently ensured, for example, when used for a touch panel application.

  In addition, the total light transmittance of a transparent base material can be evaluated by the method prescribed | regulated to JISK7361-1.

  Next, the metal layer will be described.

  The material which comprises a metal layer is not specifically limited, Although the material which has the electrical conductivity according to the application can be selected, For example, the material which comprises a metal layer is Cu, Ni, Mo, Ta, Ti, V, Cr Preferably, it is a copper alloy with at least one or more metals selected from Fe, Mn, Co, W, or a material containing copper. The metal layer can also be a copper layer composed of copper.

  The method of forming the metal layer on the transparent substrate is not particularly limited, but in order not to reduce the light transmittance, it is preferable not to dispose an adhesive between the transparent substrate and the metal layer. That is, the metal layer is preferably formed directly on at least one surface of the transparent substrate. When the adhesion layer is disposed between the transparent substrate and the metal layer as described later, the metal layer is preferably formed directly on the upper surface of the adhesion layer.

  In order to form a metal layer directly on the upper surface of the transparent substrate, the metal layer preferably has a metal thin film layer. Also, the metal layer may have a metal thin film layer and a metal plating layer.

  For example, a metal thin film layer can be formed on a transparent substrate by a dry plating method, and the metal thin film layer can be used as a metal layer. Thus, the metal layer can be formed directly on the transparent substrate without the use of an adhesive. In addition, although a dry plating method will be described in detail later, for example, a sputtering method, a vapor deposition method, an ion plating method and the like can be preferably used.

  Moreover, when making the film thickness of a metal layer thick, a metal thin film layer and a metal plating layer are formed by forming a metal plating layer by the electroplating method which is 1 type of the wet plating method by using a metal thin film layer as a feed layer. It can also be made to have a metal layer. Since the metal layer includes the metal thin film layer and the metal plating layer, the metal layer can be formed directly on the transparent substrate without an adhesive.

  The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wire, it can be arbitrarily selected according to the magnitude of the current supplied to the wire, the wire width, and the like.

  However, if the metal layer is thick, side etching tends to occur because etching takes time to perform the wiring pattern formation, which may cause problems such as difficulty in forming fine lines. Therefore, the thickness of the metal layer is preferably 5 μm or less, more preferably 3 μm or less.

  Further, in particular, from the viewpoint of lowering the resistance value of the conductive substrate and enabling sufficient current supply, for example, the thickness of the metal layer is preferably 50 nm or more, more preferably 60 nm or more, and 150 nm It is more preferable that it is more than.

  In addition, when a metal layer has a metal thin film layer and a metal plating layer as mentioned above, it is preferable that the sum total of the thickness of a metal thin film layer and the thickness of a metal plating layer is the said range.

  The thickness of the metal thin film layer is not particularly limited in either case where the metal layer is constituted of a metal thin film layer or in the case where the metal layer has a metal thin film layer and a metal plating layer, For example, it is preferable to set it as 50 to 500 nm.

  The metal layer can be used as a wiring by patterning, for example, a desired wiring pattern as described later. And since the metal layer can lower the electric resistance value than ITO conventionally used as a transparent conductive film, the electric resistance value of the conductive substrate can be reduced by providing the metal layer.

  Next, the blackening layer will be described.

  The blackening layer can be formed on the top surface of the metal layer, and can contain Ni, Cu, and O.

  The inventors of the present invention have conventionally studied a blackened layer containing Ni, Cu and O. However, the blackened layer containing Ni, Cu, and O was more difficult to etch than the underlying metal layer when wiring was processed by etching, and in particular, it was more difficult to etch when the introduced amount of oxygen gas increased. . On the other hand, when the amount of oxygen gas is small, there is a problem that the reflectance of the blackened layer becomes high, and for these reasons, it is difficult to achieve both the etching property and the low reflectance.

  Therefore, the inventors of the present invention conducted further studies, and after forming a blackened layer for a blackened layer containing Ni, Cu and O, the surface is treated with an aqueous solution containing an acid. The present invention has been completed by finding that a blackened layer having both low reflectance and etching properties can be formed.

  The method for forming the blackening layer is not particularly limited, but the blackening layer is preferably formed by a dry method.

  When forming a blackening layer into a film by a dry method, the specific method is not specifically limited, For example, dry-plating methods, such as a sputtering method, an ion plating method, a vapor deposition method, can be used preferably. When forming a blackening layer into a film by a dry process, since control of a film thickness is easy, it is more preferable to use sputtering method.

  In addition, since the blackening layer can contain oxygen as described above, it is particularly preferable to form a film by reactive sputtering.

  In the case of forming a blackened layer by reactive sputtering, a target containing Ni and Cu constituting the blackened layer can be used as a target. For example, a target of a Ni-Cu alloy can be preferably used.

  Then, by adding oxygen to the inert gas when forming the blackening layer, it is possible to form a blackening layer containing Ni, Cu and O. The inert gas is also not particularly limited, but, for example, argon can be preferably used.

  In the blackened layer, the states of Ni, Cu, and O are not particularly limited. For example, each component may be contained in a single state without forming a compound, and an alloy, an oxide, water, etc. It may be contained by forming a compound such as an oxide. That is, the blackened layer according to the present embodiment can contain Ni, Cu, and O in one or more states selected from among simple substances, alloys, oxides, hydroxides, and the like.

  And it is preferable that the blackening layer is surface-treated by the acid containing aqueous solution about the surface, ie, the surface on the opposite side to the surface facing the metal layer. The surface treatment with the acid-containing aqueous solution will be described later.

  The thickness of the blackening layer is not particularly limited, but is preferably 15 nm or more, and more preferably 25 nm or more. This is because when the thickness of the blackening layer is thin, reflection of light on the surface of the metal layer may not be sufficiently suppressed, so by setting the thickness of the blackening layer to 15 nm or more as described above It is because it is preferable to comprise so that reflection of the light in the layer surface can be suppressed especially.

  The upper limit of the thickness of the blackening layer is not particularly limited, but even if it is thicker than necessary, the time required for film formation and the time required for etching when forming a wiring become longer, and the cost rises Will lead to Therefore, the thickness of the blackening layer is preferably 70 nm or less, more preferably 50 nm or less.

  The conductive substrate can also have any layer other than the above-mentioned transparent substrate, metal layer and blackening layer. For example, an adhesive layer can be provided.

  A configuration example of the adhesion layer will be described.

  As described above, the metal layer can be formed on the transparent substrate, but when the metal layer is formed directly on the transparent substrate, the adhesion between the transparent substrate and the metal layer may not be sufficient. . For this reason, when a metal layer is directly formed on the upper surface of the transparent substrate, the metal layer may peel off from the transparent substrate during the manufacturing process or during use.

  So, in the conductive substrate of this embodiment, in order to improve the adhesiveness of a transparent base material and a metal layer, an adhesion layer can be arranged on the field which forms the metal layer of a transparent base material.

  By arranging the adhesion layer between the transparent base and the metal layer, the adhesion between the transparent base and the metal layer can be enhanced, and peeling of the metal layer from the transparent base can be suppressed.

  The adhesion layer can also function as a blackening layer. For this reason, it becomes possible to suppress reflection of light of the metal layer by light from the lower surface side of the metal layer, that is, the transparent substrate side.

  The material constituting the adhesion layer is not particularly limited, and the adhesion between the transparent substrate and the metal layer, the required degree of suppression of light reflection on the surface of the metal layer, and the use of a conductive substrate It can be arbitrarily selected according to the degree of stability to the environment (eg, humidity, temperature) to be used.

  The adhesion layer preferably contains, for example, at least one metal selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. The adhesion layer can further contain one or more elements selected from carbon, oxygen, hydrogen and nitrogen.

  The adhesion layer can also include a metal alloy containing at least two or more metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Also in this case, the adhesion layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as a metal alloy containing at least two or more kinds of metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, for example, Cu-Ti-Fe Alloys, Cu-Ni-Fe alloys, Ni-Cu alloys, Ni-Zn alloys, Ni-Ti alloys, Ni-W alloys, Ni-Cr alloys, Ni-Cu-Cr alloys, etc. can be preferably used. In particular, a Ni-Cu alloy can be more preferably used.

  Although the film-forming method of the adhesion layer is not particularly limited, it is preferable to form a film by dry plating. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method and the like can be preferably used. When the adhesion layer is formed by a dry plating method, it is more preferable to use a sputtering method because control of the film thickness is easy. As described above, one or more elements selected from carbon, oxygen, hydrogen and nitrogen can be added to the adhesion layer, and in this case, reactive sputtering can be more preferably used.

  When the adhesion layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, the atmosphere for forming the adhesion layer includes one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. Can be added to the adhesive layer by adding a gas containing. For example, carbon monoxide gas and / or carbon dioxide gas when carbon is added to the adhesion layer, oxygen gas when oxygen is added, hydrogen gas and / or water when hydrogen is added, When nitrogen is added, nitrogen gas can be added to the atmosphere at the time of performing dry plating.

  A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas at the time of dry plating. The inert gas is not particularly limited but, for example, argon can be preferably used.

  The adhesion between the transparent substrate and the adhesion layer can be enhanced by forming the adhesion layer by dry plating as described above. And since the adhesion layer can contain, for example, a metal as a main component, the adhesion to the metal layer is also high. For this reason, peeling of a metal layer can be suppressed by arrange | positioning an adhesion layer between a transparent base material and a metal layer.

  The thickness of the adhesion layer is not particularly limited, but is preferably 3 nm to 50 nm, more preferably 3 nm to 35 nm, and still more preferably 3 nm to 33 nm.

  When the adhesion layer is also made to function as a blackening layer, that is, when the reflection of light in the metal layer is suppressed, the thickness of the adhesion layer is preferably 3 nm or more as described above.

  The upper limit of the thickness of the adhesion layer is not particularly limited, but even if it is thicker than necessary, the time required for film formation and the time required for etching when forming a wiring become longer, and the cost increases. It will incur. Therefore, as described above, the thickness of the adhesive layer is preferably 50 nm or less, more preferably 35 nm or less, and still more preferably 33 nm or less.

  Next, a configuration example of the conductive substrate will be described.

  As described above, the conductive substrate of the present embodiment can have a transparent substrate, a metal layer, and a blackening layer. Moreover, layers, such as an adhesion layer, can also be provided arbitrarily.

  A specific configuration example will be described below with reference to FIG. FIG. 1 shows an example of a cross-sectional view in a plane parallel to the stacking direction of the transparent base, the metal layer and the blackening layer of the conductive substrate of the present embodiment.

  The conductive substrate of the present embodiment can have, for example, a structure in which a metal layer and a blackening layer are laminated in this order from the transparent substrate side on at least one surface of the transparent substrate.

  A specific configuration example will be described below using FIGS. 1 and 2. 1 and 2 show an example of a cross-sectional view in a plane parallel to the stacking direction of the transparent base, the metal layer and the blackening layer of the conductive substrate of the present embodiment.

  For example, as in the case of the conductive substrate 10A shown in FIG. 1A, the metal layer 12 and the blackening layer 13 can be stacked one by one on the one surface 11a side of the transparent substrate 11 in this order. . Further, as in the case of the conductive substrate 10B shown in FIG. 1 (b), the metal layers 12A and 12B are provided on one surface 11a side of the transparent substrate 11 and the other surface (the other surface) 11b side. And the blackening layers 13A and 13B can be stacked one by one in this order.

  Further, for example, an adhesion layer may be provided between the transparent substrate 11 and the metal layer 12. For example, as in the case of the conductive substrate 20A shown in FIG. 2A, the adhesion layer 14, the metal layer 12, and the blackening layer 13 are laminated in this order on one surface 11a side of the transparent substrate 11. be able to.

  Also in this case, the adhesion layer, the metal layer, and the blackening layer can be laminated on both surfaces of the transparent substrate 11. Specifically, as in the conductive substrate 20B shown in FIG. 2 (b), the adhesion layer 14A is formed on one surface 11a of the transparent substrate 11 and the other surface (the other surface) 11b. , 14B, the metal layers 12A, 12B, and the blackening layers 13A, 13B can be stacked in that order.

  In addition, in the structural example of FIG.1 (b) and FIG.2 (b) which laminated | stacked the metal layer and the blackening layer on both surfaces of a transparent base material, the transparent base material 11 makes the transparent base material 11 a symmetry plane. Although the example arrange | positioned so that the layer laminated | stacked on the upper and lower sides may become symmetrical was shown, it is not limited to the form which concerns. For example, in FIG. 2B, a configuration in which the metal layer 12 and the blackening layer 13 are laminated in the same order as the configuration of FIG. And the other surface (the other surface) 11b side is the adhesion layer 14B, the metal layer 12B and the blackening layer 13B in the form of laminating in that order, the layers laminated on the upper and lower sides of the transparent substrate 11 are asymmetric It is good also as composition.

  So far, the conductive substrate of the present embodiment has been described, but in the conductive substrate of the present embodiment, since the metal layer and the blackening layer are provided on the transparent substrate, the light by the metal layer is obtained. Reflection can be suppressed. Therefore, by providing the blackening layer, for example, when used for a touch panel or the like, good visibility can be obtained.

  The degree of reflection of light of the conductive substrate of the present embodiment is not particularly limited. For example, the average reflectance of light with a wavelength of 400 nm or more and 700 nm or less is preferably 10% or less, and 8% or less Is more preferably 7% or less. This is because when the average of the reflectance of light with a wavelength of 400 nm or more and 700 nm or less is 10% or less, a decrease in the visibility of the display can be particularly suppressed even when used as a conductive substrate for a touch panel, for example.

  The light reflectance of the conductive substrate can be measured by irradiating the blackened layer with light. That is, measurement can be performed by irradiating light from the blackened layer side among the metal layer and the blackened layer contained in the conductive substrate. Specifically, for example, when the metal layer 12 and the blackening layer 13 are laminated in this order on one surface 11a of the transparent substrate 11 as shown in FIG. 1A, black can be irradiated so that the blackening layer 13 can be irradiated with light. The surface A of the passivation layer 13 can be measured by irradiating light.

  In addition, although a conductive substrate can form wiring by etching a metal layer and a blackening layer as mentioned later, the said reflectance is arrange | positioned at the outermost surface, when a transparent base material is remove | excluded among conductive substrates. Shows the reflectance of the surface on the light incident side of the blackened layer. For this reason, it is preferable that the measurement value in the part in which the metal layer and the blackening layer remain | survive satisfy | fills the said range before an etching process or after performing an etching process.

  In addition, the average of the reflectance of light means the average value of the measurement result at the time of changing a wavelength within the range of 400 nm or more and 700 nm or less, and measuring. In the measurement, the interval for changing the wavelength is not particularly limited. For example, it is preferable to change the wavelength every 10 nm to measure the light in the above wavelength range, and change the wavelength every 1 nm to It is more preferred to make measurements on light.

  The conductive substrate of the present embodiment can be preferably used, for example, as a conductive substrate for a touch panel as described above. In this case, the conductive substrate can be configured to have a metal layer and a wiring pattern having an opening in the blackening layer. More preferably, a mesh-like wiring can be provided.

  The conductive substrate on which the wiring pattern having the opening is formed can be obtained by etching the metal layer and the blackening layer of the conductive substrate of the present embodiment described above. For example, a two-layer wiring can be used to form a mesh-like wiring. A specific configuration example is shown in FIG. FIG. 3 is a view of the conductive substrate 30 provided with the mesh-like wiring as viewed from the upper surface side in the stacking direction of the metal layer and the blackening layer. The conductive substrate 30 shown in FIG. 3 has a transparent base 11, a plurality of wirings 31A parallel to the Y-axis direction in the drawing, and a wiring 31B parallel to the X-axis direction. The wirings 31A and 31B are formed by etching a metal layer, and a blackening layer (not shown) is formed on the upper surface or the lower surface of the wirings 31A and 31B. Also, the blackening layer is etched in the same shape (pattern) as the wirings 31A and 31B.

  The arrangement of the transparent substrate 11 and the wirings 31A and 31B is not particularly limited. The structural example of arrangement | positioning with the transparent base material 11 and wiring is shown to Fig.4 (a), (b). 4 (a) and 4 (b) correspond to cross-sectional views taken along the line A-A 'of FIG.

  First, as shown in FIG. 4A, the wirings 31A and 31B may be disposed on the upper and lower surfaces of the transparent substrate 11, respectively. In this case, blackened layers 32A and 32B etched in the same shape as the wiring are disposed on the upper surface of the wiring 31A and the lower surface of the wiring 31B. Further, as shown in FIG. 4B, the wires 31A and 31B are disposed on the upper and lower surfaces of one transparent base 11 using one set of the transparent base 11, and the one wiring 31B is It may be disposed between the transparent substrates 11. Also in this case, blackened layers 32A and 32B etched in the same shape as the wirings are disposed on the top surfaces of the wirings 31A and 31B.

  As described above, an adhesive layer may be provided between the metal layer and the transparent substrate. When the adhesion layer is provided, it is preferable that the adhesion layer be etched to have the same shape as the wiring.

  For example, as shown in FIG. 1 (b), the conductive substrate having the mesh-like wiring shown in FIG. 3 and FIG. 4 (a) has metal layers 12A and 12B and blackening layer 13A on both sides of the transparent substrate 11. 13B, and can be formed from a conductive substrate.

  Specifically, first, the metal layer 12A and the blackening layer 13A on the side 11a of the transparent substrate 11 of the conductive substrate shown in FIG. 1 (b) are parallel to the Y-axis direction in FIG. 1 (b). The etching is performed such that a plurality of linear patterns are arranged at predetermined intervals along the X-axis direction. Here, the X-axis direction in FIG. 1 (b) means a direction parallel to the width direction of each layer in FIG. 1 (b). Further, the Y-axis direction means a direction perpendicular to the paper surface in FIG. 1 (b). Then, a plurality of linear patterns parallel to the X-axis direction in FIG. 1B are formed along the Y-axis direction with the metal layer 12B and the blackening layer 13B on the other surface 11b side of the transparent substrate 11 predetermined. Etching is performed so as to be spaced apart.

  By the above operation, the conductive substrate having the mesh-like wiring shown in FIG. 3 and FIG. 4A can be formed. In addition, the etching of both surfaces of the transparent base material 11 can also be performed simultaneously. That is, the etching of the metal layers 12A and 12B and the blackening layers 13A and 13B may be performed simultaneously.

  Further, in the case of providing an adhesive layer between the transparent base 11 and the wirings 31A and 31B in the conductive substrate having the mesh-like wiring shown in FIG. 4A, it is shown in FIG. 1B. Instead of the above conductive substrate, the conductive substrate shown in FIG. 2B can be used. In this case, the adhesion layers 14A and 14B can also be obtained by etching in the same manner as the metal layers 12A and 12B and the like.

  The conductive substrate having the mesh-like wiring shown in FIG. 3 can also be formed by using two conductive substrates shown in FIG. 1 (a) or FIG. 2 (a). When the conductive substrate of FIG. 1A is used as an example, the metal layer 12 and the blackening layer 13 are parallel to the X-axis direction for the two conductive substrates shown in FIG. 1A. The etching is performed such that a plurality of linear patterns are arranged at predetermined intervals along the Y-axis direction. Then, by aligning two conductive substrates in a direction such that the linear patterns formed on the conductive substrates by the above etching process intersect with each other, a conductive substrate provided with a mesh-like wiring is obtained. be able to. The surface to be bonded when bonding the two conductive substrates is not particularly limited. For example, in the case of the configuration shown in FIG. 4B, the surface A in FIG. 1A on which the metal layer 12 and the like of one conductive substrate are stacked and the metal layer 12 and the like of the other conductive substrate are stacked. The surface 11b in FIG. 1 (a) which is not shown can be bonded.

  Further, in the case where two conductive substrates are bonded to form the configuration shown in FIG. 4A, for example, with respect to the two conductive substrates, the metal layer 12 or the like of the transparent substrate 11 is not laminated. The surfaces 11 b in (a) can be bonded to each other.

  In the case where the conductive substrate shown in FIG. 4 (a) or FIG. 4 (b) has an adhesive layer between the transparent base 11 and the wirings 31A and 31B, it is shown in FIG. 1 (a). Instead of the above conductive substrate, the conductive substrate shown in FIG. 2A can be used.

  The width of the wires and the distance between the wires in the conductive substrate having the mesh-like wires shown in FIGS. 3 and 4 are not particularly limited, and may be selected according to, for example, the amount of current flowing through the wires. can do.

  Moreover, although the example which formed mesh-like wiring (wiring pattern) combining the wiring of linear shape in FIG. 3, FIG. 4 is shown, it is not limited to the form which concerns, A wiring pattern is comprised The wiring can be of any shape. For example, the shapes of the wires forming the mesh-like wiring pattern may be various shapes such as lines (zigzag straight lines) bent in a jagged manner so as not to generate moire (interference fringes) with the image of the display.

  Thus, the conductive substrate having mesh-like wiring composed of two layers of wiring can be preferably used, for example, as a conductive substrate for a projected capacitive touch panel.

  Next, one configuration example of the method of manufacturing the conductive substrate of the present embodiment will be specifically described.

  As described above, in the method of manufacturing a conductive substrate according to the present embodiment, a metal layer forming step of forming a metal layer on at least one surface of a transparent substrate, and black forming a blackening layer on the metal layer And the step of forming a chemical layer. Each process is described below.

  The transparent substrate to be subjected to the metal layer forming step can be prepared in advance. The kind of transparent substrate to be used is not particularly limited, but as described above, a transparent substrate such as a resin substrate (resin film) that transmits visible light, a glass substrate, etc. can be preferably used. The transparent substrate can be cut into any size in advance, if necessary.

  The metal layer preferably has a metal thin film layer as described above. The metal layer can also have a metal thin film layer and a metal plating layer. Therefore, the metal layer forming step can include the step of forming the metal thin film layer by, for example, a dry plating method. In the metal layer forming step, a metal thin film layer is formed by a dry plating method, and a metal plating layer is formed by an electroplating method which is a kind of a wet plating method, using the metal thin film layer as a feeding layer. May be included.

  It does not specifically limit as a dry plating method used at the step which forms a metal thin film layer, For example, a vapor deposition method, sputtering method, or ion plating method etc. can be used. In addition, a vacuum evaporation method can be preferably used as an evaporation method. As the dry plating method used in the step of forming the metal thin film layer, it is more preferable to use the sputtering method because the control of the film thickness is particularly easy.

  Next, the step of forming a metal plating layer will be described. The conditions in the step of forming the metal plating layer by the wet plating method, that is, the conditions of the electroplating treatment are not particularly limited, and various conditions according to the ordinary method may be adopted. For example, a metal plating layer can be formed by supplying a base having a metal thin film layer formed in a plating tank containing a metal plating solution and controlling the current density and the conveyance speed of the base.

  The material that can be suitably used for the metal layer, the preferable thickness of the metal layer, and the like have already been described, and thus the description thereof is omitted here.

  Next, the blackening layer forming step will be described.

  The blackening layer forming step can have the following steps.

A blackening layer forming step of forming a blackening layer containing nickel, copper and oxygen.
A surface treatment step of bringing the surface of the blackening layer into contact with an acid-containing aqueous solution.

  First, the blackening layer forming step will be described.

  In the blackening layer forming step, as described above, the blackening layer containing Ni, Cu, and O can be formed.

  Although the film forming method of the blackened layer in the blackened layer forming step is not particularly limited, it is preferable that the blackened layer is formed by a dry method.

  When forming a blackening layer into a film by a dry method, the specific method is not specifically limited, For example, dry-plating methods, such as a sputtering method, an ion plating method, a vapor deposition method, can be used preferably. When forming a blackening layer into a film by a dry process, since control of a film thickness is easy, it is more preferable to use sputtering method.

  In addition, since the blackening layer can contain oxygen as described above, it is particularly preferable to form a film by reactive sputtering.

  In the case of forming a blackened layer by reactive sputtering, a target containing Ni and Cu constituting the blackened layer can be used as a target. For example, a target of a Ni-Cu alloy can be preferably used. The composition of the target is not particularly limited. For example, when using a target of a Ni-Cu alloy, the content of Ni is preferably 30% by mass to 80% by mass, and 50% by mass to 80% by mass It is more preferable that

  Then, by adding oxygen to the inert gas when forming the blackening layer, it is possible to form a blackening layer containing Ni, Cu and O. The inert gas is also not particularly limited, but, for example, argon can be preferably used.

  About the suitable thickness of a blackening layer, etc., since it is stated above, explanation is omitted here.

  Next, the surface treatment step will be described.

  In the surface treatment step, the surface of the blackened layer formed in the blackened layer forming step can be brought into contact with the acid-containing aqueous solution.

  Thus, by treating the surface of the formed blackened layer with an aqueous solution containing an acid, the reflectance of the blackened layer is suppressed low and the reactivity of the blackened layer to the etching solution, that is, the etching property is enhanced. Becomes possible. For this reason, it is possible to provide a blackened layer in which low reflectance and etching properties are compatible.

  It is not clear why the surface treatment with an acid-containing aqueous solution results in a blackened layer in which low reflectance and etching properties are compatible, but nickel and / or copper contained in the blackened layer is selectively used for the acid-containing aqueous solution. It is thought that it melts and roughens the surface of the blackened layer to micro.

  Specifically, since the light is easily irregularly reflected on the surface of the blackened layer by roughening the surface of the blackened layer to a micro size, it is considered that the reflectance can be reduced. In addition, it is considered that the surface area of the blackened layer can be increased and the reactivity with the etching solution can be enhanced by roughening the surface of the blackened layer to micro. For this reason, as described above, it is possible to provide a blackened layer in which low reflectance and etchability are compatible.

  The composition of the acid-containing aqueous solution is not particularly limited, but preferably contains hydrochloric acid and / or sulfuric acid, and is more preferably composed of hydrochloric acid and / or sulfuric acid and water.

  As the acid-containing aqueous solution, for example, a hydrochloric acid-containing aqueous solution containing hydrochloric acid can be preferably used. The concentration of hydrochloric acid in the hydrochloric acid-containing aqueous solution is preferably 1.0% by mass or more and 10.0% by mass or less, and more preferably 1.5% by mass or more and 8.0% by mass or less.

  This is because the reflectance of the blackened layer can be suppressed to a particularly low level by setting the hydrochloric acid concentration of the aqueous solution containing hydrochloric acid to 1.0 mass% or more. However, if the concentration of hydrochloric acid in the aqueous solution containing hydrochloric acid exceeds 10.0% by mass, the color of the surface of the blackened layer may change from black to reddish brown etc., so it is 10.0% by mass or less as described above Is preferred.

  Moreover, as an acid containing aqueous solution, the sulfuric acid containing aqueous solution containing a sulfuric acid can also be used preferably. The concentration of sulfuric acid in the sulfuric acid-containing aqueous solution is preferably 15.0% by mass or less, and more preferably 12.0% by mass or less.

  This is the reflectance of the blackened layer while suppressing the color of the surface of the blackened layer from changing from black to another color by setting the sulfuric acid concentration of the aqueous solution containing sulfuric acid to 15.0% by mass or less Can be suppressed low, and the etching property can be enhanced.

  The lower limit value of the concentration of sulfuric acid is not particularly limited, but is preferably, for example, 1.0% by mass or more, and more preferably 5.0% by mass or more.

  An aqueous solution containing hydrochloric acid and sulfuric acid can also be used as the acid-containing aqueous solution. In this case, the concentration of hydrochloric acid is preferably 1.0% by mass or more and 10.0% by mass or less, and the concentration of sulfuric acid is preferably 15.0% by mass or less.

  In the acid-containing aqueous solution containing hydrochloric acid and sulfuric acid, the concentration of hydrochloric acid is more preferably 1.5% by mass or more and 8.0% by mass or less, and the concentration of sulfuric acid is 12.0% by mass or less Is more preferred. The lower limit value of the concentration of sulfuric acid is not particularly limited, but is preferably, for example, 1.0% by mass or more, and more preferably 5.0% by mass or more.

  The method for bringing the surface of the blackening layer into contact with the acid-containing aqueous solution is not particularly limited.

  For example, the surface of the blackened layer can be brought into contact with the acid-containing aqueous solution by immersing the substrate having the blackened layer formed on at least one surface side of the transparent substrate in the acid-containing aqueous solution.

  Further, for example, the acid-containing aqueous solution can be brought into contact with the surface of the blackened layer by supplying and applying the acid-containing aqueous solution to the surface of the blackened layer. In this case, the means and method for supplying and applying the acid-containing aqueous solution are not particularly limited. For example, a spray or the like can be used.

  The time for bringing the surface of the blackening layer into contact with the acid-containing aqueous solution is not particularly limited, but the contact of the surface of the blackening layer with the acid-containing aqueous solution is sufficient for 5 seconds or more. It is preferable to keep them in contact for 10 seconds or more.

  The upper limit of the time for which the surface of the blackening layer is in contact with the acid-containing aqueous solution is not particularly limited, but is preferably 60 seconds or less and 45 seconds or less from the viewpoint of productivity, for example. More preferable.

  The time for which the surface of the blackening layer is in contact with the acid-containing aqueous solution is, for example, when the substrate on which the blackening layer is formed is immersed in the acid-containing aqueous solution, after immersing the substrate in the acid-containing aqueous solution, The time until the base material is taken out and the acid-containing aqueous solution is removed by washing with water etc. For example, in the case of supplying and applying an acid-containing aqueous solution to the surface of the blackened layer, the acid-containing aqueous solution is supplied and applied to the surface of the blackened layer and then the acid-containing aqueous solution is removed by washing with water. Time for

  After the surface treatment step is completed, in order to remove the acid-containing aqueous solution supplied to the surface of the blackened layer, for example, a group having the blackened layer formed on at least one surface of the transparent substrate which has been subjected to the surface treatment step. The material can be washed with water and dried, followed by washing and drying steps.

  In the washing with water and drying steps, for example, the base having the blackened layer formed on at least one side of the transparent base, which has been subjected to the surface treatment step, can be washed with water. Although the method of washing with water is not particularly limited, for example, the substrate can be supplied into a water tank containing water, and can be washed by transporting the inside of the water tank. In addition, water can be supplied to the base material by spraying or the like to wash the base material.

  And although it does not specifically limit about the method to dry after water washing, for example, it can dry with a dryer etc. In addition, draining etc. which remove the water | moisture content which adhered to the base material can also be implemented between water washing and drying.

  So far, the metal layer forming step and the blackening layer forming step have been described. However, in the method of manufacturing a conductive substrate of the present embodiment, an optional step can be performed in addition to the above-described steps.

  For example, when forming an adhesion layer between a transparent base material and a metal layer, an adhesion layer formation process which forms an adhesion layer on the field which forms a metal layer of a transparent base material can be carried out. When the adhesion layer formation step is carried out, the metal layer formation step can be carried out after the adhesion layer formation step, and in the metal layer formation step, metal is formed on the base on which the adhesion layer is formed on the transparent substrate in this step. A thin film layer can be formed.

  In the adhesion layer forming step, the film formation method of the adhesion layer is not particularly limited, but it is preferable to form a film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method and the like can be preferably used. In the case where the adhesion layer is formed by a dry method, it is more preferable to use a sputtering method because control of the film thickness is easy. As described above, one or more elements selected from carbon, oxygen, hydrogen and nitrogen can be added to the adhesion layer, and in this case, reactive sputtering can be more preferably used.

  The material that can be suitably used for the adhesion layer, the preferable thickness of the adhesion layer, and the like have already been described, and thus the description thereof is omitted here.

  The conductive substrate obtained by the method for producing a conductive substrate of the present embodiment can be used, for example, in various applications such as a touch panel. And when using for various uses, it is preferable that the metal layer contained in the conductive substrate of this embodiment, and a blackening layer are patterned. When the adhesion layer is provided, it is preferable that the adhesion layer is also patterned. The metal layer, the blackening layer and possibly also the adhesion layer can be patterned, for example, in accordance with the desired wiring pattern, and the metal layer, the blackening layer and possibly also the adhesion layer are patterned in the same shape Is preferred.

  Therefore, the method of manufacturing the conductive substrate of the present embodiment can further include a wiring processing step of etching the metal layer and the blackening layer in accordance with the wiring pattern. When the adhesion layer is formed, the adhesion layer, the metal layer, and the blackening layer can be etched according to the wiring pattern in the wiring process.

  The specific procedure of the wiring process is not particularly limited, and can be implemented by any procedure. For example, in the case of the conductive substrate 10A in which the metal layer 12 and the blackening layer 13 are laminated on the transparent substrate 11 as shown in FIG. 1A, first, a mask having a desired pattern on the surface A on the blackening layer 13 Mask placement step can be performed. Although the method of forming the mask having the desired pattern is not particularly limited, it can be formed by the same method as the conventional technique, such as photolithography, according to the wiring pattern and the like.

  Then, an etching step may be performed in which the etchant is supplied to the surface A of the blackening layer 13, ie, the surface on which the mask is disposed.

  Although the etching solution used in the etching step is not particularly limited, the conductive substrate of the present embodiment exhibits the same reactivity to the etching solution as the copper layer because it has a blackened layer excellent in etching property. . Therefore, the etching solution used in the wiring processing step is not particularly limited, and an etching solution generally used for etching a copper layer can be preferably used.

  As an etching solution used in the etching step, for example, an aqueous solution containing one selected from sulfuric acid, hydrogen peroxide water, hydrochloric acid, cupric chloride, and ferric chloride, or two or more types selected from the above sulfuric acid and the like More preferably, a mixed aqueous solution containing The content of each component in the etching solution is not particularly limited.

  The etching solution can be used at room temperature, but can also be used by heating to enhance the reactivity, for example, it can be used by heating to 40 ° C. or more and 50 ° C. or less.

  Further, even in the case of the conductive substrate 10B in which the metal layers 12A and 12B and the blackening layers 13A and 13B are laminated on one surface 11a and the other surface 11b of the transparent base material 11 as shown in FIG. A wiring processing step of etching in accordance with a desired wiring pattern can be performed.

  In the case of the conductive substrate shown in FIG. 1B, for example, a mask disposing step of disposing a mask having a desired pattern on the surface A and the surface B on the blackened layers 13A and 13B can be performed. Then, an etching step may be performed in which the etchant is supplied to the surface A and the surface B on the blackened layers 13A and 13B, that is, the surface on which the mask is disposed.

  The pattern to be formed in the etching step is not particularly limited, and can have any shape according to the desired wiring pattern. For example, as described above, the conductive substrate can also be provided with a mesh-like wiring by two layers of wiring.

  In addition, after the metal layer 12 and the blackening layer 13 of the conductive substrate 10A shown in FIG. 1A, for example, are etched in the wiring processing step, the laminating step of laminating the obtained two or more conductive substrates is performed. You can also When laminating, for example, by laminating so that the wiring patterns of the respective conductive substrates intersect, it is also possible to obtain a laminated conductive substrate provided with mesh-like wiring.

  Although the method of fixing the laminated two or more conductive substrates is not particularly limited, for example, it can be fixed by an adhesive or the like.

  The conductive substrate obtained by the method for producing a conductive substrate of the present embodiment described above includes a blackened layer containing nickel, copper and oxygen which has been subjected to a surface treatment with an aqueous solution containing an acid. Therefore, it is possible to obtain a conductive substrate provided with a blackened layer in which low reflectance and etching property are compatible.

The present invention will be described by way of specific examples and comparative examples, but the present invention is not limited to these examples.
(1) Evaluation Method First, an evaluation method of the obtained conductive substrate will be described.
(Evaluation of the appearance of the blackened layer)
The appearance of the resulting blackened layer of the conductive substrate was evaluated by visual observation.

  When the color of the blackened layer was black, it was evaluated as ◎, and when it was not black, it was evaluated as x.

(Average reflectance of light with a wavelength of 400 nm to 700 nm)
The measurement was performed by installing a reflectance measurement unit in an ultraviolet-visible spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2600).

With respect to the surface A of the blackened layer 13 of the conductive substrate having the structure shown in FIG. 1A manufactured in each of the following experimental examples, the incident angle 5 ° and the light reception angle 5 ° The light of each wavelength was changed at an interval of 1 nm from a wavelength of 400 nm, and the specular reflectance at each wavelength was measured. And the average value of the reflectance in all the measured wavelengths was made into the average reflectance (regular reflectance) of the light of wavelength 400nm-700nm of this conductive substrate.
(Etching test)
In the etching test, an etchant containing 10% by weight of ferric chloride, 1% by weight of hydrochloric acid, and the balance of water was used.

  The conductive substrate produced in each experimental example was immersed in an etching solution at a temperature of 25 ° C. for 60 seconds without forming a resist or the like, and then removed from the etching solution. After that, the etching solution adhering to the conductive substrate was sufficiently washed away by water washing.

  The conductive substrate after immersion in an etching solution and washing with water was visually observed, and the presence or absence of the metal layer and the blackened layer remaining on the transparent substrate was observed.

  In the case where the metal layer and the blackening layer do not remain, that is, when the residue can not be confirmed, it is indicated that the blackening layer is a conductive layer provided with a metal layer excellent in etching properties and capable of etching simultaneously and a blackening layer. ing.

On the other hand, when at least one of the metal layer and the blackening layer remains, that is, when the residue can be confirmed, the etchability of the blackening layer is low, and the deposited metal layer and the blackening layer are formed. Indicates that it is impossible to etch at the same time.
(2) Preparation conditions of a sample, evaluation result The conductive substrate of each experimental example was produced on the conditions explained below, and evaluation was performed by the above-mentioned evaluation method.
[Experimental Example 1]
As shown below, samples of Experimental Example 1-1 to Experimental Example 1-7 were prepared and evaluated.
(Experimental example 1-1)
(Metal layer formation process)
First, a transparent substrate made of polyethylene terephthalate resin (PET) having a length of 100 m, a width of 500 mm, and a thickness of 50 μm was prepared. In addition, it was 97% when the total light transmittance was evaluated by the method prescribed | regulated to JISK7361-1 about the transparent substrate made from the polyethylene terephthalate resin used as a transparent substrate.

  Then, using a sputtering apparatus equipped with a copper target, a copper layer (copper thin film layer) was formed as a metal layer on one main plane of the transparent substrate.

The metal layer was first evacuated to 1 × 10 ⁻⁴ Pa in a chamber in which the above-mentioned transparent substrate was set, and then argon gas was introduced to adjust the pressure in the chamber to 1.3 Pa. Then, power was supplied to the copper target to form a copper layer having a thickness of 0.5 μm on the transparent substrate.
(Blackening layer formation process)
First, the blackened layer forming step of forming a blackened layer containing nickel, copper, and oxygen was performed according to the following procedure.

  The sputtering apparatus was equipped with a nickel-copper alloy target containing 65% by mass of nickel and 35% by mass of copper.

  Then, in the chamber of the sputtering apparatus, the base on which the metal layer was formed on the transparent base in the above-described metal layer forming step was placed such that the target and the metal layer were opposed to each other.

Subsequently, after exhausting the inside of a chamber to 1 * 10 <^-4> Pa, argon gas and oxygen gas were introduce | transduced and it adjusted so that the pressure in a chamber might be 2.0 Pa. At this time, argon gas and oxygen gas were supplied such that the ratio of oxygen gas in the mixed gas of argon gas and oxygen gas in the chamber was 10% by volume.

  Then, power was supplied to the nickel-copper alloy target to form a blackened layer having a thickness of 50 nm on the metal layer.

  A surface treatment step was then performed.

  In the surface treatment step, the substrate was immersed for 15 seconds at room temperature in an acid-containing aqueous solution consisting of hydrochloric acid and water and having a hydrochloric acid concentration of 1.5% by mass.

  After completion of the surface treatment step, the obtained conductive substrate was washed with water and dried.

  In the water washing and drying steps, the surface of the conductive substrate is sprayed with water by spraying to wash the water, and in the water washing step, the water adhering to the conductive substrate is drained off, and then dried by a dryer. Did.

  About the obtained conductive substrate, evaluation of the external appearance of the above-mentioned blackening layer and measurement of the average reflectance of light with a wavelength of 400 nm or more and 700 nm or less were performed. The results are shown in Table 1.

Moreover, when the etching test was implemented, it has confirmed that there was no residue.
(Experimental Example 1-2 to Experimental Example 1-7)
In Experimental Examples 1-2 to 1-6, in the surface treatment step, an acid-containing aqueous solution consisting of hydrochloric acid and water and having a hydrochloric acid concentration shown in Table 1 was used in each experimental example. In the same manner as in Experiment Example 1-1, a conductive substrate was produced and evaluated. The evaluation results are shown in Table 1.

  In Experimental Example 1-7, a conductive substrate was produced in the same manner as in Experimental Example 1-1 except that the surface treatment step was not performed. About the obtained conductive substrate, evaluation of the external appearance of the above-mentioned blackening layer and measurement of the average reflectance of light with a wavelength of 400 nm or more and 700 nm or less were performed. The evaluation results are shown in Table 1.

  Moreover, when the etching test was implemented, it was able to confirm that there is no residue in any experiment example.

表１に示した結果によると、実施例である実験例１−１〜実験例１−６については、いずれも反射率（平均反射率）が１０％以下となっており、低反射率と、エッチング性とを両立した黒化層を備えた導電性基板が得られていることを確認できた。

According to the results shown in Table 1, the reflectance (average reflectance) is 10% or less in all of the experimental examples 1-1 to 1-6 which are the examples, and the low reflectance and It could be confirmed that a conductive substrate provided with a blackened layer compatible with the etching property was obtained.

  On the other hand, in Experimental Example 1-7, the reflectance is as high as 10.2%, and it can be confirmed that a blackened layer having a sufficiently low reflectance (average reflectance) can not be obtained. The

In Experimental Example 1-6, as a result of evaluation of the appearance of the blackened layer, it could be confirmed to be defective. From the result, in the surface treatment step, when using a hydrochloric acid-containing aqueous solution as the acid-containing aqueous solution, it was confirmed that the concentration of hydrochloric acid is preferably 10% by mass or less.
[Experimental Example 2]
(Experimental Example 2-1 to Experimental Example 2-4)
In the surface treatment step, a conductive substrate was produced in the same manner as in Experimental Example 1-1 except that an acid-containing aqueous solution containing sulfuric acid shown in Table 1 was used in each experimental example. In Experimental Example 2-1, an acid-containing aqueous solution containing sulfuric acid and water is used, and in Experimental Examples 2-2 to 2-4, an acid-containing aqueous solution containing sulfuric acid, hydrochloric acid, and water is used. ing.

  About the obtained conductive substrate, evaluation of the external appearance of the above-mentioned blackening layer and measurement of the average reflectance of light with a wavelength of 400 nm or more and 700 nm or less were performed. The evaluation results are shown in Table 2.

  Moreover, when the etching test was implemented, it was able to confirm that there is no residue in any experiment example.

表２に示した結果によると、実施例である実験例２−１〜実験例２−４については、いずれも黒化層表面での反射率（平均反射率）が１０％以下となっており、低反射率と、エッチング性とを両立した黒化層を備えた導電性基板が得られていることを確認できた。

According to the results shown in Table 2, the reflectance (average reflectance) on the surface of the blackened layer is 10% or less in all of Examples 2-1 to 2-4 which are the examples. It could be confirmed that a conductive substrate provided with a blackened layer having both a low reflectance and an etching property was obtained.

10A, 10B, 20A, 20B, 30 Conductive substrate 11 Transparent base 12, 12A, 12B Metal layer 13, 13A, 13B blackened layer

Claims (4)

A metal layer forming step of forming a metal layer which is a copper layer on at least one surface of the transparent substrate;
And b. Forming a blackening layer on the metal layer.
In the blackening layer forming step,
A blackening layer forming step of forming a blackening layer containing nickel, copper and oxygen;
A method for producing a conductive substrate, comprising a surface treatment step of bringing a surface of the blackening layer into contact with an acid-containing aqueous solution. The acid-containing aqueous solution contains hydrochloric acid,
The method for producing a conductive substrate according to claim 1, wherein the concentration of the hydrochloric acid is 1.0% by mass or more and 10.0% by mass or less. The acid-containing aqueous solution contains sulfuric acid,
The method for producing a conductive substrate according to claim 1, wherein a concentration of the sulfuric acid is 15.0% by mass or less.   The method for manufacturing a conductive substrate according to any one of claims 1 to 3, further comprising a wiring processing step of etching the metal layer and the blackening layer in accordance with a wiring pattern.

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