JP6497391B2 - Conductive substrate for touch panel, manufacturing method of conductive substrate for touch panel - Google Patents

Description

  The present invention relates to a conductive substrate for a touch panel and a method for manufacturing a conductive substrate for a touch panel.

  The capacitive touch panel converts information on the position of an adjacent object on the panel surface into an electrical signal by detecting a change in electrostatic capacitance caused by the object adjacent to the panel surface. Since the conductive substrate for a touch panel used for a capacitive touch panel is installed on the surface of a display, the material of the conductive layer used for the conductive substrate for the touch panel is required to have low reflectance and be difficult to be visually recognized. .

  For this reason, as a material of the conductive layer used for the conductive substrate for touch panels, a material having low reflectivity and hardly visible is used, and is formed on a transparent substrate or a transparent film. For example, Patent Document 1 discloses a transparent conductive film for a touch panel in which an ITO (indium tin oxide) film is formed as a transparent conductive film on a polymer film.

  In recent years, display screens equipped with a touch panel have been increased in screen size. Correspondingly, a touch panel conductive substrate is required to have a larger area. However, since ITO has a high electric resistance value and causes signal deterioration, there is a problem that ITO is not suitable for a large panel.

  Then, in order to suppress the electrical resistance of an electroconductive board | substrate, using metal foil as an electroconductive layer is examined (for example, patent document 2, 3).

Japanese Unexamined Patent Publication No. 2003-151358 Japanese Unexamined Patent Publication No. 2011-018194 Japanese Unexamined Patent Publication No. 2013-0669261

  However, when a metal foil such as copper is used as the conductive layer included in the conductive substrate for the touch panel, the metal foil has a metallic luster, so that the visibility of the display is reduced due to reflection on the surface of the metal foil. There was a problem.

  In view of the above-described problems of the related art, an object of one aspect of the present invention is to provide a conductive substrate for a touch panel that includes a conductive layer using a metal and suppresses reflection of light by the conductive layer.

In order to solve the above problems, according to one aspect of the present invention,
An insulator substrate;
An underlying metal layer disposed on at least one surface of the insulator substrate and containing nickel;
A copper thin film layer disposed on the base metal layer;
A copper plating film disposed on the copper thin film layer and having one surface facing the copper thin film layer and another surface located on the opposite side of the one surface;
In the range of depth from the surface of the other surface of the copper plating film to 0.3 μm, the concentration of sulfur is 10 mass ppm or more and 150 mass ppm or less,
Provided is a conductive substrate for a touch panel, wherein the other surface of the copper plating film has a surface roughness (Ra) of 0.01 μm or more and 0.15 μm or less.

  According to one aspect of the present invention, it is possible to provide a conductive substrate for a touch panel that includes a conductive layer using a metal and suppresses reflection of light by the conductive layer.

Sectional drawing of the conductive substrate for touchscreens concerning embodiment of this invention. Sectional drawing of the conductive substrate for touchscreens concerning embodiment of this invention. The structure explanatory view of the conductive substrate for touch panels patterned according to the embodiment of the present invention. Sectional drawing in the AA 'surface of FIG. 2A. BRIEF DESCRIPTION OF THE DRAWINGS Structure explanatory drawing of the laminated conductive substrate for touchscreens provided with the mesh-shaped wiring which concerns on embodiment of this invention. Sectional drawing in the BB 'surface of FIG. 3A. Sectional drawing of the conductive substrate for touchscreens provided with the mesh-shaped wiring which concerns on embodiment of this invention. Explanatory drawing of the roll-to-roll sputtering apparatus which concerns on embodiment of this invention.

Hereinafter, one embodiment of a conductive substrate for a touch panel and a method for manufacturing a conductive substrate for a touch panel according to the present invention will be described.
(Conductive substrate for touch panel, laminated conductive substrate for touch panel)
The conductive substrate for touch panel of this embodiment can have an insulator base material, a base metal layer, a copper thin film layer, and a copper plating film.

  The base metal layer is disposed on at least one surface of the insulator base material and can contain nickel. The copper thin film layer can be disposed on the underlying metal layer. Moreover, a copper plating film can be arrange | positioned on a copper thin film layer, and can have one surface which opposes a copper thin film layer, and the other surface located in the other side of one surface.

  And in the depth range from the surface of the other surface of the copper plating film to 0.3 μm, the concentration of sulfur is 10 mass ppm or more and 150 mass ppm or less, and the surface roughness (Ra) of the other surface of the copper plating film is The thickness can be 0.01 μm or more and 0.15 μm or less.

  In addition, the conductive substrate for touch panels of this embodiment is a base metal layer, a copper thin film layer, and a copper plating film on the surface of an insulator base material before patterning a base metal layer, a copper thin film layer, and a copper plating film. It may be a substrate having Further, the conductive substrate for a touch panel of the present embodiment may be a substrate obtained by patterning a base metal layer, a copper thin film layer, and a copper plating film, that is, a wiring substrate. The conductive substrate for touch panel after patterning the base metal layer, the copper thin film layer, and the copper plating film is a region where the insulator base material is not covered by the base metal layer or the like, that is, a region where the insulator base material is exposed. Will be included.

  Each member included in the conductive substrate for a touch panel of the present embodiment will be described below.

  The insulator base material is not particularly limited, and any material such as a glass substrate and various resin substrates can be used. In particular, from the viewpoint of handleability and the like, the insulator base material is preferably a resin substrate. For this reason, as the insulator base material, for example, any resin selected from polyamide film, polyester film (polyethylene terephthalate film), polyethylene naphthalate film, cycloolefin film, polyimide film, and polycarbonate film A substrate can be suitably used, and the resin substrate is preferably a resin film.

  Moreover, since it is preferable that the visibility of a display is high when arrange | positioning on a display, it is preferable that an insulator base material has the high light transmittance. For this reason, it is preferable that the total light transmittance of an insulator base material is 30% or more, It is more preferable that it is 60% or more, It is further more preferable that it is 90% or more. In addition, the total light transmittance of the insulator base material here means the total light transmittance of the insulator base material alone. The total light transmittance of the insulating base material can be evaluated based on, for example, JIS K7361-1 (2011).

  The shape of the insulator base material is not particularly limited, but preferably has a plate shape, for example. In this case, the insulator base material can have one main plane and the other main plane opposite to the one main plane. The main plane means the widest plane portion of the insulator base material.

  The thickness of the insulator base material is not particularly limited, and can be arbitrarily selected according to the strength, capacitance, light transmittance, and the like required when a conductive substrate for a touch panel is used. The insulator base material is preferably a film, that is, an insulator film. For this reason, as a thickness of an insulator base material, it can be referred to as 10 micrometers or more and 200 micrometers or less, for example. In particular, the thickness of the insulator base material is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. In the case of use for touch panel applications, for example, particularly in applications where it is required to reduce the thickness of the entire display, the thickness of the transparent substrate is preferably 20 μm or more and 50 μm or less.

  Next, the base metal layer will be described.

  By forming the base metal layer between the insulator substrate and the copper layer including the copper thin film layer and the copper plating film, the adhesion between the insulator substrate and the copper layer can be increased, Or it can suppress more reliably that a copper layer peels from an insulator base material at the time of use.

  In addition, since the copper layer can have copper as a main component and has a metallic luster, in a conductive substrate in which the copper layer is arranged directly on the insulator base material, the light incident from the insulator base material side is the copper layer. May be reflected by the surface of the surface. For this reason, when the electroconductive board | substrate which has arrange | positioned the copper layer directly on the insulator base material is arrange | positioned on a display, there exists a possibility that the visibility of a display may fall. On the other hand, when the base metal layer is arranged between the insulator base material and the copper layer, reflection of light by the copper layer can be suppressed by the base metal layer, and even when arranged on the display, It can suppress that the visibility of a display falls.

  The base metal layer can be formed on at least one main plane of the insulator substrate. Moreover, it can also form on both main planes of one main plane of an insulator base material, and the other main plane as mentioned later.

  The material constituting the base metal layer is not particularly limited. The adhesion between the insulator base and the copper layer, the degree of suppression of light reflection on the surface of the copper layer, and the conductive substrate for touch panel It can be arbitrarily selected according to the degree of stability to the environment (for example, humidity and temperature) to be used.

  As a material constituting the base metal layer, a material containing Ni can be preferably used from the viewpoint of improving the adhesion between the insulator base material and the copper layer and suppressing the reflection of light on the surface of the copper layer. As a material containing Ni, for example, it is preferable to contain Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. In addition, the base metal layer can further include one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

  The base metal layer includes a metal alloy containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. You can also. Also in this case, the base metal layer can further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, a metal alloy containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, that is, a Ni alloy is, for example, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Cu-Ni-Fe alloy, Ni-Cu-Cr alloy can be preferably used.

  As described above, the base metal layer can be formed on at least one main plane of the insulator base material, but does not reduce the light transmittance of the conductive substrate for the touch panel. It is preferable not to arrange an adhesive between the two. That is, the base metal layer is preferably formed directly on the upper surface of the insulator base material without using an adhesive.

  The method for forming the underlying metal layer is not particularly limited, but is preferably formed by a dry plating method. As the dry plating method, for example, a sputtering method, a vapor deposition method, an ion plate method, or the like can be preferably used.

  When the base metal layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, 1 is selected from carbon, oxygen, hydrogen, and nitrogen in the atmosphere when forming the base metal layer. By adding a gas containing an element of at least a seed, it can be added to the base metal layer. For example, when adding carbon to the base metal layer, carbon monoxide gas and / or carbon dioxide gas is used. When oxygen is added, oxygen gas is used. When hydrogen is added, hydrogen gas and / or water is used. When nitrogen is added, nitrogen gas can be added to the atmosphere when dry plating is performed.

  A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas during dry plating. Although it does not specifically limit as an inert gas, For example, argon can be used preferably.

  By forming the base metal layer by a dry plating method, the adhesion between the insulator substrate and the base metal layer can be particularly improved. And since a base metal layer can contain a metal as a main component, for example, its adhesiveness with a copper layer is also high. For this reason, especially the peeling of the copper layer from an insulator base material can be suppressed by arrange | positioning the base metal layer formed into a film by the dry-plating method between the insulator base material and the copper layer.

  The thickness of the base metal layer is not particularly limited, but is preferably 3 nm to 50 nm, for example, more preferably 3 nm to 35 nm, and still more preferably 3 nm to 33 nm.

  The base metal layer has a function of suppressing light reflection in the copper layer, but when the base metal layer is thin, reflection of light by the copper layer may not be sufficiently suppressed. Therefore, in order to more reliably suppress reflection on the copper layer, it is preferable that the thickness of the base metal layer be 3 nm or more as described above.

  The upper limit of the thickness of the underlying metal layer is not particularly limited, but even if it is thicker than necessary, the time required for film formation and the time required for etching when forming the wiring are increased, resulting in an increase in cost. Will be invited. Therefore, the thickness of the base metal layer is preferably 50 nm or less as described above, more preferably 35 nm or less, and even more preferably 33 nm or less.

  Next, the copper thin film layer will be described.

  Although the copper thin film layer can be formed on the base metal layer, it is preferable not to place an adhesive between the base metal layer and the copper thin film layer in order not to reduce the light transmittance of the conductive substrate for the touch panel. . That is, the copper thin film layer is preferably formed directly on the upper surface of the base metal layer without using an adhesive.

  The method for forming the copper thin film layer is not particularly limited, but it is preferable to form the film by, for example, a dry plating method. As the dry plating method, for example, a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used. When the copper thin film layer is formed by a dry plating method, it can be formed directly on the base metal layer without using an adhesive.

  The thickness of the copper thin film layer is not particularly limited, but it also functions as a power feeding layer when forming the copper plating film, and is preferably 10 nm or more, and more preferably 50 nm or more. Although the upper limit of the thickness of the copper thin film layer is not particularly limited, the copper thin film layer is formed by, for example, a dry plating method as described above, and is preferably 300 nm or less from the viewpoint of productivity, and is 200 nm or less. More preferably.

  Next, the copper plating film will be described.

  The copper plating film can be formed on the copper thin film layer. The copper plating film is preferably formed directly on the upper surface of the copper thin film layer without using an adhesive.

  The method for forming the copper plating film is not particularly limited, but it is preferable to form the film by, for example, a wet plating method. As the wet plating method, an electroplating method is preferably used. As described above, the copper plating film can have one surface facing the copper thin film layer and another surface located on the opposite side of the one surface.

  And the density | concentration of sulfur can be 10 mass ppm or more and 150 mass ppm or less in the depth range from the surface of the other surface of a copper plating film to 0.3 micrometer. Moreover, the surface roughness (Ra) of the other surface of the copper plating film can be 0.01 μm or more and 0.15 μm or less.

  The other surface of the copper plating film can be located on the outer surface side of the conductive substrate for a touch panel of the present embodiment, for example, as shown in FIG. And since the main component of a copper plating film is copper, when it is set as the electroconductive board | substrate for touchscreens, there exists a possibility that light may be specularly reflected (regular reflection) on the other surface of a copper plating film, and visibility may be affected. Therefore, in the conductive substrate for a touch panel of the present embodiment, the light on the other surface of the copper plating film is diffusely reflected (diffuse reflection) by setting the surface roughness of the other surface of the copper plating film to 0.01 μm or more. The influence on the visibility can be suppressed by removing the gloss of the other surface of the copper plating film. In particular, from the viewpoint of sufficiently increasing the ratio of diffuse reflection on the other surface of the copper plating film, the surface roughness of the other surface of the copper plating film is more preferably 0.05 μm or more.

  The upper limit of the surface roughness of the other surface of the copper plating film is not particularly limited, but if it becomes too large, for example, when the copper plating film or the like is etched, the adhesion between the mask and the copper plating film May become difficult to pattern into a desired shape. For this reason, the surface roughness of the other surface of the copper plating film is preferably 0.15 μm or less, and more preferably 0.1 μm or less.

  The surface roughness (Ra) here is defined in JIS B 0601, and can be evaluated by, for example, a stylus method or an optical method.

  As a method of setting the surface roughness of the other surface of the copper plating film in the above range, a method of etching the other surface of the copper plating film may be mentioned. And before the etching treatment, when the concentration of sulfur in the depth range from the other surface of the copper plating film to 0.3 μm is 10 mass ppm or more, by etching the other surface of the copper plating film, The surface roughness (Ra) of the other surface of the copper plating film can be in the above range. However, if the concentration of sulfur in the depth range of up to 0.3μm on the other surface of the copper plating film exceeds 150 mass ppm, the copper plating film may become brittle, and the copper plating film may collapse, This is not preferable because it may be peeled off from the conductive substrate. For this reason, as above-mentioned, it is preferable that the density | concentration of sulfur in the range of the depth to 0.3 micrometer from the other surface of a copper plating film is 10 mass ppm or more and 150 mass ppm or less. In particular, the concentration of sulfur in the depth range from the other surface of the copper plating film to 0.3 μm is more preferably 50 mass ppm or more and 100 mass ppm or less.

  In addition, by etching the other surface of the copper plating film, a part of the other surface of the copper plating film is removed by etching to form a recess, and fine irregularities are formed on the other surface of the copper plating film. It is thought that it is done. For this reason, the sulfur concentration in the depth range of 0.3 μm from the highest portion of the surface of the other surface of the copper plating film, that is, the portion remaining as a convex portion even after the etching treatment is within the above range. Is preferably satisfied.

  Moreover, the sulfur concentration about the part beyond 0.3 micrometer from the other surface of a copper plating film is not specifically limited, For example, a sulfur concentration may be the said range over the whole copper plating film.

  The conditions for the electroplating treatment when forming the copper plating film are not particularly limited, and various conditions according to ordinary methods may be employed. The copper plating film containing sulfur can be formed using, for example, a copper plating solution containing sulfur. As the copper plating solution containing sulfur, for example, a copper plating solution added with an organic compound containing a sulfur atom is used. Can be used.

  For example, by controlling the content (addition amount) of organic compounds containing sulfur atoms in the copper plating solution, which is a plating solution, the current density, and the conveyance speed, the depth can be reduced to 0.3 μm from other surfaces. A copper plating film having the sulfur concentration can be formed. The conveyance speed here means the speed at which an object to be plated (base material) in which the base metal layer and the copper thin film layer are formed on the surface of the insulator base material is supplied to and conveyed to the plating tank.

  The content of the organic compound containing a sulfur atom in the copper plating solution used when forming the copper plating film is not particularly limited, but is preferably, for example, 2 mass ppm or more and 25 mass ppm or less, More preferably, it is 5 mass ppm or more and 15 mass ppm or less. This is because the content of the organic compound containing sulfur atoms in the copper plating solution is 2 mass ppm or more and 25 mass ppm or less, so that the sulfur concentration in the range from the other surface of the copper plating film to a depth of 0.3 μm. It is because it becomes especially easy to make the above range.

  Although what can be used as an organic compound containing a sulfur atom is not specifically limited, For example, 3- (benzothiazolyl-2-thio) propylsulfonic acid and its sodium salt, 3-mercaptopropane-1-sulfonic acid and Its sodium salt, ethylenedithiodipropylsulfonic acid and its sodium salt, bis (p-sulfophenyl) disulfide and its disodium salt, bis (4-sulfobutyl) disulfide and its disodium salt, bis (3-sulfo-2- Hydroxypropyl) disulfide and its disodium salt, bis (3-sulfopropyl) disulfide and its disodium salt, bis (2-sulfopropyl) disulfide and its disodium salt, methyl- (w-sulfopropyl) sulfide and its Disodium salt, methyl (w-sulfopropyl) -trisulfide and its disodium salt, thioglycolic acid, thiophosphoric acid-ortho-ethyl-bis (w-sulfopropyl) -ester and its disodium salt, thiophosphoric acid-tris (w-sulfo Propyl) -ester and its disodium salt, thiophosphoric acid-tris (w-sulfopropyl) -ester and its trisodium salt, and the like can be used.

  As described above, after forming the copper plating film, the other surface of the copper plating film can be etched within the above range by etching the other surface of the copper plating film. Although the method of etching the other surface of the copper plating film is not particularly limited, for example, it can be performed by using an etching solution. The etching solution to be used is not particularly limited, and a soft etching solution for copper can be preferably used.

  The film thickness of the copper layer composed of the copper thin film layer and the copper plating film formed on the base metal layer is not particularly limited, and the electrical resistance value required for the conductive substrate for touch panel and patterning are not limited. It can be arbitrarily selected according to the wiring width after the process. However, the film thickness of the copper layer composed of the copper thin film layer and the copper plating film is preferably 0.5 μm or more and 4.1 μm or less. Further, the thickness of the copper layer is more preferably 0.5 μm or more and 3 μm or less.

  This is because the electrical resistance value of the conductive substrate for touch panel can be made sufficiently low by setting the film thickness of the copper layer to 0.5 μm or more, and when the copper layer is patterned, the wiring pattern is a desired wiring. This is because it is possible to suppress narrowing than the width or disconnection. And by making the film thickness of a copper layer into 4.1 micrometers or less, the area of a copper layer side part becomes small and reflection of the light by a copper layer side part can be suppressed. Furthermore, side etching can be suppressed when the copper layer is etched to form a wiring pattern.

  Moreover, in the conductive substrate for touch panels of this embodiment, arbitrary layers can also be provided. For example, a blackening layer can be further provided on the copper plating film.

  By making the surface roughness of the other surface of the copper plating film within the above range, specular reflection on the surface of the copper plating film is suppressed, and the gloss on the other surface of the copper plating film is erased to suppress the effect on visibility. However, the influence which it has on the visibility of a copper plating film can be further suppressed by providing a blackening layer.

  From the viewpoint of suppressing the reflection of light on the surface of the copper plating film, the blackened layer preferably contains nickel. That is, as the material constituting the blackened layer, a material containing Ni (nickel) can be preferably used. As a material containing Ni, for example, it is preferable to include Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. . Further, the blackening layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

  The material constituting the blackening layer includes Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Metal alloys can also be included. Also in this case, the blackening layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, a metal alloy containing Ni and at least one metal selected from Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, that is, a Ni alloy is, for example, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Cu-Ni-Fe alloy, Ni-Cu-Cr alloy can be preferably used.

  The base metal layer and the blackening layer may be the same material or different materials. However, since the underlying metal layer, the copper layer, and the blackened layer can be patterned by etching as described later, the reactivity to the etching solution is the same for the underlying metal layer, the copper layer, and the blackened layer. It is preferable that the same is more preferable. For this reason, it is particularly preferable that the base metal layer and the blackening layer are made of the same material.

  The method for forming the blackening layer is not particularly limited, and it may be formed by a dry plating method similarly to the base metal layer, or may be formed by a wet plating method.

  The thickness of the blackening layer is not particularly limited, and can be arbitrarily selected according to the degree of reflectance (regular reflectance) required for the conductive substrate for touch panel.

  Next, the structural example of the conductive substrate for touch panels of this embodiment is demonstrated.

  As described above, the conductive substrate of the present embodiment includes an insulator base material, a base metal layer, a copper thin film layer, and a copper plating film, and the base metal layer and the copper thin film layer are provided on the insulator base material. The copper plating film may be laminated in that order.

  A specific configuration example will be described below with reference to FIGS. 1A and 1B. 1A and 1B show examples of cross-sectional views of the conductive substrate of the present embodiment on a plane parallel to the stacking direction of the insulator base material, the base metal layer, the copper thin film layer, and the copper plating film.

  For example, as in the conductive substrate 10A for a touch panel shown in FIG. 1A, the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are further provided on the first main plane 11a side of the insulator base material 11. It can be set as the structure laminated | stacked in that order one by one. In FIG. 1A, the copper plating film 14 has one surface 14a facing the copper thin film layer 13, and another surface 14b located on the opposite side of the one surface 14a.

  In addition, as in the conductive substrate 10B for a touch panel shown in FIG. 1B, the base metal layers 121 and 122 are respectively formed on the first main plane 11a side and the second main plane 11b side of the insulating base material 11. The copper thin film layers 131 and 132 and the copper plating films 141 and 142 can be stacked one by one in that order. In FIG. 1B, the copper plating film 141 (142) is one surface 141a (142a) facing the copper thin film layer 131 (132) and the other surface located on the opposite side of the one surface 141a (142a). 141b (142b).

  In addition, in the conductive substrate for touch panels shown to FIG. 1A and FIG. 1B, as above-mentioned, the blackening layer which is not illustrated can also be provided. When providing a blackening layer, in the conductive substrate for touch panels of FIG. 1A, it can arrange | position on the other surface 14b of the copper plating film 14, for example. In the conductive substrate for a touch panel in FIG. 1B, for example, a blackened layer can be disposed on the other surface 141 b of the copper plating film 141 and / or on the other surface 142 b of the copper plating film 142.

  In the conductive substrate for a touch panel according to the present embodiment, the base metal layer 12 (121, 122) is disposed between the insulator base 11 and the copper thin film layer 13 (131, 132), whereby an insulator base is provided. Reflection of light incident from the material 11 side toward the copper thin film layer 13 (131, 132) can be suppressed. In this case, the regular reflectance of the base metal layer 12 (121, 122) through the insulator base material 11 is not particularly limited. For example, the average regular reflectance in a wavelength range of 400 nm to 700 nm is 30. % Or less, and more preferably 25% or less.

  When the average specular reflectance of light having a wavelength of 400 nm or more and 700 nm or less through the insulator base 11 of the base metal layer 12 (121, 122) is 30% or less, for example, when used as a conductive substrate for a touch panel, Reflection of light from the display and light from the display can be sufficiently suppressed. For this reason, it is preferable because the visibility of the display is hardly lowered.

  The reflectance can be measured by irradiating the base metal layer 12 (121, 122) with light from the insulator base material 11 side.

  Specifically, for example, when the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are laminated in this order on the first main plane 11 a side of the insulator base 11 as shown in FIG. Can be measured by irradiating light from the second main plane 11b side of the insulator base material 11 so as to irradiate.

  In the measurement, light having a wavelength of 400 nm or more and 700 nm or less is changed, for example, at an interval of 1 nm wavelength and irradiated to the base metal layer 12 (121, 122) through the insulating substrate 11, and an average value of the measured values is calculated. The average regular reflectance of light in the wavelength range of 400 nm or more and 700 nm or less through the insulator base 11 of the base metal layer 12 (121, 122) can be obtained.

  Moreover, in the conductive substrate for touch panels of this embodiment, the regular reflectance in the surface of the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142) is not particularly limited, and the conductive film for touch panel is not limited. It can be arbitrarily selected according to the performance required for the conductive substrate. However, the average regular reflectance of the other surface 14b (141b, 142b) surface of the copper plating film 14 (141, 142) in the wavelength range of 400 nm to 700 nm is preferably 30% or less, for example, 20% The following is more preferable.

  This is because, for example, when the average regular reflectance of light having a wavelength of 400 nm to 700 nm on the surface 14b (141b, 142b) of the other surface 14b (141, 142) of the copper plating film 14 (141, 142) is 30% or less, for example, a conductive substrate for a touch panel This is because the reflection of light from the outside and light from the display can be sufficiently suppressed when used as a light source. For this reason, it is preferable because the visibility of the display is hardly lowered.

  The reflectance can be measured by irradiating the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142) with light.

  Specifically, for example, when the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are laminated in this order on the first main plane 11 a side of the insulator base 11 as shown in FIG. The surface 14b can be irradiated with light and measured.

  The measurement can be performed by irradiating the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142) while changing the light in the wavelength range of 400 nm or more and 700 nm or less, for example, at a wavelength of 1 nm. And let the average value of the value measured in this case be the average regular reflectance of the light of wavelength 400nm or more and 700nm or less in the other surface 14b (141b, 142b) surface of this copper plating film 14 (141, 142). it can.

  Further, as described above, in the conductive substrate for a touch panel of the present embodiment, a blackening layer can be formed on the other surface 14b (141b, 142b) of the copper plating film 14 (141, 142). . The regular reflectance on the surface of the blackened layer is not particularly limited. For example, the average regular reflectance in the wavelength range of 400 nm to 700 nm is preferably 30% or less, and preferably 20% or less. More preferred.

  When the regular reflectance of light with a wavelength of 400 nm or more and 700 nm or less of the blackened layer is 30% or less, for example, when used as a conductive substrate for a touch panel, reflection of light from the outside and light from the display is sufficiently suppressed. it can. For this reason, it is preferable because the visibility of the display is hardly lowered.

  The regular reflectance of the blackened layer can be measured by irradiating the blackened layer with light.

  Specifically, for example, in the conductive substrate 10A for a touch panel shown in FIG. 1A, when a blackening layer is formed on the other surface 14b of the copper plating film 14, the surface of the blackening layer facing the copper plating film 14; Can measure by irradiating the opposite surface with light.

  In the measurement, light with a wavelength of 400 nm to 700 nm is irradiated to the blackened layer, for example, by changing the wavelength at 1 nm intervals, and the average value of the measured values is the light in the wavelength range of 400 nm to 700 nm on the blackened layer surface. The average regular reflectance can be obtained.

  In the conductive substrate for a touch panel of this embodiment, the regular reflectance of light measured on the surface of the underlying metal layer or the blackened layer is preferably within the above range, and particularly the surface of the underlying metal layer and the blackened layer surface. It is more preferable that the regular reflectance of light satisfies the above range.

  And the conductive substrate for touchscreens of this embodiment can be used for a touchscreen, for example. When using for the use of a touchscreen, it is preferable that the base metal layer, the copper thin film layer, and the copper plating film which are contained in the conductive substrate for touchscreens of this embodiment are patterned. The base metal layer, the copper thin film layer, and the copper plating film can be patterned in accordance with, for example, a desired wiring pattern, and the base metal layer, the copper thin film layer, and the copper plating film are patterned in the same shape. It is preferable. In addition, when providing a blackening layer, it is preferable that the blackening layer is also patterned in the same shape as the base metal layer.

  Up to this point, the conductive substrate for a touch panel of the present embodiment has been described. However, a plurality of conductive substrates for a touch panel can be laminated to form a laminated conductive substrate for a touch panel. When laminating a conductive substrate for a touch panel, the base metal layer, the copper thin film layer, and the copper plating film included in the conductive substrate for a touch panel are preferably patterned as described above. In addition, when the blackening layer is provided, it is preferable that the blackening layer is also patterned.

  In particular, when used for touch panel applications, the touch panel conductive substrate or the touch panel laminated conductive substrate preferably includes mesh-like wiring.

  Here, as an example of forming a laminated conductive substrate with mesh-like wiring by laminating two conductive substrates for touch panel, a base metal layer formed on the conductive substrate for touch panel before lamination, copper A structural example of the shape of the thin film layer and the pattern of the copper plating film will be described with reference to FIGS. 2A and 2B.

  FIG. 2A shows the conductive substrate for touch panel 20 on the upper surface side, that is, the conductive substrate for touch panel of one of the two conductive substrates for touch panel constituting the laminated conductive substrate for touch panel having mesh-like wiring. It is the figure seen from the direction perpendicular | vertical to the main plane of the insulator base material 11. FIG. Moreover, FIG. 2B has shown sectional drawing in the AA 'line of FIG. 2A.

  Like the conductive substrate 20 for a touch panel shown in FIGS. 2A and 2B, the patterned base metal layer 22, the copper thin film layer 23, and the copper plating film 24 on the insulator base material 11 have the same shape. be able to. For example, the patterned copper plating film 24 has a plurality of linear patterns (copper plating film patterns 24A to 24G) shown in FIG. 2A, and the plurality of linear patterns are parallel to the Y axis in the figure. In addition, they can be arranged apart from each other in the X-axis direction in the drawing. At this time, as shown in FIG. 2A, when the insulator base 11 has a quadrangular shape, the copper plating film patterns (copper plating film patterns 24A to 24G) are, for example, one side of the insulator base 11 and It can arrange | position so that it may become parallel.

  As described above, when the patterned base metal layer 22 and the patterned copper thin film layer 23 are patterned in the same shape as the patterned copper plating film 24, the insulating base layer is between the patterns. The first main plane 11a of the material 11 is exposed.

  Further, when a blackened layer is disposed on the copper plating film 24, the blackened layer can also be patterned in the same shape as the base metal layer 22 and the like. The main plane 11a is exposed.

  The pattern forming method of the patterned base metal layer 22, the copper thin film layer 23, and the copper plating film 24 shown in FIGS. 2A and 2B is not particularly limited. For example, after the copper plating film 24 is formed, a pattern can be formed by arranging and etching a mask having a shape corresponding to the pattern formed on the copper plating film 24. The etching solution to be used is not particularly limited, and can be arbitrarily selected according to the materials constituting the base metal layer, the copper thin film layer, and the copper plating film. For example, the etching solution can be changed for each layer, and the base metal layer, the copper thin film layer, and the copper plating film can be simultaneously etched with the same etching solution. The same applies when a blackening layer is provided.

  And the laminated conductive substrate for touch panels can be formed by laminating | stacking the two conductive substrates for touch panels in which the above-mentioned base metal layer etc. were patterned. A laminated conductive substrate for a touch panel will be described with reference to FIGS. 3A and 3B. FIG. 3A shows a view of the laminated conductive substrate for touch panel 30 as viewed from the upper surface side, that is, the upper surface side along the lamination direction of the two conductive substrates for touch panel, and FIG. Sectional drawing in the -B 'line is shown.

  As shown in FIG. 3B, the touch panel laminated conductive substrate 30 can be obtained by laminating a touch panel conductive substrate 201 and a touch panel conductive substrate 202. The touch-panel conductive substrates 201 and 202 are both patterned base metal layer 221 (222) and copper thin film layer 231 on the first main plane 111a (112a) of the insulator base 111 (112). (232) and a copper plating film 241 (242) may be laminated. The patterned base metal layer 221 (222), the copper thin film layer 231 (232), and the copper plating film 241 (242) of the conductive substrates 201 and 202 for the touch panel are all the conductive substrate 20 for the touch panel described above. As in the case, it can be patterned to have a plurality of linear patterns.

  The laminated conductive substrate for a touch panel shown in FIG. 3B includes the first main plane 111a of the insulator base 111 of one conductive substrate 201 for touch panel and the insulator base of the conductive substrate 202 for the other touch panel. The material 112 is laminated so as to face the second main plane 112b.

  In addition, the conductive substrate 201 for one touch panel is turned upside down, and the second main plane 111b of the insulator base 111 of the conductive substrate 201 for one touch panel is insulated from the conductive substrate 202 for the other touch panel. You may laminate | stack so that the 2nd main plane 112b of the body base material 112 may oppose. In this case, the arrangement is the same as in FIG.

  When two conductive substrates for touch panel are laminated, as shown in FIGS. 3A and 3B, the patterned copper plating film 241 of one conductive substrate 201 for touch panel and the conductive substrate 202 for other touch panel are provided. The patterned copper plating film 242 can be laminated so as to intersect with each other. Specifically, for example, in FIG. 3A, the patterned copper plating film 241 of one conductive substrate 201 for touch panel can be arranged so that the length direction of the pattern is parallel to the X-axis direction in the drawing. The patterned copper plating film 242 of the other conductive substrate 202 for touch panel can be arranged so that the length direction of the pattern is parallel to the Y-axis direction in the drawing.

  Note that FIG. 3A is a view seen along the stacking direction of the laminated conductive substrate 30 for the touch panel as described above, and therefore, the patterned copper plating disposed on the top of each of the conductive substrates 201 and 202 for the touch panel. Only the coatings 241 and 242 are shown. In the laminated conductive substrate for a touch panel shown in FIGS. 3A and 3B, the patterned base metal layers 221 and 222 and the copper thin film layers 231 and 232 have the same pattern as the patterned copper plating films 241 and 242. ing. For this reason, the patterned base metal layers 221 and 222 and the copper thin film layers 231 and 232 also have a mesh shape in the same manner as the patterned copper plating films 241 and 242.

  The bonding method of the two laminated conductive substrates for touch panels is not particularly limited, and can be bonded and fixed with an adhesive or the like, for example.

  As described above, by laminating one conductive substrate 201 for a touch panel and the other conductive substrate 202 for a touch panel, as shown in FIG. 3A, the laminated layer for a touch panel provided with a mesh-like wiring. The conductive substrate 30 can be obtained.

  3A and 3B show an example in which a mesh-like wiring (wiring pattern) is formed by combining linear wirings, but the present invention is not limited to such a configuration, and a wiring pattern is configured. The wiring can have any shape. For example, the shape of the wiring constituting the mesh-like wiring pattern can be changed to various shapes such as jagged lines (zigzag straight lines) so that moire (interference fringes) does not occur between the images on the display.

  Here, the description has been given using the example of the laminated conductive substrate provided with the mesh-like wiring by laminating the two conductive substrates for the touch panel, but the (laminated) conductive substrate provided with the mesh-like wiring. The method is not limited to such a form. For example, the base metal layers 121 and 122, the copper thin film layers 131 and 132, and the copper plating films 141 and 142 are stacked on the first main plane 11a and the second main plane 11b of the insulator base 11 shown in FIG. 1B. A conductive substrate provided with mesh-like wiring can also be formed from the conductive substrate for touch panel 10B.

  In this case, for example, the base metal layer 121, the copper thin film layer 131, and the copper plating film 141 laminated on the first main plane 11a side of the insulator base material 11 are arranged in the Y-axis direction in FIG. Patterned into a plurality of linear patterns parallel to the vertical direction. Further, the base metal layer 122, the copper thin film layer 132, and the copper plating film 142 laminated on the second main plane 11b side of the insulator base material 11 have a plurality of linear shapes parallel to the X-axis direction in FIG. 1B. Pattern into patterns. Patterning can be performed, for example, by etching as described above.

  Thus, like the conductive substrate 40 for a touch panel shown in FIG. 4, the patterned copper thin film layer 431 and the copper plating film 441 formed on the first main plane 11 a side of the insulator base 11, the second With the patterned copper thin film layer 432 and the copper plating film 442 formed on the main plane 11b side, a conductive substrate having mesh-like wiring can be obtained. As shown in FIG. 4, the base metal layers 421 and 422 are also meshed like the copper thin film layers 431 and 432 and the copper plating films 441 and 442.

  3 and 4 show an example in which the blackening layer is not provided. However, as described above, a blackening layer can be further arranged on the upper surface of the copper plating film. Then, it can be patterned into the same shape as the underlying metal layer.

  According to the touch panel (laminated) conductive substrate of the present embodiment described above, the surface roughness of the other surface of the copper plating film can be in a predetermined range as described above. For this reason, the regular reflection of the light in the copper plating film surface can be suppressed. In addition, since the base metal layer is disposed between the copper thin film layer and the insulator base material, regular reflection of light incident through the insulator base material on the surface of the copper thin film layer can be suppressed. .

Furthermore, the (laminated) conductive substrate for touch panel of this embodiment has a copper layer composed of a copper thin film layer and a copper plating film, and the copper layer can function as a conductive layer. Thus, the conductive substrate for touch panels of this embodiment can make an electrical resistance value low by including the conductive layer using a metal.
(Manufacturing method of conductive substrate for touch panel, manufacturing method of laminated conductive substrate for touch panel)
Next, the manufacturing method of the conductive substrate for touch panels of this embodiment and the structural example of the laminated conductive substrate for touch panels are demonstrated.

The manufacturing method of the conductive substrate for touch panels of this embodiment can have the following processes.
A base metal layer forming step of forming a base metal layer containing nickel on at least one surface of the insulator base material.
A copper thin film layer forming step of forming a copper thin film layer on the underlying metal layer.
A copper plating film forming step of forming a copper plating film having one surface facing the copper thin film layer and another surface located on the opposite side of the one surface on the copper thin film layer.
And the density | concentration of sulfur can be 10 mass ppm or more and 150 mass ppm or less in the depth range from the surface of the other surface of a copper plating film to 0.3 micrometer.

  Moreover, the surface roughness (Ra) of the other surface of the copper plating film can be 0.01 μm or more and 0.15 μm or less.

  Although the manufacturing method of the conductive substrate for touchscreens of this embodiment and the manufacturing method of the laminated conductive substrate for touchscreens of this embodiment are demonstrated below, except the point demonstrated below, the above-mentioned conductive substrate for touchscreens and laminated conductive materials for touchscreens are demonstrated. Since it can be set as the structure similar to the case of a property board | substrate, description is abbreviate | omitted.

  The insulator base material used for the base metal layer forming step can be prepared in advance. Although the kind of insulator base material to be used is not particularly limited, an arbitrary material such as a glass substrate or various resin substrates can be used as described above. Since materials that can be particularly preferably used have already been described, description thereof will be omitted. The insulator base material can be cut into an arbitrary size in advance if necessary.

  The base metal layer forming step is a step of forming a base metal layer containing nickel on the insulator base material.

  As shown in FIG. 1A, the base metal layer can be formed on at least one main plane of the insulating base material 11, for example, the first main plane 11a. In addition, as shown in FIG. 1B, base metal layers 121 and 122 can be formed on both the first main plane 11 a and the second main plane 11 b of the insulator base 11. When the base metal layer is formed on both the first main plane 11a and the second main plane 11b of the insulator base 11, the base metal layer may be formed on both main planes simultaneously. Alternatively, the base metal layer may be formed on the other main plane after the base metal layer is formed on one of the main planes.

  The material constituting the base metal layer is not particularly limited, and the adhesion between the insulator base and the copper layer (copper thin film layer and copper plating film) and the suppression of light reflection on the surface of the copper layer are suppressed. The degree of stability and the degree of stability with respect to the environment (for example, humidity and temperature) in which the conductive substrate for the touch panel is used can be arbitrarily selected. Since materials that can be suitably used as the material constituting the base metal layer have already been described, description thereof is omitted here.

  The method for forming the underlying metal layer is not particularly limited, and for example, as described above, the film can be formed by a dry plating method. As the dry plating method, for example, a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used.

  When the base metal layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, 1 is selected from carbon, oxygen, hydrogen, and nitrogen in the atmosphere when forming the base metal layer. By adding a gas containing an element of at least a seed, it can be added to the base metal layer. For example, when adding carbon to the base metal layer, carbon monoxide gas and / or carbon dioxide gas is used. When oxygen is added, oxygen gas is used. When hydrogen is added, hydrogen gas and / or water is used. When nitrogen is added, nitrogen gas can be added to the atmosphere when dry plating is performed.

  A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas and used as an atmosphere gas during dry plating. Although it does not specifically limit as an inert gas, For example, argon can be used preferably.

  When the base metal layer is formed by a sputtering method, a target including a metal species that forms the base metal layer can be used as the target. In the case where the base metal layer contains an alloy, the target may be formed for each metal species contained in the base metal layer, and the alloy may be formed on the surface of the deposition target such as an insulator base material. It is also possible to use a target obtained by alloying the metal contained in.

  The underlying metal layer can be suitably formed using, for example, the roll-to-roll sputtering apparatus 50 shown in FIG.

  The base metal layer forming step will be described by taking the case of using the roll-to-roll sputtering apparatus 50 as an example.

  FIG. 5 shows a configuration example of the roll-to-roll sputtering apparatus 50.

  The roll-to-roll sputtering apparatus 50 includes a housing 51 that houses most of the components.

  In FIG. 5, the shape of the housing 51 is shown as a rectangular parallelepiped shape, but the shape of the housing 51 is not particularly limited, and may be any shape depending on the device accommodated therein, the installation location, the pressure resistance performance, and the like. It can be. For example, the shape of the housing 51 can be a cylindrical shape.

However, in order to remove residual gas not related to film formation at the start of film formation, it is preferable that the inside of the casing 51 can be depressurized to 10 ⁻³ Pa or less, and more preferably 10 ⁻⁴ Pa or less. Note that it is not necessary that the entire interior of the casing 51 can be reduced to the above pressure, and it can be configured such that only the lower region in the figure in which a can roll 53 (to be described later) where sputtering is performed can be reduced to the above pressure. .

  In the housing 51, an unwinding roll 52, a can roll 53, sputtering cathodes 54a to 54d, a front feed roll 55a, a rear feed roll 55b, tension rolls 56a and 56b, which supply a base material for forming a base metal layer, A winding roll 57 can be arranged. In addition to the above rolls, guide rolls 58a to 58h, a heater 61, and the like can be arbitrarily provided on the transport path of the base material on which the base metal layer is formed.

  The unwinding roll 52, the can roll 53, the front feed roll 55a, and the winding roll 57 can be provided with power by a servo motor. The unwinding roll 52 and the winding roll 57 are configured so that the tension balance of the base material on which the base metal layer is formed is maintained by torque control using a powder clutch or the like.

  The configuration of the can roll 53 is not particularly limited. For example, the surface of the can roll 53 is finished with hard chrome plating, and a coolant and a heating medium supplied from the outside of the casing 51 are circulated inside the can roll 53 so as to be adjusted to a substantially constant temperature. It is preferable to be configured to be able to.

  For example, the tension rolls 56a and 56b are preferably finished with hard chrome plating and provided with a tension sensor.

  Further, the front feed roll 55a, the rear feed roll 55b, and the guide rolls 58a to 58h are preferably finished with hard chrome plating.

  The sputtering cathodes 54 a to 54 d are preferably magnetron cathode types and arranged to face the can roll 53. The size of the sputtering cathodes 54a to 54d is not particularly limited, but the width direction dimension of the base material on which the base metal layer of the sputtering cathodes 54a to 54d is formed may be wider than the width of the base material on which the base metal layer is formed. preferable.

  The base material on which the base metal layer is formed is transported through a roll-to-roll sputtering apparatus 50, which is a roll-to-roll vacuum film forming apparatus, and the base metal is formed by sputtering cathodes 54a to 54d facing the can roll 53. A layer is deposited.

  When a base metal layer is formed using the roll-to-roll sputtering apparatus 50, a predetermined target is attached to the sputtering cathodes 54a to 54d, and a base material on which the base metal layer is formed is set on the unwinding roll 52. The inside of the apparatus is evacuated by vacuum pumps 60a and 60b. Thereafter, a sputtering gas such as argon is introduced into the casing 51 by the gas supply means 59. At this time, the flow rate of the sputtering gas and the opening of the pressure adjusting valve provided between the vacuum pump 60b and the casing 51 are adjusted to maintain the inside of the apparatus at, for example, 0.13 Pa or more and 13 Pa or less. It is preferred to carry out the membrane.

  The gas supply means 59 can have a cylinder (not shown) for each gas type of sputtering gas to be supplied, for example. Further, for example, a gas flow controller (MFC) or a valve may be provided between the cylinder and the casing 51 as shown in the drawing for each gas type so that the flow rate of the supplied sputtering gas can be adjusted.

  For example, vacuum gauges 62 a and 62 b are installed in the casing 51, and the degree of vacuum in the casing 51 when the casing 51 is evacuated or when sputtering gas is supplied into the casing 51. Can be configured to adjust.

  In this state, while discharging the base material from the unwinding roll 52 at a speed of, for example, 0.5 m or more and 10 m or less per minute, power is supplied from a sputtering DC power source connected to the sputtering cathodes 54a to 54d to cause sputtering discharge. Do. Thereby, a desired base metal layer can be continuously formed on the substrate.

  By forming the base metal layer by the dry plating method as described above, the adhesion between the insulator base material and the base metal layer can be particularly improved. And since a base metal layer can contain a metal as a main component, for example, its adhesiveness with a copper layer is also high. For this reason, peeling of a copper layer can be suppressed especially by arrange | positioning a base metal layer between an insulator base material and a copper layer.

  The thickness of the base metal layer is not particularly limited, but is preferably 3 nm to 50 nm, for example, more preferably 3 nm to 35 nm, and still more preferably 3 nm to 33 nm.

  Next, the copper thin film layer forming step will be described.

  As described above, the copper thin film layer can be formed on the base metal layer, and is preferably formed directly on the upper surface of the base metal layer without an adhesive.

  In the copper thin film layer forming step, the method for forming the copper thin film layer is not particularly limited, but it is preferable to form the film by, for example, a dry plating method. When the copper thin film layer is formed by a dry plating method, it can be formed directly on the base metal layer without using an adhesive.

  As the dry plating method, for example, a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used. In particular, it is more preferable to use a sputtering method because the film thickness can be easily controlled.

  When forming a copper thin film layer by a sputtering method, it can form suitably using the above-mentioned roll-to-roll sputtering apparatus 50, for example. Since the configuration of the roll-to-roll sputtering apparatus has already been described, the description thereof is omitted here.

  When a copper thin film layer is formed using the roll-to-roll sputtering apparatus 50, a copper target is attached to the sputtering cathodes 54a to 54d, and an insulating base material on which a base metal layer has been previously formed is unrolled roll 52. Set to. Then, the inside of the apparatus is evacuated by the vacuum pumps 60a and 60b. Thereafter, sputtering gas is introduced into the casing 51 by the gas supply means 59. At this time, the flow rate of the sputtering gas and the opening of the pressure adjusting valve provided between the vacuum pump 60b and the casing 51 are adjusted to maintain the inside of the apparatus at, for example, 0.13 Pa or more and 13 Pa or less. It is preferred to carry out the membrane.

  In this state, power is supplied from a sputtering DC power source connected to the sputtering cathodes 54a to 54d while the base material on which the copper thin film layer is formed from the unwinding roll 52 at a speed of, for example, 1 m to 20 m per minute. Sputtering discharge is performed. Thereby, a desired copper thin film layer can be continuously formed on a base material.

  The thickness of the copper thin film layer is not particularly limited, but it also functions as a power feeding layer when forming the copper plating film, and is preferably 10 nm or more, and more preferably 50 nm or more. Although the upper limit of the thickness of the copper thin film layer is not particularly limited, the copper thin film layer is formed by, for example, a dry plating method as described above, and is preferably 300 nm or less from the viewpoint of productivity, and is 200 nm or less. More preferably.

  Next, the copper plating film forming step will be described.

  The copper plating film can be formed on the copper thin film layer. The copper plating film is also preferably formed directly on the upper surface of the copper thin film layer without using an adhesive.

  The method for forming the copper plating film is not particularly limited, but it is preferable to form the film by, for example, a wet plating method.

  The conditions in the step of forming the copper plating film by the wet plating method, that is, the conditions for the electroplating treatment are not particularly limited, and various conditions according to ordinary methods may be adopted. For example, a copper plating film can be formed by supplying a base material on which a copper thin film layer is formed in a plating tank containing a copper plating solution and controlling the current density and the transport speed of the base material.

  In the conductive substrate for a touch panel of the present embodiment, the copper plating film can have one surface facing the copper thin film layer and another surface located on the opposite side of the one surface. And as for the copper plating film, it is preferable that the density | concentration of sulfur is 10 mass ppm or more and 150 mass ppm or less in the depth range from the other surface to 0.3 micrometer. As described above, when the sulfur concentration in the copper plating film satisfies the above-mentioned rule, the surface roughness of the other surface of the copper plating film is easily desired by etching the other surface after film formation. It is because it can be set as the range.

  The method for forming the copper plating film so that the sulfur concentration in the copper plating film satisfies the above-mentioned regulations is not particularly limited. For example, when the copper plating film is formed by a wet plating method, a plating solution to be used is used. The method of adding the organic compound containing a sulfur atom in the inside is mentioned. For example, an electroplating method can be preferably used as the wet plating method.

  When the copper plating film is formed by, for example, an electroplating method, the electroplating conditions are not particularly limited, and various conditions according to ordinary methods may be employed. For example, by controlling the content and current density of a sulfur atom-containing organic compound in a copper plating solution, which is a plating solution, and the conveyance speed, the above-mentioned sulfur is spread over a range from another surface to a depth of 0.3 μm. A copper plating film having a concentration can be formed.

  The content of the organic compound containing a sulfur atom in the copper plating solution used when forming the copper plating film is not particularly limited, but is preferably, for example, 2 mass ppm or more and 25 mass ppm or less, More preferably, it is 5 mass ppm or more and 15 mass ppm or less. This is because the content of the organic compound containing sulfur atoms in the copper plating solution is 2 mass ppm or more and 25 mass ppm or less, so that the sulfur concentration in the range from the other surface of the copper plating film to a depth of 0.3 μm. It is because it becomes especially easy to make the above range.

  Since materials that can be suitably used as the organic compound containing sulfur atoms added to the plating solution have already been described, the description thereof is omitted here.

  In addition, the sulfur concentration about the part beyond 0.3 micrometer from the other surface of a copper plating film is not specifically limited, For example, a sulfur concentration may be the said range over the whole copper plating film. The copper plating film preferably contains, for example, copper as a main component and further contains the above-mentioned concentration of sulfur, and the copper plating film is more preferably composed of copper and the above-described concentration of sulfur. However, even when the copper plating film is composed of copper and sulfur, inevitable components derived from the plating solution, impurities, and the like may be included in the copper plating film. Note that containing copper as a main component means that the copper content is 90 wt% or more.

  And in a copper plating film formation process, it is preferable to implement the etching process which etches about the other surface of a copper plating film after forming a copper plating film (after a copper plating film formation process). In the etching step, the surface roughness of the other surface of the copper plating film is preferably 0.01 μm or more and 0.15 μm or less. This can suppress specular reflection (regular reflection) on the surface of the copper plating film by setting the surface roughness of the other surface of the copper plating film to 0.01 μm or more and 0.15 μm or less. This is because the adhesiveness to the mask used when patterning the film or the like can be maintained.

  Although the method of etching the other surface of the copper plating film is not particularly limited, for example, it can be performed by using an etching solution. The etching solution to be used is not particularly limited, and a soft etching solution for copper can be preferably used.

  The film thickness of the copper layer composed of the copper thin film layer and the copper plating film formed on the base metal layer is not particularly limited, and the electrical resistance value required for the conductive substrate for touch panel and patterning are not limited. It can be arbitrarily selected according to the wiring width after the process. However, the film thickness of the copper layer composed of the copper thin film layer and the copper plating film is preferably 0.5 μm or more and 4.1 μm or less, and more preferably 0.5 μm or more and 3 μm or less.

  This is because the electrical resistance value of the conductive substrate for touch panel can be made sufficiently low by setting the film thickness of the copper layer to 0.5 μm or more, and when the copper layer is patterned, the wiring pattern is a desired wiring. This is because it is possible to suppress narrowing than the width or disconnection. And by making the film thickness of a copper layer into 4.1 micrometers or less, the area of a copper layer side part becomes small and reflection of the light by a copper layer side part can be suppressed. Furthermore, it is because it can suppress that side etching arises when etching a copper layer in order to form a wiring pattern.

  The copper layer composed of the copper thin film layer and the copper plating film can function as a conductive layer in the conductive substrate for a touch panel of the present embodiment. Thus, the conductive substrate for touch panels of this embodiment can make an electrical resistance value low by including the conductive layer using a metal.

  Moreover, in the manufacturing method of the conductive substrate for touchscreens of this embodiment, arbitrary processes other than the above-mentioned process can be added.

  For example, as described above, in the conductive substrate for a touch panel of the present embodiment, a blackened layer can be disposed on the copper plating film. For this reason, it can further have the blackening layer formation process which forms the blackening layer which concerns.

  Although it does not specifically limit as a material which comprises a blackening layer, It is preferable that a blackening layer contains Ni (nickel). For this reason, a blackening layer formation process can be made into the process of forming the blackening layer containing nickel, for example on a copper plating film.

  Description of materials that can be suitably used as the blackening layer is omitted because it has already been described.

  In the blackening layer forming step, the method for forming the blackening layer is not particularly limited, and it may be formed by dry plating as in the case of the base metal layer, or may be formed by wet plating. it can.

  The thickness of the blackened layer formed in the blackened layer forming step is not particularly limited, and may be arbitrarily selected according to the degree of reflectivity (regular reflectivity) required for the conductive substrate for touch panel. Can do.

  When the conductive substrate for a touch panel obtained by the method for manufacturing a conductive substrate for a touch panel of this embodiment is used for various applications such as a touch panel, a base metal layer, a copper thin film layer, and It is preferable that the copper plating film is patterned. The base metal layer, the copper thin film layer, and the copper plating film can be patterned in accordance with, for example, a desired wiring pattern, and the base metal layer, the copper thin film layer, and the copper plating film are patterned in the same shape. It is preferable.

  For this reason, the manufacturing method of the electroconductive board | substrate of this embodiment can have the patterning process of patterning a base metal layer, a copper thin film layer, and a copper plating film. The specific procedure of the patterning step is not particularly limited, and can be performed by an arbitrary procedure. For example, in the case of the conductive substrate 10A for a touch panel in which the base metal layer 12, the copper thin film layer 13, and the copper plating film 14 are laminated on the insulator base material 11 as shown in FIG. 1A, first, the other surface 14b of the copper plating film 14 is formed. A mask placement process is performed for placing a mask having a desired pattern thereon. Next, an etching step of supplying an etching solution to the other surface 14b of the copper plating film 14, that is, the surface side where the mask is disposed can be performed.

  The etching solution used in the etching step is not particularly limited, and can be arbitrarily selected according to the materials constituting the base metal layer, the copper thin film layer, and the copper plating film. For example, the etching solution can be changed for each layer, and the base metal layer, the copper thin film layer, and the copper plating film can be simultaneously etched with the same etching solution.

  The pattern formed in the etching process is not particularly limited. For example, the base metal layer, the copper thin film layer, and the copper plating film can be patterned to form a plurality of linear patterns. When patterned into a plurality of linear patterns, as shown in FIGS. 2A and 2B, the patterned base metal layer 22, the copper thin film layer 23, and the copper plating film 24 are parallel to each other and spaced apart from each other. Pattern.

  Further, as shown in FIG. 1B, the base metal layers 121 and 122, the copper thin film layers 131 and 132, and the copper plating films 141 and 142 are laminated on the first main plane 11a and the second main plane 11b of the insulator substrate 11. A patterning process for patterning can also be performed on the conductive substrate for touch panel 10B. In this case, for example, a mask placement step of placing a mask having a desired pattern on the other surfaces 141b and 142b of the copper plating films 141 and 142 can be performed. Next, an etching step of supplying an etching solution to the other surfaces 141b and 142b of the copper plating films 141 and 142, that is, the surface side where the mask is disposed can be performed.

  In the etching process, for example, the base metal layer 121, the copper thin film layer 131, and the copper plating film 141 laminated on the first main plane 11a side of the insulator base material 11 are arranged in the Y-axis direction in FIG. Can be patterned into a plurality of linear patterns parallel to the direction perpendicular to the vertical direction. Further, the base metal layer 122, the copper thin film layer 132, and the copper plating film 142 laminated on the second main plane 11b side of the insulator base material 11 have a plurality of linear shapes parallel to the X-axis direction in FIG. 1B. Can be patterned into patterns. Thereby, as shown in FIG. 4, the patterned copper thin film layer 431 and the copper plating film 441 formed on the first main plane 11a side of the insulator base material with the insulator base material 11 interposed therebetween, By the patterned copper thin film layer 432 and the copper plating film 442 formed on the second main plane 11b side, a conductive substrate for a touch panel provided with mesh-like wiring can be obtained.

  In addition, although the case where the blackening layer was not provided so far was described as an example, when the blackening layer was provided on the upper surface of the copper plating film, the mask was similarly arranged on the upper surface of the blackening layer, and the mask was arranged. By supplying an etching solution to the surface, the blackened layer can also be patterned into a desired shape.

  And the laminated conductive substrate which laminated | stacked several conductive substrates for touch panels demonstrated so far can also be manufactured. The manufacturing method of the laminated conductive substrate for touch panels can have a lamination process of laminating a plurality of conductive substrates obtained by the above-described conductive substrate manufacturing method.

  In the laminating step, for example, a plurality of patterned conductive substrates for touch panel shown in FIGS. 2A and 2B can be laminated. Specifically, as shown in FIGS. 3A and 3B, the first main plane 111a of the insulator base 111 of the one touch panel conductive substrate 201 and the insulator of the other touch panel conductive substrate 202 are provided. It can be implemented by laminating so that the second main plane 112b of the substrate 112 faces.

  After the lamination, the two touch-panel conductive substrates 201 and 202 can be fixed with an adhesive or the like, for example.

  In addition, the conductive substrate 201 for one touch panel is turned upside down, and the second main plane 111b of the insulator base 111 of the conductive substrate 201 for one touch panel is insulated from the conductive substrate 202 for the other touch panel. You may laminate | stack so that the 2nd main plane 112b of the body base material 112 may oppose.

  In the case of a laminated conductive substrate for a touch panel provided with a mesh-like wiring, in the lamination step, as shown in FIGS. 3A and 3B, a patterned copper thin film previously formed on one conductive substrate 201 for a touch panel The layer 231 and the copper plating film 241 can be laminated so that the patterned copper thin film layer 232 and the copper plating film 242 previously formed on the other touch panel conductive substrate 202 intersect.

  3A and 3B show an example in which a mesh-like wiring (wiring pattern) is formed by combining copper layers patterned in a linear shape, but the present invention is not limited to such a form. The wiring constituting the wiring pattern, that is, the shape of the patterned copper layer can be any shape. For example, the shape of the wiring constituting the mesh-like wiring pattern can be changed to various shapes such as jagged lines (zigzag straight lines) so that moire (interference fringes) does not occur between the images on the display.

  According to the conductive substrate for touch panel and the laminated conductive substrate for touch panel obtained by the method for manufacturing the conductive substrate for touch panel and the method for manufacturing the laminated conductive substrate for touch panel of the present embodiment, the surface of the other surface of the copper plating film The roughness can be set within a predetermined range as described above. For this reason, the regular reflection of the light in the other surface of a copper plating film can be suppressed. Furthermore, since the base metal layer is disposed between the copper thin film layer and the insulator base material, regular reflection of the light incident through the insulator base material on the surface of the copper thin film layer can also be suppressed. . Moreover, since it has a copper layer which consists of a copper thin film layer and a copper plating film and can function as a conductive layer, the electrical resistance value can be lowered.

Specific examples and comparative examples will be described below, but the present invention is not limited to these examples.
(Evaluation method)
First, a method for evaluating the obtained conductive substrate will be described.

(Sulfur concentration)
The sulfur concentration in the copper plating film was measured with a secondary ion mass spectrometer (D-Dynamics-Secondary Ion Mass Spectroscopy: D-SIMS).

  As the secondary ion mass spectrometer, an ims5f secondary ion mass spectrometer (manufactured by CAMECA) was used.

Primary ion conditions: Cs ⁺ , 14.5 keV, 30 nA, irradiation region: 150 μm × 150 μm, analysis region: φ60 μm, secondary ion polarity: negative.

  In general, when analyzing electropositive elements (Li, B, Mg, Ti, Cr, Mn, Fe, Ni, Mo, In, Ta, etc.), positive secondary ions are irradiated by irradiating oxygen ions. To detect. On the other hand, when analyzing electronegative elements (H, C, O, F, Si, S, Cl, As, Te, Au, etc.), negative secondary ions are detected by irradiation with cesium ions. Then, since it can measure with sufficient sensitivity, the above conditions were used.

Further, the measurement was performed at a sample chamber vacuum degree of 8.0 × 10 ⁻⁸ Pa and a sputtering rate of about 22 liters / sec. Sputtering was performed in advance under the same sputtering conditions as in actual analysis using a sample for sputtering rate measurement having a copper layer similar to the copper plating film, and the average sputtering rate was obtained. And when analyzing each sample, the depth was computed from sputtering time using this sputtering rate.

  The sulfur concentration was measured after the copper plating film was formed and the other surface of the copper plating film was etched. A part of the prepared sample was cut out and used for measurement of sulfur concentration.

(Surface roughness)
About the other surface of the copper plating film, the surface roughness (Ra) was measured with an optical profiler (manufactured by Zygo, NewView 6200). The surface roughness (Ra) was measured by a method based on JIS B 0651 (2001).

(Reflectance)
The reflectance (regular reflectance) was measured by installing a reflectance measurement unit on an ultraviolet-visible spectrophotometer (Shimadzu Corporation model: UV-2550).

  The copper plating film surface of the conductive substrate for a touch panel produced in the following examples and comparative examples was irradiated with light having a wavelength of 400 nm or more and 700 nm or less at intervals of 1 nm with an incident angle of 5 ° and a light receiving angle of 5 °. The reflectance was measured, and the average value was taken as the reflectance (regular reflectance).

Further, the base metal layer was irradiated with light having a wavelength of 400 nm or more and 700 nm or less through the insulator base material under the same conditions, and the reflectance (regular reflectance) on the surface of the base metal layer was measured.
(Wiring shape evaluation)
About the produced conductive substrate for touch panels, after patterning a base metal layer, a copper thin film layer, and a copper plating film, the shape of the wiring was observed with the laser microscope. When the wiring could be formed uniformly with a desired wiring width, it was evaluated as ◯. When a part of the formed wiring pattern includes a part different from the desired wiring width, it was evaluated as Δ. When the mask was peeled off during the etching process and could not be patterned into a desired shape, or when the copper plating film was hardly dissolved and could not be patterned into a desired shape, it was evaluated as x.
(Sample preparation conditions)
As examples and comparative examples, conductive substrates were produced under the conditions described below and evaluated by the above-described evaluation method.
[Example 1]
(Base metal layer formation process)
An insulator base material, which is a resin film made of polyethylene terephthalate resin (PET) having a width of 500 mm and a thickness of 100 μm, was set in the roll-to-roll sputtering apparatus 50 shown in FIG.

  In addition, when the total light transmittance was evaluated based on JISK7361-1 (2011) for the insulator base material made of polyethylene terephthalate resin, it was confirmed that it was 98%.

  And the base metal layer was formed into a film in one main plane of an insulator base material with the roll-to-roll sputtering apparatus 50. A Ni—Cr alloy layer containing oxygen was formed as the base metal layer.

  The film forming conditions for the base metal layer will be described.

  Ni-17 wt% Cr alloy targets were connected to the sputtering cathodes 54a to 54d of the roll-to-roll sputtering apparatus 50 shown in FIG.

  The heater 61 of the roll-to-roll sputtering apparatus 50 was heated to 60 ° C., and the insulator base material was heated to remove moisture contained in the insulator base material.

Subsequently, after the inside of the casing 51 was evacuated to 1 × 10 ⁻³ Pa, argon gas and oxygen gas were introduced to adjust the pressure in the casing 51 to 1.3 Pa. At this time, the supply amounts of argon gas and oxygen gas were adjusted so that the atmosphere in the casing 51 was 30% oxygen by volume and the balance was argon.

And while conveying an insulator base material from the unwinding roll 52, electric power is supplied from the DC power source for sputtering connected to the sputtering cathodes 54a to 54d, and sputtering discharge is performed, and a desired base metal layer is continuously formed on the base material. A film was formed. By this operation, a base metal layer was formed on one main plane of the insulator base so as to have a thickness of 20 nm.
(Copper thin film layer forming process)
The copper thin film layer was formed on the underlying metal layer by a roll-to-roll sputtering apparatus 50.

  In the copper thin film layer forming step, a copper target is connected to the sputtering cathodes 54a to 54d of the roll-to-roll sputtering apparatus 50 shown in FIG. 5 to form a film, and the substrate is insulated in the base metal layer forming step. What used the base metal layer as a film on the body base material was used.

  Conditions for forming the metal thin film layer were the same as those in the base metal layer forming step except that the following two points and the target were changed as described above.

A point in which the inside of the casing 51 is evacuated to 1 × 10 ⁻³ Pa, and then argon gas is introduced to adjust the pressure in the casing 51 to 1.3 Pa.

The point which formed the copper thin film layer so that film thickness might be set to 100 nm.
(Copper plating film forming process)
In the copper plating film forming step, the copper plating film was formed to have a thickness of 1.0 μm by electroplating.

  The copper plating solution used for forming the copper plating film is a copper sulfate solution having a temperature of 27 ° C. and a pH of 1 or less, and SPS (BiS (3-sulfopropyl) disulphide) 8 is used as an organic compound containing a sulfur atom. Mass ppm was contained.

  About the formed copper plating film, when the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm was measured by the above method, it was 60 mass ppm.

  Then, clean etch CPE-750 (Mitsubishi Gas Chemical Co., Ltd.), which is an etching solution for copper, is supplied to the entire other surface of the copper plating film, and the entire other surface of the copper plating film is etched with the etching solution for 10 seconds. Etching was performed while maintaining the contact state.

  About the other surface of the copper plating film after etching, sulfur concentration (sulfur concentration in the copper plating film having a depth of 0.3 μm from the surface of the other surface), surface roughness (Ra), and positive The reflectance was measured. The results are shown in Table 1.

Moreover, when the regular reflectance in the surface of a base metal layer was measured through the insulator base material, it was confirmed that it was 28%.
(Patterning process)
The obtained conductive substrate for touch panel includes a mask placement step of placing a mask on the upper surface of the copper plating film, and an etching step of performing etching by supplying an etchant to the upper surface of the copper plating film on which the mask is placed. A patterning step was performed. Thereby, as shown to FIG. 2A and FIG. 2B, the conductive substrate for touchscreens which has a linear wiring pattern was produced. When etching is performed, a cupric chloride aqueous solution is used as an etchant.

  The above-described wiring shape evaluation was performed on the wiring pattern of the manufactured conductive substrate for a touch panel.

  In addition, according to the same procedure and conditions as described so far, the base metal layer, the copper thin film layer, and the copper plating film are laminated on the insulator base material and patterned into the same shape as described above. Another sheet of conductive substrate was produced.

Then, the produced two conductive substrates for touch panel were laminated as shown in FIGS. 3A and 3B, and both conductive substrates were fixed with an adhesive to produce a laminated conductive substrate for touch panel.
[Example 2]
In the copper plating film forming step, a conductive substrate for a touch panel was prepared in the same manner as in Example 1 except that etching was performed so that the entire other surface of the copper plating film was in contact with the etching solution for 15 seconds. Evaluation was performed. The evaluation results are shown in Table 1.

  After forming the copper plating film, before etching the other surface of the copper plating film, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.

  When the regular reflectance on the surface of the base metal layer was measured through the insulator base material, it was confirmed to be 28%.

In addition, as in Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.
[Example 3]
A conductive substrate for a touch panel was prepared and evaluated in the same manner as in Example 1 except that the insulator substrate was a resin film made of cycloolefin polymer resin having a width of 500 mm and a thickness of 100 μm as the insulator substrate. Went. The evaluation results are shown in Table 1.

  In addition, about the insulator base material made from cycloolefin polymer resin used, when the total light transmittance was evaluated based on JISK7361-1 (2011), it was confirmed that it was 92%. In addition, after etching the copper plating film, before etching the other surface of the copper plating film, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.

  When the regular reflectance on the surface of the base metal layer was measured through the insulator base material, it was confirmed to be 25%.

Then, similarly to Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.
[Example 4]
In the copper plating film forming step, a conductive substrate for a touch panel was prepared and evaluated in the same manner as in Example 1 except that the SPS addition to the copper plating solution was 10 mass ppm and the film thickness of the copper plating film was 4 μm. Went. The evaluation results are shown in Table 1.

  After forming the copper plating film, before etching the other surface of the copper plating film, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.

  When the regular reflectance on the surface of the base metal layer was measured through the insulator base material, it was confirmed to be 28%.

In addition, as in Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.
[Example 5]
In the copper plating film forming step, a conductive substrate for a touch panel was prepared in the same manner as in Example 1 except that SPS addition to the copper plating solution was 5 ppm by mass and the film thickness of the copper plating film was 0.4 μm. And evaluated. The evaluation results are shown in Table 1.

  After forming the copper plating film, before etching the other surface of the copper plating film, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.

  When the regular reflectance on the surface of the base metal layer was measured through the insulator base material, it was confirmed to be 28%.

In addition, as in Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.
[Example 6]
In the copper plating film forming step, the conductive substrate for the touch panel is the same as in Example 1 except that the SPS addition to the copper plating solution is 5 ppm by mass and the film thickness of the formed copper plating film is 0.3 μm. Were prepared and evaluated. The evaluation results are shown in Table 1.

  After forming the copper plating film, before etching the other surface of the copper plating film, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.

  When the regular reflectance on the surface of the base metal layer was measured through the insulator base material, it was confirmed to be 28%.

In addition, as in Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.
[Example 7]
The conductive substrate for touch panel in the same manner as in Example 1 except that in the copper plating film forming step, SPS addition to the copper plating solution was 10 ppm by mass, and the film thickness of the formed copper plating film was 4.1 μm. Were prepared and evaluated. The evaluation results are shown in Table 1.

  After forming the copper plating film, before etching the other surface of the copper plating film, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.

  When the regular reflectance on the surface of the base metal layer was measured through the insulator base material, it was confirmed to be 28%.

In addition, as in Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.
[Comparative Example 1]
In the copper plating film forming step, a conductive substrate for a touch panel was prepared and evaluated in the same manner as in Example 1 except that the addition of SPS to the copper plating solution was 1 mass ppm. The evaluation results are shown in Table 1.

  After forming the copper plating film, before etching the other surface of the copper plating film, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.

  When the regular reflectance on the surface of the base metal layer was measured through the insulator base material, it was confirmed to be 28%.

In addition, as in Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.
[Comparative Example 2]
In the copper plating film forming step, a conductive substrate for a touch panel was prepared and evaluated in the same manner as in Example 1 except that SPS addition to the copper plating solution was 40 ppm by mass. The evaluation results are shown in Table 1.

  After forming the copper plating film, before etching the other surface of the copper plating film, the sulfur concentration in the copper plating film from the surface of the other surface of the copper plating film to a depth of 0.3 μm is set as above. When measured by the method, it was confirmed that it was the same as the value measured after the etching shown in Table 1.

  When the regular reflectance on the surface of the base metal layer was measured through the insulator base material, it was confirmed to be 28%.

  In addition, as in Example 1, two touch panel conductive substrates manufactured under the same conditions were stacked to manufacture a touch panel stacked conductive substrate.

表１の結果から、実施例１〜７については、銅めっき被膜の他の面の表面粗さＲａが０．０１μｍ以上０．１５μｍ以下となっており、銅めっき被膜の他の面における反射率も３０％以下と十分に低くなっていることを確認できた。また、実施例１〜５については、配線形状評価も〇となっており、エッチング工程により所望の配線パターンとすることができたことを確認できた。

From the result of Table 1, about Examples 1-7, surface roughness Ra of the other surface of a copper plating film is 0.01 micrometer or more and 0.15 micrometer or less, and the reflectance in the other surface of a copper plating film It was also confirmed that it was sufficiently low at 30% or less. Moreover, about Examples 1-5, the wiring shape evaluation was also (circle) and it has confirmed that it was able to be set as the desired wiring pattern by the etching process.

  In Example 6, the film thickness of the copper plating film was 0.3 μm, and the film thickness of the copper layer was as thin as 0.4 μm. Therefore, there was a portion that was narrower than the desired wiring width in the obtained wiring pattern. It was. For this reason, the wiring shape evaluation was Δ.

  In Example 7, the thickness of the copper plating film was 4.1 μm and the thickness of the copper layer was 4.2 μm. Therefore, in the etching process in the patterning process, a part of the wiring pattern was side-etched. And a portion different from the desired wiring width was included. For this reason, the wiring shape evaluation was Δ.

  On the other hand, in Comparative Example 1, the surface roughness Ra of the other surface of the copper plating film is as small as 0.009 μm, and the reflectance at the other surface of the copper plating film is as high as 31%. I was able to confirm. Moreover, in the etching process in a patterning process, since the reactivity with respect to the etching liquid of a copper plating film was low and the undissolved residue produced, evaluation of wiring shape was set to x.

  Moreover, in Comparative Example 2, since the surface roughness of the other surface of the copper plating film was as large as 0.16 μm, it was confirmed that the reflectance on the surface of the copper plating film was sufficiently suppressed to 9%. However, in the etching process, the mask peels off, a gap is created between the mask and the other surface of the copper plating film, and the linearity of the formed wiring pattern is confirmed as a result of the evaluation of the wiring shape. did it.

  Moreover, about the laminated conductive substrate for touch panels produced in Examples 1-7, it has confirmed visually that a mesh-shaped wiring pattern was included as shown to FIG. 3A and FIG. 3B. On the other hand, in Comparative Example 1, since the undissolved portion was generated in the wiring pattern as described above, it was not possible to obtain a laminated conductive substrate for a touch panel including a mesh-like wiring pattern. In Comparative Example 2, since the linearity of the wiring pattern was poor, it was not possible to obtain a laminated conductive substrate for a touch panel having a desired mesh-like wiring pattern.

  Although the conductive substrate for touch panels and the method for manufacturing the conductive substrate for touch panels have been described in the above embodiments and examples, the present invention is not limited to the above embodiments and examples. Various modifications and changes are possible within the scope of the gist of the present invention described in the claims.

  This application claims priority based on Japanese Patent Application No. 2014-157061 filed with the Japan Patent Office on July 31, 2014. The entire contents of Japanese Patent Application No. 2014-157061 are incorporated herein by reference. Incorporate.

10A, 10B, 20, 201, 202, 40 Touch panel conductive substrate 11, 111, 112 Insulator base material 11a, 111a, 112a First main plane 11b, 111b, 112b Second main plane 12, 121, 122 , 22, 221, 222, 421, 422 Underlying metal layer

13, 131, 132, 23, 231, 232, 431, 432 Copper thin film layers 14, 141, 142, 24, 241, 242, 441, 442 Copper plating film 30 Multilayer conductive substrate for touch panel

Claims (8)

An insulator substrate;
An underlying metal layer disposed on at least one surface of the insulator substrate and containing nickel;
A copper thin film layer disposed on the base metal layer;
A copper plating film disposed on the copper thin film layer and having one surface facing the copper thin film layer and another surface located on the opposite side of the one surface;
In the range of depth from the surface of the other surface of the copper plating film to 0.3 μm, the concentration of sulfur is 10 mass ppm or more and 150 mass ppm or less,
The conductive substrate for touch panels whose surface roughness (Ra) of the other surface of the said copper plating film is 0.01 micrometer or more and 0.15 micrometer or less.   2. The resin substrate according to claim 1, wherein the insulator base material is a resin substrate selected from a polyamide film, a polyester film, a polyethylene naphthalate film, a cycloolefin film, a polyimide film, and a polycarbonate film. Conductive substrate for touch panel.   The conductive substrate for a touch panel according to claim 1 or 2, wherein the total light transmittance of the insulator base material is 90% or more.   4. The conductivity for a touch panel according to claim 1, wherein an average regular reflectance of the base metal layer in a wavelength range of 400 nm to 700 nm through the insulator base material is 30% or less. 5. substrate.   5. The conductive substrate for a touch panel according to claim 1, wherein a film thickness of the copper layer composed of the copper thin film layer and the copper plating film is 0.5 μm or more and 4.1 μm or less. A blackening layer is further provided on the copper plating film,
The conductive substrate for a touch panel according to any one of claims 1 to 5, wherein the blackening layer contains nickel.   The conductive substrate for a touch panel according to claim 6, wherein an average regular reflectance of the blackened layer in a wavelength range of 400 nm to 700 nm is 30% or less. A base metal layer forming step of forming a base metal layer containing nickel on at least one surface of the insulator base;
A copper thin film layer forming step of forming a copper thin film layer on the base metal layer;
A copper plating film forming step of forming a copper plating film on the copper thin film layer, the copper plating film having one surface facing the copper thin film layer and another surface located on the opposite side of the one surface; ,
In the range of depth from the surface of the other surface of the copper plating film to 0.3 μm, the concentration of sulfur is 10 mass ppm or more and 150 mass ppm or less,
The manufacturing method of the conductive substrate for touchscreens which forms the said copper plating film so that the surface roughness (Ra) of the other surface of the said copper plating film may be 0.01 micrometer or more and 0.15 micrometer or less.

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