JP6687033B2 - Conductive substrate - Google Patents

Description

  The present invention relates to a conductive substrate.

  The capacitive touch panel converts information on the position of an object on the surface of the panel into an electric signal by detecting a change in electrostatic capacitance caused by the object on the surface of the panel. Since the conductive substrate used for the capacitive touch panel is installed on the surface of the display, the material of the conductive layer of the conductive substrate is required to have low reflectance and be difficult to be visually recognized.

  Therefore, as the material of the conductive layer used for the conductive substrate for a touch panel, a material having a low reflectance and being difficult to be visually recognized is used, and is formed on a transparent substrate or a transparent film.

  For example, as disclosed in Patent Document 1, a transparent conductive film for a touch panel in which an ITO (indium oxide-tin) film is formed as a transparent conductive film on a polymer film has been conventionally used.

  By the way, in recent years, a display having a touch panel has become larger in size, and in response to this, a conductive substrate such as a transparent conductive film for a touch panel is also required to have a large area. However, since ITO has a high electric resistance value, there is a problem that it cannot be applied to a large area of the conductive substrate.

  Therefore, in order to suppress the electric resistance of the conductive substrate, a method has been proposed in which copper mesh wiring is used as the conductive layer and the surface of the copper mesh wiring is blackened.

  For example, in Patent Document 2, a step of forming a resist layer on a copper thin film supported by a film, a step of processing at least the resist layer into a stripe-shaped wiring pattern and a wiring pattern for extraction by a photolithography method, and an exposure There is disclosed a method of manufacturing a film-shaped touch panel sensor, which includes a step of removing the copper thin film by etching to form a striped copper wiring and a copper wiring for extraction, and a step of blackening the copper wiring.

  However, in Patent Document 2, the method of blackening the copper wiring after forming the striped copper wiring by etching is adopted, and there is a problem in productivity because the number of manufacturing steps increases.

  Therefore, the inventors of the present invention, regarding a conductive substrate in which a metal layer and a blackening layer are formed on a transparent substrate, the metal layer and the blackening layer are etched to obtain a conductive substrate having a desired wiring pattern. By doing so, the manufacturing process was reduced, and a method for manufacturing a conductive substrate that can achieve high productivity was examined.

Japanese Patent Laid-Open No. 2003-151358 Japanese Patent Laid-Open No. 2013-206315

  However, in some cases, the metal layer and the blackened layer have greatly different reactivities to the etching solution. Therefore, if an attempt is made to etch the metal layer and the blackened layer at the same time, one of the layers may not be etched into the desired shape, or may not be uniformly etched in the plane, resulting in dimensional variation. There is a problem that the blackened layer and the blackened layer cannot be etched at the same time.

  In view of the above problems of the conventional art, it is an object of one aspect of the present invention to provide a conductive substrate including a metal layer and a blackening layer that can be simultaneously etched.

In order to solve the above problems, in one aspect of the present invention,
A transparent substrate,
A metal layer formed on at least one surface of the transparent substrate,
And a blackening layer formed on at least one surface of the transparent substrate,
The blackened layer contains a simple substance and compound of copper and a simple substance and / or compound of nickel,
The copper compound contains copper oxide and copper hydroxide,
When the blackened layer was measured by X-ray photoelectron spectroscopy,
The peak area of the copper oxide is 40 or more when the sum of the peak area of the copper oxide and the peak area of the copper hydroxide, which are obtained by using the Cu 2P _3/2 spectrum and the Cu LMM spectrum, is 100 or more. A conductive substrate having a peak area of the copper hydroxide of 60 or less is provided.

  According to one aspect of the present invention, it is possible to provide a conductive substrate including a metal layer and a blackening layer that can be simultaneously etched.

Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. Sectional drawing of the electroconductive substrate which concerns on embodiment of this invention. The top view of the conductive substrate provided with the mesh-shaped wiring which concerns on embodiment of this invention. Sectional drawing in the AA 'line of FIG. Sectional drawing in the AA 'line of FIG. Explanatory drawing of a roll-to-roll sputtering apparatus.

An embodiment of the conductive substrate and the method of manufacturing the conductive substrate of the present invention will be described below.
(Conductive substrate)
The conductive substrate of this embodiment can have a transparent base material, a metal layer, and a blackening layer. The metal layer can be formed on at least one surface of the transparent substrate, and the blackening layer can be formed on at least one surface of the transparent substrate. Further, the blackening layer contains a simple substance and compound of copper and a simple substance and / or compound of nickel, and may include copper oxide and copper hydroxide as the compound of copper.

Then, regarding the blackened layer, when measured by X-ray photoelectron spectroscopy, the peak area of the copper oxide and the peak area of the copper hydroxide obtained using the Cu 2P _3/2 spectrum and the Cu LMM spectrum were determined. When the sum is 100, the peak area of copper oxide can be 40 or more and the peak area of copper hydroxide can be 60 or less.

  The conductive substrate in the present embodiment means a substrate having a metal layer and a blackening layer on the surface of the transparent base material before patterning the metal layer, and a substrate having the metal layer patterned, that is, a wiring substrate. And, including. Since the conductive substrate after patterning the metal layer and the blackening layer includes the region where the transparent base material is not covered with the metal layer or the like, light can be transmitted therethrough, and the substrate is a transparent conductive substrate.

  Here, first, each member included in the conductive substrate of the present embodiment will be described below.

  The transparent substrate is not particularly limited, and an insulating film that transmits visible light, a glass substrate, or the like can be preferably used.

  As the insulating film that transmits visible light, for example, a polyamide-based film, a polyethylene terephthalate-based film, a polyethylene naphthalate-based film, a cycloolefin-based film, a polyimide-based film, a resin film such as a polycarbonate-based film, or the like can be preferably used. . In particular, PET (polyethylene terephthalate), COP (cycloolefin polymer), PEN (polyethylene naphthalate), polyamide, polyimide, polycarbonate and the like can be more preferably used as the material of the insulating film that transmits visible light.

  The thickness of the transparent base material is not particularly limited, and can be arbitrarily selected according to the strength required for a conductive substrate, the capacitance, the light transmittance, and the like. The thickness of the transparent substrate can be, for example, 10 μm or more and 200 μm or less. Especially when it is used for a touch panel, the thickness of the transparent substrate is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. When it is used for a touch panel, for example, especially when it is required to reduce the thickness of the entire display, the thickness of the transparent substrate is preferably 20 μm or more and 50 μm or less.

  The total light transmittance of the transparent substrate is preferably high, and for example, the total light transmittance is preferably 30% or more, more preferably 60% or more. When the total light transmittance of the transparent substrate is within the above range, it is possible to sufficiently secure the visibility of the display when used for a touch panel application, for example.

  The total light transmittance of the transparent substrate can be evaluated by the method defined in JIS K 7361-1.

  Next, the metal layer will be described.

  The material forming the metal layer is not particularly limited, and a material having electric conductivity suitable for the application can be selected, but copper is used as the material forming the metal layer because of its excellent electrical characteristics and ease of etching treatment. It is preferable. That is, the metal layer preferably contains copper.

  When the metal layer contains copper, the material forming the metal layer is, for example, Cu and at least one metal selected from Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, Co and W. It is preferable that it is a copper alloy or a material containing copper and one or more kinds of metals selected from the above metals. Further, the metal layer may be a copper layer made of copper.

  The method of forming the metal layer is not particularly limited, but it is preferable that the metal layer is formed without disposing an adhesive between the other member and the metal layer in order not to reduce the light transmittance. That is, the metal layer is preferably formed directly on the upper surface of another member. The metal layer can be formed on the blackened layer or on the upper surface of the transparent substrate. Therefore, the metal layer is preferably formed directly on the blackened layer or the upper surface of the transparent substrate.

  Since the metal layer is directly formed on the upper surface of the other member, it is preferable that the metal layer has a metal thin film layer formed by dry plating. The dry plating method is not particularly limited, but for example, a vapor deposition method, a sputtering method, an ion plating method or the like can be used. In particular, it is preferable to use the sputtering method because the control of the film thickness is easy.

  When making the metal layer thicker, the metal thin film layer can be formed by dry plating and then the metal plating layer can be laminated by using the wet plating method. Specifically, for example, a metal thin film layer is formed on a transparent base material or a blackened layer by a dry plating method, the metal thin film layer is used as a power feeding layer, and a metal plating layer is formed by electrolytic plating which is a kind of wet plating method. Can be formed.

  When the metal layer is formed only by the dry plating method as described above, the metal layer can be composed of a metal thin film layer. When the metal layer is formed by combining the dry plating method and the wet plating method, the metal layer can be composed of a metal thin film layer and a metal plating layer.

  Forming the metal layer directly on the transparent substrate or the blackened layer without an adhesive by forming the metal layer by the dry plating method alone or by combining the dry plating method and the wet plating method as described above. You can

  The thickness of the metal layer is not particularly limited, and when the metal layer is used as wiring, it can be arbitrarily selected according to the magnitude of the current supplied to the wiring, the wiring width, and the like.

  However, when the metal layer is thick, side etching is likely to occur because it takes time to perform etching for forming a wiring pattern, and it may be difficult to form fine lines. Therefore, the thickness of the metal layer is preferably 5 μm or less, more preferably 3 μm or less.

  Further, in particular, from the viewpoint of lowering the resistance value of the conductive substrate and allowing sufficient current supply, for example, the metal layer preferably has a thickness of 50 nm or more, more preferably 60 nm or more, and more preferably 150 nm. It is more preferable that the above is satisfied.

  When the metal layer has the metal thin film layer and the metal plating layer as described above, the total thickness of the metal thin film layer and the metal plating layer is preferably within the above range.

  Whether the metal layer is formed of a metal thin film layer or a metal thin film layer and a metal plating layer, the thickness of the metal thin film layer is not particularly limited, but is, for example, 50 nm. It is preferable that the thickness is 500 nm or less.

  Next, the blackened layer will be described.

  Since the metal layer has a metallic luster, the wiring reflects light only by forming the wiring by etching the metal layer on the transparent base material, and the visibility of the display decreases when used as a wiring board for a touch panel, for example. There was a problem of doing. Therefore, methods of providing a blackened layer have been studied. However, the reactivity of the metal layer and the blackening layer with respect to the etching solution may be significantly different, and if the metal layer and the blackening layer are simultaneously etched, the metal layer and the blackening layer can be etched into a desired shape. However, there was a problem such as dimensional variation. Therefore, in a conductive substrate that has been conventionally studied, it is necessary to etch the metal layer and the blackening layer in separate steps, and it is difficult to etch the metal layer and the blackening layer at the same time, that is, in one step. Met.

  Therefore, the inventors of the present invention have a blackened layer that can be etched at the same time as the metal layer, that is, have excellent reactivity to an etching solution. A blackened layer that can suppress the phenomenon was investigated. Then, the blackened layer contains a simple substance and a compound of copper and a simple substance and / or a compound of nickel, and the compound of copper contains a copper oxide and a copper hydroxide. The present invention has been completed by finding that the property can be made almost equal to that of the metal layer.

  In the blackened layer of the conductive substrate of the present embodiment, the blackened layer contains a simple substance and compound of copper and a simple substance and / or compound of nickel as described above, and copper oxide and copper water are used as the compound of copper. It may include an oxide.

  Here, the nickel compound contained in the blackening layer is not particularly limited, but examples thereof include oxides and / or hydroxides. Therefore, the blackened layer contains, for example, a simple substance of copper, a copper oxide, and a copper hydroxide, and further contains at least one selected from simple substance of nickel, nickel oxide, and nickel hydroxide. be able to.

  When the blackening layer contains copper hydroxide as described above, the blackening layer becomes a color capable of suppressing the reflection of light on the surface of the metal layer, and can function as a blackening layer. Further, particularly by containing a nickel compound, for example, a nickel oxide, it is possible to suppress the reflection of light on the surface of the metal layer and enhance the function as the blackening layer.

  Further, by further containing the copper oxide, it is possible to enhance the reactivity with respect to the etching solution and to have the reactivity with the etching solution that is substantially equal to that of the metal layer.

  The ratio of each component contained in the blackening layer is not particularly limited, and may be arbitrarily set according to the degree of suppression of light reflection required for the conductive substrate, the degree of reactivity with an etching solution, and the like. It can be selected and is not particularly limited. However, according to the study of the inventors of the present invention, from the viewpoint of sufficiently enhancing the reactivity with respect to the etching solution, for example, when the blackening layer is measured by X-ray photoelectron spectroscopy (XPS), the peak of the copper oxide is Is preferably contained in the blackened layer to the extent that it can be identified as.

In particular, regarding the blackened layer, when measured by X-ray photoelectron spectroscopy (XPS), the peak area of the copper oxide and the copper hydroxide obtained using the Cu 2P _3/2 spectrum and the Cu LMM spectrum were determined. When the sum of the peak areas is 100, the peak area of copper oxide (area ratio) is preferably 40 or more, and the peak area of copper hydroxide (area ratio) is preferably 60 or less.

That is, the peak area ratio of the copper oxide is 40 with respect to the peak areas of the copper oxide and the copper hydroxide, which are obtained by using the Cu 2P _3/2 spectrum and the Cu LMM spectrum when the blackened layer is measured by XPS. The above is preferable. The peak area ratio of copper hydroxide is preferably 60 or less.

  This is because the blackening layer contains copper oxide and copper hydroxide in a predetermined ratio, and thus particularly enhances the function of suppressing light reflection as the blackening layer and the reactivity with the etching solution. This is because they can be compatible with each other.

  The method for forming the blackening layer is not particularly limited, and any method can be selected as long as it can be formed so as to contain the above-mentioned components. However, the sputtering method is preferably used because the composition of the blackening layer can be controlled relatively easily so as to contain the above-mentioned components.

  The blackened layer is preferably formed directly on the upper surface of another member such as the transparent substrate and / or the metal layer without an adhesive. Then, by forming the blackened layer by a dry plating method, the blackened layer can be directly formed on the upper surface of another member without using an adhesive. Therefore, also from this viewpoint, the sputtering method is preferable as the method for forming the blackened layer.

  When the blackened layer of the conductive substrate of the present embodiment is formed by the sputtering method, an alloy target containing nickel and copper can be used. In addition, when the blackened layer does not contain other than nickel and copper as metal components, an alloy target made of nickel and copper can be used.

  Then, while supplying oxygen gas and water vapor into the chamber, the blackening layer can be formed by the sputtering method using the above-mentioned target. Thereby, as a copper compound, a black oxide containing copper oxide derived from oxygen gas supplied to the chamber and copper in the target, and copper hydroxide derived from water vapor supplied to the chamber and copper in the target. A layer can be formed.

  At this time, the ratio of the components contained in the blackened layer can be selected by selecting the ratio of the oxygen gas supplied into the chamber and the water vapor.

  In particular, it is possible to simultaneously supply an inert gas, an oxygen gas, and water vapor in the chamber to adjust the amounts of oxygen and water vapor to be supplied to the blackened layer, and to adjust the partial pressures of each. preferable. The inert gas is not particularly limited, and argon or helium can be preferably used. Also, water vapor can be supplied as a mixed gas with an inert gas.

  When forming the blackened layer as described above, the supply ratio of each gas of the inert gas, oxygen gas, and water vapor to be supplied to the chamber is not particularly limited, and may depend on the target composition of the blackened layer, etc. It can be selected arbitrarily.

For example, when a preliminary test or the like is performed and the formed blackened layer is measured by X-ray photoelectron spectroscopy (XPS), the peak area of each component obtained using the Cu 2P _3/2 spectrum and Cu LMM spectrum The supply conditions of each gas can be selected so that the ratio is in the above-mentioned preferable range.

  The thickness of the blackening layer is not particularly limited and can be arbitrarily selected according to the degree of suppressing the reflection of light required of the conductive substrate.

  The thickness of the blackened layer is preferably, for example, 5 nm or more, and more preferably 20 nm or more. The blackening layer has a function of suppressing reflection of light by the metal layer, but when the thickness of the blackening layer is thin, reflection of light by the metal layer may not be sufficiently suppressed. On the other hand, it is preferable to set the thickness of the blackened layer to 5 nm or more, because the reflection on the surface of the metal layer can be more reliably suppressed.

  Further, the upper limit of the thickness of the blackened layer is not particularly limited, but if it is thicker than necessary, the time required for etching when forming the wiring becomes long and the cost is increased. Therefore, the thickness of the blackened layer is preferably 100 nm or less, more preferably 50 nm or less.

  Next, a configuration example of the conductive substrate will be described.

  As described above, the conductive substrate of this embodiment can have the transparent base material, the metal layer, and the blackening layer. At this time, the order of laminating the metal layer and the blackening layer on the transparent substrate is not particularly limited. Also, a plurality of metal layers and a plurality of blackening layers may be formed. However, in order to suppress the reflection of light on the surface of the metal layer, it is preferable to dispose the blackening layer on the surface of the surface of the metal layer where the reflection of light is particularly desired to be suppressed. When it is required to particularly suppress the reflection of light on the surface of the metal layer, the blackened layer has a laminated structure formed on the upper surface and the lower surface of the metal layer, that is, the metal layer is sandwiched between the blackened layers. You can also

  A specific configuration example will be described below with reference to FIGS. 1A, 1B, 2A, and 2B. FIG. 1A, FIG. 1B, FIG. 2A, and FIG. 2B show examples of cross-sectional views of the conductive substrate of the present embodiment in a plane parallel to the laminating direction of the transparent base material, the metal layer, and the blackening layer.

  The conductive substrate of the present embodiment may have a structure in which a metal layer and a blackening layer are laminated in this order from the transparent base material side on at least one surface of the transparent base material, for example.

  Specifically, for example, like the conductive substrate 10A shown in FIG. 1A, the metal layer 12 and the blackening layer 13 may be laminated in this order on the one surface 11a side of the transparent substrate 11. it can. Further, like the conductive substrate 10B shown in FIG. 1B, the metal layers 12A and 12B and the black layer are formed on the one surface 11a side of the transparent base material 11 and the other surface (the other surface) 11b side, respectively. The chemical layers 13A and 13B can be laminated one by one in that order. The order of stacking the metal layers 12 (12A, 12B) and the blackening layer 13 (13A, 13B) is not limited to the example of FIGS. 1A and 1B, and the blackening layer 13 may be applied from the transparent substrate 11 side. It is also possible to stack (13A, 13B) and the metal layer 12 (12A, 12B) in this order.

  Alternatively, for example, a plurality of blackening layers may be provided on one surface side of the transparent substrate 11. In this case, for example, a structure in which a blackening layer, a metal layer, and a blackening layer are formed in that order on at least one surface of the transparent base material from the transparent base material side can be adopted.

  Specifically, for example, like the conductive substrate 20A shown in FIG. 2A, the first blackening layer 131, the metal layer 12, and the second blackening layer are provided on the one surface 11a side of the transparent base material 11. 132 and 132 may be stacked in that order.

  Also in this case, the transparent substrate 11 may have a structure in which a metal layer, a first blackening layer, and a second blackening layer are laminated on both surfaces. Specifically, like the conductive substrate 20B shown in FIG. 2B, the first blackening layer is provided on one surface 11a side of the transparent base material 11 and on the other surface (the other surface) 11b side thereof. 131A and 131B, the metal layers 12A and 12B, and the second blackening layers 132A and 132B can be stacked in that order.

  1B and 2B, when a metal layer and a blackening layer are laminated on both sides of the transparent substrate, the layers laminated above and below the transparent substrate 11 with the transparent substrate 11 as a plane of symmetry are symmetrical. Although the example in which they are arranged so as to be shown is shown, the invention is not limited to such a form. For example, in FIG. 2B, the transparent substrate 11 has one surface 11a side having a configuration in which a metal layer 12 and a blackening layer 13 are laminated in that order, as in the configuration of FIG. 1A. The layers stacked above and below may be asymmetrical.

  Up to this point, the conductive substrate of the present embodiment has been described. However, in the conductive substrate of the present embodiment, since the metal layer and the blackening layer are provided on the transparent base material, the light on the surface of the metal layer is Can be suppressed.

  The degree of light reflection of the conductive substrate of the present embodiment is not particularly limited, for example, in order to suppress the wiring visibility in the display when used as a conductive substrate for a touch panel, reflection The lower the rate, the better. For example, the average reflectance (regular reflectance) of light having a wavelength of 400 nm or more and 700 nm or less is preferably 40% or less, more preferably 30% or less, and particularly preferably 20% or less.

  The reflectance can be measured by irradiating the blackened layer of the conductive substrate with light. Specifically, for example, when the metal layer 12 and the blackening layer 13 are sequentially stacked on the one surface 11a side of the transparent substrate 11 as shown in FIG. 1A, the blackening layer 13 is irradiated with light so that the blackening layer 13 is irradiated with light. Surface A can be measured by irradiating it with light. In the measurement, light having a wavelength of 400 nm or more and 700 nm or less is irradiated to the blackening layer 13 of the conductive substrate as described above at intervals of 1 nm, for example, and the average value of the measured values is the average of the reflectance of the conductive substrate. Can be

  As described above, the conductive substrate of this embodiment can be preferably used as a conductive substrate for a touch panel, for example. In this case, the conductive substrate can be configured to have mesh-shaped wiring.

  The conductive substrate provided with the mesh-shaped wiring can be obtained by etching the metal layer and the blackening layer of the conductive substrate of the present embodiment described so far.

  For example, a two-layered wiring can be used to form a mesh-shaped wiring. A specific configuration example is shown in FIG. FIG. 3 shows a view of the conductive substrate 30 provided with a mesh-shaped wiring as seen from the upper surface side in the stacking direction of the metal layer and the blackening layer.

  The conductive substrate 30 shown in FIG. 3 has a transparent base material 11, a plurality of wirings 31A parallel to the Y-axis direction in the figure, and wirings 31B parallel to the X-axis direction. The wirings 31A and 31B are formed by etching a metal layer, and a blackened layer (not shown) is formed on the upper surface and / or the lower surface of the wirings 31A and 31B. The blackened layer is etched into the same shape as the wirings 31A and 31B. The wiring 31B visible through the transparent base material 11 is also shown in the figure.

  The arrangement of the transparent base material 11 and the wirings 31A and 31B is not particularly limited. An example of the arrangement of the transparent base material 11 and the wiring is shown in FIGS. 4A and 4B. 4A and 4B correspond to cross-sectional views taken along the line AA ′ of FIG.

  First, as shown in FIG. 4A, wirings 31A and 31B may be arranged on the upper and lower surfaces of the transparent base material 11, respectively. In FIG. 4A, blackened layers 32A and 32B, which are etched into the same shape as the wiring, are arranged on the upper surface of the wiring 31A and the lower surface of the wiring 31B, respectively.

  Further, as shown in FIG. 4B, one set of transparent base materials 11 is used, wirings 31A and 31B are arranged on the upper and lower surfaces with one transparent base material 11 sandwiched, and one wiring 31B is a transparent base material. It may be arranged between 11. In this case as well, the blackened layers 32A and 32B etched in the same shape as the wirings are arranged on the upper surfaces of the wirings 31A and 31B. As described above, the arrangement of the blackened layer and the metal layer is not limited. Therefore, the arrangement of the blackening layers 32A and 32B and the wirings 31A and 31B can be reversed upside down in both cases of FIG. 4A and FIG. 4B. It is also possible to provide a plurality of blackening layers, for example, to further provide a blackening layer between the wirings 31A and 31B and the transparent base material 11.

  However, it is preferable that the blackening layer is arranged on the surface of the metal layer where light reflection is particularly desired to be suppressed. Therefore, in the conductive substrate shown in FIG. 4B, for example, when it is necessary to suppress reflection of light from the lower surface side in the drawing, the positions of the blackening layers 32A and 32B and the positions of the wirings 31A and 31B. It is preferable to reverse and. In addition to the blackened layers 32A and 32B, blackened layers may be further provided between the wirings 31A and 31B and the transparent base material 11, respectively.

  The conductive substrate having the mesh-shaped wiring shown in FIGS. 3 and 4A includes, for example, metal layers 12A and 12B and blackening layers 13A and 13B on both surfaces of the transparent substrate 11 as shown in FIG. 1B. It can be formed from a conductive substrate.

  The case of forming the conductive substrate of FIG. 1B will be described as an example. First, the metal layer 12A and the blackening layer 13A on the one surface 11a side of the transparent substrate 11 are parallel to the Y-axis direction in FIG. 1B. Etching is performed so that the plurality of linear patterns are arranged at a predetermined interval along the X-axis direction. The X-axis direction in FIG. 1B means a direction parallel to the width direction of each layer. Moreover, the Y-axis direction in FIG. 1B means a direction perpendicular to the paper surface of FIG. 1B.

  The metal layer 12B and the blackening layer 13B on the other surface 11b side of the transparent substrate 11 are arranged along the Y-axis direction with a plurality of linear patterns parallel to the X-axis direction in FIG. 1B at predetermined intervals. Etching is performed so as to be arranged.

  By the above operation, the conductive substrate having the mesh-shaped wiring shown in FIGS. 3 and 4A can be formed. It should be noted that both surfaces of the transparent base material 11 can be etched at the same time. That is, the metal layers 12A and 12B and the blackened layers 13A and 13B may be etched at the same time. In addition, in FIG. 4A, the conductive substrate having a blackened layer patterned in the same shape as the wirings 31A and 31B between the wirings 31A and 31B and the transparent base material 11 is the conductive substrate shown in FIG. 2B. It can be manufactured by similarly performing etching using.

  The conductive substrate having the mesh-shaped wiring shown in FIG. 3 can also be formed by using two conductive substrates shown in FIG. 1A or 2A. The case where two conductive substrates shown in FIG. 1A are formed will be described as an example. For each of the two conductive substrates shown in FIG. 1A, a plurality of metal layers 12 and a blackening layer 13 are provided in parallel with the X-axis direction. Etching is performed so that the linear patterns of are arranged along the Y-axis direction at a predetermined interval. Then, the two conductive substrates are attached so that the linear patterns formed on the respective conductive substrates by the above-described etching process intersect with each other so that the conductive substrates are provided with mesh-shaped wiring. be able to. The surfaces to be bonded when the two conductive substrates are bonded are not particularly limited. For example, the surface A in FIG. 1A on which the metal layer 12 or the like is laminated and the surface 11b in FIG. 1A on which the metal layer 12 or the like is not laminated may be bonded to each other so that the structure shown in FIG. 4B is obtained. it can.

  The blackened layer is preferably disposed on the surface of the metal layer where light reflection is particularly desired to be suppressed. Therefore, in the conductive substrate shown in FIG. 4B, when it is necessary to suppress the reflection of light from the lower surface side in the drawing, the positions of the blackening layers 32A and 32B and the positions of the wirings 31A and 31B are reversed. It is preferable to arrange them in In addition to the blackened layers 32A and 32B, a blackened layer may be further provided between the wirings 31A and 31B and the transparent base material 11.

  Alternatively, for example, the surfaces 11b in FIG. 1A on which the metal layer 12 of the transparent substrate 11 and the like are not laminated may be bonded to each other so that the cross section has the structure shown in FIG. 4A.

  The width of the wiring and the distance between the wirings in the conductive substrate having the mesh-shaped wiring shown in FIGS. 3, 4A, and 4B are not particularly limited. It can be selected accordingly.

  Further, although FIGS. 3 and 4 show an example in which linear wirings are combined to form a mesh wiring (wiring pattern), the invention is not limited to this form, and a wiring pattern is formed. The wiring can have any shape. For example, the shapes of the wirings that form the mesh-shaped wiring pattern may be various shapes such as jagged lines (zigzag straight lines) so that moire (interference fringes) do not occur with the image on the display.

The conductive substrate having the mesh-shaped wiring composed of the two layers of wiring as described above can be preferably used as a conductive substrate for a projected capacitive touch panel, for example.
(Method of manufacturing conductive substrate)
Next, a configuration example of the method of manufacturing the conductive substrate of the present embodiment will be described.

The manufacturing method of the conductive substrate of the present embodiment,
A metal layer forming step of forming a metal layer on at least one surface side of the transparent substrate,
And a blackening layer forming step of forming a blackening layer on at least one surface side of the transparent substrate.

  Then, in the blackened layer forming step, a blackened layer containing a simple substance and compound of copper and a simple substance and / or compound of nickel, and the copper compound forms a blackened layer containing copper oxide and copper hydroxide. Can be membrane.

Further, in the blackening layer forming step, when measured by X-ray photoelectron spectroscopy (XPS), the peak area of the copper oxide and the copper hydroxide obtained by using the Cu 2P _3/2 spectrum and the Cu LMM spectrum were measured. The blackened layer can be formed so that the peak area of the copper oxide is 40 or more and the peak area of the copper hydroxide is 60 or less when the sum of the peak areas of the products is 100.

  The method of manufacturing the conductive substrate of the present embodiment will be described below, but the conductive substrate described above can be preferably manufactured by the method of manufacturing the conductive substrate of the present embodiment. Therefore, except for the points described below, the configuration can be the same as that of the above-described conductive substrate, and thus the description thereof will be omitted.

  As described above, in the conductive substrate of this embodiment, the order of stacking the metal layer and the blackening layer on the transparent substrate is not particularly limited. Also, a plurality of metal layers and a plurality of blackening layers may be formed. Therefore, the order of performing the metal layer forming step and the blackening layer forming step and the number of times of performing are not particularly limited, and any number of times and timings according to the structure of the conductive substrate to be formed can be used. Can be implemented in.

  Hereinafter, each step will be described.

  First, the metal layer forming step will be described.

  In the metal layer forming step, the metal layer can be formed on at least one surface of the transparent substrate.

  The type of the transparent substrate used in the metal layer forming step or the blackening layer forming step is not particularly limited, but as described above, a resin substrate (resin film) or a glass substrate that transmits visible light. Etc. can be preferably used. The transparent substrate can be cut into any size in advance if necessary.

  The metal layer preferably has a metal thin film layer as described above. Further, the metal layer may have a metal thin film layer and a metal plating layer. Therefore, the metal layer forming step can include a step of forming the metal thin film layer by, for example, a dry plating method. The metal layer forming step includes a step of forming a metal thin film layer by a dry plating method, and a step of forming a metal plating layer by an electroplating method which is a kind of wet plating method using the metal thin film layer as a power feeding layer, May have.

  The dry plating method used in the step of forming the metal thin film layer is not particularly limited, and for example, a vapor deposition method, a sputtering method, an ion plating method or the like can be used. A vacuum vapor deposition method can be preferably used as the vapor deposition method. As the dry plating method used in the step of forming the metal thin film layer, it is more preferable to use the sputtering method because the film thickness can be easily controlled.

  The metal thin film layer can be suitably formed using, for example, a roll-to-roll sputtering device.

  The process of forming the metal thin film layer will be described below by taking the case of using a roll-to-roll sputtering device as an example.

  FIG. 5 shows a configuration example of the roll-to-roll sputtering apparatus 50.

  The roll-to-roll sputtering apparatus 50 includes a housing 51 that houses most of its components.

  The case 51 is provided with an unwinding roll 52 for supplying a base material for forming a metal thin film layer, a can roll 53, sputtering cathodes 54a to 54d, a winding roll 55, and the like. In addition to the above rolls, a guide roll, a heater 56, or the like may be optionally provided on the transport path of the base material on which the metal thin film layer is formed.

  Although the structure of the can roll 53 is not particularly limited, for example, the surface thereof is finished by hard chrome plating, and the refrigerant and the heating medium supplied from the outside of the casing 51 circulate inside the can roll 53 to adjust the temperature to a substantially constant temperature. It is preferably configured so that it can.

  The sputtering cathodes 54a to 54d are preferably magnetron cathode type and are arranged to face the can roll 53. The size of the sputtering cathodes 54a to 54d is not particularly limited, but the widthwise dimension of the base material on which the metal thin film layer of the sputtering cathodes 54a to 54d is formed may be wider than the width of the base material on which the metal thin film layer is formed. preferable.

  The base material on which the metal thin film layer is formed is conveyed in the roll-to-roll sputtering device 50 which is a roll-to-roll vacuum film forming device, and the metal thin film is formed by the sputtering cathodes 54a to 54d facing the can roll 53. A layer is deposited.

  When the metal thin film layer is formed by using the roll-to-roll sputtering device 50, targets corresponding to the composition to be formed are attached to the sputtering cathodes 54a to 54d. Then, after evacuating the inside of the apparatus in which the base material for forming the metal thin film layer is set on the unwinding roll 52 by the vacuum pumps 57a and 57b, the sputtering gas such as argon is introduced into the housing 51 by the gas supply means 58. can do. The configuration of the gas supply unit 58 is not particularly limited, but it may have a gas storage tank (not shown). Then, mass flow controllers (MFC) 581a and 581b and valves 582a and 582b are provided between the gas storage tank and the casing 51 for each gas type so that the supply amount of each gas into the casing 51 can be controlled. Can be configured to. Although FIG. 5 shows an example in which two sets of a mass flow controller and a valve are provided, the number to be installed is not particularly limited, and the number to be installed can be selected according to the number of gas species used. When the sputtering gas is supplied into the housing 51, the flow rate of the sputtering gas and the opening degree of the pressure adjusting valve 59 provided between the vacuum pump 57b and the housing 51 are adjusted to adjust the inside of the apparatus to, for example, 0. It is preferable to hold the film at 13 Pa or more and 1.3 Pa or less and perform the film formation.

  In this state, while the substrate is being conveyed from the unwinding roll 52 at a speed of 0.5 m to 10 m per minute, for example, power is supplied from the DC power source for sputtering connected to the sputtering cathodes 54a to 54d to perform sputtering discharge. Thereby, a desired metal thin film layer can be continuously formed on the substrate.

  The roll-to-roll sputtering apparatus 50 may be provided with any member other than the members described above. For example, as shown in FIG. 5, vacuum gauges 60a and 60b for measuring the degree of vacuum in the housing 51, vent valves 61a and 61b, and the like can be provided.

  Next, the step of forming the metal plating layer will be described. The conditions in the step of forming the metal plating layer by the wet plating method, that is, the conditions of the electroplating treatment are not particularly limited, and various conditions according to a conventional method may be adopted. For example, the metal plating layer can be formed by supplying the base material on which the metal thin film layer is formed to the plating tank containing the metal plating solution and controlling the current density and the transfer speed of the base material.

  Next, the blackened layer forming step will be described.

  As described above, the blackened layer forming step is a step of forming a blackened layer on at least one surface side of the transparent substrate. The means for forming the blackening layer is not particularly limited, but the sputtering method can be preferably used. According to the sputtering method, it is relatively easy to form a layer containing a simple substance and compound of copper and a simple substance and / or compound of nickel, and the compound of copper being copper oxide and copper hydroxide. This is because it can be formed.

  When the blackened layer is formed by the sputtering method, for example, the roll-to-roll sputtering device 50 described above can be used. The configuration of the roll-to-roll sputtering device has already been described, and thus the description thereof is omitted here.

  When the blackening layer is formed by using the roll-to-roll sputtering device 50, for example, an alloy target containing nickel and copper is attached to the sputtering cathodes 54a to 54d. Then, the inside of the apparatus in which the substrate for forming the blackening layer is set on the unwinding roll 52 is evacuated by the vacuum pumps 57a and 57b.

  After that, a sputtering gas containing oxygen gas and water vapor is introduced into the housing 51 by the gas supply means 58. At this time, the flow rate of the sputtering gas and the opening degree of the pressure adjusting valve 59 provided between the vacuum pump 57b and the housing 51 are adjusted to maintain the inside of the apparatus at, for example, 0.13 Pa or more and 13 Pa or less. It is preferred to carry out a membrane.

  In order to easily adjust the amounts of oxygen and water vapor supplied to the blackening layer, an inert gas, an oxygen gas, and water vapor are simultaneously supplied into the housing 51, and the partial pressures of the respective gases are adjusted. It is preferable. Therefore, the sputtering gas preferably contains an inert gas, an oxygen gas, and water vapor. The inert gas is not particularly limited, and argon or helium can be preferably used. Also, water vapor can be supplied as a mixed gas with an inert gas.

  The ratio of oxygen gas and water vapor in the sputtering gas is not particularly limited and can be selected according to the composition of the blackened layer to be formed and the like.

For example, when the formed blackened layer is measured by X-ray photoelectron spectroscopy (XPS), the peak area of the copper oxide and the copper hydroxide obtained by using the Cu 2P _3/2 spectrum and the Cu LMM spectrum are measured. It is preferable that the peak area of the copper oxide is 40 or more and the peak area of the copper hydroxide is 60 or less when the sum of the peak areas of the products is 100. Therefore, it is preferable to adjust the supply amount of each gas so that the measurement result of the formed blackened layer by the X-ray photoelectron spectroscopy has the above result.

  When forming the blackening layer, the copper oxide and the copper hydroxide in the blackening layer are, for example, in the desired range described above over the entire width direction of the conductive substrate. It is preferable to adjust the arrangement of the supply pipe.

  In this state, while carrying the substrate from the unwinding roll 52 at a speed of 0.5 m to 10 m per minute, for example, power is supplied from the DC power source for sputtering connected to the sputtering cathodes 54a to 54d to perform sputtering discharge. . Thereby, a desired blackened layer can be continuously formed on the substrate.

  Then, the conductive substrate obtained by the method for manufacturing a conductive substrate described here can be a conductive substrate having mesh-shaped wiring. In this case, in addition to the steps described above, it is possible to further include an etching step of forming a wiring by etching the metal layer and the blackened layer.

  In the etching process, for example, first, a resist having an opening corresponding to a portion to be removed by etching is formed on the outermost surface of the conductive substrate. In the case of the conductive substrate shown in FIG. 1A, a resist can be formed on the exposed surface A of the blackening layer 13 arranged on the conductive substrate. The method of forming the resist having the opening corresponding to the portion to be removed by etching is not particularly limited, but it can be formed by a method similar to the conventional technique such as photolithography.

  Then, the metal layer 12 and the blackening layer 13 can be etched by supplying an etching solution from the upper surface of the resist.

  In addition, when a metal layer and a blackening layer are arranged on both surfaces of the transparent substrate 11 as shown in FIG. 1B, a resist having openings of a predetermined shape is formed on the surfaces A and B of the conductive substrate, The metal layers 12A and 12B and the blackening layers 13A and 13B formed on both sides of the transparent substrate 11 may be simultaneously etched.

  Further, the metal layers 12A and 12B and the blackening layers 13A and 13B formed on both sides of the transparent substrate 11 may be subjected to etching treatment on each side. That is, for example, the metal layer 12B and the blackening layer 13B can be etched after the metal layer 12A and the blackening layer 13A are etched.

  Since the blackening layer formed on the conductive substrate of the present embodiment exhibits the same reactivity to the etching solution as the metal layer, the etching solution used in the etching step is not particularly limited, and generally the metal layer An etching solution used for etching can be preferably used. As the etching liquid, for example, a mixed aqueous solution of ferric chloride and hydrochloric acid can be more preferably used. The contents of ferric chloride and hydrochloric acid in the etching solution are not particularly limited, but for example, it is preferable that ferric chloride is contained in a proportion of 5% by weight or more and 50% by weight or less, and 10% by weight is preferable. More preferably, the content is 30% by weight or less. The etching solution preferably contains hydrochloric acid in a proportion of 1% by weight or more and 50% by weight or less, more preferably 1% by weight or more and 20% by weight or less. The balance can be water.

  The etching solution can be used at room temperature, but can also be used by heating to enhance the reactivity. For example, it can be used after being heated to 40 ° C. or higher and 50 ° C. or lower.

  Since the specific form of the mesh-shaped wiring obtained by the above-described etching process is as described above, the description thereof is omitted here.

  Further, as described above, two conductive substrates having a metal layer and a blackening layer are attached to one surface side of the transparent substrate 11 shown in FIGS. 1A and 2A to provide a mesh-like wiring. In the case of using a conductive substrate, a step of attaching the conductive substrates can be further provided. At this time, the method of bonding the two conductive substrates is not particularly limited, and they can be bonded using, for example, an adhesive.

  The conductive substrate and the method of manufacturing the conductive substrate according to this embodiment have been described above. According to such a conductive substrate, the blackened layer also has excellent reactivity with the etching liquid, and the metal layer and the blackened layer can exhibit substantially the same reactivity with the etching liquid. Therefore, when the metal layer and the blackening layer are simultaneously etched, the metal layer and the blackening layer can be patterned into a desired shape, and the occurrence of dimensional variation can be suppressed. Therefore, the metal layer and the blackening layer can be simultaneously etched.

  Further, the blackening layer can suppress the reflection of light by the metal layer, and when it is used as a conductive substrate for a touch panel, for example, it can suppress the reflection of light on the wiring surface and improve the visibility of the display. it can.

Specific examples and comparative examples will be described below, but the present invention is not limited to these examples.
(Evaluation methods)
The samples prepared in Examples and Comparative Examples were evaluated by the following methods.
(1) Measurement by X-ray photoelectron spectroscopy (XPS) The measurement was performed by an X-ray photoelectron spectrometer (manufactured by PHI, model: QuantaSXM). Monochromatic Al (1486.6 eV) was used as the X-ray source.

As described below, in each of the following examples and comparative examples, a conductive substrate having the structure of FIG. 2A was manufactured. Therefore, the surface 132a exposed to the outside of the second blackened layer 132 in FIG. 2A was subjected to Ar ion etching, and the Cu 2P _3/2 spectrum and the Cu LMM spectrum within 10 nm from the outermost surface were measured. The peak area of the copper oxide and the peak area of the copper hydroxide were calculated from the obtained spectrum when the sum of the peak areas of the copper oxide and the peak area of the copper hydroxide was 100. That is, the peak area ratio of copper oxide and the peak area ratio of copper hydroxide for copper oxide and copper hydroxide were calculated.
(2) Reflectance measurement The measurement is carried out by a spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2600) by the specular reflection method with an incident angle of 5 ° to obtain the average reflectance of light in the wavelength range of 400 nm to 700 nm. It was Specifically, for light in the wavelength range of 400 nm to 700 nm, the specular reflectance at each wavelength is measured by irradiating the light with the wavelength changed at 1 nm intervals, and the average of the specular reflectance is reflected for light having a wavelength of 400 nm to 700 nm. The average of the rates. In Table 1, the reflectance is simply described.

In each of the following examples and comparative examples, a conductive substrate having the structure of FIG. 2A is manufactured. Therefore, the reflectance of the surface 132a exposed to the outside of the second blackening layer 132 in FIG. 2A was measured.
(3) Etching test In the etching test, an etching solution containing 10% by weight of ferric chloride, 1% by weight of hydrochloric acid and the balance of water was used.

  The conductive substrate produced in each of the examples and comparative examples was immersed in an etching solution at a temperature of 25 ° C. for 60 seconds without forming a resist or the like, and then taken out of the etching solution. Then, after that, the etching liquid adhering to the conductive substrate was sufficiently washed off by washing with water.

  The conductive substrate after being immersed in the etching solution and washed with water was visually observed to observe the presence or absence of the metal layer and the blackened layer remaining on the transparent substrate.

When the metal layer and the blackening layer do not remain, that is, when the residue cannot be confirmed, it indicates that the conductive substrate is provided with the metal layer and the blackening layer that can be simultaneously etched. On the other hand, when at least one of the metal layer and the blackened layer remains, that is, when the residue can be confirmed, it indicates that the deposited metal layer and the blackened layer cannot be simultaneously etched. .
(Sample preparation conditions)
As examples and comparative examples, conductive substrates were prepared under the conditions described below and evaluated by the above-described evaluation method.
[Example 1]
A conductive substrate having the structure shown in FIG. 2A was produced.
(Blackening layer forming step)
First, a long transparent substrate made of polyethylene terephthalate resin (PET) having a width of 500 mm and a thickness of 100 μm was set on the unwinding roll 52 of the roll-to-roll sputtering apparatus 50 shown in FIG. The total light transmittance of the transparent base material made of polyethylene terephthalate resin used as the transparent base material was 97% when evaluated by the method specified in JIS K7361-1.

  A nickel-copper alloy target containing 65 wt% nickel and 35 wt% copper was set on the sputtering cathodes 54a to 54d.

  Next, the heater 56 of the roll-to-roll sputtering apparatus 50 was heated to 100 ° C. to heat the transparent base material to remove water contained in the base material.

Then, after exhausting the inside of the housing 51 to 1 × 10 ⁻⁴ Pa, argon gas, oxygen gas, and water vapor were introduced into the housing 51. Water vapor is introduced as argon gas containing saturated water at room temperature. Argon gas, oxygen gas, and argon gas containing water (argon / water mixed gas) are supplied into the housing 51 so that the supply amounts shown in Table 1 are obtained, and the pressure inside the housing 51 is set to 2 Pa. It was adjusted.

  Then, while the transparent base material is being conveyed from the unwinding roll 52 at a speed of 2 m / min, electric power is supplied from a sputtering DC power source connected to the sputtering cathodes 54a to 54d to carry out sputtering discharge, and the transparent base material is transferred onto the transparent base material. A blackened layer was continuously formed. By such an operation, the first blackened layer 131 was formed on the transparent substrate so as to have a thickness of 20 nm.

When forming the first blackening layer, a nickel-copper alloy target was used as described above, and argon gas, oxygen gas, and water vapor were introduced into the housing 51, and sputtering was performed. Therefore, the first blackened layer contains a simple substance and compound of copper and a simple substance and / or compound of nickel.
(Metal layer forming step)
Subsequently, the transparent base material on which the first blackened layer was formed was set on the unwinding roll 52, and the targets set on the sputtering cathodes 54a to 54d were changed to copper targets. Then, after exhausting the inside of the casing 51 of the roll-to-roll sputtering device 50 to 1 × 10 ⁻⁴ Pa, only argon gas was introduced into the casing 51, and the pressure was adjusted to 0.3 Pa. A copper thin film layer was formed as a metal thin film layer on the upper surface of the first blackened layer so as to have a thickness of 80 nm in the same manner as the first blackened layer except for the above points.

After forming the copper thin film layer, a copper plating layer having a thickness of 0.5 μm was further formed by an electrolytic plating method. When forming the copper plating layer, the copper thin film layer was used as the power feeding layer.
(Blackening layer forming step)
Then, the transparent base material on which the first blackening layer and the metal layer are formed is set on the unwinding roll 52, and the second black film is formed on the upper surface of the metal layer 12 under the same conditions as the first blackening layer 131. The conversion layer 132 was formed.

The above-mentioned sample of the conductive substrate was evaluated by the above-mentioned measurement by X-ray photoelectron spectroscopy (XPS), reflectance measurement, and etching test. The results are shown in Table 1.
[Examples 2 to 4]
When forming the first blackened layer and the second blackened layer, the flow rates of the argon gas, the oxygen gas, and the argon gas containing water (argon / moisture mixed gas) supplied to the inside of the housing 51 are changed. A conductive substrate was prepared and evaluated in the same manner as in Example 1 except that the values shown in Table 1 were used.

The results are shown in Table 1.
[Comparative Example 1 and Comparative Example 2]
When forming the first blackened layer and the second blackened layer, the flow rates of the argon gas, the oxygen gas, and the argon gas containing water (argon / moisture mixed gas) supplied to the inside of the housing 51 are changed. A conductive substrate was prepared and evaluated in the same manner as in Example 1 except that the values shown in Table 1 were used.

  The results are shown in Table 1.

表１に示した結果によると、実施例１〜実施例４の試料において、黒化層をＸＰＳにより評価を行ったところ、銅単体、および銅酸化物、銅水酸化物のピークが確認され、各成分を含有することが確認できた。

According to the results shown in Table 1, in the samples of Examples 1 to 4, when the blackened layer was evaluated by XPS, the peaks of copper simple substance, copper oxide, and copper hydroxide were confirmed, It was confirmed that each component was contained.

  Further, in the samples of Examples 1 to 4, the peak area ratio of the copper oxide is 40 or more and the peak area ratio of the copper hydroxide is 60 or less, which are obtained from the results of measurement of the blackened layer by XPS. It was confirmed that it was within the range.

  As a result of the etching test, it was confirmed that there was no residue.

  Further, in Examples 1 to 4, the average reflectance of light having a wavelength of 400 nm or more and 700 nm or less is 40.0% or less, and the blackening layer sufficiently suppresses the reflection of light on the surface of the metal layer. I was able to confirm that it was done.

  On the other hand, in the samples of Comparative Examples 1 and 2, when the blackened layer was evaluated by XPS, peaks of copper simple substance, copper oxide, and copper hydroxide were confirmed, and each component was contained. I was able to confirm that.

  However, regarding the blackened layer, the peak area ratios of the copper oxides were 39 and 30 which were less than 40, and the peak area ratios of the copper hydroxide were 61, 70 and 60, which were determined from the results of measurement by XPS. It was confirmed to exceed.

  Then, when the etching test was carried out, the residue of the blackened layer was recognized on the PET film. That is, it was confirmed that the blackened layer formed of the conductive substrates of Comparative Examples 1 and 2 had low reactivity with the etching solution, and the blackened layer and the metal layer could not be simultaneously etched.

  As described above, the blackened layer contains the simple substance of copper, the copper oxide, and the copper hydroxide, and the simple substance of nickel and / or the compound, and is calculated from the measurement result by XPS. It was confirmed that when the peak area ratio of the hydroxide was within the predetermined range, it showed good reactivity with the etching solution. That is, it was confirmed that the blackened layer and the metal layer can be simultaneously etched.

  Although the conductive substrate has been described in the above embodiments and examples, the present invention is not limited to the above embodiments and examples. Various modifications and changes can be made within the scope of the gist of the present invention described in the claims.

  This application claims priority based on Japanese Patent Application No. 2015-195199 filed with the Japan Patent Office on September 30, 2015, and the entire content of Japanese Patent Application No. 2015-195199 is applied to the present international application. Incorporate.

10A, 10B, 20A, 20B, 30 Conductive substrate 11 Transparent base materials 12, 12A, 12B Metal layers 13, 13A, 13B, 131, 132, 131A, 131B, 132A, 132B, 32A, 32B Blackening layers 31A, 31B wiring

Claims (7)

A transparent substrate,
A metal layer formed on at least one surface of the transparent substrate,
And a blackening layer formed on at least one surface of the transparent substrate,
The blackened layer contains a simple substance and compound of copper and a simple substance and / or compound of nickel,
The copper compound contains copper oxide and copper hydroxide,
When the blackened layer was measured by X-ray photoelectron spectroscopy,
The peak area of the copper oxide is 40 or more when the sum of the peak area of the copper oxide and the peak area of the copper hydroxide, which are obtained by using the Cu 2P _3/2 spectrum and the Cu LMM spectrum, is 100 or more. A conductive substrate having a peak area of the copper hydroxide of 60 or less.   The conductive substrate according to claim 1, wherein the metal layer contains copper.   The conductive substrate according to claim 1 or 2, wherein the metal layer and the blackening layer are formed in this order on at least one surface of the transparent substrate from the transparent substrate side.   The conductive substrate according to claim 1, wherein the blackening layer, the metal layer, and the blackening layer are formed in this order on at least one surface of the transparent base material from the transparent base material side. .   The conductive substrate according to claim 1, wherein the blackened layer has a thickness of 100 nm or less.   The conductive substrate according to claim 1, wherein an average reflectance of light having a wavelength of 400 nm or more and 700 nm or less is 40% or less.   The conductive substrate according to claim 1, further comprising a mesh-shaped wiring.

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