KR100332476B1 - 산화물 소결체 스팟터링 타겟트 조립체 - Google Patents

산화물 소결체 스팟터링 타겟트 조립체 Download PDF

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Publication number
KR100332476B1
KR100332476B1 KR1020007005995A KR20007005995A KR100332476B1 KR 100332476 B1 KR100332476 B1 KR 100332476B1 KR 1020007005995 A KR1020007005995 A KR 1020007005995A KR 20007005995 A KR20007005995 A KR 20007005995A KR 100332476 B1 KR100332476 B1 KR 100332476B1
Authority
KR
South Korea
Prior art keywords
target
oxide sintered
spottering
target assembly
thick
Prior art date
Application number
KR1020007005995A
Other languages
English (en)
Korean (ko)
Other versions
KR20010032706A (ko
Inventor
이시즈카케이이치
Original Assignee
야마모토 기미찌
가부시키 가이샤 닛코 마테리알즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마모토 기미찌, 가부시키 가이샤 닛코 마테리알즈 filed Critical 야마모토 기미찌
Publication of KR20010032706A publication Critical patent/KR20010032706A/ko
Application granted granted Critical
Publication of KR100332476B1 publication Critical patent/KR100332476B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020007005995A 1998-10-06 1999-09-28 산화물 소결체 스팟터링 타겟트 조립체 KR100332476B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10297571A JP3076311B2 (ja) 1998-10-06 1998-10-06 酸化物焼結体スパッタリングターゲット組立体
JP10-297571 1998-10-06
PCT/JP1999/005274 WO2000020654A1 (fr) 1998-10-06 1999-09-28 Corps de cible de pulverisation realise par frittage d'oxyde

Publications (2)

Publication Number Publication Date
KR20010032706A KR20010032706A (ko) 2001-04-25
KR100332476B1 true KR100332476B1 (ko) 2002-04-13

Family

ID=17848284

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007005995A KR100332476B1 (ko) 1998-10-06 1999-09-28 산화물 소결체 스팟터링 타겟트 조립체

Country Status (5)

Country Link
JP (1) JP3076311B2 (ja)
KR (1) KR100332476B1 (ja)
CN (1) CN1238552C (ja)
TW (1) TW448237B (ja)
WO (1) WO2000020654A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020069603A (ko) * 2001-02-27 2002-09-05 임조섭 마그네트론 스퍼터링 장치용 스퍼터링 타겟
JP2003264307A (ja) * 2002-03-11 2003-09-19 Sharp Corp 薄膜太陽電池及びその製造方法
KR100753328B1 (ko) * 2003-03-04 2007-08-29 닛코킨조쿠 가부시키가이샤 스퍼터링 타겟트, 광 정보기록 매체용 박막 및 그 제조방법
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles
JP4882332B2 (ja) * 2005-10-11 2012-02-22 大日本印刷株式会社 スパッタ装置
DE102006009749A1 (de) * 2006-03-02 2007-09-06 FNE Forschungsinstitut für Nichteisen-Metalle Freiberg GmbH Targetanordnung
JP2009127125A (ja) * 2007-11-28 2009-06-11 Mitsui Mining & Smelting Co Ltd スパッタリングターゲット材およびこれから得られるスパッタリングターゲット
CN202322993U (zh) * 2011-11-21 2012-07-11 深圳市华星光电技术有限公司 透明导电层的溅射靶材构造
CN104532198A (zh) * 2014-12-16 2015-04-22 张家港市铭斯特光电科技有限公司 一种磁控溅射镀膜用阴极
CN105734508B (zh) * 2016-04-08 2019-08-16 有研亿金新材料有限公司 一种氧化物靶材及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4428816A (en) * 1983-05-25 1984-01-31 Materials Research Corporation Focusing magnetron sputtering apparatus
JP2720755B2 (ja) * 1993-04-23 1998-03-04 三菱マテリアル株式会社 マグネトロンスパッタリング用Ｔｉターゲット材
JP2917743B2 (ja) * 1993-04-23 1999-07-12 三菱マテリアル株式会社 マグネトロンスパッタリング用Ｓｉターゲット材
JPH08176809A (ja) * 1994-12-21 1996-07-09 Asahi Glass Co Ltd スパッタリング用ターゲットおよびその再利用方法
JPH09111445A (ja) * 1995-10-12 1997-04-28 Dainippon Printing Co Ltd スパッタリングターゲット

Also Published As

Publication number Publication date
CN1238552C (zh) 2006-01-25
CN1287578A (zh) 2001-03-14
JP2000119847A (ja) 2000-04-25
KR20010032706A (ko) 2001-04-25
TW448237B (en) 2001-08-01
JP3076311B2 (ja) 2000-08-14
WO2000020654A1 (fr) 2000-04-13

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