WO1999034255A1 - Procede et appareil de fabrication de photomasque et procede de fabrication de l'appareil - Google Patents
Procede et appareil de fabrication de photomasque et procede de fabrication de l'appareil Download PDFInfo
- Publication number
- WO1999034255A1 WO1999034255A1 PCT/JP1998/005912 JP9805912W WO9934255A1 WO 1999034255 A1 WO1999034255 A1 WO 1999034255A1 JP 9805912 W JP9805912 W JP 9805912W WO 9934255 A1 WO9934255 A1 WO 9934255A1
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- WIPO (PCT)
- Prior art keywords
- pattern
- photomask
- parent
- substrate
- mask
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
- G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
Definitions
- the present invention relates to a photomask used as an original pattern when a microphone opening device such as a semiconductor integrated circuit, an image pickup device (CCD or the like), a liquid crystal display device, or a thin film magnetic head is manufactured using lithography technology.
- the present invention relates to a method and an apparatus for producing the same. Furthermore, the present invention relates to a device manufacturing method using such a photomask manufacturing method.
- a circuit pattern to be formed is used, for example, using a photomask on which an original pattern that is enlarged about 4 to 5 times is formed.
- a transfer method of reducing and projecting onto a substrate to be exposed such as a wafer or a glass plate through a system is used.
- An exposure apparatus is used to transfer such a photomask pattern.
- a photomask used in a step-and-repeat type reduction projection exposure apparatus is also called a reticle.
- such photomasks have been manufactured by drawing an original pattern on a predetermined substrate (blanks) using an electron beam drawing apparatus or a laser beam drawing apparatus. That is, after forming a mask material (light shielding film) on the substrate and applying a resist, the original pattern is drawn using an electron beam drawing apparatus or a laser beam drawing apparatus. After that, the resist was developed and an etching process was performed, so that the original pattern was formed by the mask material.
- the reduction magnification of the reduction projection type exposure apparatus using the photomask is doubled, the original pattern drawn on the photomask may be a pattern obtained by enlarging the device pattern by a factor of? The drawing error by the device is reduced almost twice on the device.
- the solution by the drawing device 5 Device patterns can be formed with approximately 1 /? Times the resolution.
- an original pattern of a photomask has been drawn by an electron beam drawing apparatus or a laser beam drawing apparatus. These drawing apparatuses draw the original pattern directly based on drawing data from a control computer.
- the original pattern of the photomask required for the exposure has also become larger and smaller.
- a photomask a reticle provided with a correction pattern for preventing unnecessary pattern transfer for double exposure, a so-called phase shift reticle provided with a phase shifter between adjacent patterns, and the like.
- these special photomasks may be used, the amount of pattern writing tends to be larger than other photomasks. As a result, the amount of drawing data required by a drawing apparatus for manufacturing a photomask is enormous.
- the writing time required to write an original pattern of one photomask by the writing apparatus has recently reached 10 to 24 hours. Such prolonged writing time contributes to an increase in photomask manufacturing costs.
- a laser beam lithography system draws an original pattern using a laser beam in the ultraviolet region, and can use a resist that can obtain a higher resolution than an electron beam lithography system, and has no proximity effect due to scattering.
- the resolution of laser beam lithography systems is inferior to electron beam lithography systems.
- the amount of drawing data is enormous, making data processing difficult and drawing time extremely long. Therefore, the required drawing accuracy may not be obtained due to drift of the drawing position.
- the market trend of the semiconductor integrated circuit has been shifting to a high-mix low-volume production-type device called an ASIC (Application Specific IC) or a system LSI.
- ASIC Application Specific IC
- system LSI system LSI
- the required delivery time from ordering to delivery of such a device is becoming extremely short, so when manufacturing such a device, the first step is to create a photo pattern on which the original pattern for manufacturing the device is formed.
- the mask (working reticle) must be manufactured in a short time, and the device must be manufactured in a short time using this photomask.
- the number of photomasks required is the same as the number of exposure steps even if only one type of device is manufactured.
- the above-described laser beam drawing apparatus or electron beam drawing The processing power of the equipment per unit time is low, and it may take more than a day to write one photomask. Therefore, conventionally, it takes a very long time as a whole to draw the original pattern of all the photomasks used to manufacture one type of device, and shortens the manufacturing time of one type of device It was difficult.
- a first object of the present invention is to provide a method for manufacturing a photomask capable of forming an original pattern with high accuracy and in a short time.
- the present invention provides a method for manufacturing a photomask capable of substantially correcting the image forming characteristic when a predetermined image forming characteristic of a projected image of a projection exposure apparatus using a photomask is deteriorated.
- the second purpose is to provide.
- the present invention provides a method of manufacturing a photomask, which includes using a projection exposure apparatus, wherein when a predetermined imaging characteristic of a projection optical system used therein is deteriorated, the imaging characteristic is substantially reduced. It is a third object of the present invention to provide a method of manufacturing a photomask which can correct the photomask in a short time.
- a fourth object of the present invention is to provide a method for manufacturing a photomask which can manufacture a photomask which can be used for manufacturing a variety of small-quantity devices such as ASICs and system LSIs in a short time and at low cost.
- a fifth object of the present invention is to provide a manufacturing apparatus capable of performing such a method for manufacturing a photomask.
- a sixth object of the present invention is to provide a method for manufacturing a device which can form a pattern of the device with higher accuracy by using such a method for manufacturing a photomask.
- the first method for manufacturing a photomask according to the present invention includes a method for manufacturing a photomask (34) having a transfer pattern (27) formed thereon, the method comprising: 27
- the pattern obtained by enlarging 7) is divided into a plurality of patterns of parent masks (R1 to RN), and a plurality of patterns of parent masks (R1 to RN) are formed on the surface of a photomask substrate (4). These images are sequentially transferred while performing screen splicing.
- a photomask when a photomask is manufactured, for example, a thin film of a mask material is formed on a substrate (4) of the photomask, and a photosensitive material such as a photoresist is applied thereon. . Then, using a step-and-repeat method or a step-and-scan method, a reduced image of a plurality of parent mask patterns is transferred onto the photosensitive material using, for example, an optical reduction projection type exposure apparatus. After that, the photosensitive material is developed. Then, by performing etching or the like using the pattern of the remaining photosensitive material as a mask, a desired transfer pattern (original pattern) is formed.
- the pattern of each parent mask can be drawn with high precision in a short time and with a small drift using, for example, a conventional electron beam drawing apparatus or laser beam drawing apparatus. Also, the writing error by the writing apparatus is reduced to 1 / line on the photomask, so that the accuracy of the original pattern is further improved. Change Once the parent masks have been manufactured, the pattern of the parent masks can be transferred onto the photomask substrate at high speed by a step-and-repeat method. In this case, the manufacturing time can be greatly reduced as compared with the conventional method of drawing individually with a drawing apparatus.
- the phrase “screen joint” in this specification should be transferred to a photomask by dividing one pattern into a plurality of parent masks and joining the projection images by these parent masks together. Not only to complete one pattern, but also to form a plurality of parent masks without dividing one pattern and connect the projected images of these parent masks to complete a photomask with multiple patterns It also includes the intention to make it happen.
- the term “screen connection” is used simply to connect the projection images of the parent mask, regardless of whether a single pattern is formed by connecting screens.
- a parent mask is divided into a plurality of parent masks and a plurality of parent masks so that each of the patterns is not divided.
- the shape (size) of the parent mask can be unified, and in the latter case, there is an advantage that there is no joint such as pattern failure and no defect such as joint failure.
- a second method for manufacturing a photomask according to the present invention is a method for manufacturing a photomask (34) in which a pattern for transfer is formed, wherein the pattern for transfer (27) or the enlarged pattern (27) 36) is divided into N sets (N is an integer of 2 or more) of a plurality of parent mask patterns (R1 to RN, Q1 to QN), and the pattern is applied to the surface of the photomask substrate (4).
- the images of the N sets of parent mask patterns are successively superimposed and transferred while screen joining is performed.
- a photomask when a photomask is manufactured, for example, a thin film of a mask material is formed on a substrate (4) of the photomask, and a photosensitive material such as a photoresist is applied thereon. . Then, using a step-and-repeat method or a step-and-scan method, for example, using an optical reduction projection type exposure apparatus, the image of the pattern of the N sets of a plurality of parent masks is formed on the photosensitive material. After the superimposed or reduced images are transferred, the photosensitive material is developed. Then, of the remaining photosensitive material By performing etching or the like using the pattern as a mask, a desired transfer pattern (original pattern) is formed.
- a desired transfer pattern original pattern
- the transfer patterns (original master) on the photomask are used.
- the line width error and the position error of the pattern can be greatly reduced.
- the pattern of the parent masks can be transferred onto the photomask substrate at high speed by a step-and-repeat method or the like. In this case, the manufacturing time can be greatly reduced as compared with the conventional method of drawing individually with a drawing apparatus.
- the transfer pattern (27) is magnified twice, and the enlarged parent pattern (36) is enlarged. Is divided vertically and horizontally into a set of parent mask patterns, for example, X rows. Similarly, the pattern of the parent mask of the other set is a pattern obtained by dividing the expanded parent pattern (36).
- the drawing data of the pattern of the master mask is reduced to about 1 / Fei second conventional, the minimum line width is conventional non times.
- the pattern of each parent mask can be drawn with high precision in a short time and with a small amount of drift using, for example, a conventional electron beam drawing apparatus or laser beam drawing apparatus. Also, the writing error by the writing apparatus is reduced to 1 / line on the photomask, so that the accuracy of the original pattern is further improved.
- an example of the patterns of the N sets of a plurality of parent masks is a transfer pattern or a plurality of patterns obtained by dividing this enlarged pattern in the same arrangement.
- At least one set of the plurality of parent mask patterns (BII to: B126) out of the N sets of the plurality of parent mask patterns is replaced with another predetermined one set of the plurality of parent mask patterns. It is desirable to make the pattern (PI1 to PI26) and the division method different. If the division method is changed in this way, the pattern images that are multiple-exposed on the photomask substrate will be located at different positions in the exposure area of the projection optical system that projects the pattern image of the parent mask. Multiple exposure is performed. Therefore, the distortion of the projection optical system and the exposure The error of the transfer line width uniformity due to the position in the optical area is averaged, and the accuracy of the pattern of the photomask is improved.
- At least one set of the plurality of parent mask patterns out of the N sets of the plurality of parent mask patterns should include a joint region of another predetermined one set of the plurality of parent mask patterns. Is desirable. As a result, splice errors during exposure while splicing screens are averaged and reduced.
- a third method for manufacturing a photomask according to the present invention is the method for manufacturing a photomask having a device pattern, wherein one of the plurality of divided patterns (P1 to PN) of the device pattern is mask substrate (4).
- the other divided pattern (A1 to AN), which is at least partially identical to the one divided pattern, is transferred onto the mask substrate (4) so that the same portion overlaps.
- these divided patterns are to be drawn by an electron beam drawing apparatus or the like, the drawing errors of the two divided patterns are averaged by overlapping and exposing the two divided patterns.
- the accuracy of the device pattern is improved.
- those division patterns can be used repeatedly by a step-and-repeat method, a large number of photomasks can be manufactured at high speed.
- each of the plurality of divided patterns is exposed by a light beam, and the reduced images are connected and transferred onto a predetermined mask substrate (4).
- This reduced projection reduces the drawing error of those divided patterns on the photomask, thereby improving the accuracy of the device pattern.
- the photomask when sequentially transferring the reduced images of the patterns of a plurality of parent masks (R1 to RN) onto the surface of the substrate (4), they are collectively selected according to the use of the photomask (the type of exposure apparatus used, etc.) It is desirable to use an exposure-type reduction projection exposure apparatus or a scanning exposure-type reduction projection exposure apparatus. For example, if the photomask is used in a scanning exposure type reduction projection exposure apparatus such as the step-and-scan method, a parallelogram-shaped distortion (so-called skew error) may occur in the projected image. .
- the skew error is difficult to correct in the batch exposure type, when transferring the pattern of a plurality of parent masks onto the substrate of the photomask, the skew error is corrected using a scanning exposure type projection exposure apparatus.
- the photo Since distortion when using a mask can be reduced, overlay errors and the like are reduced.
- the projection optics of the projection exposure apparatus using the photomasks are used.
- the pattern image of each parent mask is transferred while screen joining is performed on the substrate of the photomask.
- the transfer position, magnification, distortion, etc. of the pattern image of each parent mask so as to offset the variation in the imaging characteristics, the exposure is finally performed using the photomask.
- the device pattern distortion and the like are reduced, and the overlay accuracy and the like are improved.
- the photomask is desirably further used in reduced projection.
- the photomask is used for, for example, a double reduction (?
- a part of the parent mask (divided pattern) is used as a phase shift reticle, etc. It is desirable to optimize the imaging characteristics for each parent mask.
- a fourth method of manufacturing a photomask according to the present invention is directed to a method of manufacturing a photomask (WR) having a predetermined transfer circuit pattern, wherein one of the transfer circuit patterns includes: Alternatively, a parent mask (MR1) in which a predetermined pattern including one or a plurality of pattern units (Pa, PB, Pc) respectively corresponding to a plurality of circuit blocks is formed, and the photomask ( The projection image of the pattern unit selected from the pattern of the parent mask (MR1) is transferred onto the substrate (50) for WR) in a predetermined positional relationship.
- the transfer pattern (working reticle pattern) of each of these devices is not completely different for each product type, and different devices have a common CPU block and RAM block and other circuit blocks. Often do.
- devices of different types that do not have a CPU section or a RAM section are smaller than the CPU section, but have some common circuit blocks (small-scale circuit units). Is common.
- a pattern unit corresponding to a predetermined circuit block in a pattern to be formed on the photomask is formed on the parent mask (master reticle). Then, a mask material is formed on the substrate (50) of the photomask, a photosensitive material is applied thereon, and a corresponding pattern in the parent mask is formed at a position on the substrate where the circuit work is to be formed. After transferring the projected image of the evening unit and transferring or drawing the corresponding pattern to other parts, development of the photosensitive material and etching using the remaining photosensitive material as a mask are performed. This allows the photomask to be manufactured in a short time and thus at low cost.
- the circuit block corresponds to, for example, any of a CPU core unit, a RAM unit, a ROM unit, or a standard circuit block for a standard cell in an integrated circuit.
- AS ICs and the like often include a CPU core unit or a RAM unit in common, so that the parent mask according to the present invention can be used for many types of devices. It can be used in common when manufacturing photomasks (working reticles) used in manufacturing 5 ⁇ , and the manufacturing cost of each device can be reduced.
- a plurality of parent masks in which different pattern units (Pa, Pf) corresponding to different circuit blocks in the transfer circuit pattern are formed as the parent mask. It is preferable that a projected image of the pattern unit selected from the plurality of parent mask patterns be sequentially transferred to the photomask substrate (50) in a predetermined positional relationship.
- the parent mask (MR 1) is desirably used when manufacturing a plurality of types of photomasks (WR, WR 1). As a result, the manufacturing period of each photomask can be shortened, and the manufacturing cost can be reduced.
- the block pattern is formed by exposing and transferring the pattern unit of the existing parent mask, and the number of pattern units that need to be drawn on the new parent mask can be reduced. This significantly reduces the manufacturing time and cost of photomasks for other devices.
- a reduced image of the pattern unit of the parent mask be transferred to the substrate (50) for the photomask, and that the photomask be further used for reduced projection.
- the drawing error of the parent mask pattern on the photomask is also one. / I'll get you.
- a writing apparatus such as a laser beam writing apparatus having a higher throughput than an electron beam writing apparatus can be used.
- the photomask is used for further reduction projection, the influence of drawing errors of the pattern of the parent mask is further reduced, and a finer device can be manufactured with high precision.
- the pattern mask of the parent mask is formed on the photomask substrate (50).
- a part of the transfer circuit pattern may be drawn using an exposure beam focused on a predetermined spot.
- a basic pattern unit may be connected, and wiring or a small pattern peculiar to each device may be mixed. It may be cumbersome to manufacture a mask provided with such a wiring or a small-scale pattern as a new pattern unit. In such a case, by forming only the wiring or the small-sized pattern by drawing with a laser beam or the like, the manufacturing time of various photomasks can be reduced, and the manufacturing cost can be reduced.
- the photomask manufacturing apparatus includes a mask storage device (16 to 18) for storing a plurality of masks (R1 to RN) and one mask selected from the mask storage device.
- Mask stage (2) a projection optical system (3) that projects a reduced image of the mask pattern on the mask stage onto a photomask substrate (4), and light from the projection optical system
- the substrate stage (6) which is positioned on a plane perpendicular to the axis, and the masks on the mask stage (2) and the masks on the mask stage (2) in order to screen the reduced images of the patterns of the multiple masks on the substrate
- an alignment system (14A, 14B) for positioning with the substrate on the substrate stage (6).
- the photomask manufacturing method of the present invention can be implemented.
- the mask storage device includes a plurality of parent masks (R1 to RN) each having a pattern obtained by dividing a pattern obtained by enlarging a pattern (27) of a photomask to be manufactured. Is stored. As a result, the parent masks are exchanged at a high speed, and the exposure can be performed in a short time.
- the photomask manufacturing apparatus selects a pattern having a predetermined shape at an arbitrary position in the pattern of the mask, and reduces a reduced image of the selected pattern by the projection optical system to a photomask substrate.
- It has a visual field selection system (104) that projects onto it, and the alignment system (109A, 109B, FM1) places the reduced image selected by the visual field selection system on a predetermined position on the substrate. It is desirable to perform alignment between the mask and the substrate on the substrate stage in order to transfer in relation.
- the manufacturing equipment is equipped with an exposure beam irradiation system (LA1, A Ml, 121, 120) that irradiates a spot-shaped exposure beam (laser beam, electron beam, etc.) onto a desired part on the substrate. ) Is desirable. Circuit patterns, such as wiring, that do not fit with the transfer from the mask can be easily formed by drawing an exposure beam. Further, in the device manufacturing method according to the present invention, in the device manufacturing method for forming a predetermined pattern on a substrate (W), a second pattern obtained by further expanding the first pattern (27) obtained by expanding the predetermined pattern is used.
- a photomask (34) for actual exposure on which the first pattern (27) is formed is manufactured, and a reduced image of the pattern of the photomask for actual exposure is transferred onto the substrate (W).
- the magnification from the device pattern formed on the substrate (W) to the first pattern (27) is multiplied by /? (Where?
- the parent mask divides the second pattern (36) into multiple sets (P 1 to PN, Q 1 to QN) each of which is a set ( ⁇ is an integer of 2 or more).
- the actual pattern in which the first pattern (27) is formed by superimposing and reducing and projecting N sets of patterns of a plurality of parent masks onto a predetermined substrate (4) while successively performing screen splicing. It is preferable to manufacture the photomask (34).
- the predetermined circuit pattern is enlarged.
- a pattern unit (P a) corresponding to at least one circuit block in the first circuit pattern is formed on a parent mask (MR 1), and the pattern unit of the parent mask is placed in a predetermined positional relationship.
- a photomask (MR) for actual exposure on which the first circuit pattern is formed by transferring the photomask onto a predetermined substrate (50) is manufactured, and a reduced image of the pattern of the actual photomask is printed on a device. Is transferred onto the substrate (W).
- the photomask for actual exposure can be manufactured in a short time and with high accuracy, the device can be manufactured in a short time and with high accuracy.
- FIG. 1 is a diagram for explaining a manufacturing process of a working reticle (photomask) according to an example of an embodiment of the present invention.
- FIG. 2 is a partially cutaway configuration view showing an optical reduction projection type exposure apparatus used in manufacturing the working reticle in the example of the embodiment of FIG.
- FIG. 3 is a partially cutaway perspective view showing a case where alignment of a reticle is performed in the projection exposure apparatus of FIG.
- FIG. 4 is a perspective view of a main part showing a case where a reduced image of the parent pattern of the mass reticle is projected onto the substrate 4 in the projection exposure apparatus of FIG.
- FIG. 5 (a) is a diagram showing an example of an error of the imaging characteristic of the projection exposure apparatus using the working reticle manufactured in the embodiment, and (b) is a diagram for canceling the error of the imaging characteristic.
- FIG. 4 is a diagram showing a method for correcting the imaging characteristics of a reduced image of a parent pattern on a single reticle.
- FIG. 6 (a) is a diagram showing another example of the error of the imaging characteristic of the projection exposure apparatus using the working reticle manufactured in the embodiment
- FIG. 6 (b) is a diagram showing the error of the imaging characteristic
- FIG. 9 is a diagram illustrating a method of correcting the imaging characteristics of a reduced image of a parent pattern on a working reticle in order to kill.
- FIG. 7 is a view provided for explaining a manufacturing process of a single reticle (photomask) according to another example of the embodiment of the present invention.
- FIG. 8A is a plan view showing a reduced image of a first set of parent patterns exposed on the substrate 4 in an example of the embodiment
- FIG. Parent putter FIG. 4 is a plan view showing a reduced image of the image.
- FIG. 9A is a plan view showing a reduced image of a first set of parent patterns exposed on a substrate 4 in another example of the embodiment, and FIG. plan view showing a reduced image of the second set of Shinpayu over emissions being, (c) is c Figure 1 0 is an enlarged view of a portion of the double exposed image, the exposure area of the projection optical system FIG. 4 is an explanatory diagram of reduction of distortion by superposing and exposing images at different positions within the same position.
- FIG. 11A is a plan view showing a reduced image of a first set of parent patterns exposed on a substrate 4 in still another example of the embodiment
- FIG. 11B is a plan view showing a reduced image of the first set of parent patterns
- FIG. 9 is a plan view showing a reduced image of a second set of parent patterns.
- FIG. 12 is a perspective view showing a main part of a projection exposure apparatus that projects a pattern of a single reticle manufactured in the embodiment onto a wafer.
- FIG. 13 shows another embodiment of the present invention, wherein (a) is a plan view showing a first master reticle, (b) is a plan view showing a second master reticle, and (c) FIG. 3 is a plan view showing a first working reticle, and FIG. 3 (d) is a plan view showing a part of a second working reticle.
- FIG. 14 is a configuration diagram showing a projection exposure apparatus used in the embodiment of FIG.
- FIG. 15 is a perspective view of a main part showing a case where a predetermined circuit pattern unit is transferred onto a substrate in the projection exposure apparatus of FIG.
- FIG. 16 is a configuration diagram showing an example of a drawing mechanism provided in the projection exposure apparatus of FIG.
- FIG. 17 is a schematic configuration diagram showing a laser beam drawing apparatus for drawing a pattern of the master reticle MR1.
- FIG. 1 is a diagram showing a manufacturing process of a photomask according to the first embodiment of the present invention.
- a photomask to be manufactured is actually a semiconductor device.
- the working reticle 34 has an original pattern 27 for transfer from chromium (Cr), molybdenum silicate (MoSi2, or the like), or other mask material on one surface of a light-transmitting substrate made of quartz glass or the like. It is formed.
- two alignment marks 24A and 24B are formed so as to sandwich the original pattern 27.
- the working reticle 34 is reduced by a factor of 2 (? Is an integer greater than 1 or a half-integer, for example, 4, 5, or 6 etc.) through the projection optical system of the optical projection exposure apparatus. It is used in. That is, in FIG. 1, after a reduced image 27W twice as large as the original pattern 27 of the gold reticle 34 is exposed on each shot area 48 on the wafer W coated with the photoresist, development and etching are performed. Thus, a predetermined circuit pattern 35 is formed in each of the shot regions 48.
- the non-rotationally symmetric aberration of the projection image of the projection exposure apparatus and the imaging characteristics such as distortion characteristics are measured in advance, and the measurement results are used to manufacture the working reticle 34 as described later.
- FIG. 1 a circuit pattern 35 of a certain layer of a finally manufactured semiconductor device is designed.
- the circuit pattern 35 is formed by forming various line 'and' space patterns and the like in a rectangular area having a width of orthogonal sides dX and dY.
- the circuit pattern 35 is multiplied by a factor of?
- an original pattern 27 is formed on the image data of the computer, the rectangular pattern having a width of orthogonal sides of ?? dX, ⁇ and dY.
- Each image is transferred at the same magnification on a mask Yuichi Reticle Ri as a parent mask.
- a thin film of a mask material such as chromium or molybdenum silicate is formed on a light-transmitting substrate such as quartz glass and an electron is formed thereon.
- an equal-magnification image of the first parent pattern P1 is drawn on the electron beam resist using an electron beam drawing apparatus.
- the parent pattern P1 is formed in the pattern region 20 on the mask reticle R1 by performing etching, resist stripping, and the like.
- alignment marks 21A and 21B composed of two two-dimensional marks are formed in a predetermined positional relationship with respect to the parent pattern P1.
- the parent pattern P i and the alignment marks 21 A and 21 B are formed using an electron beam lithography apparatus or the like. These alignment marks 21 A and 2 IB are used for positioning when screen joining is performed later.
- each parent pattern P i to be drawn by the electron beam drawing apparatus is a pattern obtained by multiplying the original pattern 27 by two times
- the amount of each drawing data is However, the number is reduced to one or two compared to the case where the original pattern 27 is directly drawn.
- the minimum line width of the parent pattern P i is twice (for example, five times or four times) the minimum line width of the original pattern 27, each parent pattern P i
- electron beam lithography can be performed in a short time and with high accuracy using a conventional electron beam resist.
- the required number of working reticles 34 can be manufactured by repeatedly using them as described later. The time to produce reticles R1-RN is not a big burden.
- FIG. 2 shows an optical reduction projection type exposure apparatus used when manufacturing the working reticle 34.
- an exposure light source a fly-eye lens for uniformizing the illuminance distribution, and an illumination system are used.
- Exposure light IL is applied to a reticle on reticle stage 2 from an illumination optical system 1 including an aperture stop, a reticle blind (variable field stop), and a condenser lens system.
- an illumination optical system 1 including an aperture stop, a reticle blind (variable field stop), and a condenser lens system.
- the exposure light may be an emission line such as an i-line of a mercury lamp (wavelength 365 nm), a KrF excimer laser (wavelength 248 nm), or an ArF excimer laser (wavelength 193 nm). , or F 2 laser (wavelength 1 5 7 nm) other such, exposure light generated from the harmonic generator such as a YAG laser is used.
- an emission line such as an i-line of a mercury lamp (wavelength 365 nm), a KrF excimer laser (wavelength 248 nm), or an ArF excimer laser (wavelength 193 nm).
- F 2 laser wavelength 1 5 7 nm
- the image of the pattern in the illumination area of the master reticle Ri is projected onto the surface of the substrate 4 for the working reticle 34 at a reduction ratio of 1 / h (for example, 5 or 4) via the projection optical system 3.
- the substrate 4 is a light-transmitting substrate such as quartz glass, and a thin film of a mask material such as chromium or molybdenum silicate is formed in a pattern region 25 (see FIG. 4) on the surface thereof.
- Alignment marks 24 A and 24 B composed of two two-dimensional marks for alignment are formed so as to sandwich 5. Further, a photoresist is applied to the surface of the substrate 4 so as to cover the mask material.
- the Z axis is taken parallel to the optical axis AX of the projection optical system 3
- the X axis is taken parallel to the plane of Figure 2 in a plane perpendicular to the Z axis
- the Y axis is taken perpendicular to the plane of Figure 2 I do.
- the substrate 4 is held on a substrate holder (not shown) by vacuum suction.
- the substrate holder is fixed on a sample stage 5, and the sample stage 5 is fixed on an XY stage 6.
- the sample stage 5 uses the auto-focus method to set the focus position of the substrate 4 (optical axis AX direction).
- the surface of the substrate 4 is adjusted to the image plane of the projection optical system 3 by controlling the position), and the tilt angle.
- the XY stage 6 positions the sample stage 5 (substrate 4) on the base 7 in the X direction and the Y direction, for example, in a linear mode.
- the X coordinate, Y coordinate, and rotation angle of the sample table 5 are measured by a moving mirror 8 m fixed above the sample table 5 and a laser interferometer 8 arranged oppositely. 10 and the main control system 9.
- the movable mirror 8 m is a general term for an X-axis movable mirror 8 mX and a Y-axis movable mirror 8 mY.
- the stage control system 10 controls the operation of the XY stage 6 such as the linear motor based on the measured values and the control information from the main control system 9.
- a reticle library 16 having a shelf shape is arranged beside the reticle stage 2, and the master reticle R 1 is placed on N support plates 17 arranged in the Z direction sequentially in the reticle library 16. , R 2,..., RN are placed. These master reticles R 1 to RN are reticles (parent masks) on which parent patterns P 1 to PN, respectively, obtained by dividing the parent pattern 36 in FIG. 1, are formed.
- the reticle library 16 is supported by a slide device 18 so as to be movable in the Z direction.
- An arm that is rotatable and movable within a predetermined range in the Z direction is provided between the reticle stage 2 and the reticle library 16.
- a reticle loader 19 is provided.
- the main control system 9 controls the operation of the reticle loader 19 to obtain a desired support plate 17 in the reticle library 16.
- the reticle stage 2 and the reticle stage 2 are configured so that desired reticle R1 to RN can be delivered.
- the ith master reticle Ri in the reticle library 16 is mounted on the reticle stage 2.
- a storage device 11 such as a magnetic disk device is connected to the main control system 9, and an exposure data file is stored in the storage device 11.
- the exposure data file contains alignment information of the mass reticles R 1 to RN, and a projection image (projection optical system) of a projection exposure apparatus using the working reticle manufactured in this example. The image of the image forming characteristics is recorded.
- the XY stage 6 By the step movement, the next shot area on the substrate 4 moves to the exposure area of the projection optical system 3.
- the master reticle R 1 on the reticle stage 2 is returned to the reticle library 16 via the reticle loader 19, and the next transfer target reticle R 2 is transferred from the reticle library 16 to the reticle loader 16. It is placed on reticle stage 2 via 19.
- the alignment sensors 14 A and 14 B perform alignment of the mass reticle R 2
- a reduced image of the mass reticle R 2 is provided on the substrate 4 via the projection optical system 3.
- the shot areas are projected and exposed, and the remaining shot areas on the substrate 4 are successively exposed to reduced images of the corresponding master reticle R2 to RN by the step-and-repeat method.
- the projection exposure apparatus shown in FIG. 2 is a batch exposure type, but a scanning exposure type reduced projection type exposure apparatus such as a step-and-scan method may be used instead.
- the scanning exposure type the master reticle and the substrate 4 are synchronously scanned with respect to the projection optical system 3 at the reduction magnification ratio at the time of exposure.
- errors such as skew errors
- the projection exposure apparatus of this embodiment is provided with an alignment mechanism for a reticle and a substrate.
- FIG. 3 shows an alignment mechanism of the reticle according to the present embodiment.
- a light-transmitting reference mark member 12 is fixed on a sample table 5 near a substrate 4, and a reference mark member 12 is provided.
- a pair of cross-shaped reference marks 13A and 13B are formed at predetermined intervals in the X direction.
- an illumination system for illuminating the fiducial marks 13A and 13B is provided on the projection optical system 3 side with the illumination light branched from the exposure light IL. I have.
- the center of the reference marks 13 A and 13 B on the reference mark member 12 is almost projected optically by driving the XY stage 6 in FIG. 2 as shown in FIG.
- Optical axis AX of system 13 The fiducial marks 13A and 13B are positioned so as to match.
- two cross-shaped alignment marks 21A and 2IB are formed so as to sandwich the pattern region 20 on the pattern surface (lower surface) of the mask reticle Ri in the X direction.
- the distance between the reference marks 13A and 13B is set substantially equal to the distance between the reduced images of the alignment marks 21A and 21B by the projection optical system 3, and the center of the reference marks 13A and 13B is set as described above.
- an enlarged image of the reference marks 13A and 13B by the projection optical system 3 is obtained. It is formed near the alignment marks 21A and 21B of the mass reticle Ri.
- Mirrors 22A and 22B for reflecting the illumination light from the projection optical system 3 side in the ⁇ X direction are arranged above the alignment marks 21A and 21B, and are reflected by the mirrors 22A and 22B.
- Alignment sensors 14A and 14B of the image processing system are provided to receive the illuminated light by TTR (through-the-reticle) system.
- Each of the alignment sensors 14A and 14B includes an image forming system and a two-dimensional image sensor such as a CCD camera, and the image sensor detects the alignment marks 21A and 21B and the corresponding reference marks 13A and 13B. An image is captured, and the captured signal is supplied to the alignment signal processing system 15 in FIG.
- the alignment signal processing system 15 performs image processing on the imaging signal to determine the amount of displacement of the alignment marks 21A, 21B in the X and Y directions with respect to the images of the reference marks 13A, 13B, and obtains the two sets of positions.
- the deviation is supplied to the main control system 9.
- the main control system 37 positions the reticle stage 2 so that the two sets of positional shift amounts are symmetrical with each other and within a predetermined range.
- the alignment marks 21A and 21B, and thus the parent pattern P i (see FIG. 1) in the pattern area 20 of the reticle R i are positioned with respect to the reference marks 13A and 13B. .
- the center (exposure center) of the reduced image of the master pattern P i of the master reticle R i by the projection optical system 3 is substantially positioned at the center (almost the optical axis AX) of the reference marks 13A and 13B.
- Pi contour pattern area 20 contour
- the orthogonal sides of ⁇ are set parallel to the X and Y axes, respectively.
- the main control system 9 shown in FIG. 2 stores the coordinates (XF., YF.) Of the sample stage 5 in the X and Y directions measured by the laser interferometer 8 so that the mass reticle R i The alignment ends. Thereafter, any point on the sample stage 5 can be moved to the exposure center of the parent pattern Pi.
- an alignment sensor 23 of an off-axis system and an image processing system is also provided on the side surface of the projection optical system PL to detect the position of a mark on the substrate 4.
- the alignment sensor 23 illuminates the test mark with non-photosensitive and broadband illumination light on the photoresist, captures an image of the test mark with a two-dimensional image sensor such as a CCD camera, and aligns the imaging signal.
- Supply to the signal processing system 15. The distance (baseline amount) between the detection center of the alignment sensor 23 and the center (center of exposure) of the projected image of the pattern of the master reticle Ri is determined in advance using a predetermined reference mark on the reference mark member 12. It is determined and stored in the main control system 9. As shown in FIG.
- two cross-shaped alignment marks 24A and 24B are formed on the end of the substrate 4 in the X direction.
- the XY stage 6 is driven to sequentially move the detection marks of the alignment sensor 23 of FIG. 2 to the reference marks 13A and 13B of FIG.
- the alignment marks 24A and 24B are moved, and the amount of displacement of the reference marks 13A and 13B and the alignment marks 24A and 24B with respect to the detection center of the alignment sensor 23 is measured.
- the position of the sample stage 5 when the reference marks 13 A, 13 B and the alignment marks 24 A, 24 B are detected by the alignment sensor 23 are measured by the laser interferometer 8 in advance.
- the main control system 9 uses the sample when the center of the reference marks 13 A and 13 B matches the detection center of the alignment sensor 23.
- the coordinates of the stage 5 (XP, YP) and the coordinates ( ⁇ , ⁇ ) of the sample stage 5 when the center of the alignment marks 24 24 and 24 ⁇ ⁇ coincide with the detection center of the alignment sensor 23 are obtained. Thereby, the alignment of the substrate 4 is completed.
- the distances between the centers of the reference marks 13A and 13B and the centers of the alignment marks 24A and 24B in the X and Y directions are (XPQ-XPI, YP. ⁇ ). Become. Therefore, the XY stage 6 in FIG.
- the XY stage 6 in FIG. 2 is driven to move the sample stage 5 in the X and Y directions, so that the master pattern P i of the master reticle R i is located at a desired position with respect to the center on the substrate 4. Can be exposed.
- FIG. 4 shows a state in which the parent pattern P i of the i-th master reticle R i is reduced and transferred onto the substrate 4 via the projection optical system 3.
- the alignment of the surface of the substrate 4 is shown.
- a rectangular pattern area 25 surrounded by sides parallel to the X axis and the Y axis with the centers of the marks 24 A and 24 B as centers is virtually set in the main control system 9.
- the size of the pattern area 25 is the size obtained by reducing the parent pattern 36 of FIG. 1 by 1 / split, and the pattern area 25 is divided equally in the X and Y directions into shots.
- the main control system 9 drives the XY stage 6 in FIG.
- the center of the i-th shot area S i on the substrate 4 is aligned with the exposure center of the reduced image PI i of the parent pattern P i of the mask reticle R i obtained by the above alignment.
- the main control system 9 causes the exposure light source in the illumination optical system 1 in FIG. 2 to start emitting light, and exposes a reduced image of the parent pattern Pi to the shot area Si on the substrate 4.
- the reduced image of the parent pattern already exposed in the pattern area 25 of the substrate 4 is indicated by a solid line, and the unexposed reduced image is indicated by a dotted line.
- the reduced images of the parent patterns P 1 to PN of the N pieces of reticle R 1 to RN in FIG. 2 are sequentially exposed to the corresponding shot areas S 1 to SN on the substrate 4.
- the reduced images of the respective parent patterns P1 to PN are exposed while performing the screen splicing with the reduced images of the adjacent parent patterns.
- a projection image 26 obtained by reducing the parent pattern 36 of FIG. 1 by 1 / multiple is exposed on the substrate 4.
- the photoresist on the substrate 4 is developed, etched, stripped of the remaining resist pattern, etc., so that the projected image 26 on the substrate 4 becomes the original pattern 27 as shown in FIG.
- the working reticle 34 is completed.
- the substrate 4 when exposing one substrate 4, the substrate 4 is fixedly mounted on the sample stage 5 irrespective of the exchange of the reticle Ri, and its position is more accurately determined by the laser interferometer 8. It has been measured. Therefore, the positional relationship between the fiducial marks 13A, 13B and the substrate 4 does not change during the exposure of one substrate 4, so that when exchanging the mass reticle Ri, the mass reticle R i is changed.
- the alignment may be performed with respect to the reference marks 13A and 13B, and it is not always necessary to detect the position of the alignment marks 24A and 24B on the substrate 4 for each reticle.
- the parent pattern P i on each reticle R i is aligned with the fiducial marks 13 A and 13 B, and the XY stage 6 is controlled by the stage control system 10 monitored by the laser interferometer 8. Exposure is performed while maintaining a precise mutual positional relationship by position control. Therefore, it goes without saying that the joining accuracy between the patterns is also high.
- the alignment marks 24A and 24B do not necessarily need to be formed on the substrate 4 in advance. At this time, when the master package of the master reticle Ri is connected to the substrate 4 for reduction transfer as described above, a predetermined mark (for example, an alignment mark) on each mask reticle Ri is used.
- the alignment marks 24A and 24B are formed on the substrate 4 by a laser beam lithography system or an electron beam lithography system before transferring the patterns onto the substrate 4 using a plurality of mask reticles. It is formed in advance.
- the parent pattern of the m-th (the integer of N m 3) and subsequent mask reticle Ri is reduced and transferred onto the substrate 4
- the reduced images of the (m-1) parent patterns have already been reduced. 4 and the latent image of the mark is obtained for all or a part of the transferred images of the (m-1) parent patterns, and the positional information is obtained.
- the position information may be averaged or statistically processed to determine the position of the shot area (sample stage 5) on the substrate 4 where the reduced image of the m-th parent pattern is to be transferred.
- the shot area to which the m-th reduced image of the parent pattern is transferred among the shot areas to which the reduced images of the (m ⁇ 1) parent patterns are transferred is defined. Only at least one adjacent shot area may be selected, and a latent image of a mark in the selected shot area may be detected to obtain the position information.
- the number of marks formed on the reticle Ri is not limited to two, and the number may be one or three or more.
- the number of marks to be detected is not limited to two in the shot area where the reduced images of the (m-1) parent patterns are transferred, and the number is one or three or more. You may. At this time, the number of marks to be detected may be different for each shot area. Further, all the marks formed in one shot area to which the reduced image of the parent pattern is transferred may be detected, or only some of the marks may be detected. At this time, the arrangement (at least one of the number and the position) of the marks to be detected may be different for each shot area.
- the exposure under the best illumination conditions and imaging conditions is required for the dense pattern and the isolated pattern. Since the conditions are different, the exposure conditions, that is, the shape and size of the aperture stop in the illumination optical system 1, that is, the master reticle in the illumination optical system 1, are determined for each exposure of the master reticle R i according to its parent pattern P i.
- the intensity distribution, coherence factor, and numerical aperture of the projection optical system 3 of the exposure light on the Fourier transform plane with respect to the projection plane of R i may be optimized.
- the parent pattern P i When it is a pattern (periodic pattern), the modified illumination method is adopted, and the shape of the secondary light source may be defined as a ring-shaped shape or a plurality of local regions that are almost equidistant from the optical axis of the illumination optical system.
- An exposure apparatus that changes the shape and size of a secondary light source in accordance with a reticle pattern is disclosed in, for example, Japanese Patent Application Laid-Open No. 5-304076 and corresponding US Pat. No. 5,335,044. The disclosure of this Official Gazette and U.S. Patents shall be incorporated as part of the text as far as the national laws of the designated country designated in this International Application or the selected elected country permit.
- an optical filter that blocks exposure light in a circular area around the optical axis, for example, is inserted or removed in the vicinity of the pupil plane of the projection optical system 3, or the projection optical system 3
- progressive focus method flex method
- An exposure apparatus disclosed in Japanese Patent Application Laid-Open No. 5-677757 and adopting the progressive focus method is disclosed in, for example, Japanese Patent Application Laid-Open No. 5-133005 and the corresponding US Patent No. 4 8 3 3 1 1 and the disclosure of these publications and U.S. patents is incorporated herein by reference, to the extent permitted by the national laws of the designated country designated in this international application or of the selected elected country.
- the above-described progressive focus method may be adopted by using the parent mask as a phase shift mask and setting the extension value of the illumination optical system to, for example, about 0.1 to 0.4.
- photomasks are limited to masks consisting only of a light-shielding layer such as chrome.
- a phase shift mask of a spatial frequency modulation type (Shibuya-Levenson type), an edge enhancement type, or a halftone type may be used.
- the spatial frequency modulation type edge enhancement type since the phase shifter is patterned by superimposing it on the light shielding pattern on the mask substrate, for example, a separate parent mask for the phase shifter is prepared separately. It will be.
- the imaging characteristic of the projection image of the projection exposure apparatus using the working reticle 34 deviates from an ideal state.
- the imaging characteristics of the projection optical system 42 include a certain degree of non-rotationally symmetric aberration or distortion. In some cases, they may remain.
- the image-formation characteristics of the projection optical system 42 include a grid-like ideal image 28 indicated by a dotted line and a pincushion-type (or barrel-type) projected image 29 indicated by a solid line. It is assumed that there is a remaining situation.
- the amount of displacement of the projected image 29 with respect to the ideal image 28 at the distance r is approximately r ⁇ D (r).
- FIG. 5B again shows the arrangement of the shot areas S1, S2,..., SN on the substrate 4.
- the parent pattern corresponding to the original shot area S5 is shown.
- the reduced image PI5 is projected.
- the shot area S5 is reduced and projected by 1 ⁇ by the projection optical system.
- the displacement of the projection position in the radial direction is (r /?) D ( ⁇ / ⁇ ) according to equation (1).
- the exposure position of the reduced image ⁇ I5 is shifted by 6 (r) with respect to the shot area S5 in advance.
- the amount of displacement by the projection optical system is 6 (r) / ?. Therefore, the conditions for canceling the distortion with this displacement amount are as follows.
- a minus sign when D (r / 0) is a positive value means that the reduced image ⁇ I5 is displaced in the optical axis ⁇ direction.
- the exposure position of the corresponding reduced image ⁇ I7 is shifted so as to satisfy the expression (3), and the reduced image is similarly shifted in other shot areas. It is shifted.
- the shot area S13 on the optical axis AX1 there is no need to change the position of the reduced image PI13. As a result, the distortion shown in FIG. 5A is canceled, and the ideal image 28 is exposed.
- the projection optical system 3 of the projection exposure apparatus shown in FIG. 4 is provided with a correction mechanism for driving a predetermined lens element in the projection optical system 3, for example, so that the projection magnification / distortion can be controlled within a predetermined range. It is desirable to keep it. For example, when exposing the reduced image PI5 to the short area S5 in FIG. 5B, not only the exposure position is shifted by (r) using the projection exposure apparatus in FIG.
- the distortion characteristic of the projection optical system 3 is also corrected so as to cancel the corresponding partial distortion as much as possible. deep. As a result, the distortion shown in FIG. 5A can be canceled with higher accuracy as a whole.
- the projection exposure apparatus shown in FIG. 12 is a scanning exposure type such as a step-and-scan method
- the imaging characteristics of the projected image are indicated by dotted lines as shown in FIG. 6 (a).
- a so-called skew error in which the rectangular ideal image 30 becomes a parallelogram projected image 31 shown by a solid line remains will be described.
- the center of the projected image 31 is the same as the center 35 of the ideal image 30.
- the projected image 31 is distorted from the ideal image 30 by an angle ⁇ clockwise with respect to the Y axis which is the axis in the scanning direction. This is an error (also referred to as an example of non-rotationally symmetric aberration) peculiar to the scanning exposure method, which occurs when the scanning direction between the reticle and the substrate to be exposed is shifted.
- the partial image 31a deviates from the ideal partial image 30a by 1 in the X direction and is distorted into a parallelogram by an angle ⁇ .
- a step-and-scan operation in which the Y direction is the scanning direction is performed as a projection exposure apparatus that sequentially projects reduced images of the master reticles R 1 to N on the substrate 4.
- a projection exposure apparatus of the type is used. Then, for example, when exposing a reduced image PI21 of the master reticle R21 corresponding to the partial image 31a in FIG. 6A, the amount of lateral displacement 5X1 and the angle ⁇ The imaging characteristics are corrected so as to cancel the error.
- the dotted line array 32 in FIG. 6 (b) shows the arrangement of the designed shot area on the substrate 4, and in FIG. 6 (b), the design corresponding to the partial image 30a in FIG. 6 (a) is shown. It is assumed that a reduced image PI21 of the parent pattern is projected on the upper short area S21. In this case, when the shot area S 21 is reduced and projected by a factor of 2 with the projection optical system, the lateral shift amount is 1, so that the exposure position of the reduced image PI 21 with respect to the shot area S 21 is only 2 in advance. If the position is shifted, the amount of position shift by the projection optical system is 1 (5X2 / ⁇ 5 (the minus sign is due to reverse projection). The conditions for canceling are as follows.
- the scanning direction is set to the ⁇ direction, and the scanning direction between the master reticle and the substrate 4 is shifted, so that the reduced image ⁇ 12 1 is Distorts counterclockwise by an angle ⁇ .
- the exposure position of the corresponding reduced image is shifted laterally and distorted by an angle counterclockwise with respect to the ⁇ axis.
- the skew error in FIG. 6A is substantially canceled, and the ideal image 30 is exposed.
- a scanning exposure apparatus that corrects the above-described magnification error and image distortion is disclosed in, for example, Japanese Patent Application Laid-Open No. Hei 6-310399. W
- FIG. 7 is a view showing a process of manufacturing a photomask according to the second embodiment of the present invention.
- the photomask to be manufactured is actually a semiconductor device similar to FIG. Working reticle 34 used in manufacturing.
- the difference of the second embodiment from the first embodiment is that M sets of master reticles (M is an integer of 2 or more) as a parent mask are prepared, and a plurality of sets of the master reticles Ri, Q i. Is used to manufacture the working reticle 34.
- the circuit pattern 35 is multiplied by ⁇ to create an original pattern 27 having a rectangular area having a width of an orthogonal side of /? ⁇ DX, ⁇ ⁇ dY.
- the master pattern 27 is multiplied to create a parent pattern 36 consisting of a rectangular area having widths of orthogonal sides of ⁇ , dX, a, ⁇ , dY, and then the parent pattern 36 is divided.
- the mass reticle Ri is the same as that shown in FIG.
- parent patterns P 1, P 2,..., PN obtained by dividing the parent pattern 36, using the data pattern again, the parent pattern P i is multiplied by each, and the second set of Transfer onto master reticle Q i as N parent masks.
- the parent patterns P1 to PN on the second set of cells Q1 to QN are hereinafter referred to as parent patterns A1 to AN for distinction.
- each parent pattern P i and A i reduces the amount of each drawing data to about 1Z ⁇ 2 compared to the original pattern 27, and the minimum line width is doubled.
- the parent patterns Pi and A i can be drawn in a short time and with high accuracy.
- the single king reticle 34 is manufactured by superimposing and transferring the image on the 4.
- a reduced image of the first set of master reticles R1 to RN is exposed on each shot area of the substrate 4 by the step-and-beat method. Are exposed by overlapping the reduced images of the second set of reticle Q1 to QN.
- a scanning exposure type reduction projection exposure apparatus such as a step-and-scan method may be used instead of the batch exposure type.
- the alignment mechanism shown in FIGS. 2 and 3 is used not only for master reticles R1 to RN, but also for performing high-accuracy screen splicing (joining) between reduced images of master reticles Q1 to QN. For this alignment, as in the case of master reticle R i, two cross-shaped alignment marks formed on master reticle Q i are used.
- the reduced images of the parent devices P 1 to PN of the first set of N master reticles R 1 to RN are sequentially exposed to the corresponding shot areas S 1 to SN on the substrate 4.
- an image obtained by connecting the reduced images PI1 to PIN is a projected image 26P obtained by reducing the parent pattern 36 of FIG. 7 by 1 / multiple.
- the reduced images AI1 to AIN of the parent patterns A1 to AN of the second set of N cells in Fig. 7 are shown in Fig. 8 (b).
- exposure is performed so as to overlap the reduced images PI1 to PIN in FIG.
- the image obtained by connecting the reduced images AI1 to AIN is also a projected image 26A obtained by reducing the parent pattern 36 of FIG. 7 by 1 / multiple.
- the photoresist on the substrate 4 is developed, etched, and the remaining resist pattern is peeled off, so that the projected images 26P and 26A on the substrate 4 can be converted into originals as shown in FIG.
- the King Reticle 34 is completed.
- the alignment marks 24A and 24B it is not necessary to provide the alignment marks 24A and 24B on the substrate 4 in advance.
- a predetermined mark for example, the alignment mark 21A, 2IB
- the adjacent mark is also transferred.
- the transfer position of the reduced image of the parent pattern of the adjacent master reticle is corrected. You may.
- the position of the shot area on the substrate 4 to which the next reduced image of the parent pattern is to be transferred may be determined by using both the alignment marks 24A and 24B and the latent image of the mark described above.
- the position information obtained by detecting the latent image of the mark in at least two shot areas to which the reduced image of the parent pattern has been transferred is averaged, or The position of the shot area on the substrate 4 to which the reduced image of the next parent pattern is to be transferred by statistical processing may be determined.
- one shot area on the substrate 4 is double-exposed using two sets of master reticles Qi and Ai. Therefore, the exposure amount given to the substrate 4 by the first exposure using the master reticle Qi and the second exposure using the master reticle Ai To make the exposure amount given to the substrate 4 equal. That is, it is desirable to set the exposure amount to half of the appropriate exposure amount determined according to the sensitivity characteristics of the photoresist. However, the sum of the exposure amounts given to the substrate 4 by the first and second exposures only needs to be the aforementioned appropriate exposure amount, and the exposure amounts given to the substrate 4 may be made different between the first exposure and the second exposure. Also, for example, when the exposure amount given to the substrate 4 by the first exposure does not reach the target value (half of the appropriate exposure amount), the target value (the It is sufficient to provide the substrate 4 with an exposure amount exceeding (half of the appropriate exposure amount).
- the exposure conditions that is, the shape and size of the aperture stop in the illumination optical system 1, the coherence factor, the numerical aperture of the projection optical system 3, etc. are optimized according to the parent pattern A i. You may make it.
- a predetermined optical filter (a so-called pupil filter) is removed near the pupil plane of the projection optical system 3, or the image plane of the projection optical system 3 and the surface
- a so-called progressive focus method (flex method) in which the surface and the surface are relatively vibrated within a predetermined range may be used together.
- the mask substrate is exposed to light from the exposure optical system while the mask substrate is exposed to the pattern.
- progressive focusing which moves in a direction along the axis, may be used.
- this progressive focus method may be used in combination with an optical filter that is arranged on the pupil plane of the projection optical system and blocks illumination light passing through a circular area centered on the optical axis.
- the parent mask may be a phase shift mask
- the illumination optical system elongation value may be set to, for example, about 0.1 to 0.4, and the above-described progressive focus method may be employed.
- the photomask is not limited to a mask composed of only a light shielding layer such as chrome, but may be a spatial frequency modulation type (Shibuya-Benson type), an edge enhancement type, and a halftone. It may be a phase shift mask such as a mold. In particular, in the spatial frequency modulation type and the edge enhancement type, since the phase shift is overlapped with the light-shielding pattern on the mask substrate, the position shift is performed. A parent mask for the lid is separately prepared.
- the original pattern 27 of the king reticle 34 of the present embodiment is formed by superimposing and exposing the reduced images of the parent patterns of the two sets of reticle R 1 to RN and Q 1 to QN. It is formed.
- the pattern position error, line width variation, and the like that occur when drawing the parent pattern of these master and reticle are different between the two sets of master reticles. Therefore, by double-exposing the reduced images of the parent patterns of these two sets of master reticle, the pattern position error and line width variation of the master reticle drawing device are averaged in the reduced images of each parent pattern. Is reduced. Therefore, the original pattern 27 of the working reticle 34 can be formed with high precision.
- the imaging characteristic of the projected image of the projection exposure apparatus using the working reticle 34 is out of the ideal state, not only the master reticle P i but also the master reticle Q i has the parent pattern A.
- the exposure position is shifted in the X and Y directions from the original shot area S i so as to cancel the distortion and the like.
- the projection magnification, distortion characteristics, etc. are also corrected.
- the skew error when exposing the pattern image of each master reticle for both the master reticle P i and the reticle P i is calculated.
- the countermeasure may be made by distorting the pattern image of each reticle so as to cancel each other.
- a master reticle in which a periodic dense pattern or the like is formed among the two sets of mass reticles R 1 to RN and Q 1 to Q N may be, for example, a phase shift reticle.
- the same master pattern is formed on each of the two sets of master reticles R 1 to RN and Q 1 to QN, and the image of the master pattern of these two sets of master reticles is formed on the substrate 4.
- the parent pattern 36 in FIG. 7 was divided into two sets of parent patterns in different arrangements (division boundaries), and these two sets of parent patterns were separated. Exposure by overlaying the reduced image on substrate 4 You may do so.
- the first set of parent patterns among the two sets is N parent patterns P 1 to PN in FIG. 7, a reduced image of these parent patterns P 1 to PN?
- FIG. 9 (a) 11 to knit 1 are exposed as a projected image 26P while being connected to the pattern area 25 on the substrate 4.
- the second set of a plurality of parent patterns is a pattern obtained by dividing the parent pattern 36 in FIG. 7 at the central position in the Y direction of the parent patterns P1 to PN, as shown in FIG.
- reduced images BI1 to BI30 of the second set of a plurality of parent patterns are projected images that straddle the reduced images PI1 to PI25 in FIG. 9 (a) in the Y direction.
- the exposure is overlaid as 26mm.
- the pattern area on the reduced image PI1 in Fig. 9 (a) is half that of the reduced image PI1 and is the same as the left half of the reduced image PI1.
- the left half of the reduced image BI10 that straddles the area of the reduced images PI1 and PI10 and therefore has half the pattern of each area of the reduced images PI1 and PI10. Exposed.
- the right half of the reduced image BI10 is the same pattern as the left half of the reduced image PI10, and these patterns are also exposed.
- the right half FR is used in the exposure area of the projection optical system 3 in FIG. 2, even if distortion is generated as indicated by the arrow DRL.
- the overall distortion becomes an arrow due to the averaging effect. It decreases as shown by DT.
- the second set of reduced images BI 6 to BI 25 straddle the boundary of the first set of reduced images PI 1 to PI 25 in the Y direction, so that the joint error in the Y direction is also averaged. It is reduced by.
- the second set of parent patterns is separated at the center in the Y direction of the first set of parent patterns, but the second set of parent patterns is divided by the X of the first set of parent patterns.
- the directions may be separated.
- the second set of parent patterns may be divided between the X and Y directions of the first set of parent patterns.
- the images PI1 to PI16 are exposed as a projection image 26P while being joined to the pattern area 25 of the substrate 4, as shown in FIG. 11 (a).
- the reduced images CI1 to CI25 of the second set of 25 parent patterns are combined with the projected image 26C while being connected to the pattern area 25 of the substrate 4 as shown in FIG. 11 (b). Exposure is repeated. In this way, by shifting the division of the second set of parent patterns in the X and Y directions, the joint error in the X and Y directions of the final projected image is reduced by the averaging effect.
- the number of multiple exposures is not limited to two, and three or more multiple exposures may be performed using three or more sets of reticle groups.
- FIG. 12 shows a main part of a reduction projection type exposure apparatus equipped with the working reticle 34.
- the lower surface of the reticle 34 held on a reticle stage (not shown) has a reduction magnification.
- the wafer W is arranged via a projection optical system 42 (where? Is 5, or 4, etc.).
- a photoresist is applied to the surface of the wafer W, and the surface is held so as to match the image plane of the projection optical system 42.
- the wafer W is held on a sample stage 43 via a wafer holder (not shown), and the sample stage 43 is fixed on an XY stage 44. Positioning the wafer W by driving the stage 44 based on the moving mirrors 45 mX, 45 mY on the sample table 43 and the coordinates measured by the corresponding laser interferometer Is performed.
- a reference mark member 46 having fiducial marks 47 ⁇ and 47 7 formed thereon is fixed on the sample table 43, and an alignment mirror formed so as to sandwich the pattern area 25 of the working reticle 34 in the X direction.
- Arrangement sensors 41 ⁇ and 4 IB for reticle alignment are arranged above the holes 24 ⁇ and 24 ⁇ . Again, in this case, 5 ⁇ Alignment of working reticle 34 with respect to sample table 43 using fiducial marks 47 A and 47 B, alignment marks 24 A and 24 B, and alignment sensors 41 A and 41 B Is performed. Thereafter, when performing the overlay exposure, the alignment of each shot area 48 on the wafer W is performed using a wafer alignment sensor (not shown) (for example, the alignment sensor in FIG. 2 can be used). Is performed.
- an excimer laser beam or the like is applied from the illumination optical system (not shown) to the pattern area 25 of the king reticle 34.
- an image 27 W obtained by reducing the original pattern 27 in the pattern area 25 at a reduction magnification is exposed to the short area 48.
- the wafer W is developed, and processes such as etching are performed.
- a circuit pattern of a certain layer of the semiconductor device is formed in each shot area.
- EGA Enhanced Global Alignment
- a scanning projection type reduction projection exposure apparatus such as a step-and-scan method may be used.
- FIG. 13 is an explanatory diagram of a method for manufacturing a photomask according to the third embodiment of the present invention.
- a photomask to be manufactured in the present example Is the working reticle WR, which is used in actually manufacturing semiconductor devices.
- a pattern Pr corresponding to two alignment marks is formed so as to sandwich the original pattern, and is transferred to a wafer mark in the original pattern and then becomes a wafer mark.
- the pattern Pw is formed.
- the king reticle WR, WR1 of this example is used for double reduction projection through the projection optical system of the optical projection exposure apparatus as in the first and second embodiments.
- the first reticle WR of this example is formed by forming a thin film of a mask material on a predetermined substrate, applying a photoresist, and then forming a first and second masks as parent masks shown in FIGS. 13 (a) and 13 (b). It is manufactured by transferring an optical same-size image or a reduced image of a plurality of circuit pattern units selected from the pattern areas of the mass reticles MR 1 and MR 2 in a predetermined arrangement. That is, after this transfer, the photoresist is developed, the remaining resist pattern is used as a mask for etching, and the resist is stripped, thereby forming the original pattern and the pattern Pr shown in FIG. 13 (c). You. The same applies to (1) King reticle WR1 in Fig. 13 (d), but (1) the original pattern of reticle WR1 is different from that of working reticle WR.
- the pattern area of the first mass reticle MR 1 has, as an example, a CPU (Central Processing Unit) as a semiconductor large-scale integrated circuit (LSI).
- Circuit pattern unit Pa equivalent to a memory unit
- circuit pattern unit Pb equivalent to an SRAM (Static Random Access Memory)
- circuit pattern unit Pc equivalent to a memory access controller
- other circuit pattern units Pd Pe are formed.
- the circuit pattern units are separated from each other by a light-shielding film SA, and a pair of alignment marks R A1 and RA2 are formed so as to sandwich the pattern region.
- the circuit area of the second master reticle MR 2 includes a circuit pattern unit P f corresponding to a ROM (Read Only Memory) as an LSI and a DRAM.
- a circuit pattern unit Ph, Pi, Pj corresponding to a gate array which is an aggregate of NAND gates or NOR gates having 2 to 4 terminal inputs, is formed together with a circuit pattern unit Pg corresponding to Memory).
- a circuit pattern unit Pr serving as an alignment mark for a working reticle and a circuit pattern unit Pw serving as a wafer mark are also formed in the pattern area of the mass reticle MR2.
- the circuit pattern units are separated from each other by the light shielding film SA, and a pair of alignment marks RA1 and RA2 are formed so as to sandwich the pattern region.
- the patterns Pb, Pf, Pj,... In the working region of the working reticles WR, WR1 in FIGS. 13 (c) and (d) are the masks in FIGS. 13 (a) and (b). Yuichi An image projected from the circuit pattern units Pb, Pf, Pj,... in reticle MR1, MR2 at 1 / ⁇ times (hence, 1, 1, an integer greater than 1, or a half integer greater than 1) Represents.
- the string is preferably an integer greater than 1 such as 4, 5, or 6, or a half integer greater than 1, and in this case, the patterns Pb, Pf, Pj, and Pb in FIGS. ... are reduced images of the circuit pattern units Pb, Pf, Pj, ... in FIGS. 13 (a) and 13 (b).
- the first original pattern which is twice the circuit pattern of those devices, is designed on the image data. Is done.
- a plurality of circuit blocks each having a pattern common to each other are extracted from the first original pattern, and circuit pattern units Pa to Pe, Pf to Pj, and Pr are obtained by multiplying these circuit blocks.
- these circuit pattern units Pa to Pw are combined to obtain the master patterns (Fig. 13 (a) and (b)) of the master reticle MR1 and MR2. 2) is formed over the entire image.
- the second original pattern is drawn on a substrate on which a mask material and a resist are applied, and then developed,
- the master reticles MR1 and MR2 shown in Figs. 13 (a) and 13 (b) are manufactured by performing etching and resist stripping.
- the specified pattern in the circuit pattern unit in the master reticle MR1, MR2 (1) Transfer onto the substrate for King reticle WR, WR1 so that the projected image of the pattern W 9 355 4 Q has a predetermined positional relationship (the positional relationship of the first original pattern described above). Is performed.
- the outline of the projection exposure apparatus used for this transfer will be described with reference to FIG.
- FIG. 14 shows a projection exposure apparatus for transferring a projected image of a pattern selected from a master reticle onto a working reticle substrate.
- a mercury lamp a KrF excimer laser ( wavelength 2 4 8 nm), a r F excimer one the (wavelength 1 9 3 nm), F 2 laser (wavelength 1 5 7 nm) or the like of the light source or the exposure light source 1 0 1 such as harmonic generator of YAG laser
- Exposure light IL emitted from a reticle blind (variable field stop) 104 is radiated through a lens 103 after the illuminance distribution is made uniform by an illuminance uniforming member 102 such as a fly eye lens. I do.
- the reticle plumb 104 is arranged on a plane conjugate to the pattern surface of the reticle to be exposed, and the illumination system control system 108 changes the shape of the opening of the reticle blind 104 through the drive unit 104a. It is configured to be a rectangle or the like of any size, and the position of the opening can be set to any position.
- a main control system 118 that controls the overall operation of the apparatus instructs the illumination system control system 108 about the position and shape of the opening of the reticle blind 104.
- the main control system 118 instructs the illumination system control system 108 to emit light of the exposure light source 101, and illumination conditions of the illumination system (normal illumination, annular illumination, deformed illumination, etc.), It also indicates the set value of the coherence factor (value).
- Exposure light IL that has passed through the aperture of the reticle blind 104 reaches the aperture stop 106 through the relay lens 105. Since the aperture stop 106 needs only to be located on the optical Fourier transform plane (pupil plane) with respect to the reticle pattern surface, the aperture stop 106 is used, for example, the exit surface of the illuminance uniformizing member 102. May be arranged.
- the illumination system control system 108 changes the shape and size of the aperture stop 106 via the driving unit 106 a to change the illumination conditions of the exposure light IL and the coherence factor (value). Is set to the condition set in the main control system 1 18.
- the exposure light IL passes through a condenser lens 107 and passes through an illumination area 5 surrounding a circuit pattern unit to be transferred in a reticle (in this example, a master reticle MR 2 is mounted) on a reticle stage 110. Illuminate 2 (see Figure 15).
- the light transmitted through the reticle MR2 is projected by the projection optical system 113 onto the substrate 50 for the working reticle WR, which is the substrate to be exposed, of the selected circuit pattern unit on the master reticle MR2.
- a mask material is formed in the pattern region 55 (see FIG. 15) on the substrate 50, and a photoresist is applied so as to cover the mask material.
- the Z axis is taken parallel to the optical axis AX of the projection optical system 113
- the X axis is parallel to the plane of Fig. 14 in a plane perpendicular to the Z axis
- Y is perpendicular to the plane of Fig. 14 A description will be given taking the axis.
- the reticle stage 110 positions the reticle MR 2 in the X, Y, and rotation directions.
- the position of reticle stage 110 is measured with high accuracy by a laser interferometer (not shown), and main control system 118 controls the operation of reticle stage 110 based on the measured values.
- reticle alignment microscopes 109 A and 109 B are arranged above alignment marks RA 1 and RA 2 (see FIG. 13 (b)) of master reticle MR 2, and reticle alignment microscope 10 9
- the detection signals of A and 109B are supplied to the main control system 118.
- the substrate 50 is held on a substrate holder (not shown) by vacuum suction, and this substrate holder is fixed on the sample stage 114, and the sample stage 114 is fixed on the stage 116. .
- the sample stage 114 can control the focus position (position in the direction of the optical axis AX) and the tilt angle of the substrate 50 by an autofocus method based on the detection result of an autofocus sensor (not shown).
- the surface of the substrate 50 is aligned with the image plane of the projection optical system 113.
- the XY stage 116 positions the sample stage 114 (substrate 50) on the base 117 in the X direction and the Y direction by, for example, a linear motor system.
- the X-axis, Y-coordinate, and rotation angle of the sample stage 114 are measured by the movable mirror 111 mm fixed to the upper end of the sample stage 114 and the laser interferometer 115 arranged opposite.
- the measured values are supplied to the stage control system 119 and the main control system 118.
- the stage control system 119 controls the operation of the XY stage 116, such as a linear motor, based on the measured values and the control information from the main control system 118.
- a reference mark member FM1 is fixed on the sample stand 114. As shown in FIG. 15, the reference mark member FM1 is illuminated from the bottom with, for example, illumination light in the same wavelength range as the exposure light IL, as shown in FIG.
- the two-dimensional reference marks 51A and 51B to be formed are formed.
- a reticle library 112 is arranged on the side of the reticle stage 110, and master reticles MR1, MR2, MR2 are arranged on a shelf 112a movably arranged in the Z direction in the reticle library 112. MR 3 and MR 4 are placed.
- the second reticle MR 2 is placed on the reticle stage 110.
- the master reticles MR 1 and MR 2 are the master reticles shown in FIGS. 13 (a) and 13 (b).
- the shelf 112a in the reticle library 112 can be moved to a desired position in the Z direction under the control of the illumination system control system 108, and can freely rotate in the Z direction between the reticle stage 110 and the reticle library 112.
- a reticle porter 111 having an arm that can move within a predetermined range is provided. After the illumination system control system 108 adjusts the position of the shelf 112a of the reticle library 112 in the Z direction, the operation of the reticle loader 111 is controlled, and the desired reticle MR1 to MR4 in the reticle library 112 are stored. It is configured so that it can be transferred to and from the reticle stage 110.
- a storage device 118a such as a magnetic disk device is connected to the main control system 118, and an exposure data file is stored in the storage device 118a.
- the exposure data file contains the positional relationship of each circuit pattern unit in the mass reticles MR1 and MR2, and the positional relationship and alignment information of these projected images in the working reticles WR and WR1. Etc. are recorded.
- the displacement of the alignment marks RA1 and RA2 on the master reticle MR1 is measured with respect to 51B, and, as an example, the displacement is made via the reticle stage 110 so that these displacements are almost symmetric and minimized.
- the reticle MR 1 is aligned.
- the reticle blind 104 is set so as to illuminate, for example, only the circuit pattern unit Pa in FIG. Then, after moving the XY stage 116 so that the position of the projected image of the circuit pattern unit Pa becomes the designed position on the working reticle WR in FIG. 13C, the shirt in the exposure light source 101 is moved.
- the circuit pattern unit Pa is illuminated by opening and closing or by oscillating a laser light source, and a projected image of the pattern is exposed on the substrate 50.
- the reticle blind 104 is reset so that only the circuit pattern unit Pb is illuminated, and the XY stage 116 is set so that the position of the projected image of the circuit pattern unit Pb becomes the design position on the working reticle WR. Move to and perform exposure again. In the same manner, the circuit pattern units Pc and Pd on the mask reticle MR1 are sequentially exposed.
- the pattern of the circuit pattern units Pa to Pd is a periodic pattern or an isolated pattern
- lighting conditions normal lighting, annular lighting, deformed lighting, values, etc.
- exposure conditions It is desirable to optimize the numerical aperture of the projection optical system 113, the exposure amount, and the so-called flex method in which the surface of the substrate 50 is relatively displaced in the Z direction with respect to the image plane of the projection optical system 113.
- annular illumination may be used
- a flex method may be used in combination.
- the reticle loader 111 of FIG. 14 unloads the reticle MR 1 from the reticle stage 110 onto the reticle library 112, and instead transfers the master reticle MR 2 onto the reticle stage 110.
- the master-reticle MR2 is aligned in the same manner as the master-reticle MR1.
- the illumination area 52 when the illumination area 52 is set so as to surround the circuit unit Ph on the master reticle MR2 as shown in Fig. 15, the working area can be understood from Fig. 13 (c).
- the working area can be understood from Fig. 13 (c).
- five exposed areas 53 A to 53 E on the substrate 50 are sequentially printed as shown in FIG.
- the exposure is performed by moving to the position of the projection image of the knit Ph.
- two exposed areas 54 A and 54 B sandwiching the pattern area 55 on the substrate 50 in the X direction are provided with circuit patterns corresponding to alignment marks in the master reticle MR 2 respectively.
- the image of the unit Pr is exposed, and an area in the pattern area 55 adjacent to the exposed area 54B is provided with a circuit pattern unit corresponding to, for example, a two-dimensional wafer mark in the mask reticle MR2.
- the image of P w is exposed.
- each circuit pattern unit on the master reticles MR 1 and MR 2 by the reticle blind 104 is not necessarily performed so as to select a pattern completely within the outline of each unit, but the selection of each unit.
- Exposure light IL may leak into an area of about l mm width around the contour. Therefore, a light-shielding film (light-shielding zone) S A is provided between the circuit pattern units on the mass reticle MR 1 and MR 2 to prevent light leakage.
- the photoresist applied on the substrate 50 is developed, and the light-shielding film such as chrome on the substrate 50 is etched using the formed resist pattern as a mask. Then, by removing the resist, the working reticle WR shown in Fig. 13 (c) is completed. A light-shielding band (light-shielding film) around the circuit pattern on the working reticle WR (pattern formed by the above exposure) so that exposure due to exposure light leakage from the reticle blind when using a stepper etc. does not occur. WSA remains.
- the photoresist used is a positive type, the light-shielding band WSA will be shaped tangeJP 8/05 1
- the single reticle WR 1 partially shown in FIG. 13D can be manufactured by exposing a projection image of a circuit pattern unit selected from the master reticle MR 1 or MR 2 in a predetermined positional relationship. .
- a circuit pattern unit selected from the master reticle MR 1 or MR 2 in a predetermined positional relationship.
- the patterns of working reticles WR and WR1 are completed by a combination of circuit pattern units selected from two master reticles MR1 and MR2.
- the number of master reticles is not limited to two, and any number may be used.
- the projection magnification (1Z) of the projection optical system 113 in FIG. 14 is set to a value such that the pattern on the mass reticle MR 1 or MR 2 is reduced and projected onto the working reticle WR or WR 1. Desirably.
- the adverse effects of dimensional accuracy and positional accuracy when drawing patterns on the master reticles MR1 and MR2 can be reduced by the reduction magnification (1 / h). It is possible.
- a wiring pattern or the like may be additionally drawn on the substrate of the working reticle using a laser drawing apparatus, an electron beam drawing apparatus, or the like. Therefore, the projection exposure apparatus of FIG. 14 additionally has a drawing mechanism for drawing a desired pattern.
- FIG. 16 shows a drawing mechanism of the projection exposure apparatus of FIG. 14.
- a laser drawing mechanism is provided near the side surface of the projection optical system 113. That is, the light beam LB1 emitted from the laser light source LA1 is applied to the working reticle WR substrate 50 via the modulation element AMI having an electro-optical element and the like, the mirror 121, and the condenser lens 120. To form a spot beam.
- the modulation element AMI is, for example, an intensity modulation element combining a Pockels cell, a polarizer, and an analyzer.
- the oscillation timing of the laser light source LA1 and the operation of the modulation element AMI are controlled by the main control system 118. Controlled.
- the main control system 118 synchronizes with the movement of the drawing area on the substrate 50 directly below the condenser lens 120 via the XY stage 116 to oscillate the laser light source LA 1,
- a desired wiring pattern or the like can be drawn by modulating the modulation element AM1 and changing the intensity of the spot beam by the light beam LB1.
- the positional relationship between the projected image of each circuit pattern unit in the master reticles MR 1 and MR 2 transferred by the projection optical system 113 and the spot beam by the light beam LB 1 needs to be matched. Therefore, it is desirable to measure the positional relationship between the two before drawing, for example, using the reference mark member FM1.
- an image processing type alignment sensor 122 is provided on the side of the projection optical system 113, and each of the mass reticle MR 1 and MR 2 transferred by the projection optical system 113 is provided.
- the position of the projected image itself of the circuit pattern unit may be detected by the alignment sensor 122, and the spot beam may be adjusted to that position.
- a latent image (a change in the transmittance or refractive index of the resist-exposed portion in an undeveloped state) may be detected, or a circuit board may be used. After the development of 50, the substrate after development may be re-exposed to the exposure device to detect the uneven resist image.
- a wiring pattern between each circuit pattern unit is required.
- a single reticle is only three to four in view of the total number (about 20) (metal wiring in the latter half). (Reticle corresponding to the process).
- the drawing mechanism in Fig. 16 is a stage scanning type and the drawing speed is slow, but the time required to perform laser drawing using the drawing mechanism requires exposure of all of the required number of working reticle substrates. It is shorter than the time it takes to perform and has little effect on overall throughput.
- a mechanism of a laser writing apparatus using beam scanning shown in FIG. 17 described later may be employed.
- the line width of the wiring pattern between the circuit pattern units is generally thicker than the pattern in the circuit pattern unit, and there is no problem in terms of dimensional accuracy even when directly drawn by a laser drawing apparatus. .
- the production of the mass reticles MR 1 and MR 2 can be performed using a reticle drawing apparatus such as a laser beam drawing apparatus or an electron beam drawing apparatus which is generally used conventionally.
- Fig. 17 shows an example of a reticle drawing device (laser beam drawing device) using a laser beam.
- the substrate 60 for the mass reticle MR 1 is held on a sample stand 134.
- the sample stage 13 4 is fixed on the stage 13 6, and the XY stage 13 6 is mounted on the base 13 7 in the two-dimensional and rotational directions of the sample stage 13 4 (substrate 60).
- Perform positioning The position of the sample stage 134 was measured with high precision by the moving mirror 135 m on the sample stage 134 and the laser interferometer 135 arranged opposite to each other.
- the control device 1338 controls the positioning operation of the XY stage 1336.
- the light beam LB2 for pattern formation emitted from the laser light source LA2 passes through the modulation element AM2 for modulating the intensity and the shaping optical system 130, is reflected by the polygon mirror 131, and then is A spot beam is formed on the substrate 60 of the master reticle MR 1 by the lens 13 3.
- a mask material is applied on the substrate 60, and a photoresist is applied thereon.
- the oscillation operation of the laser light source LA 2 and the modulation operation of the modulation element AM 2 are controlled by a control device 13 8.
- the control device 13 8 is further controlled by a polygon mirror 13 1 via a rotation drive unit 13 2. Is rotated around the rotation axis 1311a, and is also periodically vibrated around a predetermined axis parallel to the paper surface in Fig. 17.
- the control device 1338 rotates the polygon mirror 1312 two-dimensionally and scans the objective lens 1333 two-dimensionally with the light beam LB2.
- a storage device such as a magnetic disk device (not shown) connected to the control device 138 stores drawing data indicating the shape and positional relationship of each circuit pattern unit Pa to Pe to be drawn.
- the controller 1338 modulates the laser light source LA2 or the modulating element AM2 based on the drawing data, rotates the polygon mirror 131, and puts each circuit on the substrate 60. Draw the pattern unit. However, since the drawing area is narrow only in the field of view of the objective lens 13 3, the XY stage 13 6 is moved each time drawing is completed in each field of view, and the pattern is joined between adjacent fields of view. Perform drawing.
- the second master reticle MR2 can be manufactured similarly.
- An electron beam lithography system may be used to form the patterns of the mass reticle MR1, MR2.
- the processing capability (throughput) of an electron beam lithography system is lower than that of a laser beam lithography system. It is preferable to use a laser beam drawing apparatus as described above from the viewpoint of performance.
- the dimensional accuracy of minute patterns is inferior to that of an electron beam lithography system.
- the master reticle MR 1 Since the pattern on the MR 2 can be an enlarged pattern of the working reticle WR pattern, the demand for dimensional accuracy is eased and the problem of dimensional error is eliminated.
- the projection exposure apparatus used in this example is basically the same as a conventionally used batch exposure type (stepper type) or a scanning exposure type reduced projection type exposure apparatus such as a step-and-scan method. It is.
- the optical reduction shown in FIG. A projection type exposure apparatus is used.
- the working reticle WR shown in FIG. 13C is held on the reticle stage instead of the working reticle 34.
- a circuit pattern on the wafer W is formed by precisely superimposing a circuit pattern several times (about 20 layers) on each wafer.
- the alignment sensor detects each wafer mark to determine the position of the already formed circuit pattern.
- the pattern image of the working reticle WR is accurately superimposed on this circuit pattern and exposed. Is done.
- the wafer mark is obtained by transferring a pattern corresponding to the pattern Pw in the single reticle WR of FIG. 13C in the process up to that point, for example.
- each shot area 48 is positioned using an alignment sensor. At this time, the alignment result is corrected by a predetermined amount (baseline amount). Then, by exposing the pattern area of the working reticle WR to the exposure light IL1, an image obtained by reducing the original pattern in the pattern area at a reduction magnification is exposed to the short area 44. After exposing a reduced image of the master pattern of the king reticle WR to each shot area on the wafer W in this manner, the wafer W is developed, and a process such as etching is performed. A circuit pattern of a certain layer of the semiconductor device is formed in each short region.
- a standard cell is a type of ASIC in which a device user designs circuits by arbitrarily combining circuit units (standard cells) prepared in advance by device manufacturers. What type of circuit unit can be selected It is up to the user to decide whether to use a single reticle or a completely different reticle pattern. That's why.
- each standard cell selected by a device user is required. Patterns (circuit units) of the cell itself are preliminarily formed on the mask reticles MR 1, MR 2, etc., and for each type, the master reticles MR 1, MR 2 are used.
- a standard cell (circuit pattern unit) selected by the device user can be selected and transferred to a substrate such as a single king reticle WR, WR1.
- the time required for drawing the original pattern of the working reticle conventionally performed by the electron beam lithography apparatus for each type is greatly reduced, and the time required for developing the device of each type is reduced. Significant shortening became possible.
- writing of the circuit pattern unit on each of the master-reticles MR 1 and MR 2 for manufacturing a working reticle can be performed by a high-throughput laser writing apparatus.
- the master reticle MR 1 and MR 2 need only be drawn once before the device manufacturer releases it to the device user as a standard cell (starts receiving orders). Therefore, the effect on the total throughput divided by the lead time is negligible.
- the time required to manufacture (exposure transfer) the master reticle MR 1 and MR 2 from the master reticle MR 1 and MR 2 is less than about 1 hour per working reticle.
- the time required to produce a working reticle is dramatically reduced.
- the method for manufacturing the working reticle according to this example is limited to the method in which a master reticle group is manufactured in advance as described above, and a part of the pattern is selected and transferred to the working reticle substrate. Rather, it is no problem to manufacture a part or all of the mass reticle newly for each device of the new type, and to manufacture a working reticle using this new master reticle. In this way, the variety The advantage is that it is possible to respond more flexibly to different wiring for each o
- one circuit pattern unit Pa, Pf, etc. is transferred to one master reticule MR 1 and MR 2. In some cases, it is difficult to form them all at once. In this case, as described in the first and second embodiments, the circuit pattern unit is divided and drawn into two or more masks and reticles, and the transfer to the one king reticle WR is performed. Needless to say, it is only necessary to splice them to form one circuit pattern unit.
- a batch exposure type (stepper type) projection exposure apparatus is used as an exposure apparatus for exposing a pattern of a mask reticle onto a substrate 50 for a working reticle WR. It is also possible to use a scanning exposure type projection exposure apparatus such as a step-and-scan method.
- reduced images of a plurality of parent patterns are connected and transferred on a working reticle substrate.
- the reduced images of the parent pattern are respectively transferred, and the two adjacent shot areas on the substrate have a straight line at the boundary, but are formed, for example, over the two short areas.
- the boundary may be made uneven so that the pattern to be formed does not exist as much as possible.
- the pattern extending over the two shot areas, that is, the connection portion of the reduced image of the parent pattern can be significantly reduced, and the manufacturing accuracy of the working reticle can be improved.
- An exposure method that does not make the boundary between two shot areas straight is described in, for example, Japanese Patent Application Laid-Open No.
- the projection optical system may be any one of a dioptric system composed of only a plurality of dioptric optical elements, a reflective system composed of only a plurality of reflective optical elements, and a catadioptric system combining a dioptric optical element and a reflective optical element.
- the catadioptric projection optical system includes at least a beam splitter and a concave mirror as a reflective optical element, an optical system having a concave mirror and a mirror without using a beam splitter as a reflective optical element, and As disclosed in US Pat. No. 5,778,229, a plurality of refractive optical elements and two reflecting optical elements (at least one of which is a concave mirror) are arranged on an optical axis extending straight without being bent. May be any of the optical systems arranged in the above.
- the disclosure of this U.S. patent is incorporated herein by reference, to the extent permitted by the laws designated in this international application or the laws of the selected elected country.
- the illumination condition that is, the intensity distribution of the exposure light on the Fourier transform plane (pupil plane) in the illumination optical system is changed by using an aperture stop or the like.
- At least one optical element disposed between the optical integrator and the optical integrator may be moved to change the intensity distribution of the illumination light on the incident surface of the optical integrator.
- a pair of conical prisms (axicons) are further disposed on the light source side than at least one of the optical elements, and the distance between the pair of axicons in the optical axis direction is adjusted, so that the optical integrator can be incident.
- the illumination light on the surface may be configured to be changeable into a ring shape in which the intensity distribution is higher outside the center than outside the center.
- a laser plasma light source or EUV (Extreme Ultra Violet) light with a wavelength of 13.4 nm or 11.5 nm, for example, a soft X-ray region (wavelength of about 5 to 15 nm) generated from SOR as exposure illumination light is used.
- the projection exposure apparatus to be used may be used as the above-described exposure apparatus for manufacturing a photomask.
- the reduction projection optical system is a reflection system including only a plurality of (about 3 to 6) reflection optical elements, and a reflection mask is used as a parent mask.
- an infrared or visible single wavelength laser oscillated from a DFB semiconductor laser or a fiber laser is amplified by a fiber amplifier doped with, for example, erbium (or both erbium and dittrium), and A harmonic converted into ultraviolet light using a nonlinear optical crystal may be used as illumination light for exposure.
- a fiber amplifier doped with, for example, erbium (or both erbium and dittrium) may be used as illumination light for exposure.
- the oscillation wavelength of a single-wavelength laser is in the range of 1.51 to 1.59 ⁇ m
- the 8th harmonic whose generation wavelength is in the range of 189 to 199 nm, or the generation wavelength is 15
- the 10th harmonic within the range of 1-159 nm is output.
- an 8th harmonic in the range of 193 to 194 nm that is, ultraviolet light having substantially the same wavelength as the ArF excimer laser can be obtained.
- a 10th harmonic within the range of 157 to 158 nm that is, ultraviolet light having substantially the same wavelength as that of the F2 laser can be obtained.
- a projection lithography apparatus for manufacturing devices using DUV light (far ultraviolet light) or VUV light (vacuum ultraviolet light) generally uses a transmission reticle, the working reticle substrate in each of the above-described embodiments is used.
- quartz glass examples thereof include quartz glass, quartz glass doped with fluorine, fluorite, magnesium fluoride, and quartz.
- EUV lithography systems use reflective masks
- proximity type X-ray lithography systems and mask projection type electron beam lithography systems use transmission type masks (stencil masks and membrane masks).
- a silicon wafer or the like is used as a substrate for the application.
- the projection optical system in which a plurality of optical elements are incorporated in the lens barrel and at least a part of the illumination optical system composed of a large number of optical elements (including optical integrators) are mounted on a frame.
- the gantry is supported by an anti-vibration device with three or four anti-vibration pads, fixed and placed on the base plate.
- the suspension W / 34255 c in which a plurality of optical elements are incorporated in the lens barrel and at least a part of the illumination optical system composed of a large number of optical elements (including optical integrators) are mounted on a frame.
- the gantry is supported by an anti-vibration device with three or four anti-vibration pads, fixed and placed on the base plate.
- the suspension W / 34255 c the suspension W / 34255 c.
- the present invention relates to a method and an apparatus for manufacturing a photomask used as an original pattern when a microdevice such as a semiconductor integrated circuit is manufactured using a lithography technique, and a method for manufacturing a device using such a photomask.
- the (first, second, and third) photomask manufacturing methods of the present invention since the patterns of a plurality of parent masks are each a part of a pattern obtained by enlarging a transfer pattern, for example, Using an electron beam lithography system or a laser beam lithography system, it is possible to draw with a small amount of drawing data and a small amount of drift in a short time.
- the drawing error of the parent mask is reduced by the reduction ratio of the pattern of the parent mask, a transfer pattern (original pattern) can be formed with high accuracy.
- these parent masks are manufactured once and can be used repeatedly, there is an advantage that individual master patterns can be formed with high accuracy and in a short time even when a large number of photomasks are manufactured.
- the patterns (or divided patterns) of the plurality of parent masks are patterns for transfer, or a part of the enlarged pattern, respectively.
- the patterning error of the pattern of the parent mask can be averaged by the number of times of multiple exposure by multiple exposure, so the position of the finally formed photomask pattern (original pattern)
- accuracy can be improved by greatly reducing errors and line width errors.
- the reduced image of the pattern (or divided pattern) of the parent mask is When exposure is performed by connecting the original patterns on a plate, the drawing error of the pattern of the parent mask and the like is reduced, so that the original pattern can be formed with higher accuracy.
- the pattern of at least one set of the plurality of parent masks among the patterns of the M sets of the plurality of parent masks is different from the pattern of another predetermined set of the plurality of parent masks, or
- at least one set of the plurality of parent mask patterns of the M sets of the plurality of parent mask patterns includes a joint region of another predetermined set of the plurality of parent mask patterns
- a batch exposure type reduction projection type exposure apparatus or a scanning exposure type reduction projection type is used depending on the use of the photomask.
- the expected imaging is performed.
- An error in image characteristics can be corrected.
- at least the non-rotationally symmetric aberration and the dispersion characteristic of the projection optical system of the projection exposure apparatus using the photomask are required.
- the imaging characteristics of the reduced image of the pattern of the parent mask are to be corrected accordingly, when the predetermined imaging characteristics of the projection optical system using the photomask have deteriorated, Since the imaging characteristics can be substantially corrected, the overlay accuracy and the like are improved.
- the pattern of the parent mask (or the divided pattern) will have a larger magnification than the pattern of the final manufactured device.
- the influence of a drawing error of an electronic beam drawing apparatus or the like that draws the pattern of the parent mask can be further reduced, and the pattern of the device can be formed with higher accuracy.
- the pattern unit images selected from the parent mask pattern are combined.
- various photomasks working reticles
- ASIC and system LSI electron beam lithography system
- the working reticle can be manufactured in a short time, there is an advantage that the development period of devices such as ASIC can be shortened.
- the photomask manufacturing method of the present invention can be implemented.
- the photomask manufacturing method of the present invention since the photomask manufacturing method of the present invention is used, a device pattern can be formed with higher accuracy.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU16893/99A AU1689399A (en) | 1997-12-25 | 1998-12-25 | Method and apparatus for manufacturing photomask and method of fabricating device |
EP98961560A EP1043625A4 (en) | 1997-12-25 | 1998-12-25 | METHOD AND APPARATUS FOR MANUFACTURING PHOTOMASK AND METHOD FOR MANUFACTURING THE APPARATUS |
US10/195,425 US6677088B2 (en) | 1997-12-25 | 2002-07-16 | Photomask producing method and apparatus and device manufacturing method |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9/356679 | 1997-12-25 | ||
JP35667997A JP2001092103A (ja) | 1997-12-25 | 1997-12-25 | フォトマスクの製造方法及び装置、並びにデバイスの製造方法 |
JP9/360027 | 1997-12-26 | ||
JP36002797A JP2001092104A (ja) | 1997-12-26 | 1997-12-26 | フォトマスクの製造方法、及びデバイスの製造方法 |
JP2535798A JP2001092108A (ja) | 1998-02-06 | 1998-02-06 | フォトマスクの製造方法及び装置、並びにデバイスの製造方法 |
JP10/25357 | 1998-02-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US60219300A Continuation | 1997-12-25 | 2000-06-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999034255A1 true WO1999034255A1 (fr) | 1999-07-08 |
Family
ID=27284985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1998/005912 WO1999034255A1 (fr) | 1997-12-25 | 1998-12-25 | Procede et appareil de fabrication de photomasque et procede de fabrication de l'appareil |
Country Status (6)
Country | Link |
---|---|
US (1) | US6677088B2 (ja) |
EP (1) | EP1043625A4 (ja) |
KR (1) | KR100536781B1 (ja) |
AU (1) | AU1689399A (ja) |
TW (1) | TW449672B (ja) |
WO (1) | WO1999034255A1 (ja) |
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Also Published As
Publication number | Publication date |
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US20020187406A1 (en) | 2002-12-12 |
KR100536781B1 (ko) | 2005-12-14 |
TW449672B (en) | 2001-08-11 |
KR20010033527A (ko) | 2001-04-25 |
US6677088B2 (en) | 2004-01-13 |
AU1689399A (en) | 1999-07-19 |
EP1043625A4 (en) | 2004-11-10 |
EP1043625A1 (en) | 2000-10-11 |
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