WO1998020541A1 - Method for forming bump and semiconductor device - Google Patents
Method for forming bump and semiconductor device Download PDFInfo
- Publication number
- WO1998020541A1 WO1998020541A1 PCT/JP1997/003925 JP9703925W WO9820541A1 WO 1998020541 A1 WO1998020541 A1 WO 1998020541A1 JP 9703925 W JP9703925 W JP 9703925W WO 9820541 A1 WO9820541 A1 WO 9820541A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bump
- forming
- substrate
- chip
- bumps
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 25
- 230000005484 gravity Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004696 Ti—Cu—Ni Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3468—Applying molten solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/044—Solder dip coating, i.e. coating printed conductors, e.g. pads by dipping in molten solder or by wave soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0545—Pattern for applying drops or paste; Applying a pattern made of drops or paste
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0736—Methods for applying liquids, e.g. spraying
- H05K2203/0746—Local treatment using a fluid jet, e.g. for removing or cleaning material; Providing mechanical pressure using a fluid jet
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/1581—Treating the backside of the PCB, e.g. for heating during soldering or providing a liquid coating on the backside
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/15—Position of the PCB during processing
- H05K2203/159—Using gravitational force; Processing against the gravity direction; Using centrifugal force
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
Definitions
- Patent application title Bump forming method and semiconductor device
- the present invention connects two boards with a pad (for example, a printed wiring board and a semiconductor chip), such as when mounting based on BGA technology or when performing flip chip mounting.
- the present invention relates to a method for forming a bump used for a semiconductor device, and a semiconductor device manufactured using the formed bump.
- BGA Bit Grid Array
- pads are formed on both a semiconductor chip and a printed wiring board, and these pads are joined via solder balls and gold balls called bumps.
- the mounting area is much smaller than when mounting by mounting pin-shaped terminals on a semiconductor chip or when performing COB (Chip On Board) mounting using a bonding wire. can do.
- bump forming methods used in mounting based on BGA technology, such as flip-chip mounting, a normal bump method, a transfer bump method, a ball bump method, and a mesa bump method.
- the bump method the upper surface of a semiconductor wafer is covered with a resist except for a portion where a bump is to be formed, and after forming a bump by plating, the resist is removed.
- the transfer bump method a bump is transferred and bonded to the tip of the inner lead, and the bump and the aluminum electrode of the semiconductor chip are positioned and heated and pressed.
- the ball bump method is The bump is attached to each pad by using a device for performing the key bonding.
- the mesa bump method is to integrally form the bump at the tip of the inner lead.
- the transfer bump method and the mesa bump method are: It assumes the use of inner leads and is not suitable for mounting based on BGA technology—flip chip mounting. Also, in the ball bump method, since bumps are attached to each pad in turn, there is a problem that as the number of pads increases, the mounting becomes more troublesome. On the other hand, the bump method usually has a problem in that the bumps are apt to vary in size and shape because the bumps are formed by plating. Disclosure of the invention
- the present invention has been made in view of the above points, and has as its object to provide a bump forming method capable of forming a bump of a desired size and shape without requiring a complicated process; It is to provide a semiconductor device manufactured by utilizing the above.
- the method of forming a bump according to the present invention includes a step of covering the upper surface of the first substrate with a resist except for a pad formation region, and a step of forming a resist with the surface covered with the resist of the first substrate facing downward. Spraying a conductive material toward the surface covered with the to form a substantially hemispherical bump in a pad formation region on the first substrate.
- a hemispherical bump is formed in the pad formation region by the effect of gravity by spraying a conductive material from below the pad formation region on the first substrate, and the complicated process can be performed. Bumps can be formed without the need.
- the method of forming a bump according to the present invention includes a step of forming a print pattern having a predetermined thickness by screen printing around the pad on the first substrate, and a step of deforming the print pattern using surface tension to obtain a substantially hemispherical shape. Forming the bumps in a shape of a circle. After a print pattern is formed around the pad on the first substrate by screen printing, this print pattern is deformed into a round shape due to surface tension, so a hemispherical bump is formed without using any special equipment. can do.
- the method of forming a bump according to the present invention includes the step of forming a bump having a predetermined thickness around the pad on the first substrate. Performing screen printing on the upper surface of the first substrate so that a printing pattern is formed; and printing the first substrate so that the shape of the printing pattern formed on the first substrate is substantially hemispherical. Leaving the surface on which the surface is formed down for a predetermined time. A print pattern is formed around the pad on the first substrate by screen printing, and the surface on which the print pattern is formed faces downward for a predetermined time, thereby easily forming a hemispherical bump by the action of gravity. can do. BRIEF DESCRIPTION OF THE FIGURES
- FIG. 1 is a diagram illustrating a method of forming a bump and a manufacturing process of a semiconductor device.
- FIG. 2 is a diagram illustrating the process of FIG. 1 (c) in detail.
- FIG. 3 is a diagram showing an example of a bump having a two-layer structure
- Fig. 4 is a diagram explaining the outline of screen printing
- FIG. 5 is a diagram showing the shape of a print pattern.
- FIG. 1 is a diagram for explaining a method of forming a bump and a manufacturing process of a semiconductor device.
- This figure shows an example of mounting a packaged semiconductor chip on a printed wiring board based on BGA technology.
- the pad formed in the package of the semiconductor chip and the printed wiring board This is to join the pad formed at this point via the bump.
- the printed wiring board described above corresponds to the first substrate
- the packaged semiconductor chip corresponds to the second substrate.
- pads 2 are formed on the printed wiring board 1 at the same intervals as the pads on the semiconductor chip.
- the upper surface of the printed wiring board 1 is covered with the resist 3 except for the pad formation region.
- the surface covered with the resist 3 of the printed wiring board 1 faces downward, and molten solder is sprayed from below the bumps 4 to form bumps 4 in the pad formation region.
- FIG. 2 is a diagram for explaining in detail the step of FIG. 1 (c).
- the printed wiring board 1 is placed on the belt conveyor 11 with the resist forming surface facing down. Mounted downward. Below the belt conveyor 11, a nozzle 12 for spraying molten solder is provided.
- molten solder is sprayed on the printed wiring board 1 that has passed above the nozzles 12.
- Solder does not adhere to the portion of the printed wiring board 1 covered with the resist 3, and the solder layer is formed only on the pad forming surface not covered with the resist 3.
- This solder layer becomes substantially hemispherical under the action of gravity and is used as the bump 4. Also, since a fixed amount of solder is always sprayed from the nozzles 12, the size of the bumps 4 becomes substantially uniform.
- the printed wiring board 1 on which the bumps 4 are formed is aligned with the pad 6 of the semiconductor chip 5 as shown in FIG. 1 (d), and then passed through a high-temperature furnace. As a result, as shown in FIG. 1 (e), the bumps 4 are melted, and the semiconductor chip 5 is joined to the printed wiring board 1 via the bumps 4.
- the solder layer is formed in the pad formation region by spraying the molten solder from below with the pad formation surface of the printed wiring board 1 facing downward. Under the action, an ideal hemispherical bump 4 is obtained. Therefore, the hemispherical bump 4 can be formed by a simple process without using a special device or the like.
- the solder since the portions other than the bump formation portions are covered with the resist 3, the solder does not adhere to unnecessary portions. Furthermore, since a fixed amount of molten solder is sprayed from the nozzles 12 while moving the printed wiring board 1 at a constant speed, variations in the size and shape of the bumps 4 can be eliminated. Further, if a plurality of printed wiring boards 1 are placed on the belt conveyor 11 at regular intervals, bumps 4 of the same shape can be formed on the plurality of printed wiring boards 1 in a short time, and the production efficiency is improved.
- the material sprayed from the nozzle 12 is not limited to the above-described molten solder, and various materials having excellent adhesiveness and conductivity (eg, gold) can be used.
- the bumps 4 described above may be formed by spraying two or more kinds of substances.
- FIG. 3 shows an example in which the pump 4 has a two-layer structure, in which an upper solder layer 4a that melts at a low temperature and a lower solder layer 4b that melts at a high temperature are formed. With such a structure, electrical contact with the semiconductor chip 5 is ensured when the upper solder layer 4a is melted.
- the adhesiveness of the bumps 4 can be increased as compared with the case where the bumps 4 have a single-layer structure.
- the bumps 4 have a multilayer structure
- different materials may be sprayed from one nozzle 12 or two or more nozzles 12 may be provided.
- a plurality of nozzles 12 may be arranged in a line, and the same amount of molten solder may be sprayed from each nozzle 12 at the same time.
- the bumps 4 are formed by screen printing.
- FIG. 4 is a diagram for explaining the outline of screen printing.
- a screen mask 21 on which the shape of the bump 4 is drawn is arranged above the printed wiring board 1. Both ends of the screen mask 21 are supported by the screen frame 22.
- the screen mask 21 is placed in close contact with the upper surface of the printed wiring board 1, and when the squeegee 23 is released, the original is removed. Return to the position (dotted line position shown).
- the printing surface is left for a predetermined time before the printing pattern 25 dries.
- the print pattern 25 is hemispherical and solidified under the action of gravity, and the bump 4 is completed.
- the bumps 4 are formed using screen printing, variations in the sizes of the bumps 4 can be eliminated. Further, unlike the first embodiment, since the process of forming a pad registry on the printed wiring board 1 is not required, the manufacturing process can be further simplified. When performing screen printing, as shown in Fig. 5, if the print pattern 25 is formed wider and thicker than the size of the bump 4, even if the print pattern 25 shrinks due to surface tension, the area of the Can be about the same as 4. In addition, since the surface is deformed into a round shape as shown by a dotted line due to surface tension, the printed surface does not need to face downward, and the manufacturing process can be further simplified. Alternatively, the bumps 4 may be formed using both surface tension and gravity.
- the bumps 4 may be formed on the pads of the semiconductor chip 5.
- the bump forming method in the case of mounting based on the BGA technology has been described.
- a so-called flip chip in which a bare chip cut out from a semiconductor wafer is mounted on the printed wiring board 1 is described.
- This embodiment is also applicable when forming the bumps 4 used for mounting.
- the size of the bumps 4 must be smaller than in the case of mounting using BGA technology. It is necessary to change the pattern shape of 1.
- the material of the pad formed on the bare chip is generally aluminum-polysilicon or the like. Solder does not easily adhere to these materials, so the surface of the pad must have good adhesion, mutual diffusion, and solder wetting.
- the considered intermediate metal layer must be formed in advance prior to the process of spraying the molten solder.
- a metal surface layer to which solder such as copper or gold is likely to adhere is formed by plating or vapor deposition.
- a surface layer such as Cr—Cu—Au, TiW—Cu, Ti—Cu—Ni, or A1 / Ni_Ni_Cu is formed.
- Such a surface layer is also effective when the bumps 4 are formed on a printed wiring board or the like on which a pad to which solder or the like is unlikely to adhere is formed.
- bumps 4 may be formed on the semiconductor wafer before cutting the semiconductor wafer, and then cut into individual chips after the bumps are formed.
- the registration of the first substrate is performed from below the first substrate. Since an electrically conductive material is sprayed onto the surface covered with the strut to form a bump, an ideal hemispherical bump can be formed by the action of gravity. In addition, if the conductive material is sprayed while the first substrate is being conveyed, the conductive material can be sprayed uniformly on the first substrate, and variations in bump size and shape can be suppressed. Further, by spraying two or more kinds of conductive materials, a bump having a multilayer structure can be easily formed. Therefore, it is easy to adopt a structure in which the upper layer side of the bump melts at a lower temperature than the lower layer side, and the adhesion of the bump can be improved.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69737939T DE69737939T2 (de) | 1996-11-06 | 1997-10-29 | Verfahren zur herstellung von höcker und halbleiteranordnung |
EP97909671A EP0949668B1 (en) | 1996-11-06 | 1997-10-29 | Method for forming bump and semiconductor device |
US09/284,616 US6383891B1 (en) | 1996-11-06 | 1997-10-29 | Method for forming bump and semiconductor device |
JP52120998A JP3983300B2 (ja) | 1996-11-06 | 1997-10-29 | バンプの形成方法 |
AU47252/97A AU4725297A (en) | 1996-11-06 | 1997-10-29 | Method for forming bump and semiconductor device |
HK00102755A HK1023649A1 (en) | 1996-11-06 | 2000-05-08 | Method for forming bump and semiconductor device. |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31006096 | 1996-11-06 | ||
JP8/310060 | 1996-11-06 | ||
JP5237397 | 1997-02-20 | ||
JP9/52373 | 1997-02-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998020541A1 true WO1998020541A1 (en) | 1998-05-14 |
Family
ID=26392985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1997/003925 WO1998020541A1 (en) | 1996-11-06 | 1997-10-29 | Method for forming bump and semiconductor device |
Country Status (9)
Country | Link |
---|---|
EP (1) | EP0949668B1 (ja) |
JP (1) | JP3983300B2 (ja) |
KR (1) | KR100368946B1 (ja) |
CN (1) | CN1153266C (ja) |
AU (1) | AU4725297A (ja) |
DE (1) | DE69737939T2 (ja) |
HK (1) | HK1023649A1 (ja) |
TW (1) | TW354412B (ja) |
WO (1) | WO1998020541A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005051346B4 (de) * | 2005-10-25 | 2011-02-10 | Thallner, Erich, Dipl.-Ing. | Träger für einen Wafer, Kombination aus einem Träger und einem Wafer sowie Verfahren zur Handhabung des Trägers |
CN104078367B (zh) * | 2013-03-29 | 2017-10-13 | 天水天光半导体有限责任公司 | 一种倒扣封装肖特基二极管凸点的制作工艺 |
CN106170850A (zh) * | 2014-01-09 | 2016-11-30 | 汉高股份有限及两合公司 | 制备半导体封装的方法、以及非接触式向上喷射系统在制备半导体封装中的用途 |
KR101582243B1 (ko) | 2014-05-09 | 2016-01-04 | 주식회사 에이앤에스월드 | 엘이디 프레임의 솔더 범프 형성용 마스크 클리너장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0374852A (ja) * | 1989-08-17 | 1991-03-29 | Canon Inc | 電極端子の相互接続方法及び電気接続構造体の製造方法 |
JPH06188290A (ja) * | 1992-09-03 | 1994-07-08 | American Teleph & Telegr Co <Att> | マルチチップモジュールをアセンブルするための方法及び装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4568012A (en) * | 1982-01-14 | 1986-02-04 | Toshiba Seiki Co., Ltd. | Soldering apparatus |
JPS5958843A (ja) * | 1982-09-28 | 1984-04-04 | Sharp Corp | フリツプチツプ用バンプ製造方法 |
JPH02159094A (ja) * | 1988-12-12 | 1990-06-19 | Rohm Co Ltd | 印刷配線基板装置 |
JP3156483B2 (ja) * | 1994-01-11 | 2001-04-16 | 松下電器産業株式会社 | バンプの形成方法 |
JPH08181142A (ja) * | 1994-12-26 | 1996-07-12 | Fujitsu Ltd | はんだバンプの製造方法 |
-
1997
- 1997-10-29 KR KR10-1999-7003761A patent/KR100368946B1/ko not_active IP Right Cessation
- 1997-10-29 EP EP97909671A patent/EP0949668B1/en not_active Expired - Lifetime
- 1997-10-29 CN CNB971994900A patent/CN1153266C/zh not_active Expired - Fee Related
- 1997-10-29 JP JP52120998A patent/JP3983300B2/ja not_active Expired - Fee Related
- 1997-10-29 WO PCT/JP1997/003925 patent/WO1998020541A1/ja active IP Right Grant
- 1997-10-29 DE DE69737939T patent/DE69737939T2/de not_active Expired - Lifetime
- 1997-10-29 AU AU47252/97A patent/AU4725297A/en not_active Abandoned
- 1997-11-04 TW TW086116370A patent/TW354412B/zh not_active IP Right Cessation
-
2000
- 2000-05-08 HK HK00102755A patent/HK1023649A1/xx not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0374852A (ja) * | 1989-08-17 | 1991-03-29 | Canon Inc | 電極端子の相互接続方法及び電気接続構造体の製造方法 |
JPH06188290A (ja) * | 1992-09-03 | 1994-07-08 | American Teleph & Telegr Co <Att> | マルチチップモジュールをアセンブルするための方法及び装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP0949668A4 * |
Also Published As
Publication number | Publication date |
---|---|
CN1236484A (zh) | 1999-11-24 |
AU4725297A (en) | 1998-05-29 |
HK1023649A1 (en) | 2000-09-15 |
JP3983300B2 (ja) | 2007-09-26 |
DE69737939T2 (de) | 2008-04-03 |
EP0949668A1 (en) | 1999-10-13 |
KR100368946B1 (ko) | 2003-01-24 |
TW354412B (en) | 1999-03-11 |
KR20000052897A (ko) | 2000-08-25 |
EP0949668A4 (en) | 2000-03-15 |
DE69737939D1 (de) | 2007-08-30 |
EP0949668B1 (en) | 2007-07-18 |
CN1153266C (zh) | 2004-06-09 |
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