WO1995020642A1 - Agent nettoyant et procede de nettoyage - Google Patents
Agent nettoyant et procede de nettoyage Download PDFInfo
- Publication number
- WO1995020642A1 WO1995020642A1 PCT/JP1995/000086 JP9500086W WO9520642A1 WO 1995020642 A1 WO1995020642 A1 WO 1995020642A1 JP 9500086 W JP9500086 W JP 9500086W WO 9520642 A1 WO9520642 A1 WO 9520642A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- surfactant
- general formula
- concentration
- acid
- cleaning
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000004094 surface-active agent Substances 0.000 claims abstract description 28
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000003599 detergent Substances 0.000 claims description 13
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 15
- 239000010419 fine particle Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- 230000003405 preventing effect Effects 0.000 description 10
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/004—Surface-active compounds containing F
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Definitions
- the present invention relates to a cleaning agent and a cleaning method for cleaning a surface of a semiconductor substrate such as a silicon wafer in a semiconductor device manufacturing process or the like. More specifically, the present invention relates to a cleaning agent and a cleaning method which are excellent in preventing contamination by fine particles on the surface of a silicon wafer or the like. More specifically, the present invention relates to a cleaning agent and a cleaning method for removing a natural oxide film having a thickness of about 10 A, which is usually present on the surface of a silicon wafer or the like, and for preventing contamination by fine particles present in a cleaning solution.
- Sulfuric acid as the chemical solution used for Uetsuto cleaning (H 2 S 0 4) - hydrogen peroxide (H 2 0 2) solution, hydrochloric acid (H C1) - Hydrogen peroxide ( ⁇ 2 0 2) an aqueous solution or hydrofluoric acid (HF) - Hydrogen peroxide ( ⁇ 2 0 2) solution, hydrofluoric acid (HF) - nitrate (HN 0 3) - ⁇ (CH 3 CO OH) solution, ammonia (NH 4 OH) - hydrogen peroxide A (H 2 0 2 ) aqueous solution, a liquid using an aqueous solution of hydrofluoric acid, and the like are generally used.
- Japanese Unexamined Patent Publication No. 3-53083 discloses that an aqueous solution of hydrofluoric acid or the like is added with a short-molecule-length surfactant having 5 to 8 carbon atoms.
- a method for preventing metal contamination of a semiconductor element characterized by the following is described.
- surfactant used in this method CxHyC O OH, CxHyS 0 3 H, CxFyC shed ⁇ , CxFy S 0 3 H ( x is 4-7 integer, y is 9-1 5 integer) is represented by Carboxylic acid or sulfonic acid or its salts, but there is no further detailed description, and there is no description about its salts.
- the material in JP-5- 1 3 8 1 4 2 No. capable of controlling the zeta potential of particles in solution (surface conductive position), 1 0 in the solution - adding a concentration in the range of 7 to 2 5 vol%
- a technique for controlling the adhesion of fine particles in a liquid which is characterized by preventing or reducing the adhesion of the fine particles, which are to be adsorbed, in a solution by adding A cleaning method for preventing or reducing the adhesion of fine particles to the surface is disclosed.
- the substance capable of controlling the zeta potential is a very vague expression such as a substance having a hydrophilic group and a hydrophobic group in the molecule, and specific examples thereof include alcohol, glycol, amine, and amide in column 4.
- Example 3 Amino acids, aldehydes, organic acids, esters, ketones, and nonionic surfactants.
- HF hydrofluoric acid
- Japanese Patent Application Laid-Open No. 5-67001 also describes a technique very similar to the above-mentioned Japanese Patent Application Laid-Open No. 5-138182, except that the latter particles adhere to foreign matters.
- the same technology is shown, but the substance that can control the zeta potential is exactly the same.
- An object of the present invention is to clean a surface of a silicon wafer or the like which has a very remarkable effect of preventing the adhesion of fine particles by using a surfactant having a specific structure in a specific composition, which is not clearly recognized in these conventional techniques. It is to provide an agent and a cleaning method.
- the present invention relates to a surfactant of the following general formula (1) at a concentration of 0.1 to 4% by weight of fuchydrosidic acid, a concentration of 50 to 150 ppm, or a general formula (2) or (
- the present invention also relates to a detergent and a washing method using the detergent, characterized in that the detergent is made of water, and the surfactant is 3).
- Rf represents a fluorine-containing hydrocarbon group having 5 to 9 carbon atoms.
- Rf ′ is a fluorinated hydrocarbon group having a carbon purple number of 5 to 15, R is hydrogen or an alkynole group having 1 to 4 carbon atoms, and n is 5 to _20.
- the present invention uses at least one compound selected from the group consisting of hydrogen peroxide, hydrochloric acid, nitric acid, acetic acid, sulfuric acid and phosphoric acid together with or instead of the above-mentioned hydrofluoric acid.
- the present invention relates to a cleaning agent and a cleaning method using the same.
- the specific surfactant used in the present invention and a detergent comprising a specific composition containing the same are specifically disclosed in JP-A-3-53083, JP-A-5-138142 and JP-A-5-67601.
- the surfactant having a specific structure of the present invention is used in a specific composition, compared with the free sulfonic acid type disclosed in the same publication, the particles are much more excellent. Has an adhesion preventing effect.
- surfactant of the general formula (1) used in the present invention examples include, for example,
- surfactant of the general formula (2) used in the present invention examples include, for example,
- surfactant of the general formula (3) used in the present invention examples include, for example,
- the surfactant when the surfactant is a compound represented by the general formula (1), the surfactant is added in an amount of 50 to L 50 O pm as a concentration in the detergent, preferably 200 to 60 OP pm. .
- the concentration in the detergent is 50 to L00000 ppm, preferably 300 to 5000 Oppm. the above If the concentration is lower than the above, there is no effect of preventing the adhesion of fine particles, and if the concentration exceeds the above range, the effect is not improved, but rather, it does not tend to be dissolved.
- the concentration of hydrofluoric acid in the detergent is 0.1 to 4% by weight, preferably 0.2 to 1.5% by weight. If the concentration is lower than the above, it takes time to remove the natural oxide film. If the concentration is higher than the above, the effect of preventing the adhesion of particles tends to be lost.
- hydrogen peroxide when it is necessary to remove metal contaminants from the surface of the silicon wafer, hydrogen peroxide can be added together with or instead of hydrofluoric acid.
- hydrochloric acid, nitric acid, acetic acid, sulfuric acid or phosphoric acid can be used.
- the amount used is preferably, for example, about 0.1 to 30% by weight in the detergent.
- C 7 F 15 COONH 4 is particularly preferred, and the compound of the general formula (2)! Of the compounds, C 9 F 17 0 (CH 2 CH 2 0) niCH 3 Cm is 5 to _2
- the natural oxide film of the 4-inch silicon wafer was removed with a 0.5% HF aqueous solution and rinsed with ultrapure water.
- Five silicon wafers was added polystyrene latex having a particle size of about 0.6 as standard fine particles 0.5% HF aqueous solution so that the number of particles is 10 5 ZML, further various surfactants shown in Table 1 It was immersed in a treatment solution prepared by adding a predetermined amount for 10 minutes. After rinsing with ultrapure water and drying, the number of fine particles adhering to the silicon wafer surface was measured using a laser surface inspection device (LS-5000, manufactured by Hitachi Electronics Engineering). Table 1 shows the average value of the number of fine particles. Table 1 also shows the results obtained with the comparative treatment solution prepared in the same manner as in the examples. ⁇ table 1 ⁇
- the number of fine particles adhering to the silicon wafer surface was measured in the same manner as in Example 1 except that the surfactant and dilute hydrofluoric acid shown in Table 3 were used. Table 3 shows the results.
- Example 4 The procedure was performed in the same manner as in Example 1 except that the surfactants shown in Table 4 (average value of 17) were used, and the number of particles adhering to the surface of the silicon wafer was measured to obtain OC. Table 4 shows the results.
- a surfactant having a specific structure in a specific composition by using a surfactant having a specific structure in a specific composition, a cleaning agent and a cleaning method for a surface of a silicon wafer or the like having an extremely remarkable effect of preventing adhesion of fine particles can be obtained.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95906520A EP0742282A4 (en) | 1994-01-26 | 1995-01-25 | CLEANING AGENTS AND METHODS |
KR1019960703441A KR0177568B1 (ko) | 1994-01-26 | 1995-01-25 | 세정제 및 세정방법 |
US08/682,590 US5763375A (en) | 1994-01-26 | 1995-01-25 | Cleaning agents and cleaning method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6024850A JPH07216392A (ja) | 1994-01-26 | 1994-01-26 | 洗浄剤及び洗浄方法 |
JP6/24850 | 1994-01-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1995020642A1 true WO1995020642A1 (fr) | 1995-08-03 |
Family
ID=12149696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1995/000086 WO1995020642A1 (fr) | 1994-01-26 | 1995-01-25 | Agent nettoyant et procede de nettoyage |
Country Status (6)
Country | Link |
---|---|
US (1) | US5763375A (ja) |
EP (1) | EP0742282A4 (ja) |
JP (1) | JPH07216392A (ja) |
KR (1) | KR0177568B1 (ja) |
CN (1) | CN1076396C (ja) |
WO (1) | WO1995020642A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997024290A1 (en) * | 1995-12-27 | 1997-07-10 | Buckman Laboratories International, Inc. | Methods and compositions for controlling biofouling using fluorosurfactants |
US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08195369A (ja) * | 1995-01-13 | 1996-07-30 | Daikin Ind Ltd | 基板の洗浄方法 |
KR100248113B1 (ko) * | 1997-01-21 | 2000-03-15 | 이기원 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
JP3003684B1 (ja) * | 1998-09-07 | 2000-01-31 | 日本電気株式会社 | 基板洗浄方法および基板洗浄液 |
US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
KR100433059B1 (ko) * | 2001-08-10 | 2004-05-31 | 조헌영 | 석조 문화재 세척용 세정제 제조방법 |
WO2004019134A1 (ja) * | 2002-08-22 | 2004-03-04 | Daikin Industries, Ltd. | 剥離液 |
US7267726B2 (en) * | 2003-04-22 | 2007-09-11 | Texas Instruments Incorporated | Method and apparatus for removing polymer residue from semiconductor wafer edge and back side |
JP4498726B2 (ja) | 2003-11-25 | 2010-07-07 | Kisco株式会社 | 洗浄剤 |
KR100588217B1 (ko) * | 2004-12-31 | 2006-06-08 | 동부일렉트로닉스 주식회사 | 반도체 소자의 게이트 산화막 형성 방법 |
EP1909309A4 (en) * | 2005-07-22 | 2010-10-20 | Sumco Corp | METHOD OF MANUFACTURING A SIMOX WAFER AND SIMOX WAFER MANUFACTURED ACCORDING TO SUCH A METHOD |
KR100734274B1 (ko) * | 2005-09-05 | 2007-07-02 | 삼성전자주식회사 | 기판 세정용 조성물을 이용한 게이트 형성 방법 |
JP5428200B2 (ja) | 2007-05-18 | 2014-02-26 | 三菱化学株式会社 | 半導体デバイス用基板洗浄液、半導体デバイス用基板の洗浄方法及び半導体デバイス用基板の製造方法 |
TWI591158B (zh) * | 2008-03-07 | 2017-07-11 | 恩特葛瑞斯股份有限公司 | 非選擇性氧化物蝕刻濕清潔組合物及使用方法 |
CN102969221A (zh) * | 2011-08-31 | 2013-03-13 | 上海华力微电子有限公司 | 减少水痕缺陷的晶片清洗方法及半导体器件制造方法 |
CN104498912A (zh) * | 2014-12-01 | 2015-04-08 | 中核(天津)科技发展有限公司 | 环保型薄壁异形管件表面处理液及管件处理工艺 |
CN104630776A (zh) * | 2015-02-11 | 2015-05-20 | 佛山市顺德区宝铜金属科技有限公司 | 一种金属制品清洁光亮剂 |
CN105386066B (zh) * | 2015-12-21 | 2018-07-06 | 黄志华 | 一种碳钢酸洗液及其应用 |
CN107164109A (zh) * | 2017-03-31 | 2017-09-15 | 吴江创源新材料科技有限公司 | 一种蓝宝石晶片退火前清洗液及其制备方法和清洗工艺 |
CN109530374B (zh) * | 2018-11-21 | 2021-07-27 | 上海超硅半导体有限公司 | 一种晶圆盒清洗方法 |
Citations (6)
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JPH0353083A (ja) * | 1989-07-20 | 1991-03-07 | Morita Kagaku Kogyo Kk | 半導体素子の金属汚染を防止する方法 |
JPH05129264A (ja) * | 1991-11-07 | 1993-05-25 | Hitachi Ltd | 洗浄液および洗浄方法 |
JPH05138142A (ja) * | 1990-08-20 | 1993-06-01 | Hitachi Ltd | 液中微粒子付着制御法 |
JPH0641770A (ja) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | シリコンウエハ表面の処理方法 |
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JPH06232107A (ja) * | 1993-02-04 | 1994-08-19 | Hashimoto Chem Corp | 微細加工表面処理剤 |
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US3715250A (en) * | 1971-03-29 | 1973-02-06 | Gen Instrument Corp | Aluminum etching solution |
JPS5129264A (en) * | 1974-06-28 | 1976-03-12 | Nisshin Flour Milling Co | Seika seipanyoreitokijino seizoho |
JPS5138142A (ja) * | 1974-09-26 | 1976-03-30 | Taiheiyo Kogyo Kk | |
US4140709A (en) * | 1975-03-21 | 1979-02-20 | Diamond Shamrock Corporation | Anionic fluorochemical surfactants |
DE2963487D1 (en) * | 1978-08-04 | 1982-09-30 | Cbs Records | Composition for cleaning and surface treatment of phonograph records and similar objects and its use |
US4302348A (en) * | 1980-09-23 | 1981-11-24 | The Drackett Company | Hard surface cleaning compositions |
JPS6039176A (ja) * | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
US4711256A (en) * | 1985-04-19 | 1987-12-08 | Robert Kaiser | Method and apparatus for removal of small particles from a surface |
US4752505A (en) * | 1987-01-13 | 1988-06-21 | Hewlett-Packard Company | Pre-metal deposition cleaning for bipolar semiconductors |
US5169680A (en) * | 1987-05-07 | 1992-12-08 | Intel Corporation | Electroless deposition for IC fabrication |
US5277835A (en) * | 1989-06-26 | 1994-01-11 | Hashimoto Chemical Industries Co., Ltd. | Surface treatment agent for fine surface treatment |
TW274630B (ja) * | 1994-01-28 | 1996-04-21 | Wako Zunyaku Kogyo Kk | |
US5681398A (en) * | 1995-03-17 | 1997-10-28 | Purex Co., Ltd. | Silicone wafer cleaning method |
JP3053083B2 (ja) * | 1998-09-16 | 2000-06-19 | 株式会社クボタ | 苗植付装置 |
-
1994
- 1994-01-26 JP JP6024850A patent/JPH07216392A/ja active Pending
-
1995
- 1995-01-25 EP EP95906520A patent/EP0742282A4/en not_active Withdrawn
- 1995-01-25 KR KR1019960703441A patent/KR0177568B1/ko not_active IP Right Cessation
- 1995-01-25 US US08/682,590 patent/US5763375A/en not_active Expired - Fee Related
- 1995-01-25 WO PCT/JP1995/000086 patent/WO1995020642A1/ja not_active Application Discontinuation
- 1995-01-25 CN CN95191326A patent/CN1076396C/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0353083A (ja) * | 1989-07-20 | 1991-03-07 | Morita Kagaku Kogyo Kk | 半導体素子の金属汚染を防止する方法 |
JPH05138142A (ja) * | 1990-08-20 | 1993-06-01 | Hitachi Ltd | 液中微粒子付着制御法 |
JPH05129264A (ja) * | 1991-11-07 | 1993-05-25 | Hitachi Ltd | 洗浄液および洗浄方法 |
JPH0641770A (ja) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | シリコンウエハ表面の処理方法 |
JPH0684866A (ja) * | 1992-09-04 | 1994-03-25 | Hitachi Ltd | 異物付着防止方法 |
JPH06232107A (ja) * | 1993-02-04 | 1994-08-19 | Hashimoto Chem Corp | 微細加工表面処理剤 |
Non-Patent Citations (1)
Title |
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See also references of EP0742282A4 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997024290A1 (en) * | 1995-12-27 | 1997-07-10 | Buckman Laboratories International, Inc. | Methods and compositions for controlling biofouling using fluorosurfactants |
US5879623A (en) * | 1995-12-27 | 1999-03-09 | Buckman Laboratories International Inc. | Methods and compositions for controlling biofouling using fluorosurfactants |
US6277203B1 (en) | 1998-09-29 | 2001-08-21 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
US6319330B1 (en) | 1998-09-29 | 2001-11-20 | Lam Research Corporation | Method and apparatus for cleaning low K dielectric and metal wafer surfaces |
Also Published As
Publication number | Publication date |
---|---|
EP0742282A4 (en) | 1999-04-28 |
KR0177568B1 (ko) | 1999-03-20 |
CN1140467A (zh) | 1997-01-15 |
US5763375A (en) | 1998-06-09 |
CN1076396C (zh) | 2001-12-19 |
JPH07216392A (ja) | 1995-08-15 |
EP0742282A1 (en) | 1996-11-13 |
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