US9653306B2 - Method for forming crystalline cobalt silicide film - Google Patents

Method for forming crystalline cobalt silicide film Download PDF

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US9653306B2
US9653306B2 US13/518,986 US201013518986A US9653306B2 US 9653306 B2 US9653306 B2 US 9653306B2 US 201013518986 A US201013518986 A US 201013518986A US 9653306 B2 US9653306 B2 US 9653306B2
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film
layer
silicon
cobalt silicide
crystalline
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Tatsuya Shimoda
Yasuo Matsuki
Ryo Kawajiri
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JSR Corp
Japan Science and Technology Agency
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide

Definitions

  • the present invention primarily relates to a method for forming a crystalline cobalt silicide film, and secondarily relates to a method for forming a two-layer film produced during the process of forming the crystalline cobalt silicide film.
  • a surface of a silicon layer is modified with a silicide of other kinds of metals such as Co, Ni, Au, Ag, Ti, Pd and Al so as to form an ohmic contact by a work function of an interface between a wiring metallic material and silicon.
  • a crystalline cobalt silicide is suitable as this silicide from the viewpoint of specific resistance of the silicide per se and matching of a lattice constant with silicon (JP 8-116054 A).
  • a process for forming a cobalt silicide is commonly carried out by a method in which a vacuum process is used in any step in the process.
  • a method for forming a cobalt silicide using a vacuum process for example, a solid-phase growth method (S. Saitoh et al., Appl. Phys. Lett. 37, 203 (1980)), a molecular beam epitaxy method (J. C. Bean et al., Appl. Phys. Lett. 37, 643 (1980)), an ion implantation method (A. E. White et al., Appl. Phys. Lett. 50, 95 (1987)) and the like.
  • JP 2003-313299A a technique in which a liquid composition is applied on a substrate to form a coated film, and then the coated film is heated to form a cobalt-silicon alloy film.
  • This technology is an excellent technology which can form a cobalt-silicon alloy film by a simple method without using a vacuum process.
  • the cobalt-silicon alloy film formed by this technology is mainly intended to be used as a wiring material having arbitrary resistance, and crystallization of the film is not taken into consideration.
  • a method for forming a crystalline cobalt silicide in a simple manner, which can be employed as an electrode material in a semiconductor device and the like, is still unknown.
  • the present invention has been made in light of the above-mentioned circumstances, and an object thereof is to provide a method for forming a film made of a crystalline cobalt silicide in a simple manner.
  • the above object of the present invention is achieved by a method for forming a crystalline cobalt silicide film, comprising the steps of:
  • the two-layer film per se is industrially useful since it is excellent in conductivity, and it can be used as various conductive films even in a state of a two-layer film without removal of the second layer.
  • FIG. 1 is a TEM image of a cross section of a two-layer film formed on a silicon substrate in Example 1, in which FIG. 1( a ) is an image at a magnification of 50,000 times and FIG. 1( b ) is an image at a magnification of 500,000 times.
  • FIG. 2 is an EDX spectrum of a two-layer film formed on a silicon substrate in Example 1, in which FIG. 2( a ) is an EDX spectrum of a first layer and FIG. 2( b ) is an EDX spectrum of a second layer.
  • FIG. 3 is an electron diffraction image of a two-layer film formed on a silicon substrate in Example 1, in which FIG. 3( a ) is an electron diffraction image of a first layer and FIG. 3( b ) is an electron diffraction image of a blackish portion in a TEM image of a second layer.
  • FIG. 5 is a cross-sectional SEM image before and after chemical mechanical polishing in Example 5, in which FIG. 5( a ) is a cross-sectional SEM image before chemical mechanical polishing and FIG. 5( b ) is a cross-sectional SEM image after chemical mechanical polishing.
  • FIG. 6 shows a cross-section TEM image of a film formed in Reference Example 1.
  • FIG. 7 is a resist pattern formed on a silicon substrate in Example 6, in which FIG. 7( a ) is a view showing the whole region of a resist pattern and FIG. 7( b ) is a partially enlarged view of the region surrounded by the dashed line in FIG. 7( a ) .
  • FIG. 8 is an optical micrograph of a patterned film formed in Example 6.
  • the surface made of silicon to which the below-mentioned composition is applied can include, for example, a surface of a silicon substrate, and may also be a surface of a silicon film formed on a substrate made of other materials.
  • materials constituting the substrate include, for example, glasses, metals, plastics, ceramics and the like. Specific examples of these materials include glasses such as quartz glass, borosilicate glass, soda glass and lead glass; metals such as gold, silver, copper, nickel, aluminum, iron, and alloys containing these metals; and plastics such as polyimides and polyether sulfones. Known methods can be employed to form a silicon film on these substrates.
  • the film can be formed by a vacuum process such as a heat CVD method or a plasma CVD method, and a method using a liquid silicon precursor composition as disclosed, for example, in JP 2003-313299 A.
  • the thickness of a silicon film formed on the substrate is preferably 5 nm or more.
  • the cobalt silicide in the first layer formed on a surface made of silicon by the method of the present invention when the silicon of the lower layer has crystallinity, it undergoes crystal growth along its crystal direction. Accordingly, in order to form a highly crystallized cobalt silicide film, silicon having high crystallinity may be used as silicon of the lower layer. From such a viewpoint, the surface made of silicon is preferably a surface of single crystal silicon, and particularly preferably a surface of a single crystal silicon substrate.
  • a composition to be applied on the surface made of silicon as mentioned above is a composition obtained by mixing a compound represented by the above-mentioned formula (1A) or (1B) or a polymer thereof with a zero-valent cobalt complex.
  • silane compound As used herein, compounds represented by the formula (1A) (linear silane compounds) and compounds represented by the formula (1B) (cyclic silane compounds) as well as polymers obtained by polymerizing one or more kinds of these compounds (higher-order silane compounds) are collectively referred to as “silane compound” hereinafter.
  • composition obtained by mixing means that the above composition includes, in addition to the case where it respectively contains a silane compound and a zero-valent cobalt complex, the case where it contains chemical species produced by the reaction of a silane compound with a zero-valent cobalt complex. It is well known that, when a silane compound is in contact with a cobalt complex, a reaction between these compounds gradually proceeds to form chemical species having a Si—Co bond. In the present invention, no effect of the present invention is impaired even if such a reaction arises after preparation of the composition, and a good-quality crystalline cobalt silicide film can be obtained even if a composition containing such chemical species is used as it is.
  • each halogen atom represented by X in the formulas (1A) and (1B) examples include a chlorine atom, bromine atom and the like.
  • X is preferably a hydrogen atom.
  • linear silane compounds represented by the formula (1A) include monosilane, disilane, trisilane, n-butasilane, n-pentasilane, iso-pentasilane, neo-pentasilane, n-hexasilane, n-heptasilane, n-octasilane, n-nonasilane, octachlorotrisilane, octabromotrisilane and the like.
  • n in the above formula (1A) is preferably an integer of 3 to 9.
  • cyclic silane compounds represented by the formula (1B) include cyclotrisilane, cyclotetrasilane, cyclopentasilane, silylcyclotrisilane, silylcyclotetrasilane, silylcyclopentasilane, cyclohexasilane, cycloheptasilane, cyclooctasilane and the like.
  • m in the formula (1B) is preferably an integer of 3 to 8.
  • Higher-order silane compounds in the present invention are polymers obtained by polymerizing one or more kinds of linear silane compounds represented by the formula (1A) and cyclic silane compounds represented by the formula (1B).
  • Examples of the polymerization method thereof include photopolymerization, thermal polymerization and the like, and photopolymerization is preferably used.
  • the photopolymerization can be carried out by irradiating one or more kind of the linear silane compounds and cyclic silane compounds with light.
  • light for irradiation it is possible to use visible light, ultraviolet light, far-ultraviolet light; light from a low-pressure or high-pressure mercury lamp; deuterium lamp or discharge light of noble gases such as argon, krypton and xenon; and YAG laser, argon laser, carbon dioxide laser, excimer laser of XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, and the like.
  • These light sources preferably include light having a wavelength of 200 to 500 nm, and more preferably light having a wavelength of 254 to 420 nm.
  • the output of these light sources is preferably from 10 to 5,000 W, and more preferably from 100 to 1,000 W.
  • the light irradiation is carried out preferably at a temperature of room temperature to 300° C., preferably for about 0.1 to 30 minutes.
  • the light irradiation is preferably carried out under a non-oxidizing atmosphere.
  • the polystyrene-equivalent polymerization average molecular weight measured by gel permeation chromatography is preferably from 500 to 500,000, and more preferably from 2,000 to 100,000.
  • silane compounds to be used in the present invention are preferably cyclic silane compounds represented by the formula (1B), more preferably compounds of the formula (1B) in which n is 5 or 6, still more preferably, at least one compound selected from the group consisting of cyclopentasilane, silylcyclopentasilane and cyclohexasilane, and particularly preferably cyclopentasilane.
  • Examples of the zero-valent cobalt complex contained in a composition to be applied on a surface made of silicon include complexes represented by each of the following formulas (2-1) to (2-4): L 1 a Co(CO) b (2-1) wherein L 1 in the formula (2-1) is a ligand selected from the group consisting of 1,3-cyclooctadiene, 1,4-cyclooctadiene, 1,5-cyclooctadiene, 1,3-butadiene, norbornadiene and allyl, a is 1 or 2, b is 0, 1, 2 or 4, and a+b is 2, 3, 4 or 5, and provided that when a is 2, two L 1 (s) may be the same or different from each other; L 2 c Co 2 (CO) d R e (2-2) wherein L 2 in the formula (2-2) is a ligand selected from the group consisting of 1,3-cyclohexadiene, 1,4-cyclohexadiene, allyl, norbornadiene
  • the zero-valent cobalt complex examples include complexes represented by the formula (2-1), such as 1,5-cyclooctadienedicarbonylcobalt, bis(1,5-cyclooctadiene)cobalt, bis(1,5-cyclooctadiene)carbonylcobalt, 1,3-cyclooctadienedicarbonylcobalt, bis(1,3-cyclooctadiene)cobalt, bis(1,3-cyclooctadiene)carbonylcobalt, ⁇ 3 -allyltricarbonylcobalt, and bis( ⁇ 3 -allyl)carbonylcobalt; and compounds represented by the formula (2-2), such as, for example, octacarbonyldicobalt, (norbornadiene)hexacarbonyldicobalt, cyclooctenehexacarbonyldicobalt and bis(norbornadiene)tetracarbonyldico
  • an zero-valent cobalt complex to be used in the present invention is preferably at least one complex selected from the group consisting of bis(1,3-cyclooctadiene)cobalt, bis(1,5-cyclooctadiene)cobalt, (1,3-cyclooctadiene)dicarbonylcobalt, (1,5-cyclooctadiene)dicarbonylcobalt, ⁇ 3 -allyltricarbonylcobalt and octacarbonyldicobalt, and particularly preferably octacarbonyldicobalt.
  • a ratio (n Si /n Co ) of the number of silicon atoms (n Si ) contained in a silane compound to the number of cobalt atoms (n Co ) contained in a zero-valent cobalt complex is preferably from 0.5 to 4, more preferably from 0.6 to 2.5, and particularly preferably from 0.8 to 1.25.
  • compositions to be applied on a surface made of silicon are preferably prepared as a composition in a solution state obtained by mixing the silane compound with the zero-valent cobalt complex in a suitable organic solvent.
  • Examples of the usable organic solvents include hydrocarbon compounds, ethers and the like.
  • Examples of hydrocarbon compounds include aliphatic hydrocarbon compounds, alicyclic hydrocarbon compounds, aromatic hydrocarbon compounds and the like. Specific examples of these compounds include aliphatic hydrocarbon compounds such as n-pentane, cyclopentane, n-hexane, cyclohexane, n-heptane, n-octane, decane and squalane; alicyclic hydrocarbon compounds such as cycloheptane, cyclooctane, cyclodecane, hydrogenated products of dicyclopentadiene and decahydronaphthalene; and aromatic hydrocarbon compounds such as benzene, toluene, xylene, durene, indene and tetrahydronaphthalene.
  • ethers include diethyl ether, dipropyl ether, dibutyl ether, ethyleneglycoldimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, tetrahydrofuran, tetrahydropyran, p-dioxane and the like.
  • hydrocarbon compounds are preferably used, and aromatic hydrocarbon compounds are more preferably used.
  • the concentration of the solid component of the composition to be applied on a surface made of silicon is preferably from 1 to 50% by weight, and more preferably from 10 to 30% by weight.
  • the composition thus prepared may be used to form a crystalline cobalt silicide film as it is, or after irradiation of the composition with light.
  • the irradiation of the composition with light further improves applicability of the composition.
  • the above-mentioned composition is applied on a surface made of silicon to form a coated film.
  • the present inventors have found that formation of a crystalline cobalt silicide by the composition depends on chemical composition of a silicon surface to which the composition is applied.
  • a coated film formed by applying the composition on a clean silicon surface is heated as mentioned below, a two-layer film containing a layer composed of a crystalline cobalt silicide film having firm adhesion is formed.
  • a coated film formed by applying the composition on a surface having a thin film of silicon oxide formed thereon is heated as mentioned below, a two-layer film is not formed.
  • the present inventors estimate that the phenomenon is caused by a mechanism in which a crystalline cobalt silicide is formed from the composition.
  • cobalt atoms in a coated film formed on a clean silicon surface diffuse in the depth direction of the silicon surface to form a cobalt silicide, together with silicon atoms existing in the deep region (therefore, a crystalline cobalt silicide film is formed by so-called “eroding” of the silicon surface, and is formed up to the position deeper than the initial silicon surface).
  • the single layer film contains silicon atoms, oxygen atoms, carbon atoms and cobalt atoms.
  • the silicon surface is preferably cleaned by removing a natural oxide film from the silicon surface in advance.
  • the removal of the natural oxide film can be carried out, for example, by bringing the silicon surface into contact with an aqueous solution of hydrofluoric acid.
  • a surface having a pattern made of silicon and a crystalline cobalt silicide can be formed easily by removing a surface corresponding to the thickness of a single layer film formed only on a portion above the initial silicon surface.
  • a single layer film formed on a thin film of silicon oxide may contain microcrystalline particles of a cobalt silicide depending on a Co:Si ratio in the composition for application to be used. However, an influence is not exerted on formability of the pattern.
  • a thin film of silicon oxide only on a partial region of a clean silicon surface, for example, by a method in which a composition containing a silicon oxide precursor is prepared and the composition is pattern-applied on a clean surface, and then the pattern-applied composition is heated or irradiated with light in air; a method in which the composition is applied on the whole surface of a clean surface and then the composition is pattern-wise irradiated with light in air.
  • the silicon oxide precursor include a compound represented by the above formula (1A) or (1B), and a solution prepared by dissolving such a compound in a suitable organic solvent can be used as a composition containing the silicon oxide precursor.
  • an ink-jet method can be used for pattern-application of such a composition.
  • the composition is pattern-wise stamped using a stamp having a convex surface corresponding to a desired pattern and the like.
  • the heating may be carried out, for example, at 300 to 500° C., for example, for about 0.5 to 30 minutes.
  • light having a wavelength of 170 to 600 nm can be used.
  • a composition obtained by mixing a silane compound with a zero-valent cobalt complex is preferably applied on the thus obtained cleaned silicon surface or silicon surface having a thin film of silicon oxide only on a partial region.
  • composition for example, by a spin coating method, a dip coating method, a curtain coating method, a roll coating method, a spray coating method, an ink-jet method, a printing method and the like.
  • the application may be carried out once or applied plural times.
  • a coated film is formed on a surface made of silicon by removing a solvent from the coated film after application.
  • the solvent can be removed by an appropriate method.
  • a spin coating method is employed as an application method, since most of the solvent contained in a composition is vaporized during the application step, the coated film obtained after application of the composition can be subjected to the subsequent heating step as the coated film as it is, without subjecting to a special step of removing the solvent after application of the composition.
  • the step of further removing the solvent may be carried out.
  • the step of removing the solvent is preferably carried out.
  • the removal of a solvent after application can be carried out by retaining a coated film after application, preferably at a temperature of 50 to 180° C., preferably for 5 to 60 minutes.
  • Both the application step and solvent removal step are preferably carried out under a non-oxidizing atmosphere.
  • the thickness of the coated film to be formed is preferably from 5 to 1,000 nm, and more preferably 10 to 200 nm, from the viewpoint of a film quality of a crystalline cobalt silicide film formed.
  • the coated film thus formed is subjected to the step of heating at 550 to 900° C.
  • the heating temperature is preferably from 600 to 850° C.
  • the heating step may be a one-stage heating step in which only the step of heating at 550 to 900° C. is carried out, or a two- or multi-stage heating step in which the step of heating a coated film at a temperature of lower than 550° C. is carried out before further heating at 550 to 900° C.
  • the heating is preferably carried out in one stage or in two stages.
  • the heating time at 550 to 900° C. is preferably from 1 to 120 minutes, and more preferably from 10 to 60 minutes.
  • the pressure in case of heating is preferably from 1 ⁇ 10 6 to 1 ⁇ 10 ⁇ 5 Pa, and more preferably from 1 ⁇ 10 5 to 1 ⁇ 10 ⁇ 2 Pa.
  • the heating temperature in the first stage heating step is preferably from 200 to 500° C., and more preferably from 300 to 400° C.
  • the heating time in the first stage is preferably from 1 to 120 minutes, and more preferably from 5 to 30 minutes.
  • the pressure during the first stage heating is preferably from 1 ⁇ 10 5 to 1 ⁇ 10 ⁇ 2 Pa.
  • the coated film after the first stage heating is then heated at 550 to 900° C., and preferably at 600 to 850° C.
  • the heating time in the second stage is preferably from 1 to 120 minutes, and more preferably from 5 to 60 minutes.
  • the pressure during the second stage heating is preferably from 1 ⁇ 10 6 to 1 ⁇ 10 ⁇ 5 Pa, and more preferably from 1 ⁇ 10 5 to 1 ⁇ 10 ⁇ 2 Pa.
  • All of the heating steps are preferably carried out under a non-oxidizing atmosphere.
  • the non-oxidizing atmosphere can be achieved by carrying out the above operations, for example, in an inert gas or in a mixed gas of an inert gas with a reducing gas.
  • the inert gas include nitrogen, helium, argon and the like
  • the reducing gas include hydrogen, carbon monoxide and the like.
  • an inert gas is preferred, and nitrogen or argon is particularly preferred.
  • Nitrogen or argon to be used is preferably controlled so as to adjust the concentration of oxygen to 10 ppm by volume or less.
  • a two-layer film composed of a first layer made of a crystalline cobalt silicide on a surface made of silicon, and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer is formed.
  • the cobalt silicide layer of the first layer has the composition of CoSi 2 stoichiometrically and also has high crystallinity.
  • the first layer is a cobalt silicide layer formed by grain growth along its crystal direction.
  • silicon having high crystallinity is used as silicon constituting the lower layer, a highly crystallized cobalt silicide film can be obtained.
  • a surface of single crystal silicon is used as the above surface made of silicon, a film of a single crystal cobalt silicide grown epitaxially along the crystal direction of the single crystal silicon can be obtained.
  • the thickness of the first layer can be from 1 to 500 nm, and particularly from 5 to 200 nm.
  • the second layer is a layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms. More specifically, detailed analysis by the present inventors revealed that the second layer is a specific layer containing a particulate cobalt silicide in a matrix composed of silicon oxide containing carbon. The particulate cobalt silicide also has crystallinity.
  • the thickness of the second layer can be from 1 to 500 nm, and particularly from 5 to 200 nm.
  • the two-layer film per se By removing the second layer from the two-layer film as mentioned above, a single layer film made of a crystalline cobalt silicide formed on a surface made of silicon can be obtained.
  • the two-layer film per se also has unique properties, and can be applied industrially advantageously. That is, since the two-layer film exhibits extremely low electrical resistance and the two-layer film per se exhibits high conductivity, it is possible to apply it in the field of various electrode materials to be used for semiconductor devices.
  • a patterned film can be obtained in which a region of a single layer film and a region of a two-layer film form a pattern.
  • a patterned film also has high industrial usefulness.
  • This cobalt silicide film has the composition of CoSi 2 stoichiometrically and a high crystallinity, and therefore can be suitably applied in electrode materials of semiconductor devices, various electrical contact materials (for example, a source-drain contact of metal-oxide-semiconductor field-effect transistor (MOS-FET) and the like) and the like.
  • MOS-FET metal-oxide-semiconductor field-effect transistor
  • a composition for application was prepared by dissolving 0.186 g of cyclopentasilane synthesized according to the method disclosed in JP 2001-262058 A and 1.058 g of octacarbonyldicobalt (manufactured by Kanto Chemical Co., Inc. under the trade name of “cobaltoctacarbonyl”) in 3.325 g of toluene.
  • Si (100) substrate was immersed in a 1% by weight aqueous solution of hydrofluoric acid for 1 minute, washed with ultrapure water and then dried to clean the surface.
  • the composition for application prepared in the above Preparation Example 1 was applied on the above cleaned silicon substrate using a spin coater under conditions of a rotation speed of 2,000 rpm and a rotation time of 30 seconds, and then heated at 400° C. for 60 minutes under 1 atm. Subsequently, the silicon substrate after application and 400° C. heating was removed from the glove box, and heated using a commercially available rapid thermal annealing (RTA) device at 800° C. for 60 minutes under a pressure of 1 Pa to form a two-layer film on the silicon substrate.
  • RTA rapid thermal annealing
  • TEM transmission electron microscope
  • EDX ultra-sensitive micro region element distribution analysis
  • Samples were prepared using the two-layer film formed as mentioned above and using the following procedures, and the TEM observation and EDX analysis were carried out using the following devices and conditions.
  • a carbon deposited film and an FIB (Focused Ion Beam)-assisted tungsten film were coated on a surface of the two-layer film formed as mentioned above for outermost surface protection, and a small sample piece was then removed by micro sampling.
  • thin section preparation was carried out by FIB processing, and reduction of FIB damage and additional thin section preparation were then carried out by Ar ion milling. The TEM observation and EDX analysis were carried out using this thin section as a sample.
  • Ion milling device manufactured by GATAN, Inc., Model “PIPS Model-691”
  • Beam diameter ⁇ about 1 nm
  • FIG. 1( a ) and FIG. 1( b ) A TEM image at a magnification of 50,000 times and a TEM image at a magnification of 500,000 times obtained as mentioned above are shown in FIG. 1( a ) and FIG. 1( b ) , respectively.
  • FIG. 2( a ) and FIG. 2( b ) an EDX spectrum of the first layer and an EDX spectrum of the second layer obtained as mentioned above are shown in FIG. 2( a ) and FIG. 2( b ) , respectively.
  • the composition of the first layer is almost stoichiometrically CoSi 2
  • Beam diameter ⁇ several tens nm
  • FIG. 3( a ) and FIG. 3( b ) An electron diffraction image of the first layer and an electron diffraction image of a blackish portion in a TEM image of the second layer obtained as mentioned above are shown in FIG. 3( a ) and FIG. 3( b ) , respectively. Also, plane distances and plane angles calculated from the electron diffraction images of these portions are shown in Table 1, together with theoretical values.
  • FIGS. 3( a ) and 3( b ) shows a pattern following the theory of a single crystal of CoSi 2 , and both the plane distances and plane angles in Table 1 show a good agreement with the theoretical values of a single crystal of CoSi 2 .
  • both the first layer and the blackish portion in the second layer are composed of a single crystal of CoSi 2 . From these results, it is estimated that the second layer contains a cobalt silicide in a matrix composed of silicon oxide containing carbon.
  • Resistivity correction factor RCF 4.532
  • a two-layer film was formed on a silicon substrate in the same manner as in Example 1, except that the heating temperature under a pressure of 1 Pa in Example 1 was changed to 700° C.
  • a two-layer film was formed on a silicon substrate in the same manner as in Example 1, except that the heating temperature under a pressure of 1 Pa in Example 1 was changed to 900° C.
  • Si (100) substrate was immersed in a 1% by weight aqueous solution of hydrofluoric acid for 1 minute, washed with ultrapure water and then dried to clean the surface. In the same manner, 6 hydrofluoric acid-treated Si (100) substrates were obtained.
  • the composition for application prepared in Preparation Example 1 was applied on each of the substrates in a glove box in the same manner as in Example 1, and then heated at 400° C. for 60 minutes. Subsequently, each substrate after the above application and 400° C. heating was removed from the glove box. Five of these substrates were heated using a commercially available RTA device at heating temperatures of 500° C., 600° C., 700° C., 800° C. and 900° C., respectively, for 60 minutes under a pressure of 1 Pa to form two-layer films different in heating temperature on 5 substrates, respectively. The remaining one substrate was subjected to the following X-ray diffraction analysis as it is, without carrying out the heating under a pressure of 1 Pa.
  • the first layer hardly shows crystallinity when heated at 500° C. under a pressure of 1 Pa but shows crystallinity when the heating temperature exceeds 500° C. Also, it was found that the first layer is obtained by epitaxial crystal growth following the crystal direction of an underlying silicon substrate.
  • a two-layer film was formed on a silicon substrate in the same manner as in Example 1.
  • the second layer of the two-layer film on a silicon substrate was removed by chemical mechanical polishing (CMP) under the following conditions to obtain a cobalt silicide single layer film on a silicon substrate.
  • CMP chemical mechanical polishing
  • Polishing device Model “MA-200D” manufactured by Musashino Electron Corp.
  • Polishing pad Trade name “SURFIN XXX-5” manufactured by Fujimi Inc.
  • Aqueous dispersion for chemical mechanical polishing Trade name “Slurry for oxide polishing S31-D08” manufactured by JSR Corp.
  • the cobalt silicide single layer film on a silicon substrate obtained as mentioned above was evaluated as follows.
  • FIG. 5( a ) and FIG. 5( b ) A cross-sectional SEM image before CMP and a cross-sectional SEM image after CMP are shown in FIG. 5( a ) and FIG. 5( b ) , respectively. From these cross-sectional SEM images, it was confirmed that only the second layer (upper layer) of the two-layer film could be removed by the above CMP.
  • a film was formed on a silicon substrate in the same manner as in Example 1, except that an Si (111) substrate was used as a substrate, and cleaning of an upper surface of the substrate by an aqueous solution of hydrofluoric acid was not carried out.
  • the substrate used here was a silicon substrate having a natural oxide film on its whole surface.
  • FIG. 6 A cross-section TEM image (at a magnification of 500,000 times) of the film formed as mentioned above, which was taken in the same manner as in Example 1, is shown in FIG. 6 . Referring to the photograph, it was found that a single layer film is formed on only a portion above the natural oxide film (shown by “SiO 2 ” in FIG. 6 ) in this Reference Example.
  • FIG. 7 A resist pattern as shown in FIG. 7 was formed by photolithography on an Si (100) substrate having a natural oxide film on the whole surface.
  • portions colored in gray are regions having a resist film.
  • FIG. 7( a ) is a view showing the whole region of the resist pattern
  • FIG. 7( b ) is a partially enlarged view of the region surrounded by dashed line in FIG. 7( a ) .
  • line width H is 30 ⁇ m
  • gap width G is 3 ⁇ m
  • lengths W, L and D are 459 ⁇ m, 490 ⁇ m and 10 ⁇ m, respectively.
  • the substrate having this resist pattern was immersed in a 1% by weight aqueous solution of hydrofluoric acid for 1 minute, washed with ultrapure water, and then dried. Subsequently, the resist is broken off using a remover, and the substrate was washed with ultrapure water and dried to form a pattern composed of a region having a natural oxide film and a region not having the natural oxide film on the Si substrate.
  • the composition for application prepared in Preparation Example 1 was applied on the above substrate using a spin coater under conditions of a rotation speed of 2,000 rpm and a rotation time of 30 seconds, and then heated at 400° C. for 60 minutes under 1 atm. Subsequently, the silicon substrate after the above application and 400° C. heating was removed from the glove box, and heated using a commercially available RTA device at 800° C. for 60 minutes under reduced pressure of 1 Pa to form a film on the silicon substrate.
  • FIG. 8 An optical micrograph of the film formed here is shown in FIG. 8 .
  • the micrograph region in FIG. 8 corresponds to a region surrounded by dashed-dotted line in FIG. 7( b ) .
  • a film on the region not having a natural oxide film and a film on the region having the natural oxide film on the Si substrate form a pattern.
  • the film formed in this Example is a patterned film composed of a two-layer film on the region not having a natural oxide film and a single layer film on the region having the natural oxide film on the Si substrate.
  • a crystalline cobalt silicide film which is the first layer in the two-layer film is formed up to a position deeper than the initial silicon surface, and therefore, a surface having a fine pattern composed of silicon and a crystalline cobalt silicide can be formed by removing a surface corresponding to the thickness of a film formed only on a portion above the initial silicon surface, in the patterned film formed in this Example.
  • a crystalline cobalt silicide film can be formed easily, rapidly and inexpensively, on a surface made of silicon in a simple manner.
  • the crystalline cobalt silicide film formed by the method of the present invention is excellent in crystallinity and conductivity, and is therefore best suited for use as an electrode material for semiconductor devices and also can be suitably used as various electrical contact materials.
  • a two-layer film produced during the process of forming a crystalline cobalt silicide film by the method of the present invention is excellent in conductivity in itself, and therefore, can be suitably used in various electrode materials to be used for semiconductor devices and the like.

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220043206A1 (en) * 2013-06-26 2022-02-10 Micron Technology, Inc. Photonic device having a photonic crystal lower cladding layer provided on a semiconductor substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
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CN106571287A (zh) * 2015-10-12 2017-04-19 上海新昇半导体科技有限公司 外延层的形成方法

Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4324854A (en) * 1980-03-03 1982-04-13 California Institute Of Technology Deposition of metal films and clusters by reactions of compounds with low energy electrons on surfaces
JPS59169127A (ja) 1983-03-17 1984-09-25 Toshiba Corp 半導体装置の製造方法
US4814294A (en) * 1987-07-30 1989-03-21 Allied-Signal Inc. Method of growing cobalt silicide films by chemical vapor deposition
JPH08116054A (ja) 1994-10-14 1996-05-07 Nec Corp コバルトシリサイド膜より成る半導体装置及び該装置の製造方法
US5700400A (en) * 1993-06-15 1997-12-23 Nippon Oil Co., Ltd. Method for producing a semiconducting material
US6251777B1 (en) * 1999-03-05 2001-06-26 Taiwan Semiconductor Manufacturing Company Thermal annealing method for forming metal silicide layer
JP2001262058A (ja) 2000-03-13 2001-09-26 Jsr Corp シリコン膜形成用組成物およびシリコン膜の形成方法
US20020008486A1 (en) * 2000-07-24 2002-01-24 Yazaki Corporation Wiper control Apparatus
US20020038889A1 (en) * 2000-06-19 2002-04-04 Shunpei Yamazaki Semiconductor device
JP2003313299A (ja) 2002-04-22 2003-11-06 Seiko Epson Corp 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法
US6753245B2 (en) * 2000-06-29 2004-06-22 Board Of Trustees, The University Of Illinois Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
US6797602B1 (en) * 2001-02-09 2004-09-28 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contacts
US6846513B2 (en) * 2000-12-28 2005-01-25 Seiko Epson Corporation Method for fabricating a silicon thin-film
JP2005142540A (ja) 2003-10-16 2005-06-02 Jsr Corp シリコン・コバルト膜形成用組成物、シリコン・コバルト膜およびその形成方法
US20060246217A1 (en) 2005-03-18 2006-11-02 Weidman Timothy W Electroless deposition process on a silicide contact
US20070077742A1 (en) * 2003-10-16 2007-04-05 Jsr Corporation Composition for forming silicon-cobalt film, silicon-cobalt film and method forming same
US20070087949A1 (en) * 2005-10-14 2007-04-19 Aiping Wu Aqueous cleaning composition for removing residues and method using same
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
JP2008060201A (ja) 2006-08-30 2008-03-13 Seiko Epson Corp 半導体装置の製造方法、薄膜トランジスタとその製造方法、電気光学装置とその製造方法、及び電子機器
US20080254218A1 (en) * 2007-04-16 2008-10-16 Air Products And Chemicals, Inc. Metal Precursor Solutions For Chemical Vapor Deposition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361532B1 (ko) 2000-06-23 2002-11-18 주식회사 하이닉스반도체 반도체소자의 게이트전극 제조방법
TW200746268A (en) * 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
WO2008111499A1 (ja) * 2007-03-12 2008-09-18 Showa Denko K.K. コバルト含有膜形成材料、および該材料を用いたコバルトシリサイド膜の製造方法
KR101172311B1 (ko) 2010-10-29 2012-08-14 에스케이하이닉스 주식회사 반도체 장치 제조방법

Patent Citations (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4324854A (en) * 1980-03-03 1982-04-13 California Institute Of Technology Deposition of metal films and clusters by reactions of compounds with low energy electrons on surfaces
JPS59169127A (ja) 1983-03-17 1984-09-25 Toshiba Corp 半導体装置の製造方法
US4814294A (en) * 1987-07-30 1989-03-21 Allied-Signal Inc. Method of growing cobalt silicide films by chemical vapor deposition
US5700400A (en) * 1993-06-15 1997-12-23 Nippon Oil Co., Ltd. Method for producing a semiconducting material
JPH08116054A (ja) 1994-10-14 1996-05-07 Nec Corp コバルトシリサイド膜より成る半導体装置及び該装置の製造方法
US6251777B1 (en) * 1999-03-05 2001-06-26 Taiwan Semiconductor Manufacturing Company Thermal annealing method for forming metal silicide layer
JP2001262058A (ja) 2000-03-13 2001-09-26 Jsr Corp シリコン膜形成用組成物およびシリコン膜の形成方法
US20020038889A1 (en) * 2000-06-19 2002-04-04 Shunpei Yamazaki Semiconductor device
US6753245B2 (en) * 2000-06-29 2004-06-22 Board Of Trustees, The University Of Illinois Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
US20020008486A1 (en) * 2000-07-24 2002-01-24 Yazaki Corporation Wiper control Apparatus
US6846513B2 (en) * 2000-12-28 2005-01-25 Seiko Epson Corporation Method for fabricating a silicon thin-film
US6797602B1 (en) * 2001-02-09 2004-09-28 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor device with supersaturated source/drain extensions and metal silicide contacts
JP2003313299A (ja) 2002-04-22 2003-11-06 Seiko Epson Corp 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法
JP2005142540A (ja) 2003-10-16 2005-06-02 Jsr Corp シリコン・コバルト膜形成用組成物、シリコン・コバルト膜およびその形成方法
US20070077742A1 (en) * 2003-10-16 2007-04-05 Jsr Corporation Composition for forming silicon-cobalt film, silicon-cobalt film and method forming same
US20100107927A1 (en) 2005-03-18 2010-05-06 Stewart Michael P Electroless deposition process on a silicon contact
US20060246217A1 (en) 2005-03-18 2006-11-02 Weidman Timothy W Electroless deposition process on a silicide contact
US20060264043A1 (en) 2005-03-18 2006-11-23 Stewart Michael P Electroless deposition process on a silicon contact
US20070087949A1 (en) * 2005-10-14 2007-04-19 Aiping Wu Aqueous cleaning composition for removing residues and method using same
US20070108404A1 (en) 2005-10-28 2007-05-17 Stewart Michael P Method of selectively depositing a thin film material at a semiconductor interface
WO2007111679A2 (en) 2005-10-28 2007-10-04 Applied Materials, Inc. Method of selectively depositing a thin film material at a semiconductor interface
JP2009514238A (ja) 2005-10-28 2009-04-02 アプライド マテリアルズ インコーポレイテッド 半導体接合部に薄膜物質を選択的に堆積させる方法
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
JP2008060201A (ja) 2006-08-30 2008-03-13 Seiko Epson Corp 半導体装置の製造方法、薄膜トランジスタとその製造方法、電気光学装置とその製造方法、及び電子機器
US20080254218A1 (en) * 2007-04-16 2008-10-16 Air Products And Chemicals, Inc. Metal Precursor Solutions For Chemical Vapor Deposition

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Alice E. White, et al., "Mesotaxy: Single-crystal growth of buried CoSi2 layers", Appl. Phys. Lett., 50(2), Jan. 12, 1987, pp. 94-97.
Dormans et al. ("OMCVD of cobalt and cobalt silicide"), Journal of Crystal Growth, vol. 114, Issue 3, Nov. 1991, pp. 364-372, abstract only. *
International Preliminary Report on Patentability Issued Aug. 14, 2012 in PCT/JP10/73847 Filed Dec. 22, 2010.
International Search Report Issued Mar. 8, 2011 in PCT/JP10/073847 Filed Dec. 22, 2010.
Lee et al. "Deposition Characteristics of Co Thin Films Over High Aspect Ratio Trenches by MOCVD Using Co2(Co)8 as a Precursor", Journal of the Korean Physical Society, vol. 49, Dec. 2006, pp. S697-S701. *
Shyuichi Saitoh, et al., "Double heteroepitaxy in the Si (111)/CoSi2/Si structure", Appl. Phys. Lett., 37(2), Jul. 15, 1980, pp. 202-205.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220043206A1 (en) * 2013-06-26 2022-02-10 Micron Technology, Inc. Photonic device having a photonic crystal lower cladding layer provided on a semiconductor substrate
US11550101B2 (en) * 2013-06-26 2023-01-10 Micron Technology, Inc. Photonic device having a photonic crystal lower cladding layer provided on a semiconductor substrate

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