US8410589B2 - Lead frame, resin package, semiconductor device and resin package manufacturing method - Google Patents

Lead frame, resin package, semiconductor device and resin package manufacturing method Download PDF

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US8410589B2
US8410589B2 US12/545,176 US54517609A US8410589B2 US 8410589 B2 US8410589 B2 US 8410589B2 US 54517609 A US54517609 A US 54517609A US 8410589 B2 US8410589 B2 US 8410589B2
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resin
lead frame
outer frame
pressure loss
die pad
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US20100044844A1 (en
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Yasuo Matsumi
Mitsuo Maeda
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49565—Side rails of the lead frame, e.g. with perforations, sprocket holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a lead frame, a resin package, a semiconductor device, and a resin package manufacturing method.
  • a lead frame comprises a central die pad that is fixed to the main body of the lead frame by means of four suspended leads extending from the main body along the diagonal lines of the die pad.
  • a plurality of die bonding leads are arranged around the die pad.
  • the suspended leads may also be constructed so as to connect the die pad body to the outer frame.
  • Such a lead frame is described for example in Japanese Patent Application Laid-open No. H5-315512.
  • the lead frame described in Japanese Patent Application Laid-open No. H5-315512 is provided with an open region through which resin material can escape when resin material is injected into the mold during resin molding.
  • the inventors in this case investigated lead frames to resolve these problems, and discovered that with conventional lead frames, the injected resin material divides into a plurality of resin streams as it flows from the injection site, and that welds tend to occur at the confluences, detracting from the quality of the manufactured resin package.
  • the lead frame of the present invention is a lead frame applied during resin molding of a resin package having a polygonal plane shape, comprising: an outer frame, a plurality of bonding leads extending from the outer frame towards the inside thereof, a die pad disposed inside the outer frame and separated from the bonding leads, a plurality of connecting leads linking the outer frame with the die pad, an excess resin reservoir provided in the outer frame and holding excess resin during resin molding, and a pressure loss section for communicating between the excess resin reservoir and the space between the outer frame and die pad, wherein the pressure loss section extends from a position corresponding to one corner of the polygonal resin package, when the minimum value of the opening area of the pressure loss section perpendicular to a direction of resin flow in the pressure loss section during resin molding is defined as S 1 , and the average value of the opening area of the excess resin reservoir perpendicular to the direction of resin flow in the excess resin reservoir during resin molding is defined as S 2 , S 1 ⁇ S 2 is satisfied.
  • the polygonal shape includes, for example,
  • the resin When the lead frame is sandwiched between molds during resin injection and a resin material is injected from one corner into the space between the molds, the resin converges at a corner located on a line extending diagonally from this corner, but the excess resin reservoir communicates with this corner via the pressure loss section. That is, because the resin material that tends to accumulate in the corner is transported to the excess resin reservoir by means of the pressure loss section, not only is weld formation suppressed at the corner, but since the minimum value S 1 of the opening area of the pressure loss section perpendicular to the direction of flow of the resin is small, the pressure loss section is able to maintain the resin pressure at a suitable level in the corner so that the resin material fills every part of the mold in that area.
  • the pressure loss section can be formed by half-etching or the like at the desired location.
  • the opening area of the pressure loss section perpendicular to the direction of resin flow is smaller than the opening area perpendicular to the direction of resin flow would be in the case of a through hole formed with the same planar shape. This is why the pressure loss section can have the aforementioned effect of adequately controlling the resin flow.
  • those of the connecting leads that are close to the corners are preferably bent. Because the lead frame of the present invention is provided with a pressure loss section, the connecting leads are disposed so as to avoid the connection point of the pressure loss section, but the resin pressure exerted on the connecting leads during resin injection is reduced if the leads are bent, thereby preventing deformation of the connecting leads.
  • the bent connecting leads are each preferably formed from a first lead parallel to the bonding lead near this connection lead and a second lead following a diagonal line passing through the corners of the polygonal resin package.
  • the flow of resin changes direction when it impacts the first lead during resin injection, and flows into the corner while extending from the first lead to the second lead.
  • welds are likely to occur due to collisions between two resin flows coming from different directions, but when the resin flow extends from the first lead to the second lead, weld formation is suppressed because the resin converges with the other resin flow at a position somewhat apart from the corner.
  • the surface of the lead frame is preferably black-oxide treated.
  • Black-oxide treating the lead frame greatly strengthens the adhesive force between the resin material and the lead frame, making the lead frame less likely to detach from the manufactured resin package.
  • a resin package manufacturing method using the lead frame described above comprises a step of preparing the aforementioned lead frame, a step of disposing the lead frame within a space sandwiched between two opposing molds, and a step of injecting a resin material into the space.
  • the resin material is preferably a liquid crystal polymer in the resin package manufacturing method of the present invention.
  • the advantage of using a liquid crystal polymer is that it allows a highly rigid resin package to be manufactured.
  • the temperature T 1 (° C.) of the mold during injection of the resin material and the flow initiation temperature T 2 (° C.) of the resin material are preferably such that T 1 (° C.) ⁇ T 2 (° C.) ⁇ 70 (° C.). If the resin is injected under these temperature conditions, enough resin will flow into the mold to form a resin molded body with a regular appearance. This also increases the adhesive strength between the lead frame and the resin.
  • the lead frame is also embedded in the resin material in such a way that the surfaces of the die pad and parts of the bonding leads are exposed to air.
  • This resin package is of high quality because weld formation is suppressed.
  • the semiconductor device of the present invention is provided with the resin package described above and a semiconductor element fixed to the die pad. Because of the high quality of the resin package, this semiconductor device is resistant to deterioration of the semiconductor element due to deterioration of the resin package.
  • the lead frame of the present invention makes it possible to form a high-quality resin package, and a resin package manufactured using the lead frame of the present invention is of high quality.
  • FIG. 1 is a plane view of a lead frame
  • FIG. 2 is a plane view of unit pattern 1 (front) in the lead frame
  • FIG. 3 is a plane view of unit pattern 1 (reverse) in the lead frame
  • FIG. 4 is an expanded oblique view of region IV shown in FIG. 3 ;
  • FIG. 5 is an expanded oblique view of region V shown in FIG. 3 ;
  • FIG. 6 is a plane view of unit pattern 1 (reverse) for purposes of explaining the flow of resin material
  • FIG. 7 is a plane view of a resin package
  • FIG. 8 is an oblique view of a resin package
  • FIG. 9 is a cross-section along arrows IX-IX in the resin package shown in FIG. 7 ;
  • FIG. 10 is a plane view of a unit pattern (reverse) of a comparative example
  • FIG. 11 is a plane view of a specific lead frame site showing a variant of excess resin reservoir H 4 ;
  • FIG. 12 is a model cross-section showing the configuration of an air-tightness testing unit used in air-tightness testing.
  • FIG. 1 is a plane view showing lead frame 100 of an embodiment.
  • the X axis, Y axis and Z axis in this figure form a three-dimensional Cartesian coordinate system.
  • Lead frame 100 comprises lead frame body 10 consisting of a flexible metal plate on which a plurality of unit patterns 1 are arranged in a matrix. In this figure, there are 15 unit patterns 1 in the X-axis direction and 4 in the Y-axis direction, for a total of 60 unit patterns 1 on one lead frame 100 . One resin package is formed within each unit pattern 1 . That is, lead frame 100 is applied during resin molding of a resin package.
  • Both ends of lead frame body 10 in the Y-axis direction are provided with a plurality of holes 2 into which pins are inserted in order to position lead frame 100 and transport lead frame 100 in the X-axis direction.
  • the Z axis is the direction of thickness of lead frame 100 .
  • FIG. 2 is a plane view of a unit pattern 1 (front) in the lead frame.
  • Outer frame F of the lead frame body is located on the outside of unit pattern 1 .
  • Unit pattern 1 is provided with outer frame F, a plurality of bonding leads L 2 extending from outer frame F towards the inside, die pad (island) D arranged inside outer frame F without touching bonding leads L 2 , a plurality of connection leads L 1 (L 31 , L 32 ) linking outer frame F and die pad D, excess resin reservoirs H 3 , H 4 and H 5 in outer frame F for holding excess resin during resin molding, and pressure loss sections H 1 and H 2 , which communicate between excess resin reservoir H 3 and the space between outer frame F and die pad D.
  • Connection leads are also called suspended leads.
  • outer frame F The inner edge of outer frame F is square or rectangular, die pad D is also square or rectangular, and bonding leads L 2 extend in four directions perpendicular to the four sides of these squares or rectangles. Bonding leads L 2 and the semiconductor element fixed in the center of die pad D are connected by bonding wires (not shown).
  • a resin package is manufactured having a plane shape with 4 sides roughly parallel to the 4 sides of square or rectangular die pad D.
  • the resin package can also be made in the shape of a polygon other than a quadrangle.
  • Pressure loss sections H 1 and H 2 extend from a position corresponding to one corner of a resin package with a polygonal plane shape.
  • resin material flows into pressure loss sections H 1 and H 2 in the direction of the X axis.
  • S 1 is the minimum value of the opening areas of pressure loss sections H 1 and H 2 perpendicular to the direction of resin flow (X-axis direction) in the pressure loss sections during resin molding.
  • S 2 is the average value of the opening areas of excess resin reservoirs H 3 , H 4 and H 5 perpendicular to the direction of resin flow (Y-axis direction) in excess resin reservoirs H 3 , H 4 and H 5 during resin molding.
  • S 1 is less than S 2 .
  • Groove H 6 which is used to suction out internal gas during resin molding, is connected on the reverse side to the end of excess resin reservoir H 5 .
  • Groove 6 extends in the X-axis direction, and a gas suction conduit is provided in the mold above this groove, with the suction outlet of this conduit in groove 6 .
  • Pressure loss section H 2 and excess resin reservoirs H 3 and H 5 are through holes penetrating from the front to the reverse of outer frame F of the lead frame in the direction of thickness (Z-axis direction).
  • FIG. 3 is a plane view of a unit pattern 1 (reverse) in the lead frame.
  • Pressure loss section H 1 , excess resin reservoir H 4 and gas suction groove H 6 consist of grooves formed on the reverse side of the lead frame by half-etching of the reverse surface. The half-etched region is shown by shading. The ends of bonding leads L 2 , the edges of die pad D and connection leads L 1 (L 31 , L 32 ) are also half-etched. When the lead frame is made of copper, a cupric chloride solution for example can be used as the solution for copper half-etching.
  • Pressure loss section H 1 is positioned at a corner of the resin package, and is connected (communicates) with roughly quadrangular space J between outer frame F and one corner of die pad D.
  • Pressure loss section V 1 consisting of a groove formed by half-etching of the same reverse surface is connected to this space J. Pressure loss sections H 1 and H 2 extend in the X-axis direction, but pressure loss section V 1 extends in the Y-axis direction and connects to rectangular opening VL 1 .
  • Opening VL 1 is a through hole penetrating between the front and reverse of the lead frame, and its longer direction is the Y-axis direction.
  • Opening HL 1 is a through hole penetrating between the front and reverse of the lead frame, and its longer direction is the X-axis direction.
  • Excess resin reservoirs H 3 through H 5 are positioned between outer region C and inner region B of outer frame F, with a plurality of bonding leads L 2 extending from inner region B, and space J adjoining inner region B.
  • FIG. 4 is an expanded oblique view of region IV in FIG. 3 .
  • Pressure loss section H 1 is a groove that communicates with space J, and pressure loss section H 2 is a through hole connected to pressure loss section H 1 .
  • Pressure loss section H 1 has width w 1 and depth t 2 , and its opening area perpendicular to the X axis is (w 1 ⁇ t 2 ).
  • Pressure loss section H 2 has width w 1 and depth t 1 , and its opening area perpendicular to the X axis is (w 1 ⁇ t 1 ). Because t 1 >t 2 , the minimum value S 1 of the opening areas of pressure loss sections H 1 and H 2 perpendicular to the X axis is w 1 ⁇ t 2 .
  • Pressure loss section H 2 communicates with excess resin reservoir H 3 .
  • Excess resin reservoir H 3 has width w 2 and depth t 1 , and its opening area S 2 (H 3 ) perpendicular to the direction of resin flow (Y-axis direction) is w 2 ⁇ t 1 .
  • W 2 here is greater than w 1
  • t 1 is the thickness of the outer frame.
  • Pressure loss section V 1 with width w 1 and depth t 2 communicates with space J, and pressure loss section V 1 is also connected to opening VL 1 with width w 1 and depth t 1 .
  • the resin material flowing outwards from space J is constrained most strongly by pressure loss section H 1 , and less strongly by pressure loss section H 2 , before arriving at excess resin reservoir H 3 .
  • Part of the resin material flowing outwards from space J is strongly constrained by pressure loss section V 1 before arriving at opening VL 1 .
  • outer frame F has thickness t 1
  • pressure loss section H 1 has minimum depth t 2
  • t 2 is less than t 1 .
  • Pressure loss section H 1 can be formed by half-etching at that location, and the opening area of pressure loss section H 1 perpendicular to the direction of resin flow is smaller than it would be if a through hole with the same plane shape was formed in the outer frame. Consequently, pressure loss section H 1 can provide the effects described above by adequately constraining the flow of resin.
  • FIG. 5 is an expanded oblique view of region V in FIG. 3 .
  • Excess resin reservoir H 4 which functions as a pressure loss section, is connected to the latter stage of excess resin reservoir H 3 , and excess resin reservoir H 4 has width w 2 and depth t 2 . That is, the flow of resin would be hard to control if the space inside excess resin reservoir H 3 were connected without restrictions, but since the latter stage of excess resin reservoir H 3 is connected to excess resin reservoir H 4 , which has a small opening area perpendicular to the Y-axis direction, the unrestricted resin flow can be constrained, thereby preventing any extreme drop in the resin pressure within the resin package-forming space.
  • the opening area S 2 (H 4 ) of excess resin reservoir H 4 perpendicular to the direction of resin flow (Y-axis direction) is w 2 ⁇ t 2 .
  • Excess resin reservoir H 5 is connected as a through hole to excess resin reservoir H 4 , and excess resin reservoir H 5 has width w 2 and depth t 1 , providing a large opening area S 2 (H 5 ) of w 2 ⁇ t 1 perpendicular to the Y-axis direction which allows sufficient resin to accumulate.
  • Groove H 6 with width w 1 and depth t 2 is connected to excess resin reservoir H 5 , and the opening area in groove 6 perpendicular to the X-axial direction in which the resin flows is w 1 ⁇ t 2 .
  • the ratio of the lengths of excess resin reservoirs H 3 , H 4 and H 5 in the Y-axis direction is 3:2:1 for example, and the average value of the opening areas S 2 perpendicular to the Y axis ( ⁇ S 2 (H 3 ) ⁇ 3+S 2 (H 4 ) ⁇ 2+S 2 (H 5 ) ⁇ 1 ⁇ /6) is greater than the minimum value S 1 of the opening areas of the pressure loss sections.
  • the average value of opening areas S 2 can be calculated by first multiplying the area S 2 of each tiny section along the Y axis by the number of tiny sections, and then dividing by the number of tiny sections.
  • the upper and lower surfaces of the lead frame shown in FIGS. 4 and 5 are in contact with the flat surfaces of the upper and lower molds during resin injection, and the shape that defines each of the opening areas described above is a rectangle.
  • FIG. 6 is a plane view of unit pattern 1 (reverse) for explaining the flow of resin material.
  • the lead frame When resin is injected, the lead frame is sandwiched between a pair of molds having facing surfaces perpendicular to the Z axis, and resin material is injected into the space between molds from resin injection gate IJ provided in space K at one corner of the resin package.
  • Resin injection gate IJ is provided in one of the molds, and in this case it is provided on the reverse side of the resin package.
  • Resin material converges as shown by the arrows on space J in the corner diagonally across from space K, and excess resin reservoirs H 3 through H 5 are connected via pressure loss sections H 1 and H 2 to this corner space J.
  • connection leads L 1 extend along a diagonal line connecting two corners of the die pad, and these connection leads L 1 are connected to outer frame F.
  • the remaining connection leads L 31 and L 32 are located closer to corner spaces K and J than these connection leads L 1 , and are bent. Because this lead frame is provided with pressure loss sections H 1 and H 2 , connection leads L 31 and L 32 are arranged so as to avoid the connection site of pressure loss section H 1 .
  • the resin pressure exerted on connection leads L 31 and L 32 during resin injection is reduced by the bends in these connection leads, thereby inhibiting deformation of connection leads L 31 and L 32 .
  • the bent connection leads L 31 and L 32 consist of first leads L 31 parallel to the bonding leads L 2 adjacent to connection leads L 31 and L 32 , and second leads L 32 extending along a diagonal line passing through corners of the polygonal resin package.
  • the flow of resin changes direction when it impacts first lead L 31 during resin injection, and flows into corner space J while extending from first lead L 31 to second lead L 32 .
  • Welds are likely to occur due to collision between two resin flows flowing from different directions into corner space J having pressure loss section H 1 , but a resin flow that extends from first lead L 31 to second lead L 32 will converge with another resin flow at a position somewhat apart from the corner as shown by the arrow, thereby inhibiting the formation of welds.
  • the ends of the reverse faces of bonding leads L 2 and the reverse faces of first leads L 31 and second leads L 32 are formed by half-etching, and these half-etched regions allow the passage of resin material even when sandwiched between molds.
  • FIG. 7 is a plane view of a resin package.
  • the resin material is shown by dotted lines.
  • the plane shape of the resin package is roughly square, with an indented center that is defined by four side walls.
  • the space between outer surface WL 1 and inner surface WL 2 of these side walls is filled with resin, and during resin molding resin fills the roughly square region OL which is surrounded by four straight lines following the long directions of openings HL 1 and VL 1 .
  • This roughly square region OL defines the resin-filled space between molds.
  • the lead frame together with the resin is cut along the outer edge of this roughly square region OL or in other words along the outer surfaces of the side walls of the resin package during molding, thereby completing the resin package.
  • the outer sides of the package can be polished as necessary.
  • FIG. 8 is an oblique view of a resin package.
  • Die pad D is located inside indentation DP at the center of the resin package.
  • the surfaces of die pad D and parts of bonding leads L 2 of the lead frame are exposed to air, while the rest of the lead frame is embedded in the resin material.
  • Bonding leads L 2 are partly embedded in the bottom of side wall SW.
  • Semiconductor element SM is die-bonded onto die pad D, and this semiconductor element SM is electrically connected by bonding wires W to the exposed surfaces of bonding leads L 2 . Because the uncut lead frame is provided with pressure loss sections and the like, weld formation is suppressed and the resulting resin package is of high quality.
  • a lid (LID) consisting of a transparent flat plate is fixed to the tops of side walls SW, ensuring the air-tightness of the package.
  • a semiconductor device of an embodiment is provided with the resin package described above together with a semiconductor element SM fixed to die pad D. Because of the high quality of the resin package, this semiconductor device is resistant to deterioration of the semiconductor element due to deterioration of the resin package.
  • the lid (LID) consists of a transparent material when semiconductor element SM is an optical element or optical sensor, but in other cases may consist of an opaque material.
  • FIG. 9 is a cross-section of the package shown in FIG. 7 along arrows IX-IX, showing lead frame 100 sandwiched between molds M 1 and M 2 .
  • Lead frame 100 is made of copper, and its surface has been black-oxide treated.
  • An aqueous solution containing sodium chlorite, trisodium phosphate and sodium hydroxide for example can be used for the black-oxide treatment solution.
  • Black-oxide treating the lead frame dramatically increases the adhesive strength between the resin material and the lead frame, making the manufactured resin package less likely to detach from the lead frame.
  • a resin package such a lead frame 100 is prepared and then sandwiched between two facing molds M 1 and M 2 . That is, lead frame 100 is arranged in the space between molds M 1 and M 2 .
  • the resin material RE in this space is injected via resin injection gate IJ.
  • Resin injection gate IJ is the outlet of a resin injection conduit provided in mold M 1 , and this resin injection conduit also has inlet IJ 1 for resin material RE provided on the outside of mold M 1 .
  • the facing surfaces of molds M 1 and M 2 are flat on the outside of rectangular region OL (see FIG. 7 ), but project as rectangular columns in the area corresponding to indentation DP of the resin package inside rectangular region OL (see FIG. 8 ), with those parts corresponding to the side walls forming indented spaces CSW as oblong grooves.
  • Temperature T 1 (° C.) of the molds during injection of the resin material and resin material flow initiation temperature T 2 (° C.) are such that T 1 (° C.) ⁇ T 2 (° C.) ⁇ 70 (° C.).
  • T 2 (° C.) When resin material is injected under such temperature conditions, enough resin flows inside molds M 1 and M 2 to form a resin molded body with a regular appearance.
  • Another advantage is that the adhesive strength between the lead frame and resin is increased.
  • liquid crystal polymers ordinary have low hygroscopicity, the reliability of the semiconductor element on die pad D can be maintained, and burr can be controlled, which should result in improved resin package productivity.
  • T 1 of both molds reaches 300° C.
  • the resulting resin molded body is removed from the molds when the mold temperatures reach 252° C.
  • the oxidized copper is stripped from the black-oxide treated surface, which is then given a conductive plate of Au or the like to complete the resin package.
  • FIG. 10 is a place view of a unit pattern (reverse) of a comparative example.
  • connection leads extend along the diagonals from the 4 corners of die pad D.
  • the resin flows converge at the diagonal as shown by the arrows, forming a weld.
  • thermoplastic resin As the resin material, and examples of such thermoplastic resins include polystyrene resin, acrylic resin, polycarbonate resin, polyester resin, polyamide resin, polyacetal resin, polyphenylene ether resin, fluorine resin, polyphenylene sulfide resin, polysulphone resin, polyarylate resin, polyetherimide resin, polyethersulphone resin, polyetherketone resin, liquid crystal polyester resin, polyamideimide resin, polyimide resin and the like, with polyester resin, polyamide resin, polyphenylene sulfide resin and liquid crystal polyester resin being preferred, and liquid crystal polyester resin (liquid crystal polymer) being especially preferred from the standpoint of fluidity, heat resistance and rigidity. These resins can be used individually, or more than one can be used simultaneously.
  • a suitable inorganic filler can also be mixed with this resin material.
  • inorganic fillers that can be mixed with the resin material include glass fiber (milled glass fiber, chopped glass fiber and the like), glass beads, hollow glass spheres, glass powder, mica, talc, clay, silica, alumina, potassium titanate, wollastonite, calcium carbonate, magnesium carbonate, sulfate of soda, calcium sulfate, barium sulfate, calcium sulfite, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, calcium silicate, quartz sand, silica stone, quartz, titanium oxide, zinc oxide, iron oxide, graphite, molybdenum, asbestos, silica alumina fiber, alumina fiber, plaster fiber, carbon fiber, carbon black, white carbon, diatomaceous earth, bentonite, sericite, shirasu (volcanic ash), black lead and other inorganic fillers, and potassium titanate whiskers, alumina whiskers, aluminum borate whiskers, silicon carbonate whiskers, silicon nitride whiskers
  • FIG. 11 is a plane view of a specific lead frame site showing a variant of excess resin reservoir H 4 , which functions as a pressure loss section.
  • excess resin reservoir H 4 described previously was formed by half etching of the lead frame, but excess resin reservoir H 4 can be made to function as a pressure loss section if its width w 3 is made smaller than width w 2 . In this case, excess resin reservoir H 4 can be formed after half etching, or from a through hole. Similar variants of pressure loss sections are also possible in other places.
  • the lead frame shown in FIGS. 2 and 3 was prepared, and this lead frame was black-oxide treated by being immersed in an aqueous solution containing sodium chlorite, trisodium phosphate and sodium hydroxide.
  • the black-oxide treated lead frame was arranged in the space between molds M 1 and M 2 .
  • the molds were then cooled, and once the mold temperatures reached 252° C. the molded resin package was removed from the molds.
  • a resin package was manufactured as in Example 1 except that a lead frame having a through hole substituted for groove H 6 formed by half-etching was used as the lead frame shown in FIGS. 2 and 3 .
  • a resin package was manufactured as in Example 1 except that a lead frame having a through holes substituted for excess resin reservoir H 4 and groove H 6 was used as the lead frame shown in FIGS. 2 and 3 .
  • a resin package was manufactured as in Example 1 except that a lead frame having through holes substituted for pressure loss sections H 1 and groove H 6 was used as the lead frame shown in FIGS. 2 and 3 .
  • a resin package was manufactured as in Example 1 but using the lead frame shown in FIG. 10 .
  • a resin package was manufactured as in Example 2 except that the space between molds M 1 and M 2 was filled with the melted liquid crystal polymer at the point when the temperature (T 1 ) of molds M 1 and M 2 reached 261° C.
  • a resin package was manufactured as in Example 3 except that the space between molds M 1 and M 2 was filled with the melted liquid crystal polymer at the point when the temperature (T 1 ) of molds M 1 and M 2 reached 261° C.
  • a resin package was manufactured as in Comparative Example 1 except that the space between molds M 1 and M 2 was filled with the melted liquid crystal polymer at the point when the temperature (T 1 ) of molds M 1 and M 2 reached 261° C.
  • a resin package was manufactured as in Comparative Example 2 except that the space between molds M 1 and M 2 was filled with the melted liquid crystal polymer at the point when the temperature (T 1 ) of molds M 1 and M 2 reached 261° C.
  • Air-tightness test Air-tightness testing was next performed using the resin packages of Examples 1 through 6 and Comparative Examples 1 through 4.
  • FIG. 12 is an outline showing air-tightness testing system 101 used in this air-tightness testing.
  • air-tightness testing system 101 comprises chamber 102 , gas supply part 103 that supplies inactive He gas to the inside of chamber 102 , and gas exhaust part 104 that exhausts air from the inside of chamber 102 through the bottom of chamber 102 .
  • resin package 105 was arranged upside-down on the bottom of chamber 102 so that side walls SW of resin package 105 surrounded gas exhaust part 104 at the bottom of chamber 102 .
  • the gas in space S formed by chamber 102 and the side walls SW of resin package 105 was removed by gas exhaust part 104 , fixing resin package 105 to the bottom of chamber 102 .
  • He was supplied to chamber 102 via gas supply part 103 , and the air-tightness of the main body of the resin package was investigated by detecting He at gas exhaust part 104 .

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Led Device Packages (AREA)
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WO2017181399A1 (en) * 2016-04-22 2017-10-26 Texas Instruments Incorporated Improved lead frame system
US10573581B2 (en) * 2016-09-29 2020-02-25 Texas Instruments Incorporated Leadframe
US10186478B2 (en) * 2016-12-30 2019-01-22 Texas Instruments Incorporated Packaged semiconductor device with a particle roughened surface
JP7021970B2 (ja) * 2018-02-13 2022-02-17 株式会社三井ハイテック リードフレーム、樹脂付きリードフレーム、樹脂付きリードフレームの製造方法および半導体装置の製造方法
JP6986539B2 (ja) * 2019-11-25 2021-12-22 Ｔｏｗａ株式会社 樹脂成形済リードフレームの製造方法、樹脂成形品の製造方法、及びリードフレーム

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KR20100023766A (ko) 2010-03-04
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JP2010074152A (ja) 2010-04-02
TWI479625B (zh) 2015-04-01
KR101591094B1 (ko) 2016-02-02
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CN101656243B (zh) 2013-06-12
US20100044844A1 (en) 2010-02-25

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