US6930343B2 - Nonvolatile memory device utilizing a vertical nanotube - Google Patents

Nonvolatile memory device utilizing a vertical nanotube Download PDF

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Publication number
US6930343B2
US6930343B2 US10/713,214 US71321403A US6930343B2 US 6930343 B2 US6930343 B2 US 6930343B2 US 71321403 A US71321403 A US 71321403A US 6930343 B2 US6930343 B2 US 6930343B2
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memory device
layer
nanotube array
nanotube
memory cell
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US20040095837A1 (en
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Won-bong Choi
Jo-won Lee
Ho-kyu Kang
Chung-woo Kim
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Definitions

  • the present invention relates to a nonvolatile memory device. More particularly, the present invention relates to a high-density memory device using a carbon nanotube as a vertical electron transport channel.
  • Memory devices using a semiconductor generally include a transistor, which serves as a switch for forming a current path when information is written to or read from a capacitor, and a capacitor, which stores and preserves electrical charges.
  • the transistor In order to provide a large-intensity current flow in the transistor, the transistor needs to have a high transconductance (gm) characteristic.
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • a conventional MOSFET mainly includes a control gate formed of doped polycrystalline silicon and a source and drain region formed of doped crystalline silicon.
  • the transconductance of the MOSFET is inversely proportional to a channel length and a thickness of a gate oxide layer, but is proportional to a surface mobility, a dielectric constant of the gate oxide layer, and a channel width. Since the surface mobility and the dielectric constant of an oxide layer are predetermined according to material, such as a silicon wafer with an orientation and a silicon oxide layer, a high transconductance can be accomplished by increasing a ratio of the channel width to the channel length or decreasing the thickness of the oxide layer.
  • a physical size of the conventional MOSFET needs to be reduced in order to manufacture a high-density memory device.
  • a size of the gate and a size of the source and drain region also need to be reduced, which causes various problems.
  • a cross-sectional area of the control gate is reduced, which induces a large electrical resistance in a transistor.
  • Reduction of the sizes of the source and drain region causes the thickness, i.e., junction depth, to be reduced.
  • a reduction in the junction depth induces a large electrical resistance or occurrence of a punch-through phenomenon.
  • the punch-through phenomenon occurs when a depletion layer of a source contacts a depletion layer of a drain due to a decrease in a distance between the source and the drain. Consequently, it is impossible to control a current flow.
  • size reduction of such a memory device decreases the width of a channel functioning as a current path to below about 30 nm, thereby disturbing the flow of current. As a result of this disturbance, the memory device operates abnormally. Accordingly, the use of a conventional silicon MOSFET is limited in accomplishing a high-density memory device.
  • the present invention provides a high-density memory device that prevents a resistance from increasing due to miniaturization and reduces the risk of an abnormal operation by using a nanotube.
  • a memory device includes a substrate having a source region, a nanotube array including a plurality of nanotube columns that are vertically grown on the substrate such that a first end of the nanotube array is in contact with the source region, the nanotube array functioning as an electron transport channel, a memory cell formed around an outer side surface of the nanotube array, a control gate formed around an outer side surface of the memory cell, and a drain region in contact with a second end of the nanotube array and the memory cell, wherein the second end of the nanotube array is distal to the first end of the nanotube array.
  • the substrate is made of aluminum oxide, silicon, or a mesoporous material.
  • the plurality of nanotube columns are made of carbon, boronitride, or gallium phosphate.
  • the memory cell includes a first insulation layer formed around the outer side surface of the nanotube array; an electron storing layer formed around an outer side surface of the first insulation layer; and a second insulation layer formed around an outer side surface of the electron storing layer to be in contact with the control gate.
  • the first insulation layer and the second insulation layer are silicon oxide layers.
  • the electron storing layer is a silicon layer or a silicon nitride layer.
  • the memory cell has a thickness of less than about 200 nm.
  • the electron storing layer has a thickness of about 100 nm or less.
  • the electron storing layer may be a porous layer including a plurality of nanodots, each of the nanodots being filled with an electron storing material.
  • the electron storing material is silicon or silicon nitride.
  • the porous layer is an aluminum oxide layer.
  • the nanodots have a diameter of about 100 nm or less.
  • the present invention provides a high-density and large capacity nonvolatile memory device by utilizing a nanotube as an electron transport channel and vertically arranging a plurality of nanotube columns.
  • FIG. 1A illustrates a cross-sectional view of a memory device according to a first embodiment of the present invention
  • FIG. 1B illustrates a perspective view of a memory device according to the first embodiment of the present invention
  • FIG. 2 illustrates a cross-sectional view of a memory device according to a second embodiment of the present invention
  • FIG. 3 is a photograph of carbon nanotubes grown on a substrate in order to manufacture a memory device according to the first embodiment of the present invention.
  • FIG. 4 is a graph showing current-voltage (I-V) characteristics of a memory device according to the first embodiment of the present invention.
  • FIGS. 1A and 1B illustrate a cross-sectional and a perspective view, respectively, of a memory device according to a first embodiment of the present invention.
  • a substrate 11 includes a source region (S) 13 .
  • a nanotube column 10 is vertically positioned on a top surface of the substrate 11 to be connected to the source region 13 .
  • a memory cell 19 is formed around an outer surface of the nanotube column 10 .
  • a control gate (G) 17 is formed around an outer surface of the memory cell 19 .
  • a drain region (D) 15 is formed on a top surface of the nanotube column 10 and the memory cell 19 .
  • a plurality of memory devices having this structure may form an array on the substrate 11 .
  • the substrate 11 is made of aluminum oxide (Al 2 O 3 ), silicon (Si), or mesoporous material.
  • the source region 13 is formed by doping the substrate 11 with ions.
  • the nanotube column 10 can be formed using a semiconductor nanotube such as a carbon nanotube, a boronitride (BN) nanotube, or a gallium phosphate nanotube.
  • Nanotubes are divided into metal nanotubes and semiconductor nanotubes according to electrical characteristics. Metal nanotubes are not influenced by a gate voltage and have linear current-voltage characteristics. Semiconductor nanotubes are influenced by a gate voltage and have non-linear current-voltage characteristics.
  • a memory device according to the present invention uses semiconductor nanotubes so that the flow of electrons, i.e., current, moving through the nanotube columns 10 may be controlled by applying a gate voltage to the control gate 17 .
  • Carbon nanotubes utilized as nanotube columns 10 may be grown on the substrate 11 using arc discharge, laser vaporization, plasma-enhanced chemical vapor deposition (PECVD), thermal chemical vapor deposition, or a vapor phase growth such that a first end of each carbon nanotube columns 10 is in contact with the source region 13 .
  • PECVD plasma-enhanced chemical vapor deposition
  • thermal chemical vapor deposition thermal chemical vapor deposition
  • the memory cell 19 formed around the outer side surface of the nanotube column 10 may be made of an oxide-nitride-oxide (ONO) layer, in which oxide layers 19 a and 19 c function as insulation layers and a nitride layer 19 b functions as an electron storing layer.
  • the ONO layer may be formed using chemical vapor deposition (CVD) or heat treatment.
  • the nitride layer 19 b may be made of silicon nitride (Si 3 N 4 ). Alternately, a silicon layer may be used instead of the nitride layer 19 b . It is preferable that the thickness of the memory cell 19 is less than about 200 nm and the thickness of the electron storing layer 19 b is about 100 nm or less.
  • the control gate 17 is formed around the outer side surface of the memory cell 19 .
  • the drain region 15 is formed on the top surface of the nanotube column 10 and the memory cell 19 to be in contact with a second end, which is distal to the first end, of the nanotube column 10 .
  • FIG. 2 illustrates a cross-sectional view of a memory device according to a second embodiment of the present invention.
  • the memory device shown in FIG. 2 has the same structure as the memory device according to the first embodiment, as shown in FIGS. 1A and 1B , with the exception that a memory cell 29 includes a porous layer 29 b containing a nanodot 28 filled with an electron storing material.
  • Reference numerals 29 a and 29 c indicate layers having the same functions as the oxide layers 19 a and 19 c , respectively, shown in FIGS. 1A and 1B .
  • each of the nanodots 28 are filled with an electron storing material, such as silicon or silicon nitride, using CVD or sputtering.
  • the porous layer 29 b which may be an aluminum oxide layer, functions as an electron storing layer.
  • each of the nanodots has a diameter of about 100 nm or less.
  • FIG. 3 is a photograph of carbon nanotubes grown on a substrate in order to manufacture a memory device according to the first embodiment of the present invention.
  • FIG. 4 is a graph showing current-voltage (I-V) characteristics of a memory device according to the first embodiment of the present invention.
  • I-V current-voltage
  • an ultrahigh density memory device can be implemented using nanotubes. Since the ultrahigh density memory device can be structured on a substrate without performing a doping process by using self-assembly when the present invention is implemented, manufacturing processes therefor can be simplified.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Non-Volatile Memory (AREA)
US10/713,214 2002-11-15 2003-11-17 Nonvolatile memory device utilizing a vertical nanotube Expired - Lifetime US6930343B2 (en)

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KR1020020071041A KR100790859B1 (ko) 2002-11-15 2002-11-15 수직 나노튜브를 이용한 비휘발성 메모리 소자
KR2002-71041 2002-11-15

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EP (1) EP1420414B1 (zh)
JP (2) JP4047797B2 (zh)
KR (1) KR100790859B1 (zh)
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DE (1) DE60300477T2 (zh)

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US20070069301A1 (en) * 2005-09-28 2007-03-29 Infineon Technologies Ag Power transistor
US20070123028A1 (en) * 2004-10-04 2007-05-31 International Business Machines Corporation ("Ibm") Methods of forming low-k dielectric layers containing carbon nanostructures
KR100820174B1 (ko) 2006-12-05 2008-04-08 한국전자통신연구원 수직구조의 탄소나노튜브를 이용한 전자소자 및 그제조방법
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KR100695167B1 (ko) * 2006-01-04 2007-03-14 삼성전자주식회사 다중벽 탄소나노튜브를 이용한 불휘발성 탄소나노튜브메모리 소자 및 그 동작방법
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KR100749751B1 (ko) 2006-08-02 2007-08-17 삼성전자주식회사 트랜지스터 및 그 제조 방법
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