US2623102A - Circuit element utilizing semiconductive materials - Google Patents

Circuit element utilizing semiconductive materials Download PDF

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Publication number
US2623102A
US2623102A US91593A US9159349A US2623102A US 2623102 A US2623102 A US 2623102A US 91593 A US91593 A US 91593A US 9159349 A US9159349 A US 9159349A US 2623102 A US2623102 A US 2623102A
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Prior art keywords
current
electrons
zone
holes
electrode
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US91593A
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Shockley William
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AT&T Corp
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Bell Telephone Laboratories Inc
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Priority to BE489418D priority Critical patent/BE489418A/xx
Priority to NL84061D priority patent/NL84061C/xx
Priority claimed from US35423A external-priority patent/US2569347A/en
Priority to US91593A priority patent/US2623102A/en
Priority to US91594A priority patent/US2681993A/en
Priority to DEP41700A priority patent/DE814487C/de
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to FR986263D priority patent/FR986263A/fr
Priority to GB15512/49A priority patent/GB700231A/en
Priority to CH282854D priority patent/CH282854A/de
Publication of US2623102A publication Critical patent/US2623102A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1256—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a variable inductance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1296—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the feedback circuit comprising a transformer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • This invention relates to means for and methods of translating or controlling electrical signals and more particularly to circuit elements utilizing semiconductors and to systems including such elements.
  • One general object of this invention is to provide new and improved means for and methods of translating and controlling, for example amplifying, generating, modulating, intermodulating or converting, electric signals.
  • Another general object of this invention is to enable the eiiicient, expeditious and economic translation or control of electrical energy.
  • translation and control of electric signals is eected by alteration or regulation of the conduction characteristics of a semiconductive body. More specifically, in accordance with one broad feature of this invention, such translation and control is effected by control of the characteristics, for example the impedance, of a layer or barrier intermediate two portions of a semiconductive body in such manner as to alter advantageously the now of current between the two portions.
  • One feature of this invention relates to the control of current flow through a semiconductive body by means of carriers of charge of opposite sign to the carriers which convey the current through the body.
  • Another feature of the invention pertains to controlling the current flowing through a semiconductive 'cody by an electrical field or fields in addition to those responsible for normal current flow through the body.
  • An additional feature of this invention relates to a cody of semiconductive material, means for making electrical connection respectively to tw portions of said body, means for making a third electrical connection to another portion of the body intermediate said portions and circuit means including power sources whereby the influence of the third connection may be made to control the 'dow of current between the other connections.
  • Another feature pertains to a semiconductive body comprising successive ones of material of opposite conductivity type each separated from the other by an electrical barrier, means for ina-ling external connection respectively to two oi said zones, and means for making other connec- (Cl. 17E-365) Z tions intermediate to the two for controlling the flow of current across one or more of the electrical barriers.
  • a further feature resides in a body oi semiconductive material comprising two zones of material of opposite conductivity type separated by a barrier, means for making external electrical connections respectively to each zone and means for making a third connection to the body at the barrier for controlling the flow of current between the other two connections.
  • An additional feature pertains to a semiconductive body comprising two zones of material of like conductivity type with an intermediate sone of material of opposite conductivity type, the zones being separated respectively by barriers, means for making electrical connections respectively to the two Zones, and means for making a third connection to the intermediate zone for controlling the effectiveness of a barrier to thereby control the flow of current between the zones of like material.
  • Another feature of this invention involves a semiconductive body which may be used for voltage and power amplification when associated with means for introducing mobile carriers of charge to the body at relatively low voltage and extracting like carriers at a relatively high voli'- age.
  • a further feature of the invention involves creation of voltage and barrier conditions adjacent an output connection or point of extraction of current whereby current amplification in addition to voltage amplification may be obtained.
  • Fig. 1 shows in section one embodiment of the invention with an appropriate circuit
  • Fig. 2 shows in section another embodiment of the invention with illustrative circuit connections
  • Fig. 3 shows in section an embodiment somswhat similar to that of Fig. 2 with certain structural differences and with a suitable circuit arrangement
  • Figs. 3A and 3B show in fractional sections modifications of Fig. 3;
  • Fig. 4 shows in section a modification of Fig. S in which an embedded electrode is used
  • Fig. 5 shows in fractional section a further modification of the type of device shown in Fig. 4
  • Fig. 6 shows an embodiment of the invention similar to that illustrated in Fig. 3 with a different arrangement for making connection to part of the device;
  • Fig. 7 shows an assembled slab structure embodying some particular structural details
  • Fig. 8 shows, with an appropriate circuit, a sectional view of an embodiment of the invention having more than one control portion
  • Fig. 9 shows in section a device similar to that of Fig. 8 with a different circuit arrangement.
  • Fig. 10 shows a two-electrode device otherwise similar to that of Fig. 3, adaptable as a transit time diode with energy level diagrams useful in explaining its operation;
  • Fig. 11 is a diagrammatic showing of curves associated with circuit elements to aid in explaining certain principles of the invention.
  • Fig. 12 is a diagrammatic showing similar to that of part a of Fig. 11 to illustrate the effect of using different materials for certain parts of the devices contemplated by the invention.
  • Fig. 13 is a diagrammatic illustration of conditions in the output portion of devices made in accordance with current amplifying features of the invention.
  • Semiconduction may be classified also as of two types, one known as conduction by electrons or the excess process of conduction and the other known as conduction by holes or the defect process of conduction.
  • holes which refers to carriers of positive electric charges as distinguished from carriers, such as electrons, of negative charges will be explained more fully hereinafter.
  • Semiconductive materials which have been found suitable for utilization in devices of this invention include germanium and silicon containing minute quantities of signicant impurities which comprise one Way of determining the conductivity type (either N or P-type) of the semiconductive material.
  • the conductivity type may also be determined by energy relations within the semiconductor.
  • N-type and P-type are applied to semiconductive materials which tend to pass current easily when the material is respectively negative or positive with respect to a conductive contact thereto and with diiculty when the reverse is true, and which also have consistent Hall and thermoelectric effects.
  • signicant impurities is here used to denote those impurities which affect the electrical characteristics of the material such as its resistivity, photosensitivity, rectification, and
  • impurities is intended to include intentionally added constituents as well as any which may be included in the basic material as found in nature or as commercially available.
  • Germanium and silicon are such basic materials which, along with some representativo impurities, will be noted in describing illustrative examples of the present invention.
  • Lattice defects such as vacant lattice sites and interstitial atoms when effective in producing holes or electrons are to be included in significant impurities.
  • deviations from stoichiometric compositions and lattice defects, such as missing atoms or interstitial atoms, may constitute the signiiicant impurities.
  • small amounts of impurities such as phosphorus in silicon, and antimony and arsenic in germanium, are termed donor impurities because they contribute to the conductivity of the basic material by donating electrons to an unfilled conduction energy band in the basic material.
  • the donated negative electrons in such a case constitute the carriers of current and the material and its conductivity are said to be of the N-type.
  • This is also known as conduction by the excess process.
  • Small amounts of other impurities for example boron in silicon or aluminum in germanium, are termed acceptor impurities because they contribute to the conductivity by accepting electrons from the atoms of the basic material in the filled band.
  • acceptor impurities for example boron in silicon or aluminum in germanium
  • Bodies of semiconductive material for use in the practice of this invention may also be prepared by pyrolytic deposition of silicon or germanium with suitable significant impurities. Methods of preparation are outlined in United States patent applications of K. H. Storks and G. K. Teal Serial No. 496,414, led July 28, 1943; G. K. Teal Serial No. 655,695, filed March 20, 1946; and G. K. Teal Serial No, 782,729, filed October 29, 1947.
  • barrier or electrical barrier used in the description and discussion of devices in accordance with this invention is applied to a high resistance interfacial condition between contacting semiconductors of respectively opposite conductivity types or between a semiconductor and a metallic. conductor whereby current passes with relative ease in. one direction and with relative dimculty in the other.
  • the devices to be described are relatively small which has necessitated some eXaggeration of proportions in the interest of clarity in the illustrations. which are mainly or essentially diagrammatic. This is particularly true of the intermediate or intervening layers which are usually very thin.. In some cases this layer, e. g. the P-layer in Fig. 11, has beenshown wider than the flanking N-layers in order that the accompanying energy level diagrams. may be more clearly shown. The dimension in the direction perpendicular to the paper may vary in accordance with the cross-sectional area required.
  • the device. shown in Fig. 1 comprises a body or block of ⁇ semiconductive material, for example gormanium, containing signicant impurities.
  • The. block comprises. two, Zones i andil respectively or N and P-type materials separated, by the barrier l2.
  • the opposite ends of :le blocs. are provided with connections itk and it which. may be wnetallic coatings, such as cured. silver paste, a vapor-deposited metal coating or the like.
  • Means for making connection to the barrier region of the block comprise a drop of electrolyte l5 such as glycol borate in which is immersed a wire loop
  • Conductor l'l leads from connection it: to a load RL and thence through a power source, such as battery I3, and baci; via conductor le tothe body at connection [3.
  • a source 2l of signal voltage and a bias source 2 2 are connected from It at the barrier tov connectionv I3 by conductors 23, 2t and 25.
  • N and P zones as shown in Fig. 1, the negative pole of source It is connected to the E' zone and the positive pole to the N Zone.
  • connection to the body at the carrier through the electrolyte l5 is a means of impressing a eld at this barrier and parallel thereto, and is in the natu-re of a capacitative connection since thereis substantial isolation between the wire loop iS and the surface of the body.
  • the biasing source 22 is shown with its negative pole connected to the barrier connection ld since better results have been obtained with such a connection. However, a positive bias may be used with goed results.
  • a successfully operated device or" thisA type was about 2 centimeters long, .5 centimeter wide and 0.5 centimeter thick..
  • the barrier was about midwaybetween the endl faces and substantially parallel to them.
  • the bias voltages upon the; electrodes le, and M relative to electrode it were of the same orderof magnitude, between ll) and 29 volts.
  • the device disclosed in Fig. 2 comprises two blocks. or bodies to. and si of insulating ⁇ material, such as a ceramic, with. an electrode 32 interposed between these blocks and electrodes 33 and Sli' secured to their outer ends.l A nlm of P-type germanium is applied to one f ace of the electrodeceramic assembly making, ohmic contactwith. the electrodes.. This hlm is exaggerated as to, thiol?.u ness; in thegure..
  • The. electrode 32. may be made of an antimony or phosphorus bearing alloy, such 6.
  • the heat treatment for diiusing antimony from the electrode 32 into the zone 35 may be at about 650 C. and for diffusing phosphorus from Phosphorbronze at about the same temperature.
  • the diffusion ofthe signicant impurity into the lm may be so controlled, as by regulating the time of the heat treatment, that the material at the surface ofthe zone 35 opposite to that contacted by the electrode t2 is substantially neutral or only slightly N-type or, on the other hand, left as P-type.
  • the electrodes 32, 33 and 34 may be called respectively, base, emitter and collector.
  • the designations B, E and C have been applied to these and like electrodes in other figures tov aid in understanding the structure.
  • the device of Fig. 2 may be operated as an amplier or control device by applying a relatively small positive bias, for example of 'the order ci' one volt, and a signal from sources such as batterydl and signal source @2, respectively, to electrode 33 through input connections i3 and the negative side of the battery il being connected to the base electrode 32.
  • the output circuit includes a relatively high voltage source, for ern ample of voltage between 10 and 10S volts, such as battery llt with its negative pole connected to 34, and. its positive pole to base electrode 32. lneluded in this circuit is a load represented by a resistance RL.
  • the output current is in the direction of difficult flow through reversely operated barrier 39 so the output is of high impedance.
  • the output current is comparable to the input current butv through a much higher imw pedance; therefore, the output power is higher than that at the input.
  • a more complete errplanation of the operation of this and the other devices will be given subsequent to a description of the other embodiments of the invention. lf a thin layer of P-type material is left at the surface opposite to whore 32 makes contact, the control iield will vary the elective thickness of this layer to aiect current flow.
  • the device of Fig. 3 comprises a layer cr 5
  • the P layer may be made amenable to control by making it very thin, e. g.
  • the impedance of the P zone to electron flow will be low enough so that introduction of holes into the P zone by the positive bias thereon will have a considerable control effect. Electrons may thus be made to flow with comparative ease through the P Zone due to the effect of the voltage on the base electrode and will be drawn to the collector 59 and abstracted.
  • the input is of low impedance, the output of high impedance, and the input and output currents comparable with resulting power amplification.
  • Fig, 4 there is shown a device similar to the one in Fig. 3 but with a different means for connecting to the intermediate Zone of semiconductive material.
  • is interposed between N zones 92 and 63.
  • a metallic grid, sections of which are shown at 04, is embedded in the P zone and has a projecting portion 65 to which external connection may be made. This grid serves as the base electrode.
  • the emitter and collector electrodes 95 and 61, respectively, and the respective N zones are similar to those in the device of Fig. 3.
  • This device may be operated like the device of Fig. 3 with appropriate connections to the emitter, base and collector electrodes.
  • Fig. 5 shows a portion of a device similar to that of Fig. i with modifications in detail.
  • a relatively thin layer of the semiconductive material adjacent each electrode is made of material having a higher concentration of significant impurities of the type characterizing that conductivity type.
  • These high impurity layers will have higher conductivity than the rest of the semiconductive material in the given zone and thus less tendency toward barrier formation at the electrode-semiconductor interface.
  • These layers are 68, 99 and for the emitter, base (grid), and collector electrode, respectively.
  • Such high impurity layers may be used in the other embodiments of the invention.
  • is applied to the side of the grid facing the emitter electrode. The flow of charge carriers is thus directed through the gridrbetween its conductors.
  • the device shown in Fig. 6 is similar to the one shown in Fig. 3 with a layer 53a of reduced extent allowing a contact 51a on a face of the P layer 5 I,
  • Fig. 7 there are shown a plurality of assembled semiconductive layers or slabs H0 to
  • 4 is included in place of part of the intermediate P layer and the N layer on the collector side is tapered toward the insulator to reduce sidewise flow of electrons therein and thus path length from B to the N layer on the collector side.
  • Fig. 8 shows a configuration which may be used as a mixer or converter. Five layers or zones 9
  • This function will be non-linear in the voltages and will contain quadratic terms involving products of the voltages on 96 and 91. These product terms will play the same role as in other non-linear mixers or converters and will lead to collector current components having frequencies which are combinations of those applied to 96 and 91.
  • the voltages may be applied respectively to 96 and 91 from sources
  • the signal voltages could be from a local oscillator and an incoming signal, for example, or be other signals to be mixed.
  • the output is taken from
  • Lc and CB are isolating chokes and blocking condensers, respectively.
  • a device like that in Fig. 8 is provided with an additional electrode
  • the input is applied to layer 94 and the mixed output taken from
  • the sources of energy correspond to those in Fig. 8 with source
  • LT and CT are tuning elements of the oscillator section, Le and CB are the chokes and blocking condensers and T the coupling transformer.
  • current amplification may be o'btained by setting up at the collector electrode a condition similar to that required for rectification. This may be done by making the collector electrode a rectifier contact of the point or large area type rather than a substantially ohmic contact. Another way of doing this is to leave the actual contact at the electrode ohmic and to introduce a small region of opposite type material so that of the collector zone around the collector electrode. For example, in a device like that of Fig. 3 a zone 80 of P-type material may be introduced between the collector electrode 58 and the N zone 53, as shown in Fig. 3A, or, as shown in Fig. 3B, a point contact 8
  • Fig. l0 represents Such a device. It comprises three substantially parallel layers Ne, P and Nc, of alternating impurity content with two metal electrodes, one at either side. In the example shown, the conductivity is supposed to be entirely due to electrons. When voltages are applied as indicated at (a) in Fig. 10, there will be an electron current owing from Ne to Nc. This current will, of course, increase with increasing applied potential. When the potential Va is increased there will be a corresponding increase in the potential V2. As a consequence of this, the electron ow from V1 through accende the P region of V2 will be increased.
  • Fig. ll there is shown a representation of a semiconductorstructure which i's lanalogous to a three-electrode vacuum tube.
  • diagra-ms a, c and d show the energies of electrons in the filled and conduct-ion bands in ⁇ these'micon'- ductor in :the customary Way.
  • the physical ⁇ struetureo'f the semiconductor is representedat e and consists of three regions or" semiconductor'with connecting electrodes 'corresponding'to the cathode, grid and plate of "a vacuum tube asshown at The different parts o the semiconductor are in intimate "contact, so that there are no surface states (such as occur on the free'suria'c'es of sehlicond'uct'ors') or other major imperfectionsat the boundaries.
  • the ,principal variation in ⁇ properties should arise from the Varying concentration of impurities as shown at b which represents the concentration of donors minus the .concentration of acceptors.
  • the conductivity in the N layers i's due to electrons and in the P layer to holes.
  • the diagram has been drawn to show a much higher electron concentration in N than holes in P. In ⁇ fact, lthe N concentration is so high that a degenerate gas is formed as in a metal.
  • Fig. 12 Diagrams a and b of this iigure correspond to equilibrium or zero current situations for the device under consideration. Under these conditions the number of holes in region Ne is determined by the potential energy diiierence U1. If a potential difference is applied between Ne and P in the forward direction across the barrier as is shown in Fig. 11d for example, then the concentration of holes in Ne due to flow from P will tend to increase exponentially with the Voltage difference Vz-Vi. Similarly the concentration of electrons flowing from Ne to P will tend to increase exponentially in the same way starting with a value determined by U2. Hence, if U2 is initially less than U1 the tendency of electrons to flow from Ne to P will be greater than the tendency of holes to iiow from P to Ne.
  • Figs. 11 and 12 are designed so as to produce this desirable direrence between U2 and U1.
  • this is accomplished by having different concentrations of impurities in Ne and P in such a way that the net concentration of the electrons in Ne is greater than the concentration of holes in P.
  • the electron concentration is so high that a degenerate situation exists
  • Fig. 12a a non-degenerate situation is shown.
  • Fig. 12b this effect is further enhanced by using two dierent semiconductors.
  • the semiconductor used for Ne has a wider energy gap since it is N-type. This increases the value of U1 compared to U2 in the P region.
  • the Ne zone may be of N-type silicon and the other two zones of P and N-type germanium respectively.
  • the device gives out alternating current power.
  • the power is taken out between plate and cathode and the alternating current and voltage under operating conditions are like those of a negative resistance. That is, when the plate potential swing is negative, the plate current swing (i. e., current into the tube, or electrons out) is positive. The reason for this behavior is that the plate impedance is relatively high. Hence, when the grid swing is plus the plate current is increased over the direct current value and remains increased even though a negative plate swing occurs. Hence, power can be delivered to the plate.
  • the Nc-P barrier acts in much the same way as the grid-plate region of the vacuum tube. rIhere is a steady reverse current; however, this is relatively insensitive to plate potential.
  • the electron current due to the difference in potential between E and B, is also relatively insensitive to collector voltage since once the electrons have passed the maximum potential point in P they are practically certain to be drawn to C. Hence the alternating current across the NwP barrier can be made out of phase with the voltage on C and output power can be delivered.
  • accesos Consideration will next be given to a further means of utilizing the separability of the two conduction processes in semiconductors in order to increase the alternating current Ic at C compared to the current Ie at E and Ib at B.
  • Fig. i3, diagram (a) the region just in front of the metal electrode C is shown, as if a layer of P-type material Pc were inserted between Nc and C. This may be done by actually inserting a thin layer of P-type material between No and the electrode C or by replacing the electrode C- by a point 'contact such as has been shown in Fig. 3B.
  • the voltage on B is made positivethe Nc-Pc junction is operated in the forward direction.
  • an appreciable fraction of the current between Pc and Ne may be holes, and this fraction will increase if Pc is made more P-type.
  • a hole current from Pc into Ne 'and then to P is desirable. I-Ience the drawing is made as if Pc had more holes than NC had electrons. The advantage of this structure is that it will lead to a multiplication of electron current arriving at the collector.
  • Diagram b in Fig. 13 shows the situation for no applied voltages on an enlarged scale with the electrons and holes depicted. In thisY case the net hole current and electron currents are each Zero.
  • diagram c, Fig. 13 the situation is shown "when an electron current is iiowing in 'from P. In order for this current to flow away to the right, the potential hill between Nc and C 'must be reduced. This is accompished by electrons accumulating at If until their charge raises the potential sufficiently. They then ilow oi to C. This shift in potential also increases the easiness with which holes from Pc can enter Nc and then ilow to P. The situation is entirely similar with the roles of holes and electrons reversed, to that at the emitter.
  • the layer Pc it is not necessary, however, 'for the layer Pc to have an excess of acceptors for the current enhancement discussed above to beaccoinplished.
  • the essential feature is that the contact between the metal and the Nc region presents a smaller barrier for hole flow than for electrn'i'low. This can be accomplished as described'above byadding a sufricient numberof acceptors to Pe. However, it will also occur if the contact between C and Nc has a sufficiently high rectifying barrier, as is shown in Fig. 13D and which may be produced for example by use of a rectifying contact as in Fig. 3B.
  • the alternating current part of the current Ic may be made much larger than that of the current Ie and, consequently, the ratio of powers vinthe outputand input circuits may be increased bycurrent amplification aswell as by ⁇ volta-ge ampliiication.
  • a maximum limitation on the thickness of the P Zone is establish-ed by the rrecombination ⁇ of holes and electrons.
  • the P zone must not be so wide that 'electrons entering from the -N zone 52 combine with holes before passing through the P zone and reaching the N zone 53.
  • Experience with high-back-voltage germanium indicates that distances at least as large as 10-2 centimeters are acceptable under this limita-tion, although smaller ones are advantageous.
  • a similar limitation is set by transit time effects. In the P zone there will be electric elds tending to cause a drift of electrons, also due to concentration gradients the electrons will diiuse.
  • the transit time and other capacitative eiiects may be reduced by increasing all acceptor and donator concentrations and reducing the scale vof the device.
  • the temperature rise will depend on A. Assuming that the thermal conductivity is independent of the electrical conductivity, a situation which will be approximately true for semiconductors of reasonably high resistance, the thermal conductance of the unit will vary as A. Since the currents and consequently the power vary as Arl, the temperature rise will vary as A-2. This variation must be considered in designing particular units and may require operating small scale units at less favorable voltages than large scale units in order to reduce temperature rises. Any thermal time eiects, as is Well known from theory, and derivable as above vary as A-Z and thus change their frequency with scale just as do the electrical eiTects.
  • a solid conductive device comprising a body of semiconductive material containing significant impurities and including a plurality of zones of alternately opposite conductivity types and conductive means for making contact respectively to each zone, the concentrations of signicant impurities in the portions of the body adjacent said contacts being relatively high to reduce the contact resistance.
  • a circuit element comprising a semiconductive body containing significant impurities and to several zones of which metallic contact is made, means for reducing the contact resistance between the semiconductor and the metallic contact that comprises a relatively high concentration of the signicant impurities that characterize the semiconductor as to conductivity type, adjacent the metallic contact.
  • a solid conductive device comprising in succession a metallic layer, a semiconductive layer of one conductivity type, a semiconductive layer of the opposite conductivity type, a grid of metallic material in said second semiconductive layer, a layer of said opposite conductivity type on said grid, a layer of said one conductivity type and a metallic layer, the portion of each semiconductive layer in contact with a metallic layer or grid containing a relatively high proportion of the significant impurity characteristic of its conductivity type.
  • a signal translating device comprising a semiconductive body having two outer zones of one conductivity type separated by an intermediate zone of the opposite conductivity type, a base connection to said intermediate zone, an input connection to one of said outer zones, and an output connection to the other of said outer zones and including means deiining a barrier with said other outer zone.
  • a signal translating device comprising a body of semiconductive material having two zones of one conductivity type, a third zone of the opposite conductivity type intermediate said two zones and a region of said opposite conductivity type contiguous with one of said two zones, and individual electrical connections to the other of said two zones, said region and said third zone.
  • a signal translating device comprising a body of semiconductive material having two contiguous zones of Opposite conductivity types and forming a barrier, a base connection to one of said zones, means including said base connection for injecting carriers into said one zone, said other zone having therein a region of conductivity type opposite that of said other zone,

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
US91593A 1948-06-26 1949-05-05 Circuit element utilizing semiconductive materials Expired - Lifetime US2623102A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL84061D NL84061C (cs) 1948-06-26
BE489418D BE489418A (cs) 1948-06-26
US91594A US2681993A (en) 1948-06-26 1949-05-05 Circuit element utilizing semiconductive materials
DEP41700A DE814487C (de) 1948-06-26 1949-05-05 Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie
US91593A US2623102A (en) 1948-06-26 1949-05-05 Circuit element utilizing semiconductive materials
FR986263D FR986263A (fr) 1948-06-26 1949-05-17 éléments de montages électriques utilisant des matières semi-conductrices
GB15512/49A GB700231A (en) 1948-06-26 1949-06-10 Improvements in electrical semiconductive devices and systems utilizing them
CH282854D CH282854A (de) 1948-06-26 1949-06-27 Elektrische Vorrichtung zur Steuerung elektrischer Energie mittels eines Halbleiterelementes.

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US35423A US2569347A (en) 1948-06-26 1948-06-26 Circuit element utilizing semiconductive material
US91594A US2681993A (en) 1948-06-26 1949-05-05 Circuit element utilizing semiconductive materials
US91593A US2623102A (en) 1948-06-26 1949-05-05 Circuit element utilizing semiconductive materials

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US2950425A (en) * 1950-09-14 1960-08-23 Bell Telephone Labor Inc Semiconductor signal translating devices
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US2811682A (en) * 1954-03-05 1957-10-29 Bell Telephone Labor Inc Silicon power rectifier
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US2843511A (en) * 1954-04-01 1958-07-15 Rca Corp Semi-conductor devices
US2870421A (en) * 1954-05-03 1959-01-20 Rca Corp Transistor reactance circuit
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes
US2845372A (en) * 1954-05-10 1958-07-29 Texas Instruments Inc Grown junction type transistors and method of making same
US2953738A (en) * 1954-06-02 1960-09-20 Westinghouse Electric Corp Rectifier device
US2829075A (en) * 1954-09-09 1958-04-01 Rca Corp Field controlled semiconductor devices and methods of making them
US2948836A (en) * 1955-03-30 1960-08-09 Raytheon Co Electrode connections to semiconductive bodies
US2856681A (en) * 1955-08-08 1958-10-21 Texas Instruments Inc Method of fixing leads to silicon and article resulting therefrom
US2843515A (en) * 1955-08-30 1958-07-15 Raytheon Mfg Co Semiconductive devices
US2862840A (en) * 1956-09-26 1958-12-02 Gen Electric Semiconductor devices
US2853602A (en) * 1956-09-27 1958-09-23 Hazeltine Research Inc Frequency-converter system having mixer and local oscillator gain controlled in opposite sense
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US3211970A (en) * 1957-05-06 1965-10-12 Rca Corp Semiconductor devices
US3057762A (en) * 1958-03-12 1962-10-09 Francois F Gans Heterojunction transistor manufacturing process
US2959504A (en) * 1958-05-26 1960-11-08 Western Electric Co Semiconductive current limiters
US2989713A (en) * 1959-05-11 1961-06-20 Bell Telephone Labor Inc Semiconductor resistance element
US3311799A (en) * 1959-07-31 1967-03-28 Westinghouse Brake & Signal Semiconductor barrier layer switch with symmetrical characteristics on either polarity
US3309586A (en) * 1960-11-11 1967-03-14 Itt Tunnel-effect semiconductor system with capacitative gate across edge of pn-junction
US3243669A (en) * 1962-06-11 1966-03-29 Fairchild Camera Instr Co Surface-potential controlled semiconductor device
US3268374A (en) * 1963-04-24 1966-08-23 Texas Instruments Inc Method of producing a field-effect transistor
US3298082A (en) * 1963-05-14 1967-01-17 Hitachi Ltd Method of making semiconductors and diffusion thereof
US3274462A (en) * 1963-11-13 1966-09-20 Jr Keats A Pullen Structural configuration for fieldeffect and junction transistors
US3914780A (en) * 1972-03-27 1975-10-21 Bbc Brown Boveri & Cie Continuously controllable semi-conductor power component
US4241167A (en) * 1979-05-25 1980-12-23 The United States Of America As Represented By The Secretary Of The Navy Electrolytic blocking contact to InP

Also Published As

Publication number Publication date
FR986263A (fr) 1951-07-30
CH282854A (de) 1952-05-15
US2681993A (en) 1954-06-22
BE489418A (cs)
DE814487C (de) 1951-09-24
NL84061C (cs)
GB700231A (en) 1953-11-25

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