US20140361327A1 - Light emitting diode and method of manufacturing the same - Google Patents

Light emitting diode and method of manufacturing the same Download PDF

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Publication number
US20140361327A1
US20140361327A1 US14/345,382 US201214345382A US2014361327A1 US 20140361327 A1 US20140361327 A1 US 20140361327A1 US 201214345382 A US201214345382 A US 201214345382A US 2014361327 A1 US2014361327 A1 US 2014361327A1
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United States
Prior art keywords
layer
reflective
substrate
light emitting
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US14/345,382
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English (en)
Inventor
Jong Hyeon Chae
Jong Min JANG
Won Young Roh
Daewoong Suh
Dae Sung Cho
Joon Sup Lee
Kyu Ho Lee
Chi Hyun IN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=47883888&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=US20140361327(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from KR1020120015758A external-priority patent/KR20130094483A/ko
Priority claimed from KR1020120052722A external-priority patent/KR20130128747A/ko
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Assigned to SEOUL VIOSYS CO., LTD. reassignment SEOUL VIOSYS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAE, JONG HYEON, CHO, DAE SUNG, IN, CHI HYUN, JANG, JONG MIN, LEE, Joon Sup, LEE, KYU HO, ROH, WON YOUNG, SUH, DAEWOONG
Publication of US20140361327A1 publication Critical patent/US20140361327A1/en
Priority to US14/671,491 priority Critical patent/US9634193B2/en
Priority to US14/920,790 priority patent/US10297720B2/en
Priority to US15/132,887 priority patent/US10319884B2/en
Priority to US15/226,304 priority patent/US10439105B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
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    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
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    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
US14/345,382 2011-09-15 2012-09-14 Light emitting diode and method of manufacturing the same Abandoned US20140361327A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/671,491 US9634193B2 (en) 2011-09-16 2015-03-27 Light emitting diode and method of manufacturing the same
US14/920,790 US10297720B2 (en) 2011-09-15 2015-10-22 Light emitting diode and method of manufacturing the same
US15/132,887 US10319884B2 (en) 2011-09-16 2016-04-19 Light emitting diode
US15/226,304 US10439105B2 (en) 2011-09-16 2016-08-02 Light emitting diode and light emitting diode package

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
KR20110093396 2011-09-16
KR10-2011-0093396 2011-09-16
KR1020120015758A KR20130094483A (ko) 2012-02-16 2012-02-16 발광 다이오드 칩 및 그의 제조 방법
KR10-2012-0015758 2012-02-16
KR1020120052722A KR20130128747A (ko) 2012-05-17 2012-05-17 응력 완화층을 가지는 발광 다이오드 및 그 형성방법
KR10-2012-0052722 2012-05-17
PCT/KR2012/007358 WO2013039344A2 (ko) 2011-09-16 2012-09-14 발광 다이오드 및 그것을 제조하는 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/007358 A-371-Of-International WO2013039344A2 (ko) 2011-09-15 2012-09-14 발광 다이오드 및 그것을 제조하는 방법

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US14/671,491 Continuation US9634193B2 (en) 2011-09-16 2015-03-27 Light emitting diode and method of manufacturing the same
US14/920,790 Continuation US10297720B2 (en) 2011-09-15 2015-10-22 Light emitting diode and method of manufacturing the same

Publications (1)

Publication Number Publication Date
US20140361327A1 true US20140361327A1 (en) 2014-12-11

Family

ID=47883888

Family Applications (6)

Application Number Title Priority Date Filing Date
US14/345,382 Abandoned US20140361327A1 (en) 2011-09-15 2012-09-14 Light emitting diode and method of manufacturing the same
US14/671,491 Active US9634193B2 (en) 2011-09-16 2015-03-27 Light emitting diode and method of manufacturing the same
US14/920,790 Active US10297720B2 (en) 2011-09-15 2015-10-22 Light emitting diode and method of manufacturing the same
US15/132,887 Active 2033-01-22 US10319884B2 (en) 2011-09-16 2016-04-19 Light emitting diode
US15/226,304 Active US10439105B2 (en) 2011-09-16 2016-08-02 Light emitting diode and light emitting diode package
US16/571,604 Active US10756237B2 (en) 2011-09-16 2019-09-16 Light emitting diode and light emitting diode package

Family Applications After (5)

Application Number Title Priority Date Filing Date
US14/671,491 Active US9634193B2 (en) 2011-09-16 2015-03-27 Light emitting diode and method of manufacturing the same
US14/920,790 Active US10297720B2 (en) 2011-09-15 2015-10-22 Light emitting diode and method of manufacturing the same
US15/132,887 Active 2033-01-22 US10319884B2 (en) 2011-09-16 2016-04-19 Light emitting diode
US15/226,304 Active US10439105B2 (en) 2011-09-16 2016-08-02 Light emitting diode and light emitting diode package
US16/571,604 Active US10756237B2 (en) 2011-09-16 2019-09-16 Light emitting diode and light emitting diode package

Country Status (6)

Country Link
US (6) US20140361327A1 (zh)
EP (7) EP2757598B1 (zh)
JP (3) JP5869678B2 (zh)
CN (5) CN106098889B (zh)
DE (1) DE202012013620U1 (zh)
WO (1) WO2013039344A2 (zh)

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US20150069430A1 (en) * 2013-09-12 2015-03-12 Cree, Inc. Phosphor-converted light emitting device
CN104934514A (zh) * 2015-07-06 2015-09-23 天津宝坻紫荆科技有限公司 一种复合绝缘层及制备方法
US20150349208A1 (en) * 2014-05-30 2015-12-03 Electronics And Telecommunications Research Institute Light emitting device and method for fabricating the same
US20150364653A1 (en) * 2014-06-13 2015-12-17 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
US20150380620A1 (en) * 2013-07-29 2015-12-31 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and led module having the same
US20160181476A1 (en) * 2014-12-17 2016-06-23 Apple Inc. Micro led with dielectric side mirror
US20160190400A1 (en) * 2013-05-13 2016-06-30 Seoul Semiconductor Co., Ltd. Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same
US20160197239A1 (en) * 2015-01-05 2016-07-07 Lextar Electronics Corporation Flip-Chip Light Emitting Diode Chip
US20160343914A1 (en) * 2013-11-12 2016-11-24 Semicon Light Co., Ltd. Semiconductor light emitting device
US20160380017A1 (en) * 2015-06-24 2016-12-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method of manufacturing a plurality of island-shaped dipoles having self-aligned electrodes
US20170018684A1 (en) * 2012-12-07 2017-01-19 Epistar Corporation Light-emitting element
US20170062351A1 (en) * 2014-02-18 2017-03-02 Osram Opto Semiconductors Gmbh Method for producing semiconductor components and semiconductor component
US9847457B2 (en) 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
US9859466B2 (en) * 2013-05-01 2018-01-02 Seoul Viosys Co., Ltd. Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode
US20180130926A1 (en) * 2015-02-17 2018-05-10 Genesis Photonics Inc. Light emitting diode
US20180198023A1 (en) * 2017-01-06 2018-07-12 Seoul Viosys Co., Ltd. Ultraviolet light emitting device having current blocking layer
US10297722B2 (en) 2015-01-30 2019-05-21 Apple Inc. Micro-light emitting diode with metal side mirror
DE102018101393A1 (de) * 2018-01-23 2019-07-25 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
CN110649131A (zh) * 2018-06-27 2020-01-03 首尔伟傲世有限公司 倒装芯片型发光二极管芯片及包括其的发光装置
USD872701S1 (en) 2017-12-12 2020-01-14 Genesis Photonics Inc. LED chip
US10580934B2 (en) * 2016-08-18 2020-03-03 Genesis Photonics Inc. Micro light emitting diode and manufacturing method thereof
US10734551B2 (en) 2015-02-17 2020-08-04 Genesis Photonics Inc. Light emitting diode
US10892390B2 (en) 2016-02-05 2021-01-12 Lg Innotek Co., Ltd. Light-emitting element and light-emitting element package including the same
US10932366B2 (en) * 2013-02-01 2021-02-23 Apple Inc. Low profile packaging and assembly of a power conversion system in modular form
US11018285B2 (en) * 2017-03-23 2021-05-25 Seoul Semiconductor Co., Ltd. Display device and manufacturing method thereof
US20210257528A1 (en) * 2016-05-03 2021-08-19 Seoul Viosys Co., Ltd. Light emitting diode
US11107953B2 (en) * 2017-05-22 2021-08-31 Osram Oled Gmbh Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
TWI742175B (zh) * 2016-10-07 2021-10-11 新世紀光電股份有限公司 發光二極體
WO2021236732A1 (en) * 2020-05-19 2021-11-25 Raxium, Inc. Quantum well-based led structure enhanced with sidewall hole injection
CN113809210A (zh) * 2021-09-14 2021-12-17 泉州三安半导体科技有限公司 一种发光二极管芯片、发光装置、显示装置
CN113948623A (zh) * 2016-01-13 2022-01-18 首尔伟傲世有限公司 发光元件
CN114038878A (zh) * 2021-08-17 2022-02-11 重庆康佳光电技术研究院有限公司 发光组件、显示屏及发光组件的制作方法
CN114188454A (zh) * 2021-12-03 2022-03-15 厦门市三安光电科技有限公司 紫外发光二极管及发光装置
CN115579441A (zh) * 2022-12-09 2023-01-06 华灿光电(苏州）有限公司 改善光效的发光二极管及其制备方法
US11621380B2 (en) 2018-04-26 2023-04-04 Xiamen Changelight Co., Ltd. Flip-chip of light emitting diode and manufacturing method and illuminating method thereof
WO2023136991A1 (en) * 2022-01-13 2023-07-20 Nanosys, Inc. Light emitting diodes and method of making thereof by selectively growing active layers from trench separated areas
US11817046B2 (en) 2019-02-25 2023-11-14 Samsung Display Co., Ltd. Display device and method of fabricating the same

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JP6248604B2 (ja) * 2013-12-18 2017-12-20 日亜化学工業株式会社 半導体発光素子及びその電極形成方法
JP6299336B2 (ja) * 2014-03-28 2018-03-28 日亜化学工業株式会社 発光素子及びそれを用いた発光装置
US9548419B2 (en) * 2014-05-20 2017-01-17 Southern Taiwan University Of Science And Technology Light emitting diode chip having multi microstructure substrate surface
WO2015181671A1 (en) * 2014-05-30 2015-12-03 Koninklijke Philips N.V. Light-emitting device with patterned substrate
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