US20120034451A1 - Substrate for flexible display and method of manufacturing the substrate - Google Patents

Substrate for flexible display and method of manufacturing the substrate Download PDF

Info

Publication number
US20120034451A1
US20120034451A1 US13/087,300 US201113087300A US2012034451A1 US 20120034451 A1 US20120034451 A1 US 20120034451A1 US 201113087300 A US201113087300 A US 201113087300A US 2012034451 A1 US2012034451 A1 US 2012034451A1
Authority
US
United States
Prior art keywords
layer
silicon nitride
silicon oxide
nitride layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/087,300
Other languages
English (en)
Inventor
Sang-Joon SEO
Hoon-Kee Min
Dong-un Jin
Sung-Guk An
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Assigned to SAMSUNG MOBILE DISPLAY CO., LTD. reassignment SAMSUNG MOBILE DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AN, SUNG-GUK, JIN, DONG-UN, MIN, HOON-KEE, SEO, SANG-JOON
Publication of US20120034451A1 publication Critical patent/US20120034451A1/en
Assigned to SAMSUNG DISPLAY CO., LTD. reassignment SAMSUNG DISPLAY CO., LTD. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG MOBILE DISPLAY CO., LTD.
Priority to US13/975,054 priority Critical patent/US20130341629A1/en
Priority to US17/329,306 priority patent/US11978803B2/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13334—Plasma addressed liquid crystal cells [PALC]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/501—Blocking layers, e.g. against migration of ions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
US13/087,300 2010-08-03 2011-04-14 Substrate for flexible display and method of manufacturing the substrate Abandoned US20120034451A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/975,054 US20130341629A1 (en) 2010-08-03 2013-08-23 Flexible display and method of manufacturing the same
US17/329,306 US11978803B2 (en) 2010-08-03 2021-05-25 Flexible display and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0074979 2010-08-03
KR1020100074979A KR101793047B1 (ko) 2010-08-03 2010-08-03 플렉서블 디스플레이 및 이의 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/975,054 Continuation US20130341629A1 (en) 2010-08-03 2013-08-23 Flexible display and method of manufacturing the same

Publications (1)

Publication Number Publication Date
US20120034451A1 true US20120034451A1 (en) 2012-02-09

Family

ID=45556372

Family Applications (3)

Application Number Title Priority Date Filing Date
US13/087,300 Abandoned US20120034451A1 (en) 2010-08-03 2011-04-14 Substrate for flexible display and method of manufacturing the substrate
US13/975,054 Abandoned US20130341629A1 (en) 2010-08-03 2013-08-23 Flexible display and method of manufacturing the same
US17/329,306 Active 2031-08-18 US11978803B2 (en) 2010-08-03 2021-05-25 Flexible display and method of manufacturing the same

Family Applications After (2)

Application Number Title Priority Date Filing Date
US13/975,054 Abandoned US20130341629A1 (en) 2010-08-03 2013-08-23 Flexible display and method of manufacturing the same
US17/329,306 Active 2031-08-18 US11978803B2 (en) 2010-08-03 2021-05-25 Flexible display and method of manufacturing the same

Country Status (2)

Country Link
US (3) US20120034451A1 (ko)
KR (1) KR101793047B1 (ko)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130175534A1 (en) * 2012-01-10 2013-07-11 Samsung Mobile Display Co., Ltd. Semiconductor device and method of manufacturing the same
WO2013134661A1 (en) * 2012-03-09 2013-09-12 Air Products And Chemicals, Inc. Barrier materials for display devices
US20140030494A1 (en) * 2012-07-25 2014-01-30 E Ink Holdings Inc. Gas barrier substrate
US20140183498A1 (en) * 2012-12-31 2014-07-03 Saint-Gobain Performance Plastics Corporation Thin Film Silicon Nitride Barrier Layers On Flexible Substrate
US20140209877A1 (en) * 2013-01-30 2014-07-31 Samsung Display Co., Ltd. TFT Substrate Including Barrier Layer, Organic Light-Emitting Display Device Including the TFT Substrate, and Method of Manufacturinq the TFT Substrate
US20140232962A1 (en) * 2013-02-20 2014-08-21 Japan Display Inc. Display device
US20140322527A1 (en) * 2013-04-30 2014-10-30 Research & Business Foundation Sungkyunkwan University Multilayer encapsulation thin-film
US20140339527A1 (en) * 2013-05-16 2014-11-20 Samsung Display Co., Ltd. Organic light-emitting diode display, an electronic device including the same, and method of manufacturing the organic light-emitting diode display
CN104175663A (zh) * 2014-05-29 2014-12-03 中国乐凯集团有限公司 一种防紫外线辐射透明高阻隔薄膜及其应用
CN104576654A (zh) * 2013-10-17 2015-04-29 株式会社日本显示器 显示装置
CN104616596A (zh) * 2013-11-04 2015-05-13 乐金显示有限公司 制造柔性显示设备的方法
US20150221891A1 (en) * 2014-02-06 2015-08-06 Emagin Corporation High efficacy seal for organic light emitting diode displays
CN104875462A (zh) * 2014-02-28 2015-09-02 新日铁住金化学株式会社 显示装置的制造方法、树脂溶液及剥离装置
EP2955747A1 (en) * 2014-06-10 2015-12-16 SPTS Technologies Limited Substrate
JP2016149537A (ja) * 2015-01-29 2016-08-18 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ ３ｄデバイスを製造するための方法及び前駆体
US20160250827A1 (en) * 2015-02-26 2016-09-01 Samsung Display Co., Ltd. Display device and method of manufacturing a display device
US9437831B2 (en) 2013-12-02 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US9893313B2 (en) 2015-06-19 2018-02-13 Samsung Display Co., Ltd. Organic luminescence display device and method of manufacturing the same
US10031605B2 (en) 2015-04-13 2018-07-24 Microsoft Technology Licensing, Llc Display integrated pressure sensor
CN108847134A (zh) * 2018-06-13 2018-11-20 云谷（固安）科技有限公司 一种可拉伸显示屏装置及其制造方法
US10185190B2 (en) 2016-05-11 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Display device, module, and electronic device
WO2019184252A1 (zh) * 2018-03-29 2019-10-03 深圳市华星光电半导体显示技术有限公司 柔性tft背板的制作方法及柔性tft背板
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
US20200082754A1 (en) * 2018-09-10 2020-03-12 Ordos Yuansheng Optoelectronics Co., Ltd. Display panel and method for preparing the same, display device
CN110942715A (zh) * 2018-09-24 2020-03-31 群创光电股份有限公司 可挠曲电子装置
US10629831B2 (en) 2016-07-29 2020-04-21 Semiconductor Energy Laboratory Co., Ltd. Separation method, display device, display module, and electronic device
US10680201B2 (en) * 2014-06-13 2020-06-09 Samsung Display Co., Ltd. Display apparatus
US10861733B2 (en) 2016-08-09 2020-12-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US11329250B2 (en) 2019-07-31 2022-05-10 Samsung Display Co., Ltd. Display device
WO2023159681A1 (zh) * 2022-02-25 2023-08-31 武汉华星光电半导体显示技术有限公司 薄膜晶体管、oled显示面板

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101793047B1 (ko) 2010-08-03 2017-11-03 삼성디스플레이 주식회사 플렉서블 디스플레이 및 이의 제조 방법
KR20130136063A (ko) 2012-06-04 2013-12-12 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
KR101977708B1 (ko) 2012-09-04 2019-08-29 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR101947166B1 (ko) 2012-11-19 2019-02-13 삼성디스플레이 주식회사 기판 및 상기 기판을 포함하는 표시장치
KR20140074710A (ko) 2012-12-10 2014-06-18 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR102111560B1 (ko) 2013-07-12 2020-05-18 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
KR102098573B1 (ko) 2013-07-19 2020-05-27 삼성디스플레이 주식회사 표시패널 및 그 제조방법
KR101457900B1 (ko) * 2014-03-26 2014-11-04 실리콘밸리(주) 실리콘 적층을 이용한 디스플레이용 필름 및 그 제조방법
KR102352290B1 (ko) * 2014-09-03 2022-01-18 삼성디스플레이 주식회사 플렉서블 표시패널
CN109411417B (zh) * 2017-08-18 2020-09-11 财团法人工业技术研究院 电子组件封装体以及显示面板
KR20210126202A (ko) * 2020-04-09 2021-10-20 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN116180075B (zh) * 2023-02-17 2024-02-23 西南交通大学 一种低应力强结合高温绝缘涂层的制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0868990A (ja) * 1994-08-29 1996-03-12 Mitsui Toatsu Chem Inc ガスバリヤー性低透湿性絶縁性透明電極用基板およびその用途
US20050082641A1 (en) * 1992-04-08 2005-04-21 Elm Technology Corporation Flexible and elastic dielectric integrated circuit
US20060158111A1 (en) * 2005-01-17 2006-07-20 Seiko Epson Corporation Light-emitting device, method for manufacturing light-emitting device, and electronic apparatus
WO2009095005A1 (de) * 2008-01-30 2009-08-06 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines elektronischen bauelements und elektronisches bauelement
US20100163874A1 (en) * 2008-12-24 2010-07-01 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US20100193949A1 (en) * 2009-02-03 2010-08-05 International Business Machines Corporation Novel structure of ubm and solder bumps and methods of fabrication
US20120228616A1 (en) * 2009-11-20 2012-09-13 E.I. Du Pont De Nemours And Company Thin film transistor compositions, and methods relating thereto

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614455C3 (de) * 1967-03-16 1979-07-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers
JPH0613593B2 (ja) 1985-03-27 1994-02-23 三井東圧化学株式会社 改良されたプレポリマー組成物を主成分とするポリウレタンエラストマーの製造方法
JPH06175116A (ja) 1992-12-04 1994-06-24 Ricoh Co Ltd ＳｉＯｘ膜形成プラスチック基板および該基板を使用したＭＩＭ素子
KR100225100B1 (ko) * 1996-10-02 1999-10-15 구자홍 박막트랜지스터
US6531193B2 (en) * 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
JPH11102867A (ja) 1997-07-16 1999-04-13 Sony Corp 半導体薄膜の形成方法およびプラスチック基板
JP3867393B2 (ja) * 1998-03-20 2007-01-10 株式会社デンソー マイクロヒータおよびその製造方法ならびにエアフローセンサ
US6460025B1 (en) 1999-07-27 2002-10-01 International Business Machines Corporation Intelligent exploration through multiple hierarchies using entity relevance
KR100488939B1 (ko) 2000-12-29 2005-05-11 비오이 하이디스 테크놀로지 주식회사 에프에프에스 모드 박막액정트랜지스터 액정표시소자제조방법
US6771328B2 (en) * 2001-07-25 2004-08-03 Lg. Philips Lcd Co., Ltd. Active matrix organic electroluminescent device simplifying a fabricating process and a fabricating method thereof
JP3971639B2 (ja) 2002-04-18 2007-09-05 大日本印刷株式会社 バリアフィルムとこれを用いた積層材、包装用容器、画像表示媒体およびバリアフィルムの製造方法
US20050037240A1 (en) * 2003-03-31 2005-02-17 Daisaku Haoto Protective coat and method for manufacturing thereof
KR100637147B1 (ko) * 2004-02-17 2006-10-23 삼성에스디아이 주식회사 박막의 밀봉부를 갖는 유기 전계 발광 표시장치, 그제조방법 및 막 형성장치
KR101090258B1 (ko) * 2005-01-03 2011-12-06 삼성전자주식회사 플라스틱 기판을 이용한 박막 트랜지스터 표시판의 제조방법
JP4946860B2 (ja) 2005-02-17 2012-06-06 コニカミノルタホールディングス株式会社 ガスバリアフィルム及びその製造方法、並びに該ガスバリアフィルムを用いた、有機ｅｌ素子用樹脂基材、有機ｅｌ素子
JP2006247894A (ja) 2005-03-08 2006-09-21 Fuji Photo Film Co Ltd ガスバリアフィルム、並びに、これを用いた有機エレクトロルミネッセンス素子および画像表示素子
KR100732827B1 (ko) * 2005-11-30 2007-06-27 삼성에스디아이 주식회사 박막 트랜지스터 및 그 제조방법
JP4730162B2 (ja) * 2006-03-24 2011-07-20 株式会社日立製作所 超音波送受信デバイス，超音波探触子およびその製造方法
KR100922951B1 (ko) 2007-11-08 2009-10-22 경북대학교 산학협력단 플라스틱 필름에 투습 방지성이 향상된 보호막의 형성 방법및 이를 이용한 플렉시블 유기 전계 발광 소자
KR20090054538A (ko) 2007-11-27 2009-06-01 주식회사 동부하이텍 반도체 장치의 소자 분리막 및 이의 형성 방법
US8465795B2 (en) 2008-05-20 2013-06-18 Palo Alto Research Center Incorporated Annealing a buffer layer for fabricating electronic devices on compliant substrates
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2010181777A (ja) * 2009-02-09 2010-08-19 Hitachi Displays Ltd 表示装置
KR101793047B1 (ko) 2010-08-03 2017-11-03 삼성디스플레이 주식회사 플렉서블 디스플레이 및 이의 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050082641A1 (en) * 1992-04-08 2005-04-21 Elm Technology Corporation Flexible and elastic dielectric integrated circuit
JPH0868990A (ja) * 1994-08-29 1996-03-12 Mitsui Toatsu Chem Inc ガスバリヤー性低透湿性絶縁性透明電極用基板およびその用途
US20060158111A1 (en) * 2005-01-17 2006-07-20 Seiko Epson Corporation Light-emitting device, method for manufacturing light-emitting device, and electronic apparatus
WO2009095005A1 (de) * 2008-01-30 2009-08-06 Osram Opto Semiconductors Gmbh Verfahren zur herstellung eines elektronischen bauelements und elektronisches bauelement
US20110121354A1 (en) * 2008-01-30 2011-05-26 Osram Optp Semiconductors Gmbh Method for Producing an Electronic Component and Electronic Component
US20100163874A1 (en) * 2008-12-24 2010-07-01 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US20100193949A1 (en) * 2009-02-03 2010-08-05 International Business Machines Corporation Novel structure of ubm and solder bumps and methods of fabrication
US20120228616A1 (en) * 2009-11-20 2012-09-13 E.I. Du Pont De Nemours And Company Thin film transistor compositions, and methods relating thereto

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Recent Situation of Industrial Implementation of Cat-CVD Technology in Japan, Hideki Matsumura et al, Thin Solid Films 516 (2008) 537-540, (2008) *
DERWENT2009h16278full(2009) *
English Machine Translation of JP08068990(1996) *

Cited By (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130081927A (ko) * 2012-01-10 2013-07-18 삼성디스플레이 주식회사 반도체 장치 및 이의 제조 방법
US20130175534A1 (en) * 2012-01-10 2013-07-11 Samsung Mobile Display Co., Ltd. Semiconductor device and method of manufacturing the same
KR101903445B1 (ko) 2012-01-10 2018-10-05 삼성디스플레이 주식회사 반도체 장치 및 이의 제조 방법
US8937313B2 (en) * 2012-01-10 2015-01-20 Samsung Display Co., Ltd. Semiconductor device and method of manufacturing the same
CN104271797A (zh) * 2012-03-09 2015-01-07 气体产品与化学公司 显示器件的阻隔材料
WO2013134661A1 (en) * 2012-03-09 2013-09-12 Air Products And Chemicals, Inc. Barrier materials for display devices
US10319862B2 (en) 2012-03-09 2019-06-11 Versum Materials Us, Llc Barrier materials for display devices
TWI496932B (zh) * 2012-03-09 2015-08-21 Air Prod & Chem 用於顯示裝置的阻絕物材料
US20140030494A1 (en) * 2012-07-25 2014-01-30 E Ink Holdings Inc. Gas barrier substrate
CN103579256A (zh) * 2012-07-25 2014-02-12 元太科技工业股份有限公司 阻气基板
US9399336B2 (en) * 2012-07-25 2016-07-26 E Ink Holdings Inc. Gas barrier substrate
JP2016508898A (ja) * 2012-12-31 2016-03-24 サン−ゴバン パフォーマンス プラスティックス コーポレイション フレキシブル基板の薄膜窒化ケイ素バリア層
CN104995716A (zh) * 2012-12-31 2015-10-21 美国圣戈班性能塑料公司 柔性基材上的薄膜氮化硅阻挡层
US20140183498A1 (en) * 2012-12-31 2014-07-03 Saint-Gobain Performance Plastics Corporation Thin Film Silicon Nitride Barrier Layers On Flexible Substrate
US9306071B2 (en) * 2013-01-30 2016-04-05 Samsung Display Co., Ltd. Organic light-emitting display device including a flexible TFT substrate and stacked barrier layers
US20140209877A1 (en) * 2013-01-30 2014-07-31 Samsung Display Co., Ltd. TFT Substrate Including Barrier Layer, Organic Light-Emitting Display Device Including the TFT Substrate, and Method of Manufacturinq the TFT Substrate
US10976580B2 (en) * 2013-02-20 2021-04-13 Japan Display Inc. Display device
US10416485B2 (en) 2013-02-20 2019-09-17 Japan Display Inc. Display device
US20140232962A1 (en) * 2013-02-20 2014-08-21 Japan Display Inc. Display device
CN107611120A (zh) * 2013-02-20 2018-01-19 株式会社日本显示器 显示装置及其制造方法
US11409145B2 (en) 2013-02-20 2022-08-09 Japan Display Inc. Display device
US11656488B2 (en) 2013-02-20 2023-05-23 Japan Display Inc. Display device
US20140322527A1 (en) * 2013-04-30 2014-10-30 Research & Business Foundation Sungkyunkwan University Multilayer encapsulation thin-film
US20140339527A1 (en) * 2013-05-16 2014-11-20 Samsung Display Co., Ltd. Organic light-emitting diode display, an electronic device including the same, and method of manufacturing the organic light-emitting diode display
US9178178B2 (en) * 2013-05-16 2015-11-03 Samsung Display Co., Ltd. Organic light-emitting diode display having improved adhesion and damage resistance characteristics, an electronic device including the same, and method of manufacturing the organic light-emitting diode display
US10658400B2 (en) 2013-10-17 2020-05-19 Japan Display Inc. Method of manufacturing display device having a multilayered undercoating layer of silicon oxide and silicon nitride
CN104576654A (zh) * 2013-10-17 2015-04-29 株式会社日本显示器 显示装置
CN104616596A (zh) * 2013-11-04 2015-05-13 乐金显示有限公司 制造柔性显示设备的方法
US9437831B2 (en) 2013-12-02 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10879331B2 (en) 2013-12-02 2020-12-29 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US9559316B2 (en) 2013-12-02 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US9559317B2 (en) 2013-12-02 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10763322B2 (en) 2013-12-02 2020-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US11672148B2 (en) 2013-12-02 2023-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US11004925B2 (en) 2013-12-02 2021-05-11 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10355067B2 (en) 2013-12-02 2019-07-16 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10312315B2 (en) 2013-12-02 2019-06-04 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10854697B2 (en) 2013-12-02 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10872947B2 (en) 2013-12-02 2020-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US10147906B2 (en) * 2014-02-06 2018-12-04 Emagin Corporation High efficacy seal for organic light emitting diode displays
US20150221891A1 (en) * 2014-02-06 2015-08-06 Emagin Corporation High efficacy seal for organic light emitting diode displays
CN104875462A (zh) * 2014-02-28 2015-09-02 新日铁住金化学株式会社 显示装置的制造方法、树脂溶液及剥离装置
CN104175663A (zh) * 2014-05-29 2014-12-03 中国乐凯集团有限公司 一种防紫外线辐射透明高阻隔薄膜及其应用
US9472610B2 (en) 2014-06-10 2016-10-18 Spts Technologies Limited Substrate
CN105280566A (zh) * 2014-06-10 2016-01-27 Spts科技有限公司 基板
EP2955747A1 (en) * 2014-06-10 2015-12-16 SPTS Technologies Limited Substrate
JP2016076688A (ja) * 2014-06-10 2016-05-12 エスピーティーエス テクノロジーズ リミティド 基板
US10680201B2 (en) * 2014-06-13 2020-06-09 Samsung Display Co., Ltd. Display apparatus
US11165042B2 (en) 2014-06-13 2021-11-02 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same
KR20180125928A (ko) * 2015-01-29 2018-11-26 버슘머트리얼즈 유에스, 엘엘씨 3ｄ 소자를 제작하기 위한 장치 및 전구체
JP2016149537A (ja) * 2015-01-29 2016-08-18 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ ３ｄデバイスを製造するための方法及び前駆体
US10354860B2 (en) 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
KR102243988B1 (ko) 2015-01-29 2021-04-22 버슘머트리얼즈 유에스, 엘엘씨 3ｄ 소자를 제작하기 위한 장치 및 전구체
US20160250827A1 (en) * 2015-02-26 2016-09-01 Samsung Display Co., Ltd. Display device and method of manufacturing a display device
US10005263B2 (en) * 2015-02-26 2018-06-26 Samsung Display Co., Ltd. Display device and method of manufacturing a display device
US10031605B2 (en) 2015-04-13 2018-07-24 Microsoft Technology Licensing, Llc Display integrated pressure sensor
US10673015B2 (en) 2015-06-19 2020-06-02 Samsung Display Co., Ltd. Organic luminescence display device and method of manufacturing the same
US9893313B2 (en) 2015-06-19 2018-02-13 Samsung Display Co., Ltd. Organic luminescence display device and method of manufacturing the same
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
US11107846B2 (en) 2016-03-24 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
US10185190B2 (en) 2016-05-11 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Display device, module, and electronic device
US10930870B2 (en) 2016-07-29 2021-02-23 Semiconductor Energy Laboratory Co., Ltd. Separation method, display device, display module, and electronic device
US11616206B2 (en) 2016-07-29 2023-03-28 Semiconductor Energy Laboratory Co., Ltd. Separation method, display device, display module, and electronic device
US10629831B2 (en) 2016-07-29 2020-04-21 Semiconductor Energy Laboratory Co., Ltd. Separation method, display device, display module, and electronic device
US10861733B2 (en) 2016-08-09 2020-12-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2019184252A1 (zh) * 2018-03-29 2019-10-03 深圳市华星光电半导体显示技术有限公司 柔性tft背板的制作方法及柔性tft背板
CN108847134A (zh) * 2018-06-13 2018-11-20 云谷（固安）科技有限公司 一种可拉伸显示屏装置及其制造方法
US20200082754A1 (en) * 2018-09-10 2020-03-12 Ordos Yuansheng Optoelectronics Co., Ltd. Display panel and method for preparing the same, display device
US10803795B2 (en) * 2018-09-10 2020-10-13 Ordos Yuansheng Optoelectronics Co., Ltd. Display panel and method for preparing the same, display device
CN114187843A (zh) * 2018-09-24 2022-03-15 群创光电股份有限公司 可挠曲电子装置
CN114187844A (zh) * 2018-09-24 2022-03-15 群创光电股份有限公司 可挠曲电子装置
CN110942715A (zh) * 2018-09-24 2020-03-31 群创光电股份有限公司 可挠曲电子装置
US11329250B2 (en) 2019-07-31 2022-05-10 Samsung Display Co., Ltd. Display device
WO2023159681A1 (zh) * 2022-02-25 2023-08-31 武汉华星光电半导体显示技术有限公司 薄膜晶体管、oled显示面板

Also Published As

Publication number Publication date
US11978803B2 (en) 2024-05-07
US20130341629A1 (en) 2013-12-26
US20210288173A1 (en) 2021-09-16
KR20120012891A (ko) 2012-02-13
KR101793047B1 (ko) 2017-11-03

Similar Documents

Publication Publication Date Title
US11978803B2 (en) Flexible display and method of manufacturing the same
KR101623961B1 (ko) 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자
US11903241B2 (en) Barrier film, organic EL device, flexible substrate, and method for manufacturing barrier film
US20130330482A1 (en) Carbon-doped silicon nitride thin film and manufacturing method and device thereof
TWI605432B (zh) 用於軟性顯示器的基板及其製造方法
KR102057176B1 (ko) 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선
CN110970578A (zh) 一种显示面板及其制作方法、显示装置
US20170170309A1 (en) Thin film transistor, array substrate and display device having the same, and method thereof
US20240065075A1 (en) Package structure, display panel, and manufacturing method of display panel
KR102227484B1 (ko) 플렉서블 디스플레이 및 이의 제조 방법
KR102631535B1 (ko) 유기 발광 표시 장치
US9399336B2 (en) Gas barrier substrate
KR102148429B1 (ko) 플렉서블 디스플레이 및 이의 제조 방법
US8487413B2 (en) Passivation film for electronic device and method of manufacturing the same
US20040191969A1 (en) Method for fabricating thin film transistor liquid crystal display
US20240023421A1 (en) Display panel and manufacturing method thereof
KR101926069B1 (ko) 플렉서블 디스플레이 및 이의 제조 방법
US20110156041A1 (en) Polymer substrate and method of forming the same and display device including the polymer substrate and method of manufacturing the display device
TWI809637B (zh) 薄膜封裝結構、薄膜電晶體與顯示裝置
US10644167B2 (en) Thin film transistor and manufacturing method thereof
US11430816B2 (en) Method for preparing interlayer insulating layer and method for manufacturing thin film transistor, thin film transistor
US20220238851A1 (en) Display device and method of manufacturing the same

Legal Events

Date Code Title Description
AS Assignment

Owner name: SAMSUNG MOBILE DISPLAY CO., LTD., KOREA, REPUBLIC

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SEO, SANG-JOON;MIN, HOON-KEE;JIN, DONG-UN;AND OTHERS;REEL/FRAME:026130/0736

Effective date: 20110414

AS Assignment

Owner name: SAMSUNG DISPLAY CO., LTD., KOREA, REPUBLIC OF

Free format text: MERGER;ASSIGNOR:SAMSUNG MOBILE DISPLAY CO., LTD.;REEL/FRAME:028921/0334

Effective date: 20120702

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION