US20080150064A1 - Plastic electronic component package - Google Patents

Plastic electronic component package Download PDF

Info

Publication number
US20080150064A1
US20080150064A1 US12/001,792 US179207A US2008150064A1 US 20080150064 A1 US20080150064 A1 US 20080150064A1 US 179207 A US179207 A US 179207A US 2008150064 A1 US2008150064 A1 US 2008150064A1
Authority
US
United States
Prior art keywords
lid
leadframe
frame
plastic
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/001,792
Other languages
English (en)
Inventor
Michael A. Zimmerman
Keith Smith
Jacob Shverdin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IQLP LLC
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US12/001,792 priority Critical patent/US20080150064A1/en
Assigned to QUANTUM LEAP PACKAGING, INC reassignment QUANTUM LEAP PACKAGING, INC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHVERDIN, JACOB, SMITH, KEITH, ZIMMERMAN, MICHAEL A.
Publication of US20080150064A1 publication Critical patent/US20080150064A1/en
Priority to US12/220,543 priority patent/US20080305355A1/en
Assigned to INTERPLEXED ENGINEERED PRODUCTS, INC. reassignment INTERPLEXED ENGINEERED PRODUCTS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: QUANTUM LEAP PACKAGING, INC.
Assigned to INTERPLEX ENGINEERED PRODUCTS, INC. reassignment INTERPLEX ENGINEERED PRODUCTS, INC. CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE'S NAME PREVIOUSLY RECORDED ON REEL 022892 FRAME 0082. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Assignors: QUANTUM LEAP PACKAGING, INC.
Assigned to INTERPLEX ENGINEERED PRODUCTS, INC. reassignment INTERPLEX ENGINEERED PRODUCTS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: QUANTUM LEAP PACKAGING, INC.
Assigned to INTERPLEX QLP, INC. reassignment INTERPLEX QLP, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INTERPLEX ENGINEERED PRODUCTS, INC.
Priority to US12/950,528 priority patent/US8039945B2/en
Assigned to IQLP, LLC reassignment IQLP, LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INTERPLEX QLP, INC.
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12556—Organic component
    • Y10T428/12569—Synthetic resin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y10T428/12618—Plural oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Definitions

  • Image sensors such as those used in digital cameras and other optical or image sensing equipment are conventionally housed in a ceramic package.
  • the ceramic package includes a ceramic frame which is epoxy bonded to a glass lid or cover.
  • the ceramic package is expensive and not readily adapted to manufacture in strip form or other multiple unit form, as is widely employed in the semiconductor packaging industry.
  • the use of epoxy as a bonding agent presents several problems such as moisture penetration through the epoxy bond, outgassing of the epoxy which can contaminate the semiconductor device, and air leakage which limits the ability to hermetically seal the ceramic package.
  • a conventional ceramic sensor package is shown in sectional elevation view in FIG. 1 .
  • This package includes a two layer ceramic substrate composed of an outer ceramic substrate 10 and an inner ceramic substrate 12 , on the upper surface of which is disposed a CCD or CMOS image sensor 14 .
  • a ceramic frame 16 defines the cavity 18 in which the image sensor is located.
  • the ceramic frame is hermetically sealed to the peripheral surface of the substrate 10 and a boro-silicate glass lid or window 20 is sealed to the upper surface of frame 16 by a UV curable adhesive.
  • the contacts of the image sensor are wire bonded to contacts 22 provided on the inner surface of substrate 10 . These contacts 22 are electrically connected to outer contact pads 24 by conductive feedthroughs or vias provided in substrate 10 .
  • the feedthroughs 26 are typically plated with gold to enhance the electrical conduction between the inner and outer contact areas.
  • a UV curable adhesive is usually employed to bond the glass window to the ceramic package frame to prevent exposure of the semiconductor sensors to high temperatures which are needed to cure other types of epoxy adhesives but which can degrade or destroy the semiconductor sensors.
  • the requirement for UV curable adhesive materials limits the range of available epoxies which can be employed in the conventional ceramic package, since most epoxy adhesives are curable at elevated temperatures.
  • Hermeticity is a measure of an ability of the package to protect the semiconductor or other device housed in the package from an entrance of fluids and moisture. Moisture or corrosive gases on or near a semiconductor device can cause corrosion of the metallic traces on the semiconductor device, and can lead to failure.
  • Traditional hermetic packages are made from metal, ceramic, or vitreous materials. These materials have such low permeabilities that moisture and fluids typically are impeded by these materials, and cause a condensation on the semiconductor device or contamination by corrosive gasses.
  • fluids or moisture can penetrate the image sensor package though “leaks” at several interfaces.
  • the interfaces for a ceramic package include a metal/ceramic interface, along with epoxy/glass and epoxy/ceramic interfaces. Any small openings at these interfaces allow fluids or moisture to seep inside the image sensor package.
  • the image sensor package according to the present invention eliminates the need for ceramic components and employs a plastic material which preferably is a high temperature liquid crystal polymer (LCP) material.
  • LCP liquid crystal polymer
  • the package is useful not only for image sensors but also for other light sensing or light emitting semiconductor or other devices or components.
  • a package in accordance with the invention can also be used to contain non-optical devices or components.
  • the image sensor package comprises a plastic body or frame, preferably of LCP material, molded around a metal leadframe and defining a cavity in which the image sensor is to be disposed.
  • the leadframe has a central portion in the cavity on which the image sensor is mounted, and a plurality of leads which are connectable to contact areas of the sensor.
  • a lid assembly is provided having a transparent glass lid retained in a lid frame which is also made of plastic, preferably LCP material.
  • the lid frame is weldable or otherwise bondable to the plastic frame of the package to enclose the image sensor mounted in the cavity.
  • the leadframe is usually composed of copper or a copper alloy, or a ferrous alloy having a copper coating.
  • An interfacial layer is formed on the surfaces of the leadframe at least in those portions which are in contact with the plastic frame.
  • This interfacial layer serves to provide substantially improved adhesion between the leadframe and the plastic material and to achieve a hermetic bond between the metal and plastic materials.
  • the interfacial layer is composed of a cuprous oxide base layer formed on a surface of the leadframe, and a cupric oxide layer formed on the cuprous oxide layer.
  • the cupric oxide outer layer has an acicular structure which provides an interlocking mechanism for adhesion to the plastic material molded thereto in forming the package.
  • a hermetic seal and sealing technique is provided between a metal element and a plastic element which utilizes an interfacial or intermediate layer between the metal element and plastic element and which comprises a first oxide base layer for providing strong adhesion to the metal material and a second oxide layer formed on the first oxide base layer and having an acicular structure for strong adhesion to the plastic material.
  • FIG. 1 is a cutaway elevation view of a ceramic package of conventional construction
  • FIG. 2A shows an image sensor package made in accordance with the invention
  • FIG. 2B shows the bottom of the package of FIG. 2A ;
  • FIG. 3 shows a leadframe strip used in the package of the invention
  • FIG. 4A is a cutaway perspective view of the lid assembly
  • FIG. 4B is a perspective view of the lid assembly
  • FIG. 4C is a cutaway elevation view of the assembly of FIG. 4A ;
  • FIG. 5 is a cutaway elevation view of the ultrasonically welded image sensor package
  • FIG. 6 are photomicrographs showing the interfacial layer between the copper leadframe and package frame material
  • FIG. 7 is a diagrammatic elevation view of the interfacial layer
  • FIG. 8A is a flowchart illustrating the steps of package fabrication
  • FIG. 8B is a flowchart illustrating the steps of lid assembly fabrication
  • FIG. 9 is a flowchart of the steps typically employed by a manufacturer in attaching a device in the package.
  • FIG. 10 is a photomicrograph illustrating dye leaking through a conventional LCP package which is non-hermetic
  • FIG. 11 is a photograph of the top and bottom of a hermetic LCP package of the invention, after leakage testing.
  • FIG. 12 is a graph illustrating the permeability of packaging materials.
  • the package, materials and method of package fabrication are described in a preferred embodiment for an image sensor.
  • the invention is not to be limited to image sensor packages or packages for other optical devices, but is more broadly useful for housing other semiconductor, electrical and electronic devices, components or circuits.
  • the package configuration can be of various forms to suit particular packaging requirements.
  • the package configuration may vary in size and shape and can include electrical lead configurations of many different forms.
  • the invention is not to be limited to any particular package type or configuration. The invention will be described in the context of a package for a semiconductor image sensor chip such as used in digital cameras and other digital imaging systems and devices.
  • the image sensor package in accordance with the invention comprises a high temperature thermoplastic body or frame, preferably an LCP material, molded around a metal leadframe.
  • An image sensor chip is mounted in a cavity of the package on a central portion of the leadframe and the chip is wirebonded or otherwise connected to leads of the leadframe.
  • a lid assembly comprised of a glass lid retained in a high temperature thermoplastic frame, also preferably an LCP material, is attached to the package frame after the sensor chip has been mounted in the cavity of the package.
  • the frame of the lid assembly is ultrasonically welded to the plastic frame of the image sensor package to provide a hermetically sealed enclosure for the sensor.
  • the glass lid is chemically bonded to the plastic frame of the lid assembly, preferably by thermal bonding.
  • the glass lid can be insert molded to the lid assembly frame.
  • the glass is of optical quality and is transmissive in the optical spectrum of interest.
  • the glass is transmissive to the visible light spectrum.
  • the glass is transmissive to UV light.
  • FIG. 2A An image sensor package according to the invention is shown in pictorial view in FIG. 2A and bottom view in FIG. 2B .
  • the plastic frame or body 30 defines a cavity area in which the image sensor is mounted on the copper surface 32 provided by the leadframe. Copper leads 34 provided about the periphery of the cavity extend through the molded body to positions 36 on the bottom of the leadframe as shown in FIG. 2B .
  • a leadframe is fabricated of copper or copper alloy using conventional methods (e.g., etching or plating). For reasons of cost and manufacturing ease, the leadframe is usually fabricated in a reel. The leadframe is exposed to a treatment, described below, to improve adhesion for molding with the plastic material. This treatment can be performed in either reel-reel or strip format.
  • FIG. 3 A portion of a leadframe strip is shown in FIG. 3 in which six leadframe units 40 are disposed across the width of the strip 42 .
  • six package bodies are molded simultaneously across the width of the leadframe strip.
  • the leadframe strip is then advanced, and an additional six bodies are molded to the array of leadframes disposed across the width of the strip.
  • the leadframe strip is populated with package bodies and the strip is wound onto a continuous reel.
  • the reel can be separated into strips of intended length and width to suit user requirements.
  • the package bodies molded to each leadframe unit are separated or singulated into individual units which are then supplied to a user for use in packaging the sensor.
  • the lid assembly is shown in FIGS. 4A-4C .
  • the lid assembly comprises a high temperature plastic frame 50 , preferably an LCP material.
  • a glass lid 52 is chemically bonded to the plastic frame 50 preferably by thermal bonding to provide a hermetic seal between the glass lid and plastic frame.
  • the glass lid is preferably a boro-silicate glass of optical quality to provide appropriate light transmission to the image sensor housed within the package.
  • the frame 50 has a recessed shelf area as shown in which the lid 52 is disposed.
  • the lid is bonded to the shelf 53 .
  • the plastic frame has a peripheral configuration 54 which is complementary to a configuration provided about the periphery of the plastic frame of the package, as seen in FIG. 5 .
  • the lid assembly is ultrasonically welded at these mating configurations of the lid frame and package frame to provide an ultrasonic seal.
  • the sealed package with the lid assembly bonded to the package frame or body is shown in FIG. 5 .
  • the leads are preferably made of an alloy of copper including iron in a range between about 2.1% and about 2.6%, phosphorus in a range between about 0.015% and about 0.15%, zinc in a range between about 0.05% and about 0.2%, with the balance being copper. Other combinations of these materials are, however, acceptable.
  • the leads are more preferably made of about 97.5% copper, about 2.35% iron, about 0.3% phosphorus and about 0.12% zinc. Such an alloy is available from Olin Corporation under the UNS designation C19400.
  • the leads can be made of a ferrous alloy such as alloy 42 which is a nickel-iron alloy. Copper is plated onto the surfaces of the leadframe prior to molding of the plastic body or frame to the leadframe.
  • the package body or frame is a thermoplastic material which preferably is a high temperature liquid crystal polymer (LCP) material.
  • the plastic frame of the lid assembly is also preferably an LCP material.
  • the package body is composed of a Type I LCP material which has a relatively high melting temperature in the range of 300-350° C. This high temperature material is beneficial to withstand the temperatures employed for gold-tin die-attach which is often used for attachment of the image sensor chip to the copper substrate of the package.
  • a Type II LCP material can be used which has a melting temperature in the range of about 280-320° C.
  • the LCP composition includes filler particles which are added for dimensional stability, adjustment of coefficient of thermal expansion (CTE), adjustment of anisotrophy, lower permeability, attaining a small particle size to reduce contamination by dust, and optimizing their hermetic sealing.
  • the filler particles can include talc, glass, graphite, titanium dioxide, calcium carbonate, mica, boron nitride, quartz, and fused silica.
  • the particles may be in the form of nanospheres, or platy structures which are of flat plate-like configuration. A blend of such particles forms may also be employed.
  • the filler particles are talc in the form of a 50% blend of platy structures and nanospheres.
  • the talc particles may be less than 1 micron in diameter or width or may be in a larger size range of about 1-3 microns.
  • the platy structure of the particles interacts with the LCP molecules to provide some “bending” in the molecule which helps decrease anisotrophy.
  • Talc in the range of about 30-50% by weight in the LCP composition is one preferred range to optimize the CTE of the material.
  • the CTE of the LCP material should be in the range of about 6 ppm/° C.-25 ppm/° C. to be compatible with the CTE of the leadframe.
  • the filler particles of nano size are useful in enhancing the hermetic sealability of the material to the leadframe.
  • glass is used in various combinations of geometrical sizes, including fibers, milled glass, and flakes.
  • the frame of the lid assembly is also preferably an LCP material having filler particles preferably in the range of about 10-30% by weight.
  • an interfacial or intermediate layer is provided on the surfaces of the leadframe at least in the areas of the leadframe to which the plastic material is to be molded.
  • This interfacial layer is composed of two sub-layers; namely, a base layer of cuprous oxide formed on the leadframe or intended portions thereof, and a cupric oxide layer formed on the cuprous oxide layer.
  • the cupric oxide outer layer has an acicular, dendritic or needle like structure which provides an interlocking mechanism for adhesion to the plastic material molded thereto in forming the package.
  • the entire leadframe is coated prior to molding with the interfacial material. After molding of the frame to the leadframe, the exposed portions of the intermediate layer material outside the areas of the molded package body are removed.
  • the interfacial layer is provided by a chemical conversion process by which the copper surfaces of the leadframe are oxidized under process conditions which allow the cuprous oxide base layer and cupric oxide outer layer to form. Under the appropriate conditions, the cuprous oxide and cupric oxide layers grow or form substantially simultaneously.
  • An oxidizing material is employed such as a chemical oxidizer which has been modified by the addition of an alkaline solution of, for example, sodium chloride in an amount to provide a reaction temperature which is greater than about 125° F.
  • the reaction time and temperature after application of the oxidizing material to the leadframe determines the growth of the two interfacial layers.
  • the reaction time is greater than about ten minutes. In one embodiment, the reaction time after exposure of the leadframe to the oxidizing solution is about twenty minutes at a temperature of about 212-216° F.
  • the leadframe is typically immersed in a bath of oxidizing solution to provide the interfacial layer.
  • the interfacial layer has a thickness in the range of about 1-10 microns.
  • the base layer is thinner than the cupric oxide layer in a ration of about 1:5, although this range can vary under various process conditions.
  • the oxide material is of high density and has high adhesion strength to the copper on which it is formed.
  • This dual oxide layer serves to relieve stress in the interfacial layer and can withstand temperatures of at least 400° C. to avoid cracking or other degradation of the oxide which could otherwise occur during molding of the package body to the leadframe or by die-attach temperatures which may be employed in attaching the image sensor or other chip to the package mounting surface.
  • the acicular structure of the cupric oxide coating typically has a random pattern.
  • the cupric oxide also provides protection for the underlying cuprous oxide layer which is in contact with the copper. Such protection is by shielding the underlying layer from damage by hot temperatures which are present in molding the package and during die attach, and which can cause degradation of the copper/oxide interface.
  • the plastic package body molded to the leadframe which has been provided with the interfacial layer achieves a moisture resistant and hermetically sealed bond between the plastic body and the leadframe.
  • the subsequent bonding of the lid assembly to the package body, after installation of the image sensor in the package cavity, also provides a moisture resistant and hermetically sealed bond between the package body and lid assembly thus resulting in a hermetically sealed package.
  • the interfacial layer 60 is seen in the photomicrographs of FIG. 6 which shows cross-sections of the LCP package body material bonded to the copper leadframe.
  • the interfacial layer composed of the cuprous oxide layer formed on the copper surface and the cupric oxide layer formed on the cuprous oxide base layer, has the following properties and benefits.
  • the cuprous oxide forms a strong bond to the copper leadframe and is resistant to delamination.
  • the acicular topography of the cupric oxide reduces surface tension to promote wetting of the LCP for adhesion and enhanced surface roughness for increasing the surface area for bonding of the LCP material.
  • the cupric oxide also provides an inert top surface which impedes contamination and an inorganic low permeability material for moisture resistance.
  • the interfacial layer 60 is illustrated in the diagrammatic view of FIG. 7 and shows a cuprous oxide base layer (Cu 2 O) 62 for strong adhesion to copper leadframe 64 , and cupric oxide layer (CuO) 66 having an acicular or dendritic structure 48 and which is molded to the LCP package material.
  • a cuprous oxide base layer (Cu 2 O) 62 for strong adhesion to copper leadframe 64
  • cupric oxide layer (CuO) 66 having an acicular or dendritic structure 48 and which is molded to the LCP package material.
  • the layer can be provided by a chemical conversion process, which can be implemented in a standard in-line bath.
  • the leadframe can typically be in rack or reel-reel format.
  • This interfacial layer can be used with ferrous metals and alloys, as well as the copper described above. Such an interfacial layer can also be used as an interface between other metal and thermoplastic materials.
  • a metal element can be hermetically sealed to a thermoplastic element for a variety of purposes in which a hermetic seal is required between the metal and plastic components.
  • One such purpose is for hermetically sealed electronic packages as described herein, but is more broadly useful for a variety of electrical, electronic, mechanical and other structures where a hermetic or near hermetic seal is desired between metal and plastic materials.
  • FIG. 8A shows the steps of making the image sensor package.
  • the leadframe is made by stamping or chemical etching in step 70 .
  • An interfacial layer is formed on the leadframe in step 72 , at least in the portions to be molded to the LCP material.
  • the LCP material is molded to the leadframe in step 74 to create the package cavity.
  • the leadframe is plated in intended portions, such as the leads thereof, in step 76 .
  • the image sensor package may be singulated into individual pieces or packed in a strip or reel form.
  • FIG. 8B The fabrication of the lid assembly is shown in FIG. 8B .
  • a piece of glass is sawed or otherwise cut to a desired size in step 80 .
  • a ringframe of LCP material is made by injection molding in step 82 .
  • the glass lid is attached to the ringframe by a process of thermal attachment, such as thermal bonding in step 84 .
  • the lid may be attached to the lid frame by other techniques, such as insert molding.
  • FIG. 9 shows the steps a customer, or an end-user, may take for mounting an image sensor device in the image sensor package.
  • the device is bonded to the copper mounting surface of the package cavity.
  • the device contacts are wirebonded to potential contacts of the package, in step 92 .
  • the lid assembly is attached to the package frame such as by ultrasonic welding in step 94 .
  • the completed package is singulated in step 96 , if fabrication was in strip form.
  • the package constructed in accordance with the invention achieves a hermeticity which is comparable to conventional and more expensive ceramic packages.
  • the performance of the present invention in meeting stringent hermeticity requirements is described below.
  • MIL-STD-883 The traditional method of evaluating the hermeticity of a cavity package is by performing a helium leak test (MIL-STD-883).
  • MIL-STD-883 test condition 1014 The levels of hermeticity are governed by MIL-STD-883 test condition 1014 . The following are the hermetic rating and test methods:
  • Test Condition D Gross Leak using a Dye Penetrant (Destructive)
  • leakage due to openings at an interface should be small.
  • FIG. 10 shows the interfacial problems associated with a plastic molded LCP image sensor package using a standard LCP material. Adhesion of this material to the leadframe is non-optimum, and dye inserted in the cavity will leak through the LCP/Leadframe interface. This package with conventional plastic material will not meet the applicable industry standard. (MIL-STD-883, Test Condition D: Gross Leak using a Dye Penetrant).
  • FIG. 11 shows the construction of the present invention after the dye leak test.
  • the dye penetrant did not leak through the LCP/leadframe interface, allowing this package to meet the MIL-STD-883 standard.
  • FIG. 12 shows several materials which are used in semiconductor packaging.
  • non-hermetic packages polymers are used which have a permeability such that fluids and moisture can penetrate easily.
  • hermetic packaging materials are used which are relatively impervious to fluids and moisture.
  • the permeability of the “non-hermetic” materials is high, such that fluids and moisture can relatively easily penetrate the package.
  • Glass, ceramic, and metal have relatively low permeability, allowing for them to be suited for hermetic packaging.
  • the measured permeability of the LCP formulation used for the image sensor package of the present invention.
  • the permeability of the LCP formulation is equivalent to glass, making it most suitable for “hermetic” packaging.
  • the package constructed in accordance with the invention is hermetically sealed, the package can be employed to house components such as LEDs which may include a liquid or gel filled interior.
  • the present package avoids leakage of the gel which can occur in conventional packages which are not adequately sealed.
  • the invention has been described for use in an image sensor package, the invention is not limited to image sensor packages or optical packages but is useful for providing a plastic package for containing other semiconductor, electric or electrical components, devices or circuits.
  • the lid assembly can be molded in one piece which includes the lid or cover portion and surrounding frame which is bondable to the package frame.
  • the interfacial layer of the present invention is not limited to use between a leadframe and a plastic frame but is more generally useful as an interfacial layer between a metal and a plastic in other than circuit or device packages. Accordingly, the invention is not to be limited by the embodiments shown and described but is to embrace the full spirit and scope of the accompanying claims.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
US12/001,792 2006-12-12 2007-12-12 Plastic electronic component package Abandoned US20080150064A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/001,792 US20080150064A1 (en) 2006-12-12 2007-12-12 Plastic electronic component package
US12/220,543 US20080305355A1 (en) 2006-12-12 2008-07-25 Plastic electronic component package
US12/950,528 US8039945B2 (en) 2006-12-12 2010-11-19 Plastic electronic component package

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87445006P 2006-12-12 2006-12-12
US12/001,792 US20080150064A1 (en) 2006-12-12 2007-12-12 Plastic electronic component package

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/220,543 Division US20080305355A1 (en) 2006-12-12 2008-07-25 Plastic electronic component package

Publications (1)

Publication Number Publication Date
US20080150064A1 true US20080150064A1 (en) 2008-06-26

Family

ID=39512337

Family Applications (3)

Application Number Title Priority Date Filing Date
US12/001,792 Abandoned US20080150064A1 (en) 2006-12-12 2007-12-12 Plastic electronic component package
US12/220,543 Abandoned US20080305355A1 (en) 2006-12-12 2008-07-25 Plastic electronic component package
US12/950,528 Active US8039945B2 (en) 2006-12-12 2010-11-19 Plastic electronic component package

Family Applications After (2)

Application Number Title Priority Date Filing Date
US12/220,543 Abandoned US20080305355A1 (en) 2006-12-12 2008-07-25 Plastic electronic component package
US12/950,528 Active US8039945B2 (en) 2006-12-12 2010-11-19 Plastic electronic component package

Country Status (5)

Country Link
US (3) US20080150064A1 (fr)
EP (1) EP2100323A4 (fr)
JP (1) JP2010512665A (fr)
CN (1) CN101589454B (fr)
WO (1) WO2008073485A2 (fr)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090184335A1 (en) * 2008-01-23 2009-07-23 Yoshiki Takayama Optical semiconductor device
CN101823341A (zh) * 2009-03-06 2010-09-08 住友化学株式会社 用于将液晶聚合物的模制品和玻璃基体彼此熔融结合的方法和由该方法得到的复合制品
US20110057216A1 (en) * 2009-09-10 2011-03-10 Tong Hsing Electric Industries Ltd. Low profile optoelectronic device package
US20110170259A1 (en) * 2008-10-09 2011-07-14 Gm Global Technology Operations, Inc. Power inverters
WO2011137305A1 (fr) * 2010-04-30 2011-11-03 Solar Junction Corporation Boîtier de cellule solaire semi-conducteur
US8481420B2 (en) 2011-03-15 2013-07-09 Stats Chippac Ltd. Integrated circuit packaging system with lead frame stacking module and method of manufacture thereof
US20130193545A1 (en) * 2012-01-27 2013-08-01 Samsung Electronics Co., Ltd. Semiconductor apparatus and image sensor package using the same
US20140306333A1 (en) * 2013-04-11 2014-10-16 Ubotic Company Limited Cavity package with die attach pad
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
US9337360B1 (en) 2009-11-16 2016-05-10 Solar Junction Corporation Non-alloyed contacts for III-V based solar cells
US20170069560A1 (en) * 2014-05-23 2017-03-09 Materion Corporation Air cavity package
US9680035B1 (en) 2016-05-27 2017-06-13 Solar Junction Corporation Surface mount solar cell with integrated coverglass
CN107301988A (zh) * 2017-05-27 2017-10-27 格科微电子（上海）有限公司 摄像头模组及其装配方法
US10090420B2 (en) 2016-01-22 2018-10-02 Solar Junction Corporation Via etch method for back contact multijunction solar cells
WO2018209269A1 (fr) * 2017-05-12 2018-11-15 Iqlp, Llc Matériau d'enceinte en polymère à cristaux liquides
US10244635B2 (en) * 2016-03-03 2019-03-26 Mitsui Mining & Smelting Co., Ltd. Production method for copper-clad laminate plate
CN111092065A (zh) * 2018-10-24 2020-05-01 株式会社三井高科技 引线框架及引线框架封装体
US10818580B2 (en) * 2017-07-07 2020-10-27 Shinko Electric Industries Co., Ltd. Electronic component device
CN112002683A (zh) * 2020-08-25 2020-11-27 湖南方彦半导体有限公司 一种半导体框架
TWI721837B (zh) * 2020-03-26 2021-03-11 勝麗國際股份有限公司 感測器封裝結構
US20220041436A1 (en) * 2019-01-31 2022-02-10 Robert Bosch Gmbh Method for producing a plurality of sensor devices, and sensor device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237171B2 (en) * 2010-02-09 2012-08-07 Microsemi Corporation High voltage high package pressure semiconductor package
US8587107B2 (en) 2010-02-09 2013-11-19 Microsemi Corporation Silicon carbide semiconductor
US20120028011A1 (en) * 2010-07-27 2012-02-02 Chong Pyung An Self-passivating mechanically stable hermetic thin film
US20130025745A1 (en) * 2011-07-27 2013-01-31 Texas Instruments Incorporated Mask-Less Selective Plating of Leadframes
MX2014003726A (es) 2011-09-30 2014-07-09 Saint Gobain Performance Plast Articulo de fluoropolimero procesado por fusion y metodo para procesar por fusion fluoropolimeros.
CN102610585B (zh) * 2011-12-19 2015-01-14 佛山市蓝箭电子股份有限公司 一种封装硅芯片的方法及其形成的电子元件
CN102820409A (zh) * 2012-08-13 2012-12-12 深圳市灏天光电有限公司 一种大功率led支架及大功率led封装结构
WO2014027955A1 (fr) * 2012-08-16 2014-02-20 Unisteel Technology International Limited Nouveau procédé destiné à fabriquer un nouveau nanocomposite lcp
US9466544B2 (en) 2013-01-30 2016-10-11 Freescale Semiconductor, Inc. Semiconducitive catechol group encapsulant adhesion promoter for a packaged electronic device
DE102015108078A1 (de) * 2015-05-21 2016-11-24 Aesculap Ag Elektrochirurgisches Koagulationsinstrument
US20180076118A1 (en) * 2016-09-09 2018-03-15 Advanced Semiconductor Engineering, Inc. Semiconductor device package
CN106252289B (zh) * 2016-09-29 2019-02-01 山东盛品电子技术有限公司 一种提高气密性的塑封管壳产品及制备方法
CN106298685B (zh) * 2016-09-29 2019-01-04 中国船舶重工集团公司第七一九研究所 一种采用超声波焊接的电子芯片封装结构
JP6923423B2 (ja) * 2017-11-21 2021-08-18 Ｔｏｗａ株式会社 搬送装置、樹脂成形装置及び樹脂成形品の製造方法

Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288081A (en) * 1979-04-28 1981-09-08 Shin-Etsu Polymer Company, Ltd. Gaskets for electric shielding
US4880591A (en) * 1988-04-05 1989-11-14 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing speaker vibration member
US5122862A (en) * 1989-03-15 1992-06-16 Ngk Insulators, Ltd. Ceramic lid for sealing semiconductor element and method of manufacturing the same
US5343076A (en) * 1990-07-21 1994-08-30 Mitsui Petrochemical Industries, Ltd. Semiconductor device with an airtight space formed internally within a hollow package
US5529959A (en) * 1992-06-23 1996-06-25 Sony Corporation Charge-coupled device image sensor
US5586214A (en) * 1994-12-29 1996-12-17 Energy Convertors, Inc. Immersion heating element with electric resistance heating material and polymeric layer disposed thereon
US5691689A (en) * 1995-08-11 1997-11-25 Eaton Corporation Electrical circuit protection devices comprising PTC conductive liquid crystal polymer compositions
US6011294A (en) * 1996-04-08 2000-01-04 Eastman Kodak Company Low cost CCD packaging
US6313525B1 (en) * 1997-07-10 2001-11-06 Sony Corporation Hollow package and method for fabricating the same and solid-state image apparatus provided therewith
US6409859B1 (en) * 1998-06-30 2002-06-25 Amerasia International Technology, Inc. Method of making a laminated adhesive lid, as for an Electronic device
US6455774B1 (en) * 1999-12-08 2002-09-24 Amkor Technology, Inc. Molded image sensor package
US6525405B1 (en) * 2000-03-30 2003-02-25 Alphatec Holding Company Limited Leadless semiconductor product packaging apparatus having a window lid and method for packaging
US20030124393A1 (en) * 2001-12-25 2003-07-03 Ngk Insulators, Ltd. Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
US6767753B2 (en) * 2001-01-17 2004-07-27 Siliconware Precision Industries Co., Ltd. Image sensor of a quad flat package
US20040184239A1 (en) * 2003-01-29 2004-09-23 Michael Zimmerman Package for integrated circuit die
US20040207056A1 (en) * 2003-04-16 2004-10-21 Shinko Electric Industries Co., Ltd. Conductor substrate, semiconductor device and production method thereof
US20040245590A1 (en) * 2003-06-05 2004-12-09 Jackson Hsieh Image sensor package
US20050253227A1 (en) * 2001-05-08 2005-11-17 Nec Compound Semiconductor Devices, Ltd. Resin-molded package with cavity structure
US20060025415A1 (en) * 2003-08-08 2006-02-02 Gonzalez Jesus E Iii Compositions useful as inhibitors of voltage-gated sodium channels
US20060131707A1 (en) * 2004-12-18 2006-06-22 Carberry Patrick J Semiconductor device package with reduced leakage

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2876092B2 (ja) * 1990-12-28 1999-03-31 イビデン株式会社 電子部品搭載用基板におけるリードフレームの表面処理方法
US5250654A (en) * 1992-05-04 1993-10-05 E. I. Du Pont De Nemours And Company Thermotropic liquid crystalline polyester compositions
JP3270862B2 (ja) * 1992-09-02 2002-04-02 ソニー株式会社 固体撮像装置の製造方法
JPH0677526A (ja) * 1992-08-25 1994-03-18 Nippondenso Co Ltd 樹脂封止形光電変換装置及びその製造方法
JPH0685221A (ja) * 1992-08-31 1994-03-25 Sony Corp 固体撮像装置
JP2853550B2 (ja) * 1994-01-25 1999-02-03 松下電工株式会社 エポキシ樹脂組成物及びその製造方法及びそれを用いた半導体装置
JP3407218B2 (ja) * 1998-12-09 2003-05-19 富士電機株式会社 半導体光センサデバイス
JP2001127229A (ja) * 1999-11-01 2001-05-11 Nec Corp リードフレーム及びそのリードフレームを用いた樹脂封止型半導体装置
JP2001210776A (ja) * 2000-01-24 2001-08-03 Fujitsu Ltd 半導体装置とその製造方法及びリードフレームとその製造方法
JP2001335708A (ja) * 2000-05-26 2001-12-04 Matsushita Electric Works Ltd 熱可塑性樹脂組成物、その製造方法、並びに半導体素子収納用パッケージ
JP2002094035A (ja) * 2000-09-14 2002-03-29 Shinko Electric Ind Co Ltd 光透過用キャップ及びその製造方法
JP2002363395A (ja) * 2001-05-31 2002-12-18 Toray Ind Inc 封止用樹脂組成物、成形品および電子封止部品
US7645635B2 (en) * 2004-08-16 2010-01-12 Micron Technology, Inc. Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages
JP2006303484A (ja) * 2005-03-25 2006-11-02 Sumitomo Chemical Co Ltd 固体撮像装置、固体撮像素子収納用ケース及び製造方法

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288081A (en) * 1979-04-28 1981-09-08 Shin-Etsu Polymer Company, Ltd. Gaskets for electric shielding
US4880591A (en) * 1988-04-05 1989-11-14 Mitsubishi Denki Kabushiki Kaisha Method for manufacturing speaker vibration member
US5122862A (en) * 1989-03-15 1992-06-16 Ngk Insulators, Ltd. Ceramic lid for sealing semiconductor element and method of manufacturing the same
US5343076A (en) * 1990-07-21 1994-08-30 Mitsui Petrochemical Industries, Ltd. Semiconductor device with an airtight space formed internally within a hollow package
US5529959A (en) * 1992-06-23 1996-06-25 Sony Corporation Charge-coupled device image sensor
US5586214A (en) * 1994-12-29 1996-12-17 Energy Convertors, Inc. Immersion heating element with electric resistance heating material and polymeric layer disposed thereon
US5691689A (en) * 1995-08-11 1997-11-25 Eaton Corporation Electrical circuit protection devices comprising PTC conductive liquid crystal polymer compositions
US6011294A (en) * 1996-04-08 2000-01-04 Eastman Kodak Company Low cost CCD packaging
US6313525B1 (en) * 1997-07-10 2001-11-06 Sony Corporation Hollow package and method for fabricating the same and solid-state image apparatus provided therewith
US6409859B1 (en) * 1998-06-30 2002-06-25 Amerasia International Technology, Inc. Method of making a laminated adhesive lid, as for an Electronic device
US6455774B1 (en) * 1999-12-08 2002-09-24 Amkor Technology, Inc. Molded image sensor package
US6525405B1 (en) * 2000-03-30 2003-02-25 Alphatec Holding Company Limited Leadless semiconductor product packaging apparatus having a window lid and method for packaging
US6767753B2 (en) * 2001-01-17 2004-07-27 Siliconware Precision Industries Co., Ltd. Image sensor of a quad flat package
US20050253227A1 (en) * 2001-05-08 2005-11-17 Nec Compound Semiconductor Devices, Ltd. Resin-molded package with cavity structure
US20030124393A1 (en) * 2001-12-25 2003-07-03 Ngk Insulators, Ltd. Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
US20040184239A1 (en) * 2003-01-29 2004-09-23 Michael Zimmerman Package for integrated circuit die
US20050016750A1 (en) * 2003-01-29 2005-01-27 Quantum Leap Packaging, Inc. Methods for enclosing a thermoplastic package
US20040207056A1 (en) * 2003-04-16 2004-10-21 Shinko Electric Industries Co., Ltd. Conductor substrate, semiconductor device and production method thereof
US7301226B2 (en) * 2003-04-16 2007-11-27 Shinko Electric Industries Co., Ltd. Conductor substrate, semiconductor device and production method thereof
US20040245590A1 (en) * 2003-06-05 2004-12-09 Jackson Hsieh Image sensor package
US20060025415A1 (en) * 2003-08-08 2006-02-02 Gonzalez Jesus E Iii Compositions useful as inhibitors of voltage-gated sodium channels
US20060131707A1 (en) * 2004-12-18 2006-06-22 Carberry Patrick J Semiconductor device package with reduced leakage

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928547B2 (en) * 2008-01-23 2011-04-19 Panasonic Corporation Optical semiconductor device
US20110163328A1 (en) * 2008-01-23 2011-07-07 Panasonic Corporation Optical semiconductor device
US20090184335A1 (en) * 2008-01-23 2009-07-23 Yoshiki Takayama Optical semiconductor device
US20110170259A1 (en) * 2008-10-09 2011-07-14 Gm Global Technology Operations, Inc. Power inverters
CN101823341A (zh) * 2009-03-06 2010-09-08 住友化学株式会社 用于将液晶聚合物的模制品和玻璃基体彼此熔融结合的方法和由该方法得到的复合制品
US20100227175A1 (en) * 2009-03-06 2010-09-09 Sumitomo Chemical Company, Limited Method for fusion bonding molded article of liquid crystalline polymer and glass substrate to each other and composite article obtained by the method
US20110057216A1 (en) * 2009-09-10 2011-03-10 Tong Hsing Electric Industries Ltd. Low profile optoelectronic device package
US9337360B1 (en) 2009-11-16 2016-05-10 Solar Junction Corporation Non-alloyed contacts for III-V based solar cells
WO2011137305A1 (fr) * 2010-04-30 2011-11-03 Solar Junction Corporation Boîtier de cellule solaire semi-conducteur
US9214586B2 (en) 2010-04-30 2015-12-15 Solar Junction Corporation Semiconductor solar cell package
US8962989B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Flexible hermetic semiconductor solar cell package with non-hermetic option
US8962988B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Integrated semiconductor solar cell package
US8481420B2 (en) 2011-03-15 2013-07-09 Stats Chippac Ltd. Integrated circuit packaging system with lead frame stacking module and method of manufacture thereof
US20130193545A1 (en) * 2012-01-27 2013-08-01 Samsung Electronics Co., Ltd. Semiconductor apparatus and image sensor package using the same
US20140306333A1 (en) * 2013-04-11 2014-10-16 Ubotic Company Limited Cavity package with die attach pad
US9601413B2 (en) * 2013-04-11 2017-03-21 Ubotic Company Limited Cavity package with die attach pad
US20170069560A1 (en) * 2014-05-23 2017-03-09 Materion Corporation Air cavity package
US10090420B2 (en) 2016-01-22 2018-10-02 Solar Junction Corporation Via etch method for back contact multijunction solar cells
US10244635B2 (en) * 2016-03-03 2019-03-26 Mitsui Mining & Smelting Co., Ltd. Production method for copper-clad laminate plate
US9680035B1 (en) 2016-05-27 2017-06-13 Solar Junction Corporation Surface mount solar cell with integrated coverglass
WO2018209269A1 (fr) * 2017-05-12 2018-11-15 Iqlp, Llc Matériau d'enceinte en polymère à cristaux liquides
US11695178B2 (en) * 2017-05-12 2023-07-04 Ionic Materials, Inc. Liquid crystal polymer battery enclosure material
CN107301988A (zh) * 2017-05-27 2017-10-27 格科微电子（上海）有限公司 摄像头模组及其装配方法
US10818580B2 (en) * 2017-07-07 2020-10-27 Shinko Electric Industries Co., Ltd. Electronic component device
CN111092065A (zh) * 2018-10-24 2020-05-01 株式会社三井高科技 引线框架及引线框架封装体
US11088056B2 (en) * 2018-10-24 2021-08-10 Mitsui High-Tec, Inc. Leadframe and leadframe package
US20220041436A1 (en) * 2019-01-31 2022-02-10 Robert Bosch Gmbh Method for producing a plurality of sensor devices, and sensor device
TWI721837B (zh) * 2020-03-26 2021-03-11 勝麗國際股份有限公司 感測器封裝結構
CN112002683A (zh) * 2020-08-25 2020-11-27 湖南方彦半导体有限公司 一种半导体框架

Also Published As

Publication number Publication date
US8039945B2 (en) 2011-10-18
US20080305355A1 (en) 2008-12-11
EP2100323A4 (fr) 2011-12-07
WO2008073485A2 (fr) 2008-06-19
CN101589454B (zh) 2012-05-16
US20110064881A1 (en) 2011-03-17
JP2010512665A (ja) 2010-04-22
WO2008073485A4 (fr) 2008-12-31
CN101589454A (zh) 2009-11-25
WO2008073485A3 (fr) 2008-11-13
EP2100323A2 (fr) 2009-09-16

Similar Documents

Publication Publication Date Title
US8039945B2 (en) Plastic electronic component package
US5399805A (en) Metal electronic package with reduced seal width
US4897508A (en) Metal electronic package
US5458716A (en) Methods for manufacturing a thermally enhanced molded cavity package having a parallel lid
CA1200923A (fr) Boitiers pour dispositifs a semiconducteurs
AU2002310466B2 (en) Use of diverse materials in air-cavity packaging of electronic devices
US8263862B2 (en) Hermetic electrical ports in liquid crystal polymer packages
KR101466428B1 (ko) 기밀 봉지용 캡
US8508036B2 (en) Ultra-thin near-hermetic package based on rainier
AU2002310466A1 (en) Use of diverse materials in air-cavity packaging of electronic devices
EP0754350A1 (fr) Boitier electronique metallique a cavite remplie
JP2008300554A (ja) 半導体装置
JPS60160145A (ja) 混成集積回路のパツケ−ジング
CA1304172C (fr) Boitier metallique pour dispositif electronique
JP3070929B2 (ja) パッケージの組立方法とパッケージ
JP2005217212A (ja) 半導体素子用中空パッケージ
Elwenspoek et al. Packaging
Chung New approach to low cost cavity packaging
FR2685159A1 (fr) Procede de fabrication de circuits electroniques a micro-composants nus et circuit encapsule realisable par ce procede.

Legal Events

Date Code Title Description
AS Assignment

Owner name: QUANTUM LEAP PACKAGING, INC, MASSACHUSETTS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ZIMMERMAN, MICHAEL A.;SMITH, KEITH;SHVERDIN, JACOB;REEL/FRAME:020486/0678

Effective date: 20080108

AS Assignment

Owner name: INTERPLEXED ENGINEERED PRODUCTS, INC., RHODE ISLAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:QUANTUM LEAP PACKAGING, INC.;REEL/FRAME:022892/0082

Effective date: 20090624

Owner name: INTERPLEXED ENGINEERED PRODUCTS, INC.,RHODE ISLAND

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:QUANTUM LEAP PACKAGING, INC.;REEL/FRAME:022892/0082

Effective date: 20090624

AS Assignment

Owner name: INTERPLEX ENGINEERED PRODUCTS, INC., RHODE ISLAND

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE'S NAME PREVIOUSLY RECORDED ON REEL 022892 FRAME 0082;ASSIGNOR:QUANTUM LEAP PACKAGING, INC.;REEL/FRAME:022915/0962

Effective date: 20090624

Owner name: INTERPLEX ENGINEERED PRODUCTS, INC.,RHODE ISLAND

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE'S NAME PREVIOUSLY RECORDED ON REEL 022892 FRAME 0082. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:QUANTUM LEAP PACKAGING, INC.;REEL/FRAME:022915/0962

Effective date: 20090624

Owner name: INTERPLEX ENGINEERED PRODUCTS, INC., RHODE ISLAND

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE'S NAME PREVIOUSLY RECORDED ON REEL 022892 FRAME 0082. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT;ASSIGNOR:QUANTUM LEAP PACKAGING, INC.;REEL/FRAME:022915/0962

Effective date: 20090624

AS Assignment

Owner name: INTERPLEX ENGINEERED PRODUCTS, INC., RHODE ISLAND

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:QUANTUM LEAP PACKAGING, INC.;REEL/FRAME:022951/0884

Effective date: 20090626

Owner name: INTERPLEX ENGINEERED PRODUCTS, INC.,RHODE ISLAND

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:QUANTUM LEAP PACKAGING, INC.;REEL/FRAME:022951/0884

Effective date: 20090626

AS Assignment

Owner name: INTERPLEX QLP, INC., NEW YORK

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INTERPLEX ENGINEERED PRODUCTS, INC.;REEL/FRAME:022960/0406

Effective date: 20090701

Owner name: INTERPLEX QLP, INC.,NEW YORK

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INTERPLEX ENGINEERED PRODUCTS, INC.;REEL/FRAME:022960/0406

Effective date: 20090701

AS Assignment

Owner name: IQLP, LLC, NEW YORK

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:INTERPLEX QLP, INC.;REEL/FRAME:028028/0221

Effective date: 20120228

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION