US20070209547A1 - Barrier Film For Flexible Copper Substrate And Sputtering Target For Forming Barrier Film - Google Patents

Barrier Film For Flexible Copper Substrate And Sputtering Target For Forming Barrier Film Download PDF

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Publication number
US20070209547A1
US20070209547A1 US11/573,167 US57316705A US2007209547A1 US 20070209547 A1 US20070209547 A1 US 20070209547A1 US 57316705 A US57316705 A US 57316705A US 2007209547 A1 US2007209547 A1 US 2007209547A1
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Prior art keywords
film
barrier
film thickness
target
barrier film
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US11/573,167
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Inventor
Shuichi Irumata
Yasuhiro Yamakoshi
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JX Nippon Mining and Metals Corp
Nippon Mining Holdings Inc
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Nippon Mining and Metals Co Ltd
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Assigned to NIPPON MINING & METALS CO., LTD. reassignment NIPPON MINING & METALS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IRUMATA, SHUICHI, YAMAKOSHI, YASUHIRO
Publication of US20070209547A1 publication Critical patent/US20070209547A1/en
Assigned to NIPPON MINING HOLDINGS, INC. reassignment NIPPON MINING HOLDINGS, INC. MERGER (SEE DOCUMENT FOR DETAILS). Assignors: NIPPON MINING & METALS CO., LTD.
Assigned to JX NIPPON MINING & METALS CORPORATION reassignment JX NIPPON MINING & METALS CORPORATION CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: NIPPON MINING HOLDINGS, INC.
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12556—Organic component
    • Y10T428/12569—Synthetic resin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12708—Sn-base component
    • Y10T428/12715—Next to Group IB metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y10T428/12847—Cr-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12903—Cu-base component
    • Y10T428/1291—Next to Co-, Cu-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
    • Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide

Definitions

  • the present invention relates to a barrier film for a flexible copper substrate and a sputtering target for forming such barrier film capable of effectively inhibiting the diffusion of copper to a resin film such as polyimide.
  • a copper layer is formed on a resin film such as polyimide, which is to become the base film, upon manufacturing a flexible copper substrate, Specifically, a copper seed layer is formed on the polyimide film by sputtering or electroless deposition, and a thick copper plated layer is formed thereon. Thereafter, the copper is subject to etching so as to form a copper circuit pattern.
  • the problem here is that the copper formed on the polyimide film easily diffuses (migrates) in the polyimide film, and causes a short circuit in the wiring on the circuit board.
  • Patent Document 1 there is technology which forms a Ni—Cr alloy barrier layer (refer to Patent Document 1).
  • the barrier characteristics can be improved by thickening the conventional barrier layer. Nevertheless, when the thickness exceeds a certain value, another problem occurs in that the barrier film would peel from the polyimide film. Therefore, this method was insufficient to become a fundamental solution.
  • thermoplastic polyimide layer on a thermosetting polyimide base film, covering this with a barrier metal formed from at least one type of metal selected from Ni, Cr, Co and Mo, heating and fluidizing the thermoplastic resin, and increasing the bonding strength between the thermoplastic polyimide and the barrier metal (refer to Patent Document 2).
  • Patent Document 1 Japanese Patent Laid-Open Publication No. 2002-252257
  • Patent Document 2 Japanese Patent Laid-Open Publication No. 2002-280684
  • an object of the present invention is to obtain a barrier film for a flexible copper substrate and a sputtering target for forming such barrier film.
  • the barrier film for a flexible copper substrate can inhibit the diffusion of copper to a resin film such as polyimide. Further, the film thickness is thin enough to prevent film peeling, and is capable of obtaining a sufficient barrier effect even in a minute wiring pitch. Moreover, the barrier characteristics will not change even when the temperature rises due to heat treatment or the like.
  • the present inventors discovered that the foregoing problems can be overcome by using an alloy having effective barrier characteristics, forming the barrier film as thin as possible in order to prevent peeling, and improving the uniformity of the deposited film.
  • the present invention provides:
  • the barrier film for a flexible copper substrate of the present invention yields superior effects in that it has a film thickness that is thin enough to prevent film peeling, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch, and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.
  • the present invention yields significant characteristics in that it is capable of effectively inhibiting the diffusion of copper to a resin film such as polyimide.
  • FIG. 1 is a diagram showing the analysis (AES) of Cu diffusion in the case of using the Co—Cr alloy barrier film of Example 1;
  • FIG. 2 is a diagram showing the analysis (AES) of Cu diffusion in the case of using the Ni—Cr alloy barrier film of Comparative Example 1.
  • the barrier film for a flexible copper substrate according to the present invention is a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co.
  • the Cr content In the film composition, if the Cr content is less than 5 wt %, the barrier properties will be insufficient, and there will be no advantage over conventional barrier films. Further, if the Cr content exceeds 30 wt %, it would be impractical since the barrier film will interfere with the etching of the Cu layer to form a circuit, and much time will be required in eliminating such barrier film. Accordingly, the Cr content shall be within the foregoing range.
  • the film thickness of the barrier film for a flexible copper substrate of the present invention shall be 3 to 150 nm. If the film thickness is less than 3 nm, sufficient barrier properties cannot be obtained. Further, if the film thickness exceeds 150 nm, the film will easily peel. Thus, the film thickness shall be within the foregoing range.
  • the film thickness of the barrier film for a flexible copper substrate of the present invention shall have a film thickness uniformity of 10% or less at 1 ⁇ .
  • the film thickness uniformity (1 ⁇ ) exceeds 10%, there is a problem in that, during etching process, the portion where the barrier film is thin will be etched broader than the portion to be removed when etching is performed until the thick portion of the barrier film is to be removed, and the linewidth of such portion will become narrow. As a result, the durability of the actual device will deteriorate. Accordingly, the film thickness uniformity (1 ⁇ ) shall be 10% or less.
  • the sputtering target for forming a barrier film according to the present invention employs a Co—Cr alloy target containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co.
  • the composition of the Co—Cr alloy target of the present invention is directly reflected to the composition of the barrier film. In other words, when the Cr content in the target composition is less than 5 wt %, it is not possible to deposit a Co alloy film having 5 wt % or more of Cr.
  • the composition of the Co—Cr alloy target shall be within the foregoing range.
  • the relative magnetic permeability in the in-plane direction of the sputtered face shall be 100 or less. If the relative magnetic permeability exceeds 100, the film thickness uniformity of the sputtered film will exceed 10% at 1 ⁇ .
  • the Co—Cr alloy target of the present invention has an average grain size of 500 ⁇ m or less, preferably 100 ⁇ m or less. This is because if the average grain size exceeds 500 ⁇ m, the generation of particles will increase, a film defect known as pinholes will increase, and the production yield will deteriorate.
  • the variation of the average grain size in the target is 30% or less. This is because if the variation of the average grain size exceeds 30%, the film thickness uniformity of the film subject to sputtering deposition could exceed 10% at 1 ⁇ .
  • the target board Upon manufacturing the target of the present invention, it is desirable to process the target board with a combination of hot forging and rolling at 800 to 1370° C.
  • the heat treated plate obtained as described above is machined into a target shape, and the average roughness (Ra) of the sputtering surface is made to be 0.01 to 5 ⁇ m.
  • the non-sputtering surface such as the target side or backing plate; that is, the portions to which the sputtered substances adhere, should be roughened such that the average roughness (Ra) of the surface becomes 1 to 50 ⁇ m by bead blasting, etching or spraying so as to prevent the peeling of the deposited film. This is because substances that peel and float in the sputtering atmosphere cause the generation of particles on the substrate.
  • the target of the present invention is bonded to a backing plate formed from an Al alloy, Cu, Cu alloy, Ti, or Ti alloy by way of metallic bonding such as brazing, diffusion bonding or friction pressure welding so that it can endure high power sputtering.
  • the concentrations of Na and K are respectively 5 ppm or less (hereinafter, ppm represents wtppm), the concentrations of U and Th are respectively 0.05 ppm or less, the total amount of metallic elements except principal elements and added elements is 0.5 wt % or less, and the oxygen concentration is 0.5 wt % or less.
  • the composition of Co-20 wt % Cr was subject to melting and casting to prepare a Co—Cr ingot.
  • This ingot was subject to hot forging and hot rolling at 1100° C., cooled, and thereafter subject to heat treatment at 500° C. for 2 hours and machined into a target.
  • the grain size of this target was 280 ⁇ m. This target was further subject to finishing so that the average surface roughness Ra became 0.14 ⁇ m.
  • the Cr concentration of the target was 19.1 wt %
  • impurity components were 0.2 ppm of Na, 0.1 ppm of K, 0.02 ppm of U, 0.03 ppm of Th
  • the total content of metal components was 470 ppm
  • the oxygen content was 10 ppm.
  • This target was bonded to the backing plate with indium, and the target side and the backing plate near the target were subject to bead blasting and coarsened until the Ra became 7.5 ⁇ m.
  • This target was used to prepare a barrier layer having a film thickness of 140 nm.
  • a barrier layer having a film thickness of 140 nm.
  • the film thickness of this barrier layer was measured with a 49-point measurement, and the film thickness uniformity was 7.2% at 1 ⁇ .
  • Cu layer of 200 nm thickness was deposited on this barrier layer with sputtering.
  • FIG. 1 shows the results of depth profile with AES.
  • the barrier film formed from Co—Cr that were subject to heat treatment at 300° C.
  • the Cu profile was the same profile as the sample that was not subject to heat treatment, and diffusion to the barrier layer could not be acknowledged.
  • the grain size of the target was 300 ⁇ m, and the surface roughness was subject to finishing so that the Ra became 0.15 ⁇ m.
  • the Cr concentration in the target was 19.7 wt %
  • impurity components were 0.1 ppm of Na, 0.3 ppm of K, 0.02 ppm of U, 0.04 ppm of Th, the total content of metal components was 510 ppm, and the oxygen content was 10 ppm.
  • This target was bonded to the backing plate with indium, and the target side and the backing plate near the target were subject to bead blasting and roughened until the Ra became 7.0 ⁇ m.
  • the relative magnetic permeability in the in-plane direction of the target was 130.
  • a barrier film having a film thickness of 140 nm was formed on a SiO 2 substrate so that the barrier film would not peel.
  • this barrier layer As a result of the composition analysis of the respective added components of this barrier layer, there was 18.5 wt % of Cr and the composition of the layer is slightly lower than that of the target.
  • the film thickness of this barrier layer was measured at 49-point, and the film thickness uniformity was 7.4% at 1 ⁇ .
  • a 200 nm Cu film was deposited on this barrier layer with sputtering.
  • a profile in the depth direction of a sample only subject to the foregoing deposition and a sample that was further subject to heat treatment in a vacuum at 300° C. ⁇ 2 hours were analyzed by AES (Auger electron spectroscopy), and the diffusion of Cu to the barrier layer was evaluated.
  • FIG. 2 shows the results of AES.
  • the Cu of the sample that was subject to heat treatment at 300° C. was diffused deeper into the barrier layer in comparison to the sample that was not subject to heat treatment. In other words, it has been discovered that the function as a barrier layer is inferior.
  • a target was prepared with the same manufacturing method as Example 1, and such target having an alloy composition and relative magnetic permeability within the range of the present invention shown in Table 1 was used to form a barrier layer having a film thickness of 10 nm on a polyimide sheet having a thickness of 38 ⁇ m.
  • composition (wt %) of the respective added components of the barrier layer is similarly shown in Table 1.
  • the film composition (wt %), film thickness (nm), and film thickness uniformity (%) of the barrier film of Examples 2 to 8 were all within the range of the present invention.
  • Examples 2 to 8 did not cause a short circuit in its wires.
  • composition (wt %) of the respective added components of the barrier layer is similarly shown in Table 1.
  • the alloy component (Ni—Cr) of the barrier film of Comparative Example 2 is out of the range of the present invention.
  • a target was prepared with the same manufacturing method as Example 1, and a target having an alloy composition outside the range of the present invention (Cr content is less than the present invention) as shown in Table 1 was used to form a Co—Cr barrier layer having a film thickness of 10 nm on a polyimide sheet having a thickness of 38 ⁇ m.
  • composition (wt %) of the respective added components of the barrier layer is similarly shown in Table 1.
  • the film composition (3.5 wt % of Cr) of the barrier film of Comparative Example 3 was less than the Cr content (5 to 30 wt %) of the film according to the present invention.
  • Comparative Example 3 lasted for 210 hours, it caused a short circuit in the wires thereafter.
  • a target was prepared with the same manufacturing method as Example 1, and a target having an alloy composition outside the range of the present invention (Cr content is more than the present invention) as shown in Table 1 was used to form a Co—Cr barrier layer having a film thickness of 10 nm on a polyimide sheet having a thickness of 38 ⁇ m.
  • composition (wt %) of the respective added components of the barrier layer is similarly shown in Table 1.
  • the film composition (33.1 wt % of Cr) of the barrier film of Comparative Example 4 was less than the Cr content (5 to 30 wt %) of the film according to the present invention.
  • a target was prepared with the same manufacturing method as Example 1, and a target having a relative magnetic permeability outside the range of the present invention as shown in Table 1 was used to form a Co—Cr barrier layer having a film thickness of 10 nm on a polyimide sheet having a thickness of 38 ⁇ m.
  • composition (wt %) of the respective added components of the barrier layer is similarly shown in Table 1.
  • Comparative Example 5 lasted for 470 hours, it caused a short circuit in the wires thereafter.
  • the film thickness uniformity was also considerably inferior.
  • a target was prepared with the same manufacturing method as Example 1, and a target shown in Table 1 was used to perform sputtering, and a Co—Cr barrier layer having a film thickness of 2.5 nm which is out of the range of the present invention (thinner than the present invention) was formed on a polyimide sheet having a thickness of 38 ⁇ m.
  • composition (wt %) of the respective added components of the barrier layer is similarly shown in Table 1.
  • Comparative Example 6 As a result of performing the foregoing endurance test, although Comparative Example 6 lasted for 390 hours, it caused a short circuit in the wires thereafter. It has become clear that when the film thickness of the barrier layer is insufficient, diffusion of Cu to the polyimide sheet will occur, resulting in no durability.
  • a target was prepared with the same manufacturing method as Example 1, and, under the condition that the film thickness of the barrier layer is outside the range of the present invention as shown in Table 1, a Co—Cr barrier layer having a film thickness of 180 nm which is out of the range of the present invention (thicker than the present invention) was formed on a polyimide sheet having a thickness of 38 ⁇ m.
  • the present invention yields superior effects in that it is capable of obtaining sufficient barrier effects even in a fine wiring pitch, and has barrier characteristics that will not change even when the temperature increases due to heat treatment or the like. Accordingly, the present invention is effective as a barrier film for a flexible copper substrate since it possesses superior barrier characteristics against the diffusion of copper to a resin film such as polyimide.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
US11/573,167 2004-08-10 2005-07-25 Barrier Film For Flexible Copper Substrate And Sputtering Target For Forming Barrier Film Abandoned US20070209547A1 (en)

Applications Claiming Priority (3)

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JP2004232872 2004-08-10
JP2004-232872 2004-08-10
PCT/JP2005/013548 WO2006016473A1 (ja) 2004-08-10 2005-07-25 フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット

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EP (1) EP1785505B1 (de)
JP (1) JP4466925B2 (de)
CN (1) CN101001973B (de)
DE (1) DE602005016432D1 (de)
TW (1) TWI271440B (de)
WO (1) WO2006016473A1 (de)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050121320A1 (en) * 2002-01-30 2005-06-09 Takeo Okabe Copper alloy sputtering target and method for manufacturing the target
US20060088436A1 (en) * 2003-03-17 2006-04-27 Takeo Okabe Copper alloy sputtering target process for producing the same and semiconductor element wiring
US20070074790A1 (en) * 2003-10-24 2007-04-05 Nikko Materials Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
US20070187236A1 (en) * 2004-03-26 2007-08-16 Nippon Mining & Metals Co., Ltd. Co-cr-pt-b alloy sputtering target
US20090140430A1 (en) * 2002-11-21 2009-06-04 Nippon Mining & Metals Co., Ltd. Copper Alloy Sputtering Target and Semiconductor Element Wiring
US20090139859A1 (en) * 2005-06-15 2009-06-04 Nippon Mining & Metals Co., Ltd. Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder
US20100013096A1 (en) * 2006-10-03 2010-01-21 Nippon Mining & Metals Co., Ltd. Cu-Mn Alloy Sputtering Target and Semiconductor Wiring
US20100040873A1 (en) * 2006-11-29 2010-02-18 Nippon Mining & Metals Co., Ltd. Two-Layered Copper-Clad Laminate
US20100320084A1 (en) * 2008-03-28 2010-12-23 Nippon Mining And Metals Co., Ltd. Sputtering Target of Nonmagnetic-Particle-Dispersed Ferromagnetic Material
US20110132757A1 (en) * 2004-03-01 2011-06-09 Jx Nippon Mining & Metals Corporation Sputtering Target with Few Surface Defects, and Surface Processing Method Thereof
US20110162971A1 (en) * 2009-03-03 2011-07-07 Jx Nippon Mining & Metals Corporation Sputtering Target and Process for Producing Same
US8679268B2 (en) 2010-07-20 2014-03-25 Jx Nippon Mining & Metals Corporation Sputtering target of ferromagnetic material with low generation of particles
US9034155B2 (en) 2009-08-06 2015-05-19 Jx Nippon Mining & Metals Corporation Inorganic-particle-dispersed sputtering target
US9103023B2 (en) 2009-03-27 2015-08-11 Jx Nippon Mining & Metals Corporation Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
US9228251B2 (en) 2010-01-21 2016-01-05 Jx Nippon Mining & Metals Corporation Ferromagnetic material sputtering target
US9269389B2 (en) 2009-12-11 2016-02-23 Jx Nippon Mining & Metals Corporation Sputtering target of magnetic material
US9328412B2 (en) 2010-08-31 2016-05-03 Jx Nippon Mining & Metals Corporation Fe—Pt-based ferromagnetic material sputtering target
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US20180147815A1 (en) * 2015-06-04 2018-05-31 Sumitomo Electric Industries, Ltd. Substrate for printed circuit board and printed circuit board

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101203439B1 (ko) * 2007-12-21 2012-11-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 프린트 배선판용 동박
JP5373453B2 (ja) * 2009-03-31 2013-12-18 Ｊｘ日鉱日石金属株式会社 プリント配線板用銅箔
CN102021365A (zh) * 2010-12-30 2011-04-20 许正诚 一种钴铬合金
CN102424940A (zh) * 2011-12-20 2012-04-25 宁波江丰电子材料有限公司 高纯钴靶材的制备方法
US11769729B2 (en) * 2018-06-21 2023-09-26 Intel Corporation Metal structures, devices, and methods

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4832810A (en) * 1986-07-08 1989-05-23 Nihon Shinku Gijutsu Kabushiki Kaisha Co-based alloy sputter target and process of manufacturing the same
US5352501A (en) * 1989-12-27 1994-10-04 Mitsubishi Kasei Corporation Longitudinal magnetic recording medium comprising a circumterentially textured disk substrate, chromium primer layer and a cobalt chromium magnetic alloy layer having a segregation structure
US5434014A (en) * 1989-07-10 1995-07-18 Kabushiki Kaisha Toshiba Magnetic recording medium and method of manufacturing same
US5492745A (en) * 1989-04-04 1996-02-20 Mitsubishi Chemical Corporation Magnetic recording medium and method for its production
US5512150A (en) * 1995-03-09 1996-04-30 Hmt Technology Corporation Target assembly having inner and outer targets
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US6123783A (en) * 1997-02-06 2000-09-26 Heraeus, Inc. Magnetic data-storage targets and methods for preparation
US6372104B1 (en) * 1995-03-10 2002-04-16 Leybold Materials Gmbh Cobalt base alloy sputtering target with high magnetic field penetration

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS619821A (ja) * 1984-06-23 1986-01-17 Matsushita Electric Ind Co Ltd 磁気記録媒体
US4518627A (en) * 1984-09-04 1985-05-21 Polaroid Corporation Apparatus and method for disorienting magnetic particles in magnetic recording media
US4803577A (en) * 1985-06-12 1989-02-07 Tdk Corporation Vertical magnetic recording system using rigid disk
JPS62222437A (ja) * 1986-03-20 1987-09-30 Sanyo Electric Co Ltd 垂直記録媒体の製造方法
JPS62263803A (ja) 1986-05-09 1987-11-16 Kobe Steel Ltd Ｃｏ−Ｃｒスパツタリングタ−ゲツトの製造方法
DE3631011A1 (de) * 1986-09-12 1988-03-24 Bayer Ag Flexible schaltungen
JPH04276070A (ja) * 1991-03-04 1992-10-01 Daido Steel Co Ltd マグネトロンスパッタリング用ターゲット
US5401572A (en) * 1991-06-27 1995-03-28 Sony Corporation Magnetic recording medium and magnetic recording method for digital image signal
TW230290B (de) * 1991-11-15 1994-09-11 Nikko Guruder Foreer Kk
JPH05283848A (ja) * 1992-04-01 1993-10-29 Toyo Metaraijingu Kk フレキシブルプリント配線板
JPH0636257A (ja) * 1992-07-17 1994-02-10 Sony Corp 垂直磁気記録媒体及びその製造方法
US5552234A (en) * 1993-03-29 1996-09-03 Japan Energy Corporation Copper foil for printed circuits
US5723198A (en) * 1993-06-11 1998-03-03 Hitachi, Ltd. Multi-layered magnetic recording medium and magnetic recording system employing the same
BE1007535A3 (nl) * 1993-09-24 1995-07-25 Innovative Sputtering Tech Gelaagde metaalstructuur.
KR0144956B1 (ko) * 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
JPH108243A (ja) 1996-06-24 1998-01-13 Sanyo Special Steel Co Ltd 磁気記録媒体用低透磁率スパッタリングＣｏ系ターゲット材の製造方法
JP2000096220A (ja) * 1998-09-21 2000-04-04 Hitachi Metals Ltd ＣｏＣｒ系スパッタリングターゲットおよびその製造方法
US6599377B2 (en) * 1999-10-01 2003-07-29 Heraeus, Inc. Wrought processing of brittle target alloy for sputtering applications
JP3258308B2 (ja) * 2000-02-03 2002-02-18 株式会社日鉱マテリアルズ レーザー穴開け性に優れた銅箔及びその製造方法
US20020182432A1 (en) * 2000-04-05 2002-12-05 Masaru Sakamoto Laser hole drilling copper foil
JP3628585B2 (ja) * 2000-04-05 2005-03-16 株式会社日鉱マテリアルズ 銅張り積層板及び銅張り積層板のレーザーによる穴開け方法
JP2002252257A (ja) * 2000-12-18 2002-09-06 Mitsui Mining & Smelting Co Ltd 半導体キャリア用フィルム及びその製造方法
JP2002208125A (ja) 2001-01-05 2002-07-26 Hitachi Metals Ltd Ｃｏ−Ｃｒ−Ｐｔ系ターゲット材および磁気記録媒体
JP2002280684A (ja) * 2001-03-16 2002-09-27 Sumitomo Electric Printed Circuit Inc フレキシブル銅張回路基板とその製造方法
JP4006618B2 (ja) * 2001-09-26 2007-11-14 日鉱金属株式会社 キャリア付銅箔の製法及びキャリア付銅箔を使用したプリント基板
JP4298943B2 (ja) * 2001-10-18 2009-07-22 日鉱金属株式会社 銅箔表面処理剤
JP4379854B2 (ja) * 2001-10-30 2009-12-09 日鉱金属株式会社 表面処理銅箔
JP3944027B2 (ja) * 2001-11-16 2007-07-11 三井金属鉱業株式会社 フレキシブルプリント配線板の製造方法及びその製造方法で得られたフレキシブルプリント配線板
CN100515167C (zh) * 2004-02-17 2009-07-15 日矿金属株式会社 具有黑化处理表面或层的铜箔
KR20060127267A (ko) * 2004-03-26 2006-12-11 닛코킨조쿠 가부시키가이샤 코발트-크롬-백금-붕소계 합금 스퍼터링 타겟트
US7364666B2 (en) * 2004-12-21 2008-04-29 3M Innovative Properties Company Flexible circuits and method of making same
EP1895024A4 (de) * 2005-06-23 2009-12-23 Nippon Mining Co Kupferfolie für leiterplatte

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4832810A (en) * 1986-07-08 1989-05-23 Nihon Shinku Gijutsu Kabushiki Kaisha Co-based alloy sputter target and process of manufacturing the same
US5492745A (en) * 1989-04-04 1996-02-20 Mitsubishi Chemical Corporation Magnetic recording medium and method for its production
US5434014A (en) * 1989-07-10 1995-07-18 Kabushiki Kaisha Toshiba Magnetic recording medium and method of manufacturing same
US5352501A (en) * 1989-12-27 1994-10-04 Mitsubishi Kasei Corporation Longitudinal magnetic recording medium comprising a circumterentially textured disk substrate, chromium primer layer and a cobalt chromium magnetic alloy layer having a segregation structure
US5512150A (en) * 1995-03-09 1996-04-30 Hmt Technology Corporation Target assembly having inner and outer targets
US6372104B1 (en) * 1995-03-10 2002-04-16 Leybold Materials Gmbh Cobalt base alloy sputtering target with high magnetic field penetration
US6073830A (en) * 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US6123783A (en) * 1997-02-06 2000-09-26 Heraeus, Inc. Magnetic data-storage targets and methods for preparation
US6432223B1 (en) * 1997-02-06 2002-08-13 Heraeus Inc. Magnetic data-storage targets and method for preparation

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9896745B2 (en) 2002-01-30 2018-02-20 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target and method for manufacturing the target
US20050121320A1 (en) * 2002-01-30 2005-06-09 Takeo Okabe Copper alloy sputtering target and method for manufacturing the target
US20090139863A1 (en) * 2002-11-21 2009-06-04 Nippon Mining & Metals Co., Ltd. Copper Alloy Sputtering Target and Semiconductor Element Wiring
US10665462B2 (en) 2002-11-21 2020-05-26 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target and semiconductor element wiring
US8246764B2 (en) 2002-11-21 2012-08-21 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target and semiconductor element wiring
US20090140430A1 (en) * 2002-11-21 2009-06-04 Nippon Mining & Metals Co., Ltd. Copper Alloy Sputtering Target and Semiconductor Element Wiring
US9765425B2 (en) 2003-03-17 2017-09-19 Jx Nippon Mining & Metals Corporation Copper alloy sputtering target, process for producing the same and semiconductor element wiring
US7740721B2 (en) 2003-03-17 2010-06-22 Nippon Mining & Metals Co., Ltd Copper alloy sputtering target process for producing the same and semiconductor element wiring
US20100219070A1 (en) * 2003-03-17 2010-09-02 Nippon Mining & Metals Co., Ltd. Copper Alloy Sputtering Target, Process for Producing the Same and Semiconductor Element Wiring
US20060088436A1 (en) * 2003-03-17 2006-04-27 Takeo Okabe Copper alloy sputtering target process for producing the same and semiconductor element wiring
US7605481B2 (en) 2003-10-24 2009-10-20 Nippon Mining & Metals Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
US20070074790A1 (en) * 2003-10-24 2007-04-05 Nikko Materials Co., Ltd. Nickel alloy sputtering target and nickel alloy thin film
US20110132757A1 (en) * 2004-03-01 2011-06-09 Jx Nippon Mining & Metals Corporation Sputtering Target with Few Surface Defects, and Surface Processing Method Thereof
US8663402B2 (en) 2004-03-01 2014-03-04 Jx Nippon Mining & Metals Corporation Sputtering target with few surface defects, and surface processing method thereof
US7927434B2 (en) 2004-03-26 2011-04-19 Jx Nippon Mining & Metals Corporation Co-Cr-Pt-B alloy sputtering target
US20070187236A1 (en) * 2004-03-26 2007-08-16 Nippon Mining & Metals Co., Ltd. Co-cr-pt-b alloy sputtering target
US8877021B2 (en) 2005-06-15 2014-11-04 Jx Nippon Mining & Metals Corporation Chromic oxide powder for sputtering target, and sputtering target manufactured from such chromic oxide powder
US20090139859A1 (en) * 2005-06-15 2009-06-04 Nippon Mining & Metals Co., Ltd. Chromic Oxide Powder for Sputtering Target, and Sputtering Target Manufactured from such Chromic Oxide Powder
US20100013096A1 (en) * 2006-10-03 2010-01-21 Nippon Mining & Metals Co., Ltd. Cu-Mn Alloy Sputtering Target and Semiconductor Wiring
US20100040873A1 (en) * 2006-11-29 2010-02-18 Nippon Mining & Metals Co., Ltd. Two-Layered Copper-Clad Laminate
US8568576B2 (en) 2008-03-28 2013-10-29 Jx Nippon Mining & Metals Corporation Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material
US8932444B2 (en) 2008-03-28 2015-01-13 Jx Nippon Mining & Metals Corporation Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material
US8936707B2 (en) 2008-03-28 2015-01-20 Jx Nippon Mining & Metals Corporation Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material
US20100320084A1 (en) * 2008-03-28 2010-12-23 Nippon Mining And Metals Co., Ltd. Sputtering Target of Nonmagnetic-Particle-Dispersed Ferromagnetic Material
US20110162971A1 (en) * 2009-03-03 2011-07-07 Jx Nippon Mining & Metals Corporation Sputtering Target and Process for Producing Same
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US9605339B2 (en) 2010-12-21 2017-03-28 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film and process for production thereof
US20180147815A1 (en) * 2015-06-04 2018-05-31 Sumitomo Electric Industries, Ltd. Substrate for printed circuit board and printed circuit board
US10596782B2 (en) * 2015-06-04 2020-03-24 Sumitomo Electric Industries, Ltd. Substrate for printed circuit board and printed circuit board

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EP1785505A4 (de) 2008-03-19
JP4466925B2 (ja) 2010-05-26
CN101001973A (zh) 2007-07-18
EP1785505B1 (de) 2009-09-02
TW200606263A (en) 2006-02-16
US20100089622A1 (en) 2010-04-15
DE602005016432D1 (de) 2009-10-15
EP1785505A1 (de) 2007-05-16
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US8318314B2 (en) 2012-11-27
CN101001973B (zh) 2010-07-14
JPWO2006016473A1 (ja) 2008-05-01

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