US20060152955A1 - Pulse power supply for regenerating magnetic energy - Google Patents

Pulse power supply for regenerating magnetic energy Download PDF

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Publication number
US20060152955A1
US20060152955A1 US10/524,893 US52489303A US2006152955A1 US 20060152955 A1 US20060152955 A1 US 20060152955A1 US 52489303 A US52489303 A US 52489303A US 2006152955 A1 US2006152955 A1 US 2006152955A1
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United States
Prior art keywords
inverse
semiconductor switches
power supply
current
conductive semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/524,893
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English (en)
Inventor
Ryuichi Shimada
Taku Takaku
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Merstech Inc
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Individual
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Filing date
Publication date
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Assigned to CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING, THE reassignment CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING, THE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SHIMADA, RYUICHI, TAKAKU, TAKU
Publication of US20060152955A1 publication Critical patent/US20060152955A1/en
Assigned to MERSTECH INC. reassignment MERSTECH INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: THE CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING
Priority to US12/838,728 priority Critical patent/US7898113B2/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/66Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal
    • H02M7/68Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters
    • H02M7/72Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/79Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/797Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/1555Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only for the generation of a regulated current to a load whose impedance is substantially inductive
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption

Definitions

  • the present invention relates to a pulse power supply device for supplying pulse current to an inductive load.
  • pulse power supply devices in which normally an energy source capacitor charged with high voltage is connected to the load by using switches such as an ignitron, a discharge gap switch and a thyristor so that a capacitor discharge is started, are generally used.
  • diodes called clamp circuits are generally connected to loads in parallel or to capacitors in parallel. After the electric current becomes maximum, a capacitor voltage is inverted and simultaneously the diodes are turned on, and the load current reflows to the diodes. As a result, reverse charging of the capacitor is prevented, and the clamped electric current continuously flows while being attenuated with time constant L/R due to electric resistance of the load.
  • Pulse high-magnetic field bending magnets of compact medical synchrotron accelerators and the like do not use the maximum magnetic field but require an operation such that the magnetic field is raised with time. For this reason, it is demanded that the electric current is attenuated quickly and a pulse rate is heightened. Further, gas excitation laser power supply requires high speed rise of a voltage and high repetition, and thus high repetition control is required as discharge power supply.
  • switches are switched from those only for ON control such as an ignitron, a discharge gap switch and a thyristor to semiconductor switches having self arc-suppressing ability using a gate signal such as a GTO thyristor and an IGBT (Insulated-gate Bipolar Transistor).
  • FIG. 2 is a diagram explaining a basic operation of the present invention.
  • a power supply side has a constitution of a current switch of a snubber energy regenerating system.
  • a capacitor which temporarily stores snubber energy corresponds to an energy source capacitor of the present invention.
  • the current switch of the snubber energy regenerating system is disclosed in Japanese Patent Application Laid-Open No. 2000-358359 “FORWARD AND BACKWARD DIRECTION CURRENT SWITCH FOR REGENERATING SNUBBER ENERGY” (Patent Document 1).
  • the present invention utilizes the constitution of the above-mentioned current switch for regenerating the snubber energy, but the Patent Document 1 describes the current switch for temporarily storing magnetic energy of a breaking current circuit into a snubber capacitor and discharging it into a load at the time of next energizing.
  • the present invention is different from the invention in the Patent Document 1 in that the energy source capacitor is charged with full energy, and the load is driven only by the energy, and further, when the pulse is ended, the magnetic energy remaining in the load is regenerated to the energy source capacitor.
  • a load is an inductive load and is represented by a resistor R and an inductance L.
  • the load is a discharge electrode, and in the case of an accelerator bending magnet, the load is a dipole coil which is transformer-coupled. In both cases, the load is regarded as a load where L and R are connected in series.
  • FIG. 2 An operating sequence of FIG. 2 is explained with reference to FIG. 3 .
  • a capacitor 1 is charged so as to have polarity of FIG. 2 (a charging circuit is not shown), and when switches S 1 and S 2 are turned on, electric charges of the capacitor start to flow to the load.
  • the load current ref lows via the diode and is brought into a freewheeling state, and the load current continues to flow in two parallel lines in a direction where “a path where a main current flows” is written.
  • the characteristics of the switch constitution and the operation are that the electric current in the freewheeling state continuously flows in two parallel lines. As a result, a current carrying capacity of the switches is only half, and thus this example is economical.
  • FIG. 4 is a principle diagram for developing the present invention in both directions of the electric current.
  • a difference of this drawing from FIG. 2 is that four units where diodes and switches are connected in parallel are installed in inverse-series and in inverse-parallel as shown in FIG. 4 , so that a bidirectional electric current is allowed to flow in the load.
  • the same point is that when the switches are turned off, the magnetic energy is regenerated to the capacitor 1 (as in FIG. 2 , the charging circuit is not shown).
  • selection from an operating switch group is brought into a “cross state”, namely, the switches S 1 and S 2 are turned on in a current forward direction and the switches S 3 and S 4 are turned on in a current backward direction.
  • “A pair of the switches are selected in the cross state” means that when the four switches are arranged into a quadrangular shape, two of them positioned on a diagonal line are selected.
  • a rational design is made preferably in a manner that the switches and capacities of the diodes according to a level of the maximum electric current in the forward and backward directions are selected.
  • FIG. 5 is a diagram illustrating a simulation circuit showing that the energy source capacitor 1 can be replenished with energy by a low-voltage large-current power supply 5 inserted into the discharge circuit, and a waveform as its result.
  • the capacitor voltage and the load current rise according to the number of discharges, but this is because when a voltage which is not less than a voltage of a DC resistance is injected from an external power supply, the discharge current rises.
  • the value of the pulse current can be controlled.
  • FIG. 1 is a diagram explaining an embodiment of the present invention
  • FIG. 2 is a diagram explaining a basic principle of the present invention
  • FIG. 3 is a diagram explaining a sequence of an electric current, a voltage and switches in FIG. 2 ;
  • FIG. 4 is a diagram explaining a basic principle of bidirectional current of the present invention.
  • FIG. 5 is a model diagram of a calculator simulation for analyzing a basic principle of a method of supporting a capacitor voltage, and a simulation waveform of a load current and the capacitor voltage of the present invention.
  • FIG. 1 is a circuit diagram illustrating an embodiment of the present invention.
  • a difference of FIG. 1 from FIG. 4 is that when an accelerator bending magnet 6 as a concrete example of a load is excited by a pulse current via a current transformer 3 , four power MOSFETs are connected in inverse-series and in inverse-parallel. As a result, the four power MOSFETs compose a bridge circuit.
  • power MOSFETs used here are made of silicon carbide (SiC), and are quickly turned on/off with high withstand voltage, have less conducting loss, and can effectively utilize body diodes (also called parasitic diodes) as a substitution of parallel diodes.
  • a switch which prevents an electric current from flowing in a forward direction when the switches are off but conducts in a backward direction, is called an inverse-conductive type semiconductor switch.
  • Its examples are the power MOSFET, the inverse-conductive type GTO thyristor, and the unit in which the diodes are connected to the semiconductor switches such as IGBT and the like in parallel.
  • a gate signal is supplied to the power MOSFET switches G 1 to G 4 from a control device 7 shown in FIG. 1 .
  • a pair of the switches G 1 and G 2 are selected “in a cross state” so that a direction of the electric current is a forward direction, and when a pair of the switches G 3 and G 4 are selected, the direction of the electric current is the backward direction. This is necessary for enabling a flow of a magnetization reset current for improving an exciting property of a current transformer for pulse operation of a compact medical accelerator bending magnet.
  • a low-voltage large-current power supply 5 is inserted between an inductive load 6 and the switch 2 , and when its voltage is applied to a discharge current in series, energy can be replenished at every discharge. Further, at the first time, the low-voltage large-current power supply 5 allows an electric current 4 in the circuit, and by cutting off the electric current 4 by the current switch 2 , the capacitor 1 can be charged like a snubber capacitor, and thus a pulse current for high-speed boot can be obtained only by the low-voltage power supply without preparing a separate high-voltage power supply for charging the capacitor. Needless to say, a general method of connecting a charging power supply to the capacitor 1 so as to charge the capacitor is effective.
  • the gate signals of bidirectional current switches having a bridge constitution composed of four semiconductor switches connected to diodes in parallel as the switch of the energy source capacitor for generating an electric current are controlled, so that the electric current to the inductive load can be started, maintained and stopped at a high speed.
  • the electric current is reduced, the magnetic energy is regenerated with the same polarity as that of the capacitor.
  • the charging voltage of the capacitor can be increased or decreased while a discharge cycle is being repeated.
  • a total capacity of the four switch elements may be basically half, and further when it is considered that a pulse conductive current flows in two arms in parallel, the total capacity is half. For this reason, the present invention can be applied basically without increasing voltage-current capacity in comparison with conventional pulse power supply.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Generation Of Surge Voltage And Current (AREA)
  • Power Conversion In General (AREA)
  • Magnetic Treatment Devices (AREA)
  • Dc-Dc Converters (AREA)
US10/524,893 2002-08-19 2003-08-18 Pulse power supply for regenerating magnetic energy Abandoned US20060152955A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/838,728 US7898113B2 (en) 2002-08-19 2010-07-19 Pulse power supply device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-278148 2002-08-19
JP2002278148 2002-08-19
PCT/JP2003/010414 WO2004017151A1 (ja) 2002-08-19 2003-08-18 磁気エネルギーを回生するパルス電源装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/010414 A-371-Of-International WO2004017151A1 (ja) 2002-08-19 2003-08-18 磁気エネルギーを回生するパルス電源装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/388,491 Continuation US7919887B2 (en) 2002-08-19 2009-02-18 High repetitous pulse generation and energy recovery system

Publications (1)

Publication Number Publication Date
US20060152955A1 true US20060152955A1 (en) 2006-07-13

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Family Applications (3)

Application Number Title Priority Date Filing Date
US10/524,893 Abandoned US20060152955A1 (en) 2002-08-19 2003-08-18 Pulse power supply for regenerating magnetic energy
US12/388,491 Expired - Fee Related US7919887B2 (en) 2002-08-19 2009-02-18 High repetitous pulse generation and energy recovery system
US12/838,728 Expired - Fee Related US7898113B2 (en) 2002-08-19 2010-07-19 Pulse power supply device

Family Applications After (2)

Application Number Title Priority Date Filing Date
US12/388,491 Expired - Fee Related US7919887B2 (en) 2002-08-19 2009-02-18 High repetitous pulse generation and energy recovery system
US12/838,728 Expired - Fee Related US7898113B2 (en) 2002-08-19 2010-07-19 Pulse power supply device

Country Status (7)

Country Link
US (3) US20060152955A1 (de)
EP (1) EP1553475B1 (de)
JP (1) JP4382665B2 (de)
AT (1) ATE492839T1 (de)
AU (1) AU2003257861A1 (de)
DE (1) DE60335479D1 (de)
WO (1) WO2004017151A1 (de)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
US20100214710A1 (en) * 2009-02-23 2010-08-26 Mitsubishi Electric Corporation Semiconductor device measuring voltage applied to semiconductor switch element
US8395347B2 (en) 2009-03-30 2013-03-12 Ryuichi Shimada Induction motor control device and induction motor group control system
CN109728627A (zh) * 2019-01-04 2019-05-07 三峡大学 一种实现电磁成形系统长寿命的电路结构及其方法
CN114035647A (zh) * 2021-11-23 2022-02-11 哈尔滨工业大学 一种用于产生扰动磁场的脉冲功率装置

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JP4858937B2 (ja) 2004-11-12 2012-01-18 富士電機株式会社 発電電力の系統連系装置
JP4406733B2 (ja) * 2006-10-05 2010-02-03 国立大学法人東京工業大学 インバータ電源装置
JP4900944B2 (ja) * 2007-01-15 2012-03-21 富士電機株式会社 電力変換装置および電力変換用の半導体装置
JP4441691B2 (ja) 2007-02-06 2010-03-31 国立大学法人東京工業大学 交流/直流電力変換装置
US20100259955A1 (en) * 2007-12-11 2010-10-14 Tokyo Institute Of Technology Soft switching power converter
CA2751225A1 (en) * 2008-02-08 2009-08-13 Restech Limited Electromagnetic field energy recycling
GB2467551B (en) * 2009-02-05 2011-05-18 Restech Ltd Electromagnetic field energy recycling
JP5159355B2 (ja) * 2008-02-12 2013-03-06 三菱電機株式会社 レーザ電源装置
CN101971474A (zh) * 2008-02-20 2011-02-09 莫斯科技株式会社 具有保护电路的磁能再生开关
WO2010038303A1 (ja) * 2008-10-02 2010-04-08 株式会社MERSTech 情報提供システム
WO2011016734A1 (en) * 2009-08-05 2011-02-10 Restech Limited Electromagnetic field energy recycling
JP5860458B2 (ja) 2011-06-02 2016-02-16 株式会社アドバンテスト ワイヤレス受電装置、ワイヤレス給電装置およびワイヤレス給電システム、自動チューニング補助回路
GB201110644D0 (en) 2011-06-23 2011-08-10 Univ Aberdeen Converter
JP5831275B2 (ja) * 2012-02-10 2015-12-09 日産自動車株式会社 電力変換装置及びその駆動方法
CN103490425B (zh) * 2013-09-18 2015-08-26 华南理工大学 一种异步发电机组并联运行稳压系统及方法
JP6338382B2 (ja) * 2014-01-11 2018-06-06 株式会社クラレンドン研究所 コンデンサバンク
JP6565244B2 (ja) * 2015-03-20 2019-08-28 富士電機株式会社 イグナイタ用半導体装置、イグナイタシステム及び点火コイルユニット
EP3410593B1 (de) * 2016-01-29 2022-05-25 Mitsubishi Electric Corporation Leistungswandler
RU2703966C1 (ru) * 2016-05-04 2019-10-22 Закрытое Акционерное Общество "Драйв" Устройство для получения высоковольтного импульсного напряжения
JP7235374B1 (ja) * 2022-12-23 2023-03-08 株式会社ニッシン パルス電源装置、誘電体バリア放電装置、および誘導加熱装置

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100214710A1 (en) * 2009-02-23 2010-08-26 Mitsubishi Electric Corporation Semiconductor device measuring voltage applied to semiconductor switch element
US8395347B2 (en) 2009-03-30 2013-03-12 Ryuichi Shimada Induction motor control device and induction motor group control system
CN109728627A (zh) * 2019-01-04 2019-05-07 三峡大学 一种实现电磁成形系统长寿命的电路结构及其方法
CN114035647A (zh) * 2021-11-23 2022-02-11 哈尔滨工业大学 一种用于产生扰动磁场的脉冲功率装置

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US20090146504A1 (en) 2009-06-11
WO2004017151A1 (ja) 2004-02-26
DE60335479D1 (de) 2011-02-03
EP1553475A1 (de) 2005-07-13
US7898113B2 (en) 2011-03-01
AU2003257861A1 (en) 2004-03-03
US20100277138A1 (en) 2010-11-04
EP1553475A4 (de) 2008-07-02
ATE492839T1 (de) 2011-01-15
US7919887B2 (en) 2011-04-05
EP1553475B1 (de) 2010-12-22
JPWO2004017151A1 (ja) 2005-12-08
JP4382665B2 (ja) 2009-12-16

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