US20040061200A1 - Semiconductor wafer and manufacturing method thereof - Google Patents

Semiconductor wafer and manufacturing method thereof Download PDF

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Publication number
US20040061200A1
US20040061200A1 US10/461,352 US46135203A US2004061200A1 US 20040061200 A1 US20040061200 A1 US 20040061200A1 US 46135203 A US46135203 A US 46135203A US 2004061200 A1 US2004061200 A1 US 2004061200A1
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semiconductor wafer
wafer
semiconductor
wafers
soi layer
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Toshiaki Iwamatsu
Shigenobu Maeda
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Renesas Technology Corp
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Renesas Technology Corp
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Assigned to RENESAS TECHNOLOGY CORP. reassignment RENESAS TECHNOLOGY CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IWAMATSU, TOSHIAKI, MAEDA, SHIGENOBU
Publication of US20040061200A1 publication Critical patent/US20040061200A1/en
Priority to US11/223,970 priority Critical patent/US7291542B2/en
Priority to US11/868,143 priority patent/US20080032486A1/en
Priority to US11/868,168 priority patent/US20080032487A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02027—Setting crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a semiconductor wafer and a manufacturing method thereof.
  • an oxide film layer resides on one main surface of a supporting substrate wafer made of, e.g. a silicon substrate, and an SOI layer resides on the top surface of the oxide film layer.
  • a supporting substrate wafer made of, e.g. a silicon substrate
  • SOI layer resides on the top surface of the oxide film layer.
  • Such SOI and oxide film layers are formed by bonding to the supporting substrate wafer an SOI layer wafer that has a silicon substrate with an oxide film formed on its main surface and then removing part of it.
  • MOS Metal Oxide Semiconductor
  • a MOS transistor When a MOS (Metal Oxide Semiconductor) transistor is formed in the SOI layer, it is arranged so that its channel direction is parallel to a ⁇ 100> crystal direction of the SOI layer, for example. It is known that arranging the channel direction in parallel with ⁇ 100> crystal direction enhances the current driving capability of the P-channel MOS transistor by about 15 percent and also reduces the short-channel effect.
  • the SOI layer wafer in which SOI and oxide film layers are formed, may be bonded to the supporting substrate wafer with their crystal directions shifted at 45° (or 135°) with respect to each other.
  • the two wafers are bonded together in such a way that a ⁇ 100> crystal direction of the SOI layer and a ⁇ 110> crystal direction of the supporting substrate wafer coincide with each other. The reason is shown below.
  • (100) wafers cleave along ⁇ 110 ⁇ crystal planes. Accordingly, when the SOI layer wafer and the supporting substrate wafer are bonded together so that the ⁇ 100> crystal direction of the former coincides with the ⁇ 110> crystal direction of the latter, the wafer can be cleaved, for experiments and studies, along ⁇ 110 ⁇ cleavage planes of the supporting substrate wafer 1 that forms a large part of the wafer thickness. On the other hand, in the SOI layer whose crystal direction is shifted, an MOS transistor can be formed so that its channel direction is parallel with a ⁇ 100> crystal direction.
  • the supporting substrate wafer 1 breaks along ⁇ 110> crystal direction, while the SOI layer breaks along ⁇ 100> crystal direction.
  • bonding the two wafers with their crystal directions shifted from each other provides the advantage that a section along the MOS transistor channel direction can be easily exposed.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2002-134374,
  • Patent Document 2 Japanese Patent Application Laid-Open No. 9-153603 (1997), and
  • Non-Patent Publication 1 G. Scott et al., “NMOS Drive Current Reduction Caused by Transistor Layout and Trench Isolation Induced Stress,” (US), IEDM, 1999.
  • a conventional SOI wafer is manufactured by a method shown below, for example.
  • an SOI layer wafer and a supporting substrate wafer are prepared, both of which are a (100) wafer having a (100) plane as a main surface.
  • a notch or an orientation flat
  • a notch or an orientation flat
  • a notch or an orientation flat
  • the two substrates are bonded together in such a way that the ⁇ 100> crystal direction of the SOI layer and the ⁇ 110> crystal direction of the supporting substrate wafer coincide with each other.
  • the two wafers are bonded so that the notch of the supporting substrate wafer and the notch of the SOI layer wafer coincide with each other.
  • the SOI layer ⁇ 100> crystal direction and the supporting substrate wafer ⁇ 110> crystal direction may not be precisely aligned.
  • MOS transistor channel direction cannot be precisely aligned with the SOI layer ⁇ 100> crystal direction and a deviation is caused between the two. This is because MOS transistors are formed on the basis of the position of the supporting substrate wafer.
  • an object of the present invention is to provide a semiconductor wafer and a manufacturing method thereof in which the current driving capability of a MOS transistor can be sufficiently enhanced.
  • a semiconductor wafer includes a first semiconductor wafer and a second semiconductor wafer.
  • the first semiconductor wafer has a plurality of cuts formed at edge portions in crystal directions
  • the second semiconductor wafer has a cut formed at an edge portion in a crystal direction.
  • One of the plurality of cuts of the first semiconductor wafer and the cut of the second semiconductor wafer are formed in different crystal directions.
  • the first and second semiconductor wafers are bonded to each other with said one of the plurality of cuts of the first semiconductor wafer and the cut of the second semiconductor wafer coinciding with each other.
  • the first semiconductor wafer has a plurality of cuts and the first and second semiconductor wafers are bonded together in such a way that one of the plurality of cuts of the first semiconductor wafer and the cut of the second semiconductor wafer coincide with each other. That one of the plurality of cuts of the first semiconductor wafer and the cut of the second semiconductor wafer are positioned in different crystal directions.
  • another cut of the first semiconductor wafer can be engaged with a guide portion of the semiconductor wafer manufacturing apparatus to prevent positioning error due to relative turn between the wafers. This allows the two wafers to be highly precisely positioned.
  • the semiconductor wafer can be easily cleaved so that a section along MOS transistor channel direction is exposed, and a MOS transistor having a remarkably enhanced current driving capability can be formed on the semiconductor wafer.
  • a semiconductor wafer manufacturing method includes the following steps (a) to (d).
  • first and second semiconductor wafers are prepared.
  • a main surface of the second semiconductor wafer is bonded to a main surface of the first semiconductor wafer.
  • oxygen ions are implanted from the first semiconductor wafer side into a neighborhood of a part where the first and second semiconductor wafer are bonded to each other.
  • the portion implanted with the oxygen ions is formed into an oxide film layer by a thermal treatment.
  • the first and second semiconductor wafers are bonded together, oxygen ions are implanted and the oxygen-ion-implanted portion is processed into an oxide film layer through a thermal treatment.
  • oxygen ions are implanted and the oxygen-ion-implanted portion is processed into an oxide film layer through a thermal treatment.
  • the oxide film layer by oxygen ion implantation and thermal process provides an SOI wafer with reduced SOI layer thickness nonuniformity.
  • the reduced SOI layer thickness nonuniformity enhances the current driving capability.
  • the semiconductor wafer can be easily cleaved so that a section along the MOS transistor channel direction is exposed, and an MOS transistor having a remarkably enhanced current driving capability can be formed on the semiconductor wafer.
  • a semiconductor wafer manufacturing method includes the steps (a) to (e).
  • a first semiconductor wafer having a plurality of cuts formed at edge portions in crystal directions is prepared.
  • a second semiconductor wafer having a cut formed at an edge portion in a crystal direction that is different from the crystal direction of one of the plurality of cuts of the first semiconductor wafer is prepared.
  • the first and second semiconductor wafers are bonded to each other while using said one of the plurality of cuts of the first semiconductor wafer and the cut of the second semiconductor wafer in order to position the first and second semiconductor wafers, with another one of the plurality of cuts of the first semiconductor wafer being engaged with a guide portion of a semiconductor wafer manufacturing apparatus.
  • oxygen ions are implanted from the first semiconductor wafer side into a neighborhood of a part where the first and second semiconductor wafers are bonded to each other.
  • the portion implanted with the oxygen ions is formed into an oxide film layer by a thermal treatment.
  • the oxygen ions are implanted and the oxygen-ion-implanted portion is processed into an oxide film layer through a thermal treatment. Accordingly, by bonding together the first and second semiconductor wafers in crystal directions shifted from each other, it is possible to form an SOI wafer that includes an SOI layer and a supporting substrate having crystal directions shifted with respect to each other. Furthermore, forming the oxide film layer by oxygen ion implantation and thermal process provides an SOI wafer with reduced SOI layer thickness nonuniformity. The reduced SOI layer thickness nonuniformity enhances the current driving capability.
  • the semiconductor wafer can be easily cleaved so that a section along MOS transistor channel direction is exposed, and a MOS transistor having a remarkably enhanced current driving capability can be formed on the semiconductor wafer.
  • the first and second semiconductor wafers are bonded together with another one of the plurality of cuts of the first semiconductor wafer engaged with a guide portion of the semiconductor wafer manufacturing apparatus. This prevents positioning error due to relative turn between the wafers.
  • the two wafers can be highly precisely positioned and a MOS transistor with a sufficiently enhanced current driving capability can be formed on the semiconductor wafer with the two wafers bonded in different crystal directions with respect to each other. Furthermore, electric characteristic variations are less likely to occur among MOS transistors formed on different semiconductor wafers.
  • FIG. 1 is the top view of a semiconductor wafer according to a first preferred embodiment
  • FIG. 2 is a cross-sectional view of the semiconductor wafer of the first preferred embodiment
  • FIGS. 3 to 5 are cross-sectional views showing a bonding process for forming the semiconductor wafer of the first preferred embodiment
  • FIG. 6 is the top view of a semiconductor wafer manufacturing apparatus that is used in the semiconductor wafer bonding process of the first preferred embodiment
  • FIG. 7 is a cross-sectional view of the semiconductor wafer manufacturing apparatus used in the semiconductor wafer bonding process of the first preferred embodiment
  • FIG. 8 is a diagram depicting the semiconductor wafer bonding process of the first preferred embodiment.
  • FIGS. 9 to 11 are cross-sectional views showing a semiconductor wafer manufacturing method according to a second preferred embodiment.
  • FIG. 1 is the top view of a semiconductor wafer according to this preferred embodiment.
  • This semiconductor wafer 100 is a (100) wafer that has a (100) plane as its main surface (in FIG. 1, the circle containing a point inside represents an arrow that shows the normal direction to the (100) plane.
  • FIG. 2 shows the II-II section of FIG. 1.
  • the SOI wafer 100 includes a supporting substrate wafer 1 formed of, e.g. a silicon substrate, an oxide film layer 2 resides on one main surface of the supporting substrate wafer 1 , and an SOI layer 32 resides on top of the oxide film layer 2 .
  • This SOI layer 32 and the oxide film layer 2 are formed by bonding to the supporting substrate wafer 1 an SOI layer wafer that has a silicon substrate and an oxide film formed on its main surface and then removing part of it. While the SOI layer 32 and oxide film layer 2 and the supporting substrate wafer 1 generally have approximately the same diameter, their diameters may be somewhat different from each other depending on the manufacturing process.
  • MOS transistor TR 1 of FIG. 1 is an example of such a semiconductor device.
  • S denotes its source
  • D denotes its drain
  • G denotes its gate.
  • This MOS transistor TR 1 is arranged so that its channel direction is parallel with a ⁇ 100> crystal direction of the SOI layer 32 .
  • the supporting substrate wafer 1 has a notch 1 a formed at an edge portion in a ⁇ 110> crystal direction and the SOI layer 32 has a ⁇ 100> crystal direction notch 32 a and a ⁇ 110> crystal direction notch 32 b.
  • the oxide film layer 2 is formed on a surface of an SOI layer wafer 320 and a crystal defect layer DF is formed by a hydrogen ion implantation IP 2 in a portion deeper than the oxide film layer 2 by the thickness DP 1 of the SOI layer 32 (see FIG. 3).
  • the oxide film layer 2 of the SOI layer wafer 320 is bonded to a main surface of the supporting substrate wafer 1 .
  • the position of the bonded plane is shown as BD. Note that the supporting substrate wafer 1 and the SOI layer wafer 320 are bonded so that their ⁇ 100> crystal directions are at an angle of 45° or 135° with respect to each other.
  • FIG. 5 shows the dividing plane as DT.
  • the structure is further heat-treated to increase the bonding strength between the SOI layer 32 and the supporting substrate wafer 1 , and the surface of the SOI layer 32 is lightly polished to remove the residue of the crystal defect layer.
  • the semiconductor wafer 100 shown in FIGS. 1 and 2 are obtained in this way.
  • FIG. 7 shows the VII-VII section of FIG. 6.
  • This manufacturing apparatus includes a holder HD for holding the supporting substrate wafer 1 , a wafer guide GD 2 used as a guide for positioning the SOI layer wafer 320 to be bonded, and an air pin AP for sucking and holding the semiconductor wafer.
  • FIG. 6 shows the SOI layer wafer 320 with broken line and clearly depicts the supporting substrate wafer 1 underneath.
  • the holder HD has a recess HL having a depth DP 2 , where the supporting substrate wafer 1 is placed.
  • a raised portion HLa is formed at the edge of the recess HL; the supporting substrate wafer 1 is placed there with the raised portion HLa engaged with or fitted in the notch 1 a.
  • the wafer guide GD 2 is a guiding member that is situated on the holder HD to surround the recess HL.
  • the raised portion HLa is extended also on the wafer guide GD 2 so that it can be engaged also with the notch 32 a of the SOI layer wafer 320 .
  • the wafer guide GD 2 includes another raised portion GD 1 that can be moved back and forth along the arrow Q shown in the drawings.
  • the raised portion GD 1 can be moved to protrude from the wafer guide GD 2 toward the SOI layer wafer 320 , so that it can be engaged with the ⁇ 110> direction notch 32 b of the SOT layer wafer 320 .
  • the raised portion GD 1 and the raised portion HLa are positioned on the wafer guide GD 2 at an angle of 45° with respect to each other.
  • the raised portion GD 1 is situated at a level higher than the supporting substrate wafer 1 placed in the recess HL so that it will not touch the supporting substrate wafer 1 when it is moved.
  • the raised portion GD 1 is set in the withdrawn position in the wafer guide GD 2 , the supporting substrate wafer 1 is placed in the recess HL of the holder HD, and then the raised portion GD 1 is moved to protrude from the wafer guide GD 2 .
  • the SOI layer wafer 320 is carried with the air pin AP and moved down onto the supporting substrate wafer 1 so that the notch 32 a and the notch 32 b are engaged respectively with the raised portions HLa and GD 1 , and then the SOI layer wafer 320 and the supporting substrate wafer 1 are bonded together.
  • the raised portion GD 1 is withdrawn into the wafer guide GD 2 and the bonded wafers 1 and 320 are pulled up and taken out with the air pin AP.
  • the supporting substrate wafer 1 placed in the recess HL slightly protrudes above the surface of the holder HD.
  • the SOI layer wafer 320 can be put down while ensuring the engagement between the notch 32 b and the raised portion GD 1 .
  • the notch 1 a and the notch 32 a coincide with each other does not mean that their shapes perfectly coincide with each other.
  • the depths of the two notches 1 a and 32 a in the wafer radius direction may somewhat differ from each other.
  • the central angles of the two notches 1 a and 32 a i.e. the angle between the two sides of each “fan” shape, may somewhat differ from each other.
  • the notch 1 a and notch 32 a work as long as their shapes coincide with each other to such an extent that the positioning can be achieved precisely.
  • the raised portion GD 1 engaged with the notch 32 b limits the turning movement of the SOI layer wafer 320 in the wafer plane direction, which makes it possible to more effectively prevent positioning error due to relative turn between the wafers, than in conventional bonding process where wafers are positioned using only the notches 1 a and 32 a .
  • the wafers can be highly precisely positioned, so that an MOS transistor TR 1 having a sufficiently enhanced current driving capability can be formed on the semiconductor wafer, with the two wafers positioned in crystal directions shifted from each other. Furthermore, electric characteristic variations are less likely to occur among MOS transistors TR 1 formed on different semiconductor wafers.
  • the rest of the semiconductor wafer 100 manufacturing process may be conducted by adopting other method, such as an ELTRAN method, as well as the SMART CUT method.
  • This preferred embodiment thus provides a semiconductor wafer and a manufacturing method thereof in which the ⁇ 100> crystal direction notch 32 a and the ⁇ 110> crystal direction notch 32 b are formed in the SOI layer wafer 320 and the two wafers 1 and 320 are bonded together with the ⁇ 100> crystal direction notch 32 a and the ⁇ 110> crystal direction notch 1 a of the supporting substrate wafer 1 coinciding with each other (see FIG. 8).
  • the SOI layer wafer 320 has the notches 32 a and 32 b . Accordingly, while the supporting substrate wafer 1 and the SOI layer wafer 320 are positioned by utilizing the notch 1 a of the wafer 1 and the notch 32 a of the wafer 320 , the notch 32 b of the SOI layer wafer 320 can be engaged with a guide member of the semiconductor wafer manufacturing apparatus to prevent positioning error between the wafers that would be caused if the wafers turn relative to each other. This allows the two wafers 1 and 320 to be precisely positioned. As a result, it is easy to cleave the semiconductor wafer to expose a section along the MOS transistor channel direction, and it is possible to form an MOS transistor with a sufficiently enhanced current driving capability on the semiconductor wafer.
  • the present invention is not limited by this example. That is to say, the present invention can be applied also to bulk wafers that have no oxide film layer 2 . That is, the present invention can be applied to the formation of a bulk wafer in which two bulk wafers are bonded together with their crystal directions shifted from each other, so as to form a bulk wafer whose surface crystal direction differs from that in the deeper portion.
  • notches 32 a and 32 b are formed in the SOI layer wafer 320 respectively in ⁇ 100> and ⁇ 110> crystal directions
  • the invention is not limited by this example.
  • Notches 32 a and 32 b may be formed in directions other than ⁇ 100> and ⁇ 110> crystal directions, and they may be positioned in other relationship with respect to each other.
  • This preferred embodiment shows a method suited to manufacture SOI wafers in which, as shown with the semiconductor wafer 100 of FIG. 1, an SOI layer and a supporting substrate wafer are bonded in crystal directions shifted from each other.
  • FIGS. 9 to 11 are cross-sectional views showing a semiconductor wafer manufacturing method according to this preferred embodiment.
  • an SOI layer wafer 321 and a supporting substrate wafer 1 both of which are a semiconductor wafer that has a (100) plane as a main surface, are prepared and bonded together in such a way that a ⁇ 100> crystal direction of the SOI layer wafer 321 and a ⁇ 110> crystal direction of the supporting substrate wafer 1 coincide with each other (see FIG. 9).
  • FIG. 9 shows the position of the bonded plane as BD. At this stage, no oxide film layer exists on the SOI layer wafer 321 and the supporting substrate wafer 1 .
  • a plurality of notches are formed on the edge of the SOI layer wafer 321 as has been shown in the first preferred embodiment and the two wafers are precisely positioned by using the semiconductor wafer manufacturing apparatus shown in FIGS. 6 and 7.
  • this preferred embodiment is not limited to this example.
  • the surface of the SOI layer wafer 321 is processed by grinding, CMP (Chemical Mechanical Polishing), chemical treatment or the like, so as to thin the SOI layer wafer 321 to form a semiconductor layer 322 (see FIG. 10).
  • the thickness TH of the semiconductor layer 322 may be about 100 to 1000 nm, for example.
  • an oxygen ion implantation IP 1 is applied from the semiconductor layer 322 side into the portion where the two wafers are bonded to each other (into a neighborhood of the bonded plane BD). Then the structure is thermally processed at a temperature of about 1300° C. to 1400° C. to form the oxygen-ion-implanted portion into an oxide film layer 2 . Thus the portion of the semiconductor layer 322 that is left unoxidized forms the SOI layer 32 (see FIG. 11).
  • the dosage of oxygen ions can be 1 ⁇ 10 17 to 1 ⁇ 10 18 cm ⁇ 2 , for example.
  • the SOI layer wafer 321 and the supporting substrate wafer 1 are bonded together with their crystal directions shifted from each other, implanted with oxygen ions, and thermally processed to form the oxygen-ion-implanted portion into the oxide film layer 2 .
  • an oxide film layer is formed on a surface of one wafer and then this wafer is bonded to another wafer, without the need for oxygen ion implantation.
  • nonuniformity of the film thickness of the SOI layer can be easily prevented by precisely controlling the oxygen ion implantation, so as to form a thin film with uniform thickness.
  • this preferred embodiment enables the manufacture of an SOI wafer that has the SOI layer 32 with reduced film thickness nonuniformity.
  • the reduced thickness nonuniformity of the SOI layer enhances the current driving capability.
  • the semiconductor wafer can be easily cleaved so that a section along MOS transistor channel direction is exposed, and a MOS transistor having a remarkably enhanced current driving capability can be formed on the semiconductor wafer.

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US7993974B2 (en) 2007-09-27 2011-08-09 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device
US20090194865A1 (en) * 2007-09-27 2009-08-06 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device, method for detecting a semiconductor substrate and semiconductor chip package
US8288877B1 (en) * 2008-10-25 2012-10-16 Hrl Laboratories, Llc Actuator enhanced alignment of self-assembled microstructures
US8736082B1 (en) 2008-10-25 2014-05-27 Hrl Laboratories, Llc Key structure and expansion enhanced alignment of self-assembled microstructures
JP2015116667A (ja) * 2013-12-16 2015-06-25 東京応化工業株式会社 積層体、積層体の製造方法、及び基板の処理方法
EP3098839A1 (en) * 2015-05-28 2016-11-30 Soitec Method for transferring a layer from a single-crystal substrate
FR3036845A1 (fr) * 2015-05-28 2016-12-02 Soitec Silicon On Insulator Procede de transfert d'une couche d'un substrat monocristallin
CN106409692A (zh) * 2015-05-28 2017-02-15 索泰克公司 用于从单晶衬底转移层的方法
US9768057B2 (en) 2015-05-28 2017-09-19 Soitec Method for transferring a layer from a single-crystal substrate
TWI608520B (zh) * 2015-05-28 2017-12-11 索泰克公司 用於單晶底材之層移轉方法及在底材上包含單晶層之結構
CN115107179A (zh) * 2022-08-29 2022-09-27 江苏京创先进电子科技有限公司 晶圆定位缺口切割方法及系统

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US20060006423A1 (en) 2006-01-12
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US20080032486A1 (en) 2008-02-07
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US20080032487A1 (en) 2008-02-07

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