US20020017363A1 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
US20020017363A1
US20020017363A1 US09/816,643 US81664301A US2002017363A1 US 20020017363 A1 US20020017363 A1 US 20020017363A1 US 81664301 A US81664301 A US 81664301A US 2002017363 A1 US2002017363 A1 US 2002017363A1
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United States
Prior art keywords
susceptor
wafer
substrate
processed
lifting
Prior art date
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Abandoned
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US09/816,643
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English (en)
Inventor
Seiyo Nakashima
Michiko Nishiwaki
Yukinori Aburatani
Satoshi Okada
Eisuke Nishitani
Kazuhiro Nakagomi
Kazuhito Ikeda
Kazuhiro Shimeno
Gakuji Ohta
Katsuhisa Kasanami
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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
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Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Assigned to HITACHI KOKUSAI ELECTRIC INC. reassignment HITACHI KOKUSAI ELECTRIC INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OHTA, GAKUJI, IKEDA, KAZUHITO, NISHIWAKI, MICHIKO, NISHITANI, EISUKE, ABURATANI, YUKINORI, SHIMENO, KAZUHIRO, KASANAMI, KATSUHISA, NAKAGOMI, KAZUHIRO, NAKASHIMA, SEIYO, OKADA, SATOSHI
Publication of US20020017363A1 publication Critical patent/US20020017363A1/en
Priority to US11/258,670 priority Critical patent/US20060075972A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2005—Seal mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing technique for subjecting a substrate to be processed to a desired processing utilizing thermochemical reaction, and still more particularly, to a transfer technique of a substrate to be, processed using a susceptor.
  • the present invention is effectively utilized for a substrate processing technique for forming an oxide film or a metal film on a semiconductor wafer (wafer, hereinafter) in a producing step of a semiconductor device.
  • a single wafer-fed (single wafer by single wafer type) cold wall type CVD apparatus (single wafer-fed CVD apparatus, hereinafter) is used in some cases.
  • a conventional single wafer-fed CVD apparatus of this type comprises a processing chamber for accommodating wafers as substrates to be processed, a susceptor for holding the wafers one by one in the processing chamber, a heating unit for heating the wafer held by the susceptor, a gas head for supplying processing gas to the wafer held by the susceptor, and an exhaust port for evacuating the processing chamber.
  • Japanese Patent No. 2966025 and Japanese Patent Application Laid-open No. 9-7955 for example propose a single wafer-fed CVD apparatus for controlling a temperature distribution of a wafer uniformly over the entire wafer, and for bringing processing gas into contact with the wafer uniformly over the entire wafer by rotating a susceptor holding the wafer.
  • a substrate processing apparatus comprising
  • a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor, wherein
  • the susceptor and the heating unit are accommodated in the processing chamber
  • a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.
  • a space (vacant space) can be formed below the substrate to be processed by lifting and lowering the substrate to be processed by the substrate to be processed lifting and lowering apparatus. Therefore, a tweezer of a mechanical type substrate transfer apparatus can be inserted into the space. That is, by inserting the tweezer into the space below the substrate to be processed, the substrate to be processed can be mechanically supported by the tweezer from below and thus, the substrate to be processed can be transferred by the mechanical type substrate transfer apparatus. That is, it is unnecessary to use a vacuum absorption and holding apparatus or a static absorption and holding apparatus having a complicated structure for transferring the substrate to be processed.
  • a substrate processing apparatus comprising:
  • a susceptor disposed in a processing chamber and on which a substrate to be processed is to be placed
  • a heating unit disposed below the susceptor in the processing chamber for heating the substrate to be processed placed on the susceptor
  • an upper surface of a peripheral portion of the susceptor and an upper surface of the substrate to be processed placed on the susceptor are flush with each other.
  • a substrate processing method using a substrate processing apparatus comprising:
  • a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor, wherein
  • the susceptor and the heating unit are accommodated in the processing chamber
  • a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber, comprising the steps of:
  • the susceptor is rotated to rotate the substrate to be processed, so that a temperature distribution on the substrate to be processed heated by the heating unit becomes uniform over the entire substrate to be processed, and the substrate to be processed is brought Into contact with the atmosphere in the processing chamber uniformly over the entire substrate to be processed. As a result, the substrate to be processed is processed uniformly over the entire substrate to be processed.
  • FIG. 1 is a front sectional view showing a wafer transferring in-out step using a single wafer-fed CVD apparatus according to a first aspect of the present invention
  • FIG. 2 is a perspective view showing a principal part of the Single wafer-fed CVD apparatus shown In FIG. 1;
  • FIG. 3 is a front sectional view showing a processing step using the single wafer-fed CVD apparatus shown in FIG. 1;
  • FIG. 4 is a perspective. view showing a principal part of the single wafer-fed CVD apparatus shown in FIG. 3;
  • FIG. 5 is a front sectional view showing a wafer transfarring in-out step using a single wafer-fed CVD apparatus according to a second aspect of the present invention
  • FIG. 6 is a perspective view showing a principal part of the single wafer-fed CVD apparatus shown in FIG. 5;
  • FIG. 7 is a front view, partly in section, showing a processing step using the single wafer-fed CVD apparatus shown in FIG. 5;
  • FIG. 8 is a perspective view showing a principal part of the single wafer-fed CVD apparatus shown in FIG. 7;
  • FIG. 9A, 9B are front sectional views for explaining operation of a wafer lifting and lowering apparatus, FIG. 9A shows when a wafer is floated up and FIG. 9B shows when the wafer is placed;
  • FIG. 10 is a front view, partly in section, showing one embodiment of a rotation driving apparatus for fixing a support shaft and for rotating a rotating shaft;
  • FIG. 11 is a front sectional view showing a wafer transferring in-out step using a single wafer-fed CVD apparatus according to a third aspect of the present invention.
  • FIG. 12 is a perspective view showing a principal part of the single wafer-fed CVD apparatus shown in FIG. 11;
  • FIG.; 13 is a front view, partly in section, showing a processing step using the single wafer-fed CVD apparatus shown in FIG. 11;
  • FIG. 14 is a perspective view showing a principal part of the single wafer-fed CVD apparatus shown in FIG. 13;
  • FIG. 15A- 15 C are front sectional views for explaining heater operation, FIG. 15A shows heating operation during processing, FIG. 15B shows heating operation during carrying in and out, and FIG. 15C shows heating operation during carrying. in and out in a comparison example;
  • FIG. 16 is a front sectional view showing a wafer transferring in-out step using a single wafer-fed CVD apparatus according to a fourth aspect of the present invention.
  • FIG. 17 is a front view, partly in section, showing a processing step using the single wafer-fed CVD apparatus shown in FIG. 16.
  • the substrate processing apparatus of the invention is formed as a single wafer-fed CVD apparatus (single wafer-fed cold wall type CVD apparatus).
  • the substrate processing apparatus comprises a chamber 12 in which a processing chamber 11 for processing wafers 1 (semiconductor wafers) 1 as substrates to be processed is formed.
  • the chamber 12 is formed into a cylindrical shape comprising a lower cap 13 , an upper cap 14 and a bottom cap 15 combined together. Both upper and lower end surfaces of the chamber 12 are closed.
  • a wafer carry in-out port 16 is transversely formed in a central portion of a cylindrical wall of the lower cap 13 of the chamber 12 in the horizontal direction.
  • the wafer carry in-out port 16 is opened and closed by a gate valve 17 .
  • a mechanical wafer transfer transfers the wafer 1 into and from the processing chamber 11 through the wafer carry in-out port 16 . That is, as shown in FIG. 1, the wafer 1 is mechanically supported from below by a tweezer 2 of a mechanical wafer transfer apparatus and in this state, the wafer 1 is transferred into and from the processing chamber 11 through the wafer carry in-out port 16 .
  • An exhaust port 18 is formed in a wall surface of the lower cap 13 opposed to the wafer carry in-out port 16 at a position slightly higher than the wafer carry in-out port 16 .
  • a vacuum exhaust apparatus (not shown) comprising a vacuum pump or the like is fluidly connected to the exhaust port 18 , and the exhaust port 18 is in communication with the processing chamber 11 .
  • the exhaust port 18 is evacuated to a predetermined degree of vacuum by the vacuum exhaust apparatus.
  • a gas head 20 for supplying processing gas is integrally incorporated into the upper cap 14 of the chamber 12 . That is, a plurality of gas introducing ports 21 are formed in a ceiling wall of the upper cap 14 .
  • Gas supply apparatus (not shown) for introducing processing gas 3 (see FIG. 3) such as raw gas or purge gas is connected to the gas introducing ports 21 through gas introducing tubes (not shown).
  • a disc-like gas-blowout plate (plate, hereinafter) 22 is horizontally fitted and fixed between mating surfaces of the upper cap 14 and the lower cap 13 at a distance from the gas introducing ports 21 .
  • a plurality of gas-blowout ports (blowout ports, hereinafter) 23 are uniformly formed in the plate 22 over its entire surface so that the upper and lower portions can be brought into communication with each other.
  • a gas reservoir 24 is formed by an inner space defined by an inner surface of the upper cap 14 and an upper surface of the plate 22 . The gas reservoir 24 disperses the processing gas introduced into the gas introducing ports 21 entirely uniformly and blows out the processing gas uniformly like shower.
  • a insertion hole 25 is formed in the center of the bottom cap 15 of the chamber 12 , and a cylindrical support shaft 26 is inserted into the processing chamber 11 from below on a center line of the insertion hole 25 .
  • the support shaft 26 is lifted and lowered by a lifting and lowering driving apparatus (not shown) using an air cylinder apparatus or the like.
  • a nitrogen gas supply apparatus (not shown) for supplying nitrogen gas (see FIG. 3) as inert gas is connected to a cylindrical hollow portion of the support shaft 26 .
  • a heating unit 27 is concentrically disposed on an upper end of the support shaft 26 and horizontally fixed thereto, and the heating unit 27 is lifted and lowered by the support shaft 26 . That is, the heating unit 27 is provided with a doughnut-like flat-plate shaped support plate 28 , and an inner peripheral portion of the support plate 28 is fixed to an upper end opening of the support shaft 26 .
  • a heater 30 bridges over and fixed between upper ends of the electrodes 29 . The heater 30 entirely uniformly heats the wafer 1 held by a susceptor 40 (which will be described later).
  • a reflection plate 31 on which a titanium thin film is mirror-finished is horizontally supported by columns 32 standing on the support plate 28 below the heater 30 of the heating unit 27 .
  • the reflection plate 31 effectively reflects heat wave radiated from the heater 30 vertically upward.
  • a plurality of thermocouples 33 as temperature sensors are disposed on the support plate 28 at appropriate distances from each other such as to project above the heater 30 .
  • the thermocouples 33 measure a temperature of the wafer 1 heated by the heater 30 .
  • Electric wires (not shown) of the heater 30 and the thermocouples 33 are connected to an external power supply or a controller through an opening of the support plate 28 and a hollow portion of the support shaft 26 from the heating unit 27 .
  • a cylindrical rotation shaft 34 having a larger diameter than the support shaft 26 is concentrically disposed outside of the support shaft 26 of the insertion hole 25 of the bottom cap 15 , and is inserted into the processing chamber 11 from below.
  • the rotation shaft 34 is lifted and lowered together with the support shaft 26 by the lifting and lowering driving apparatus using an air cylinder or the like.
  • a rotation drum 35 is concentrically disposed on an upper end of the rotation shaft 34 and horizontally fixed thereto, and is rotated by the rotation shaft 34 .
  • the rotation drum 35 comprises a doughnut-like flat-plate shaped rotation plate 36 , and a cylindrical rotation cylinder 37 .
  • An inner peripheral portion of the rotation plate 36 is fixed to an upper end opening of the cylindrical rotation shaft 34
  • a rotation cylinder 37 is concentrically fixed to an outer peripheral portion of the rotation plate 36 .
  • the susceptor 40 is put on an upper end of the rotation cylinder 37 of the rotation drum 35 such as to occlude the upper end opening of the rotation cylinder 37 .
  • the susceptor 40 comprises a disc-like central member 41 .
  • a ring-like first peripheral member 42 and second peripheral member 43 and these members are concentrically disposed such as to form one disc. Steps formed on adjacent outer peripheral side and inner peripheral side vertically engage each other such that the inner step is supported by the outer step.
  • the central member 41 is made of silicon carbide or aluminum nitride, and an outer diameter of the central member 41 is smaller than an outer diameter of the wafer 1 .
  • the first peripheral member 42 supporting the central member 41 at its outer side is made of silicon carbide or aluminum nitride, and an inner diameter of the first peripheral member 42 is equal to the outer diameter of the central member 41 , and an outer diameter thereof is larger than the outer diameter of the wafer 1 .
  • the second peripheral member 43 supporting the first peripheral member 42 at its outer side is made of quartz, an inner diameter is equal to the outer diameter of the first peripheral member 42 , and an outer diameter thereof is slightly larger than the inner diameter of the rotation cylinder 37 .
  • Upper surfaces of the first peripheral member 42 and the second peripheral member 43 are higher than an upper surface of the central member 41 by a height corresponding to the thickness of the wafer 1 . That is, the upper surfaces of the first peripheral member 42 and the second peripheral member 43 are flush with the upper surface of the wafer 1 placed on the upper surface of the central member 41 .
  • the upper surfaces of the first peripheral member 42 and the second peripheral member 43 are radially formed with three guide grooves 44 in the circumferential direction.
  • Engaging members 53 of a wafer lifting and lowering apparatus 50 (which will be described later) can slidably inserted into the guide grooves 44 , respectively.
  • the second peripheral member 43 is formed with a plurality of nitrogen gas blowout ports 45 in the circumferential direction at equal distances from one another such as to vertically pass through the second peripheral member 43 .
  • the nitrogen gas blowout ports 45 equally blow out the nitrogen gas 4 supplied into the rotation drum 35 through the cylindrical hollow portion of the support shaft 26 toward the susceptor 40 over the entire circumference.
  • the wafer lifting and lowering apparatus 50 is disposed on an outer side of the rotation drum 35 for lifting and lowering the wafer 1 as a substrate to be processed with respect to the susceptor 40 and the heating unit 27 . That is, the wafer lifting and lowering apparatus 50 comprises a circular ring-like lifting and lowering ring 51 , and the lifting and lowering ring 51 is concentrically disposed in the vicinity of an outer periphery of the rotation drum 35 .
  • Three columns 52 vertically stand upward at equal distances from one another in the circumferential direction. The three columns 52 are disposed at such location that the columns 52 do not hinder the transfer operation of the wafer 1 to and from the wafer carry in-out port 16 . That is, the three 52 do not interfere with the tweezer 2 of the wafer transfer apparatus inserted into the wafer carry in-out port 16 .
  • the engaging members 53 are horizontally and radially projected inwardly.
  • the engaging members 53 are detachably fitted into the guide grooves 44 from above.
  • the engaging members 53 are formed at their tip ends with thin engaging claws 54 , and the engaging claws 54 can engage an outer peripheral lower surface of the wafer 1 placed on the central member 41 of the susceptor 40 from below.
  • Three abutting members 55 are disposed on a lower end surface of the lifting and lowering ring 51 in the circumferential direction at equal distances from one another, and suspended vertically downward. Lower end surfaces of the abutting members 55 are opposed to a chamber-side abutting portion 56 formed in a shape of a step at a lower position than the wafer carry in-out port 16 on an inner peripheral surface of the lower cap 13 of the chamber 12 .
  • the abutting members 55 are fitted into guides 57 projected from an outer periphery of the rotation cylinder 37 with appropriate clearances, thereby positioning the lifting and lowering ring 51 with respect to the rotation drum 35 in the circumferential direction, and guiding the lifting and lowering operation.
  • the wafer lifting and lowering apparatus 50 floats up the wafer 1 from the upper surface of the susceptor 40 , since an insertion space is formed below the wafer 1 , i.e., between the lower surface of the wafer 1 and the upper surface of the susceptor 40 , the tweezer 2 of the wafer transfer apparatus is inserted into the insertion space of the wafer 1 from the wafer carry in-out port 16 . At that time, the columns 52 supporting the three engaging members 53 do not interfere with the tweezer 2 of the wafer transfer apparatus inserted into the wafer carry in-out port 16 .
  • the tweezer 2 inserted below the wafer 1 is lifted, and the tweezer 2 transfers and receives the wafer 1 .
  • the tweezer 2 which received the wafer 1 moves the wafer carry in-out port 16 backward and transfers the wafer 1 out from the processing chamber 11 .
  • the wafer transfer apparatus which transferred out the wafer 1 by the tweezer 2 transfers the wafer 1 to a predetermined accommodating place (not shown) such as a vacant wafer cassette outside the processing chamber
  • the wafer transfer apparatus receives another wafer 1 on which a film is formed by the tweezer 2 from a predetermined accommodating place (not shown) such as a wafer cassette, and transfers the wafer 1 from the wafer carry in-out port 16 to the processing chamber 11 .
  • a predetermined accommodating place such as a wafer cassette
  • the tweezer 2 transfers the wafer 1 to a position where a center of the wafer 1 coincides with a center of the susceptor 40 above the three engaging members 53 . If the tweezer 2 transferred the wafer 1 to the predetermined position, the tweezer 2 is slightly lowered and transfers the wafer 1 to the three engaging members 53 . At that time, the thin engaging claws 54 on the tip ends of the three engaging members 53 slightly engage the outer periphery of the wafer 1 from below to receive the wafer 1 .
  • the tweezer 2 which transferred the wafer 1 to the wafer lifting and lowering apparatus 50 in this manner goes out from the processing chamber 11 through the wafer carry in-out port 16 .
  • the wafer carry in-out port 16 is closed by the gate valve 17 .
  • the wafer 1 placed on the susceptor 40 is heated by the heater 30 , and a temperature of the heater 30 and a temperature of the wafer 1 are measured by the thermocouples 33 .
  • a heating amount of the heater 30 is feedback controlled in accordance with the measured result of the thermocouples 33 .
  • the thin engaging claws 54 of the three engaging members 53 are in slight contact with the outer periphery of the wafer 1 , this does not affect the heating operation of the heater 30 , and the temperature distribution of the wafer 1 is entirely uniform irrespective of existence of the engaging members 53 .
  • the outermost peripheral second peripheral member 43 is made of quartz, it is possible to prevent the heat of the wafer 1 from escaping outside.
  • the rotation drum 35 and the heating unit 27 lifts the processing chamber 11 by the rotation shaft 34 and the support shaft 26 , and stops lifting the processing chamber 11 at the height at which the upper surface of the wafer 1 approach the lower surface of the plate 22 .
  • the exhaust port 18 is evacuated by the vacuum exhaust apparatus, and the rotation drum 35 is rotated by the rotation shaft 34 .
  • the processing gas 3 is introduced into the gas introducing ports 21 .
  • the nitrogen gas 4 is blown out from the nitrogen gas blowout ports 45 uniformly.
  • the processing gas 3 introduced into the gas introducing ports 21 flows into the gas reservoir 24 by the exhausting force of the exhaust port 18 acting on the gas reservoir 24 , and disperse radially outward, and flows from the blowout ports 23 of the plate 22 substantially uniformly, and the processing gas 3 blown out like shower from the blowout ports 23 is drawn into the exhaust port 18 and exhausted.
  • a film formation rate by the thermochemical reaction of the processing gas 3 depends on a contact amount of the processing gas 3 with respect to the wafer 1 , if the processing gas 3 is in contact with the entire surface of the wafer 1 uniformly, the film thickness distribution and the film quality distribution of the CVD film formed on the wafer 1 by the processing gas 3 becomes uniform over the entire surface of the wafer 1 .
  • the heating unit 27 is supported by the support shaft 26 and is not rotated, the temperature distribution of the wafer 1 which is heated by the heating unit 27 while being rotated by the rotation drum 35 is controlled uniformly in the circumferential direction.
  • the film formation rate by the thermochemical reaction largely depends on the temperature distribution, if the temperature of the wafer 1 is uniformly over the entire surface, the film thickness distribution and the film quality distribution of the CVD film formed on the wafer 1 by the thermochemical reaction is controlled uniformly over the entire surface of the wafer 1 .
  • the nitrogen gas 4 is blown out from the nitrogen gas blowout ports 45 and the rotation drum 35 is filled with the nitrogen gas 4 . Therefore, the processing gas 3 is prevented from entering the rotation drum 35 .
  • the heater 30 of the heating unit 27 it is possible to prevent the heater 30 of the heating unit 27 from being adversely deteriorated by the processing gas 3 which entered the rotation drum 35 , and to prevent the processing gas 3 from adversely adhering the reflection plate 31 or the thermocouples 33 to deteriorate the functions thereof.
  • the CVD films are formed on the wafers 1 by the single wafer-fed CVD apparatus 10 one by one.
  • thermocouples 33 Since the heating unit 27 is not rotated, the heater 30 and the thermocouples 33 can be disposed in the heating unit 27 , and electric wires for the heater 30 and the thermocouples 33 can easily be provided in the heating unit 27 .
  • the wafer lifting and lowering apparatus 50 lifts the wafer 1 to form the insertion space between the lower surface of the wafer 1 and the lower surface of the susceptor 40 . Therefore, the tweezer 2 can be inserted into the insertion space and thus, the wafer 1 can be mechanically supported by the tweezer 2 from below, and the wafer 1 can be transferred by the mechanical wafer transfer apparatus.
  • a vacuum absorption and holding apparatus including a non-contact type vacuum absorption and holding apparatus holds a wafer by a pressure difference between upper and lower surfaces of the wafer
  • the vacuum absorption and holding apparatus can not be used in a decompression chamber.
  • a the static absorption and holding apparatus absorbs a wafer utilizing static electricity, the apparatus can not be used when there is a possibility of electrostatic destroy, and a diselectrifying apparatus or an antistatic apparatus is required, and a structure and management of the apparatus become complicated.
  • the wafer lifting and lowering apparatus 50 is disposed outside the rotation drum 35 , the three engaging members 53 slightly engage the outer periphery of the wafer 1 to support the wafer 1 from below. Therefore, effect exerted on heating of the heating unit 27 of the wafer lifting and lowering apparatus 50 can be suppressed and thus, the temperature distribution of the wafer 1 can be controlled entirely uniformly over the entire wafer 1 Irrespective of existence of the wafer lifting and lowering apparatus 50 .
  • the second peripheral member 43 located at outermost peripheral portion of the susceptor 40 is made of quartz, it is possible to prevent the heat of the wafer 1 from escaping outside. Therefore, it is possible to control the temperature distribution uniformly over the entire wafer 1 .
  • the plurality of nitrogen gas blowout ports 45 are formed in the second peripheral member 43 of the outermost periphery of the susceptor 40 in the circumferential direction at equal distances from one another, the nitrogen gas 4 is supplied to the rotation drum 35 supporting the susceptor 40 to blow out the nitrogen gas 4 from the nitrogen gas blowout ports 45 .
  • the abutting members 55 of the wafer lifting and lowering apparatus 50 abut against the step-like abutting portion 56 formed on the side wall of the lower cap 13 of the chamber 12
  • the abutting members 55 may abut against a bottom surface (upper surface of the bottom cap 15 ) of the processing chamber 11 .
  • the second embodiment is different from the first embodiment mainly in that the wafer lifting and lowering apparatus for lifting and lowering the wafer as a substrate to be processed with respect to the susceptor and the heating unit is disposed inside the rotation drum.
  • a wafer lifting and lowering apparatus 60 disposed inside the rotation drum includes three push-up pins (fixed pins, hereinafter) 61 fixed on a bottom wall (upper surface of the bottom cap 15 ) vertically upwardly, and the three fixed pins 61 are disposed at locations where the pins 61 do not hinder the transferring operation of the wafer 1 to and from the wafer carry in-out port 16 . That is, the three fixed pins 61 are disposed at locations where the pins 61 do not interfere with the tweezer 2 of the wafer transfer apparatus to be inserted into the wafer carry in-out port 16 .
  • each of the fixed pins 61 is formed into a thumbtack having a long.pin portion 62 and a flange 63 , and a lower surface of the flange 63 abuts against the upper surface of the bottom cap 15 and the pin 61 stands vertically upwardly.
  • a seat plate 64 is fitted around an outer periphery of the pin portion 62 , and the seat plate 64 is placed on an upper surf ace of the flange 63 .
  • a length of the pin portion 62 . is set such that the length corresponds to a push-up amount of the wafer from the susceptor.
  • a thickness of the pin portion 62 is set such that the-pin portion 62 can be inserted into an insertion hole 65 formed in the rotation plate 36 of the rotation drum 35 and into an insertion hole 66 formed in a casing 27 A of the heating unit 27 .
  • the three insertion holes (rotation-side insertion holes, hereinafter) formed in the rotation plate 36 of the rotation drum 35 are respectively opposed to the three fixed pins 61 at locations where the rotation drum 35 is lifted and lowered.
  • the three insertion holes (fixed insertion holes, hereinafter) 66 formed in the casing 27 A of the heating unit 27 are respectively opposed to the three fixed pins 61 . That is, at locations where the rotation drum 35 is lifted and lowered, the three fixed pins 61 are inserted through the three rotation-side insertion holes 65 and the three fixedinsertion holes 66 , respectively.
  • Three guide holes 68 are formed in the support plate 28 of the heating unit 27 such as to be opposed to the fixed. insertion holes 66 , respectively.
  • Pins (movable pins, hereinafter) 69 for pushing up the wafer from the susceptor are vertically slidably fitted into the guide holes 68 .
  • Each of the movable pins 69 includes a large-diameter portion and a small-diameter portion and formed into a round rod shape, and a lower end of the large-diameter portion is formed with a flange 70 .
  • the flange 70 is opposed to a bottom surface of a support hole 67 formed in an upper end of the fixed insertion hole 66 .
  • the small-diameter portion of the upper end of the movable pin 69 is formed with a push-up portion 71 .
  • the push-up portion 71 pass through the reflection plate 31 , the heater 30 and the susceptor 40 .
  • insertion holes 72 , 72 and 74 are formed such that the push-up portions 71 can be inserted into the insertion holes 72 , 72 and 74 .
  • the three insertion holes 74 formed in the susceptor 40 are positioned at an outer peripheral portion of the central member 41 of the susceptor 40 , and the three insertion holes 74 disposed in the circumferential direction are opposed to the three fixed pins 61 . Therefore, the insertion holes 74 do not interfere with the tweezer 2 of the Wafer transfer apparatus to be inserted into the wafer carry in-out port 16 .
  • the wafer lifting and lowering apparatus 60 floats up the wafer 1 from the upper surface of the susceptor 40 , since an insertion space is formed below a the wafer 1 , i.e., between the lower surface of the wafer 1 and the upper surface of the susceptor 40 , the tweezer 2 of the wafer transfer apparatus is inserted into the insertion space of the wafer 1 from the wafer carry in-out port 16 .
  • three movable pins 69 do not interfere with the tweezer 2 of the wafer transfer apparatus inserted into the wafer carry in-out port 16 .
  • the tweezer 2 inserted below the wafer 1 is lifted, and the tweezer 2 transfers and receives the wafer 1 .
  • the tweezer 2 which received the wafer 1 moves the wafer carry in-out port 16 backward and transfers the wafer 1 out from the processing chamber 11 .
  • the wafer transfer apparatus which transferred out the wafer 1 by the tweezer 2 transfers the wafier 1 to a predetermined accommodating place (not shown) such as a vacant wafer cassette outside the processing chamber 11 .
  • the wafer transfer apparatus receives another wafer 1 on which a film is formed by the tweezer 2 from a predetermined accommodating place (not shown) such as a wafer cassette, and transfers the wafer 1 from the wafer carry in-out port 16 to the processing chamber 11 .
  • the tweezer 2 transfers the wafer 1 to a position where a center of the wafer 1 coincides with a center of the susceptor 40 above the three movable pins 69 . If the tweezer 2 transferred the wafer 1 to the predetermined position, the tweezer 2 is slightly lowered and transfers the wafer 1 to the three movable pins 69 .
  • the tweezer 2 which transferred the wafer 1 to the wafer lifting and lowering apparatus 60 in this manner goes out from the processing chamber 11 through the wafier carry in-out port 16 .
  • the wafer carry in-out port 16 is closed by the gate valve 17 .
  • the wafer 1 moved onto the susceptor 40 is heated by the heater 30 , and a temperature of the heater 30 and a temperature of the wafer 1 are measured by the thermocouples 33 .
  • a heating temperature of the heater 30 is feedback controlled in accordance with the measured result of the thermocouples 33 .
  • the insertion holes 74 through which the three movable pins 69 are to be inserted are only opened slightly at the outer periphery of the wafer 1 , this does not affect the heating operation of the heater 30 , and the temperature distribution of the wafer 1 is entirely uniform irrespective of existence of the three insertion holes 74 .
  • the rotation drum 35 and the heating unit 27 lifts the processing chamber 11 by the rotation shaft 34 and the support shaft 26 . and stops lifting the processing chamber 11 at the height at which the upper surface of the wafer 1 approach the lower surface of the plate 22 .
  • the exhaust port 18 is evacuated by the vacuum exhaust apparatus, and the rotation drum 35 is rotated by the rotation shaft 34 .
  • the processing gas 3 is introduced into the gas introducing ports 21 .
  • the processing gas 3 introduced into the gas introducing ports 21 flows into the gas reservoir 24 by the exhausting force of the exhaust port 18 acting on the gas reservoir 24 , and disperse radially outward, and flows from the blowout ports 23 of the plate 22 substantially uniformly, and blows out like shower toward the wafer 1 .
  • the processing gas 3 blown out like shower from the blowout ports 23 is drawn into the exhaust port 18 and exhausted.
  • the heating unit 27 is supported by the support shaft 26 and is not rotated, the temperature distribution of the wafer 1 which is heated by the heating unit 27 while being rotated by the rotation drum 35 is controlled uniformly in the circumferential direction. If the temperature of the wafer 1 is uniformly over the entire surface, the film thickness distribution and the film quality distribution of the CVD film formed on the wafer 1 by the thermochemical reaction is controlled uniformly over the entire surface of the wafer 1 .
  • the CVD films are formed on the wafers 1 by the single wafer-fed CVD apparatus 10 one by one.
  • the wafer lifting and lowering apparatus 60 lifts the wafer 1 to form the insertion space between the lower surface of the wafer 1 and the lower surface of the susceptor 40 . Therefore, the tweezer 2 can be inserted into the insertion space and thus, the wafer 1 can be mechanically supported by the tweezer 2 from below. That is, in the second embodiment also, the wafer 1 can be transferred to and from the susceptor 40 by the mechanical wafer transfer apparatus.
  • the processing gas 3 can be brought into contact with the entire surface of the wafer 1 uniformly. Therefore, it is possible to control the film thickness distribution and the film quality distribution of the CVD film formed on the wafer 1 by the processing gas 3 .
  • the susceptor 40 holding the wafer 1 is rotated and the heating unit 27 is stopped. Therefore, it is possible to uniformly control, in the circumferential direction, the temperature distribution of the wafer 1 heated by the heating unit 27 while the wafer 1 is rotated by the susceptor 40 .
  • the film thickness distribution and the film quality distribution of the CVD film formed on the wafer 1 by the thermochemical reaction can be controlled uniformly over the entire surface of the wafer 1 .
  • the heater 30 and the thermocouples 33 can be disposed in the heating unit 27 , and electric wires for the heater 30 and the thermocouples 33 can easily be provided in the heating unit 27 .
  • the wafer lifting and lowering apparatus 60 for lifting and lowering the wafer 1 with respect to the susceptor 40 is disposed on the inner side of the susceptor 40 , it is possible to prevent the wafer lifting and lowering apparatus 60 from projecting outside the rotation drum 35 , and to prevent the volume of the processing chamber 11 from being increased.
  • the susceptor 40 and the heating unit 27 are lifted and lowered while keeping a distance therebetween constant. With this arrangement, it is possible to maintain the heated state of the susceptor 40 constant and thus, the stability of the temperature can be enhanced.
  • the rotation driving apparatus shown in FIG. 10 includes a hollow shaft electric motor (motor, hereinafter) 75 .
  • a hollow output shaft of the motor 75 is formed as the rotation shaft 34 for rotating the rotation drum 35 .
  • a housing 75 a of the motor 75 comprises an air cylinder apparatus or the like, and the housing 75 a is stationarily disposed vertically upward on an elevator lifting and lowering stage 76 . Only a portion of the elevator lifting and lowering stage 76 is illustrated in the drawing.
  • the housing 75 a is lifted and lowered with respect to the chamber 12 of the single wafer-fed CVD apparatus by the elevator lifting and lowering stage 76 .
  • a stator 75 b is fixed to an inner peripheral surface of the housing 75 a, and an armature 75 c of the motor 75 is concentrically disposed on inner side of the stator 75 b with an air gap interposed therebetween.
  • the armature 75 c is rotatably supported by the housing 75 a.
  • the rotation shaft 34 which is a hollow output shaft is fixed to the armature 75 c such that the rotation shaft 34 rotates in unison with the armature 75 c.
  • the support shaft 26 is disposed on the center line of the rotation shaft 34 and fixed to the housing 75 a.
  • a hermetic seal 77 for fluidly isolating the hollow portion of the support shaft 26 , i.e., inside and outside of the processing chamber 11 is mounted to a lower end opening of the support shaft 26 . Electric wires (not shown) of the heater 30 and the thermocouples 33 are pulled out from the hollow portion of the support shaft 26 through the hermetic seal. 77 .
  • Bellows 78 for sealing the insertion hole 25 of the chamber 12 is concentrically disposed on the outer side of the rotation shaft 34 . Upper and lower ends of the bellows 78 are respectively fastened to a lower surface of the bottom cap 15 of the chamber 12 and an upper surface of the flange of the rotation shaft 34 .
  • the rotation shaft 34 can be rotated while fixing the support shaft 26 , if the heating unit 27 is supported by the support shaft 26 and the rotation drum 35 is supported by the rotation shaft 34 , it is possible to rotate the susceptor 40 , i.e., the wafer 1 while the heating unit 27 is stopped.
  • the third embodiment is different from the first embodiment mainly in that the wafer lifting and lowering apparatus is disposed inside the rotation drum, the wafer is lifted and lowered through a central member of the susceptor, and the heater is divided.
  • the wafer lifting and lowering apparatus 80 disposed inside the rotation drum includes a circular lifting and lowering ring 81 .
  • the lifting and lowering ring 81 is disposed on the rotation plate 36 of the rotation drum 35 concentrically with the support shaft 26 .
  • a plurality of (three, in this embodiment) push-up pins (rotation-side pins, hereinafter) 82 are vertically downwardly projected on a lower surface of the lifting and lowering ring (rotation-side ring, hereinafter) 81 at equal distances from one another in the circumferential direction.
  • Movable pins 69 are disposed on the rotation plate 36 concentrically with the rotation shaft 34 and slidably fitted into vertically formed guide holes 83 respectively.
  • Lengths of the movable pins 69 are set equally so as to push up the rotation-side ring 81 horizontally, and the lengths correspond to the pushing-up amount of the wafer from the susceptor. Lower ends of the movable pins 69 are opposed to the bottom surface of the processing chamber 11 , i.e., the upper surface of the bottom cap 15 such that the movable pins 69 can be brought into and out of contact with the bottom surface of the processing chamber 11 , i.e.. the upper surface of the bottom cap 15 .
  • a circular second lifting and lowering ring (heater-side ring, hereinafter) 84 is disposed on the support plate 28 of the heating unit 27 concentrically with the support shaft 26 .
  • a plurality of (three, in the present embodiment) push-up pins (heater-side pins, hereinafter) 85 are disposed on a lower surface of the heater-side ring 84 at equal distances from one another in the circumferential direction, and the push-up pins 85 are projecting vertically downward.
  • the heater-side pins 85 are disposed on the support plate 28 concentrically with the support shaft 26 and slidably fitted into the guide holes 86 formed in the vertical direction.
  • Lengths of the heater-side pins 85 are set equal to each other such as to push up the heater-side ring 84 horizontally, and lower ends of the heater-side pins 85 are opposed to an upper surface of the rotation-side ring 81 with an appropriate air gas interposed therebetween. That is, when the rotation drum 35 is rotated, the heater-side pins 85 do not interfere with the rotation-side ring 81 .
  • a plurality of (three, in the present embodiment) push-up pins (push-up portions, hereinafter) 87 are vertically upwardly projecting from an upper surface of the heater-side ring 84 at equal distances from one another in the circumferential direction. Upper ends of the push-up portions 87 pass through the reflection plate 31 , the heater 30 and the susceptor 40 and are opposed to a lower surface of the central member 41 of the susceptor 40 . Lengths of the push-up portions 87 are set equal to each other such as to push up the central member 41 horizontally.
  • the upper ends of the push-up portions 87 are located on the upper side of the heater 30 , but as shown with phantom line in FIG. 15A, it is preferable that the upper ends of the push-up portions 87 are located below the heater 30 and the reflection plate 31 in view of heating effect of the heating unit 27 . That is, if the push-up portions 87 are projecting above the heater 30 and the reflection plate 31 , there is an adverse possibility that hot wires of the heater 30 and the reflection plate 31 are shielded.
  • the heater 30 of the heating unit 27 is divided into a central heater member 30 a corresponding to the central member 41 of the susceptor 40 and a peripheral heater member 30 b corresponding to the first peripheral member 42 and the second peripheral member 43 of the susceptor 40 .
  • Outputs of the central heater member 30 a and the peripheral heater member 30 b can be controlled independently.
  • the heater-side ring 84 If the heater-side ring 84 is pushed up, the three push-up portions 87 standing on the heater-side ring 84 support the central member 41 of the susceptor 40 from below, and float up the central member 41 from the first peripheral member 42 and the second peripheral member 43 . Since the central portion of the wafer 1 is placed on the central member 41 , the wafer 1 is floated up.
  • the wafer lifting and lowering apparatus 80 floats up the wafer 1 from the upper surface of the susceptor 40 , the insertion space is formed below the wafer 1 , i.e., between the lower surface of the wafer 1 and the upper surface of the susceptor 40 . Therefore, a fork-like tweezer 2 A of the wafer transfer apparatus is inserted into the insertion space of the wafer 1 from the wafer carry in-out port 16 . At that time, since the central portion of the wafer 1 is supported by the central member 41 , the fork-like tweezer 2 A shown in FIG. 12 is used. That is, the tweezer 2 A does not interfere with the central member 41 of the central portion of the wafer 1 .
  • the tweezer 2 A inserted below the wafer 1 is lifted, and the tweezer 2 A transfers and receives the wafer 1 .
  • the fork-like tweezer 2 A receives an outer peripheral portion of the lower surface of the wafer 1 .
  • the tweezer 2 which received the wafer 1 moves the wafer carry in-out port 16 backward and transfers the wafer 1 out from the processing chamber 11 .
  • the wafer transfer apparatus which transferred out the wafer 1 by the tweezer 2 A transfers the wafer 1 to a predetermined accommodating place (not shown) such as a vacant wafer cassette outside the processing chamber 11 .
  • the wafer transfer apparatus receives another wafer 1 on which a film is formed by the tweezer 2 A from a predetermined accommodating place (not shown) such as a wafer cassette, and transfers the wafer 1 from the wafer carry in-out port 16 to the processing chamber 11 .
  • the tweezer 2 A transfers the wafer 1 to a position where a center of the wafer 1 coincides with a center of the central member, 41 above the central member 41 of the susceptor 41 . If the tweezer 2 A transferred the wafer 1 to the predetermined position, the tweezer 2 A is slightly lowered and transfers the wafer 1 to the central member 41 .
  • the tweezer 2 which transferred the wafer 1 to the wafer lifting and lowering apparatus 50 in this manner goes out from the processing chamber 11 through the wafer carry in-out port 16 .
  • the wafer carry in-out port 16 is closed by the gate valve 17 .
  • the wafer 1 placed on the susceptor 40 is heated by the heater 30 , and a temperature of the heater 30 and a temperature of the wafer 1 are measured by the thermocouples 33 .
  • a heating amount of the heater 30 is feedback controlled In accordance with the measured result of the thermocouples 33 . Since the susceptor 40 is not formed with insertion holes through which the push-up portions 87 are inserted, the temperature distribution of the wafer 1 is uniform entirely irrespective of the existence of the wafer lifting and lowering apparatus 80 . Further, as described above, when the susceptor 40 is received, since the central member 41 is previously heated, the temperature distribution of the wafer 1 is uniform entirely although the central member 41 received the wafer 1 .
  • the rotation drum 35 and the heating unit 27 lifts the processing chamber 11 by the rotation shaft 34 and the support shaft 26 , and stops lifting the processing chamber 11 at the height at which the upper surface of the wafer 1 approach the lower surface of the plate 22 .
  • the exhaust port 18 is evacuated by the vacuum exhaust apparatus.
  • the rotation drum 35 is rotated by the rotation shaft 34 .
  • the rotation-side pins 82 are separated from the bottom surface of the processing chamber 11 , and the heater-side pins 85 are separated from the rotation-side ring 81 . Therefore, the rotation of the rotation drum 35 is not hindered by the wafer lifting and lowering apparatus 80 , and the stopped state of the heating unit 27 can be maintained. That is, in the wafer lifting and lowering apparatus 80 , the rotation-side ring 81 rotates together with the rotation drum 35 , and the heater-side ring 84 is stopped together with the heating unit 27 .
  • the processing gas 3 is introduced into the gas introducing ports 21 .
  • the processing gas 3 introduced into the gas introducing ports 21 flows into the gas reservoir 24 by the exhausting force of the exhaust port 18 acting on the gas reservoir 24 , and disperse radially outward, and flows from the blowout ports 23 of the plate 22 substantially uniformly, and blows out like shower toward the wafer 1 .
  • the processing gas 3 blown out like shower from the blowout ports 23 is drawn into the exhaust port 18 and exhausted.
  • the heating unit 27 is supported by the support shaft 26 and is not rotated, the temperature distribution of the wafer 1 which is heated by the heating unit 27 while being rotated by the rotation drum 35 is controlled uniformly in the circumferential direction. Since the susceptor 40 is not formed with the insertion holes through which the push-up portions 87 are inserted, and since the central member 41 is previously heated when receiving the susceptor 40 , the temperature distribution of the wafer 1 is controlled uniformly over the entire wafer 1 . If the temperature of the wafer 1 is uniformly over the entire surface, the film thickness distribution and the film quality distribution of the CVD film formed on the wafer 1 by the thermochemical reaction is controlled uniformly over the entire surface of the wafer 1 .
  • the CVD films are formed on the wafers 1 by the single wafer-fed CVD apparatus 10 one by one.
  • the wafer 1 can be transferred to and from by the mechanical wafer transfer apparatus.
  • the processing gas 3 can be brought into contact with the entire surface of the wafer 1 uniformly. Therefore, it is possible to control the film thickness distribution and the film quality distribution of the CVD film formed on the wafer 1 by the processing gas 3 .
  • the susceptor 40 holding the wafer 1 is rotated and the heating unit 27 is stopped, and therefore, it is possible to uniformly control, in the circumferential direction, the temperature distribution of the wafer 1 heated by the heating unit 27 while the wafer 1 is rotated by the susceptor 40 .
  • the film thickness distribution and the film quality distribution of the CVD film formed on the wafer 1 by the thermochemical reaction can be controlled uniformly over the entire surface of the wafer 1 .
  • the heater 30 and the thermocouples 33 can be disposed in the heating unit 27 , and electric wires for the heater 30 and the thermocouples 33 can easily be provided in the heating unit 27 .
  • the wafer lifting and lowering apparatus 80 for lifting and lowering the wafer 1 is disposed on the inner side of the susceptor 40 , it is possible to prevent the wafer lifting and lowering apparatus 80 from projecting outside the rotation drum 35 , and to prevent the volume of the processing chamber 11 from being increased.
  • the temperature distribution of the wafer 1 can be controlled uniformly over the entire wafer 1 irrespective of the existence of the wafer lifting and lowering apparatus 80 .
  • the temperature distribution of the wafer 1 can be controlled uniformly over the entire wafer 1 although the wafer 1 is received by the central member 41 .
  • the fourth embodiment is different from the third embodiment in that the rotation-side ring 81 is omitted in a wafer lifting and lowering apparatus 90 , and the rotation drum 35 is lifted and lowered with respect to the heating unit 27 . That is, as shown in FIGS. 16 and 17, the support shaft 26 supporting the heating unit 27 is lifted and lowered with respect to the processing chamber 11 , and the support shaft 26 is lifted and lowered independently with respect to the rotation shaft 34 supporting the rotation drum 35 .
  • a push-up pin 95 projects vertically downwardly from the lower surface of a lifting and lowering ring 94 of the wafer lifting and lowering apparatus 90 .
  • the push-up pin 95 is inserted through a guide hole 96 formed in the support plate 28 of the heating unit 27 , and a lower end of the push-up pin 95 is opposed to the bottom surface of the rotation drum 35 , i.e., the upper surface of the rotation plate 36 such that the lower end can abut against the bottom surface of the rotation drum 35 , i.e., the upper surface of the rotation plate 36 .
  • a push-up portion 97 projects from an upper surface of the lifting and lowering ring 94 . An upper end of the push-up portion 97 passes through the heater 30 and the susceptor 40 and is opposed to a lower surface of the central member 41 of the susceptor 40 . That is, the push-up pin 95 and the push-up portion 97 do not interfere with the rotation drum 35 and the susceptor 40 when the rotation drum 35 rotates.
  • the three push-up portions 97 standing on the lifting and lowering ring 94 support the central member 41 of the susceptor 40 from below, and float up the central member 41 from the first peripheral member 42 and the second peripheral member 43 . Since the central portion of the wafer 1 is placed on the central member 41 , the wafer 1 is floated up.
  • the wafer lifting and lowering apparatus 90 floats up the wafer 1 from the upper surface of the susceptor 40 , the insertion space is formed below the wafer 1 , i.e., between the lower surface of the wafer 1 and the upper surface of the susceptor 40 . Therefore, a fork-like tweezer 2 A of the wafer transfer apparatus is inserted into the insertion space of the wafer 1 from the wafer carry in-out port 16 . That is, like the above-mentioned third embodiment, the wafer 1 can be transferred by the mechanical wafer transfer apparatus. After the wafer 1 was transferred, as shown in FIG.
  • the rotation drum 35 and the heating unit 27 are lifted by the rotation shaft 34 and the support shaft 26 with respect to the processing chamber 11 , and the rotation drum 35 is lifted by the rotation shaft 34 with respect to the heating unit 27 .
  • the central member 41 supported by the push-up portion 97 of the lifting and lowering ring 94 is lowered with respect to the rotation drum 35 , and the central member 41 is fitted into the first peripheral member 42 .
  • the wafer 1 is moved onto the susceptor 40 , and the upper surface of the wafer 1 , the upper surface of the first peripheral member 42 and the upper surface of the second peripheral member 43 are flush with each other.
  • the wafer 1 is rotated by the rotation drum 35 and in this state, a film is formed on the wafer 1 , and the entire wafer 1 is processed uniformly.
  • the lifting and lowering ring 94 of the wafer lifting and lowering apparatus 90 is stopped together with the heating unit 27 , the lower end of the push-up pin 95 is separated from the bottom surface of the rotation drum 35 , and the upper end of the push-up portion 97 is separated from the lower surface of the susceptor 40 to permit the rotation of the rotation drum 35 .
  • the CVD films are formed on the wafers 1 by the single wafer-fed CVD apparatus 10 one by one.
  • the wafer lifting and lowering apparatus 90 lifting and lowering the wafer 1 by lifting and lowering the rotation drum 35 with respect to the heating unit 27 . Therefore, as compared with the first to third embodiments,in which the wafer 1 is automatically lifted and lowered in association with the lifting and lowering motion of the rotation drum 35 and the heating unit 27 with respect to the processing chamber 11 , the structure of the elevator for lifting and lowering the rotation shaft 34 and the support shaft 26 becomes slightly complicated.
  • the temperature sensor is not limited to the thermocouples, and another non-contact type temperature sensor may be used, or the temperature sensor may be omitted.
  • the substrate to be processed is not limited to the wafer, and the substrate to be processed may be a glass substrate for producing LCD (Liquid Crystal Display) apparatuses.
  • LCD Liquid Crystal Display
  • the present invention can be applied not only to the single wafer-fed cold wall type CVD apparatus, but also to a substrate processing apparatus such as a dry-etching apparatus.
  • the mechanical type substrate transfer apparatus can be used for transferring the substrate to be processed in and out.
  • the wafer is heated by the heating unit while rotating the substrate to be processed supported by the susceptor, thereby controlling the temperature distribution on the substrate to be processed uniformly over the entire wafer. Therefore, the substrate to be processed can be processed uniformly.
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US20050229849A1 (en) * 2004-02-13 2005-10-20 Applied Materials, Inc. High productivity plasma processing chamber
US20070026148A1 (en) * 2005-07-29 2007-02-01 Nuflare Technology, Inc. Vapor phase deposition apparatus and vapor phase deposition method
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US11359285B2 (en) * 2015-02-25 2022-06-14 Kokusai Electric Corporation Substrate processing apparatus, heater and method of manufacturing semiconductor device
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KR100491680B1 (ko) 2005-05-27

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