CN104641464A - 基板处理装置 - Google Patents
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Abstract
根据本发明的一个实施方式,一种用于处理基板的基板处理装置包括:具有开放式上部的主腔室,所述主腔室具有在其侧壁内限定的通道,使得基板能够进入/退出;腔室盖,所述腔室盖置于所述主腔室的开放式上部上,并形成与外部阻隔开的处理空间,用于执行处理;承座板,所述承座板具有含开放式下部的内部空间,并且所述基板置于所述承座板上;以及主加热器,所述主加热器可旋转地置于所述内部空间中,并与所述承座板间隔开,用于加热所述承座板。
Description
技术领域
本说明书中揭示的本发明是关于基板处理装置,尤其是关于通过使用置于加热器上方的承座板来改善基板内的处理温度分布的基板处理装置。
背景技术
在半导体设备制造工艺中,需要在高温下对基板的均匀热处理。该半导体制造工艺的示例可包括化学气相沉积以及硅外延成长处理,其中在反应器内的承座上放置之一半导体基板上以气态沉积材料层。该承座可通过电阻加热、射频加热以及红外线加热,加热到大约400℃至大约1,250℃的高温。另外,气体可通过该反应器,由此可在非常靠近基板的表面处,通过气态下气体的化学反应来发生沉积处理。由于该反应可以在该基板上沉积想要的产品。
半导体设备包括在硅基板上的多个层,这些层通过沉积处理沉积在该基板上。该沉积处理具有若干对于评估沉积层以及选择沉积方法来说相当重要的重要问题。
首先,重要问题的一个示例是每一沉积层的“品质”。“品质”代表成份、污染程度、缺陷密度以及机械和电气性能。沉积层的成份可根据沉积条件而改变,这对于获得指定成份来说非常重要。
其次,重要问题的另一个示例是晶片上的均匀厚度。尤其是,沉积在具有非平面形状(具有台阶部分)的图案上的层的厚度非常重要。在此,沉积膜的厚度是否均匀可通过台阶覆盖率(step coverage)来决定,该台阶覆盖率被定义为在台阶部分上所沉积的膜的最小厚度除以在图案上所沉积的膜的厚度的比。
有关沉积的其它问题为填充空间。这代表一个间隙填充,其中包括氧化物层的绝缘层填入金属线之间。提供间隙来将金属线彼此实体地且电气地隔离。在这些问题之间,均匀性是与沉积处理有关的非常重要的问题之一。不均匀层会导致金属线上的高电阻,从而增加机械上受损的可能性。
发明内容
技术问题
本发明提供一种基板处理装置,其中承座板安置在加热器上方,以间接加热基板,改善基板的温度梯度。
本发明还提供一种基板处理装置,其中上部加热器安置在腔室盖的上部,以初步加热处理气体,由此缩短处理反应时间。
参阅下面的详细说明以及附图,本发明的其它目的将变得明显。
解决方案
本发明的实施方式提供基板处理装置,在所述基板处理装置中执行关于基板的处理,所述基板处理装置包括:具有开放式上部的主腔室,所述主腔室具有在其侧壁内限定的通道,使得基板能够进入;腔室盖,所述腔室盖置于所述主腔室的开放式上部上,以提供相对外部密封的处理空间,在所述处理空间中执行处理;承座板,所述基板置于所述承座板上,所述承座板具有含开放式下部的内部空间;以及主加热器,所述主加热器可旋转地置于所述内部空间中,所述主加热器与所述承座板间隔开,以加热所述承座板。
在某些实施方式中,所述基板处理装置还可包括支撑构件,所述支撑构件置于所述承座板的开放式下部,以避免所述内部空间中的热扩散到外部。
在一些其它实施方式中,所述基板处理装置还可包括旋转轴,所述旋转轴置于所述主加热器的下部以支撑所述主加热器,所述旋转轴能够与所述主加热器一起旋转,其中,所述主加热器可包括:加热板,所述加热板置于所述旋转轴的上部,所述加热板插入到所述内部空间中;以及加热线,所述加热线置于所述加热板内,以加热所述承座板。
在一些其他实施方式中,所述主腔室可具有开放式下部,并且所述基板处理装置还可包括泵吸本体,所述泵吸本体置于所述主腔室的开放式下部,以提供内部安装空间,所述泵吸本体沿着所述旋转轴的周边设置。
在又一些其它实施方式中,所述主加热器与所述旋转轴可置于所述内部安装空间内,并且所述基板处理装置可包括:多个固定器,所述多个固定器支撑放置在其上的所述基板,所述固定器能够在上升位置与下降位置之间移动;升降轴,所述升降轴连接至所述固定器,以升降所述固定器;排放孔,所述排放孔沿着所述旋转轴周边限定在所述泵吸本体内,以将处理气体排放至外部;以及升降孔,所述升降轴插入到所述升降孔中,所述升降孔限定在所述排放孔的外部。
在再一些其它实施方式中,该基板处理装置另包括:所述基板处理装置还可包括:供气孔,所述供气孔限定在所述腔室盖的顶端表面内,用于将所述处理气体供应到处理空间中;扩散板,所述扩散板置于所述腔室盖的下端,所述扩散板具有扩散孔,所述处理气体通过这些扩散孔扩散到所述基板上;以及上部加热器,所述上部加热器置于所述腔室盖的上部,用于将要供应到所述处理空间中的所述处理气体初步进行加热。
在进一步实施方式中,所述基板处理装置还包括升降单元,用于升降所述基板,其中,所述升降单元包括:多个固定器,所述多个固定器支撑放置在其上的所述基板,所述固定器能够在上升位置与下降位置之间移动;以及升降轴,所述升降轴连接至所述固定器,用于升降所述固定器。
在又一些进一步的实施方式中,所述承座板可具有沿着其顶端表面的边缘限定的升降沟槽,以及所述固定器中的每一个可具有顶端表面,该顶端表面的高度在所述上升位置高于所述承座板的顶端表面的高度,并且所述固定器中的每一个在所述下降位置插入到所述升降沟槽中并与所述基板的底部表面分离开。
甚至在进一步的实施方式中,所述腔室盖可具有上部,所述上部具有向上突出的圆顶形或平板形。
有益效果
根据本发明的实施方式,承座板可置于加热器上方,以对基板间接进行加热,从而改善基板的温度梯度。另外,上方加热器可置于腔室盖的上部,以初步加热处理气体,由此缩短处理反应时间。
附图说明
图1为根据本发明实施方式的基板处理设备的示意图;
图2和图3为例示图1中升降单元的移动操作的视图;
图4为例示图1中固定器的配置状态的截面图;
图5为根据本发明第一修改例的基板处理装置的示意图;以及
图6为根据本发明第二修改例的基板处理装置的示意图。
具体实施方式
下文,将参照图1至图4来详细说明本发明的示例性实施方式。不过,本发明可以以不同形式来实施,并且不应被解释为限于本文阐述的实施方式。而是提供这些实施方式,以使得本公开充分和完整,并将本发明的范围全面地传达给本领域技术人员。在附图中,为了清晰图示起见而夸大了组件的形状。
虽然下面作为示例描述了沉积处理,但本发明可应用在包括沉积处理的许多基板处理过程。另外,对本领域技术人员来时明显的是,除了实施方式中所描述的基板W以外,本发明也适用于许多要处理的对象。
图1为根据本发明实施方式的基板处理装置的示意图。请参阅图1,基板处理装置1包括主腔室10以及腔室盖20。主腔室10具有开放的上侧。另外,在主腔室10的一侧限定出通道8,通过该通道8基板W可进入。可通过在主腔室10的一侧限定的通道8将基板W加载到主腔室10内或从主腔室10卸载。通道8外面设置有闸门阀5,通道8可通过闸门阀5开启或关闭。
腔室盖20连接至主腔室10的已开放的上侧,限定出与外界隔开的处理空间。连接构件15可置于主腔室10与腔室盖20之间,用于完全密封处理空间3。供气孔80穿过腔室盖20的顶壁。如此,通过供气孔80将处理气体供应到主腔室10中。供气孔80经由处理气体接口82连接至处理气体储存罐88,且阀门84可调整处理气体流入速率。
具有多个扩散孔75的扩散板70置于腔室盖20的下端表面。扩散板70可通过限定在相同高度的多个扩散孔75将处理气体均匀供应到基板W上。处理气体可包括氢气(H2)、氮气(N2)或其它惰性气体。另外,处理气体可包括前驱气体,例如硅烷(SiH4)或二氯硅烷(SiH2Cl2)。另外,处理气体可包括掺杂剂源气体,例如二硼烷(B2H6)或磷化氢(PH3)。扩散板70将通过供气孔80供应的处理气体扩散至基板W上。
上部加热器25对通过供气孔80导入的处理气体进行加热,上部加热器25置于腔室盖20的上部。腔室盖20可具有往上突出的圆顶形。另外,上部加热器25的形状可对应于腔室盖20的形状。置于上部加热器25内的加热线27可沿着腔室盖20的顶端表面被设置为彼此相隔预设距离。加热线27向腔室盖20施加热,以将从供气孔80供应的处理气体进行初步加热。初步加热的处理气体可通过扩散板70扩散到基板W上,以执行基板处理过程。如此,由于是将初步加热的处理气体供应至基板W上,因此缩短了处理气体与基板W之间的处理反应时间,以提高生产力。
主加热器40置于主腔室10内。在主加热器40上方安置与主加热器40间隔开的承座板30。承座板30具有内部空间4,该内部空间4具有开放式下部。支撑构件38置于承座板30的开放式下部,以避免主加热器40的热量扩散到内部空间4的外部。贯穿孔41限定在主腔室10的中央部分的下侧中。旋转轴47插入到贯穿孔41内。旋转轴47连接到主加热器40的下部,用以支撑主加热器40。旋转轴47连接至驱动部件49,以与主加热器40一起转动。
主加热器40包括加热板45和加热线42。加热板45置于旋转轴47的上部上,并且插入到承座板30的内部空间4内。加热线42可置于加热板45的顶端表面内。也就是说,主加热器40对在上面相隔开的承座板30进行加热,并且承座板30将从主加热器40接收的热量传递给基板W。对承座板30供热的内部空间4可通过承座板30以及支撑构件38与处理空间3隔开。另外,轴承90可置于旋转轴47的下部。
近些年来,随着制造具有大约300mm(大约12英吋)至大约450mm(大约18英吋)尺寸的大型基板W,加热器尺寸随之增加。如此,会难以在基板上实现均匀的温度分布。也就是,在将基板W加热至处理温度时,本发明采用运用承座板的间接加热法,而不采用直接加热法,以改善加热器的停机或效能降低以及加热器的局部不平衡的辐射热。如此,将由于主加热器40的局部温度变化导致的基板W的温度变化降至最低。由于主加热器40可由旋转轴47旋转,可有效避免基板W温度的不均匀。
另外,可将坝塔尔合金(Kanthal)加热器用作上部加热器27与主加热器42。坝塔尔合金可以为Fe-Cr-Al合金,其中铁用作主材料。如此,坝塔尔合金可具有高耐热性与高电阻。此外,因为坝塔尔合金加热器的坝塔尔合金加热线形状可自由修改,相较于现有的灯泡加热方法,可使辐射热更均匀地分布与传递。
如图1所示,主腔室10具有开放式下部。中空泵吸本体60置于主腔室10的开放式下部处。泵吸本体60沿着旋转轴47的四周放置。在泵吸本体60内限定有排放孔62。排放孔62可沿着旋转轴47的四周限定。未反应气体或反应产物可通过排放孔62排出。排气泵65连接至排气口67和排放孔62,以强迫排出未反应气体或反应产物。
排放孔62限定在贯穿孔41外部。另外,排放孔62可具有沿着贯穿孔41四周的圆环形。也就是,供气孔80和排放孔62限定在基板处理装置1的彼此相反的侧面。如此,可将通过上侧供应的处理气体朝着在下侧限定的排放孔62排出,以改善处理气体的流动分布,由此提高反应能力。
如上所述,基板W通过通道8被传送至基板处理装置1内,并且升降单元50支撑基板W,朝向承座板30升降基板W。升降单元50包括:固定器55,该固定器55支撑基板W;以及升降轴53,该升降轴53连接至固定器55并且与固定器55一起升降。传送的基板W置于固定器55上。升降轴53置于固定器55的下部,并且升降孔51限定在主腔室10的底部表面内。升降孔51限定在排放孔62外部,并且升降轴53沿着升降孔51插入。升降轴53连接至马达58,并且与固定器55一起升降。随着固定器55朝向在承座板30顶端表面边缘内限定的升降沟槽35下降,移动承座板30上的基板W。另外,可提供多个固定器55,以稳固支撑基板W并朝向承座板30传送基板。
图2和图3为例示图1中升降单元的移动操作的视图。请参阅图2和图3,通过通道8传送到基板处理装置1中的基板W被置于固定器55的上部。如上所述,升降轴53置于固定器55的下部。另外,升降轴53连接至马达58,并且与固定器55一起升降。传送至固定器55上部的基板W随着升降轴53下降而朝着承座板30下降。固定器55坐落在承座板30的升降沟槽35内,然后将基板W传送至承座板30的中央部分,以便执行有关基板W的处理。
另外,升降单元50可具有上升位置与下降位置。在上升位置,固定器55的顶端表面高于承座板30的顶端表面。另外在下降位置,固定器55插入到升降沟槽35中并且与基板W的底部表面分离开,以将基板W移动到承座板30上。
图4为例示图1中固定器的配置状态的截面图。请参阅图4,可提供多个固定器55。多个固定器55可在三个方向支撑基板W,以将基板传送至承座板30。承座板30的升降沟槽35可用与固定器55的沟槽相同的编号来限定。固定器55可分别插入到升降沟槽35中,以将基板W传送至承座板30的中央部分。
尽管参照示例性实施方式详细描述了本发明,但本发明还可以按多种不同的形式来实施。因此,所附的权利要求书的技术思想和范围并不限于这些优选的实施方式。
本发明的模式
下文将参照图5和图6详细描述本发明的示例性实施方式。然而,本发明可以按不同的形式来实施并且不应被解释为限于本文阐述的实施方式。而是提供这些实施方式,以使得本公开充分和完整,并将本发明的范围全面地传达给本领域技术人员。在附图中,为了清晰起见而夸大了组件的形状。
图5为根据本发明第一修改例的基板处理装置的示意图。下文将只描述与根据前述实施方式的特征不同的特征。因此,本文中省略的说明可由上述内容可取代。请参阅图5,腔室盖20置于主腔室10的开放式上部。腔室盖20可具有平板形状,其中开放式下部与主腔室10连通。在腔室盖20与主腔室10之间设置有连接构件15,该连接构件15将腔室盖20与主腔室10之间的空间完全密封,与外部空间隔开。扩散板70置于腔室盖20的下端。
另外,上部加热器25置于腔室盖20上方,并且其形状对应于腔室盖20的形状。另外,上部加热器25与腔室盖20隔开预设距离。与参考图1描述的前述实施方式比较时,根据第一修改例,腔室盖20的侧部可以设置为相对较低的高度,以缩小处理空间。结果,可提高基板W与处理气体之间的反应性,以改善处理气体的反应率。
图6为根据本发明第二修改例的基板处理装置的示意图。请参阅图6,腔室盖20连接至主腔室10的上部。另外,腔室盖20封闭主腔室20的开放式上部,以提供其中执行与基板W相关的处理的处理空间3。供气孔80限定在腔室盖20的上部内,用于将处理气体供应到处理空间3中。然后,处理气体经喷孔78被喷涂到基板W上,喷孔78被限定在置于腔室盖20下方的喷头77内。扩散板70置于供气孔80与喷头77之间,用于初步扩散通过供气孔80导入、然后流向喷头77的处理气体。初步扩散的处理气体可在通过喷头77的喷孔78时再次扩散,以流向基板W。因此,第二修改例可有效地在基板W上形成均匀沉积层,因为处理气体在相对低温处理下朝着基板W两次进行分散。
尽管参照示例性实施方式详细描述了本发明,但本发明还可以按多种不同的形式来实施。因此,所附的权利要求书的技术思想和范围并不限于这些优选的实施方式。
工业应用性
本发明可应用于各种类型的半导体制备装置和半导体制备方法。
Claims (9)
1.一种基板处理装置,在所述基板处理装置中执行关于基板的处理,所述基板处理装置包括:
具有开放式上部的主腔室,所述主腔室具有在其侧壁内限定的通道,使得基板能够进入;
腔室盖,所述腔室盖置于所述主腔室的开放式上部上,以提供相对外部密封的处理空间,在所述处理空间中执行处理;
承座板,所述基板置于所述承座板上,所述承座板具有含开放式下部的内部空间;以及
主加热器,所述主加热器可旋转地置于所述内部空间中,所述主加热器与所述承座板间隔开,以加热所述承座板。
2.根据权利要求1所述的基板处理装置,所述基板处理装置还包括支撑构件,所述支撑构件置于所述承座板的开放式下部,以避免所述内部空间中的热扩散到外部。
3.根据权利要求2所述的基板处理装置,所述基板处理装置还包括旋转轴,所述旋转轴置于所述主加热器的下部以支撑所述主加热器,所述旋转轴能够与所述主加热器一起旋转,
其中,所述主加热器包括:
加热板,所述加热板置于所述旋转轴的上部,所述加热板插入到所述内部空间中;以及
加热线,所述加热线置于所述加热板内,以加热所述承座板。
4.根据权利要求3所述的基板处理装置,其中,所述主腔室具有开放式下部,并且
所述基板处理装置还包括泵吸本体,所述泵吸本体置于所述主腔室的开放式下部,以提供内部安装空间,所述泵吸本体沿着所述旋转轴的周边设置。
5.根据权利要求4所述的基板处理装置,其中,所述主加热器与所述旋转轴置于所述内部安装空间内,并且
所述基板处理装置包括:
多个固定器,所述多个固定器支撑放置在其上的所述基板,所述固定器能够在上升位置与下降位置之间移动;
升降轴,所述升降轴连接至所述固定器,以升降所述固定器;
排放孔,所述排放孔沿着所述旋转轴周边限定在所述泵吸本体内,以将处理气体排放至外部;以及
升降孔,所述升降轴插入到所述升降孔中,所述升降孔限定在所述排放孔的外部。
6.根据权利要求1所述的基板处理装置,所述基板处理装置还包括:
供气孔,所述供气孔限定在所述腔室盖的顶端表面内,用于将所述处理气体供应到处理空间中;
扩散板,所述扩散板置于所述腔室盖的下端,所述扩散板具有扩散孔,所述处理气体通过这些扩散孔扩散到所述基板上;以及
上部加热器,所述上部加热器置于所述腔室盖的上部,用于将要供应到所述处理空间中的所述处理气体初步进行加热。
7.根据权利要求1所述的基板处理装置,所述基板处理装置还包括升降单元,用于升降所述基板,
其中,所述升降单元包括:
多个固定器,所述多个固定器支撑放置在其上的所述基板,所述固定器能够在上升位置与下降位置之间移动;以及
升降轴,所述升降轴连接至所述固定器,用于升降所述固定器。
8.根据权利要求7所述的基板处理装置,其中,所述承座板具有沿着其顶端表面的边缘限定的升降沟槽,以及
所述固定器中的每一个具有顶端表面,该顶端表面的高度在所述上升位置高于所述承座板的顶端表面的高度,并且所述固定器中的每一个在所述下降位置插入到所述升降沟槽中并与所述基板的底部表面分离开。
9.根据权利要求1所述的基板处理装置,其中,所述腔室盖具有上部,所述上部具有向上突出的圆顶形或平板形。
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- 2012-09-17 KR KR1020120102925A patent/KR101440307B1/ko active IP Right Grant
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2013
- 2013-08-16 TW TW102129433A patent/TWI512845B/zh active
- 2013-09-17 US US14/427,333 patent/US20150252476A1/en not_active Abandoned
- 2013-09-17 CN CN201380048248.9A patent/CN104641464B/zh active Active
- 2013-09-17 WO PCT/KR2013/008433 patent/WO2014042488A2/ko active Application Filing
- 2013-09-17 JP JP2015531866A patent/JP6009677B2/ja active Active
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JPH0766139A (ja) * | 1993-08-30 | 1995-03-10 | Ryoden Semiconductor Syst Eng Kk | 化学気相成長装置 |
US20020017363A1 (en) * | 2000-03-24 | 2002-02-14 | Seiyo Nakashima | Substrate processing apparatus and substrate processing method |
US20040097063A1 (en) * | 2001-03-30 | 2004-05-20 | Takeshi Sakuma | Single wafer processing method and system for processing semiconductor |
CN1643322A (zh) * | 2002-07-15 | 2005-07-20 | 阿维扎技术公司 | 热处理系统和可成形的垂直腔 |
JP2011009500A (ja) * | 2009-06-26 | 2011-01-13 | Nuflare Technology Inc | 半導体製造方法および半導体製造装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN111863699A (zh) * | 2019-04-28 | 2020-10-30 | 北京北方华创微电子装备有限公司 | 承载装置及工艺腔室 |
CN111863699B (zh) * | 2019-04-28 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 承载装置及工艺腔室 |
CN111979528A (zh) * | 2019-05-24 | 2020-11-24 | 东泰高科装备科技有限公司 | 一种旋转支撑装置及mocvd系统 |
Also Published As
Publication number | Publication date |
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JP2015529983A (ja) | 2015-10-08 |
TWI512845B (zh) | 2015-12-11 |
WO2014042488A3 (ko) | 2014-05-08 |
JP6009677B2 (ja) | 2016-10-19 |
US20150252476A1 (en) | 2015-09-10 |
KR101440307B1 (ko) | 2014-09-18 |
WO2014042488A2 (ko) | 2014-03-20 |
CN104641464B (zh) | 2017-03-08 |
KR20140037385A (ko) | 2014-03-27 |
TW201413829A (zh) | 2014-04-01 |
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