TWI596692B - 應用於半導體設備之組裝裝置 - Google Patents

應用於半導體設備之組裝裝置 Download PDF

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TWI596692B
TWI596692B TW105118226A TW105118226A TWI596692B TW I596692 B TWI596692 B TW I596692B TW 105118226 A TW105118226 A TW 105118226A TW 105118226 A TW105118226 A TW 105118226A TW I596692 B TWI596692 B TW I596692B
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ceiling
semiconductor device
reaction chamber
assembly device
lifting
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TW105118226A
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TW201743393A (zh
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黃燦華
建寶 黃
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漢民科技股份有限公司
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Priority to TW105118226A priority Critical patent/TWI596692B/zh
Priority to US15/608,057 priority patent/US20170358463A1/en
Priority to CN201710419905.6A priority patent/CN107481955B/zh
Priority to KR1020170070768A priority patent/KR20200001634A/ko
Priority to US15/647,639 priority patent/US10418264B2/en
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Description

應用於半導體設備之組裝裝置
本發明係有關一種組裝裝置,特別是關於一種應用於半導體設備之自動化組裝裝置 。
在薄膜沉積製程中, 薄膜的生長過程係藉由在反應腔內利用噴射器將氣源氣體水平噴射至承載板(susceptor)之上進行混合,再利用加熱所引起的物理或化學反應,從而在晶圓上沉積薄膜。
其中,承載板對相面須裝置一頂棚(ceiling),其功能主要為導流和控溫。導流功能之目的係為減緩亂流之形成,並導引亂流發生於成長區之後;而控溫功能之目的係為防止製程副產物(如:髒污顆粒) 沉積附著於頂棚表面上,因為倘若頂棚溫度控制不良時,將使得附著於頂棚之表面上的沉積副產物掉落於晶圓上。換言之,當頂棚溫度控制良好,則沉積副產物會較少形成於頂棚表面上,也相對不易掉落於晶圓之上,從而可提升製程晶圓的良率。
請參照第一A圖及第一B圖,其分別繪示一般傳統半導體設備中之頂棚與反應室頂蓋(chamber lid) 的配置結構立體圖與側視圖。如圖所示之傳統半導體設備100,目前習用的技術係手動方式將頂棚110鎖接固定於反應室頂蓋120上。更具體地說,頂棚110係藉由手動上索的方式將中心固定器130鎖固至反應室頂蓋120之中心螺孔內。此外,由於頂棚110與反應室頂蓋120之間必須具有間隙(Gap),而間隙大小一般係根據反應氣體的組成與流量予以對應調整,來調控反應室中的製程溫度,因此頂棚110之邊緣處係藉由抵接至一間隙環140,予以固定至反應室頂蓋120上。其中,間隙環140的厚度係用以決定頂棚110與反應室頂蓋120之間的間隙大小。
然而,於上述一般傳統手動上鎖的裝載固定方式, 操作期間必須至少兩位操作員同時進行作業,方能穩固地將頂棚110鎖接固定於反應室頂蓋120;反之亦然,當欲將頂棚110自反應室頂蓋120卸下清洗時,亦同時需要至少兩位操作員進行手動反向卸載作業。如此一來,在頂棚110之裝載及卸載作業中,皆需要耗用相當多的人力與時間,而且當進行製程中,其僅有中心固定器130於中央一處固定抵住頂棚110用以提供支撐。
因此,亟需發展出一種應用於半導體設備之自動化組裝裝置,以提供頂棚於裝卸操作上之效率及便利性。
鑑於上述,本發明實施例的目的之一在於提出一種應用於半導體設備之自動化組裝裝置,來降低操作繁複度及人力成本,而可有效大幅提升使用效率及便利性。
根據本發明實施例,一種應用於半導體設備之組裝裝置,其包含一反應室頂蓋(chamber lid)、一頂棚(ceiling)、一懸吊部及一驅動部。頂棚位於反應室頂蓋下方。懸吊部係設置穿透於反應室頂蓋,且用以扣接頂棚。驅動部設置於反應室頂蓋上方並連接懸吊部,並用以驅動懸吊部,使頂棚與反應室頂蓋相結合或分離。驅動部包含一升降單元及一旋轉單元。升降單元用以升降懸吊部,旋轉單元則用以旋轉懸吊部。
請參考第二A圖及第二B圖,其中第二A圖與第二B圖顯示本發明一實施例之一種應用於半導體設備之組裝裝置,其進行組裝頂棚至反應室頂蓋的示意結構剖面圖。如圖所示,一種應用於半導體設備之組裝裝置200,其包含一反應室頂蓋210、一頂棚220、一懸吊部230及一驅動部240。頂棚220位於反應室頂蓋210下方。懸吊部230係設置穿透於反應室頂蓋210,並且用以扣接頂棚。驅動部240設置於反應室頂蓋210上方並連接懸吊部230,且驅動部240用以驅動懸吊部230,使頂棚220與反應室頂蓋210相結合或分離。其中,驅動部240包含一升降單元241及一旋轉單元246。升降單元241用以升降懸吊部230,而旋轉單元246則用以旋轉懸吊部230。
更進一步地說,當驅動部240驅動懸吊部230,使頂棚220與反應室頂蓋210相結合時,升降單元241係先下降懸吊部230以穿越頂棚220至頂棚220下方,而旋轉單元246則即對應旋轉懸吊部230,致使懸吊部230扣接於頂棚220,接著升降單元241上升懸吊部230,以抬升頂棚220並使其定位於反應室頂蓋210的下表面。
於本實施例中,懸吊部230包含複數個第一懸吊組件231,分別設置於頂棚220之表面上方。每一第一懸吊組件231包含第一支撐桿231a及第一鉤扣件231b,且第一鉤扣件231b係設置於第一支撐桿231a之一端。再者,如圖所示,每一第一鉤扣件231b可形成具有一T字型外觀,其中每一第一鉤扣件231b之一端係對應設置連接於每一第一支撐桿231a之一端,並且第一鉤扣件231b之另一端係朝向頂棚220。
接著,請同步參照第二A至二C圖,其中第二C圖係繪示第二A及二B圖之組裝裝置200之頂棚220與懸吊部230的局部圖。如圖所示,於本實施例中,頂棚220之表面可具有複數個穿孔222,分別設置以對應第一懸吊組件231。然而,藉由第一鉤扣件231b之T字型外觀及頂棚220之穿孔222的對應配置,當驅動部240驅動懸吊部230使頂棚220與反應室頂蓋210相結合時,升降單元241下降第一支撐桿231a至頂棚220下方,使得每一第一鉤扣件231b穿越過每一對應穿孔222後,旋轉單元246則可旋轉第一支撐桿231a,而讓第一鉤扣件231b扣接至頂棚220,接著升降單元241即可上升第一支撐桿231a,從而讓第一鉤扣件231b得以抬升頂棚220,並予以定位於反應室頂蓋210的下表面。
再者,頂棚220之每一穿孔222可更對應包含一旋轉溝槽225,使得當旋轉單元246旋轉第一支撐桿231a時,第一鉤扣件231b則可對應旋轉於旋轉溝槽225內,並且扣接於旋轉溝槽225之頂面。
然而,當第一鉤扣件231b對應扣接於每一旋轉溝槽225之頂面時,第一鉤扣件231b的厚度可小於或等於旋轉溝槽225的深度,因此當組接升降頂棚220至反應室頂蓋210過程中,第一鉤扣件231b之底面係與頂棚210之下表面可為同一平面,或第一鉤扣件231b之底面係隱沒於頂棚210之下表面,從而讓第一鉤扣件231b不會凸設於頂棚210之下表面外。
接著,請繼續參照第二A至二C圖,其中頂棚220亦可更包含複數個墊件224,而每一墊件224係嵌設形成於頂棚220之上表面,並且每一墊件224係分別對應連接旋轉溝槽225其中之一 。而且,於本實施例中,墊件224係設置以對應圍設於穿孔222。如此一來,當驅動部240將頂棚220定位至反應室頂蓋210的下表面時,每一墊件224的頂面將抵接至反應室頂蓋210的下表面,從而讓頂棚220與反應室頂蓋210之間產生一間隙。
然而,墊件 224與頂棚220係可依據實際設計或製程需求,而調整選用墊件 224之整體厚度,使得墊件224之頂面係高於或等高於頂棚220之上表面,且墊件 224亦可選擇為一體成形或組合式構造。更進一步地說當墊件224之頂面係高於頂棚220之上表面時,墊件224之頂面與頂棚220之上表面的間距則可介於約0.1釐米(mm)至約 0.3釐米(mm),而其可依據不同製程條件或反映氣體,而予以調整適切之間距高度。舉例而言,當在磷化砷(AsP)半導體製程中,墊件224之頂面與頂棚220之上表面的間距為約 0.3釐米,使得頂棚220之上表面與反應室頂蓋210之下表面兩者於製程中的間隙可以維持為0.3釐米,而當在氮化物(Nitride)半導體製程中,墊件224之頂面與頂棚220之上表面的間距則為約 0.1釐米,使得頂棚220之上表面與反應室頂蓋210之下表面兩者於製程中的間隙可以維持為0.1釐米。
雖然第二A圖及第二B圖所示本案的組裝裝置200,其係以四個第一懸吊組件231、四個對應穿孔222及四個對應墊件224作為示例,然而熟悉本領域技藝者可輕易理解到本案不以此為限,組裝裝置200所搭配使用的懸吊部230所包含的第一懸吊組件231、穿孔222及墊件224之數量係可為至少兩個以上,並且彼此間均衡設置,從而避免頂棚220於升降過程中產生水平位移或轉動。
接著,請參照第二D圖,其繪示本發明另一實施例之懸吊部的局部結構示意剖面圖。如圖所示,每一第一懸吊組件231可更包含第一緩衝件231c,設置套接於第一支撐桿231a之另一端,用以當驅動部240驅動第一支撐桿231a及第一鉤扣件231b抬升頂棚220,並予以固定至反應室頂蓋210的下表面時,第一緩衝件231c可以大幅有效緩衝減少第一鉤扣件231b急遽對頂棚220給予過多的衝擊應力,從而避免頂棚220於抬升固定過程中產生破裂。然而,於一實施例中,第一緩衝件231c可為一彈簧。
請參照第二E圖,其繪示本發明另一實施例之頂棚220與懸吊部230之第二懸吊組件232的組接局部圖。如圖所示,懸吊部230可包含複數個第二懸吊組件232,其中每一第二懸吊組件232包含一第二支撐桿232a與一第二鉤扣件232b,且第二支撐桿232a與第二鉤扣件232b可形成具有一L字型外觀,其中第二鉤扣件232b係設置位於第二支撐桿232a之一端,並且第二鉤扣件232b係朝向頂棚220。如此一來,懸吊部230之第二懸吊組件232可藉由驅動部240的升降與旋轉驅動操作,進而可從頂棚220的邊緣處,予以鉤接、抬升並固定至反應室頂蓋210的下表面。同樣地,頂棚220的邊緣處亦可對應具有旋轉溝槽225,用以當升降單元241下降第二支撐桿232a至頂棚220時,旋轉單元246可旋轉第二支撐桿232a時,使第二鉤扣件232b旋轉至頂棚220下方,進而可對應扣接於旋轉溝槽225之頂面,以避免對製程區產生影響。此外,每一第二支撐桿232a之另一端亦可具有一第二緩衝件232c,用以當抬升頂棚220以定位於反應室頂蓋210的下表面時,緩衝減低頂棚220所受到之衝擊力。再者,關於本發明所揭示之懸吊部230,其係可根據實際製程設計需求,而予以分別選擇第一懸吊組件231與第二懸吊組件232其中之一並獨立配置使用,抑或將第一懸吊組件231與第二懸吊組件232相互搭配組合使用。
請參照第二F圖,其繪示第二A圖及第二B圖中之組裝裝置200之驅動部240的立體結構圖。如圖所示,升降單元241係設置以升降第一懸吊組件231,其中升降單元241可包含一升降基板242、至少二皮帶輪243、一傳動皮帶244及一驅動馬達245。升降基板242設置於反應室頂蓋210上方,其中第一懸吊組件231中之每一第一支撐桿231a之另一端係固定連接於升降基板242。更具體地說,第一支撐桿231a係穿設於反應室頂蓋210,並與升降基板242同步連動升降。皮帶輪243係分別對稱設置於升降基板242上。其中,於一實施例中,皮帶輪243的中心軸248係穿接於升降基板242,且皮帶輪243的中心軸248之一端亦可係穿伸於反應室頂蓋210,並可與反應室頂蓋210相螺合。傳動皮帶244則是繞設於兩皮帶輪243之間。驅動馬達245係設置於升降基板242上,用以透過傳動皮帶244驅動二皮帶輪243,予以升降基板242及驅動第一支撐桿231a的上升或下降作動。
請繼續參照第二F圖,旋轉單元246可包含至少三氣動缸247,其中每一氣動缸247對應設置於每一第一支撐桿231a之另一端上方,用以轉動每一第一支撐桿231a及第一鉤扣件231b。然而,雖然上述實施例係以第一懸吊組件231作為示例,惟本發明不以此為限,於本發明其他實施例中,第二懸吊組件232亦可對應適用之,甚至可依實際需求而將第一懸吊組件231與第二懸吊組件232予以組合搭配置應用之。
請參照第三A圖及第三B圖,其繪示本發明另一實施例之一種應用於半導體設備之組裝裝置,其進行卸載頂棚的示意圖。其中,驅動部240亦可用以驅動懸吊部230,使得頂棚220自反應室頂蓋210分離。更具體地說,升降單元241可藉由驅動馬達245及傳動皮帶244驅動皮帶輪243以下降升降基板242,進而連動下降第一支撐桿231a,致使頂棚220得以自反應室頂蓋210分離並下移至承載板(susceptor)250之上表面後,接著旋轉單元246則可透過氣動缸247,予以旋轉第一支撐桿231a,致使每一第一鉤扣件231b自旋轉溝槽225轉出以對應於穿孔222,接著升降單元241則可再透過驅動馬達245抬升第一支撐桿231a,並讓第一鉤扣件231b得以穿離穿孔222。
請同步參照第三C圖與第三D圖,其係繪示本發明另一實施例之一種應用於半導體設備之組裝裝置於進行自動化更替頂棚的示意圖。如圖所示,組裝裝置200係配置於一製程反應區300,其中反應室頂蓋210係設置於反應室260的頂部,而且組裝裝置200可更包含第一機械手臂270A及第二機械手臂270B。然而,反應室260可更具有一門閥262,其中當反應室260中所進行的半導體製程完成後,且頂棚220A自反應室頂蓋210下移卸載至承載基座250之後,即可透過開啟門閥262,而讓第一機械手臂270A將頂棚220A移出至一置放區500進行清潔。接著,再經由第二機械手臂270B將暫存於備位區400中的頂棚220B,傳送至反應室260之承載基座250上,進而讓懸吊部230將頂棚220B組裝至反應室頂蓋210,並同時關閉門閥262,以進行另一梯次的半導體製程。如此一來,藉由上述自動化的頂棚組裝及更替機制,即可大幅有效地降低組裝人力,及節省反應室降溫的等待時間。此外,雖然上述實施例及其對應圖示第三A-三D圖皆係以第一懸吊組件231作為示例,惟本發明不以此為限,於其他實施例中,第二懸吊組件232亦可對應適用之,甚至可依實際需求而將第一懸吊組件231與第二懸吊組件232予以組合搭配置應用之。
以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。
100‧‧‧傳統半導體設備
110‧‧‧頂棚
120‧‧‧反應室頂蓋
130‧‧‧中心固定器
140‧‧‧間隙環
200‧‧‧組裝裝置
210‧‧‧反應室頂蓋
220‧‧‧頂棚
222‧‧‧穿孔
224‧‧‧墊件
225‧‧‧旋轉溝槽
230‧‧‧懸吊部
231‧‧‧第一懸吊組件
231a‧‧‧第一支撐桿
231b‧‧‧第一鉤扣件
231c‧‧‧第一緩衝件
232‧‧‧第二懸吊組件
232a‧‧‧第二支撐桿
232b‧‧‧第二鉤扣件
232c‧‧‧第二緩衝件
240‧‧‧驅動部
241‧‧‧升降單元
242‧‧‧升降基板
243‧‧‧皮帶輪
244‧‧‧傳動皮帶
245‧‧‧驅動馬達
246‧‧‧旋轉單元
247‧‧‧氣動缸
248‧‧‧中心軸
250‧‧‧承載基座
260‧‧‧反應室
262‧‧‧門閥
270A‧‧‧第一機械手臂
270B‧‧‧第二機械手臂
200A‧‧‧頂棚
200B‧‧‧頂棚
300‧‧‧製程反應區
400‧‧‧備位區
500‧‧‧置放區
第一A圖及第一B圖係繪示一般傳統半導體設備中之頂棚與反應室頂蓋的配 置結構立體圖及側視圖。 第二A圖與第二B圖係繪示本發明一實施例之一種應用於半導體設備之組裝 裝置,其進行組裝頂棚至反應室頂蓋的示意結構剖面圖。 第二C圖係繪示第二A圖及第二B圖中之組裝裝置之頂棚與懸吊部的示意 局部圖。 第二D圖係繪示本發明另一實施例之懸吊部的局部結構示意剖面圖。 第二E圖係繪示本發明另一實施例之頂棚與懸吊部的組接示意局部圖。 第二F圖係繪示第二A圖及第二B圖中之組裝裝置之驅動部的立體結構 圖。 第三A圖及第三B圖係繪示本發明另一實施例之一種應用於半導體設備之組 裝裝置,其進行卸載頂棚的示意圖。 第三C圖與第三D圖係繪示本發明另一實施例之一種應用於半導體設備之組 裝裝置於進行自動化更替頂棚的示意圖。
200‧‧‧組裝裝置
210‧‧‧反應室頂蓋
220‧‧‧頂棚
222‧‧‧穿孔
224‧‧‧墊件
225‧‧‧旋轉溝槽
230‧‧‧懸吊部
231‧‧‧第一懸吊組件
231a‧‧‧第一支撐桿
231b‧‧‧第一鉤扣件
240‧‧‧驅動部
241‧‧‧升降單元
242‧‧‧升降基板
243‧‧‧皮帶輪
244‧‧‧傳動皮帶
245‧‧‧驅動馬達
246‧‧‧旋轉單元
247‧‧‧氣動缸
248‧‧‧中心軸

Claims (21)

  1. 一種應用於半導體設備之組裝裝置,包含:  一反應室頂蓋(chamber lid); 一頂棚(ceiling),位於該反應室頂蓋下方; 一懸吊部,設置穿透於該反應室頂蓋,用以扣接該頂棚;及 一驅動部,設置於該反應室頂蓋上方並連接該懸吊部,用以驅動該懸吊部,使該頂棚與該反應室頂蓋相結合或分離,其中該驅動部包含: 一升降單元,用以升降該懸吊部;及 一旋轉單元,用以旋轉該懸吊部。
  2. 如申請專利範圍第1項所述之應用於半導體設備之組裝裝置,其中當該驅動部驅動該懸吊部,使該頂棚與該反應室頂蓋相結合時,該升降單元下降該懸吊部穿越該頂棚至該頂棚下方,接著該旋轉單元旋轉該懸吊部,致使該懸吊部扣接該頂棚,接著該升降單元上升該懸吊部,以抬升該頂棚並定位於該反應室頂蓋的下表面。
  3. 如申請專利範圍第1項所述之應用於半導體設備之組裝裝置,其中該懸吊部包含複數個第一懸吊組件,設置於該頂棚之表面上方,且每一該些第一懸吊組件包含: 一第一支撐桿;及 一第一鉤扣件,設置於該第一支撐桿之一端。
  4. 如申請專利範圍第3項所述之應用於半導體設備之組裝裝置,其中當該驅動部驅動該懸吊部使該頂棚與該反應室頂蓋相結合時,該升降單元下降該些第一支撐桿至該頂棚下方,該旋轉單元即旋轉該些第一支撐桿,致使該些第一鉤扣件扣接該頂棚,接著該升降單元上升該些第一支撐桿,以抬升該頂棚並定位於該反應室頂蓋的下表面。
  5. 如申請專利範圍第3項所述之應用於半導體設備之組裝裝置,其中每一該第一鉤扣件形成具有一T字型外觀。
  6. 如申請專利範圍第3項所述之應用於半導體設備之組裝裝置,其中該頂棚具有複數個穿孔,分別設置以對應該些第一懸吊組件。
  7. 如申請專利範圍第6項所述之應用於半導體設備之組裝裝置,其中當該升降單元下降每一該些第一支撐桿,使每一該些第一鉤扣件對應穿越過每一該些穿孔後,該旋轉單元旋轉每一該些第一支撐桿,致使每一該些第一鉤扣件扣接該頂棚。
  8. 如申請專利範圍第6項所述之應用於半導體設備之組裝裝置,其中該頂棚之每一該些穿孔更包含一旋轉溝槽,當該旋轉單元旋轉該些第一支撐桿時,每一該些第一鉤扣件對應旋轉於旋轉溝槽內,以扣接於每一該些旋轉溝槽之頂面。
  9. 如申請專利範圍第8項所述之應用於半導體設備之組裝裝置,其中每一該些第一鉤扣件的厚度小於或等於該些旋轉溝槽的深度。
  10. 如申請專利範圍第6項所述之應用於半導體設備之組裝裝置,其中該頂棚更包含複數個墊件,設置於該頂棚之上表面,並且每一該些墊件係對應連接該些旋轉溝槽其中之一  。
  11. 如申請專利範圍第10項所述之應用於半導體設備之組裝裝置,其中該些墊件與該頂棚係一體成形或組合式構造。
  12. 如申請專利範圍第10項所述之應用於半導體設備之組裝裝置,其中每一該些墊件之頂面係高於或等高於該頂棚之上表面,且每一該些墊件之頂面與頂棚之上表面的間距介於約0.1釐米(mm)至約0.3釐米(mm)之間。
  13. 如申請專利範圍第1項所述之應用於半導體設備之組裝裝置,其中該懸吊部包含複數個第二懸吊組件,設置於該頂棚之表面邊緣上方,且每一該些第二懸吊組件包含: 一第二支撐桿;及 一第二鉤扣件,設置於該第二支撐桿之一端。
  14. 如申請專利範圍第13項所述之應用於半導體設備之組裝裝置,其中每一該些第二支撐桿與每一該些第二鉤扣件形成具有一L字型外觀。
  15. 如申請專利範圍第13項所述之應用於半導體設備之組裝裝置,其中每一該些第二懸吊組件係從該頂棚之邊緣處,予以扣接抬升。
  16. 如申請專利範圍第3項所述之應用於半導體設備之組裝裝置,其中每一該些第一支撐桿之另一端具有一第一緩衝件,用以當抬升該頂棚以定位於該反應室頂蓋的下表面時,緩衝減低該頂棚所受到之衝擊力。
  17. 如申請專利範圍第16項所述之應用於半導體設備之組裝裝置,其中該第一緩衝件為一彈簧。
  18. 如申請專利範圍第3項所述之應用於半導體設備之組裝裝置,其中該升降單元,包含: 一升降基板,設置於該反應室頂蓋上方,其中每一該些第一支撐桿之另一端係固定連接於該升降基板; 至少二皮帶輪,設置於該升降基板上; 一傳動皮帶,繞設於該至少二皮帶輪之間;及 一驅動馬達,設置於該升降基板上,用以透過該傳動皮帶驅動該至少二皮帶輪,進而使該升降基板及該些第一支撐桿上升或下降。
  19. 如申請專利範圍第18項所述之應用於半導體設備之組裝裝置,其中每一該些皮帶輪的中心軸穿接於該升降基板,且每一該些皮帶輪的中心軸之一端係穿伸於該反應室頂蓋,並與反應室頂蓋相螺合。
  20. 如申請專利範圍第3項所述之應用於半導體設備之組裝裝置,其中該旋轉單元包含至少三氣動缸,其中每一該些氣動缸對應設置於每一該些第一支撐桿之另一端上方,用以轉動每一該些第一支撐桿。
  21. 如申請專利範圍第1項所述之應用於半導體設備之組裝裝置,其中當該驅動部用以驅動該懸吊部,使該頂棚自該反應室頂蓋分離時,該升降單元下降該驅動部,使該頂棚自該反應室頂蓋分離並設置於一承載座後,該旋轉單元旋轉該驅動部,致使該驅動部轉離該頂棚,接著該升降單元上升該驅動部。
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US15/608,057 US20170358463A1 (en) 2016-06-08 2017-05-30 Assembling device used for semiconductor equipment
CN201710419905.6A CN107481955B (zh) 2016-06-08 2017-06-06 应用于半导体设备的组装装置
KR1020170070768A KR20200001634A (ko) 2016-06-08 2017-06-07 반도체 설비에 응용되는 조립장치
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