TWI663674B - 用於半導體製程之腔體蓋與頂板之組合體及成膜裝置 - Google Patents

用於半導體製程之腔體蓋與頂板之組合體及成膜裝置 Download PDF

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TWI663674B
TWI663674B TW106124829A TW106124829A TWI663674B TW I663674 B TWI663674 B TW I663674B TW 106124829 A TW106124829 A TW 106124829A TW 106124829 A TW106124829 A TW 106124829A TW I663674 B TWI663674 B TW I663674B
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楊志國
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漢民科技股份有限公司
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Abstract

一種用於半導體製程之腔體蓋與頂板之組合體，該組合體包含一腔體蓋、一頂板及一固持機構。該腔體蓋包含一可容納該固持機構之凹部。該頂板包含一平板部及一凸設於該平板部中央之支撐環。該固定機構包含一對臂部、一對分別連接於該對臂部之連接部、一對分別使該對連接部以相反方向移動之連桿及一驅動該對連桿有相對運動之主動部。當該對連接部以相反方向移動而靠近，從而該對臂部固持該支撐環。

Description

用於半導體製程之腔體蓋與頂板之組合體及成膜裝置
本發明係關於一種於半導體基板上形成薄膜之氣相成膜裝置，詳細而言，係關於一種用於半導體製程之腔體蓋與頂板之組合體。
在半導體基板上形成薄膜過程中，成膜裝置容納基板之反應腔內係利用氣體噴射器將氣體源供應之氣體水平(或垂直)噴射至承載盤(susceptor)上之基板上方進行混合，再利用加熱所引起的物理或化學反應，從而在基板(例如：晶圓)上沉積薄膜。氣體噴射器的設計必須令氣源氣體水平噴出並達成均勻分布於旋轉之基板表面，從而於基板表面產生均勻的邊界層，以利沉積薄膜之進行。
圖1係一習知成膜裝置之反應腔之剖視示意圖。一成膜裝置包含一用於產生氣相沉積薄膜之反應腔10，其係由腔壁11及腔體蓋12圍設一接近真空之密閉腔室。該腔室內設有一基板保持構件13，係用以承載及固定至少一片基板W。與基板保持構件13相對有一頂板(ceiling；對向板)14，又腔體蓋12中央設有一氣體噴射器15。該氣體噴射器14係用於導入及輸送用於製程之氣體，例如：H2/N2/V族原料氣體、III族原料氣體與載送氣體(carrier gas)之混合及H2/N2/V族原料氣體，並水平噴射至基板W之上進行混合，再利用加熱所引起的物理或 化學反應，從而在晶圓W上沉積薄膜。
在薄膜沉積製程中，附加在腔體蓋12內之上側的頂板14的下表面溫度必須被控制約300℃左右，以避免製程中髒污顆粒堆積附著於頂板14之下表面並隨之掉落於晶圓之上，造成製程晶圓的良率不佳。附加在腔體蓋12之上的頂板14與腔體蓋12有一間距，該間距可以通入不同流量與氣體組合之混合氣體以控制頂板14下表面的溫度，目的為防止製程中堆積髒污顆粒附著於頂板14之下表面。此一設計必須使用氫氣(H2)與氮氣(N2)以及氣體流量控制器(MFC)以調變不同流量與氣體組合，並且必須令頂板14與腔體蓋12之間距維持在0.1mm並且非常均勻，以利產生組合氣體流過時之均勻性，進而達成溫度的均勻性。
傳統固定頂板於腔體蓋之方式略有幾種。其中一種係利用特殊之工具將一固定環緊固於頂板之表面，然因不同設備人員之操作差異，會影響組裝後之整體組合公差及定位。另一種係藉由四根旋轉抓取勾抓住頂板上相應之卡持部。因抓取後移動時易於四根旋轉抓取勾間發生不平均之問題，從而造成頂板平面度不均勻，故不利於上述組合氣體流過時之均勻性。
綜上所述，半導體製造亟需要一種能改善前述組裝不易及氣流均勻等問題之氣相成膜裝置，藉此可以提昇沉積薄膜之品質。
本申請案係提供一種用於半導體製程之氣體噴射器與頂板之組合，其係藉由改善頂板之固定機制，藉由自動化機構對準及卡合，從而增進組裝之效率。
本申請案係提供一種氣相成膜裝置，增進頂板及腔體蓋組合後之配合公差及頂板平面度，故能避免組合氣體流動不均勻之問題產生。
於是，本發明提出一實施例，一種用於半導體製程之 腔體蓋與頂板之組合體，該組合體包含；一腔體蓋，包含一凹部；一頂板，包含一平板部及一凸設於該平板部中央之支撐環；以及一容納於該腔體蓋之凹部的固持機構，其包含一對臂部、一對分別連接於該對臂部之連接部、一對分別使該對連接部以相反方向移動之連桿及一驅動該對連桿有相對運動之主動部，其中當該對連接部以相反方向移動而靠近，從而該對臂部固持該支撐環。
於另一實施例中，該固持機構另包含一具有兩個導槽之導引部，該對連接部係分別沿著該導槽而以相反方向移動。
於另一實施例中，該支撐環包含一環狀體及一設於該環狀體之一端之凸緣。該對臂部係嵌入該環狀體及該凸緣形成之空間內以固持該支撐環。
於另一實施例中，各該連桿之一端係與該主動部結合，當該該主動部逆時鐘或順時鐘旋轉時，則該對連接部以相反方向移動而靠近或遠離，從而該對臂部固持或釋放該支撐環。
本發明另提出一實施例，一種用於半導體製程之成膜裝置，包含：一反應腔，包含一具有一凹部的腔體蓋；一頂板，包含一於中央有一開口之平板部及一凸設於該平板部之開口的支撐環；一容納於該腔體蓋之凹部的固持機構，其包含一對臂部、一對分別連接於該對臂部之連接部、一對分別使該對連接部以相反方向移動之連桿及一驅動該對連桿有相對運動之主動部，其中當該對連接部以相反方向移動而靠近，從而該對臂部固持該支撐環；以及一氣體噴射器，係設置於該平板部之開口中。
於另一實施例中，該氣體噴射器包含一氣體流道部，該氣體流道部係突出於該平板部之開口及該腔體蓋外。
於另一實施例中，該固持機構另包含一具有兩個導槽之導引部，該對連接部係分別沿著該導槽而以相反方向移動。
於另一實施例中，該支撐環包含一環狀體及一設於該環狀體之一端之凸緣。該對臂部係嵌入該環狀體及該凸緣形成之空間內以固持該支撐環。
於另一實施例中，各該連桿之一端係與該主動部結合，當該該主動部逆時鐘或順時鐘旋轉時，則該對連接部以相反方向移動而靠近或遠離，從而該對臂部固定或釋放該支撐環。
10、20‧‧‧反應腔
11、21‧‧‧腔壁
12、22‧‧‧腔體蓋
13、23‧‧‧基板保持構件
14、24‧‧‧頂板
15、25‧‧‧氣體噴射器
26‧‧‧固持機構
241‧‧‧平板部
242‧‧‧支撐環
251‧‧‧氣體流道部
252‧‧‧噴流部
261‧‧‧臂部
262‧‧‧連接部
263‧‧‧連桿
264‧‧‧主動部
265‧‧‧導引部
2421‧‧‧環狀體
2422‧‧‧凸緣
2651‧‧‧導槽
W‧‧‧基板
圖1係繪示一習知成膜裝置之反應腔之剖視示意圖。
圖2係繪示本申請案一實施例之成膜裝置之反應腔的剖視示意圖。
圖3係繪示圖2中固持機構固定頂板之俯視示意圖。
圖4係繪示圖2中固持機構釋放頂板之俯視示意圖。
以下，就實施本發明之各種實施形態來加以說明。請參照隨附的圖式，並參考其對應的說明。另外，本說明書及圖式中，實質相同或相同的構成會給予相同的符號而省略其重複的說明。
圖2係繪示本申請案一實施例之成膜裝置之反應腔的剖視示意圖。如圖所示，成膜裝置2之反應腔20係用於III/V族化合物半導體成膜裝置之範例，其係由腔壁21及腔體蓋22圍設一接近真空之密閉腔室，又該腔體蓋22包含一可容納該固持機構之凹部221。該腔室20內設有一基板保持構件23，係用以承載及固定至少一片基板W。與基板保持構件23相對有一頂板(ceiling；對向板)24，又腔體蓋22中央設有一氣體噴射器25。
該頂板24包含一平板部241及一凸設於該平板部241中央之支撐環242，又該支撐環包含一環狀體2421及一設於該環狀體2421之一端之凸緣2422。該氣體噴射器25包含一輸送III族及V族原料氣體之氣體流道部251及一與該氣體流道部251連通之噴流部252。自該噴流部252向基板W上方噴射出該等氣體並進行混合，再利用加熱所引起的物理或化學反應，從而在晶圓W上沉積薄膜。
該成膜裝置2更包含一固持機構26，該固持機構26包含一對可嵌入該環狀體2421及凸緣2422形成之空間內之臂部261、一對分別連接於該對臂部261之連接部262、一對分別使該對連接部262以相反方向移動之連桿263、一驅動該對連桿263有相對運動之主動部264及一導引部265。如圖所示，氣體噴射器25之氣體流道部251係突出於該平板部241中央之開口及該對臂部261中間，並延伸至腔體蓋22外和原料氣體之供應源相互連通。
該主動部264係呈一圓柱狀，一端可以和馬達或致動器聯結，故可以產生旋轉運動。藉由控制主動部264之逆時鐘或順時鐘旋轉，該對臂部261可以相反方向移動。例如：當該該主動部264逆時鐘旋轉時，則該對連接部263藉由導引部265之導向以相反方向移動而靠近，從而該對臂部261固定該支撐環242。亦即，該對臂部261之前緣嵌入該環狀體2421及凸緣2422所形成之空間內，從而抓取一機械手臂(圖未示)上之頂板24及傳送該頂板24至一結合位置。反之，當該該主動部264順時鐘旋轉時，則該對連接部263藉由導引部265之導向以相反方向移動而遠離，從而該對臂部261釋放該支撐環242。亦即，該對臂部261之前緣會離開該環狀體2421及凸緣2422所形成之空間內，從而釋放該頂板24於該機械手臂上。此實施例僅為例示，並不限制本案所請發明，固持機構26中產生相對旋轉運動或直線運動之構件可以等效之連桿組取代。
圖3係繪示圖2中固持機構固定頂板之俯視示意圖。如圖所示，為能清楚表示固持機構26固定頂板24之相對位置關係，因此將腔體蓋22自圖中移除以利呈現。當該該主動部264逆時鐘旋轉時，則該對連接部263藉由導引部265之導向，以朝向中央方向移動而相互靠近，從而分別和該對連接部263連接之該對臂部261夾持及固定該支撐環242。亦即，該對臂部261之前緣進入該環狀體2421及凸緣2422所形成之空間內，藉此兩個對稱之臂部261將頂板24確實夾緊。因為對臂部261之前緣係環形，故平均支撐該環狀體2421及凸緣2422，從而降低先前技術中因點支撐造成共面性不佳之問題，並進而達到自動對位及校 正之功效。
該導引部265包括兩個長方形導槽2651，各連接部262分別於一導槽2651內相對滑行。當該對連接部262向內滑到第一位置，則和連接部263連接之該對臂部261會夾持及固定該支撐環242。
圖4係繪示圖2中固持機構釋放頂板之俯視示意圖。當該該主動部264順時鐘旋轉時，則該對連接部263藉由導引部265之導向，以朝向兩側方向移動而相互遠離，從而分別和該對連接部263連接之該對臂部261脫離及釋放該支撐環242。亦即，該對臂部261之前緣離開該環狀體2421及凸緣2422所形成之空間內，藉此兩個對稱之臂部261將頂板24確實釋放。亦即，當該對連接部262向外滑到第二位置，則和連接部263連接之該對臂部261會脫離及釋放該支撐環242，即兩臂部261間有空隙。
本發明之技術內容及技術特點已揭示如上，然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此，本發明之保護範圍應不限於實施例所揭示者，而應包括各種不背離本發明之替換及修飾，並為以下之申請專利範圍所涵蓋。

Claims (11)

  1. 一種用於半導體製程之腔體蓋與頂板之組合體，該組合體包含：一腔體蓋，包含一凹部；一頂板，包含一平板部及一凸設於該平板部中央之支撐環；以及一容納於該腔體蓋之凹部的固持機構，其包含：一對臂部；一對連接部，分別連接於該對臂部；一對連桿，分別使該對連接部以相反方向移動；及一主動部，驅動該對連桿有相對運動；其中當該對連接部以相反方向移動而靠近，從而該對臂部固持該支撐環。
  2. 如請求項1所述之用於半導體製程之腔體蓋與頂板之組合體，其中該固持機構另包含一具有兩個導槽之導引部，該對連接部係分別沿著該兩個導槽中對應一者而以相反方向移動。
  3. 如請求項2所述之用於半導體製程之腔體蓋與頂板之組合體，其中該支撐環包含一環狀體及一設於該環狀體之一端之凸緣。
  4. 如請求項3所述之用於半導體製程之腔體蓋與頂板之組合體，其中該對臂部係嵌入該環狀體及該凸緣形成之空間內以固持該支撐環。
  5. 如請求項1所述之用於半導體製程之腔體蓋與頂板之組合體，其中各該連桿之一端係與該主動部結合，當該主動部逆時鐘或順時鐘旋轉時，則該對連接部以相反方向移動而靠近或遠離，從而該對臂部固持或釋放該支撐環。
  6. 一種用於半導體製程之成膜裝置，包含：一反應腔，包含一具有一凹部的腔體蓋；一頂板，包含一於中央有一開口之平板部及一凸設於該平板部之開口的支撐環；一容納於該腔體蓋之凹部的固持機構，其包含：一對臂部；一對連接部，分別連接於該對臂部；一對連桿，分別使該對連接部以相反方向移動；及一主動部，驅動該對連桿有相對運動；其中當該對連接部以相反方向移動而靠近，從而該對臂部固持該支撐環；以及一氣體噴射器，係設置於該平板部之開口中。
  7. 如請求項6所述之用於半導體製程之成膜裝置，其中該氣體噴射器包含一氣體流道部，該氣體流道部係突出於該平板部之開口及該腔體蓋外。
  8. 如請求項6所述之用於半導體製程之成膜裝置，其中該固持機構另包含一具有兩個導槽之導引部，該對連接部係分別沿著該兩個導槽中對應一者而以相反方向移動。
  9. 如請求項6所述之用於半導體製程之成膜裝置，其中該支撐環包含一環狀體及一設於該環狀體之一端之凸緣。
  10. 如請求項9所述之用於半導體製程之成膜裝置，其中該對臂部係嵌入該環狀體及該凸緣形成之空間內以固持該支撐環。
  11. 如請求項10所述之用於半導體製程之成膜裝置，其中各該連桿之一端係與該主動部結合，當該主動部逆時鐘或順時鐘旋轉時，則該對連接部以相反方向移動而靠近或遠離，從而該對臂部固持或釋放該支撐環。
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