CN109295435A - 用于半导体工艺的腔体盖与顶板的组件及成膜装置 - Google Patents

用于半导体工艺的腔体盖与顶板的组件及成膜装置 Download PDF

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CN109295435A
CN109295435A CN201810801701.3A CN201810801701A CN109295435A CN 109295435 A CN109295435 A CN 109295435A CN 201810801701 A CN201810801701 A CN 201810801701A CN 109295435 A CN109295435 A CN 109295435A
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杨志国
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Abstract

一种用于半导体工艺的腔体盖与顶板的组件及成膜装置，该组件包含一腔体盖、一顶板及一固持机构。该腔体盖包含一可容纳该固持机构的凹部。该顶板包含一平板部及一凸设于该平板部中央的支撑环。该固持机构包含一对臂部、一对分别连接于该对臂部的连接部、一对分别使该对连接部以相反方向移动的连杆及一驱动该对连杆有相对运动的驱动部。当该对连接部以相反方向移动而靠近，从而该对臂部固持该支撑环。

Description

用于半导体工艺的腔体盖与顶板的组件及成膜装置
技术领域
本发明关于一种于半导体基板上形成薄膜的气相成膜装置，详细而言，关于一种用于半导体工艺的腔体盖与顶板的组件。
背景技术
在半导体基板上形成薄膜过程中，成膜装置容纳基板的反应腔内利用气体喷射器将气体源供应的气体水平(或垂直)喷射至承载盘(susceptor)上的基板上方进行混合，再利用加热所引起的物理或化学反应，从而在基板(例如：晶圆)上沉积薄膜。气体喷射器的设计必须令气源气体水平喷出并达成均匀分布于旋转的基板表面，从而于基板表面产生均匀的边界层，以利沉积薄膜的进行。
图1为一现有成膜装置的反应腔的剖视示意图。一成膜装置包含一用于产生气相沉积薄膜的反应腔10，其由腔壁11及腔体盖12围设一接近真空的密闭腔室。该腔室内设有一基板保持构件13，用以承载及固定至少一片基板W。与基板保持构件13相对有一顶板(ceiling；对向板)14，又腔体盖12中央设有一气体喷射器15。该气体喷射器14用于导入及输送用于工艺的气体，例如：H2/N2/V族原料气体、III族原料气体与载送气体(carriergas)的混合及H2/N2/V族原料气体，并水平喷射至基板W之上进行混合，再利用加热所引起的物理或化学反应，从而在晶圆W上沉积薄膜。
在薄膜沉积工艺中，附加在腔体盖12内的上侧的顶板14的下表面温度必须被控制约300℃左右，以避免工艺中脏污颗粒堆积附着于顶板14的下表面并随之掉落于晶圆之上，造成工艺晶圆的良率不佳。附加在腔体盖12之上的顶板14与腔体盖12有一间距，该间距可以通入不同流量与气体组合的混合气体以控制顶板14下表面的温度，目的为防止工艺中堆积脏污颗粒附着于顶板14的下表面。此一设计必须使用氢气(H2)与氮气(N2)以及气体流量控制器(MFC)以调变不同流量与气体组合，并且必须令顶板14与腔体盖12的间距维持在0.1mm并且非常均匀，以利产生组合气体流过时的均匀性，进而达成温度的均匀性。
传统固定顶板于腔体盖的方式略有几种。其中一种利用特殊的工具将一固定环紧固于顶板的表面，然因不同设备人员的操作差异，会影响组装后的整体组合公差及定位。另一种通过四根旋转抓取勾抓住顶板上相应的卡持部。因抓取后移动时易于四根旋转抓取勾间发生不平均的问题，从而造成顶板平面度不均匀，故不利于上述组合气体流过时的均匀性。
综上所述，半导体制造亟需要一种能改善前述组装不易及气流均匀等问题的气相成膜装置，由此可以提升沉积薄膜的品质。
发明内容
本申请提供一种用于半导体工艺的气体喷射器与顶板的组合，其通过改善顶板的固定机制，通过自动化机构对准及卡合，从而增进组装的效率。
本申请案提供一种气相成膜装置，增进顶板及腔体盖组合后的配合公差及顶板平面度，故能避免组合气体流动不均匀的问题产生。
于是，本发明提出一实施例，一种用于半导体工艺的腔体盖与顶板的组件，该组件包含：一腔体盖，包含一凹部；一顶板，包含一平板部及一凸设于该平板部中央的支撑环；以及一容纳于该腔体盖的凹部的固持机构，其包含一对臂部、一对分别连接于该对臂部的连接部、一对分别使该对连接部以相反方向移动的连杆及一驱动该对连杆有相对运动的驱动部，其中当该对连接部以相反方向移动而靠近，从而该对臂部固持该支撑环。
于另一实施例中，该固持机构另包含一具有两个导槽的导引部，该对连接部分别沿着该导槽而以相反方向移动。
于另一实施例中，该支撑环包含一环状体及一设于该环状体的一端的凸缘。该对臂部嵌入该环状体及该凸缘形成的空间内以固持该支撑环。
于另一实施例中，各该连杆的一端与该驱动部结合，当该驱动部逆时钟或顺时钟旋转时，则该对连接部以相反方向移动而靠近或远离，从而该对臂部固持或释放该支撑环。
本发明另提出一实施例，一种用于半导体工艺的成膜装置，包含：一反应腔，包含一具有一凹部的腔体盖；一顶板，包含一于中央有一开口的平板部及一凸设于该平板部的开口的支撑环；一容纳于该腔体盖的凹部的固持机构，其包含一对臂部、一对分别连接于该对臂部的连接部、一对分别使该对连接部以相反方向移动的连杆及一驱动该对连杆有相对运动的驱动部，其中当该对连接部以相反方向移动而靠近，从而该对臂部固持该支撑环；以及一气体喷射器，设置于该平板部的开口中。
于另一实施例中，该气体喷射器包含一气体流道部，该气体流道部突出于该平板部的开口及该腔体盖外。
于另一实施例中，该固持机构另包含一具有两个导槽的导引部，该对连接部分别沿着该导槽而以相反方向移动。
于另一实施例中，该支撑环包含一环状体及一设于该环状体的一端的凸缘。该对臂部嵌入该环状体及该凸缘形成的空间内以固持该支撑环。
于另一实施例中，各该连杆的一端与该驱动部结合，当该驱动部逆时钟或顺时钟旋转时，则该对连接部以相反方向移动而靠近或远离，从而该对臂部固定或释放该支撑环。
附图说明
图1示出一现有成膜装置的反应腔的剖视示意图。
图2示出本申请一实施例的成膜装置的反应腔的剖视示意图。
图3示出图2中固持机构固定顶板的俯视示意图。
图4示出图2中固持机构释放顶板的俯视示意图。
主要元件符号说明：
10、20 反应腔
11、21 腔壁
12、22 腔体盖
13、23 基板保持构件
14、24 顶板
15、25 气体喷射器
26 固持机构
241 平板部
242 支撑环
251 气体流道部
252 喷流部
261 臂部
262 连接部
263 连杆
264 驱动部
265 导引部
2421 环状体
2422 凸缘
2651 导槽
W 基板
2 成膜装置
221 凹部
具体实施方式
以下，就实施本发明的各种实施形态来加以说明。请参照随附的附图，并参考其对应的说明。另外，本说明书及附图中，实质相同或相同的构成会给予相同的符号而省略其重复的说明。
图2示出本申请一实施例的成膜装置的反应腔的剖视示意图。如图所示，成膜装置2的反应腔20用于III/V族化合物半导体成膜装置的范例，其由腔壁21及腔体盖22围设一接近真空的密闭腔室，又该腔体盖22包含一可容纳该固持机构的凹部221。该腔室20内设有一基板保持构件23，用以承载及固定至少一片基板W。与基板保持构件23相对有一顶板(ceiling；对向板)24，又腔体盖22中央设有一气体喷射器25。
该顶板24包含一平板部241及一凸设于该平板部241中央的支撑环242，又该支撑环包含一环状体2421及一设于该环状体2421的一端的凸缘2422。该气体喷射器25包含一输送III族及V族原料气体的气体流道部251及一与该气体流道部251连通的喷流部252。自该喷流部252向基板W上方喷射出该等气体并进行混合，再利用加热所引起的物理或化学反应，从而在晶圆W上沉积薄膜。
该成膜装置2还包含一固持机构26，该固持机构26包含一对可嵌入该环状体2421及凸缘2422形成的空间内的臂部261、一对分别连接于该对臂部261的连接部262、一对分别使该对连接部262以相反方向移动的连杆263、一驱动该对连杆263有相对运动的驱动部264及一导引部265。如图所示，气体喷射器25的气体流道部251突出于该平板部241中央的开口及该对臂部261中间，并延伸至腔体盖22外和原料气体的供应源相互连通。
该驱动部264呈一圆柱状，一端可以和马达或致动器联结，故可以产生旋转运动。通过控制驱动部264的逆时钟或顺时钟旋转，该对臂部261可以相反方向移动。例如:当该驱动部264逆时钟旋转时，则该对连接部263通过导引部265的导向以相反方向移动而靠近，从而该对臂部261固定该支撑环242。亦即，该对臂部261的前缘嵌入该环状体2421及凸缘2422所形成的空间内，从而抓取一机械手臂(图未示出)上的顶板24及传送该顶板24至一结合位置。反之，当该驱动部264顺时钟旋转时，则该对连接部263通过导引部265的导向以相反方向移动而远离，从而该对臂部261释放该支撑环242。亦即，该对臂部261的前缘会离开该环状体2421及凸缘2422所形成的空间内，从而释放该顶板24于该机械手臂上。此实施例仅为例示，并不限制本案所请发明，固持机构26中产生相对旋转运动或直线运动的构件可以等效的连杆组取代。
图3示出图2中固持机构固定顶板的俯视示意图。如图所示，为能清楚表示固持机构26固定顶板24的相对位置关系，因此将腔体盖22自图中移除以利呈现。当该驱动部264逆时钟旋转时，则该对连接部263通过导引部265的导向，以朝向中央方向移动而相互靠近，从而分别和该对连接部263连接的该对臂部261夹持及固定该支撑环242。亦即，该对臂部261的前缘进入该环状体2421及凸缘2422所形成的空间内，由此两个对称的臂部261将顶板24确实夹紧。因为对臂部261的前缘是环形，故平均支撑该环状体2421及凸缘2422，从而降低现有技术中因点支撑造成共面性不佳的问题，并进而达到自动对位及校正的功效。
该导引部265包括两个长方形导槽2651，各连接部262分别于一导槽2651内相对滑行。当该对连接部262向内滑到第一位置，则和连接部263连接的该对臂部261会夹持及固定该支撑环242。
图4示出图2中固持机构释放顶板的俯视示意图。当该驱动部264顺时钟旋转时，则该对连接部263通过导引部265的导向，以朝向两侧方向移动而相互远离，从而分别和该对连接部263连接的该对臂部261脱离及释放该支撑环242。亦即，该对臂部261的前缘离开该环状体2421及凸缘2422所形成的空间内，由此两个对称的臂部261将顶板24确实释放。亦即，当该对连接部262向外滑到第二位置，则和连接部263连接的该对臂部261会脱离及释放该支撑环242，即两臂部261间有空隙。
本发明的技术内容及技术特点已公开如上，然而本领域技术人员仍可能基于本发明的教示及公开而作种种不背离本发明精神的替换及修饰。因此，本发明的保护范围应不限于实施例所公开者，而应包括各种不背离本发明的替换及修饰，并为申请专利范围所涵盖。

Claims (11)

1.一种用于半导体工艺的腔体盖与顶板的组件，其特征在于，该组件包含：
一腔体盖，包含一凹部；
一顶板，包含一平板部及一凸设于该平板部中央的支撑环；以及
一容纳于该腔体盖的凹部的固持机构，其包含:
一对臂部；
一对连接部，分别连接于该对臂部；
一对连杆，分别使该对连接部以相反方向移动；及
一驱动部，驱动该对连杆有相对运动；
其中当该对连接部以相反方向移动而靠近，从而该对臂部固持该支撑环。
2.根据权利要求1所述的用于半导体工艺的腔体盖与顶板的组件，其特征在于，该固持机构另包含一具有两个导槽的导引部，该对连接部分别沿着该导槽而以相反方向移动。
3.根据权利要求2所述的用于半导体工艺的腔体盖与顶板的组件，其特征在于，该支撑环包含一环状体及一设于该环状体的一端的凸缘。
4.根据权利要求3所述的用于半导体工艺的腔体盖与顶板的组件，其特征在于，该对臂部嵌入该环状体及该凸缘形成的空间内以固持该支撑环。
5.根据权利要求1所述的用于半导体工艺的腔体盖与顶板的组件，其特征在于，各该连杆的一端与该驱动部结合，当该驱动部逆时钟或顺时钟旋转时，则该对连接部以相反方向移动而靠近或远离，从而该对臂部固持或释放该支撑环。
6.一种用于半导体工艺的成膜装置，其特征在于，包含：
一反应腔，包含一具有一凹部的腔体盖；
一顶板，包含一于中央有一开口的平板部及一凸设于该平板部的开口的支撑环；
一容纳于该腔体盖的凹部的固持机构，其包含：
一对臂部；
一对连接部，分别连接于该对臂部；
一对连杆，分别使该对连接部以相反方向移动；及
一驱动部，驱动该对连杆有相对运动；
其中当该对连接部以相反方向移动而靠近，从而该对臂部固持该支撑环；以及
一气体喷射器，设置于该平板部的开口中。
7.根据权利要求6所述的用于半导体工艺的成膜装置，其特征在于，该气体喷射器包含一气体流道部，该气体流道部突出于该平板部的开口及该腔体盖外。
8.根据权利要求6所述的用于半导体工艺的成膜装置，其特征在于，该固持机构另包含一具有两个导槽的导引部，该对连接部分别沿着该导槽而以相反方向移动。
9.根据权利要求6所述的用于半导体工艺的成膜装置，其特征在于，该支撑环包含一环状体及一设于该环状体的一端的凸缘。
10.根据权利要求9所述的用于半导体工艺的成膜装置，其特征在于，该对臂部嵌入该环状体及该凸缘形成的空间内以固持该支撑环。
11.根据权利要求10所述的用于半导体工艺的成膜装置，其特征在于，各该连杆的一端与该驱动部结合，当该驱动部逆时钟或顺时钟旋转时，则该对连接部以相反方向移动而靠近或远离，从而该对臂部固持或释放该支撑环。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110129758A (zh) * 2019-06-19 2019-08-16 浙江工业大学 一种磁控溅射反应设备钩挂式换样品装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103407469B (zh) * 2013-08-27 2016-05-04 申俊 用于折叠式拖车的后挡板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101379214A (zh) * 2006-02-03 2009-03-04 应用材料股份有限公司 干式蚀刻以及外延沉积工艺及装置
CN101921997A (zh) * 2004-09-20 2010-12-22 应用材料股份有限公司 扩散器重力支撑件
CN102766851A (zh) * 2011-05-04 2012-11-07 广东量晶光电科技有限公司 一种金属有机化学气相沉积反应器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073537B1 (de) * 1981-09-01 1985-08-07 BBC Aktiengesellschaft Brown, Boveri & Cie. Gasabsaugstutzen für Lichtbogenöfen
US4523985A (en) * 1983-12-22 1985-06-18 Sputtered Films, Inc. Wafer processing machine
TW432578B (en) * 1997-09-18 2001-05-01 Tokyo Electron Ltd A vacuum processing apparatus
US6662673B1 (en) * 1999-04-08 2003-12-16 Applied Materials, Inc. Linear motion apparatus and associated method
US7604701B2 (en) * 2003-07-14 2009-10-20 Tokyo Electron Limited Method and apparatus for removing external components from a process chamber without compromising process vacuum
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US20060108069A1 (en) * 2004-11-19 2006-05-25 Samsung Electronics Co., Ltd. Plasma reaction chamber and captive silicon electrode plate for processing semiconductor wafers
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
JP5571020B2 (ja) * 2011-03-15 2014-08-13 株式会社神戸製鋼所 揚収容器および揚収方法
CN102560645B (zh) * 2011-09-02 2016-05-18 江苏协鑫硅材料科技发展有限公司 一种在晶体硅形成过程中控制电阻率的方法及其装置
US9947512B2 (en) * 2011-10-25 2018-04-17 Lam Research Corporation Window and mounting arrangement for twist-and-lock gas injector assembly of inductively coupled plasma chamber
JP2018528616A (ja) * 2015-09-22 2018-09-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ シャワーヘッド支持構造
TWI596692B (zh) * 2016-06-08 2017-08-21 漢民科技股份有限公司 應用於半導體設備之組裝裝置
TWI633585B (zh) * 2017-03-31 2018-08-21 漢民科技股份有限公司 用於半導體製程之氣體噴射器與頂板之組合及成膜裝置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101921997A (zh) * 2004-09-20 2010-12-22 应用材料股份有限公司 扩散器重力支撑件
CN101379214A (zh) * 2006-02-03 2009-03-04 应用材料股份有限公司 干式蚀刻以及外延沉积工艺及装置
CN102766851A (zh) * 2011-05-04 2012-11-07 广东量晶光电科技有限公司 一种金属有机化学气相沉积反应器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110129758A (zh) * 2019-06-19 2019-08-16 浙江工业大学 一种磁控溅射反应设备钩挂式换样品装置
CN110129758B (zh) * 2019-06-19 2024-02-09 浙江工业大学 一种磁控溅射反应设备钩挂式换样品装置

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