JP6009677B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP6009677B2 JP6009677B2 JP2015531866A JP2015531866A JP6009677B2 JP 6009677 B2 JP6009677 B2 JP 6009677B2 JP 2015531866 A JP2015531866 A JP 2015531866A JP 2015531866 A JP2015531866 A JP 2015531866A JP 6009677 B2 JP6009677 B2 JP 6009677B2
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- 239000000758 substrate Substances 0.000 title claims description 100
- 238000000034 method Methods 0.000 claims description 60
- 230000003028 elevating effect Effects 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 15
- 238000005086 pumping Methods 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 40
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000001174 ascending effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229910000953 kanthal Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (8)
- 基板に対する工程が行われる基板処理装置において、
上部が開放された形状を有し、一側壁に設置されて前記基板が出入する通路を有するメインチャンバーと、
前記メインチャンバーの開放された上部に設置され、外部から遮断されて前記工程が行われる工程空間を形成するチャンバー蓋と、
下部が開放された形状の内部空間を有し、前記基板が置かれるサセプタプレートと、
前記内部空間に設置されて回転可能であり、前記サセプタプレートから離隔配置されて前記サセプタプレートを加熱するメインヒータと、含み、
前記チャンバー蓋と前記サセプタプレートとの間に配置される拡散孔を設けた拡散板、および、前記拡散板から前記サセプタプレート側に配置される分散孔を設けたシャワーヘッドと、
前記チャンバー蓋の平板状の上部に設置されて、工程ガスを前記工程空間に向かって予備加熱する平板状の上部ヒータとをさらに含むことを特徴とする基板処理装置。 - 前記基板処理装置は、
前記サセプタプレートの開放された下部に設置されて前記内部空間の熱が外部に拡散されることを防止する支持部材を更に含むことを特徴とする請求項1記載の基板処理装置。 - 前記基板処理装置は前記メインヒータの下部に設置されて前記メインヒータを支持し、前記メインヒータと共に回転可能な回転軸を更に含み、
前記メインヒータは、
前記回転軸の上部に設置され、前記内部空間に挿入設置されるヒーティングプレートと、
前記ヒーティングプレートに設置されて前記サセプタプレートを加熱する熱線と、を具備することを特徴とする請求項2記載の基板処理装置。 - 前記メインチャンバーは下部が開放された形状を有し、
前記基板処理装置は、
前記メインチャンバーの開放された下部に設置されて前記内部空間を有し、前記回転軸の周りに沿って設置されるポンピングブロックを更に含むことを特徴とする請求項3記載の基板処理装置。 - 前記メインヒータ及び前記回転軸は前記内部空間に設置され、
前記基板処理装置は、
上部に置かれた前記基板を支持し、上昇位置及び下降位置に転換可能な複数個のホルダと、
前記ホルダと連結されて前記ホルダを昇降する昇降軸と、
前記回転軸の周りに沿ってポンピングブロックの上に形成され、工程ガスを外部に排出する排出孔と、
前記排出孔の外側に形成されて前記昇降軸が挿入設置される昇降孔と、を更に含むことを特徴とする請求項4記載の基板処理装置。 - 前記基板処理装置は、
前記チャンバー蓋の上部面に形成されて前記工程空間に向かって工程ガスを供給するガス供給口と、
前記チャンバー蓋の下端部に設置され、前記工程ガスを前記基板に向かって拡散させる拡散孔を有する拡散板と、を更に含むことを特徴とする請求項1記載の基板処理装置。 - 前記基板処理装置は前記基板を昇降する昇降ユニットを更に含むが、
前記昇降ユニットは、
上部に置かれた前記基板を支持し、上昇位置及び下降位置に転換可能な複数個のホルダと、
前記ホルダと連結されて前記ホルダを昇降する昇降軸と、を含むことを特徴とする請求項1記載の基板処理装置。 - 前記サセプタプレートは上部面の縁に沿って形成される昇降溝を有し、
前記ホルダは、
前記上昇位置で上部面が前記サセプタプレートの上部面より高く位置し、
前記下降位置で前記昇降溝に挿入されて前記基板の下部面から離隔されることを特徴とする請求項7記載の基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0102925 | 2012-09-17 | ||
KR1020120102925A KR101440307B1 (ko) | 2012-09-17 | 2012-09-17 | 기판처리장치 |
PCT/KR2013/008433 WO2014042488A2 (ko) | 2012-09-17 | 2013-09-17 | 기판처리장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015529983A JP2015529983A (ja) | 2015-10-08 |
JP6009677B2 true JP6009677B2 (ja) | 2016-10-19 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015531866A Active JP6009677B2 (ja) | 2012-09-17 | 2013-09-17 | 基板処理装置 |
Country Status (6)
Country | Link |
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US (1) | US20150252476A1 (ja) |
JP (1) | JP6009677B2 (ja) |
KR (1) | KR101440307B1 (ja) |
CN (1) | CN104641464B (ja) |
TW (1) | TWI512845B (ja) |
WO (1) | WO2014042488A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI596692B (zh) * | 2016-06-08 | 2017-08-21 | 漢民科技股份有限公司 | 應用於半導體設備之組裝裝置 |
KR102612248B1 (ko) * | 2016-09-05 | 2023-12-12 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
CN111863699B (zh) * | 2019-04-28 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 承载装置及工艺腔室 |
CN111979528A (zh) * | 2019-05-24 | 2020-11-24 | 东泰高科装备科技有限公司 | 一种旋转支撑装置及mocvd系统 |
KR102239362B1 (ko) | 2019-07-01 | 2021-04-09 | 세메스 주식회사 | 기판 처리 장치 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
JP3099101B2 (ja) * | 1993-05-10 | 2000-10-16 | 東京エレクトロン株式会社 | 熱処理装置 |
JPH0766139A (ja) * | 1993-08-30 | 1995-03-10 | Ryoden Semiconductor Syst Eng Kk | 化学気相成長装置 |
JP4317608B2 (ja) * | 1999-01-18 | 2009-08-19 | 東京エレクトロン株式会社 | 成膜装置 |
JP4203206B2 (ja) * | 2000-03-24 | 2008-12-24 | 株式会社日立国際電気 | 基板処理装置 |
TWI334888B (ja) * | 2000-09-08 | 2010-12-21 | Tokyo Electron Ltd | |
JP4806856B2 (ja) * | 2001-03-30 | 2011-11-02 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
EP1540258A1 (en) * | 2002-07-15 | 2005-06-15 | Aviza Technology, Inc. | Variable heater element for low to high temperature ranges |
JP4951840B2 (ja) * | 2004-03-12 | 2012-06-13 | 東京エレクトロン株式会社 | プラズマ成膜装置、熱処理装置及びプラズマ成膜方法並びに熱処理方法 |
KR100578741B1 (ko) * | 2004-04-30 | 2006-05-12 | 주식회사 씨싸이언스 | 웨이퍼 식각 및 정렬장치 |
US20080076077A1 (en) * | 2006-09-21 | 2008-03-27 | Toshiba America Electronic Components, Inc. | Apparatus and method for heating semiconductor wafers with improved temperature uniformity |
JP5204721B2 (ja) * | 2008-06-16 | 2013-06-05 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
JP5432608B2 (ja) * | 2009-06-26 | 2014-03-05 | 株式会社ニューフレアテクノロジー | 半導体製造方法および半導体製造装置 |
-
2012
- 2012-09-17 KR KR1020120102925A patent/KR101440307B1/ko active IP Right Grant
-
2013
- 2013-08-16 TW TW102129433A patent/TWI512845B/zh active
- 2013-09-17 JP JP2015531866A patent/JP6009677B2/ja active Active
- 2013-09-17 CN CN201380048248.9A patent/CN104641464B/zh active Active
- 2013-09-17 WO PCT/KR2013/008433 patent/WO2014042488A2/ko active Application Filing
- 2013-09-17 US US14/427,333 patent/US20150252476A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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CN104641464B (zh) | 2017-03-08 |
CN104641464A (zh) | 2015-05-20 |
TW201413829A (zh) | 2014-04-01 |
US20150252476A1 (en) | 2015-09-10 |
TWI512845B (zh) | 2015-12-11 |
WO2014042488A2 (ko) | 2014-03-20 |
KR20140037385A (ko) | 2014-03-27 |
JP2015529983A (ja) | 2015-10-08 |
WO2014042488A3 (ko) | 2014-05-08 |
KR101440307B1 (ko) | 2014-09-18 |
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