Classifications

• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K13/00—Use of mixtures of ingredients not covered by one single of the preceding main groups, each of these compounds being essential
  • C08K13/02—Organic and inorganic ingredients
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K3/00—Use of inorganic substances as compounding ingredients
  • C08K3/02—Elements
  • C08K3/08—Metals
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K5/00—Use of organic ingredients
  • C08K5/04—Oxygen-containing compounds
  • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K5/00—Use of organic ingredients
  • C08K5/16—Nitrogen-containing compounds
  • C08K5/17—Amines; Quaternary ammonium compounds
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L101/00—Compositions of unspecified macromolecular compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
  • H01B1/20—Conductive material dispersed in non-conductive organic material
  • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
  • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
  • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K3/00—Use of inorganic substances as compounding ingredients
  • C08K3/02—Elements
  • C08K3/08—Metals
  • C08K2003/085—Copper
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K2201/00—Specific properties of additives
  • C08K2201/001—Conductive additives
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K2201/00—Specific properties of additives
  • C08K2201/002—Physical properties
  • C08K2201/005—Additives being defined by their particle size in general
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
  • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
  • H01L2224/29001—Core members of the layer connector
  • H01L2224/29099—Material
  • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
  • H01L2224/29199—Material of the matrix
  • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
  • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
  • H01L2224/29001—Core members of the layer connector
  • H01L2224/29099—Material
  • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
  • H01L2224/29199—Material of the matrix
  • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
  • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
  • H01L2224/29001—Core members of the layer connector
  • H01L2224/29099—Material
  • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
  • H01L2224/29298—Fillers
  • H01L2224/29299—Base material
  • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
  • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
  • H01L2224/29347—Copper [Cu] as principal constituent
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
  • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
  • H01L2224/29001—Core members of the layer connector
  • H01L2224/29099—Material
  • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
  • H01L2224/29298—Fillers
  • H01L2224/29499—Shape or distribution of the fillers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
  • H01L2224/321—Disposition
  • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
  • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
  • H01L2224/838—Bonding techniques
  • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
  • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
  • H01L2224/83862—Heat curing
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Definitions

• the present invention relates to a resin composition, a conductive copper paste, and a semiconductor device.
• the present invention relates to a resin composition, a conductive copper paste, and a semiconductor device, which have low specific resistance.
• a semiconductor device in which the electrode portion of a semiconductor element and the conductive portion of a substrate are bonded to each other is very extensively used.
• a conductive adhesive or soldering is used for bonding the electrode portion of a semiconductor element and the conductive portion of a substrate.
• the conductive adhesive has the advantage that bonding can be performed at a lower temperature than soldering.
• the specific resistance of the conductive adhesive is higher than that of solder. Therefore, studies are underway to reduce the resistance of the conductive adhesive.
• Known conductive adhesives include silver as a conductive filler.
• silver has migration properties and has increased in price, studies are underway to use copper as a conductive filler.
• the conductive adhesive including copper generally has the drawback that the specific resistance is high.
• a conductive copper paste containing as essential components a copper powder having a predetermined particle size distribution and tap density, a thermosetting resin, an organic carboxylic acid, and a chelate agent, and furthermore, polybutadiene (claim 1 and paragraphs 0013 and 0022 of PATENT LITERATURE 1).
• This conductive copper paste is prepared such that it is a conductive copper paste which enables screen printing, has favorable conductivity comparable to a conductive silver paste, and possesses migration resistance properties, and which is suitable for through holes corresponding to fine pitches (paragraph 0008 of PATENT LITERATURE 1).
• specific examples of the organic carboxylic acid may include salicylic acid, benzoic acid, tartaric acid, citric acid, maleic acid, succinic acid, fumaric acid, and malonic acid (paragraph 0018 of PATENT LITERATURE 1). All these organic carboxylic acids are solid at normal temperature.
• this conductive paste for circuit boards may include a compound having flux activity (paragraph 0014 of PATENT LITERATURE 2).
• An example of the compound having flux activity may include aliphatic carboxylic acids such as oleic acid (paragraphs 0038 and 0046 of PATENT LITERATURE 2).
• a conductive copper paste composition which includes a prepolymer having at least two hydroxyl groups and at least one tertiary amine in one molecule, a copper powder, an amino resin, and a reducing agent, and which can be etched by an acidic etchant (claim 1 of PATENT LITERATURE 3).
• the reducing agent may include an unsaturated monocarboxylic acid having 12 to 23 carbon atoms, such as oleic acid and linoleic acid (paragraph 0016 of PATENT LITERATURE 3).
• these conductive copper pastes have the following problems. That is, the specific resistance of the conductive copper pastes is likely to become high, and furthermore, significantly changes after curing depending on the content of a copper powder.
• usable resins are substantially limited (a resol-type phenolic resin according to PATENT LITERATURE 1, a compound having at least two (meth)acryl groups in one molecular according to PATENT LITERATURE 2, and a prepolymer having at least two hydroxyl groups and at least one tertiary amine in one molecule and an amino resin according to PATENT LITERATURE 3), applicable uses are limited.
• an object of the present invention is to provide: a resin composition in which the specific resistance after curing is low regardless of the type of a thermosetting resin and does not significantly change depending on the content of a copper powder; and a conductive copper paste including the resin composition.
• the present invention relates to a resin composition, a conductive copper paste, a cured product of a conductive copper paste, and a semiconductor device, which have solved the above-described problems by having the following configurations.
• a resin composition including (A) a copper powder having an oxygen content of 0.3% by mass or less, (B) a thermosetting resin, (C) a fatty acid, and (D) an amine or an amine compound.
• a semiconductor device including a cured product of the resin composition according to the above-described ⁇ 1>.
• thermosetting resin in which the specific resistance is low after curing regardless of the type of the thermosetting resin and does not significantly change after curing depending on the content of the copper powder (the specific resistance value is less than 1 ⁇ 10 ⁇ 4 ⁇ cm).
• a conductive copper paste including the resin composition in which the specific resistance is low after curing regardless of the type of the thermosetting resin and does not significantly change after curing depending on the content of the copper powder (the specific resistance value is less than 1 ⁇ 10 ⁇ 4 ⁇ cm).
• a cured product of a low-resistance conductive copper paste for obtaining a highly reliable semiconductor device.
• a highly reliable semiconductor device which, for example, has a small connection resistance value between the electrode portion of a semiconductor element and the conductive portion of a substrate.
• the resin composition according to the present invention includes (A) a copper powder having an oxygen content of 0.3% by mass or less, (B) a thermosetting resin, (C) a fatty acid, and (D) an amine or an amine compound.
• the copper powder having an oxygen content of 0.3% by mass or less relative to 100% of the copper powder as the (A) component imparts conductivity to the resin composition after curing.
• the resin composition is advantageous in that the specific resistance after curing does not significantly change depending on the content of the (A) component.
• the oxygen content of the copper powder is measured by hydrogen loss method. Specifically, an oxygen-nitrogen analyzer (Model: EMGA-623W) manufactured by Horiba, Ltd. is used for the measurement. It is noted that the oxygen content of the copper powder in the resin composition is measured after the copper powder is retrieved from the resin composition by solvent.
• the (A) component preferably has an average particle size of 1 to 10 ⁇ m, from the viewpoint of the oxygen content and the specific resistance of the resin composition after curing.
• An example of the (A) component may include a copper powder having a rod-like, flake-like, or spherical shape.
• a more preferable example of the (A) component may be a rod-like copper powder obtained by crushing a particle-shaped dendritic copper powder (electrolytic copper powder).
• the tap density of the (A) component is high from the viewpoint of the specific resistance of the resin composition after curing.
• Examples of a commercially available product of the (A) component may include: an electrolytic copper powder manufactured by Mitsui Mining & Smelting Co., Ltd.
• the (A) component may be used alone. Alternatively, two or more of the (A) components may be used in combination.
• the thermosetting resin as the (B) component imparts adhesiveness and curing properties to the resin composition.
• the (B) component is preferably, but not particularly limited to, at least one selected from the group consisting of an epoxy resin, a phenolic resin, a melamine resin, a xylene resin, and a urea resin, from the viewpoint of adhesive strength.
• Examples of a commercially available product of the (B) component may include: a bisphenol F-type epoxy resin manufactured by DIC Corporation (product name: EPICLON EXA-835LV); a bisphenol A-type epoxy resin manufactured by Asahi Kasei E-materials Corporation (product name: AER6072); a Novolac-type phenolic resin manufactured by Meiwa Plastic Industries, Ltd. (product name: MEH-8005); a Novolac-type phenolic resin manufactured by Gun Ei Chemical Industry Co., Ltd. (product name: Resitop PSM4324); a resol-type phenolic resin manufactured by Showa Highpolymer Co., Ltd.
• the (B) component may be used alone. Alternatively, two or more of the (B) components may be used in combination. It is noted that solid resin such as a resol-type phenolic resin may be heated and mixed with the later-described diluent when preparing a paste so that it is used in a liquid state.
• the (C) component functions as a flux component which allows an oxidized layer on the surface of the copper powder to be eluted.
• the (C) component is preferably at least one selected from the group consisting of
• the (C) component may be used alone. Alternatively, two or more of the (C) components may be used in combination.
• the amine or the amine compound as the (D) component immobilizes copper ions eluted by the flux effect of the (C) component and suppresses the action of a carboxyl group of the fatty acid at room temperature (25° C.).
• the (D) component preferably contains triethanolamine (TEA, N(CH 2 CH 2 OH) 3 ) or 4,4′-diamino-3,3′-dimethyldiphenylmethane.
• TEA triethanolamine
• An example of a commercially available product of 4,4′-diamino-3,3′-dimethyldiphenylmethane may include an amine compound manufactured by Nippon Kayaku Co., Ltd. (product name: Kayahard AA).
• the (D) component may be used alone. Alternatively, two or more of the (D) components may be used in combination.
• the content of the (A) component with respect to 100 parts by mass in total of the (A) component and the (B) component is preferably 80 to 98 parts by mass, more preferably 85 to 95 parts by mass, from the viewpoint of the adhesiveness of the resin composition and the specific resistance of the resin composition after curing.
• the content of the (A) component with respect to 100 parts by mass in total of the (A) component and the (B) component is also preferably 80 to 98 parts by mass, more preferably 85 to 95 parts by mass.
• the decrease in mass of the resin composition during curing is as low as less than 1%. Therefore, the preferable content of the (A) component in the cured product is similar to the content of the (A) component before curing.
• quantitative analysis of the (A) component is performed by a thermogravimetric analyzer.
• the content of the (B) component with respect to 100 parts by mass in total of the (A) component and the (B) component is preferably 2 to 20 parts by mass, more preferably 5 to 15 parts by mass, from the viewpoint of the curing properties of the resin composition and the specific resistance of the resin composition after curing.
• the content of the (B) component with respect to 100 parts by mass in total of the (A) component and the (B) component is also preferably 2 to 20 parts by mass, more preferably 5 to 15 parts by mass.
• quantitative analysis of the (B) component is performed by an ion chromatograph-mass spectrometer.
• the content of the (C) component with respect to 100 parts by mass in total of the (A) component and the (B) component is preferably 1 to 3 parts by mass, more preferably 1 part by mass.
• the content of the (C) component is less than 1 part by mass, the specific resistance value of the resin composition after curing is likely to become high.
• the content of the (C) component is more than 3 parts by mass, the pot life of the resin composition is likely to become short.
• the content of the (C) component with respect to 100 parts by mass in total of the (A) component and the (B) component is also more preferably 1 to 3 parts by mass.
• quantitative analysis of the (C) component is performed by an ion chromatograph-mass spectrometer.
• the content of the (D) component with respect to 100 parts by mass in total of the (A) component and the (B) component is preferably 1 to 3 parts by mass, more preferably 3 parts by mass.
• the content of the (D) component is less than 1 part by mass, the pot life of the resin composition is likely to become short.
• the content of the (D) component is more than 3 parts by mass, the specific resistance value of the resin composition after curing is likely to become high.
• the content of the diluent with respect to 100 parts by mass of the resin composition is preferably 10 to 20 parts by mass.
• the resin composition according to the present invention may further include additives as necessary, for example, a curing accelerator such as imidazole (for instance, 2-phenyl-4-methyl-5-hydroxymethylimidazole manufactured by Shikoku Chemicals Corporation (product name: CUREZOL 2P4MHZ-PW)), a wet dispersant such as carboxylic acid salt (for instance, a dispersant manufactured by Croda International Plc (product name: Hypermer KD-57)), a leveling agent, a coloring agent, an ion trapping agent, an antifoaming agent, and a flame retardant.
• a curing accelerator such as imidazole (for instance, 2-phenyl-4-methyl-5-hydroxymethylimidazole manufactured by Shikoku Chemicals Corporation (product name: CUREZOL 2P4MHZ-PW)
• a wet dispersant such as carboxylic acid salt (for instance, a dispersant manufactured by Croda International Plc (product name: Hypermer KD-57)
• the resin composition according to the present invention can be obtained by, for example, simultaneously or separately stirring, melting, mixing and dispersing the (A) to (D) components, additives, and the like, while performing heat treatment as necessary.
• An apparatus for these mixing, stirring, dispersing, and the like is not particularly limited. Examples of such an apparatus to be used may include a kneader, a three-roll mill, a ball mill, a planetary mixer, a bead mill, and the like which are equipped with a stirrer and a heater. Also, an appropriate combination of these apparatuses may be used.
• the initial viscosity of the resin composition is preferably 20 to 25 Pa ⁇ s, from the viewpoint of screen printing properties.
• the initial viscosity of the resin composition is measured within 24 hours after the resin composition has been prepared, at 25° C. with 10 rotations using a Brookfield-type viscometer (Model No.: HBDV-1, No. 14 rotor).
• the resin composition according to the present invention is formed or coated on a desired position of an electronic component, such as on the conductive portion of a substrate and the electrode portion of a semiconductor element, by screen printing or a dispenser.
• the curing condition of the resin composition according to the present invention is preferably 150 to 300° C. for 5 to 30 minutes, particularly suitably high temperature for a short period at 200 to 220° C. for 20 to 40 minutes.
• a cured product of the resin composition has low specific resistance.
• the resin composition according to the present invention is suitable for conductive copper pastes, and is suitable as an adhesive for electronic components, such as between the electrode portion of a semiconductor element and the conductive portion of a substrate.
• the semiconductor device includes a cured product of the above-described resin composition, that is, a cured product of a conductive copper paste.
• the semiconductor device also includes, for example, a substrate having a conductive portion and a semiconductor element having an electrode portion. The conductive portion of a substrate and the electrode portion of a semiconductor element are connected via a cured film of a resin composition which is a cured product of the above-described resin composition.
• the semiconductor device according to the present invention has a small connection resistance value between the electrode portion of a semiconductor element and the conductive portion of a substrate. Therefore, the semiconductor device according to the present invention has high reliability.
• the (A) component an electrolytic copper powder manufactured by Mitsui Mining & Smelting Co., Ltd. (product name: ECY-4B large particle size product, oxygen amount: 0.08%, specific surface area: 0.258 m 2 /g, tap density: 3.77 g/cm 3 , average particle size: 10.9 ⁇ m); an electrolytic copper powder manufactured by Mitsui Mining & Smelting Co., Ltd. (product name: ECY-4B, oxygen amount: 0.11%, specific surface area: 0.223 m 2 /g, tap density: 4.65 g/cm 3 , average particle size: 6.7 ⁇ m); a liquid phase reduced copper powder manufactured by Mitsui Mining & Smelting Co., Ltd.
• the (B) component there were used: a bisphenol F-type epoxy resin manufactured by DIC Corporation (product name: EPICLON EXA-835LV); a bisphenol A-type epoxy resin manufactured by Asahi Kasei E-materials Corporation (product name: AER6072); a Novolac-type phenolic resin manufactured by Meiwa Plastic Industries, Ltd. (product name: MEH-8005); a Novolac-type phenolic resin manufactured by Gun Ei Chemical Industry Co., Ltd. (product name: Resitop PSM4324); a resol-type phenolic resin manufactured by Showa Denko K.K.
• the (C) component there were used oleic acid and stearic acid manufactured by Wako Pure Chemical Industries, Ltd.
• the (D) component there were used triethanolamine manufactured by Wako Pure Chemical Industries, Ltd. (TEA, 2,2′,2′′-nitrilotriethanol) and amine 4,4′-diamino-3,3′-dimethyldiphenylmethane manufactured by Nippon Kayaku Co., Ltd. (product name: Kayahard AA).
• Resin compositions were prepared by uniformly mixing and kneading a raw material by a three-roll mill at ratios illustrated in Tables 1 to 5.
• the (A) component, the (B) component, the (C) component, and the (D) component were uniformly mixed and kneaded by a three-roll mill to prepare a resin composition.
• the viscosity was measured by a Brookfield-type viscometer (Model No.: HBDV-1, No. 14 rotor, 10 rpm). A diluent was added such that the measured viscosity became 20 to 25 Pa ⁇ s. It is noted that when the (B) component was solid and was difficult to mix and knead, the (B) component was previously dissolved in part of a diluent, and thereafter other components were mixed and kneaded.
• the resin composition was measured within 24 hours after it has been prepared, at 25° C. with 10 rotations using a Brookfield-type viscometer (HBDV-1, No. 14 rotor).
• a pattern having a width of 1 mm and a length of 71 mm was printed with the resin composition on an alumina substrate using a screen printer.
• the printed resin composition was subjected to heat treatment in a nitrogen atmosphere at 200° C. ⁇ 30 minutes by a belt conveyor curing oven so that it was cured.
• the thickness of the obtained cured film of the resin composition was measured using a surface texture and shape measuring instrument manufactured by Tokyo Seimitsu Co., Ltd. (Model No.: Surfcom 1500SD-2).
• the resistance value was measured using a digital multimeter manufactured by TFF Keithley Instruments, Inc. (Model No.: 2001).
• the volume resistivity was calculated as the specific resistance value.
• the specific resistance after curing is low regardless of the type of the thermosetting resin, and furthermore, does not significantly change after curing depending on the content of the copper powder. Therefore, the resin composition according to the present invention is extraordinarily useful as a conductive copper paste.

Landscapes

• Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
• Polymers & Plastics (AREA)
• Health & Medical Sciences (AREA)
• Medicinal Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Dispersion Chemistry (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Physics & Mathematics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Engineering & Computer Science (AREA)
• Conductive Materials (AREA)
• Compositions Of Macromolecular Compounds (AREA)
• Wire Bonding (AREA)

Applications Claiming Priority (3)

Publications (2)

Family

ID=59362732

Family Applications (1)

Country Status (6)

Families Citing this family (6)

Citations (17)

Family Cites Families (7)

• 2016
  • 2016-01-19 JP JP2016007649A patent/JP7081064B2/ja active Active
• 2017
  • 2017-01-11 WO PCT/JP2017/000596 patent/WO2017126382A1/ja active Application Filing
  • 2017-01-11 KR KR1020187019222A patent/KR102665528B1/ko active IP Right Grant
  • 2017-01-11 CN CN201780005680.8A patent/CN108473779B/zh active Active
  • 2017-01-11 US US16/067,873 patent/US10892242B2/en active Active
  • 2017-01-13 TW TW106101179A patent/TWI750148B/zh active

Patent Citations (19)

Non-Patent Citations (2)

Also Published As

Similar Documents

Legal Events