TWI917617B - 蝕刻液 - Google Patents
蝕刻液Info
- Publication number
- TWI917617B TWI917617B TW111115457A TW111115457A TWI917617B TW I917617 B TWI917617 B TW I917617B TW 111115457 A TW111115457 A TW 111115457A TW 111115457 A TW111115457 A TW 111115457A TW I917617 B TWI917617 B TW I917617B
- Authority
- TW
- Taiwan
- Prior art keywords
- etching solution
- etching
- mass
- silicon nitride
- compound
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-072537 | 2021-04-22 | ||
| JP2021072537 | 2021-04-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202302817A TW202302817A (zh) | 2023-01-16 |
| TWI917617B true TWI917617B (zh) | 2026-03-11 |
Family
ID=83722358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111115457A TWI917617B (zh) | 2021-04-22 | 2022-04-22 | 蝕刻液 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240209260A1 (enExample) |
| JP (1) | JP7768825B2 (enExample) |
| KR (1) | KR102981528B1 (enExample) |
| CN (1) | CN117223092A (enExample) |
| TW (1) | TWI917617B (enExample) |
| WO (1) | WO2022225032A1 (enExample) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201903207A (zh) | 2017-06-05 | 2019-01-16 | 美商慧盛材料美國責任有限公司 | 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液 |
| TW202026403A (zh) | 2018-11-15 | 2020-07-16 | 美商恩特葛瑞斯股份有限公司 | 氮化矽蝕刻組合物及方法 |
| TW202028533A (zh) | 2018-10-25 | 2020-08-01 | 南韓商Ｓｋ新技術股份有限公司 | 用於蝕刻劑組合物之添加劑、製備彼之方法及包含彼之蝕刻劑組合物 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO901662L (no) * | 1989-04-17 | 1990-12-21 | Monsanto Co | Toert herbicid preparat med forbedret vannopploeselighet. |
| US10995269B2 (en) | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
| TW202012062A (zh) * | 2018-07-27 | 2020-04-01 | 日商花王股份有限公司 | 清洗方法 |
| KR102258307B1 (ko) * | 2018-09-03 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| KR102759372B1 (ko) * | 2019-01-08 | 2025-01-24 | 삼성전자주식회사 | 실리콘 질화물용 식각제 조성물 및 반도체 소자의 제조 방법 |
| KR102584616B1 (ko) * | 2019-01-28 | 2023-10-05 | 오씨아이 주식회사 | 실리콘 기판 식각 용액 및 이를 사용한 반도체 소자의 제조 방법 |
| JP2021086943A (ja) * | 2019-11-28 | 2021-06-03 | 花王株式会社 | エッチング液 |
-
2022
- 2022-04-22 JP JP2022070772A patent/JP7768825B2/ja active Active
- 2022-04-22 KR KR1020237035570A patent/KR102981528B1/ko active Active
- 2022-04-22 US US18/287,778 patent/US20240209260A1/en active Pending
- 2022-04-22 CN CN202280029695.9A patent/CN117223092A/zh active Pending
- 2022-04-22 WO PCT/JP2022/018503 patent/WO2022225032A1/ja not_active Ceased
- 2022-04-22 TW TW111115457A patent/TWI917617B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201903207A (zh) | 2017-06-05 | 2019-01-16 | 美商慧盛材料美國責任有限公司 | 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液 |
| TW202028533A (zh) | 2018-10-25 | 2020-08-01 | 南韓商Ｓｋ新技術股份有限公司 | 用於蝕刻劑組合物之添加劑、製備彼之方法及包含彼之蝕刻劑組合物 |
| TW202026403A (zh) | 2018-11-15 | 2020-07-16 | 美商恩特葛瑞斯股份有限公司 | 氮化矽蝕刻組合物及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102981528B1 (ko) | 2026-06-23 |
| TW202302817A (zh) | 2023-01-16 |
| JP7768825B2 (ja) | 2025-11-12 |
| JP2022167883A (ja) | 2022-11-04 |
| US20240209260A1 (en) | 2024-06-27 |
| CN117223092A (zh) | 2023-12-12 |
| WO2022225032A1 (ja) | 2022-10-27 |
| KR20230173103A (ko) | 2023-12-26 |
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