JP7768825B2 - エッチング液 - Google Patents
エッチング液Info
- Publication number
- JP7768825B2 JP7768825B2 JP2022070772A JP2022070772A JP7768825B2 JP 7768825 B2 JP7768825 B2 JP 7768825B2 JP 2022070772 A JP2022070772 A JP 2022070772A JP 2022070772 A JP2022070772 A JP 2022070772A JP 7768825 B2 JP7768825 B2 JP 7768825B2
- Authority
- JP
- Japan
- Prior art keywords
- etching solution
- etching
- group
- present disclosure
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021072537 | 2021-04-22 | ||
| JP2021072537 | 2021-04-22 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022167883A JP2022167883A (ja) | 2022-11-04 |
| JP2022167883A5 JP2022167883A5 (enExample) | 2025-03-04 |
| JP7768825B2 true JP7768825B2 (ja) | 2025-11-12 |
Family
ID=83722358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022070772A Active JP7768825B2 (ja) | 2021-04-22 | 2022-04-22 | エッチング液 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240209260A1 (enExample) |
| JP (1) | JP7768825B2 (enExample) |
| KR (1) | KR20230173103A (enExample) |
| CN (1) | CN117223092A (enExample) |
| WO (1) | WO2022225032A1 (enExample) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018085513A (ja) | 2016-11-24 | 2018-05-31 | 三星電子株式会社Samsung Electronics Co.,Ltd. | エッチング組成物、及びそれを利用した集積回路素子の製造方法 |
| JP2018207108A (ja) | 2017-06-05 | 2018-12-27 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液 |
| JP2020068376A (ja) | 2018-10-25 | 2020-04-30 | エスケー イノベーション カンパニー リミテッドSk Innovation Co.,Ltd. | エッチング組成物添加剤、その製造方法及びこれを含むエッチング組成物 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO901662L (no) * | 1989-04-17 | 1990-12-21 | Monsanto Co | Toert herbicid preparat med forbedret vannopploeselighet. |
| WO2020022491A1 (ja) * | 2018-07-27 | 2020-01-30 | 花王株式会社 | 洗浄方法 |
| KR102258307B1 (ko) * | 2018-09-03 | 2021-06-01 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| JP2021086943A (ja) * | 2019-11-28 | 2021-06-03 | 花王株式会社 | エッチング液 |
-
2022
- 2022-04-22 KR KR1020237035570A patent/KR20230173103A/ko active Pending
- 2022-04-22 CN CN202280029695.9A patent/CN117223092A/zh active Pending
- 2022-04-22 WO PCT/JP2022/018503 patent/WO2022225032A1/ja not_active Ceased
- 2022-04-22 JP JP2022070772A patent/JP7768825B2/ja active Active
- 2022-04-22 US US18/287,778 patent/US20240209260A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018085513A (ja) | 2016-11-24 | 2018-05-31 | 三星電子株式会社Samsung Electronics Co.,Ltd. | エッチング組成物、及びそれを利用した集積回路素子の製造方法 |
| JP2018207108A (ja) | 2017-06-05 | 2018-12-27 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液 |
| JP2020068376A (ja) | 2018-10-25 | 2020-04-30 | エスケー イノベーション カンパニー リミテッドSk Innovation Co.,Ltd. | エッチング組成物添加剤、その製造方法及びこれを含むエッチング組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202302817A (zh) | 2023-01-16 |
| KR20230173103A (ko) | 2023-12-26 |
| WO2022225032A1 (ja) | 2022-10-27 |
| JP2022167883A (ja) | 2022-11-04 |
| CN117223092A (zh) | 2023-12-12 |
| US20240209260A1 (en) | 2024-06-27 |
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