CN117223092A - 蚀刻液 - Google Patents
蚀刻液 Download PDFInfo
- Publication number
- CN117223092A CN117223092A CN202280029695.9A CN202280029695A CN117223092A CN 117223092 A CN117223092 A CN 117223092A CN 202280029695 A CN202280029695 A CN 202280029695A CN 117223092 A CN117223092 A CN 117223092A
- Authority
- CN
- China
- Prior art keywords
- etching
- etching solution
- group
- film
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021072537 | 2021-04-22 | ||
| JP2021-072537 | 2021-04-22 | ||
| PCT/JP2022/018503 WO2022225032A1 (ja) | 2021-04-22 | 2022-04-22 | エッチング液 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117223092A true CN117223092A (zh) | 2023-12-12 |
Family
ID=83722358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280029695.9A Pending CN117223092A (zh) | 2021-04-22 | 2022-04-22 | 蚀刻液 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240209260A1 (enExample) |
| JP (1) | JP7768825B2 (enExample) |
| KR (1) | KR20230173103A (enExample) |
| CN (1) | CN117223092A (enExample) |
| WO (1) | WO2022225032A1 (enExample) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109054838A (zh) * | 2017-06-05 | 2018-12-21 | 弗萨姆材料美国有限责任公司 | 用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液 |
| KR20200026716A (ko) * | 2018-09-03 | 2020-03-11 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
| CN112470079A (zh) * | 2018-07-27 | 2021-03-09 | 花王株式会社 | 清洗方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO901662L (no) * | 1989-04-17 | 1990-12-21 | Monsanto Co | Toert herbicid preparat med forbedret vannopploeselighet. |
| US10995269B2 (en) | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
| KR102557642B1 (ko) * | 2018-10-25 | 2023-07-20 | 에스케이이노베이션 주식회사 | 식각 조성물 첨가제, 그 제조방법 및 이를 포함하는 식각 조성물 |
| JP2021086943A (ja) * | 2019-11-28 | 2021-06-03 | 花王株式会社 | エッチング液 |
-
2022
- 2022-04-22 KR KR1020237035570A patent/KR20230173103A/ko active Pending
- 2022-04-22 CN CN202280029695.9A patent/CN117223092A/zh active Pending
- 2022-04-22 WO PCT/JP2022/018503 patent/WO2022225032A1/ja not_active Ceased
- 2022-04-22 JP JP2022070772A patent/JP7768825B2/ja active Active
- 2022-04-22 US US18/287,778 patent/US20240209260A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109054838A (zh) * | 2017-06-05 | 2018-12-21 | 弗萨姆材料美国有限责任公司 | 用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液 |
| CN112470079A (zh) * | 2018-07-27 | 2021-03-09 | 花王株式会社 | 清洗方法 |
| KR20200026716A (ko) * | 2018-09-03 | 2020-03-11 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각 조성물 및 이를 이용한 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202302817A (zh) | 2023-01-16 |
| KR20230173103A (ko) | 2023-12-26 |
| WO2022225032A1 (ja) | 2022-10-27 |
| JP2022167883A (ja) | 2022-11-04 |
| US20240209260A1 (en) | 2024-06-27 |
| JP7768825B2 (ja) | 2025-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |