JP7379060B2 - エッチング液組成物、絶縁膜のエッチング方法及び半導体素子の製造方法 - Google Patents
エッチング液組成物、絶縁膜のエッチング方法及び半導体素子の製造方法 Download PDFInfo
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- JP7379060B2 JP7379060B2 JP2019183147A JP2019183147A JP7379060B2 JP 7379060 B2 JP7379060 B2 JP 7379060B2 JP 2019183147 A JP2019183147 A JP 2019183147A JP 2019183147 A JP2019183147 A JP 2019183147A JP 7379060 B2 JP7379060 B2 JP 7379060B2
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- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims description 48
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- 125000006735 (C1-C20) heteroalkyl group Chemical group 0.000 description 1
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- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
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- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Organic Insulating Materials (AREA)
Description
100mlの丸底フラスコにトリエタノールアミン14.9gとメチルトリエトキシシラン20.0mlを入れた後、130℃に昇温して2時間撹拌した。
100mlの丸底フラスコにトリエタノールアミン14.9gとアミノプロピルトリエトキシシラン23.4mlを入れた後、130℃に昇温して2時間撹拌した。
100mlの丸底フラスコにトリエタノールアミン14.9gと1-[3-(トリメトキシシリル)プロピル]ウレア9.7ml、トルエン20mlを入れた後、110℃に昇温して2時間撹拌した。
100mlの丸底フラスコにトリエタノールアミン15.0gとビス[3-(トリメトキシシリル)プロピル]アミン117.1g、トルエン50ml及び水酸化カリウム0.01gを入れた後、120℃に昇温して2時間撹拌した。
250mlの丸底フラスコに撹拌子を投入し、ディーンースタークトラップを設置した後、N,N’-ビス[(トリメトキシシリル)プロピル]ウレア38gとトリエタノールアミン30gを投入した。
比較例1
リン酸水溶液にエッチング添加剤としてアミノプロピルシラントリオールを添加して、エッチング液組成物を製造した。
リン酸水溶液にエッチング添加剤として上記合成例1から得られたシラン化合物Aを添加して、エッチング液組成物を製造した。
無水リン酸を200℃の温度で加熱して水を完全に除去した。
上記合成例1~5から得られたシラン化合物A~Eを下記表1に示したような含量で用いて無水リン酸とシラン化合物との混合物(添加剤2~7)を製造して用いたこと以外は実施例1と同一の方法でエッチング液組成物を製造した。
各エッチング液組成物において各成分の含量は表1に示した通りである。
パターンが形成されたシリコン半導体ウエハ上に500Åの厚さに蒸着されたシリコン酸化膜(SiOx)と5000Åの厚さに蒸着されたシリコン窒化膜(SiN)が形成された基板を準備した。
表1に示したような比較例1、参考例1及び実施例2、4~7のエッチング液組成物に対して、LPC(Liquid Particle Counter)(KS-42BF、Rion社)装置を利用して溶液内のパーティクル測定を次のような方法で行った。
本発明の比較例1と実施例5のエッチング液組成物を約70℃で一定期間保管した後、上記エッチング液組成物を用いて7日ごとに実験例1と同一の条件で再度エッチングテストを行い、その結果を下記の表4に示した。
Claims (21)
- 前記置換又は非置換されたC1-C20ヒドロカルビル基は置換又は非置換されたC1-C20アルキル基、又は置換又は非置換されたC6-C20アリール基である、請求項1に記載のエッチング液組成物。
- 前記置換されたC1-C20ヒドロカルビル基はハロゲンで置換されたものである、請求項2に記載のエッチング液組成物。
- Aはヒドロカルビル、ヒドロカルビレン、結合部位がNであるラジカル、結合部位がOであるラジカル、結合部位がSであるラジカル又は結合部位がPであるラジカルである、請求項1から3のいずれか一に記載のエッチング液組成物。
- 前記ヒドロカルビルはC1-C20アルキル、C2-C20アルケニル又はC6-C20アリールである、請求項4に記載のエッチング液組成物。
- nは1であり;
Lは直接結合又はC1-C3アルキレンであり、
Aは置換又は非置換されたC1-C20アルキル、置換又は非置換されたC1-C20アルケニル、*-NH2、*-NH-(CH2)l-NH2、*-NH-CO-NH2、又は*-(CH2)m-C6H5であり、l及びmは独立して0~10の整数である、請求項1から4のいずれか一に記載のエッチング液組成物。 - 前記R1~R6は水素である、請求項1から12のいずれか一に記載のエッチング液組成物。
- 前記R1は置換又は非置換されたヒドロカルビルであり、R2~R6は水素である、請求項1から12のいずれか一に記載のエッチング液組成物。
- 前記無水リン酸は水分が除去された正リン酸、ピロリン酸、P3以上のポリリン酸及びメタリン酸のうち少なくとも一つである、請求項1から15のいずれか一に記載のエッチング液組成物。
- リン酸70~95重量%、無水リン酸1~20重量%、化学式1で表されるシラン化合物0.001~5重量%及び残部の水を含む、請求項1から16のいずれか一に記載のエッチング液組成物。
- アンモニウム塩をさらに含む、請求項1から18のいずれか一項に記載のエッチング液組成物。
- 請求項1から19のいずれか一項に記載のエッチング液組成物を利用した、絶縁膜のエッチング方法。
- 請求項20に記載の絶縁膜のエッチング方法を含む、半導体素子の製造方法。
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