TWI846629B - 蝕刻方法、電漿處理裝置及基板處理系統 - Google Patents

蝕刻方法、電漿處理裝置及基板處理系統 Download PDF

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Publication number
TWI846629B
TWI846629B TW112141177A TW112141177A TWI846629B TW I846629 B TWI846629 B TW I846629B TW 112141177 A TW112141177 A TW 112141177A TW 112141177 A TW112141177 A TW 112141177A TW I846629 B TWI846629 B TW I846629B
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Taiwan
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region
gas
substrate
chamber
plasma
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TW112141177A
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Chinese (zh)
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TW202407804A (zh
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佐藤𤥨磨
吉村正太
森北信也
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Plasma Technology (AREA)
TW112141177A 2020-09-18 2021-09-03 蝕刻方法、電漿處理裝置及基板處理系統 TWI846629B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2020157290 2020-09-18
JP2020-157290 2020-09-18
JP2020185206 2020-11-05
JP2020-185206 2020-11-05
JP2021029988 2021-02-26
JP2021-029988 2021-02-26
US202163162739P 2021-03-18 2021-03-18
US63/162,739 2021-03-18

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TW202407804A TW202407804A (zh) 2024-02-16
TWI846629B true TWI846629B (zh) 2024-06-21

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TW112141177A TWI846629B (zh) 2020-09-18 2021-09-03 蝕刻方法、電漿處理裝置及基板處理系統
TW110132749A TWI797739B (zh) 2020-09-18 2021-09-03 蝕刻方法、電漿處理裝置及基板處理系統
TW112105825A TWI824939B (zh) 2020-09-18 2021-09-03 蝕刻方法、電漿處理裝置及基板處理系統

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TW110132749A TWI797739B (zh) 2020-09-18 2021-09-03 蝕刻方法、電漿處理裝置及基板處理系統
TW112105825A TWI824939B (zh) 2020-09-18 2021-09-03 蝕刻方法、電漿處理裝置及基板處理系統

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US (1) US20220351981A1 (enExample)
JP (3) JP7123287B1 (enExample)
KR (2) KR20230124754A (enExample)
CN (2) CN117577524A (enExample)
TW (3) TWI846629B (enExample)
WO (1) WO2022059440A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12347645B2 (en) * 2021-04-27 2025-07-01 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202022944A (zh) * 2018-08-21 2020-06-16 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
TW202027161A (zh) * 2018-08-24 2020-07-16 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06349788A (ja) * 1993-06-08 1994-12-22 Mitsubishi Electric Corp エッチング方法
US6228775B1 (en) * 1998-02-24 2001-05-08 Micron Technology, Inc. Plasma etching method using low ionization potential gas
JP2000164571A (ja) * 1998-11-27 2000-06-16 Sony Corp コンタクトホール形成方法およびプラズマエッチング方法
JP2001291661A (ja) * 2000-04-07 2001-10-19 Fujitsu Ltd 反射型マスク製造方法
TW502300B (en) * 2001-09-28 2002-09-11 Macronix Int Co Ltd Method of reducing pattern spacing or opening dimension
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
CN100505176C (zh) * 2002-10-24 2009-06-24 朗姆研究公司 在薄膜的等离子体蚀刻过程中探测终止点的方法和装置
WO2004061919A1 (en) * 2002-12-23 2004-07-22 Tokyo Electron Limited Method and apparatus for bilayer photoresist dry development
US6991991B2 (en) * 2003-11-12 2006-01-31 United Microelectronics Corp. Method for preventing to form a spacer undercut in SEG pre-clean process
KR100621562B1 (ko) * 2004-07-30 2006-09-14 삼성전자주식회사 Ｃｏ 가스에 의해 형성된 선택적 폴리머 마스크를사용하는 건식 식각 방법
US7560387B2 (en) * 2006-01-25 2009-07-14 International Business Machines Corporation Opening hard mask and SOI substrate in single process chamber
KR20090038151A (ko) * 2007-10-15 2009-04-20 주식회사 하이닉스반도체 반도체 소자의 콘택홀 제조방법
KR101662702B1 (ko) * 2009-12-31 2016-10-06 삼성전자 주식회사 반도체 소자의 제조 방법
JP5471630B2 (ja) * 2010-03-10 2014-04-16 凸版印刷株式会社 極端紫外線露光用マスクの製造方法
JP2012028431A (ja) * 2010-07-21 2012-02-09 Toshiba Corp 半導体装置の製造方法
JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5694022B2 (ja) * 2011-03-22 2015-04-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体
JP5981106B2 (ja) * 2011-07-12 2016-08-31 東京エレクトロン株式会社 プラズマエッチング方法
JP2014082228A (ja) * 2012-10-12 2014-05-08 Tokyo Electron Ltd プラズマエッチング方法
US9117855B2 (en) * 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
JP6396699B2 (ja) 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
KR101675219B1 (ko) 2015-03-16 2016-11-10 김성직 모터용 페라이트 마그네틱 길이 가공장치
KR102307983B1 (ko) * 2015-06-16 2021-09-30 버슘머트리얼즈 유에스, 엘엘씨 할라이도실란 화합물 및 조성물 및 이를 사용하여 규소-함유 막을 증착시키기 위한 공정
JP2017092376A (ja) * 2015-11-16 2017-05-25 東京エレクトロン株式会社 エッチング方法
JP6592400B2 (ja) * 2016-05-19 2019-10-16 東京エレクトロン株式会社 エッチング方法
WO2019055393A1 (en) * 2017-09-14 2019-03-21 Versum Material Us, Llc COMPOSITIONS AND METHODS FOR DEPOSITION OF FILMS CONTAINING SILICON
JP7071884B2 (ja) * 2018-06-15 2022-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2020088174A (ja) * 2018-11-26 2020-06-04 東京エレクトロン株式会社 エッチング方法及び基板処理装置
JP7229750B2 (ja) * 2018-12-14 2023-02-28 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7174634B2 (ja) * 2019-01-18 2022-11-17 東京エレクトロン株式会社 膜をエッチングする方法
JP7308110B2 (ja) * 2019-09-17 2023-07-13 東京エレクトロン株式会社 シリコン酸化膜をエッチングする方法及びプラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202022944A (zh) * 2018-08-21 2020-06-16 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
TW202027161A (zh) * 2018-08-24 2020-07-16 日商東京威力科創股份有限公司 蝕刻方法及電漿處理裝置

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KR102568003B1 (ko) 2023-08-16
KR20220103120A (ko) 2022-07-21
JP7123287B1 (ja) 2022-08-22
CN117577524A (zh) 2024-02-20
JPWO2022059440A1 (enExample) 2022-03-24
CN114762091A (zh) 2022-07-15
TWI824939B (zh) 2023-12-01
US20220351981A1 (en) 2022-11-03
KR20230124754A (ko) 2023-08-25
TW202407804A (zh) 2024-02-16
WO2022059440A1 (ja) 2022-03-24
TWI797739B (zh) 2023-04-01
JP2024159784A (ja) 2024-11-08
CN114762091B (zh) 2023-12-15
TW202215530A (zh) 2022-04-16
JP2022161940A (ja) 2022-10-21
TW202324534A (zh) 2023-06-16

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