JP7123287B1 - エッチング方法、プラズマ処理装置、基板処理システム、及びプログラム - Google Patents

エッチング方法、プラズマ処理装置、基板処理システム、及びプログラム Download PDF

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JP7123287B1
JP7123287B1 JP2022524208A JP2022524208A JP7123287B1 JP 7123287 B1 JP7123287 B1 JP 7123287B1 JP 2022524208 A JP2022524208 A JP 2022524208A JP 2022524208 A JP2022524208 A JP 2022524208A JP 7123287 B1 JP7123287 B1 JP 7123287B1
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substrate
processing apparatus
chamber
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JPWO2022059440A5 (ja
JPWO2022059440A1 (enExample
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琢磨 佐藤
正太 吉村
信也 森北
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H10P50/283—
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P14/69215—
    • H10P50/695—
    • H10P50/73—
    • H10P72/0421—
    • H10P72/0432—
    • H10P72/0451—
    • H10P72/0454—
    • H10P72/0462—
    • H10P72/0464—
    • H10P72/722—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Plasma Technology (AREA)
JP2022524208A 2020-09-18 2021-08-24 エッチング方法、プラズマ処理装置、基板処理システム、及びプログラム Active JP7123287B1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2022126348A JP2022161940A (ja) 2020-09-18 2022-08-08 エッチング方法及びプラズマ処理装置
JP2024135436A JP2024159784A (ja) 2020-09-18 2024-08-14 エッチング方法及びプラズマ処理装置

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2020157290 2020-09-18
JP2020157290 2020-09-18
JP2020185206 2020-11-05
JP2020185206 2020-11-05
JP2021029988 2021-02-26
JP2021029988 2021-02-26
US202163162739P 2021-03-18 2021-03-18
US63/162739 2021-03-18
PCT/JP2021/031030 WO2022059440A1 (ja) 2020-09-18 2021-08-24 エッチング方法、プラズマ処理装置、及び基板処理システム

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JP2022126348A Pending JP2022161940A (ja) 2020-09-18 2022-08-08 エッチング方法及びプラズマ処理装置
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US (1) US20220351981A1 (enExample)
JP (3) JP7123287B1 (enExample)
KR (2) KR20230124754A (enExample)
CN (2) CN114762091B (enExample)
TW (3) TWI824939B (enExample)
WO (1) WO2022059440A1 (enExample)

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Publication number Priority date Publication date Assignee Title
US12347645B2 (en) * 2021-04-27 2025-07-01 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

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WO2020040005A1 (ja) * 2018-08-24 2020-02-27 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
JP2020119918A (ja) * 2019-01-18 2020-08-06 東京エレクトロン株式会社 膜をエッチングする方法

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KR20230124754A (ko) 2023-08-25
TWI824939B (zh) 2023-12-01
JP2024159784A (ja) 2024-11-08
TWI797739B (zh) 2023-04-01
US20220351981A1 (en) 2022-11-03
WO2022059440A1 (ja) 2022-03-24
TW202324534A (zh) 2023-06-16
TWI846629B (zh) 2024-06-21
CN117577524A (zh) 2024-02-20
KR102568003B1 (ko) 2023-08-16
JP2022161940A (ja) 2022-10-21
TW202407804A (zh) 2024-02-16
JPWO2022059440A1 (enExample) 2022-03-24
KR20220103120A (ko) 2022-07-21
CN114762091A (zh) 2022-07-15
CN114762091B (zh) 2023-12-15
TW202215530A (zh) 2022-04-16

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