CN114762091B - 蚀刻方法、等离子体处理装置、基板处理系统以及存储介质 - Google Patents

蚀刻方法、等离子体处理装置、基板处理系统以及存储介质 Download PDF

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CN114762091B
CN114762091B CN202180006822.9A CN202180006822A CN114762091B CN 114762091 B CN114762091 B CN 114762091B CN 202180006822 A CN202180006822 A CN 202180006822A CN 114762091 B CN114762091 B CN 114762091B
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gas
substrate
processing apparatus
chamber
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CN114762091A (zh
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佐藤琢磨
吉村正太
森北信也
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H10P50/283—
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P14/69215—
    • H10P50/695—
    • H10P50/73—
    • H10P72/0421—
    • H10P72/0432—
    • H10P72/0451—
    • H10P72/0454—
    • H10P72/0462—
    • H10P72/0464—
    • H10P72/722—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Plasma Technology (AREA)
CN202180006822.9A 2020-09-18 2021-08-24 蚀刻方法、等离子体处理装置、基板处理系统以及存储介质 Active CN114762091B (zh)

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CN202311626120.8A CN117577524A (zh) 2020-09-18 2021-08-24 蚀刻方法和等离子体处理装置

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JP2020-157290 2020-09-18
JP2020157290 2020-09-18
JP2020185206 2020-11-05
JP2020-185206 2020-11-05
JP2021-029988 2021-02-26
JP2021029988 2021-02-26
US202163162739P 2021-03-18 2021-03-18
US63/162,739 2021-03-18
PCT/JP2021/031030 WO2022059440A1 (ja) 2020-09-18 2021-08-24 エッチング方法、プラズマ処理装置、及び基板処理システム

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US (1) US20220351981A1 (enExample)
JP (3) JP7123287B1 (enExample)
KR (2) KR20230124754A (enExample)
CN (2) CN114762091B (enExample)
TW (3) TWI824939B (enExample)
WO (1) WO2022059440A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12347645B2 (en) * 2021-04-27 2025-07-01 Tokyo Electron Limited Substrate processing method and substrate processing apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164571A (ja) * 1998-11-27 2000-06-16 Sony Corp コンタクトホール形成方法およびプラズマエッチング方法
CN1708837A (zh) * 2002-10-24 2005-12-14 朗姆研究公司 在薄膜的等离子体蚀刻过程中探测终止点的方法和装置
WO2017199946A1 (ja) * 2016-05-19 2017-11-23 東京エレクトロン株式会社 エッチング方法
WO2020040005A1 (ja) * 2018-08-24 2020-02-27 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
CN111463123A (zh) * 2019-01-18 2020-07-28 东京毅力科创株式会社 蚀刻膜的方法
CN112530799A (zh) * 2019-09-17 2021-03-19 东京毅力科创株式会社 蚀刻氧化硅膜的方法及等离子体处理装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06349788A (ja) * 1993-06-08 1994-12-22 Mitsubishi Electric Corp エッチング方法
US6228775B1 (en) * 1998-02-24 2001-05-08 Micron Technology, Inc. Plasma etching method using low ionization potential gas
JP2001291661A (ja) * 2000-04-07 2001-10-19 Fujitsu Ltd 反射型マスク製造方法
TW502300B (en) * 2001-09-28 2002-09-11 Macronix Int Co Ltd Method of reducing pattern spacing or opening dimension
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
AU2003297861A1 (en) * 2002-12-23 2004-07-29 Tokyo Electron Limited Method and apparatus for bilayer photoresist dry development
US6991991B2 (en) * 2003-11-12 2006-01-31 United Microelectronics Corp. Method for preventing to form a spacer undercut in SEG pre-clean process
KR100621562B1 (ko) * 2004-07-30 2006-09-14 삼성전자주식회사 Ｃｏ 가스에 의해 형성된 선택적 폴리머 마스크를사용하는 건식 식각 방법
US7560387B2 (en) * 2006-01-25 2009-07-14 International Business Machines Corporation Opening hard mask and SOI substrate in single process chamber
KR20090038151A (ko) * 2007-10-15 2009-04-20 주식회사 하이닉스반도체 반도체 소자의 콘택홀 제조방법
KR101662702B1 (ko) * 2009-12-31 2016-10-06 삼성전자 주식회사 반도체 소자의 제조 방법
JP5471630B2 (ja) * 2010-03-10 2014-04-16 凸版印刷株式会社 極端紫外線露光用マスクの製造方法
JP2012028431A (ja) * 2010-07-21 2012-02-09 Toshiba Corp 半導体装置の製造方法
JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5694022B2 (ja) * 2011-03-22 2015-04-01 東京エレクトロン株式会社 基板処理方法及び記憶媒体
JP5981106B2 (ja) * 2011-07-12 2016-08-31 東京エレクトロン株式会社 プラズマエッチング方法
JP2014082228A (ja) * 2012-10-12 2014-05-08 Tokyo Electron Ltd プラズマエッチング方法
US9117855B2 (en) * 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
JP6396699B2 (ja) 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
KR101675219B1 (ko) 2015-03-16 2016-11-10 김성직 모터용 페라이트 마그네틱 길이 가공장치
KR102307983B1 (ko) * 2015-06-16 2021-09-30 버슘머트리얼즈 유에스, 엘엘씨 할라이도실란 화합물 및 조성물 및 이를 사용하여 규소-함유 막을 증착시키기 위한 공정
JP2017092376A (ja) * 2015-11-16 2017-05-25 東京エレクトロン株式会社 エッチング方法
EP3682041B1 (en) * 2017-09-14 2022-04-20 Versum Materials US, LLC Methods for depositing silicon-containing films
JP7071884B2 (ja) * 2018-06-15 2022-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP7198609B2 (ja) * 2018-08-21 2023-01-04 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2020088174A (ja) * 2018-11-26 2020-06-04 東京エレクトロン株式会社 エッチング方法及び基板処理装置
JP7229750B2 (ja) * 2018-12-14 2023-02-28 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164571A (ja) * 1998-11-27 2000-06-16 Sony Corp コンタクトホール形成方法およびプラズマエッチング方法
CN1708837A (zh) * 2002-10-24 2005-12-14 朗姆研究公司 在薄膜的等离子体蚀刻过程中探测终止点的方法和装置
WO2017199946A1 (ja) * 2016-05-19 2017-11-23 東京エレクトロン株式会社 エッチング方法
CN109196624A (zh) * 2016-05-19 2019-01-11 东京毅力科创株式会社 蚀刻方法
WO2020040005A1 (ja) * 2018-08-24 2020-02-27 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
CN111463123A (zh) * 2019-01-18 2020-07-28 东京毅力科创株式会社 蚀刻膜的方法
JP2020119918A (ja) * 2019-01-18 2020-08-06 東京エレクトロン株式会社 膜をエッチングする方法
CN112530799A (zh) * 2019-09-17 2021-03-19 东京毅力科创株式会社 蚀刻氧化硅膜的方法及等离子体处理装置

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KR20230124754A (ko) 2023-08-25
TWI824939B (zh) 2023-12-01
JP2024159784A (ja) 2024-11-08
TWI797739B (zh) 2023-04-01
US20220351981A1 (en) 2022-11-03
WO2022059440A1 (ja) 2022-03-24
TW202324534A (zh) 2023-06-16
TWI846629B (zh) 2024-06-21
CN117577524A (zh) 2024-02-20
KR102568003B1 (ko) 2023-08-16
JP2022161940A (ja) 2022-10-21
TW202407804A (zh) 2024-02-16
JPWO2022059440A1 (enExample) 2022-03-24
KR20220103120A (ko) 2022-07-21
CN114762091A (zh) 2022-07-15
JP7123287B1 (ja) 2022-08-22
TW202215530A (zh) 2022-04-16

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