JP2022074000A5 - - Google Patents
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- Publication number
- JP2022074000A5 JP2022074000A5 JP2021163664A JP2021163664A JP2022074000A5 JP 2022074000 A5 JP2022074000 A5 JP 2022074000A5 JP 2021163664 A JP2021163664 A JP 2021163664A JP 2021163664 A JP2021163664 A JP 2021163664A JP 2022074000 A5 JP2022074000 A5 JP 2022074000A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon
- voltage
- negative
- substrate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims description 243
- 238000000034 method Methods 0.000 claims description 170
- 239000000758 substrate Substances 0.000 claims description 170
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 119
- 238000005530 etching Methods 0.000 claims description 115
- 229910052710 silicon Inorganic materials 0.000 claims description 102
- 239000010703 silicon Substances 0.000 claims description 102
- 238000012545 processing Methods 0.000 claims description 81
- 230000008569 process Effects 0.000 claims description 71
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 36
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910052799 carbon Inorganic materials 0.000 claims description 21
- 229910052721 tungsten Inorganic materials 0.000 claims description 21
- 239000010937 tungsten Substances 0.000 claims description 21
- 229910052731 fluorine Inorganic materials 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 10
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- PRPAGESBURMWTI-UHFFFAOYSA-N [C].[F] Chemical compound [C].[F] PRPAGESBURMWTI-UHFFFAOYSA-N 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 6
- 229920005591 polysilicon Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000013626 chemical specie Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- -1 fluorine ions Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021163664A JP7309799B2 (ja) | 2020-10-30 | 2021-10-04 | エッチング方法及びプラズマ処理装置 |
| TW110138668A TW202232567A (zh) | 2020-10-30 | 2021-10-19 | 蝕刻方法及電漿處理裝置 |
| KR1020210141033A KR20220058433A (ko) | 2020-10-30 | 2021-10-21 | 에칭 방법 및 플라즈마 처리 장치 |
| CN202111228868.3A CN114446778A (zh) | 2020-10-30 | 2021-10-21 | 蚀刻方法和等离子体处理装置 |
| US17/514,888 US12198937B2 (en) | 2020-10-30 | 2021-10-29 | Etching method and plasma processing apparatus |
| JP2023110641A JP7556099B2 (ja) | 2020-10-30 | 2023-07-05 | プラズマ処理装置 |
| JP2024157382A JP7774687B2 (ja) | 2020-10-30 | 2024-09-11 | プラズマ処理装置 |
| US19/017,838 US20250149342A1 (en) | 2020-10-30 | 2025-01-13 | Etching method and plasma processing apparatus |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020182345 | 2020-10-30 | ||
| JP2020182345 | 2020-10-30 | ||
| JP2021163664A JP7309799B2 (ja) | 2020-10-30 | 2021-10-04 | エッチング方法及びプラズマ処理装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023110641A Division JP7556099B2 (ja) | 2020-10-30 | 2023-07-05 | プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022074000A JP2022074000A (ja) | 2022-05-17 |
| JP2022074000A5 true JP2022074000A5 (enExample) | 2023-02-16 |
| JP7309799B2 JP7309799B2 (ja) | 2023-07-18 |
Family
ID=81362488
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021163664A Active JP7309799B2 (ja) | 2020-10-30 | 2021-10-04 | エッチング方法及びプラズマ処理装置 |
| JP2023110641A Active JP7556099B2 (ja) | 2020-10-30 | 2023-07-05 | プラズマ処理装置 |
| JP2024157382A Active JP7774687B2 (ja) | 2020-10-30 | 2024-09-11 | プラズマ処理装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023110641A Active JP7556099B2 (ja) | 2020-10-30 | 2023-07-05 | プラズマ処理装置 |
| JP2024157382A Active JP7774687B2 (ja) | 2020-10-30 | 2024-09-11 | プラズマ処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12198937B2 (enExample) |
| JP (3) | JP7309799B2 (enExample) |
| KR (1) | KR20220058433A (enExample) |
| CN (1) | CN114446778A (enExample) |
| TW (1) | TW202232567A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210210355A1 (en) * | 2020-01-08 | 2021-07-08 | Tokyo Electron Limited | Methods of Plasma Processing Using a Pulsed Electron Beam |
| JP2024053900A (ja) * | 2022-10-04 | 2024-04-16 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20240332029A1 (en) * | 2023-03-28 | 2024-10-03 | Tokyo Electron Limited | High aspect ratio contact etching with additive gas |
| US20250293041A1 (en) * | 2024-03-12 | 2025-09-18 | Tokyo Electron Limited | Cyclic etch/deposition plasma processes using tungsten based precursor gas |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0950984A (ja) | 1995-08-07 | 1997-02-18 | Hitachi Ltd | 表面処理方法 |
| JP6230930B2 (ja) * | 2014-02-17 | 2017-11-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6883495B2 (ja) * | 2017-09-04 | 2021-06-09 | 東京エレクトロン株式会社 | エッチング方法 |
| JP7061922B2 (ja) | 2018-04-27 | 2022-05-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP6965205B2 (ja) | 2018-04-27 | 2021-11-10 | 東京エレクトロン株式会社 | エッチング装置、及びエッチング方法 |
| US10515821B1 (en) | 2018-06-26 | 2019-12-24 | Lam Research Corporation | Method of achieving high selectivity for high aspect ratio dielectric etch |
| US10741407B2 (en) | 2018-10-19 | 2020-08-11 | Lam Research Corporation | Reduction of sidewall notching for high aspect ratio 3D NAND etch |
| CN113228830B (zh) | 2019-01-09 | 2024-10-01 | 东京毅力科创株式会社 | 等离子体处理装置及等离子体处理方法 |
-
2021
- 2021-10-04 JP JP2021163664A patent/JP7309799B2/ja active Active
- 2021-10-19 TW TW110138668A patent/TW202232567A/zh unknown
- 2021-10-21 CN CN202111228868.3A patent/CN114446778A/zh active Pending
- 2021-10-21 KR KR1020210141033A patent/KR20220058433A/ko active Pending
- 2021-10-29 US US17/514,888 patent/US12198937B2/en active Active
-
2023
- 2023-07-05 JP JP2023110641A patent/JP7556099B2/ja active Active
-
2024
- 2024-09-11 JP JP2024157382A patent/JP7774687B2/ja active Active
-
2025
- 2025-01-13 US US19/017,838 patent/US20250149342A1/en active Pending
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