JP7309799B2 - エッチング方法及びプラズマ処理装置 - Google Patents

エッチング方法及びプラズマ処理装置 Download PDF

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JP7309799B2
JP7309799B2 JP2021163664A JP2021163664A JP7309799B2 JP 7309799 B2 JP7309799 B2 JP 7309799B2 JP 2021163664 A JP2021163664 A JP 2021163664A JP 2021163664 A JP2021163664 A JP 2021163664A JP 7309799 B2 JP7309799 B2 JP 7309799B2
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gas
silicon
substrate support
voltage
negative
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Japanese (ja)
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JP2022074000A5 (enExample
JP2022074000A (ja
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光貴 千野
彦一郎 佐々木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2021163664A priority Critical patent/JP7309799B2/ja
Priority to TW110138668A priority patent/TW202232567A/zh
Priority to CN202111228868.3A priority patent/CN114446778A/zh
Priority to KR1020210141033A priority patent/KR20220058433A/ko
Priority to US17/514,888 priority patent/US12198937B2/en
Publication of JP2022074000A publication Critical patent/JP2022074000A/ja
Publication of JP2022074000A5 publication Critical patent/JP2022074000A5/ja
Priority to JP2023110641A priority patent/JP7556099B2/ja
Application granted granted Critical
Publication of JP7309799B2 publication Critical patent/JP7309799B2/ja
Priority to JP2024157382A priority patent/JP7774687B2/ja
Priority to US19/017,838 priority patent/US20250149342A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2021163664A 2020-10-30 2021-10-04 エッチング方法及びプラズマ処理装置 Active JP7309799B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2021163664A JP7309799B2 (ja) 2020-10-30 2021-10-04 エッチング方法及びプラズマ処理装置
TW110138668A TW202232567A (zh) 2020-10-30 2021-10-19 蝕刻方法及電漿處理裝置
KR1020210141033A KR20220058433A (ko) 2020-10-30 2021-10-21 에칭 방법 및 플라즈마 처리 장치
CN202111228868.3A CN114446778A (zh) 2020-10-30 2021-10-21 蚀刻方法和等离子体处理装置
US17/514,888 US12198937B2 (en) 2020-10-30 2021-10-29 Etching method and plasma processing apparatus
JP2023110641A JP7556099B2 (ja) 2020-10-30 2023-07-05 プラズマ処理装置
JP2024157382A JP7774687B2 (ja) 2020-10-30 2024-09-11 プラズマ処理装置
US19/017,838 US20250149342A1 (en) 2020-10-30 2025-01-13 Etching method and plasma processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020182345 2020-10-30
JP2020182345 2020-10-30
JP2021163664A JP7309799B2 (ja) 2020-10-30 2021-10-04 エッチング方法及びプラズマ処理装置

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JP2023110641A Division JP7556099B2 (ja) 2020-10-30 2023-07-05 プラズマ処理装置

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JP2022074000A JP2022074000A (ja) 2022-05-17
JP2022074000A5 JP2022074000A5 (enExample) 2023-02-16
JP7309799B2 true JP7309799B2 (ja) 2023-07-18

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JP2023110641A Active JP7556099B2 (ja) 2020-10-30 2023-07-05 プラズマ処理装置
JP2024157382A Active JP7774687B2 (ja) 2020-10-30 2024-09-11 プラズマ処理装置

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JP2024157382A Active JP7774687B2 (ja) 2020-10-30 2024-09-11 プラズマ処理装置

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US (2) US12198937B2 (enExample)
JP (3) JP7309799B2 (enExample)
KR (1) KR20220058433A (enExample)
CN (1) CN114446778A (enExample)
TW (1) TW202232567A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210210355A1 (en) * 2020-01-08 2021-07-08 Tokyo Electron Limited Methods of Plasma Processing Using a Pulsed Electron Beam
JP2024053900A (ja) * 2022-10-04 2024-04-16 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20240332029A1 (en) * 2023-03-28 2024-10-03 Tokyo Electron Limited High aspect ratio contact etching with additive gas
US20250293041A1 (en) * 2024-03-12 2025-09-18 Tokyo Electron Limited Cyclic etch/deposition plasma processes using tungsten based precursor gas

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019192876A (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2019192874A (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 エッチング装置、及びエッチング方法
US20200090945A1 (en) 2018-06-26 2020-03-19 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
US20200126804A1 (en) 2018-10-19 2020-04-23 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3d nand etch
WO2020145051A1 (ja) 2019-01-09 2020-07-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950984A (ja) 1995-08-07 1997-02-18 Hitachi Ltd 表面処理方法
JP6230930B2 (ja) * 2014-02-17 2017-11-15 東京エレクトロン株式会社 半導体装置の製造方法
JP6883495B2 (ja) * 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019192876A (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2019192874A (ja) 2018-04-27 2019-10-31 東京エレクトロン株式会社 エッチング装置、及びエッチング方法
US20200090945A1 (en) 2018-06-26 2020-03-19 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
US20200126804A1 (en) 2018-10-19 2020-04-23 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3d nand etch
WO2020145051A1 (ja) 2019-01-09 2020-07-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

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JP7774687B2 (ja) 2025-11-21
KR20220058433A (ko) 2022-05-09
CN114446778A (zh) 2022-05-06
US20250149342A1 (en) 2025-05-08
TW202232567A (zh) 2022-08-16
JP2023118883A (ja) 2023-08-25
US12198937B2 (en) 2025-01-14
JP7556099B2 (ja) 2024-09-25
JP2022074000A (ja) 2022-05-17
US20220139719A1 (en) 2022-05-05
JP2024167422A (ja) 2024-12-03

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