TWI833930B - 乾式蝕刻方法及半導體裝置之製造方法 - Google Patents

乾式蝕刻方法及半導體裝置之製造方法 Download PDF

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Publication number
TWI833930B
TWI833930B TW109108918A TW109108918A TWI833930B TW I833930 B TWI833930 B TW I833930B TW 109108918 A TW109108918 A TW 109108918A TW 109108918 A TW109108918 A TW 109108918A TW I833930 B TWI833930 B TW I833930B
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TW
Taiwan
Prior art keywords
gas
etching method
dry etching
dry
substrate
Prior art date
Application number
TW109108918A
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English (en)
Chinese (zh)
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TW202100805A (zh
Inventor
大森啓之
古谷俊太
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日商中央硝子股份有限公司
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Publication of TW202100805A publication Critical patent/TW202100805A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW109108918A 2019-03-22 2020-03-18 乾式蝕刻方法及半導體裝置之製造方法 TWI833930B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019054437 2019-03-22
JP2019-054437 2019-03-22

Publications (2)

Publication Number Publication Date
TW202100805A TW202100805A (zh) 2021-01-01
TWI833930B true TWI833930B (zh) 2024-03-01

Family

ID=72609015

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109108918A TWI833930B (zh) 2019-03-22 2020-03-18 乾式蝕刻方法及半導體裝置之製造方法

Country Status (7)

Country Link
US (1) US12154791B2 (https=)
JP (1) JP7445150B2 (https=)
KR (1) KR102765856B1 (https=)
CN (1) CN113614891A (https=)
SG (1) SG11202109169TA (https=)
TW (1) TWI833930B (https=)
WO (1) WO2020195559A1 (https=)

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* Cited by examiner, † Cited by third party
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KR102927170B1 (ko) * 2021-03-24 2026-02-11 삼성전자 주식회사 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법
US12087593B2 (en) * 2022-06-15 2024-09-10 Nanya Technology Corporation Method of plasma etching
CN115404552B (zh) * 2022-11-01 2023-02-03 清华大学 一种极低气压反应腔下的侧壁钝化侧蚀动态平衡深刻蚀光子晶体结构制备方法
US20250079127A1 (en) * 2023-08-28 2025-03-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Dielectric plasma etching using c2h2f2
US20250079183A1 (en) * 2023-08-28 2025-03-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Cryogenic plasma etching using c2h2f2

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100216314A1 (en) * 2009-02-20 2010-08-26 Tokyo Electron Limited Substrate processing method
TW201709321A (zh) * 2015-08-12 2017-03-01 中央硝子股份有限公司 乾式蝕刻方法
TW201835016A (zh) * 2016-08-25 2018-10-01 日本瑞翁股份有限公司 電漿蝕刻方法
TW201835383A (zh) * 2017-02-28 2018-10-01 日商中央硝子股份有限公司 乾式蝕刻劑、乾式蝕刻方法及半導體裝置之製造方法

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JP3336975B2 (ja) 1998-03-27 2002-10-21 日本電気株式会社 基板処理方法
JP5407101B2 (ja) * 2000-09-07 2014-02-05 ダイキン工業株式会社 ドライエッチングガスおよびドライエッチング方法
JP4761502B2 (ja) 2004-10-07 2011-08-31 株式会社アルバック 層間絶縁膜のドライエッチング方法
US20070047699A1 (en) 2005-08-29 2007-03-01 Nortel Networks Limited Separation of session and session control
TWI437633B (zh) * 2006-05-24 2014-05-11 愛發科股份有限公司 Dry etching method for interlayer insulating film
JP2009123866A (ja) 2007-11-14 2009-06-04 Nec Electronics Corp 半導体装置の製造方法、および被エッチング膜の加工方法
JP6604833B2 (ja) 2015-12-03 2019-11-13 東京エレクトロン株式会社 プラズマエッチング方法
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US20180286707A1 (en) * 2017-03-30 2018-10-04 Lam Research Corporation Gas additives for sidewall passivation during high aspect ratio cryogenic etch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100216314A1 (en) * 2009-02-20 2010-08-26 Tokyo Electron Limited Substrate processing method
TW201709321A (zh) * 2015-08-12 2017-03-01 中央硝子股份有限公司 乾式蝕刻方法
TW201835016A (zh) * 2016-08-25 2018-10-01 日本瑞翁股份有限公司 電漿蝕刻方法
TW201835383A (zh) * 2017-02-28 2018-10-01 日商中央硝子股份有限公司 乾式蝕刻劑、乾式蝕刻方法及半導體裝置之製造方法

Also Published As

Publication number Publication date
CN113614891A (zh) 2021-11-05
US20220157614A1 (en) 2022-05-19
JPWO2020195559A1 (https=) 2020-10-01
TW202100805A (zh) 2021-01-01
US12154791B2 (en) 2024-11-26
JP7445150B2 (ja) 2024-03-07
SG11202109169TA (en) 2021-09-29
WO2020195559A1 (ja) 2020-10-01
KR102765856B1 (ko) 2025-02-11
KR20210136102A (ko) 2021-11-16

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