KR102765856B1 - 드라이 에칭 방법 및 반도체 디바이스의 제조 방법 - Google Patents

드라이 에칭 방법 및 반도체 디바이스의 제조 방법 Download PDF

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Publication number
KR102765856B1
KR102765856B1 KR1020217032482A KR20217032482A KR102765856B1 KR 102765856 B1 KR102765856 B1 KR 102765856B1 KR 1020217032482 A KR1020217032482 A KR 1020217032482A KR 20217032482 A KR20217032482 A KR 20217032482A KR 102765856 B1 KR102765856 B1 KR 102765856B1
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South Korea
Prior art keywords
gas
dry etching
etching
paragraph
film
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Korean (ko)
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KR20210136102A (ko
Inventor
히로유키 오오모리
슌타 후루타니
šœ타 후루타니
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샌트랄 글래스 컴퍼니 리미티드
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    • H01L21/31116—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • H01L21/02063—
    • H01L21/02164—
    • H01L21/0217—
    • H01L21/31144—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020217032482A 2019-03-22 2020-03-02 드라이 에칭 방법 및 반도체 디바이스의 제조 방법 Active KR102765856B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019054437 2019-03-22
JPJP-P-2019-054437 2019-03-22
PCT/JP2020/008570 WO2020195559A1 (ja) 2019-03-22 2020-03-02 ドライエッチング方法及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20210136102A KR20210136102A (ko) 2021-11-16
KR102765856B1 true KR102765856B1 (ko) 2025-02-11

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KR1020217032482A Active KR102765856B1 (ko) 2019-03-22 2020-03-02 드라이 에칭 방법 및 반도체 디바이스의 제조 방법

Country Status (7)

Country Link
US (1) US12154791B2 (https=)
JP (1) JP7445150B2 (https=)
KR (1) KR102765856B1 (https=)
CN (1) CN113614891A (https=)
SG (1) SG11202109169TA (https=)
TW (1) TWI833930B (https=)
WO (1) WO2020195559A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102927170B1 (ko) * 2021-03-24 2026-02-11 삼성전자 주식회사 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법
US12087593B2 (en) * 2022-06-15 2024-09-10 Nanya Technology Corporation Method of plasma etching
CN115404552B (zh) * 2022-11-01 2023-02-03 清华大学 一种极低气压反应腔下的侧壁钝化侧蚀动态平衡深刻蚀光子晶体结构制备方法
US20250079127A1 (en) * 2023-08-28 2025-03-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Dielectric plasma etching using c2h2f2
US20250079183A1 (en) * 2023-08-28 2025-03-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Cryogenic plasma etching using c2h2f2

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192825A (ja) * 2009-02-20 2010-09-02 Tokyo Electron Ltd 基板処理方法
JP2018141146A (ja) * 2017-02-28 2018-09-13 セントラル硝子株式会社 ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3336975B2 (ja) 1998-03-27 2002-10-21 日本電気株式会社 基板処理方法
JP5407101B2 (ja) * 2000-09-07 2014-02-05 ダイキン工業株式会社 ドライエッチングガスおよびドライエッチング方法
JP4761502B2 (ja) 2004-10-07 2011-08-31 株式会社アルバック 層間絶縁膜のドライエッチング方法
US20070047699A1 (en) 2005-08-29 2007-03-01 Nortel Networks Limited Separation of session and session control
TWI437633B (zh) * 2006-05-24 2014-05-11 愛發科股份有限公司 Dry etching method for interlayer insulating film
JP2009123866A (ja) 2007-11-14 2009-06-04 Nec Electronics Corp 半導体装置の製造方法、および被エッチング膜の加工方法
JP6327295B2 (ja) * 2015-08-12 2018-05-23 セントラル硝子株式会社 ドライエッチング方法
JP6604833B2 (ja) 2015-12-03 2019-11-13 東京エレクトロン株式会社 プラズマエッチング方法
EP3506335A4 (en) * 2016-08-25 2020-04-08 Zeon Corporation PLASMA ETCHING PROCESS
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US20180286707A1 (en) * 2017-03-30 2018-10-04 Lam Research Corporation Gas additives for sidewall passivation during high aspect ratio cryogenic etch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010192825A (ja) * 2009-02-20 2010-09-02 Tokyo Electron Ltd 基板処理方法
JP2018141146A (ja) * 2017-02-28 2018-09-13 セントラル硝子株式会社 ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
CN113614891A (zh) 2021-11-05
TWI833930B (zh) 2024-03-01
US20220157614A1 (en) 2022-05-19
JPWO2020195559A1 (https=) 2020-10-01
TW202100805A (zh) 2021-01-01
US12154791B2 (en) 2024-11-26
JP7445150B2 (ja) 2024-03-07
SG11202109169TA (en) 2021-09-29
WO2020195559A1 (ja) 2020-10-01
KR20210136102A (ko) 2021-11-16

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