SG11202109169TA - Dry etching method and method for producing semiconductor device - Google Patents
Dry etching method and method for producing semiconductor deviceInfo
- Publication number
- SG11202109169TA SG11202109169TA SG11202109169TA SG11202109169TA SG11202109169TA SG 11202109169T A SG11202109169T A SG 11202109169TA SG 11202109169T A SG11202109169T A SG 11202109169TA SG 11202109169T A SG11202109169T A SG 11202109169TA SG 11202109169T A SG11202109169T A SG 11202109169TA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- dry etching
- producing semiconductor
- etching method
- producing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
- H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019054437 | 2019-03-22 | ||
| PCT/JP2020/008570 WO2020195559A1 (ja) | 2019-03-22 | 2020-03-02 | ドライエッチング方法及び半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202109169TA true SG11202109169TA (en) | 2021-09-29 |
Family
ID=72609015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202109169TA SG11202109169TA (en) | 2019-03-22 | 2020-03-02 | Dry etching method and method for producing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12154791B2 (https=) |
| JP (1) | JP7445150B2 (https=) |
| KR (1) | KR102765856B1 (https=) |
| CN (1) | CN113614891A (https=) |
| SG (1) | SG11202109169TA (https=) |
| TW (1) | TWI833930B (https=) |
| WO (1) | WO2020195559A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102927170B1 (ko) * | 2021-03-24 | 2026-02-11 | 삼성전자 주식회사 | 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법 |
| US12087593B2 (en) * | 2022-06-15 | 2024-09-10 | Nanya Technology Corporation | Method of plasma etching |
| CN115404552B (zh) * | 2022-11-01 | 2023-02-03 | 清华大学 | 一种极低气压反应腔下的侧壁钝化侧蚀动态平衡深刻蚀光子晶体结构制备方法 |
| US20250079127A1 (en) * | 2023-08-28 | 2025-03-06 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Dielectric plasma etching using c2h2f2 |
| US20250079183A1 (en) * | 2023-08-28 | 2025-03-06 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cryogenic plasma etching using c2h2f2 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3336975B2 (ja) | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
| JP5407101B2 (ja) * | 2000-09-07 | 2014-02-05 | ダイキン工業株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| JP4761502B2 (ja) | 2004-10-07 | 2011-08-31 | 株式会社アルバック | 層間絶縁膜のドライエッチング方法 |
| US20070047699A1 (en) | 2005-08-29 | 2007-03-01 | Nortel Networks Limited | Separation of session and session control |
| TWI437633B (zh) * | 2006-05-24 | 2014-05-11 | 愛發科股份有限公司 | Dry etching method for interlayer insulating film |
| JP2009123866A (ja) | 2007-11-14 | 2009-06-04 | Nec Electronics Corp | 半導体装置の製造方法、および被エッチング膜の加工方法 |
| JP5180121B2 (ja) * | 2009-02-20 | 2013-04-10 | 東京エレクトロン株式会社 | 基板処理方法 |
| JP6327295B2 (ja) * | 2015-08-12 | 2018-05-23 | セントラル硝子株式会社 | ドライエッチング方法 |
| JP6604833B2 (ja) | 2015-12-03 | 2019-11-13 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| EP3506335A4 (en) * | 2016-08-25 | 2020-04-08 | Zeon Corporation | PLASMA ETCHING PROCESS |
| US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| KR102303686B1 (ko) | 2017-02-28 | 2021-09-17 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법 |
| US20180286707A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Gas additives for sidewall passivation during high aspect ratio cryogenic etch |
-
2020
- 2020-03-02 CN CN202080022923.0A patent/CN113614891A/zh active Pending
- 2020-03-02 WO PCT/JP2020/008570 patent/WO2020195559A1/ja not_active Ceased
- 2020-03-02 SG SG11202109169TA patent/SG11202109169TA/en unknown
- 2020-03-02 US US17/435,980 patent/US12154791B2/en active Active
- 2020-03-02 JP JP2021508873A patent/JP7445150B2/ja active Active
- 2020-03-02 KR KR1020217032482A patent/KR102765856B1/ko active Active
- 2020-03-18 TW TW109108918A patent/TWI833930B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN113614891A (zh) | 2021-11-05 |
| TWI833930B (zh) | 2024-03-01 |
| US20220157614A1 (en) | 2022-05-19 |
| JPWO2020195559A1 (https=) | 2020-10-01 |
| TW202100805A (zh) | 2021-01-01 |
| US12154791B2 (en) | 2024-11-26 |
| JP7445150B2 (ja) | 2024-03-07 |
| WO2020195559A1 (ja) | 2020-10-01 |
| KR102765856B1 (ko) | 2025-02-11 |
| KR20210136102A (ko) | 2021-11-16 |
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