JPWO2020195559A1 - - Google Patents
Info
- Publication number
- JPWO2020195559A1 JPWO2020195559A1 JP2021508873A JP2021508873A JPWO2020195559A1 JP WO2020195559 A1 JPWO2020195559 A1 JP WO2020195559A1 JP 2021508873 A JP2021508873 A JP 2021508873A JP 2021508873 A JP2021508873 A JP 2021508873A JP WO2020195559 A1 JPWO2020195559 A1 JP WO2020195559A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
- H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019054437 | 2019-03-22 | ||
| JP2019054437 | 2019-03-22 | ||
| PCT/JP2020/008570 WO2020195559A1 (ja) | 2019-03-22 | 2020-03-02 | ドライエッチング方法及び半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020195559A1 true JPWO2020195559A1 (https=) | 2020-10-01 |
| JPWO2020195559A5 JPWO2020195559A5 (https=) | 2023-01-06 |
| JP7445150B2 JP7445150B2 (ja) | 2024-03-07 |
Family
ID=72609015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021508873A Active JP7445150B2 (ja) | 2019-03-22 | 2020-03-02 | ドライエッチング方法及び半導体デバイスの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12154791B2 (https=) |
| JP (1) | JP7445150B2 (https=) |
| KR (1) | KR102765856B1 (https=) |
| CN (1) | CN113614891A (https=) |
| SG (1) | SG11202109169TA (https=) |
| TW (1) | TWI833930B (https=) |
| WO (1) | WO2020195559A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102927170B1 (ko) * | 2021-03-24 | 2026-02-11 | 삼성전자 주식회사 | 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법 |
| US12087593B2 (en) * | 2022-06-15 | 2024-09-10 | Nanya Technology Corporation | Method of plasma etching |
| CN115404552B (zh) * | 2022-11-01 | 2023-02-03 | 清华大学 | 一种极低气压反应腔下的侧壁钝化侧蚀动态平衡深刻蚀光子晶体结构制备方法 |
| US20250079127A1 (en) * | 2023-08-28 | 2025-03-06 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Dielectric plasma etching using c2h2f2 |
| US20250079183A1 (en) * | 2023-08-28 | 2025-03-06 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cryogenic plasma etching using c2h2f2 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002021586A1 (en) * | 2000-09-07 | 2002-03-14 | Daikin Industries, Ltd. | Dry etching gas and method for dry etching |
| WO2007135906A1 (ja) * | 2006-05-24 | 2007-11-29 | Ulvac, Inc. | 層間絶縁膜のドライエッチング方法 |
| JP2010192825A (ja) * | 2009-02-20 | 2010-09-02 | Tokyo Electron Ltd | 基板処理方法 |
| JP2017050529A (ja) * | 2015-08-12 | 2017-03-09 | セントラル硝子株式会社 | ドライエッチング方法 |
| JP2017103388A (ja) * | 2015-12-03 | 2017-06-08 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| WO2018037799A1 (ja) * | 2016-08-25 | 2018-03-01 | 日本ゼオン株式会社 | プラズマエッチング方法 |
| WO2018126206A1 (en) * | 2016-12-30 | 2018-07-05 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Iodine-containing compounds for etching semiconductor structures |
| JP2018141146A (ja) * | 2017-02-28 | 2018-09-13 | セントラル硝子株式会社 | ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3336975B2 (ja) | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
| JP4761502B2 (ja) | 2004-10-07 | 2011-08-31 | 株式会社アルバック | 層間絶縁膜のドライエッチング方法 |
| US20070047699A1 (en) | 2005-08-29 | 2007-03-01 | Nortel Networks Limited | Separation of session and session control |
| JP2009123866A (ja) | 2007-11-14 | 2009-06-04 | Nec Electronics Corp | 半導体装置の製造方法、および被エッチング膜の加工方法 |
| US20180286707A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Gas additives for sidewall passivation during high aspect ratio cryogenic etch |
-
2020
- 2020-03-02 CN CN202080022923.0A patent/CN113614891A/zh active Pending
- 2020-03-02 WO PCT/JP2020/008570 patent/WO2020195559A1/ja not_active Ceased
- 2020-03-02 SG SG11202109169TA patent/SG11202109169TA/en unknown
- 2020-03-02 US US17/435,980 patent/US12154791B2/en active Active
- 2020-03-02 JP JP2021508873A patent/JP7445150B2/ja active Active
- 2020-03-02 KR KR1020217032482A patent/KR102765856B1/ko active Active
- 2020-03-18 TW TW109108918A patent/TWI833930B/zh active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002021586A1 (en) * | 2000-09-07 | 2002-03-14 | Daikin Industries, Ltd. | Dry etching gas and method for dry etching |
| WO2007135906A1 (ja) * | 2006-05-24 | 2007-11-29 | Ulvac, Inc. | 層間絶縁膜のドライエッチング方法 |
| JP2010192825A (ja) * | 2009-02-20 | 2010-09-02 | Tokyo Electron Ltd | 基板処理方法 |
| JP2017050529A (ja) * | 2015-08-12 | 2017-03-09 | セントラル硝子株式会社 | ドライエッチング方法 |
| JP2017103388A (ja) * | 2015-12-03 | 2017-06-08 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| WO2018037799A1 (ja) * | 2016-08-25 | 2018-03-01 | 日本ゼオン株式会社 | プラズマエッチング方法 |
| WO2018126206A1 (en) * | 2016-12-30 | 2018-07-05 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Iodine-containing compounds for etching semiconductor structures |
| JP2018141146A (ja) * | 2017-02-28 | 2018-09-13 | セントラル硝子株式会社 | ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113614891A (zh) | 2021-11-05 |
| TWI833930B (zh) | 2024-03-01 |
| US20220157614A1 (en) | 2022-05-19 |
| TW202100805A (zh) | 2021-01-01 |
| US12154791B2 (en) | 2024-11-26 |
| JP7445150B2 (ja) | 2024-03-07 |
| SG11202109169TA (en) | 2021-09-29 |
| WO2020195559A1 (ja) | 2020-10-01 |
| KR102765856B1 (ko) | 2025-02-11 |
| KR20210136102A (ko) | 2021-11-16 |
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