JPWO2020195559A5 - - Google Patents
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- Publication number
- JPWO2020195559A5 JPWO2020195559A5 JP2021508873A JP2021508873A JPWO2020195559A5 JP WO2020195559 A5 JPWO2020195559 A5 JP WO2020195559A5 JP 2021508873 A JP2021508873 A JP 2021508873A JP 2021508873 A JP2021508873 A JP 2021508873A JP WO2020195559 A5 JPWO2020195559 A5 JP WO2020195559A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- atoms contained
- twice
- less
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- 125000001246 bromo group Chemical group Br* 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019054437 | 2019-03-22 | ||
| JP2019054437 | 2019-03-22 | ||
| PCT/JP2020/008570 WO2020195559A1 (ja) | 2019-03-22 | 2020-03-02 | ドライエッチング方法及び半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020195559A1 JPWO2020195559A1 (https=) | 2020-10-01 |
| JPWO2020195559A5 true JPWO2020195559A5 (https=) | 2023-01-06 |
| JP7445150B2 JP7445150B2 (ja) | 2024-03-07 |
Family
ID=72609015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021508873A Active JP7445150B2 (ja) | 2019-03-22 | 2020-03-02 | ドライエッチング方法及び半導体デバイスの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12154791B2 (https=) |
| JP (1) | JP7445150B2 (https=) |
| KR (1) | KR102765856B1 (https=) |
| CN (1) | CN113614891A (https=) |
| SG (1) | SG11202109169TA (https=) |
| TW (1) | TWI833930B (https=) |
| WO (1) | WO2020195559A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102927170B1 (ko) * | 2021-03-24 | 2026-02-11 | 삼성전자 주식회사 | 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법 |
| US12087593B2 (en) * | 2022-06-15 | 2024-09-10 | Nanya Technology Corporation | Method of plasma etching |
| CN115404552B (zh) * | 2022-11-01 | 2023-02-03 | 清华大学 | 一种极低气压反应腔下的侧壁钝化侧蚀动态平衡深刻蚀光子晶体结构制备方法 |
| US20250079127A1 (en) * | 2023-08-28 | 2025-03-06 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Dielectric plasma etching using c2h2f2 |
| US20250079183A1 (en) * | 2023-08-28 | 2025-03-06 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cryogenic plasma etching using c2h2f2 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3336975B2 (ja) | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
| JP5407101B2 (ja) * | 2000-09-07 | 2014-02-05 | ダイキン工業株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| JP4761502B2 (ja) | 2004-10-07 | 2011-08-31 | 株式会社アルバック | 層間絶縁膜のドライエッチング方法 |
| US20070047699A1 (en) | 2005-08-29 | 2007-03-01 | Nortel Networks Limited | Separation of session and session control |
| TWI437633B (zh) * | 2006-05-24 | 2014-05-11 | 愛發科股份有限公司 | Dry etching method for interlayer insulating film |
| JP2009123866A (ja) | 2007-11-14 | 2009-06-04 | Nec Electronics Corp | 半導体装置の製造方法、および被エッチング膜の加工方法 |
| JP5180121B2 (ja) * | 2009-02-20 | 2013-04-10 | 東京エレクトロン株式会社 | 基板処理方法 |
| JP6327295B2 (ja) * | 2015-08-12 | 2018-05-23 | セントラル硝子株式会社 | ドライエッチング方法 |
| JP6604833B2 (ja) | 2015-12-03 | 2019-11-13 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| EP3506335A4 (en) * | 2016-08-25 | 2020-04-08 | Zeon Corporation | PLASMA ETCHING PROCESS |
| US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| KR102303686B1 (ko) | 2017-02-28 | 2021-09-17 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법 |
| US20180286707A1 (en) * | 2017-03-30 | 2018-10-04 | Lam Research Corporation | Gas additives for sidewall passivation during high aspect ratio cryogenic etch |
-
2020
- 2020-03-02 CN CN202080022923.0A patent/CN113614891A/zh active Pending
- 2020-03-02 WO PCT/JP2020/008570 patent/WO2020195559A1/ja not_active Ceased
- 2020-03-02 SG SG11202109169TA patent/SG11202109169TA/en unknown
- 2020-03-02 US US17/435,980 patent/US12154791B2/en active Active
- 2020-03-02 JP JP2021508873A patent/JP7445150B2/ja active Active
- 2020-03-02 KR KR1020217032482A patent/KR102765856B1/ko active Active
- 2020-03-18 TW TW109108918A patent/TWI833930B/zh active
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