JP7445150B2 - ドライエッチング方法及び半導体デバイスの製造方法 - Google Patents

ドライエッチング方法及び半導体デバイスの製造方法 Download PDF

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JP7445150B2
JP7445150B2 JP2021508873A JP2021508873A JP7445150B2 JP 7445150 B2 JP7445150 B2 JP 7445150B2 JP 2021508873 A JP2021508873 A JP 2021508873A JP 2021508873 A JP2021508873 A JP 2021508873A JP 7445150 B2 JP7445150 B2 JP 7445150B2
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Prior art keywords
dry etching
gas
etching method
etching
substrate
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Japanese (ja)
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JPWO2020195559A1 (https=
JPWO2020195559A5 (https=
Inventor
啓之 大森
俊太 古谷
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Central Glass Co Ltd
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Central Glass Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/10—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a boron compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2021508873A 2019-03-22 2020-03-02 ドライエッチング方法及び半導体デバイスの製造方法 Active JP7445150B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019054437 2019-03-22
JP2019054437 2019-03-22
PCT/JP2020/008570 WO2020195559A1 (ja) 2019-03-22 2020-03-02 ドライエッチング方法及び半導体デバイスの製造方法

Publications (3)

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JPWO2020195559A1 JPWO2020195559A1 (https=) 2020-10-01
JPWO2020195559A5 JPWO2020195559A5 (https=) 2023-01-06
JP7445150B2 true JP7445150B2 (ja) 2024-03-07

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US (1) US12154791B2 (https=)
JP (1) JP7445150B2 (https=)
KR (1) KR102765856B1 (https=)
CN (1) CN113614891A (https=)
SG (1) SG11202109169TA (https=)
TW (1) TWI833930B (https=)
WO (1) WO2020195559A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102927170B1 (ko) * 2021-03-24 2026-02-11 삼성전자 주식회사 식각 가스 조성물, 이를 이용한 미세 패턴 형성 방법 및 수직형 반도체 장치의 제조 방법
US12087593B2 (en) * 2022-06-15 2024-09-10 Nanya Technology Corporation Method of plasma etching
CN115404552B (zh) * 2022-11-01 2023-02-03 清华大学 一种极低气压反应腔下的侧壁钝化侧蚀动态平衡深刻蚀光子晶体结构制备方法
US20250079127A1 (en) * 2023-08-28 2025-03-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Dielectric plasma etching using c2h2f2
US20250079183A1 (en) * 2023-08-28 2025-03-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Cryogenic plasma etching using c2h2f2

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002021586A1 (en) 2000-09-07 2002-03-14 Daikin Industries, Ltd. Dry etching gas and method for dry etching
WO2007135906A1 (ja) 2006-05-24 2007-11-29 Ulvac, Inc. 層間絶縁膜のドライエッチング方法
JP2010192825A (ja) 2009-02-20 2010-09-02 Tokyo Electron Ltd 基板処理方法
JP2017050529A (ja) 2015-08-12 2017-03-09 セントラル硝子株式会社 ドライエッチング方法
JP2017103388A (ja) 2015-12-03 2017-06-08 東京エレクトロン株式会社 プラズマエッチング方法
WO2018037799A1 (ja) 2016-08-25 2018-03-01 日本ゼオン株式会社 プラズマエッチング方法
WO2018126206A1 (en) 2016-12-30 2018-07-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Iodine-containing compounds for etching semiconductor structures
JP2018141146A (ja) 2017-02-28 2018-09-13 セントラル硝子株式会社 ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3336975B2 (ja) 1998-03-27 2002-10-21 日本電気株式会社 基板処理方法
JP4761502B2 (ja) 2004-10-07 2011-08-31 株式会社アルバック 層間絶縁膜のドライエッチング方法
US20070047699A1 (en) 2005-08-29 2007-03-01 Nortel Networks Limited Separation of session and session control
JP2009123866A (ja) 2007-11-14 2009-06-04 Nec Electronics Corp 半導体装置の製造方法、および被エッチング膜の加工方法
US20180286707A1 (en) * 2017-03-30 2018-10-04 Lam Research Corporation Gas additives for sidewall passivation during high aspect ratio cryogenic etch

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002021586A1 (en) 2000-09-07 2002-03-14 Daikin Industries, Ltd. Dry etching gas and method for dry etching
WO2007135906A1 (ja) 2006-05-24 2007-11-29 Ulvac, Inc. 層間絶縁膜のドライエッチング方法
JP2010192825A (ja) 2009-02-20 2010-09-02 Tokyo Electron Ltd 基板処理方法
JP2017050529A (ja) 2015-08-12 2017-03-09 セントラル硝子株式会社 ドライエッチング方法
JP2017103388A (ja) 2015-12-03 2017-06-08 東京エレクトロン株式会社 プラズマエッチング方法
WO2018037799A1 (ja) 2016-08-25 2018-03-01 日本ゼオン株式会社 プラズマエッチング方法
WO2018126206A1 (en) 2016-12-30 2018-07-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Iodine-containing compounds for etching semiconductor structures
JP2018141146A (ja) 2017-02-28 2018-09-13 セントラル硝子株式会社 ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法

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Publication number Publication date
CN113614891A (zh) 2021-11-05
TWI833930B (zh) 2024-03-01
US20220157614A1 (en) 2022-05-19
JPWO2020195559A1 (https=) 2020-10-01
TW202100805A (zh) 2021-01-01
US12154791B2 (en) 2024-11-26
SG11202109169TA (en) 2021-09-29
WO2020195559A1 (ja) 2020-10-01
KR102765856B1 (ko) 2025-02-11
KR20210136102A (ko) 2021-11-16

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