TWI805936B - 曝光裝置及物品之製造方法 - Google Patents

曝光裝置及物品之製造方法 Download PDF

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Publication number
TWI805936B
TWI805936B TW109125491A TW109125491A TWI805936B TW I805936 B TWI805936 B TW I805936B TW 109125491 A TW109125491 A TW 109125491A TW 109125491 A TW109125491 A TW 109125491A TW I805936 B TWI805936 B TW I805936B
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TW
Taiwan
Prior art keywords
light
shielding member
light shielding
scanning direction
aforementioned
Prior art date
Application number
TW109125491A
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English (en)
Chinese (zh)
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TW202111441A (zh
Inventor
小林大輔
Original Assignee
日商佳能股份有限公司
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Publication of TW202111441A publication Critical patent/TW202111441A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Developing Agents For Electrophotography (AREA)
TW109125491A 2019-09-03 2020-07-29 曝光裝置及物品之製造方法 TWI805936B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019160664A JP7446069B2 (ja) 2019-09-03 2019-09-03 露光装置及び物品の製造方法
JP2019-160664 2019-09-03

Publications (2)

Publication Number Publication Date
TW202111441A TW202111441A (zh) 2021-03-16
TWI805936B true TWI805936B (zh) 2023-06-21

Family

ID=74849206

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109125491A TWI805936B (zh) 2019-09-03 2020-07-29 曝光裝置及物品之製造方法

Country Status (7)

Country Link
US (1) US11762298B2 (https=)
EP (1) EP4027199A4 (https=)
JP (1) JP7446069B2 (https=)
KR (1) KR102746191B1 (https=)
CN (1) CN114365045B (https=)
TW (1) TWI805936B (https=)
WO (1) WO2021044755A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7680878B2 (ja) 2021-05-07 2025-05-21 キヤノン株式会社 照明光学系、露光装置、および物品の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
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JP2002110529A (ja) * 2000-10-03 2002-04-12 Nikon Corp 投影露光装置及び該装置を用いたマイクロデバイス製造方法
JP2006253186A (ja) * 2005-03-08 2006-09-21 Nikon Corp 可変スリット装置、照明装置、露光装置、及びデバイスの製造方法
WO2011010560A1 (ja) * 2009-07-24 2011-01-27 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP2014116406A (ja) * 2012-12-07 2014-06-26 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
TW201909241A (zh) * 2017-07-25 2019-03-01 日商凸版印刷股份有限公司 曝光裝置及曝光方法

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US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
JP2002033272A (ja) * 2000-05-11 2002-01-31 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2005109304A (ja) 2003-10-01 2005-04-21 Canon Inc 照明光学系及び露光装置
JP4458329B2 (ja) * 2003-12-26 2010-04-28 キヤノン株式会社 露光装置及びデバイス製造方法
JP5159027B2 (ja) * 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
JP2008153401A (ja) * 2006-12-15 2008-07-03 Canon Inc 露光装置及びデバイス製造方法
JP2009043933A (ja) * 2007-08-08 2009-02-26 Canon Inc 露光装置、調整方法、露光方法及びデバイス製造方法
JP2009059893A (ja) * 2007-08-31 2009-03-19 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2010073835A (ja) * 2008-09-17 2010-04-02 Canon Inc 露光装置及びデバイス製造方法
JP5127875B2 (ja) * 2010-04-28 2013-01-23 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
DE102013209093A1 (de) * 2013-05-16 2014-11-20 Carl Zeiss Smt Gmbh Verfahren zum Herstellen einer Maske für ein lithographisches Beleuchtungssystem
JP2017053888A (ja) * 2015-09-07 2017-03-16 キヤノン株式会社 露光方法および露光装置、ならびに物品の製造方法
JP2018010105A (ja) * 2016-07-13 2018-01-18 キヤノン株式会社 露光装置、露光方法、および物品製造方法
JP6991462B2 (ja) 2018-03-15 2022-01-12 オムロン株式会社 小型光電センサ
US11165978B2 (en) 2019-04-16 2021-11-02 Canon Kabushiki Kaisha Imaging device, control method thereof, and imaging apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110529A (ja) * 2000-10-03 2002-04-12 Nikon Corp 投影露光装置及び該装置を用いたマイクロデバイス製造方法
JP2006253186A (ja) * 2005-03-08 2006-09-21 Nikon Corp 可変スリット装置、照明装置、露光装置、及びデバイスの製造方法
WO2011010560A1 (ja) * 2009-07-24 2011-01-27 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP2014116406A (ja) * 2012-12-07 2014-06-26 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
TW201909241A (zh) * 2017-07-25 2019-03-01 日商凸版印刷股份有限公司 曝光裝置及曝光方法

Also Published As

Publication number Publication date
JP7446069B2 (ja) 2024-03-08
WO2021044755A1 (ja) 2021-03-11
TW202111441A (zh) 2021-03-16
CN114365045B (zh) 2024-04-26
CN114365045A (zh) 2022-04-15
EP4027199A1 (en) 2022-07-13
KR102746191B1 (ko) 2024-12-24
US20220171291A1 (en) 2022-06-02
KR20220042453A (ko) 2022-04-05
JP2021039244A (ja) 2021-03-11
US11762298B2 (en) 2023-09-19
EP4027199A4 (en) 2023-09-06

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